InGaAs Field-Effect Transistors:
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Buch |
Sprache: | Undetermined |
Veröffentlicht: |
Taunton
Research Studies Press <<[u.a.]>>
1989
|
Schriftenreihe: | Electronic & electrical engineering research studies : III-V compound technology series
no. 1 |
Schlagworte: | |
Beschreibung: | XIV, 218 S. |
ISBN: | 0863800831 0471923621 |
Internformat
MARC
LEADER | 00000nam a2200000 cb4500 | ||
---|---|---|---|
001 | BV024674744 | ||
003 | DE-604 | ||
005 | 20090910 | ||
007 | t | ||
008 | 090924s1989 |||| 00||| und d | ||
020 | |a 0863800831 |9 0-86380-083-1 | ||
020 | |a 0471923621 |9 0-471-92362-1 | ||
035 | |a (OCoLC)635846871 | ||
035 | |a (DE-599)BVBBV024674744 | ||
040 | |a DE-604 |b ger |e rakwb | ||
041 | |a und | ||
049 | |a DE-83 | ||
100 | 1 | |a Heime, Klaus |e Verfasser |4 aut | |
245 | 1 | 0 | |a InGaAs Field-Effect Transistors |
264 | 1 | |a Taunton |b Research Studies Press <<[u.a.]>> |c 1989 | |
300 | |a XIV, 218 S. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a Electronic & electrical engineering research studies : III-V compound technology series |v no. 1 | |
650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Mischkristall |0 (DE-588)4170112-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Indiumarsenid |0 (DE-588)4249718-8 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Galliumarsenid |0 (DE-588)4019155-2 |D s |
689 | 0 | 1 | |a Indiumarsenid |0 (DE-588)4249718-8 |D s |
689 | 0 | 2 | |a Mischkristall |0 (DE-588)4170112-4 |D s |
689 | 0 | 3 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
689 | 0 | |5 DE-604 | |
940 | 1 | |q TUB-nve | |
999 | |a oai:aleph.bib-bvb.de:BVB01-018085725 |
Datensatz im Suchindex
_version_ | 1804140087569547264 |
---|---|
any_adam_object | |
author | Heime, Klaus |
author_facet | Heime, Klaus |
author_role | aut |
author_sort | Heime, Klaus |
author_variant | k h kh |
building | Verbundindex |
bvnumber | BV024674744 |
ctrlnum | (OCoLC)635846871 (DE-599)BVBBV024674744 |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01366nam a2200397 cb4500</leader><controlfield tag="001">BV024674744</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20090910 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">090924s1989 |||| 00||| und d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0863800831</subfield><subfield code="9">0-86380-083-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0471923621</subfield><subfield code="9">0-471-92362-1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)635846871</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV024674744</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">und</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-83</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Heime, Klaus</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">InGaAs Field-Effect Transistors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Taunton</subfield><subfield code="b">Research Studies Press <<[u.a.]>></subfield><subfield code="c">1989</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XIV, 218 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Electronic & electrical engineering research studies : III-V compound technology series</subfield><subfield code="v">no. 1</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Mischkristall</subfield><subfield code="0">(DE-588)4170112-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Indiumarsenid</subfield><subfield code="0">(DE-588)4249718-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Indiumarsenid</subfield><subfield code="0">(DE-588)4249718-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Mischkristall</subfield><subfield code="0">(DE-588)4170112-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Feldeffekttransistor</subfield><subfield code="0">(DE-588)4131472-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">TUB-nve</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-018085725</subfield></datafield></record></collection> |
id | DE-604.BV024674744 |
illustrated | Not Illustrated |
indexdate | 2024-07-09T21:54:24Z |
institution | BVB |
isbn | 0863800831 0471923621 |
language | Undetermined |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-018085725 |
oclc_num | 635846871 |
open_access_boolean | |
owner | DE-83 |
owner_facet | DE-83 |
physical | XIV, 218 S. |
psigel | TUB-nve |
publishDate | 1989 |
publishDateSearch | 1989 |
publishDateSort | 1989 |
publisher | Research Studies Press <<[u.a.]>> |
record_format | marc |
series2 | Electronic & electrical engineering research studies : III-V compound technology series |
spelling | Heime, Klaus Verfasser aut InGaAs Field-Effect Transistors Taunton Research Studies Press <<[u.a.]>> 1989 XIV, 218 S. txt rdacontent n rdamedia nc rdacarrier Electronic & electrical engineering research studies : III-V compound technology series no. 1 Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf Indiumarsenid (DE-588)4249718-8 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 s Indiumarsenid (DE-588)4249718-8 s Mischkristall (DE-588)4170112-4 s Feldeffekttransistor (DE-588)4131472-4 s DE-604 |
spellingShingle | Heime, Klaus InGaAs Field-Effect Transistors Galliumarsenid (DE-588)4019155-2 gnd Mischkristall (DE-588)4170112-4 gnd Indiumarsenid (DE-588)4249718-8 gnd Feldeffekttransistor (DE-588)4131472-4 gnd |
subject_GND | (DE-588)4019155-2 (DE-588)4170112-4 (DE-588)4249718-8 (DE-588)4131472-4 |
title | InGaAs Field-Effect Transistors |
title_auth | InGaAs Field-Effect Transistors |
title_exact_search | InGaAs Field-Effect Transistors |
title_full | InGaAs Field-Effect Transistors |
title_fullStr | InGaAs Field-Effect Transistors |
title_full_unstemmed | InGaAs Field-Effect Transistors |
title_short | InGaAs Field-Effect Transistors |
title_sort | ingaas field effect transistors |
topic | Galliumarsenid (DE-588)4019155-2 gnd Mischkristall (DE-588)4170112-4 gnd Indiumarsenid (DE-588)4249718-8 gnd Feldeffekttransistor (DE-588)4131472-4 gnd |
topic_facet | Galliumarsenid Mischkristall Indiumarsenid Feldeffekttransistor |
work_keys_str_mv | AT heimeklaus ingaasfieldeffecttransistors |