Amorphous silicon and related materials: B
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Singapore u.a.
World Scientific
1989
|
| Schriftenreihe: | Advances in disordered semiconductors
1 |
| Schlagworte: | |
| Beschreibung: | IX, S. 722-1123 |
| ISBN: | 9971506157 997150619X |
Internformat
MARC
| LEADER | 00000nam a2200000 cc4500 | ||
|---|---|---|---|
| 001 | BV025832534 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 100417s1989 |||| 00||| eng d | ||
| 020 | |a 9971506157 |9 9971-50-615-7 | ||
| 020 | |a 997150619X |9 9971-50-619-X | ||
| 035 | |a (OCoLC)830746939 | ||
| 035 | |a (DE-599)BVBBV025832534 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-11 | ||
| 084 | |a UP 2800 |0 (DE-625)146366: |2 rvk | ||
| 084 | |a UP 3160 |0 (DE-625)146378: |2 rvk | ||
| 245 | 1 | 0 | |a Amorphous silicon and related materials |n B |c ed.: Hellmut Fritzsche |
| 264 | 1 | |a Singapore u.a. |b World Scientific |c 1989 | |
| 300 | |a IX, S. 722-1123 | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Advances in disordered semiconductors |v 1 | |
| 490 | 0 | |a Advances in disordered semiconductors |v ... | |
| 650 | 0 | 7 | |a Amorpher Zustand |0 (DE-588)4306087-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4143413-4 |a Aufsatzsammlung |2 gnd-content | |
| 689 | 0 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 1 | |a Amorpher Zustand |0 (DE-588)4306087-0 |D s |
| 689 | 0 | 2 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Fritzsche, Hellmut |e Sonstige |4 oth | |
| 773 | 0 | 8 | |w (DE-604)BV002424097 |g B |
| 830 | 0 | |a Advances in disordered semiconductors |v 1 |w (DE-604)BV002419279 |9 1 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-019430811 | ||
Datensatz im Suchindex
| _version_ | 1804141725197795328 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV025832534 |
| classification_rvk | UP 2800 UP 3160 |
| ctrlnum | (OCoLC)830746939 (DE-599)BVBBV025832534 |
| discipline | Physik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01515nam a2200433 cc4500</leader><controlfield tag="001">BV025832534</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">100417s1989 |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9971506157</subfield><subfield code="9">9971-50-615-7</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">997150619X</subfield><subfield code="9">9971-50-619-X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)830746939</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV025832534</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-11</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 2800</subfield><subfield code="0">(DE-625)146366:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3160</subfield><subfield code="0">(DE-625)146378:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Amorphous silicon and related materials</subfield><subfield code="n">B</subfield><subfield code="c">ed.: Hellmut Fritzsche</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Singapore u.a.</subfield><subfield code="b">World Scientific</subfield><subfield code="c">1989</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">IX, S. 722-1123</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Advances in disordered semiconductors</subfield><subfield code="v">1</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Advances in disordered semiconductors</subfield><subfield code="v">...</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Amorpher Zustand</subfield><subfield code="0">(DE-588)4306087-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4143413-4</subfield><subfield code="a">Aufsatzsammlung</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Amorpher Zustand</subfield><subfield code="0">(DE-588)4306087-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fritzsche, Hellmut</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="w">(DE-604)BV002424097</subfield><subfield code="g">B</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Advances in disordered semiconductors</subfield><subfield code="v">1</subfield><subfield code="w">(DE-604)BV002419279</subfield><subfield code="9">1</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-019430811</subfield></datafield></record></collection> |
| genre | (DE-588)4143413-4 Aufsatzsammlung gnd-content |
| genre_facet | Aufsatzsammlung |
| id | DE-604.BV025832534 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T22:20:26Z |
| institution | BVB |
| isbn | 9971506157 997150619X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-019430811 |
| oclc_num | 830746939 |
| open_access_boolean | |
| owner | DE-11 |
| owner_facet | DE-11 |
| physical | IX, S. 722-1123 |
| publishDate | 1989 |
| publishDateSearch | 1989 |
| publishDateSort | 1989 |
| publisher | World Scientific |
| record_format | marc |
| series | Advances in disordered semiconductors |
| series2 | Advances in disordered semiconductors |
| spelling | Amorphous silicon and related materials B ed.: Hellmut Fritzsche Singapore u.a. World Scientific 1989 IX, S. 722-1123 txt rdacontent n rdamedia nc rdacarrier Advances in disordered semiconductors 1 Advances in disordered semiconductors ... Amorpher Zustand (DE-588)4306087-0 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content Silicium (DE-588)4077445-4 s Amorpher Zustand (DE-588)4306087-0 s Halbleiter (DE-588)4022993-2 s DE-604 Fritzsche, Hellmut Sonstige oth (DE-604)BV002424097 B Advances in disordered semiconductors 1 (DE-604)BV002419279 1 |
| spellingShingle | Amorphous silicon and related materials Advances in disordered semiconductors Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4306087-0 (DE-588)4077445-4 (DE-588)4022993-2 (DE-588)4143413-4 |
| title | Amorphous silicon and related materials |
| title_auth | Amorphous silicon and related materials |
| title_exact_search | Amorphous silicon and related materials |
| title_full | Amorphous silicon and related materials B ed.: Hellmut Fritzsche |
| title_fullStr | Amorphous silicon and related materials B ed.: Hellmut Fritzsche |
| title_full_unstemmed | Amorphous silicon and related materials B ed.: Hellmut Fritzsche |
| title_short | Amorphous silicon and related materials |
| title_sort | amorphous silicon and related materials |
| topic | Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Amorpher Zustand Silicium Halbleiter Aufsatzsammlung |
| volume_link | (DE-604)BV002424097 (DE-604)BV002419279 |
| work_keys_str_mv | AT fritzschehellmut amorphoussiliconandrelatedmaterialsb |