Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
1999
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| Schlagworte: | |
| Beschreibung: | VIII, 108 S. Ill., graph. Darst. |
Internformat
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| 245 | 1 | 0 | |a Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy |c von Jochen R. Müllhäuser |
| 264 | 1 | |c 1999 | |
| 300 | |a VIII, 108 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
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| 502 | |a Berlin, Humboldt-Univ., Diss., 1999 | ||
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Datensatz im Suchindex
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| author | Müllhäuser, Jochen R. 1967- |
| author_GND | (DE-588)121694526 |
| author_facet | Müllhäuser, Jochen R. 1967- |
| author_role | aut |
| author_sort | Müllhäuser, Jochen R. 1967- |
| author_variant | j r m jr jrm |
| building | Verbundindex |
| bvnumber | BV024865685 |
| classification_rvk | UP 3150 UP 7550 |
| ctrlnum | (OCoLC)916708287 (DE-599)BVBBV024865685 |
| discipline | Physik |
| format | Thesis Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV024865685 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T22:22:41Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-019540522 |
| oclc_num | 916708287 |
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| owner | DE-11 |
| owner_facet | DE-11 |
| physical | VIII, 108 S. Ill., graph. Darst. |
| publishDate | 1999 |
| publishDateSearch | 1999 |
| publishDateSort | 1999 |
| record_format | marc |
| spelling | Müllhäuser, Jochen R. 1967- Verfasser (DE-588)121694526 aut Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy von Jochen R. Müllhäuser 1999 VIII, 108 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berlin, Humboldt-Univ., Diss., 1999 Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf Aluminiumnitrid (DE-588)4226770-5 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Zinkblendestruktur (DE-588)4270248-3 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Indiumnitrid (DE-588)4460230-3 gnd rswk-swf Photolumineszenz (DE-588)4174517-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumnitrid (DE-588)4375592-6 s Zinkblendestruktur (DE-588)4270248-3 s Molekularstrahlepitaxie (DE-588)4170399-6 s Photolumineszenz (DE-588)4174517-6 s DE-604 Aluminiumnitrid (DE-588)4226770-5 s Indiumnitrid (DE-588)4460230-3 s Mischkristall (DE-588)4170112-4 s Heterostruktur (DE-588)4123378-5 s |
| spellingShingle | Müllhäuser, Jochen R. 1967- Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy Galliumnitrid (DE-588)4375592-6 gnd Mischkristall (DE-588)4170112-4 gnd Aluminiumnitrid (DE-588)4226770-5 gnd Heterostruktur (DE-588)4123378-5 gnd Zinkblendestruktur (DE-588)4270248-3 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Indiumnitrid (DE-588)4460230-3 gnd Photolumineszenz (DE-588)4174517-6 gnd |
| subject_GND | (DE-588)4375592-6 (DE-588)4170112-4 (DE-588)4226770-5 (DE-588)4123378-5 (DE-588)4270248-3 (DE-588)4170399-6 (DE-588)4460230-3 (DE-588)4174517-6 (DE-588)4113937-9 |
| title | Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy |
| title_auth | Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy |
| title_exact_search | Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy |
| title_full | Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy von Jochen R. Müllhäuser |
| title_fullStr | Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy von Jochen R. Müllhäuser |
| title_full_unstemmed | Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy von Jochen R. Müllhäuser |
| title_short | Properties of zincblende GaN and (In, Ga, Al) N heterostructures grown by molecular beam epitaxy |
| title_sort | properties of zincblende gan and in ga al n heterostructures grown by molecular beam epitaxy |
| topic | Galliumnitrid (DE-588)4375592-6 gnd Mischkristall (DE-588)4170112-4 gnd Aluminiumnitrid (DE-588)4226770-5 gnd Heterostruktur (DE-588)4123378-5 gnd Zinkblendestruktur (DE-588)4270248-3 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Indiumnitrid (DE-588)4460230-3 gnd Photolumineszenz (DE-588)4174517-6 gnd |
| topic_facet | Galliumnitrid Mischkristall Aluminiumnitrid Heterostruktur Zinkblendestruktur Molekularstrahlepitaxie Indiumnitrid Photolumineszenz Hochschulschrift |
| work_keys_str_mv | AT mullhauserjochenr propertiesofzincblendeganandingaalnheterostructuresgrownbymolecularbeamepitaxy |