Semiconductor surfaces and interfaces: their atom. and electron. structures
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin
Akad.-Verl.
1988
|
| Schriftenreihe: | Physical research
5 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XXV, 441 S. Ill., graph. Darst. |
| ISBN: | 3055004795 |
Internformat
MARC
| LEADER | 00000nam a22000002cb4500 | ||
|---|---|---|---|
| 001 | BV025873190 | ||
| 003 | DE-604 | ||
| 007 | t | ||
| 008 | 100417s1988 ad|| |||| 00||| eng d | ||
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| 016 | 7 | |a 880661879 |2 DE-101 | |
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| 041 | 0 | |a eng | |
| 049 | |a DE-11 | ||
| 084 | |a UP 2800 |0 (DE-625)146366: |2 rvk | ||
| 084 | |a UP 7500 |0 (DE-625)146433: |2 rvk | ||
| 100 | 1 | |a Bechstedt, Friedhelm |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Semiconductor surfaces and interfaces |b their atom. and electron. structures |c by Friedhelm Bechstedt ; Rolf Enderlein |
| 264 | 1 | |a Berlin |b Akad.-Verl. |c 1988 | |
| 300 | |a XXV, 441 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Physical research |v 5 | |
| 500 | |a Literaturangaben | ||
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| 689 | 1 | 0 | |a Halbleitergrenzfläche |0 (DE-588)4158802-2 |D s |
| 689 | 1 | |5 DE-604 | |
| 700 | 1 | |a Enderlein, Rolf |e Verfasser |4 aut | |
| 830 | 0 | |a Physical research |v 5 |w (DE-604)BV000651253 |9 5 | |
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| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-019120398 | |
Datensatz im Suchindex
| _version_ | 1810361713506123776 |
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| adam_text |
CONTENTS
INTRODUCTION
CHAPTER 1
FUNDAMENTALS 1
1.1. ATOMIC STRUCTURE OF THREE-DIMENSIONAL CRYSTALS 1
1.1.1. LATTICES, POINT AND SPACE GROUP SYMMETRIES 1
1.1.2. LATTICE PLANES 5
1.2. IDEAL CRYSTAL SURFACES 9
1.2.1. TRANSLATIONAL SYMMETRY AND THE LATTICE OF IDEAL
CRYSTAL SURFACES
1.2.2. POINT AND SPACE SYMMETRY OF IDEAL CRYSTAL SURFACES 15
1.2.3. PROJECTION OF A THREE-DIMENSIONAL CRYSTAL
ONTO ITS SURFACE 23
1.3. RELAXED AND RECONSTRUCTED SURFACES 31
1.3.1. SURFACE INDUCED ATOMIC DISPLACEMENTS 31
1.3.2.1. TRANSLATIONAL SYMMETRY 34
1.3.2.2. POINT AND SPACE SYMMETRIES 39
1.4. SURFACE STRUCTURE AND CHEMICAL BONDING 41
1.4.1, - BULK CRYSTALS 43
1.4.1.1, DIFFERENT TYPES OF BONDING 43
1.4.1.2, RELATION TO CRYSTAL STRUCTURE 44
1.4.2, BONDING AT SURFACES 47
1.4.2.1. GENERAL ASPECTS 47
1.4.2.2. COVALENT BONDING 49
1.4.2.3. IONIC BONDING 54
1.5. EXPERIMENTAL TECHNIQUES FOR THE PREPARATION
OF SURFACES AND THE INVESTIGATION OF THEIR
ATOMIC STRUCTURE 55
1.5.1. PREPARATION OF SURFACES 55
1.5.2. EXPERIMENTAL TECHNIQUES FOR DETERMINING
SURFACE STRUCTURE 60
1.5.2.1. LOW ENERGY ELECTRON DIFFRACTION (LEED) 62
1.5.2.2. OTHER METHODS 66
REFERENCES TO CHAPTER 1 69
VII
BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/880661879
CHAPTER 2
THEORETICAL METHODS 72
2.1. ONE-ELECTRON SCHRODINGER EQUATION AND ITS
PROPERTIES IN THE CASE OF CRYSTAL SURFACES 72
2.1.1. ONE-ELECTRON APPROXIMATION 72
2.1.2. TRANSLATIONAL SYMMETRY 75
2.1.3. POINT AND SPACE GROUP SYMMETRIES 80
2.1.4. PROJECTION OF THE BULK ENERGY BANDS INTO THE FIRST
SURFACE BZ 86
2.2. THE ONE-DIMENSIONAL MODEL OF A CRYSTAL SURFACE,
TAMM AND SHOCKLEY STA\. .S 91
2.2.1. INFINITE ONE-DIMENSIONAL CRYSTAL 93
2.2.1.1. NEARLY-FREE-ELECTRON APPROXIMATION 93
2.2.1.2. COMPLEX BANDSTRUCTURE 95
2.2.2. SEMI-INFINITE ONE-DIMENSIONAL CRYSTAL.
MATCHING 96
2.3. SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS
OF ONE-ELECTRON STATES 99
2.3.1. PSEUDOPOTENTIAL CONCEPT 99
2.3.2. PLANE WAVE EXPANSION 103
2.3.3. APPLICATION TO SURFACES: MATCHING AND PERIODIC
SLAB METHOD 106
2.3.4. EXAMPLE: SI(M) SURFACE 108
2.4. TIGHT-BINDING THEORY OF SURFACE STATES 113
2.4.1. FOUNDATIONS OF THE METHOD 113
2.4.2, BULK ETBM HAMILTONIAN 116
2.4.2.1. BASIC ASSUMPTIONS 116
2.4.2.2. SLATER-KOSTER ANSATZ 119
2.4.2.3. HIRABAYASHI NOTATION 123
2.4.2.4. WEAIRE-THORPE AND BOND-ORBITAL MODEL 126
2.4.3. LAYER-ORBITAL REPRESENTATION 131
2.4.4. TECHNIQUES FOR DEALING WITH THE SURFACE GEOMETRY PROBLEM 133
2.4.4.1. SLAB METHOD 133
2.4.4.2. CLUSTER METHOD 134
2.4.4.3. TRANSFER-MATRIX METHOD 135
2.4.4.4. SCATTERING-THEORETIC METHOD 136
2.4.5. SCATTERING-THEORETIC FORMALISM FOR SURFACES 137
2.4.5.1. GENERAL RESULTS 137
2.4.5.2. BULK GREEN'S FUNCTION 140
2.4.5.3. PERTURBATION POTENTIAL FOR IDEAL SURFACES 141
2.4.6. APPLICATIONS 144
2.4,6.1, (111) AND (
1
00) IDEAL SURFACES OF
DIAMOND-TYPE CRYSTALS 144
VIII
2.4.6.2. CHEMISORPTION ON A DIAMOND-TYPE (111) SURFACE 148
2.4.6.3, IDEAL GE-GAAS(LH) INTERFACE 151
2.4,7. BEYOND ETBM, INCLUSION OF SELF-CONSISTENCY BY MEANS
OF CHARGE-DEPENDENT TIGHT-BINDING TREATMENT 156
2.5. TOTAL-ENERGY CALCULATIONS 159
2.5.1, SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS
IN THE FRAMEWORK OF THE LOCAL DENSITY APPROXIMATION 160
2.5.2. TIGHT-BINDING METHODS 164
2.5.2.1. CHARGE-SELF-CONSISTENT TIGHT-BINDING METHOD 165
2.5.2.2. FORCE-CONSTANT MODEL OF CHADI 175
REFERENCES TO CHAPTER 2 178
CHAPTER 3
SURFACES 187
3.1. SILICON 191
3.1.1. SILICON (111) SURFACES 193
3.1.1.1. 1X1 CELLS 194
3.1.1.2. 2X1 CELLS: BUCKLING, CHAINS, OR MOLECULES? 198
3.1.1.3. 7X7 CELLS 212
3.1.2. SILICON (100) SURFACES 224
3.1.2.1. 2X1 RECONSTRUCTION: SYMMETRIC AND ASYMMETRIC DIMERS
OR OTHER STRUCTURE ELEMENTS? 225
3.1.2.2. ATOMIC STRUCTURE STUDIES 227
3.1.2.3. ELECTRONIC STRUCTURE 229
3.1.3. OTHER SILICON SURFACES 233
3.2. GERMANIUM 236
3.2.1. (111) FACES 237
3.2.1.1. PHASES 237
3.2.1.2. ATOMIC STRUCTURE 238
3.2.1.3. ELECTRONIC STATES 241
3.2.2. (100) AND OTHER FACES 244
3.3. DIAMOND 246
3.3.1. GEOMETRY 246
3.3.2. ELECTRONIC STATES 248
3.4. GALLIUM ARSENIDE 250
3.4.1. (110) SURFACES 251
3.4.1.1. RELAXATION 251
3.4.1.2. SURFACE STATES 255
3.4.2. POLAR SURFACES. PROTOTYPES OF RECONSTRUCTION 257
3.4.2.1. VARIETY OF RECONSTRUCTIONS 258
IX
3*4*2.2. SIMILARITIES IN ELECTRONIC STRUCTURES? 262
3.4.3. BEYOND LOW INDICES 267
3.5. OTHER ZINCBLENDE SEMICONDUCTORS. CHEMICAL TRENDS 269
3.5.1. (110) CLEAVAGE FACES 269
3.5.1.1. ATOMIC STRUCTURE PARAMETERS 269
3.5.1.2. GAP STATES? 273
3.5.1.3. IONIZATION ENERGIES 276
3.5.2. OTHER FACES 280
3.6. WURTZITE MATERIALS. PROTOTYPE! ZNO 282
3.6.1. NONPOLAR (ICFLO) AND (LI2O) SURFACES 283
3.6.2. POLAR (0001) AND (000T) SURFACES 286
REFERENCES TO CHAPTER 3 239
CHAPTER 4
INTERFACES 311
4.1. METAL-SEMICONDUCTOR INTERFACES 311
4.1.1. HISTORICAL PRELIMINARIES 311
4.1.2. PHENOMENOLOGICAL MODELS 314
4.1.2.1. IDEAL SCHOTTKY BARRIER 314
4.1.2.2. REAL-STRUCTURE EFFECTS. ROLE OF SURFACE STATES 315
4.1.2.3. VALIDITY OF SIMPLE MODELS. CHEMICAL TRENDS 318
4.1.3. MICROSCOPIC CONCEPTS 324
4.1.3.1. UNIFIED DEFECT MODEL 324
4.1.3.2. "CANONICAL" SCHOTTKY BARRIER HEIGHTS. THE ROLE OF METAL
-INDUCED GAP STATES 334
4.1.3.3. UNIFIED DISORDER-INDUCED GAP STATE MODEL 339
4.1.4. INTERFACE CHEMISTRY AND PHYSICAL PROPERTIES 342
4.1.4.1. ELEMENTAL SEMICONDUCTORS. SILICON 342
4.1.4.2. III-VCOMPOUND SEMICONDUCTORS: GAAS AND INP 355
4.2. SEMICONDUCTOR-SEMICONDUCTOR INTERFACES 364
4.2.1. SHOCKLEY-ANDERSON MODEL 364
4.2.1.1. BAND ALIGNMENT AND ELECTRON AFFINITY RULE 364
4.2.1.2. LIMITATIONS 353
4.2.2. BAND DISCONTINUITIES 371
4.2.2.1. ESTIMATES IN FRAMEWORK OF THE ELECTRON AFFINITY RULE 372
4.2.2.2. INTERFACE DIPOLES 377
4.2.2.3. RELATION TO FERMI-LOVEL PINNING 381
4.2.2.4. ATOMIC REFERENCE LEVELS 383
4.2.2.5. INFLUENCE OF LATTICE MISFIT. BAND OFFSETS FOR
SI-SI- GE TOC.
1 -X X 386
X
4.2.3. A PROTOTYPE HETEROJUNCTION INTERFACE:
GAAS-GA1 100) 391
4.2.3.1. SCOPE 3G^
4.2.3.2. INTERFACE ATOMIC ARRANGEMENT 3G3
4.2.3.3. ELECTRONIC ENERGY SPECTRUM 3GG
4.3. INSULATOR-SEMICONDUCTOR INTERFACE:
INITIAL STAGES OF OXIDE FORMATION 3GG
4.3.1. OXYGEN ONTO SI(111) AND (100) SURFACES 400
4.3.1.1. CHEMISORPTION 40Q
4.3.1.2. INTERFACE REGION BETWEEN SI AND SIO^ 404
4.3.2. OXYGEN ONTO GAAS SURFACES 408
4.3.2.1. NONPOLAR (110) CLEAVAGE FACE 408
4.3.2.2. POLAR FACES 4^2
REFERENCES TO CHAPTER 4 4^3
GLOSSARY OF ACRONYMS 434
PRINCIPAL SVMBOLS 435
INDEX 437
XI |
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| illustrated | Illustrated |
| indexdate | 2024-09-16T14:04:29Z |
| institution | BVB |
| isbn | 3055004795 |
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| physical | XXV, 441 S. Ill., graph. Darst. |
| publishDate | 1988 |
| publishDateSearch | 1988 |
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| publisher | Akad.-Verl. |
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| series | Physical research |
| series2 | Physical research |
| spelling | Bechstedt, Friedhelm Verfasser aut Semiconductor surfaces and interfaces their atom. and electron. structures by Friedhelm Bechstedt ; Rolf Enderlein Berlin Akad.-Verl. 1988 XXV, 441 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physical research 5 Literaturangaben Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf Halbleitergrenzfläche (DE-588)4158802-2 gnd rswk-swf Halbleiteroberfläche (DE-588)4137418-6 s DE-604 Halbleitergrenzfläche (DE-588)4158802-2 s Enderlein, Rolf Verfasser aut Physical research 5 (DE-604)BV000651253 5 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=019120398&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Bechstedt, Friedhelm Enderlein, Rolf Semiconductor surfaces and interfaces their atom. and electron. structures Physical research Halbleiteroberfläche (DE-588)4137418-6 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd |
| subject_GND | (DE-588)4137418-6 (DE-588)4158802-2 |
| title | Semiconductor surfaces and interfaces their atom. and electron. structures |
| title_auth | Semiconductor surfaces and interfaces their atom. and electron. structures |
| title_exact_search | Semiconductor surfaces and interfaces their atom. and electron. structures |
| title_full | Semiconductor surfaces and interfaces their atom. and electron. structures by Friedhelm Bechstedt ; Rolf Enderlein |
| title_fullStr | Semiconductor surfaces and interfaces their atom. and electron. structures by Friedhelm Bechstedt ; Rolf Enderlein |
| title_full_unstemmed | Semiconductor surfaces and interfaces their atom. and electron. structures by Friedhelm Bechstedt ; Rolf Enderlein |
| title_short | Semiconductor surfaces and interfaces |
| title_sort | semiconductor surfaces and interfaces their atom and electron structures |
| title_sub | their atom. and electron. structures |
| topic | Halbleiteroberfläche (DE-588)4137418-6 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd |
| topic_facet | Halbleiteroberfläche Halbleitergrenzfläche |
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