Doping in III-V semiconductors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Cambridge
Univ. Press
1993
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| Schriftenreihe: | Cambridge studies in semiconductor physics and microelectronic engineering
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXII, 606 S. |
| ISBN: | 0521419190 |
Internformat
MARC
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Datensatz im Suchindex
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| adam_text | DOPING IN III-V SEMICONDUCTORS E. FRED SCHUBERT AT&T BELL LABORATORIES
ART H CAMBRIDGE UNIVERSITY PRESS CONTENTS FOREWORD PAGE XI PREFACE XV
LIST OF SYMBOLS XVIII INTRODUCTION 1 1. SHALLOW IMPURITIES 6 1.1
HYDROGENIC IMPURITIES 6 1.2 SCREENING OF IMPURITY POTENTIALS 27 1.3 HIGH
DOPING EFFECTS 34 2. PHENOMENOLOGY OF DEEP LEVELS 54 2.1 GENERAL
CHARACTERISTICS 55 2.2 CAPTURE, EMISSION, AND RECOMBINATION 60 2.3
EFFECTS RELATING TO EXPERIMENTAL PROPERTIES 67 3. SEMICONDUCTOR
STATISTICS 78 3.1 DENSITY OFCONTINUUM STATES 80 3.2 CLASSICAL AND
QUANTUM STATISTICS 94 3.3 CARRIER CONCENTRATIONS 118 3.4 LAWOF
MASSACTION 130 4. GROWTH TECHNOLOGIES 137 4.1 MOLECULAR-BEAM EPITAXY 137
4.2 GAS-SOURCE MOLECULAR-BEAM EPITAXY 146 4.3 CHEMICAL-BEAM EPITAXY 149
4.4 ORGANOMETALLIC VAPOR-PHASE EPITAXY 153 4.5 VAPOR-PHASE EPITAXY 161
5. DOPING WITH ELEMENTAL SOURCES 165 5.1 DOPING TECHNIQUES AND
CALIBRATION 165 5.2 DOPING HOMOGENEITY AND UNIFORMITY 177 5.3 ELEMENTAL
DOPANTS 181 IX X CONTENTS 6. GASEOUS DOPING SOURCES 208 6.1 GENERAL
CONSIDERATIONS 209 6.2 DOPING HOMOGENEITY AND UNIFORMITY 213 6.3 GASEOUS
DOPING PRECURSORS 219 7. IMPURITY CHARACTERISTICS 248 7.1 DOPING
INCORPORATION DURING GROWTH 249 7.2 DOPING INCORPORATION BY IMPLANTATION
262 7.3 DOPING INCORPORATION BY DIFFUSION 272 7.4 AMPHOTERICITY AND
AUTOCOMPENSATION 277 7.5 MAXIMUM DOPING CONCENTRATION 290 8.
REDISTRIBUTION OF IMPURITIES 306 8.1 DIFFUSION AND BROWNIAN MOTION 307
8.2 FICKIAN DIFFUSION 311 8.3 DIFFUSION MECHANISMS 316 8.4 SOME SPECIFIC
IMPURITIES 325 8.5 SURFACE SEGREGATIONS AND SURFACE MIGRATION 337 8.6
IMPURITY-INDUCED LAYER DISORDERING 349 9. DEEP CENTERS 354 9.1 DX-TYPE
CENTERS 355 9.2 THE EL2 DEFECT 365 9.3 HYDROGEN 374 9.4 CHROMIUM, IRON,
AND OXYGEN 384 9.5 RARE-EARTH IMPURITIES 390 10. DOPING IN
HETEROSTRUCTURES, QUANTUM WELLS, AND SUPERLATTICES 392 10.1 SELECTIVELY
DOPED HETEROSTRUCTURES 392 10.2 DOPING ASPECTS OF SELECTIVELY DOPED
HETEROSTRUCTURES 404 10.3 DOPING SUPERLATTICES 412 10.4 IMPURITIES IN
QUANTUM WELLS AND QUANTUM BARRIERS 422 11. DELTA DOPING 433 11.1
ELECTRONIC STRUCTURE 434 11.2 GROWTH, LOCALIZATION, AND REDISTRIBUTION
446 11.3 TRANSPORT PROPERTIES 458 11.4 ELECTRONIC DEVICES 463 11.5
OPTICAL DEVICES 471 12. CHARACTERIZATION TECHNIQUES 482 12.1 ELECTRONIC
CHARACTERIZATION TECHNIQUES 482 12.2 OPTICAL CHARACTERIZATION TECHNIQUES
508 12.3 CHEMICAL AND STRUCTURAL CHARACTERIZATION TECHNIQUES 531
APPENDIX A : PROPERTIES OF III-V SEMICONDUCTORS 541 APPENDIXB: CONSTANTS
AND CONVERSIONS 545 REFERENCES 546 INDEX 600
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| bvnumber | BV024978337 |
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| illustrated | Not Illustrated |
| indexdate | 2024-07-09T22:24:56Z |
| institution | BVB |
| isbn | 0521419190 |
| language | English |
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| physical | XXII, 606 S. |
| publishDate | 1993 |
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| series2 | Cambridge studies in semiconductor physics and microelectronic engineering |
| spelling | Schubert, E. Fred Verfasser aut Doping in III-V semiconductors E. Fred Schubert Cambridge Univ. Press 1993 XXII, 606 S. txt rdacontent n rdamedia nc rdacarrier Cambridge studies in semiconductor physics and microelectronic engineering Dotierung (DE-588)4130672-7 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s Dotierung (DE-588)4130672-7 s DE-604 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=019645404&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Schubert, E. Fred Doping in III-V semiconductors Dotierung (DE-588)4130672-7 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4130672-7 (DE-588)4150649-2 |
| title | Doping in III-V semiconductors |
| title_auth | Doping in III-V semiconductors |
| title_exact_search | Doping in III-V semiconductors |
| title_full | Doping in III-V semiconductors E. Fred Schubert |
| title_fullStr | Doping in III-V semiconductors E. Fred Schubert |
| title_full_unstemmed | Doping in III-V semiconductors E. Fred Schubert |
| title_short | Doping in III-V semiconductors |
| title_sort | doping in iii v semiconductors |
| topic | Dotierung (DE-588)4130672-7 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Dotierung Drei-Fünf-Halbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=019645404&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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