Physics of semiconductor devices:
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
New York [u.a.]
Wiley
1981
|
Ausgabe: | 2. ed. |
Schlagworte: | |
Beschreibung: | XII, 868 S. graph. Darst. |
ISBN: | 0471056618 |
Internformat
MARC
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100 | 1 | |a Sze, Simon M. |e Verfasser |4 aut | |
245 | 1 | 0 | |a Physics of semiconductor devices |c S. M. Sze |
250 | |a 2. ed. | ||
264 | 1 | |a New York [u.a.] |b Wiley |c 1981 | |
300 | |a XII, 868 S. |b graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
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Datensatz im Suchindex
_version_ | 1804141325412466688 |
---|---|
any_adam_object | |
author | Sze, Simon M. |
author_facet | Sze, Simon M. |
author_role | aut |
author_sort | Sze, Simon M. |
author_variant | s m s sm sms |
building | Verbundindex |
bvnumber | BV025871004 |
classification_rvk | UP 2800 UX 2150 ZN 4800 |
ctrlnum | (OCoLC)251894832 (DE-599)BVBBV025871004 |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
edition | 2. ed. |
format | Book |
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id | DE-604.BV025871004 |
illustrated | Illustrated |
indexdate | 2024-07-09T22:14:05Z |
institution | BVB |
isbn | 0471056618 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-019118337 |
oclc_num | 251894832 |
open_access_boolean | |
owner | DE-11 |
owner_facet | DE-11 |
physical | XII, 868 S. graph. Darst. |
publishDate | 1981 |
publishDateSearch | 1981 |
publishDateSort | 1981 |
publisher | Wiley |
record_format | marc |
spelling | Sze, Simon M. Verfasser aut Physics of semiconductor devices S. M. Sze 2. ed. New York [u.a.] Wiley 1981 XII, 868 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterschaltung (DE-588)4158811-3 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Halbleiterschaltung (DE-588)4158811-3 s Halbleiterbauelement (DE-588)4113826-0 s Halbleiterphysik (DE-588)4113829-6 s 1\p DE-604 Physikalische Eigenschaft (DE-588)4134738-9 s 2\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Sze, Simon M. Physics of semiconductor devices Physikalische Eigenschaft (DE-588)4134738-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterschaltung (DE-588)4158811-3 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
subject_GND | (DE-588)4134738-9 (DE-588)4113826-0 (DE-588)4158811-3 (DE-588)4113829-6 |
title | Physics of semiconductor devices |
title_auth | Physics of semiconductor devices |
title_exact_search | Physics of semiconductor devices |
title_full | Physics of semiconductor devices S. M. Sze |
title_fullStr | Physics of semiconductor devices S. M. Sze |
title_full_unstemmed | Physics of semiconductor devices S. M. Sze |
title_short | Physics of semiconductor devices |
title_sort | physics of semiconductor devices |
topic | Physikalische Eigenschaft (DE-588)4134738-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterschaltung (DE-588)4158811-3 gnd Halbleiterphysik (DE-588)4113829-6 gnd |
topic_facet | Physikalische Eigenschaft Halbleiterbauelement Halbleiterschaltung Halbleiterphysik |
work_keys_str_mv | AT szesimonm physicsofsemiconductordevices |