Amorphous semiconductors ' 76: proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976
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| Sprache: | English |
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1977
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| Beschreibung: | 565 S. |
| ISBN: | 9630512726 |
Internformat
MARC
| LEADER | 00000nam a22000002c 4500 | ||
|---|---|---|---|
| 001 | BV024982536 | ||
| 003 | DE-604 | ||
| 005 | 20130418 | ||
| 007 | t | ||
| 008 | 100417s1977 |||| 00||| eng d | ||
| 020 | |a 9630512726 |9 963-05-1272-6 | ||
| 035 | |a (OCoLC)832504277 | ||
| 035 | |a (DE-599)BVBBV024982536 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-11 |a DE-188 | ||
| 084 | |a UP 3100 |0 (DE-625)146372: |2 rvk | ||
| 245 | 1 | 0 | |a Amorphous semiconductors ' 76 |b proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976 |c ed. by I. Kósa Somogyi |
| 264 | 1 | |a Budapest |b Akad. Kiadó |c 1977 | |
| 300 | |a 565 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Amorpher Halbleiter |0 (DE-588)4001756-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Amorpher Halbleiter |0 (DE-588)4001756-4 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 1 | |5 DE-604 | |
| 700 | 1 | |a Kosa Somogyi, I. |e Sonstige |4 oth | |
| 711 | 2 | |a International Conference Amorphous Semiconductors |d 1976 |c Balatonfüred |j Sonstige |0 (DE-588)817898-7 |4 oth | |
| 856 | 4 | 2 | |m GBV Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=019649233&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-019649233 | ||
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| _version_ | 1804142013499572224 |
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| adam_text | AMORPHOUS SEMICONDUCTORS 76 PROCEEDINGS OF THE INTERNATIONAL CONFERENCE
BALATONFUERED, HUNGARY, 20-25 SEPTEMBER 1976// EDITED BY I. KOSA SOMOGYI
UNIVERSITATSBIBUOTHEK HANNOVER TECHNISCHE INFORMATIONSBLBUATHEK
AKADEMIAI KIADO . BUDAPEST 1977 CONTENTS PREFACE H SWITCHING K. D.
TSENDIN, E. A. LEBEDEV, B. L. GELMOND AND B. T. KOLOMETS,
ELECTRO-THERMAL SWITCHING INCLUDING CURRENT FILAMENT FORMATION 13 E.
VATEVA, N. BALTCHEV, I. GEORGIEVA AND N. KOPARANOVA, THRESHOLD AND
MEMORY SWITCHING IN THIN AMORPHOUS FLLMS OF EVAPORATED SIO WITH TWO AL
ELECTRODES .... 19 E. KISS AND T. SZOERENYI, THRESHOLD AND MEMORY SWITCH
IN VANADIUM PHOSPHATE GLASSES 25 N. ALIMBARASHVILI, M. BRODZELI, G.
DEKANOZISHVIU, I. EUOULASHVILI, N. SALUKVADZE AND G. TSITSISHVILI, GLASS
FORMATION AND MEMORY EFFECTS IN THE GLASSES OF SYSTEM WO,-MNO-P,OS 29
DEVICES V. G. TSUKERMAN, PECULIARITIES OFRECORDING OF OPTICALINFORMATION
IN CHALCOGENIDE VITREOUS SEMICONDUCTORS 35 V. P. KORONKEVICH,V. G.
REMESNIK,V. A.FATEEV ANDV. G.TSUKERMAN,THEUSAGEOF CHAL COGENIDE FILMS
FOR PRODUCING KINOFORM OPTICAL ELEMENTS AND ELEMENTS OF INTEGRATED
OPTICS 41 R. ANDREICHIN, M. BAEVA, L. YURUKOVA AND D. ARSOVA, A
CHALCOGENIDE GLASS OPTRONIC RECEIVER WITH A SIMULTANEOUS DIRECT AND
MEMORY EFLFECT 47 M. T. KOSTYSHIN, P. F. ROMANENKO AND N. G. KHOTYNENKO,
NEW PHOTOGRAPHIC MATERIALS * CHALCOGENIDE SEMICONDUCTOR * METAL LIGHT
SENSITIVE SYSTEMS WITH THE BARRIER LAYER 53 THEORY L. STOURAOE,A RELATION
BETWEENTHEENERGYGAP ANDTHEATOMIZATION ENTHALPY OFTHE COVALENT- LY BONDED
SEMICONDUCTING CD*AS GLASSES 61 P. THOMAS, STRUCTURAL ASPECTS IN THE
INTERPRETATION OF ELECTRICAL TRANSPORT DATA OF EVAPORATED AMORPHOUS GE
AND SI 65 H. BOETTGERAND V. V.BRYKSIN,THEORETICAL INVESTIGATION OF THE
FREQUENCY DEPENDENCEOF THE HOPPING CONDUCTIVITY * 71 H.-U. TSCHIRNER
AND M.WOBST, SOMEREMARKS ON THEUSEOFAN EFFECTIVE-MEDIUMTHEORY FOR THE
EXPLANATION OF TRANSPORT PROPERTIES IN BINARY LIQUID ALLOYS 77 B. ESSER
AND P. KLEINERT, ON THE THEORY OF THE TERNPERATURE DEPENDENCE OF
ABSORPTION EDGES IN DISORDERED SEMICONDUCTORS 83 R. SCHUCHARDTAND R.
KEIPER, ON THETHEORY OFPHOTON- AND ULTRASONIC-INDUCED D. C. HOP PING
CONDUCTIVITY IN DISORDERED SEMICONDUCTORS 89 EFFECT OF DOPING AND
IMPURITIES P. SUEPTTTZ, ATOMIC TRANSPORT IN AMORPHOUS SEMICONDUCTORS 95
M. T. KOSTYSHIN, THE CONNECTION OF THE RATE OF PHOTOCHCMICAL
TRANSFORMATIONS AND THE DIFFUSION COEFBCIENT IN METAL/SEMICONDUCTOR
SYSTEMS 111 M. MATYAS, CHALCOGENIDE GLASSES DOPED WITH TRANSITION
ELEMENTS 117 B. I. BOLTAKS, T. D. DZHAFAROV, B. H. KUDOYAROVA, Z.
U.BORISOVAANDA.A. OBRASTSOV, DIFFUSION, ELECTRIC TRANSPORT AND EFFECT OF
THE FIRST GROUP IMPURITIES ON THE PROPERTIES OF GLASSY AS2S3 123 D.
LEZAL AND I. SRB, THE BUILD-IN MECHANISM OF IMPURITIES INTO THE
GLASSYAS2SE3 .... 127 V. TRNOVCOVA, D. LEZAL, E. MARIANI AND M.
PAVLIKOVA, INFLUENCE OF OXYGEN ADDED IN DIFFERENT CHEMICAL FORMS ON
PHYSICAL PROPERTIES OF VITREOUS ASTSE3 133 W. HENRION,
INFLUENCEOFIMPURITIES ON THE OPTICAL PROPERTIES OF GLASSY ASJSE3 139 E.
SKORDEVA, R. ANDREICHIN, M. NIKIFOROVA, B. KOLOMIETS AND T. MAZETS, ON
THE IN FLUENCE OF AG, CU, SN, GE ON SOME PROPERTIES OF VITREOUS AS,S3
145 OPTICAL PROPERTIES I B. VELICKY, OPTICAL TRANSITIONS AND ELECTRONIC
STRUCTUREOF CHALCOGENIDE GLASSES 151 A. M. ANDRIESH AND D. I. TSIUELYANU,
A STUDY OFTHE ELECTRICAL FIELD INFLUENCEON THE OPTICAL PARAMETERS OF THE
METAL/CHALCOGENIDE VITREOUS SEMICONDUCTOR/METAL STRUCTURES ... 165 V. A.
VASILYEV, T. N. MAMONTOVA AND B. T. KOLOMIETS, THE INFLUENCE OI DOPING
ON PHOTOLUMINESCENCE OF VITREOUS AS2S3 171 I. S.ISHLIMAK AND R.
RENTZSCH, FEATURES OF PHOTOLUMINESCENCE OFCHARGE CARRIERS LOCALIZED IN
TAILS OF THE DENSITY OF STATES 177 B. T. KOLOMJBTS AND E. M. RASPOPOVA,
SHIFT OF OPTICAL ABSORPTION EDGE AT DENSIFICATION OF AS*SE SYSTEM
GLASSES 183 V. A. VASILYEV, S. K. PAVLOV AND B. T. KOLOMIETS, THE
PHOTOSTIMULATCD LIGHT ABSORPTION IN VITREOUS AS,SEA AND AS,S3 189 M. T.
KOSTYSHIN AND O. P. KASYARUM, THE OPTICAL CONSTANTS CHANGES OF AMORPHOUS
AS,SA FILMS BY ILLUMINATION 195 ELECTRICAL PROPERTIES I P. MUELLER,
INVESTIGATION OF AMORPHOUS SEMICONDUCTORS BY DIELECTRIC RELAXATION
CURRENT MEASUREMENTS 199 J. GAZSO, FREQUENCY RESPONSE MEASUREMENT ON
THIN CHALCOGENIDE FILMS 215 G. JUSKA AND S. VENORIS, SURFACE PROPERTIES
OF AMORPHOUS SELENIUM 221 G. ZENTAI AND J. HAJTO, A.C. MEASUREMENTS ON
AS-SE*TE SAMPLES 227 P. BURY AND J. OEUROEK, PRESSURE DEPENDENCE OF AC
CONDUCTIVITY IN AMORPHOUS SE AND SE-GE SYSTEM 233 G. ZUTHBR, THE
BEHAVIOR OF AL*AMORPHOUS SIO-AL STRUCTURES AT VERY LOW FREQUENCLES . 239
J. KOOEKA AND J. KJUSTOFIK, FREQUENCY PROPERTIES OF CDAS, BASED GLASSES
245 V. L. VANINOV AND S. K. NOVOSYOLOV, ELECTRICAL PROPERTIES OF GLASSES
IN THE SYSTEM AS-TE-CU 251 OPTICAL PROPERTIES II W. HENRION, OPTICAL
PROPERTIES OF PSEUDOBINARY ARSENIC CHALCOGENIDE GLASSES ..... 255 M,
ZAVETOVA AND A. HRUBY, OPTICAL PROPERTIES OF SEMICONDUCTING AMORPHOUS
T1S, . . 261 A. VASKO AND J. VONDRICH, OPTICAL PROPERTIES OF GLASSY
AS,SE3 IN THE WHOLE INFRARED . . 265 6 M. FRUMAR, L. KOUDEUCA, H. TICHA,
J. FAIMON AND L. TICHY, SOME PHYSICA! PROPERTIES OF GE*BI*S SYSTEM
GLASSES 271 F. KOSEK, Z. CTMPL AND J. CHLEBNY, OPTICAL AND MAGNETIC
PROPERTIES OF AS-S-TL AND AS*S*TE SYSTEMS 277 ELECTRICAL PROPERTIES II
E. MONTRIMAS, INVESTIGATION OF ELECTRIC AND PHOTOELECTRIC PROPERTIES OF
AMORPHOUS SEMI CONDUCTORS IN IONIC CONTACT REGIME 281 B. PETRETIS AND
A. V. KARALIUNEC, THE DEPENDENCE OF PROPERTIES OFEVAPORATED SELENIUM
LAYERS ON THE CONDITIONS OF THERMAL TREATMENT OF INITIAL MATERIAI 295 A.
M. ANDRIESH, M. S. IOVU, E. P. KOLOMEYKO, M. R. CHERNII AND S. D.
SHUTOV, AN INVESTIGATION OF THE LONG-TERM PHOTOCONDUCTIVITY RELAXATION
IN ASTS, BASED VITREOUS SEMICONDUCTING MATERIALS 301 A. SUELI, L.
MICHAILOVITS AND I. HEVESI, PHOTOCONDUCTIVITY OF THE VJOS-NSI SYSTEM . .
307 V. M. LYUBIN, V. L. AVERJANOV, B. T. KOLOMIETS, M. A. TAGIRDZHANOV,
L. VESCANAND P. DOUBRAVA, PHOTOSTIMULATED CHANGES IN THE OPTICAL AND
ELECTRICAL PROPERTIES DF AS*SE FILMS 313 T. SEBESTYEN, MODEL OF A
POSSIBLE CLASS OF OHMIC CONTACTS TO SEMICONDUCTORS BASED ON A GRADED
AMORPHOUS -CRYSTALLINE JUNCTION 321 F. SCHAUER, NON-STEADY-STATE
BEHAVIOUR OF INTERFACE STATES IN SYSTEMS WITH DISORDERED ASJSE3 FILMS
327 M. P. LISITSA, U. NASIROV, I. D. TURJANITSA AND I. V. FEKESHQAZI,
NONLINEAR LIGHTABSORP TION IN CRYSTALLINE AND VITREOUS SBSI 333 M. P.
LISITSA, U. NASIROV AND I. V. FEKESHGAZI, NONLINEAR LIGHT ABSORPTION IN
CRYSTALLINE AND VITREOUS ARSENIC TRISULPHIDE 337 G. JUSKA AND S.
VENORIS, HOLE DIFFUSION IN AMORPHOUS SELENIUM 343 STRUCTURAL
TRANSFORMATIONS Z. U. BORISOVA, M. D. MIKHAILOV AND T. S. RYKOVA,
STRUCTURAL CHANGES OF GLASSES UNDER THE ACTION OF ELECTRIC FIELD 349 V.
V. KORSAKOV AND V. G. TSUKERMAN, PHOTOELECTROCHEMICAL PROCESS IN THE
STRUCTURE OF METAL*AMORPHOUS SEMICONDUCTOR*METAL LAYERS 355 V. E.
KARNATOVSKI AND V. G. TSUKERMAN, TEMPERATURE INVESTIGATIONS OF
PHOTOSTRUCTURAL TRANSFORMATIONS IN AS*S SYSTEM 361 S. K. NOVOSYOLOVAND
O.A.YAKOVUK, VARIATION OF ELECTRIC AND PHOTOELECTRIC PROPERTIES OF
AS-SE*CU SYSTEM AMORPHOUS FILMS AT PHOTOSTRUCTURAL TRANSFORMATIONS 367
J. HAJTOAND G. ZENTAI, KINETICS OF LASER INDUCED CRYSTALLIZATION ON
AS*SE*TE THIN FILMS 371 R. ANDREICHIN, M. NIKIFOROVAAND P. IVANOVA,
PHOTO-DECOMPOSITION AND PHOTOSTRUCTURAL CHANGES IN VITREOUS ARSENIC
SULPHIDE AND ARSENIC SELENIDE FILMS 377 A. F. SHELKOVA, S. A.
TAURAJITENE AND G. Z. VINOGRADOVA, CRYSTALLIZATION OF AS,SE, VIT REOUS
FILMS STIMULATED BY ORGANIC SUBSTANCES 383 ELECTRICAL PROPERTIES III R.
ANDREICHIN, PHOTOPOLARIZATION AND PHOTOVOLTAIC EFFECTS IN THE HIGH
RESISTANCE VITREOUS SEMICONDUCTOR ARSENIC SULPHIDE 389 A. KOTTWITZ, F,
LEIMER AND H. STOETZEL, CHARACTERIZATION OF BLOCKING METAL CONTACTS ON
AMORPHOUSGESE FILMS 41 M. I. KORSUNSKY, SH. SH. SARSEMBINOV AND E. E.
ABDULGAFAROV, THE INVESTIGATION OF THE PHOTOELCCTROMOTIVE FORCE IN
VITREOUS TL3TEAS2TEA AND TL,SEAS,TE, 407 7 M. I. KORSUNSKY, S. YA.
MAKSIMOVA AND SH. SH. SARSEMBINOV,.THE INVESTIGATION OF THE CONTACT
POTENTIAL DISTRIBUTION AND PHOTO EMF IN THE METAL-THIN FILM OF AMORPHOUS
SELENIUM SYSTEM 411 J. KISPETER, STUDIES ON THE TRAP SPECTRUM IN
SELENIUM LAYERS 417 M. S. ABLOVA, A. A. ANDREYEV, B. T. MELEKH AND A. B.
PEVTSOV, PRODUCTION AND PROPER TIES OF ANTIMONY SUIFIDE GLASS 423 A.A.
ANDREYEV, M. S. ABLOVA, A. L. MANUKIAN, B.T. MELEKH, F. S. NASREDINOV
AND P. P. SEREGIN, PHYSICO-CHEMICAL, ELECTRICAL AND OPTICALPROPERTIES OF
GLASS SEMICONDUCTORS SI*GE*TE AND AS* SE OVER A WIDE RANGE OF
TEMPERATURES 429 L.ZDANOWICZ AND CZ.WGCLEWICZ, TRANSPORT
PROPERTIESOFAMORPHOUSCDAAS, FILMS . . . 437 STRUCTURE AND
CHARACTERIZATION OF MATERIALS A. BARNA, P. B. BARNA, GY. RADNOCZI, GY.
STARK AND P. THOMAS, REALIZATION OF THE THERMOELECTRIC POWER
MEASUREMENTS IN THE IN SITU ELECTRON MICROSCOPY 443 A. BARNA, I. NAGY,
GY. RADNOCZI, P. THOMAS AND L.TOTH, INVESTIGATION OF THE STRUCTURE OF
AMORPHOUS THIN FILMS PREPARED BY DIFFERENT METHODS 449 M.
MITKOVA-VASSILEVA AND Z. BONCHEVA-MLADENOVA, ON THE STRUCTURE OF GLASSES
OF THE GE*SE*GA AND GE*SE*IN SYSTEMS 455 A. P. CHERNOV, V. I. OLKHOVSKY
AND V. T. KAUNNIKOV, GLASS FORMATION IN THE SYSTEM IN-AS-SE-I 461 E.
MONTRIMAS AND B. PETRETIS, THE ORIGIN OF STRUCTURE INHOMOGENEITIES IN
EVAPORATED SELENIUM LAYERS 467 L. D. BOGOMOLOVA, A, N. BOGUSLAVSKY, I.
V. FILATOVA, V. A. JACHKIN, V. Z. PETROVA AND V. A. SHMUCLER, SOME
FEATURES OF THE STRUCTURE OF THE SEMICONDUCTING OXIDE GLASSES IN THE
VA-PJOI-MO SYSTEMS 471 O. KAPOSI, E. KESZEI AND L. MATUS, HIGH
TEMPERATURE MASS-SPECTROMETRIC STUDY OF THE VAPORIZATION OF THE GETE 477
L. CERVTNKA AND A. HRUBY, THE STRUCTURE OF AMORPHOUS T1S, 481 G. M.
ORLOVA, N. A. KOREPANOVA AND Z. U. BORISOVA, HEAT CAPACITY, THERMAL
EXPANSION AND ULTRASOUND PROPAGATION VELOCITY IN SBGE,SEY GLASSES WITH
CONSTANT ANTIMONY CON- TENT 487 V. I. DOTSENKO AND G. S. YURYEV, X-RAY
DIFFRACTION STUDY OF AMORPHOUS ARSENIC-SULPHIDE GLASS STRUCTURE . 491 J.
HAJTO AND T. KEMENY, THERMODYNAMIC PROPERTIES OF (ASSEJ^TE,,
CHALCOGENIDE GLASSES 493 D. LINKE, THERMOCHEMICAL AND STRUCTURAL
INTERPRETATION OF REACTIONS OCCURRING IN GLASS- FORMING CHALCOGENIDE
MELTS 499 ELECTRICAL PROPERTIES IV N. A. ROGACHBV, E. A,LEBEDEV AND B.
T. KOLOMIETS, THE LOCALIZED STATES AND CONDUCTIVITY OF VITREOUS
SEMICONDUCTORS IN HIGH ELECTRICAL FIELDS 505 V. SMID, THE CONTRIBUTION
TO THE STUDY OF FIELD-DEPENDENT ELECTRICAL CONDUCTIVITY OF GLASSY ASJTES
511 L. P. KAZAKOVA, E. A. LEBEDEV AND B. T. KOLOMIETS, THE HOLE DRIFT
MOBILITY OF VITREOUS AS3SE, 517 M. I. KORSUNSKY, SH. SH. SARSEMBINOV AND
E. E. ABDULGAFAROV, TEMPERATURE DEPENDENCE OF CONDUCTIVITY AND
THERMOELECTRIC POWER IN VITREOUS TLJTEAS,TE3 523 A. DEVENYI, G. KORONY,
G, LIVESCU, R. MANAILX, C RUSU, A. BARNA AND P. B. BARNA, ELECTRICAL
TRANSPORT AND THERMOPOWER IN MO/AMORPHOUS GE FILMS 527 8 T. BUDINAS, A.
JANKAUSKAS, P. MACKUS AND A. SMILGA, CHARGE TRANSPORT IN THE THIN LAYER
SYSTEM CDSETL,-ASISEJTL^ 533 T. SZOERENYI, E. KISS AND L. I. HORVATH, ON
THE ANOMALOUS CONDUCTIVITY IN VANADIUM PHOSPHATE GLASSES 539 M. I.
TOEROEK, CONTRIBUTIONS TO THE KINETICS OF CONDUCTION PROCESS IN SILICON
NITRIDE ... 545 T. TURSKI, J. JBDRZEJEWSKI AND B. KLEIN-SZYMANSKA,
INFLUENCE OF POLYMERIZATION METHOD ON THE DRIFT MOBILITY OF
PHOTOCARRIERS IN THE POLY-(N-VINYLCARBAZOIE) FILMS .... 549 AUTHOR INDEX
555 SUBJECT INDEX 559
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV024982536 |
| classification_rvk | UP 3100 |
| ctrlnum | (OCoLC)832504277 (DE-599)BVBBV024982536 |
| discipline | Physik |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01483nam a22003612c 4500</leader><controlfield tag="001">BV024982536</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20130418 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">100417s1977 |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9630512726</subfield><subfield code="9">963-05-1272-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)832504277</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV024982536</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-11</subfield><subfield code="a">DE-188</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3100</subfield><subfield code="0">(DE-625)146372:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Amorphous semiconductors ' 76</subfield><subfield code="b">proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976</subfield><subfield code="c">ed. by I. Kósa Somogyi</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Budapest</subfield><subfield code="b">Akad. Kiadó</subfield><subfield code="c">1977</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">565 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Amorpher Halbleiter</subfield><subfield code="0">(DE-588)4001756-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Amorpher Halbleiter</subfield><subfield code="0">(DE-588)4001756-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kosa Somogyi, I.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">International Conference Amorphous Semiconductors</subfield><subfield code="d">1976</subfield><subfield code="c">Balatonfüred</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)817898-7</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">GBV Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=019649233&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-019649233</subfield></datafield></record></collection> |
| id | DE-604.BV024982536 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T22:25:01Z |
| institution | BVB |
| institution_GND | (DE-588)817898-7 |
| isbn | 9630512726 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-019649233 |
| oclc_num | 832504277 |
| open_access_boolean | |
| owner | DE-11 DE-188 |
| owner_facet | DE-11 DE-188 |
| physical | 565 S. |
| publishDate | 1977 |
| publishDateSearch | 1977 |
| publishDateSort | 1977 |
| publisher | Akad. Kiadó |
| record_format | marc |
| spelling | Amorphous semiconductors ' 76 proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976 ed. by I. Kósa Somogyi Budapest Akad. Kiadó 1977 565 S. txt rdacontent n rdamedia nc rdacarrier Amorpher Halbleiter (DE-588)4001756-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Amorpher Halbleiter (DE-588)4001756-4 s DE-604 Halbleiter (DE-588)4022993-2 s Kosa Somogyi, I. Sonstige oth International Conference Amorphous Semiconductors 1976 Balatonfüred Sonstige (DE-588)817898-7 oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=019649233&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Amorphous semiconductors ' 76 proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976 Amorpher Halbleiter (DE-588)4001756-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4001756-4 (DE-588)4022993-2 |
| title | Amorphous semiconductors ' 76 proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976 |
| title_auth | Amorphous semiconductors ' 76 proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976 |
| title_exact_search | Amorphous semiconductors ' 76 proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976 |
| title_full | Amorphous semiconductors ' 76 proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976 ed. by I. Kósa Somogyi |
| title_fullStr | Amorphous semiconductors ' 76 proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976 ed. by I. Kósa Somogyi |
| title_full_unstemmed | Amorphous semiconductors ' 76 proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976 ed. by I. Kósa Somogyi |
| title_short | Amorphous semiconductors ' 76 |
| title_sort | amorphous semiconductors 76 proceedings of the international conference balatonfured hungary 20 25 september 1976 |
| title_sub | proceedings of the International Conference, Balatonfüred, Hungary, 20 - 25 September 1976 |
| topic | Amorpher Halbleiter (DE-588)4001756-4 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Amorpher Halbleiter Halbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=019649233&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT kosasomogyii amorphoussemiconductors76proceedingsoftheinternationalconferencebalatonfuredhungary2025september1976 AT internationalconferenceamorphoussemiconductorsbalatonfured amorphoussemiconductors76proceedingsoftheinternationalconferencebalatonfuredhungary2025september1976 |