The MOCVD challenge: a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | German |
Veröffentlicht: |
CRC Press
Boca Raton [u.a.]
2011
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Ausgabe: | 2. ed. |
Schriftenreihe: | Electronic materials and devices series
|
Schlagworte: | |
Beschreibung: | XX, 779 S. graph. Darst. |
ISBN: | 9781439806982 |
Internformat
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Datensatz im Suchindex
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any_adam_object | |
author | Razeghi, Manijeh |
author_facet | Razeghi, Manijeh |
author_role | aut |
author_sort | Razeghi, Manijeh |
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building | Verbundindex |
bvnumber | BV025603042 |
classification_rvk | UP 3100 UP 7550 |
ctrlnum | (OCoLC)917745096 (DE-599)BVBBV025603042 |
discipline | Physik |
edition | 2. ed. |
format | Book |
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id | DE-604.BV025603042 |
illustrated | Illustrated |
indexdate | 2024-07-09T22:37:19Z |
institution | BVB |
isbn | 9781439806982 |
language | German |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-020198287 |
oclc_num | 917745096 |
open_access_boolean | |
owner | DE-11 |
owner_facet | DE-11 |
physical | XX, 779 S. graph. Darst. |
publishDate | 2011 |
publishDateSearch | 2011 |
publishDateSort | 2011 |
publisher | Boca Raton [u.a.] |
record_format | marc |
series2 | Electronic materials and devices series |
spelling | Razeghi, Manijeh Verfasser aut The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi 2. ed. CRC Press Boca Raton [u.a.] 2011 XX, 779 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electronic materials and devices series Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s DE-604 MOCVD-Verfahren (DE-588)4314628-4 s |
spellingShingle | Razeghi, Manijeh The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Halbleiter (DE-588)4022993-2 gnd |
subject_GND | (DE-588)4150649-2 (DE-588)4314628-4 (DE-588)4022993-2 |
title | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications |
title_auth | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications |
title_exact_search | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications |
title_full | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi |
title_fullStr | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi |
title_full_unstemmed | The MOCVD challenge a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi |
title_short | The MOCVD challenge |
title_sort | the mocvd challenge a survey of gainasp inp and gainasp gaas for photonic and electronic device applications |
title_sub | a survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications |
topic | Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Halbleiter (DE-588)4022993-2 gnd |
topic_facet | Drei-Fünf-Halbleiter MOCVD-Verfahren Halbleiter |
work_keys_str_mv | AT razeghimanijeh themocvdchallengeasurveyofgainaspinpandgainaspgaasforphotonicandelectronicdeviceapplications |