Gallium arsenide processing techniques:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Dedham, Mass. [u.a.]
Artech House
1985
|
| Schriftenreihe: | Artech House microwave library
|
| Schlagworte: | |
| Beschreibung: | XIII, 406 S. |
| ISBN: | 0890061521 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV025242928 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 100417s1985 |||| 00||| und d | ||
| 020 | |a 0890061521 |9 0-89006-152-1 | ||
| 035 | |a (OCoLC)633746029 | ||
| 035 | |a (DE-599)BVBBV025242928 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | |a und | ||
| 049 | |a DE-11 | ||
| 084 | |a UP 3100 |0 (DE-625)146372: |2 rvk | ||
| 100 | 1 | |a Williams, Ralph E. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Gallium arsenide processing techniques |c Ralph E. Williams |
| 264 | 1 | |a Dedham, Mass. [u.a.] |b Artech House |c 1985 | |
| 300 | |a XIII, 406 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Artech House microwave library | |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kristallstruktur |0 (DE-588)4136176-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumarsenid-Bauelement |0 (DE-588)4155861-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Lithografie |g Halbleitertechnologie |0 (DE-588)4191584-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kristallwachstum |0 (DE-588)4123579-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Elektrische Eigenschaft |0 (DE-588)4193812-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Fotolithografie |g Halbleitertechnologie |0 (DE-588)4174516-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Galliumarsenid-Bauelement |0 (DE-588)4155861-3 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Kristallstruktur |0 (DE-588)4136176-3 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Kristallwachstum |0 (DE-588)4123579-4 |D s |
| 689 | 2 | |5 DE-604 | |
| 689 | 3 | 0 | |a Lithografie |g Halbleitertechnologie |0 (DE-588)4191584-7 |D s |
| 689 | 3 | |5 DE-604 | |
| 689 | 4 | 0 | |a Fotolithografie |g Halbleitertechnologie |0 (DE-588)4174516-4 |D s |
| 689 | 4 | |5 DE-604 | |
| 689 | 5 | 0 | |a Elektrische Eigenschaft |0 (DE-588)4193812-4 |D s |
| 689 | 5 | |5 DE-604 | |
| 689 | 6 | 0 | |a Galliumarsenid |0 (DE-588)4019155-2 |D s |
| 689 | 6 | 1 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 6 | |8 1\p |5 DE-604 | |
| 689 | 7 | 0 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
| 689 | 7 | |8 2\p |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-019881053 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804142299347681280 |
|---|---|
| any_adam_object | |
| author | Williams, Ralph E. |
| author_facet | Williams, Ralph E. |
| author_role | aut |
| author_sort | Williams, Ralph E. |
| author_variant | r e w re rew |
| building | Verbundindex |
| bvnumber | BV025242928 |
| classification_rvk | UP 3100 |
| ctrlnum | (OCoLC)633746029 (DE-599)BVBBV025242928 |
| discipline | Physik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02386nam a2200613 c 4500</leader><controlfield tag="001">BV025242928</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">100417s1985 |||| 00||| und d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0890061521</subfield><subfield code="9">0-89006-152-1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)633746029</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV025242928</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">und</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-11</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3100</subfield><subfield code="0">(DE-625)146372:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Williams, Ralph E.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Gallium arsenide processing techniques</subfield><subfield code="c">Ralph E. Williams</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Dedham, Mass. [u.a.]</subfield><subfield code="b">Artech House</subfield><subfield code="c">1985</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XIII, 406 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Artech House microwave library</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kristallstruktur</subfield><subfield code="0">(DE-588)4136176-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumarsenid-Bauelement</subfield><subfield code="0">(DE-588)4155861-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Lithografie</subfield><subfield code="g">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4191584-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Elektrische Eigenschaft</subfield><subfield code="0">(DE-588)4193812-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Fotolithografie</subfield><subfield code="g">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4174516-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Galliumarsenid-Bauelement</subfield><subfield code="0">(DE-588)4155861-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Kristallstruktur</subfield><subfield code="0">(DE-588)4136176-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Lithografie</subfield><subfield code="g">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4191584-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">Fotolithografie</subfield><subfield code="g">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4174516-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="5" ind2="0"><subfield code="a">Elektrische Eigenschaft</subfield><subfield code="0">(DE-588)4193812-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="5" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="6" ind2="0"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="6" ind2="1"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="6" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="7" ind2="0"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="7" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-019881053</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| id | DE-604.BV025242928 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T22:29:33Z |
| institution | BVB |
| isbn | 0890061521 |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-019881053 |
| oclc_num | 633746029 |
| open_access_boolean | |
| owner | DE-11 |
| owner_facet | DE-11 |
| physical | XIII, 406 S. |
| publishDate | 1985 |
| publishDateSearch | 1985 |
| publishDateSort | 1985 |
| publisher | Artech House |
| record_format | marc |
| series2 | Artech House microwave library |
| spelling | Williams, Ralph E. Verfasser aut Gallium arsenide processing techniques Ralph E. Williams Dedham, Mass. [u.a.] Artech House 1985 XIII, 406 S. txt rdacontent n rdamedia nc rdacarrier Artech House microwave library Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Kristallstruktur (DE-588)4136176-3 gnd rswk-swf Galliumarsenid-Bauelement (DE-588)4155861-3 gnd rswk-swf Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd rswk-swf Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Elektrische Eigenschaft (DE-588)4193812-4 gnd rswk-swf Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Galliumarsenid-Bauelement (DE-588)4155861-3 s DE-604 Kristallstruktur (DE-588)4136176-3 s Kristallwachstum (DE-588)4123579-4 s Lithografie Halbleitertechnologie (DE-588)4191584-7 s Fotolithografie Halbleitertechnologie (DE-588)4174516-4 s Elektrische Eigenschaft (DE-588)4193812-4 s Galliumarsenid (DE-588)4019155-2 s Halbleitertechnologie (DE-588)4158814-9 s 1\p DE-604 Halbleiterphysik (DE-588)4113829-6 s 2\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Williams, Ralph E. Gallium arsenide processing techniques Halbleitertechnologie (DE-588)4158814-9 gnd Kristallstruktur (DE-588)4136176-3 gnd Galliumarsenid-Bauelement (DE-588)4155861-3 gnd Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd Kristallwachstum (DE-588)4123579-4 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd Halbleiterphysik (DE-588)4113829-6 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)4136176-3 (DE-588)4155861-3 (DE-588)4191584-7 (DE-588)4123579-4 (DE-588)4193812-4 (DE-588)4174516-4 (DE-588)4113829-6 (DE-588)4019155-2 |
| title | Gallium arsenide processing techniques |
| title_auth | Gallium arsenide processing techniques |
| title_exact_search | Gallium arsenide processing techniques |
| title_full | Gallium arsenide processing techniques Ralph E. Williams |
| title_fullStr | Gallium arsenide processing techniques Ralph E. Williams |
| title_full_unstemmed | Gallium arsenide processing techniques Ralph E. Williams |
| title_short | Gallium arsenide processing techniques |
| title_sort | gallium arsenide processing techniques |
| topic | Halbleitertechnologie (DE-588)4158814-9 gnd Kristallstruktur (DE-588)4136176-3 gnd Galliumarsenid-Bauelement (DE-588)4155861-3 gnd Lithografie Halbleitertechnologie (DE-588)4191584-7 gnd Kristallwachstum (DE-588)4123579-4 gnd Elektrische Eigenschaft (DE-588)4193812-4 gnd Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd Halbleiterphysik (DE-588)4113829-6 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| topic_facet | Halbleitertechnologie Kristallstruktur Galliumarsenid-Bauelement Lithografie Halbleitertechnologie Kristallwachstum Elektrische Eigenschaft Fotolithografie Halbleitertechnologie Halbleiterphysik Galliumarsenid |
| work_keys_str_mv | AT williamsralphe galliumarsenideprocessingtechniques |