Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Mikrofilm Buch |
| Sprache: | English |
| Veröffentlicht: |
1996
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| Ausgabe: | [Mikrofiche-Ausg.] |
| Schlagworte: | |
| Beschreibung: | Zsfassung in dt. Sprache |
| Beschreibung: | 192 S. Ill., graph. Darst. |
Internformat
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| 100 | 1 | |a Braun, Wolfgang |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |c von Wolfgang Braun |
| 250 | |a [Mikrofiche-Ausg.] | ||
| 264 | 1 | |c 1996 | |
| 300 | |a 192 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b h |2 rdamedia | ||
| 338 | |b he |2 rdacarrier | ||
| 500 | |a Zsfassung in dt. Sprache | ||
| 502 | |a Berlin, Humboldt-Univ., Fachbereich Physik, Diss., 1996 | ||
| 533 | |a Mikrofiche-Ausgabe |n Berlin : Univ.-Bibliothek der Humboldt-Univ., [2000]. 3 Mikrofiches : 20x | ||
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| 776 | 0 | 8 | |i Reproduktion von |a Braun, Wolfgang |t Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |d 1996 |
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Datensatz im Suchindex
| _version_ | 1804142334574592000 |
|---|---|
| any_adam_object | |
| author | Braun, Wolfgang |
| author_facet | Braun, Wolfgang |
| author_role | aut |
| author_sort | Braun, Wolfgang |
| author_variant | w b wb |
| building | Verbundindex |
| bvnumber | BV025271127 |
| classification_rvk | UQ 2200 |
| ctrlnum | (OCoLC)917082710 (DE-599)BVBBV025271127 |
| discipline | Physik |
| edition | [Mikrofiche-Ausg.] |
| format | Thesis Microfilm Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV025271127 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:30:07Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-019906377 |
| oclc_num | 917082710 |
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| physical | 192 S. Ill., graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| record_format | marc |
| spelling | Braun, Wolfgang Verfasser aut Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth von Wolfgang Braun [Mikrofiche-Ausg.] 1996 192 S. Ill., graph. Darst. txt rdacontent h rdamedia he rdacarrier Zsfassung in dt. Sprache Berlin, Humboldt-Univ., Fachbereich Physik, Diss., 1996 Mikrofiche-Ausgabe Berlin : Univ.-Bibliothek der Humboldt-Univ., [2000]. 3 Mikrofiches : 20x Aluminiumarsenid (DE-588)4324566-3 gnd rswk-swf Halbleitergrenzfläche (DE-588)4158802-2 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf RHEED (DE-588)4295703-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumarsenid (DE-588)4019155-2 s Aluminiumarsenid (DE-588)4324566-3 s Molekularstrahlepitaxie (DE-588)4170399-6 s Halbleitergrenzfläche (DE-588)4158802-2 s RHEED (DE-588)4295703-5 s DE-604 Reproduktion von Braun, Wolfgang Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth 1996 |
| spellingShingle | Braun, Wolfgang Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth Aluminiumarsenid (DE-588)4324566-3 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Galliumarsenid (DE-588)4019155-2 gnd RHEED (DE-588)4295703-5 gnd |
| subject_GND | (DE-588)4324566-3 (DE-588)4158802-2 (DE-588)4170399-6 (DE-588)4019155-2 (DE-588)4295703-5 (DE-588)4113937-9 |
| title | Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| title_auth | Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| title_exact_search | Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| title_full | Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth von Wolfgang Braun |
| title_fullStr | Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth von Wolfgang Braun |
| title_full_unstemmed | Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth von Wolfgang Braun |
| title_short | Reflection high-energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| title_sort | reflection high energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| topic | Aluminiumarsenid (DE-588)4324566-3 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Galliumarsenid (DE-588)4019155-2 gnd RHEED (DE-588)4295703-5 gnd |
| topic_facet | Aluminiumarsenid Halbleitergrenzfläche Molekularstrahlepitaxie Galliumarsenid RHEED Hochschulschrift |
| work_keys_str_mv | AT braunwolfgang reflectionhighenergyelectrondiffractionstudiesofsemiconductorinterfacesduringmolecularbeamepitaxygrowth |