Silicon carbide: a high temperature semiconductor ; Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1958
Gespeichert in:
| Weitere Verfasser: | |
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| Format: | Tagungsbericht Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Oxford [u.a.]
Pergamon Press
1960
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| Schlagworte: | |
| Beschreibung: | XIX, 521 S. |
Internformat
MARC
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Datensatz im Suchindex
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| author2 | O'Connor, Joseph R. |
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| discipline | Physik |
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| physical | XIX, 521 S. |
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| spelling | Silicon carbide a high temperature semiconductor ; Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1958 ed. by J. R. O Connor ... Oxford [u.a.] Pergamon Press 1960 XIX, 521 S. txt rdacontent n rdamedia nc rdacarrier Binäres System (DE-588)4191271-8 gnd rswk-swf Kristallstruktur (DE-588)4136176-3 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Hochtemperaturverhalten (DE-588)4160294-8 gnd rswk-swf Konferenz (DE-588)4032055-8 gnd rswk-swf Einkristall (DE-588)4013901-3 gnd rswk-swf Physikalische Größe (DE-588)4076117-4 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s DE-604 Konferenz (DE-588)4032055-8 s Halbleiter (DE-588)4022993-2 s Hochtemperaturverhalten (DE-588)4160294-8 s Einkristall (DE-588)4013901-3 s Physikalische Größe (DE-588)4076117-4 s Binäres System (DE-588)4191271-8 s Kristallstruktur (DE-588)4136176-3 s O'Connor, Joseph R. edt Conference on Silicon Carbide 1 1959 Boston, Mass. Sonstige (DE-588)5201188-4 oth |
| spellingShingle | Silicon carbide a high temperature semiconductor ; Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1958 Binäres System (DE-588)4191271-8 gnd Kristallstruktur (DE-588)4136176-3 gnd Halbleiter (DE-588)4022993-2 gnd Hochtemperaturverhalten (DE-588)4160294-8 gnd Konferenz (DE-588)4032055-8 gnd Einkristall (DE-588)4013901-3 gnd Physikalische Größe (DE-588)4076117-4 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4191271-8 (DE-588)4136176-3 (DE-588)4022993-2 (DE-588)4160294-8 (DE-588)4032055-8 (DE-588)4013901-3 (DE-588)4076117-4 (DE-588)4055009-6 (DE-588)1071861417 |
| title | Silicon carbide a high temperature semiconductor ; Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1958 |
| title_auth | Silicon carbide a high temperature semiconductor ; Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1958 |
| title_exact_search | Silicon carbide a high temperature semiconductor ; Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1958 |
| title_full | Silicon carbide a high temperature semiconductor ; Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1958 ed. by J. R. O Connor ... |
| title_fullStr | Silicon carbide a high temperature semiconductor ; Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1958 ed. by J. R. O Connor ... |
| title_full_unstemmed | Silicon carbide a high temperature semiconductor ; Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1958 ed. by J. R. O Connor ... |
| title_short | Silicon carbide |
| title_sort | silicon carbide a high temperature semiconductor proceedings of the conference on silicon carbide boston massachusetts april 2 3 1958 |
| title_sub | a high temperature semiconductor ; Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1958 |
| topic | Binäres System (DE-588)4191271-8 gnd Kristallstruktur (DE-588)4136176-3 gnd Halbleiter (DE-588)4022993-2 gnd Hochtemperaturverhalten (DE-588)4160294-8 gnd Konferenz (DE-588)4032055-8 gnd Einkristall (DE-588)4013901-3 gnd Physikalische Größe (DE-588)4076117-4 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Binäres System Kristallstruktur Halbleiter Hochtemperaturverhalten Konferenz Einkristall Physikalische Größe Siliciumcarbid Konferenzschrift |
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