Frontiers of characterization and metrology for nanoelectronics: 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics Gaithersburg, Maryland, 27 - 29 March 2007
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
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Melville, NY
AIP, American Inst. of Physics
2007
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| Schriftenreihe: | AIP conference proceedings
931 |
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XIII, 578 S. Ill. 1 CD-ROM |
| ISBN: | 9780735404410 |
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| adam_text | FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS 2007
INTERNATIONAL CONFERENCE ON FRONTIERS OF CHARACTERIZATION AND METROLOGY
FOR NANOELECTRONICS GAITHERSBURG, MARYLAND 27 - 29 MARCH 2007 ALL PAPERS
HAVE BEEN PEER-REVIEWED SPONSORING ORGANIZATIONS NATIONAL INSTITUTE OF
STANDARDS AND TECHNOLOGY SEMATECH SEMICONDUCTOR EQUIPMENT AND MATERIALS
INTERNATIONAL SEMICONDUCTOR RESEARCH CORPORATION SEMICONDUCTOR
INTERNATIONAL NATIONAL SCIENCE FOUNDATION IEEE ELECTRON DEVICES SOCIETY
POSTER SESSION SPONSORS APPLIED MATERIALS BEDE J.A.WOOLLAMCO.JNC.
OMICRON NANOTECHNOLOGY SOLID STATE MEASUREMENTS, INC. ) CD-ROM INCLUDED
EDITORS DAVID G. SEILER NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
GAITHERSBURG, MARYLAND ALAIN C. DIEBOLD UNIVERSITY AT ALBANY, NEW YORK
ROBERT MCDONALD TECHNOLOGY ASSOCIATES MONTE SERENO, CALIFORNIA C.
MICHAEL GARNER INTEL, SANTA CLARA, CALIFORNIA DAN HERR SEMICONDUCTOR
RESEARCH CORPORATION RESEARCH TRIANGLE PARK, NORTH CAROLINA RAJINDER R
KHOSLA NATIONAL SCIENCE FOUNDATION ARLINGTON, VIRGINIA ERIK M. SECULA
NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY GAITHERSBURG, MARYLAND
AMERICAN INSTITUTE 2PHYSICS MELVILLE, NEW YORK, 2007 AIP CONFERENCE
PROCEEDINGS VOLUME 931 I CONTENTS I PREFACE XI PLENARY THERE S PLENTY
OF DIFFICULTY NEAR THE BOTTOM 3 M. DURCAN AND S. LU CEA-LETI AS A
EUROPEAN MODEL OF COOPERATION IN NANOELECTRONICS 12 M. BRILLOUET
CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS 20 A. C. DIEBOLD
METROLOGY FOR EMERGING RESEARCH MATERIALS AND DEVICES 34 * M. GAMER AND
D. HERR I CHARACTERIZATION METHODS: OPTICAL REVIEW OF NSOM MICROSCOPY
FOR MATERIALS 43 Y, DE WILDE AND P.-A. LEMOINE OPTICAL CHARACTERIZATION
METHODS FOR IDENTIFYING CHARGE TRAPPING STATES IN THIN DIELECTRIC FILMS
53 J. PRICE PHOTO-REFLECTANCE CHARACTERIZATION OF NANOMETER SCALE ACTIVE
LAYERS IN SI 64 W. CHISM, D. PHAM, AND J. ALLGAIR DEVELOPMENT OF A
FOCUSED-BEAM ELLIPSOMETER BASED ON A NEW PRINCIPLE 69 S.-H. YE, Y. K.
KWAK, S. H. KIM, H. M. CHO, Y J. CHO, AND W. CHEGAL MEASURING TRENCH
STRUCTURES FOR MICROELECTRONICS WITH MODEL-BASED INFRARED REFLECTOMETRY
74 A. A. MAZNEV, A. MAZURENKO, * DURAEN , AND M. GOSTEIN ENHANCEMENT OF
INFRARED SPECTROSCOPY CAPABILITIES FOR NANOELECTRONIC AND NANOTECHNOLOGY
APPLICATIONS 79 N. ROCHAT, V. LOUP, P. BESSON, * OILLIC, P. MUR, A. C.
DEMAS, AND P. GERGAUD NANO-RAMAN: MONITORING NANOSCALE STRESS 84 B.
UHLIG, J.-H. ZOLLONDZ, M. HABERJAHN, H. BLOESS, AND P. KUECHER EXTENDING
CONVENTIONAL SCATTEROMETRY USING GENERALIZED ELLIPSOMETRY 89 P. REINIG,
*. GEILER, M. MOERT, *. HINGST, *. BLOESS, J. RENGER, AND L, M. ENG
INVESTIGATION OF APERTURELESS NSOM FOR MEASUREMENT OF STRESS IN STRAINED
SILICON-ON- INSULATOR TEST STRUCTURES 94 C. MCDONOUGH, J. ATESANG, Y
WANG, AND R. E. GEER METROLOGY AND OPTICAL CHARACTERIZATION OF PLASMA
ENHANCED CHEMICAL VAPOR DEPOSITION, (PECVD), LOW TEMPERATURE DEPOSITED
AMORPHOUS CARBON FILMS 99 F. FERRIEU, C. CHATON, D. NEIRA, * BEITIA, L.
P. MOTA, A. M. PAPON, AND A. TARNOWKA MANUFACTURE AND METROLOGY OF 300
MM SILICON WAFERS WITH ULTRA-LOW THICKNESS VARIATION 105 U. GRIESMANN,
Q. WANG, M. TRICARD, P. DUMAS, AND * HALL REAL-TIME, HIGH RESOLUTION,
DYNAMIC SURFACE CHARGE WAFER MAPPING FOR ADVANCED ION IMPLANT PROCESS
CONTROL ILL K. GURCAN, A. BERTUCH, AND K. STEEPLES LASER SCATTERING: A
FAST, SENSITIVE, IN-LINE TECHNIQUE FOR ADVANCED PROCESS DEVELOPMENT AND
MONITORING 116 E. NOLOT, B. ARRAZAT, S. FAVIER, Y BORDE, J. F.
DAMLENCOURT, B. VINCENT, O. KERMARREC, V. CARRON, F. NEMOUCHI, P.
VANDELLE, Y BOGUMILOWICZ, AND A. DANEL IN SITU MONITORING OF HAFNIUM
OXIDE ATOMIC LAYER DEPOSITION 121 J. E. MASLAR, W. S. HURST, D. R.
BURGESS, JR., W. A. KIMES, N. V NGUYEN, AND E. F. MOORE V
CHARACTERIZATION METHODS: PHYSICAL AND STRUCTURAL ANALYSIS OF NICKEL
SUICIDES BY SIMS AND LEAP 129 P. RONSHEIM, J. MCMURRAY, P. FLAITZ, C.
PARKS, K. THOMPSON, D. LARSON, AND T. F. KELLY ION PROFILING OF
IMPLANTED DOPANTS IN SI (001) WITH EXCESS VACANCY CONCENTRATION 137 M.
DALPONTE, H. BOUDINOV, L. V. GONCHAROVA, T. FENG, E. GARFUNKEL, AND T.
GUSTAFSSON SIMS ANALYSES OF ULTRA-LOW ENERGY * ION IMPLANTS IN SI:
EVALUATION OF PROFILE SHAPE AND DOSE ACCURACY 142 * W. MAGEE, R. S.
HOCKETT, T. H. BUEYUEKLIMANLI, I. ABDELREHIM, AND J. W. MARINO USE OF
DROP-ON-DEMAND INKJET PRINTING TECHNOLOGY TO PRODUCE TRACE METAL
CONTAMINATION STANDARDS FOR THE SEMICONDUCTOR INDUSTRY 146 E. WINDSOR,
A. FAHEY, AND G. GILLEN THIN-FILM NANOCALORIMETRY: A NEW APPROACH TO THE
EVALUATION OF INTERFACIAL STABILITY FOR NANOELECTRONIC APPLICATIONS 151
L. P. COOK, R. E. CAVICCHI, M. L. GREEN, *. *. MONTGOMERY, AND W. F.
EGELHOFF STRENGTH AND FRACTURE MEASUREMENTS AT THE NANO SCALE 156 E. R.
FULLER, JR., G. D. QUINN, AND R. F. COOK HELIUM ION MICROSCOPY: A NEW
TECHNIQUE FOR SEMICONDUCTOR METROLOGY AND NANOTECHNOLOGY 161 M. T.
POSTEK, A. E. VLADAR, J. KRAMAR, L. A. STERN, J. NOTTE, AND S. MCVEY
NEED FOR STANDARDIZATION OF EBSD MEASUREMENTS FOR MICROSTRUCTURAL
CHARACTERIZATION OF THIN FILM STRUCTURES 168 R. H. GEISS AND D. T. READ
CHEMICAL MECHANICAL PLANARIZATION (CMP) METROLOGY FOR 45/32 NM
TECHNOLOGY GENERATIONS 173 A. NUTSCH AND L. PFITZNER THIN FILMS
CHARACTERIZATION BY ULTRA TRACE METROLOGY 178 A. DANEL, E. NOLOT, S.
LHOSTIS, Y. CAMPIDELLI, M.-L. CALVO-MUNOZ, T. DECORPS, T. LARDIN, M.
VEILLEROT, H. KOHNO, AND M. YAMAGAMI CHARACTERIZATION METHODS: X-RAY
OFF-SPECULAR X-RAY AND NEUTRON REFLECTOMETRY FOR THE STRUCTURAL
CHARACTERIZATION OF BURIED INTERFACES 185 K. A. LAVERY, V. M. PRABHU, E.
K. LIN, W.-L. WU, S. SATIJA, AND M. WORMINGTON PROCESS MONITORING AND
SURFACE CHARACTERIZATION BY XPS IN A SEMICONDUCTOR FABRICATION LINE 191
N. CABUIL, A. LE GOUIL, B. DICKSON, A. LAGHA, M. AMINPUR, * CHATON,
J.-C. ROYER, AND O. DOCLOT SILICON LOSS METROLOGY USING SYNCHROTRON
X-RAY REFLECTANCE AND BRAGG DIFFRACTION 196 M. BHARGAVA, W. DONNER, A.
SRIVASTAVA, AND J. C. WOLFE DISTRIBUTION CORRECTION FOR RAPID, HIGH
PRECISION XPS MEASUREMENTS OF THICKNESS AND DOSE 201 W. NIEVEEN X-RAY
REFLECTIVITY MEASUREMENTS OF NANOSCALE STRUCTURES: LIMITS OF THE
EFFECTIVE MEDIUM APPROXIMATION 209 H.-J. LEE, * L. SOLES, S. RANG, H. W.
RO, E. K. LIN, AND W.-L. WU CMP CONTROL OF MULTI-LAYER INTER-LAYER
DIELECTRICS (ILD) USING X-RAY REFLECTIVITY 216 R. E. BRYANT, H. PORTER,
J. GALLEGOS, J. O DELL, AND D. AGNIHOTRI ASYMMETRIC RELAXATION OF SIGE
IN PATTERNED SI LINE STRUCTURES 220 M. WORMINGTON, T. LAFFORD, S. GODNY,
P. RYAN, R. LOO, A. HIKAVYY, N. BHOURI, AND M. CAYMAX APPLICATIONS OF
X-RAY REFLECTOMETRY TO DEVELOP AND MONITOR FEOL PROCESSES FOR SUB-45NM
TECHNOLOGY NODES 226 E. NOLOT, Y BOGUMILOWICZ, S. LHOSTIS, AND A. DANEL
ELECTRICAL MEASUREMENTS USJ METROLOGY: FROM 0D TO 3D ANALYSIS 233 W.
VANDERVORST VI LEAKAGE CURRENT AND DOPANT ACTIVATION CHARACTERIZATION OF
SDLYHALO CMOS JUNCTIONS WITH NON-CONTACT JUNCTION PHOTO-VOLTAGE
METROLOGY 246 V. N. FAIFER, D. K. SCHRODER, M. I. CURRENT, T. CLARYSSE,
P. J. TIMANS, T. ZANGERLE, W. VANDERVORST, T. M. H. WONG, A. MOUSSA, S.
MCCOY, J. GELPEY, W. LERCH, S. PAUL, AND D. BOLZE NIST TRACEABLE SMALL
SIGNAL SURFACE PHOTO VOLTAGE REFERENCE WAFER 251 A. BERTUCH AND K.
STEEPLES MICRO-PROBE CV AND IV CHARACTERIZATION OF THIN DIELECTRIC FILMS
ON PRODUCT-WAFER SCRIBE-LINE STRUCTURES 255 A. FENG, V. V. SOUCHKOV, T.
M. H. WONG, V. N. FAIFER, AND M. I. CURRENT DOPANT ACTIVATION AND
PROFILE DETERMINATION WITH AN ELASTIC MATERIAL PROBE (EM-PROBE) 261 R.
J. HILLARD, * W. YE, AND J. O. BORLAND DIRECT MONITORING OF EOT-J LEAK
CHARACTERISTICS FOR SION AND HIGH-*- GATE DIELECTRICS 265 R. J. HILLARD,
* KALNAS, AND H. UMEDA APPLICATION OF NON-CONTACT CORONA-KELVIN
METROLOGY FOR CHARACTERIZATION OF PLASMA NITRIDED SI0 2 270 A. BELYAEV,
D. MARINSKIY, M. WILSON, J. DAMICO, L. JASTRZEBSKI, AND J. LAGOWSKI THE
CONTINUOUS ANODIC OXIDATION TECHNIQUE 275 S. PRUSSIN ELECTRICAL
PROPERTIES OF HYBRID-ORIENTATION SILICON BONDED INTERFACES 279 M. *
WAGENER, R. H. ZHANG, M. SEACRIST, M. RIES, AND G. A. ROZGONYI GATE
DIELECTRICS NIST METHOD FOR DETERMINING MODEL-INDEPENDENT STRUCTURAL
INFORMATION BY X-RAY REFLECTOMETRY 287 D. WINDOVER, D. L. GIL, J. P.
CLINE, A HENINS, N. ARMSTRONG, P. Y. HUNG, S. C. SONG, R. JAMMY, AND A.
C. DIEBOLD COUPLING OF ADVANCED OPTICAL AND CHEMICAL CHARACTERIZATION
TECHNIQUES FOR OPTIMIZATION OF HIGH-*: DIELECTRICS WITH NANOMETER RANGE
THICKNESS 292 C. LICITRA, E. MARTINEZ, N. ROCHAT, T. VEYRON, H.
GRAMPEIX, M. GELY, J. P. COLONNA, AND G. MOLAS COMBINATORIAL
METHODOLOGIES APPLIED TO THE ADVANCED CMOS GATE STACK 297 K.-S. CHANG,
N. D. BASSIM, P. K. SCHENCK, J. SUEHLE, I. TAKEUCHI, AND M. L. GREEN
DISTINGUISHABILITY OF N COMPOSITION PROFILES IN SION FILMS ON SI BY
ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY 303 * J. POWELL, W. S.
M. WERNER, AND W. SMEKAL INTERNAL PHOTOEMISSION SPECTROSCOPY OF METAL
GATE/HIGH-A/SEMICONDUCTOR INTERFACES 308 N. V. NGUYEN, O. KIRILLOV, H.
D. XIONG, AND J. S. SUEHLE SPECTROSCOPIC STUDIES OF BAND EDGE ELECTRONIC
STATES IN ELEMENTAL HIGH-* OXIDE DIELECTRICS ON SI AND GE SUBSTRATES 315
G. LUCOVSKY, H. SEO, L. B. FLEMING, M. D. ULRICH, AND J. LIINING VUV
REFLECTOMETRY FOR THIN FILM THICKNESS AND COMPOSITION METROLOGY AND
PROCESS DEVELOPMENT AND CONTROL 320 M. WELDON, H. CHATHAM, AND L.
BARTHOLOMEW GATE METAL-INDUCED DIFFUSION AND INTERFACE REACTIONS IN HF
OXIDE FILMS ON SI 324 L. V. GONCHAROVA, M. DALPONTE, O. CELIK, E.
GARFUNKEL, T. GUSTAFSSON, P. S. LYSAGHT, AND G. I. BERSUKER HARD X-RAY
PHOTOEMISSION EXPERIMENTS ON NOVEL GE-BASED METAL GATE/HIGH-*: STACKS
329 J. RUBIO-ZUAZO, E. MARTINEZ, P. BATUDE, L. CLAVELIER, F. SOIRA, A.
CHABLI, AND G. R. CASTRO INTERCONNECT / LOW-- METROLOGY OF SILICIDE
CONTACTS FOR FUTURE CMOS 337 S. ZOLLNER, R. B. GREGORY, M. L. KOTTKE, V.
VARTANIAN, X.-D. WANG. D. THEODORE, P. L. FEJES, J. R. CONNER, M.
RAYMOND, X. ZHU, D. DENNING, S. BOLTON, K. CHANG, R. NOBLE, M.
JAHANBANI, M. ROSSOW, D. GOEDEKE, S. FILIPIAK, R. GARCIA, D. JAWARANI,
B. TAYLOR, B.-Y NGUYEN, P. E. CRABTREE, AND A. THEAN VII ULTRA LOW-ZC
METROLOGY USING X-RAY REFLECTIVITY AND SMALL-ANGLE X-RAY SCATTERING
TECHNIQUES 347 L. PLANTIER, J.-P. GONCHOND, F. PERNOT, A. PELED, * WYON,
J.-C. ROYER, AND B. YOKHIN UNDER-BUMP METALLIZATION (UBM) CONTROL USING
X-RAY FLUORESCENCE (XRF) 352 D. AGNIHOTRI, D. BROWN, J. IMHOF, J.
O DELL, AND A. TOKAR CHARACTERIZATION OF COPPER LINE ARRAY EROSION WITH
PICOSECOND ULTRASONICS 357 N. PIC, K. BENNEDINE, G. TAS, D. ALLIATA, AND
J. CLERICO COMPARISON OF SEVERAL METROLOGY TECHNIQUES FOR IN-LINE
PROCESS MONITORING OF POROUS SIOCH 362 D. FOSSATI, * BEITIA, L. YU, L.
PLANTIER, G. IMBERT, F. VOLPI, AND J.-C. ROYER MICROWAVE IMPEDANCE
MICROSCOPE FOR NON-CONTACT ELECTRICAL METROLOGY OF NANO- INTERCONNECT
MATERIALS 367 V. V. TALANOV AND A. R. SCHWARTZ LITHOGRAPHY EUV
LITHOGRAPHY: NEW METROLOGY CHALLENGES 375 O. WOOD A LABORATORY SCALE
CRITICAL-DIMENSION SMALL-ANGLE X-RAY SCATTERING INSTRUMENT 382 D. L. **,
* WANG, E. K. LIN, R. L. JONES, AND W.-L. WU CD REFERENCE MATERIALS
FABRICATED ON MONOLITHIC 200 MM WAFERS FOR AUTOMATED METROLOGY TOOL
APPLICATIONS 387 R. A. ALLEN, R. G. DIXSON, M. W. CRESSWELL, W. F.
GUTHRIE, B. J. R. SHULVER, A. S. BUNTING, J. *. *. STEVENSON, AND A. J.
WALTON MODELING AND ANALYSIS OF SCATTEROMETRY SIGNATURES FOR OPTICAL
CRITICAL DIMENSION REFERENCE MATERIAL APPLICATIONS 392 H. J. PATRICK, T.
A. GERMER, M. W. CRESSWELL, R. A. ALLEN, R. G. DIXSON, AND M. BISHOP
ZERO-ORDER AND SUPER-RESOLVED IMAGING OF ARRAYED NANOSCALE LINES USING
SCATTERFIELD MICROSCOPY 397 B. M. BARNES, R. ATTOTA, L. P. HOWARD, P.
LIPSCOMB, M. T. STOCKER, AND R. M. SILVER LINE EDGE ROUGHNESS AND CROSS
SECTIONAL CHARACTERIZATION OF SUB-50 NM STRUCTURES USING CRITICAL
DIMENSION SMALL ANGLE X-RAY SCATTERING 402 * WANG, R. L. JONES, E. K.
LIN, W.-L. WU, D. L. HO, J. S. VILLARRUBIA, K.-W. CHOI, J. S. CLARKE, J.
ROBERTS, R. BRISTOL, AND B. BUNDAY LINEWIDTH MEASUREMENT BASED ON
AUTOMATICALLY MATCHED AND STITCHED AFM IMAGES 407 W. CHU, J. FU, R.
DIXSON, AND T. VORBURGER HUNTING THE ORIGINS OF LINE WIDTH ROUGHNESS
WITH CHEMICAL FORCE MICROSCOPY 413 J. T. WOODWARD, J. HWANG, V. M.
PRABHU, AND K.-W. CHOI METROLOGY FOR GRAYSCALE LITHOGRAPHY 419 R. MURALI
AUTOMATED METROLOGY FOR SEM CALIBRATION AND CD LINE MEASUREMENTS USING
IMAGE ANALYSIS AND SEM MODELING METHODS 423 V. KHVATKOV, V. ALIEVSKI, R.
KADUSHNIKOV, AND S. BABIN METROLOGY RELATED TO THE MULTILAYER MIRRORS IN
AN EXTREME-ULTRAVIOLET STEPPER 428 * TARRIO, S. B. HILL, I. ERMANOSKI,
T. B. LUCATORTO, T. E. MADEY, M. CHANDHOK, AND M. FANG METROLOGY FOR
BEYOND CMOS AND EXTREME CMOS DEVICES ANALYTICS AND METROLOGY OF STRAINED
SILICON STRUCTURES BY RAMAN AND NANO-RAMAN SPECTROSCOPY 435 M. HECKER,
L. ZHU, C. GEORGI, I. ZIENERT, J. RINDERKNECHT, H. GEISLER, AND E.
ZSCHECH NEW MATERIALS AND STRUCTURES FOR TRANSISTORS BASED ON SPIN,
CHARGE AND WAVEFUNCTION PHASE CONTROL 445 S. BANERJEE METROLOGY AND
CHARACTERIZATION FOR EXTENDING SILICON CMOS 449 T. KANAYAMA VLLL METHODS
TO CHARACTERIZE THE ELECTRICAL AND MECHANICAL PROPERTIES OF SI NANOWIRES
457 Q. LI, S.-M. KOO, H. D. XIONG, M. D. EDELSTEIN, J. S. SUEHLE, X.
ZHU, D. E. IOANNOU, AND * A. RICHTER FLUORESCENT TAG BASED METROLOGY FOR
SELF-ASSEMBLED MOLECULAR DEVICES 462 J. RUAN, S. RAGHUNATHAN, J. G.
HARTLEY, K. V. SINGH, H. E. AKIN, N. G. PORTNEY, AND M. OZKAN THE
CHARACTERIZATION OF SILICON-BASED MOLECULAR DEVICES 467 N.
GERGEL-HACKETT, C.A. HACKER, L. J. RICHTER, *. A. KIRILLOV, AND * A.
RICHTER SEMPA IMAGING FOR SPINTRONICS APPLICATIONS 472 J. UNGURIS, S.-H.
CHUNG, AND D. T. PIERCE SPIN-POLARIZED INELASTIC ELECTRON TUNNELING
SPECTROSCOPY OF MOLECULAR MAGNETIC TUNNEL JUNCTIONS 477 W. WANG AND * A.
RICHTER IMPEDANCE AND CAPACITANCE MEASUREMENT OF INDIVIDUAL CARBON
NANOTUBES 483 J. OBRZUT, K. MIGLER, L. DONG, AND J. JIAO MICROSCOPY FOR
NANOELECTRONICS AN INTRODUCTION TO THE HELIUM ION MICROSCOPE 489 *.
NOTTE, B. WARD, N. ECONOMOU, R. HILL, R. PERCIVAL, L. FARKAS, AND S.
MCVEY DOPANT PROFILING IN THE ***, PROGRESS TOWARDS QUANTITATIVE
ELECTRON HOLOGRAPHY 497 D. COOPER, R. TRUCHE, A. CHABLI, A. C.
TWITCHETT-HARRISON, P. A. MIDGLEY, AND R. E. DUNIN-BORKOWSKI
ENERGY-FILTERED PHOTOELECTRON EMISSION MICROSCOPY (EF-PEEM) FOR IMAGING
NANOELECTRONIC MATERIALS 502 O. RENAULT AND A. CHABLI A METHOD FOR
PRECISE *** SAMPLE PREPARATION USING THE FIB EX-SITU LIFT-OUT TECHNIQUE
WITH A MODIFIED COPPER RING IN SEMICONDUCTOR DEVICES 507 J. L. LUE, *.
F. CHANG, J. *. CHEN, AND T. WANG COMPUTATIONAL SCANNING ELECTRON
MICROSCOPY 512 L. B. RAD, H. FENG, J. YE, AND R. F. W. PEASE SCANNING
PROBES PROTOCOL OPTIMIZATION FOR WORK-FUNCTION MEASUREMENTS OF METAL
GATES USING KELVIN FORCE MICROSCOPY 521 D. MARIOLLE, K. KAJA, F. BERTIN,
E. MARTINEZ, F. MARTIN, AND R. GASSILLOUD METROLOGY FOR HIGH-FREQUENCY
NANOELECTRONICS 525 T. M. WALLIS, A. IMTIAZ, H. T. NEMBACH, P. RICE, AND
P. KABOS SCANNING KELVIN FORCE MICROSCOPY FOR CHARACTERIZING
NANOSTRUCTURES IN ATMOSPHERE 530 J. J. KOPANSKI, M. Y. AFRIDI, S.
JELIAZKOV, W. JIANG, AND T. R. WALKER SURFACE POTENTIAL MAPPING AND
CHARGE CENTER DETECTION ON OXIDIZED SILICON SURFACES BY VACUUM-GAP
MODULATION SCANNING TUNNELING SPECTROSCOPY 535 L. BOLOTOV, M. NISHIZAWA,
AND T. KANAYAMA EFFECTS OF TOPOGRAPHY AND MULTI-ASPERITY CONTACTS ON
NANO-SCALE ELASTIC PROPERTY MEASUREMENTS BY ATOMIC FORCE ACOUSTIC
MICROSCOPY 540 G. STAN AND R. F. COOK AFM TIPS FOR 58 NM AND SMALLER
NODE APPLICATIONS 545 A. HEIDELBERG, X. WU, S. PHILIPP, P. WEIDNER, P.
KUECHER, AND H. BLOESS NANO-RAMAN IMAGING IS REACHING SEMICONDUCTORS 549
R. D. HARTSCHUH, N. LEE, A. KISLIUK, J. F. MAGUIRE, M. GREEN, M. D.
FOSTER, AND A. P. SOKOLOV THEORY, MODELING, AND SIMULATION DOPING
NANOCRYSTALS AND THE ROLE OF QUANTUM CONFINEMENT 555 T.-L. CHAN, M. L.
TIAGO, AND J. R. CHELIKOWSKY NANOELECTRONICS: METROLOGY AND COMPUTATION
563 M. LUNDSTROM, J. V. CLARK, G. KLIMECK, AND A. RAMAN AUTHOR INDEX 569
KEY WORDS INDEX 575 IX
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| any_adam_object | 1 |
| author2 | Seiler, David G. |
| author2_role | edt |
| author2_variant | d g s dg dgs |
| author_facet | Seiler, David G. |
| building | Verbundindex |
| bvnumber | BV025511967 |
| classification_rvk | UP 5050 UV 9550 VE 9850 ZN 3700 |
| ctrlnum | (OCoLC)917288754 (DE-599)BVBBV025511967 |
| discipline | Chemie / Pharmazie Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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| geographic | Gaithersburg <Md., 2007> |
| geographic_facet | Gaithersburg <Md., 2007> |
| id | DE-604.BV025511967 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:35:37Z |
| institution | BVB |
| institution_GND | (DE-588)6068496-3 |
| isbn | 9780735404410 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-020122021 |
| oclc_num | 917288754 |
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| owner_facet | DE-11 |
| physical | XIII, 578 S. Ill. 1 CD-ROM |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | AIP, American Inst. of Physics |
| record_format | marc |
| series2 | AIP conference proceedings |
| spelling | Frontiers of characterization and metrology for nanoelectronics 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics Gaithersburg, Maryland, 27 - 29 March 2007 eds. David G. Seiler ... Melville, NY AIP, American Inst. of Physics 2007 XIII, 578 S. Ill. 1 CD-ROM txt rdacontent n rdamedia nc rdacarrier AIP conference proceedings 931 Literaturangaben Kongress (DE-588)4130470-6 gnd rswk-swf Metrologie (DE-588)4169749-2 gnd rswk-swf Nanoelektronik (DE-588)4732034-5 gnd rswk-swf Gaithersburg <Md., 2007> rswk-swf Nanoelektronik (DE-588)4732034-5 s Metrologie (DE-588)4169749-2 s Kongress (DE-588)4130470-6 s Gaithersburg <Md., 2007> g DE-604 Seiler, David G. edt International Conference on Frontiers of Characterization and Metrology for Nanoelectronics 6 2007 Gaithersburg, Md. Sonstige (DE-588)6068496-3 oth American Institute of Physics <New York, NY> AIP conference proceedings 931 (DE-604)BV001899984 931 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020122021&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Frontiers of characterization and metrology for nanoelectronics 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics Gaithersburg, Maryland, 27 - 29 March 2007 Kongress (DE-588)4130470-6 gnd Metrologie (DE-588)4169749-2 gnd Nanoelektronik (DE-588)4732034-5 gnd |
| subject_GND | (DE-588)4130470-6 (DE-588)4169749-2 (DE-588)4732034-5 |
| title | Frontiers of characterization and metrology for nanoelectronics 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics Gaithersburg, Maryland, 27 - 29 March 2007 |
| title_auth | Frontiers of characterization and metrology for nanoelectronics 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics Gaithersburg, Maryland, 27 - 29 March 2007 |
| title_exact_search | Frontiers of characterization and metrology for nanoelectronics 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics Gaithersburg, Maryland, 27 - 29 March 2007 |
| title_full | Frontiers of characterization and metrology for nanoelectronics 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics Gaithersburg, Maryland, 27 - 29 March 2007 eds. David G. Seiler ... |
| title_fullStr | Frontiers of characterization and metrology for nanoelectronics 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics Gaithersburg, Maryland, 27 - 29 March 2007 eds. David G. Seiler ... |
| title_full_unstemmed | Frontiers of characterization and metrology for nanoelectronics 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics Gaithersburg, Maryland, 27 - 29 March 2007 eds. David G. Seiler ... |
| title_short | Frontiers of characterization and metrology for nanoelectronics |
| title_sort | frontiers of characterization and metrology for nanoelectronics 2007 international conference on frontiers of characterization and metrology for nanoelectronics gaithersburg maryland 27 29 march 2007 |
| title_sub | 2007 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics Gaithersburg, Maryland, 27 - 29 March 2007 |
| topic | Kongress (DE-588)4130470-6 gnd Metrologie (DE-588)4169749-2 gnd Nanoelektronik (DE-588)4732034-5 gnd |
| topic_facet | Kongress Metrologie Nanoelektronik Gaithersburg <Md., 2007> |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=020122021&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899984 |
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