Proceedings of the 14th International Conference on Defects in Semiconductors: ICDS-14 ; Paris, France, August 18-22, 1986
Gespeichert in:
| Körperschaft: | |
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| Weitere Verfasser: | |
| Format: | Tagungsbericht Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Zürich
Trans Tech Publications
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| Schriftenreihe: | Materials Science Forum
10 |
| Schlagworte: | |
| ISBN: | 0878495517 |
Internformat
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Datensatz im Suchindex
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| series2 | Materials Science Forum |
| spelling | International Conference on Defects in Semiconductors 14 1986 Paris Verfasser (DE-588)808258-3 aut Proceedings of the 14th International Conference on Defects in Semiconductors ICDS-14 ; Paris, France, August 18-22, 1986 ed. by H. J. von Bardeleben Zürich Trans Tech Publications txt rdacontent n rdamedia nc rdacarrier Materials Science Forum 10-12 Kristallstruktur (DE-588)4136176-3 gnd rswk-swf Grenzfläche (DE-588)4021991-4 gnd rswk-swf Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf Verunreinigung (DE-588)4188107-2 gnd rswk-swf Diffusion (DE-588)4012277-3 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Konferenz (DE-588)4032055-8 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s DE-604 Gitterbaufehler (DE-588)4125030-8 s Kristallstruktur (DE-588)4136176-3 s Verbindungshalbleiter (DE-588)4062623-4 s Halbleiteroberfläche (DE-588)4137418-6 s Grenzfläche (DE-588)4021991-4 s Diffusion (DE-588)4012277-3 s Verunreinigung (DE-588)4188107-2 s Konferenz (DE-588)4032055-8 s Bardeleben, H. J. edt Materials Science Forum 10 (DE-604)BV001902147 10 |
| spellingShingle | Proceedings of the 14th International Conference on Defects in Semiconductors ICDS-14 ; Paris, France, August 18-22, 1986 Materials Science Forum Kristallstruktur (DE-588)4136176-3 gnd Grenzfläche (DE-588)4021991-4 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd Verunreinigung (DE-588)4188107-2 gnd Diffusion (DE-588)4012277-3 gnd Gitterbaufehler (DE-588)4125030-8 gnd Konferenz (DE-588)4032055-8 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4136176-3 (DE-588)4021991-4 (DE-588)4062623-4 (DE-588)4137418-6 (DE-588)4188107-2 (DE-588)4012277-3 (DE-588)4125030-8 (DE-588)4032055-8 (DE-588)4022993-2 |
| title | Proceedings of the 14th International Conference on Defects in Semiconductors ICDS-14 ; Paris, France, August 18-22, 1986 |
| title_auth | Proceedings of the 14th International Conference on Defects in Semiconductors ICDS-14 ; Paris, France, August 18-22, 1986 |
| title_exact_search | Proceedings of the 14th International Conference on Defects in Semiconductors ICDS-14 ; Paris, France, August 18-22, 1986 |
| title_full | Proceedings of the 14th International Conference on Defects in Semiconductors ICDS-14 ; Paris, France, August 18-22, 1986 ed. by H. J. von Bardeleben |
| title_fullStr | Proceedings of the 14th International Conference on Defects in Semiconductors ICDS-14 ; Paris, France, August 18-22, 1986 ed. by H. J. von Bardeleben |
| title_full_unstemmed | Proceedings of the 14th International Conference on Defects in Semiconductors ICDS-14 ; Paris, France, August 18-22, 1986 ed. by H. J. von Bardeleben |
| title_short | Proceedings of the 14th International Conference on Defects in Semiconductors |
| title_sort | proceedings of the 14th international conference on defects in semiconductors icds 14 paris france august 18 22 1986 |
| title_sub | ICDS-14 ; Paris, France, August 18-22, 1986 |
| topic | Kristallstruktur (DE-588)4136176-3 gnd Grenzfläche (DE-588)4021991-4 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd Verunreinigung (DE-588)4188107-2 gnd Diffusion (DE-588)4012277-3 gnd Gitterbaufehler (DE-588)4125030-8 gnd Konferenz (DE-588)4032055-8 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Kristallstruktur Grenzfläche Verbindungshalbleiter Halbleiteroberfläche Verunreinigung Diffusion Gitterbaufehler Konferenz Halbleiter |
| volume_link | (DE-604)BV001902147 |
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