Silicon Molecular Beam Epitaxy: Proceedings of the First International Symposium
Gespeichert in:
| Körperschaft: | |
|---|---|
| Weitere Verfasser: | |
| Format: | Tagungsbericht Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Pennington
Electrochemical Society
1985
|
| Schriftenreihe: | Proceedings / American Electrochemical Society
85/7 |
| Schlagworte: | |
| Beschreibung: | IX, 455 S. |
Internformat
MARC
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| 111 | 2 | |a International Symposium on Silicon Molecular Beam Epitaxy |n 1 |d 1985 |c Toronto |j Verfasser |0 (DE-588)5163561-6 |4 aut | |
| 245 | 1 | 0 | |a Silicon Molecular Beam Epitaxy |b Proceedings of the First International Symposium |c ed. by John C. Bean |
| 246 | 1 | 3 | |a Silicon Molecular Beam Epitaxy |
| 264 | 1 | |a Pennington |b Electrochemical Society |c 1985 | |
| 300 | |a IX, 455 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Proceedings / American Electrochemical Society |v 85/7 | |
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| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
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| 650 | 0 | 7 | |a Heteroepitaxie |0 (DE-588)4260178-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Messtechnik |0 (DE-588)4114575-6 |2 gnd |9 rswk-swf |
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| 689 | 7 | |5 DE-604 | |
| 700 | 1 | |a Bean, John C. |d 1950- |0 (DE-588)17272726X |4 edt | |
| 810 | 2 | |a American Electrochemical Society |t Proceedings |v 85/7 |w (DE-604)BV001900941 |9 85/7 | |
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Datensatz im Suchindex
| _version_ | 1804142298311688192 |
|---|---|
| any_adam_object | |
| author2 | Bean, John C. 1950- |
| author2_role | edt |
| author2_variant | j c b jc jcb |
| author_GND | (DE-588)17272726X |
| author_corporate | International Symposium on Silicon Molecular Beam Epitaxy Toronto |
| author_corporate_role | aut |
| author_facet | Bean, John C. 1950- International Symposium on Silicon Molecular Beam Epitaxy Toronto |
| author_sort | International Symposium on Silicon Molecular Beam Epitaxy Toronto |
| building | Verbundindex |
| bvnumber | BV025242072 |
| ctrlnum | (OCoLC)917015193 (DE-599)BVBBV025242072 |
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| genre_facet | Konferenzschrift |
| id | DE-604.BV025242072 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T22:29:33Z |
| institution | BVB |
| institution_GND | (DE-588)5163561-6 |
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| physical | IX, 455 S. |
| publishDate | 1985 |
| publishDateSearch | 1985 |
| publishDateSort | 1985 |
| publisher | Electrochemical Society |
| record_format | marc |
| series2 | Proceedings / American Electrochemical Society |
| spelling | International Symposium on Silicon Molecular Beam Epitaxy 1 1985 Toronto Verfasser (DE-588)5163561-6 aut Silicon Molecular Beam Epitaxy Proceedings of the First International Symposium ed. by John C. Bean Silicon Molecular Beam Epitaxy Pennington Electrochemical Society 1985 IX, 455 S. txt rdacontent n rdamedia nc rdacarrier Proceedings / American Electrochemical Society 85/7 Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Konferenz (DE-588)4032055-8 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Heteroepitaxie (DE-588)4260178-2 gnd rswk-swf Messtechnik (DE-588)4114575-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Konferenz (DE-588)4032055-8 s DE-604 Molekularstrahlepitaxie (DE-588)4170399-6 s Halbleiter (DE-588)4022993-2 s Silicium (DE-588)4077445-4 s Verbindungshalbleiter (DE-588)4062623-4 s Heteroepitaxie (DE-588)4260178-2 s Gitterbaufehler (DE-588)4125030-8 s Messtechnik (DE-588)4114575-6 s Bean, John C. 1950- (DE-588)17272726X edt American Electrochemical Society Proceedings 85/7 (DE-604)BV001900941 85/7 |
| spellingShingle | Silicon Molecular Beam Epitaxy Proceedings of the First International Symposium Verbindungshalbleiter (DE-588)4062623-4 gnd Konferenz (DE-588)4032055-8 gnd Silicium (DE-588)4077445-4 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Halbleiter (DE-588)4022993-2 gnd Gitterbaufehler (DE-588)4125030-8 gnd Heteroepitaxie (DE-588)4260178-2 gnd Messtechnik (DE-588)4114575-6 gnd |
| subject_GND | (DE-588)4062623-4 (DE-588)4032055-8 (DE-588)4077445-4 (DE-588)4170399-6 (DE-588)4022993-2 (DE-588)4125030-8 (DE-588)4260178-2 (DE-588)4114575-6 (DE-588)1071861417 |
| title | Silicon Molecular Beam Epitaxy Proceedings of the First International Symposium |
| title_alt | Silicon Molecular Beam Epitaxy |
| title_auth | Silicon Molecular Beam Epitaxy Proceedings of the First International Symposium |
| title_exact_search | Silicon Molecular Beam Epitaxy Proceedings of the First International Symposium |
| title_full | Silicon Molecular Beam Epitaxy Proceedings of the First International Symposium ed. by John C. Bean |
| title_fullStr | Silicon Molecular Beam Epitaxy Proceedings of the First International Symposium ed. by John C. Bean |
| title_full_unstemmed | Silicon Molecular Beam Epitaxy Proceedings of the First International Symposium ed. by John C. Bean |
| title_short | Silicon Molecular Beam Epitaxy |
| title_sort | silicon molecular beam epitaxy proceedings of the first international symposium |
| title_sub | Proceedings of the First International Symposium |
| topic | Verbindungshalbleiter (DE-588)4062623-4 gnd Konferenz (DE-588)4032055-8 gnd Silicium (DE-588)4077445-4 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Halbleiter (DE-588)4022993-2 gnd Gitterbaufehler (DE-588)4125030-8 gnd Heteroepitaxie (DE-588)4260178-2 gnd Messtechnik (DE-588)4114575-6 gnd |
| topic_facet | Verbindungshalbleiter Konferenz Silicium Molekularstrahlepitaxie Halbleiter Gitterbaufehler Heteroepitaxie Messtechnik Konferenzschrift |
| volume_link | (DE-604)BV001900941 |
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