Semiconductor Silicon Crystal Technology:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
San Diego <<[u.a.]>>
Acad. Pr.
1989
|
| Schlagworte: | |
| Beschreibung: | VIII, 426 S. Ill., graph. Darst. |
| ISBN: | 0126400458 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV024690302 | ||
| 003 | DE-604 | ||
| 005 | 20090910 | ||
| 007 | t | ||
| 008 | 090924s1989 ad|| |||| 00||| und d | ||
| 020 | |a 0126400458 |9 0-12-640045-8 | ||
| 035 | |a (OCoLC)610760070 | ||
| 035 | |a (DE-599)BVBBV024690302 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | |a und | ||
| 049 | |a DE-83 | ||
| 084 | |a UP 3100 |0 (DE-625)146372: |2 rvk | ||
| 084 | |a UP 3160 |0 (DE-625)146378: |2 rvk | ||
| 100 | 1 | |a Shimura, Fumio |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Semiconductor Silicon Crystal Technology |c Fumio Shimura |
| 264 | 1 | |a San Diego <<[u.a.]>> |b Acad. Pr. |c 1989 | |
| 300 | |a VIII, 426 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Halbleiterwerkstoff |0 (DE-588)4158817-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kristall |0 (DE-588)4033209-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Einkristall |0 (DE-588)4013901-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumhalbleiter |0 (DE-588)4274465-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 2 | |a Kristall |0 (DE-588)4033209-3 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiterwerkstoff |0 (DE-588)4158817-4 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 2 | 1 | |a Einkristall |0 (DE-588)4013901-3 |D s |
| 689 | 2 | |5 DE-604 | |
| 689 | 3 | 0 | |a Siliciumhalbleiter |0 (DE-588)4274465-9 |D s |
| 689 | 3 | 1 | |a Kristall |0 (DE-588)4033209-3 |D s |
| 689 | 3 | |5 DE-604 | |
| 689 | 4 | 0 | |a Siliciumhalbleiter |0 (DE-588)4274465-9 |D s |
| 689 | 4 | |5 DE-604 | |
| 940 | 1 | |q TUB-nve | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-018101177 | ||
Datensatz im Suchindex
| _version_ | 1804140102957400064 |
|---|---|
| any_adam_object | |
| author | Shimura, Fumio |
| author_facet | Shimura, Fumio |
| author_role | aut |
| author_sort | Shimura, Fumio |
| author_variant | f s fs |
| building | Verbundindex |
| bvnumber | BV024690302 |
| classification_rvk | UP 3100 UP 3160 |
| ctrlnum | (OCoLC)610760070 (DE-599)BVBBV024690302 |
| discipline | Physik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01815nam a2200529 c 4500</leader><controlfield tag="001">BV024690302</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20090910 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">090924s1989 ad|| |||| 00||| und d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0126400458</subfield><subfield code="9">0-12-640045-8</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)610760070</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV024690302</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">und</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-83</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3100</subfield><subfield code="0">(DE-625)146372:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3160</subfield><subfield code="0">(DE-625)146378:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Shimura, Fumio</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Semiconductor Silicon Crystal Technology</subfield><subfield code="c">Fumio Shimura</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">San Diego <<[u.a.]>></subfield><subfield code="b">Acad. Pr.</subfield><subfield code="c">1989</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VIII, 426 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterwerkstoff</subfield><subfield code="0">(DE-588)4158817-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kristall</subfield><subfield code="0">(DE-588)4033209-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Einkristall</subfield><subfield code="0">(DE-588)4013901-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumhalbleiter</subfield><subfield code="0">(DE-588)4274465-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Kristall</subfield><subfield code="0">(DE-588)4033209-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiterwerkstoff</subfield><subfield code="0">(DE-588)4158817-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">Einkristall</subfield><subfield code="0">(DE-588)4013901-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Siliciumhalbleiter</subfield><subfield code="0">(DE-588)4274465-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2="1"><subfield code="a">Kristall</subfield><subfield code="0">(DE-588)4033209-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">Siliciumhalbleiter</subfield><subfield code="0">(DE-588)4274465-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">TUB-nve</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-018101177</subfield></datafield></record></collection> |
| id | DE-604.BV024690302 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:54:39Z |
| institution | BVB |
| isbn | 0126400458 |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-018101177 |
| oclc_num | 610760070 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | VIII, 426 S. Ill., graph. Darst. |
| psigel | TUB-nve |
| publishDate | 1989 |
| publishDateSearch | 1989 |
| publishDateSort | 1989 |
| publisher | Acad. Pr. |
| record_format | marc |
| spelling | Shimura, Fumio Verfasser aut Semiconductor Silicon Crystal Technology Fumio Shimura San Diego <<[u.a.]>> Acad. Pr. 1989 VIII, 426 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Halbleiterwerkstoff (DE-588)4158817-4 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Kristall (DE-588)4033209-3 gnd rswk-swf Einkristall (DE-588)4013901-3 gnd rswk-swf Siliciumhalbleiter (DE-588)4274465-9 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 s Silicium (DE-588)4077445-4 s Kristall (DE-588)4033209-3 s DE-604 Halbleiterwerkstoff (DE-588)4158817-4 s Einkristall (DE-588)4013901-3 s Siliciumhalbleiter (DE-588)4274465-9 s |
| spellingShingle | Shimura, Fumio Semiconductor Silicon Crystal Technology Halbleiterwerkstoff (DE-588)4158817-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Kristall (DE-588)4033209-3 gnd Einkristall (DE-588)4013901-3 gnd Siliciumhalbleiter (DE-588)4274465-9 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4158817-4 (DE-588)4158814-9 (DE-588)4033209-3 (DE-588)4013901-3 (DE-588)4274465-9 (DE-588)4077445-4 |
| title | Semiconductor Silicon Crystal Technology |
| title_auth | Semiconductor Silicon Crystal Technology |
| title_exact_search | Semiconductor Silicon Crystal Technology |
| title_full | Semiconductor Silicon Crystal Technology Fumio Shimura |
| title_fullStr | Semiconductor Silicon Crystal Technology Fumio Shimura |
| title_full_unstemmed | Semiconductor Silicon Crystal Technology Fumio Shimura |
| title_short | Semiconductor Silicon Crystal Technology |
| title_sort | semiconductor silicon crystal technology |
| topic | Halbleiterwerkstoff (DE-588)4158817-4 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Kristall (DE-588)4033209-3 gnd Einkristall (DE-588)4013901-3 gnd Siliciumhalbleiter (DE-588)4274465-9 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Halbleiterwerkstoff Halbleitertechnologie Kristall Einkristall Siliciumhalbleiter Silicium |
| work_keys_str_mv | AT shimurafumio semiconductorsiliconcrystaltechnology |