The MOCVD challenge: a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | German |
| Published: |
CRC Press
Boca Raton [u.a.]
2011
|
| Edition: | 2. ed. |
| Series: | Electronic materials and devices series
|
| Subjects: | |
| Physical Description: | XX, 779 S. graph. Darst. |
| ISBN: | 9781439806982 |
Staff View
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Record in the Search Index
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| author_facet | Razeghi, Manijeh |
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| id | DE-604.BV025603042 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:37:19Z |
| institution | BVB |
| isbn | 9781439806982 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-020198287 |
| oclc_num | 917745096 |
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| physical | XX, 779 S. graph. Darst. |
| publishDate | 2011 |
| publishDateSearch | 2011 |
| publishDateSort | 2011 |
| publisher | Boca Raton [u.a.] |
| record_format | marc |
| series2 | Electronic materials and devices series |
| spelling | Razeghi, Manijeh Verfasser aut The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi 2. ed. CRC Press Boca Raton [u.a.] 2011 XX, 779 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electronic materials and devices series Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s DE-604 MOCVD-Verfahren (DE-588)4314628-4 s |
| spellingShingle | Razeghi, Manijeh The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4150649-2 (DE-588)4314628-4 (DE-588)4022993-2 |
| title | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications |
| title_auth | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications |
| title_exact_search | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications |
| title_full | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi |
| title_fullStr | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi |
| title_full_unstemmed | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi |
| title_short | The MOCVD challenge |
| title_sort | the mocvd challenge a survey of gainasp inp and gainasp gaas for photonic and electronic device applications |
| title_sub | a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications |
| topic | Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Drei-Fünf-Halbleiter MOCVD-Verfahren Halbleiter |
| work_keys_str_mv | AT razeghimanijeh themocvdchallengeasurveyofgainaspinpandgainaspgaasforphotonicandelectronicdeviceapplications |