Deep centers in semiconductors: a state of the art approach
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
New York <<[u.a.]>>
Gordon and Breach
1986
|
| Schlagworte: | |
| Beschreibung: | XI, 777 S. graph. Darst., Tab. |
Internformat
MARC
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| 245 | 1 | 0 | |a Deep centers in semiconductors |b a state of the art approach |c ed. by Sokrates T. Pantelides |
| 264 | 1 | |a New York <<[u.a.]>> |b Gordon and Breach |c 1986 | |
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Datensatz im Suchindex
| _version_ | 1804140056250679296 |
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| author2 | Pantelides, Sokrates ca. 20./21. Jh |
| author2_role | edt |
| author2_variant | s p sp |
| author_GND | (DE-588)1131264401 |
| author_facet | Pantelides, Sokrates ca. 20./21. Jh |
| building | Verbundindex |
| bvnumber | BV024641635 |
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| discipline | Physik |
| format | Book |
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| id | DE-604.BV024641635 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:53:54Z |
| institution | BVB |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-018053508 |
| oclc_num | 246595896 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | XI, 777 S. graph. Darst., Tab. |
| publishDate | 1986 |
| publishDateSearch | 1986 |
| publishDateSort | 1986 |
| publisher | Gordon and Breach |
| record_format | marc |
| spelling | Deep centers in semiconductors a state of the art approach ed. by Sokrates T. Pantelides New York <<[u.a.]>> Gordon and Breach 1986 XI, 777 S. graph. Darst., Tab. txt rdacontent n rdamedia nc rdacarrier Tiefe Störstelle (DE-588)4185419-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Verunreinigung (DE-588)4188107-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Tiefe Störstelle (DE-588)4185419-6 s DE-604 Verunreinigung (DE-588)4188107-2 s Pantelides, Sokrates ca. 20./21. Jh. (DE-588)1131264401 edt |
| spellingShingle | Deep centers in semiconductors a state of the art approach Tiefe Störstelle (DE-588)4185419-6 gnd Halbleiter (DE-588)4022993-2 gnd Verunreinigung (DE-588)4188107-2 gnd |
| subject_GND | (DE-588)4185419-6 (DE-588)4022993-2 (DE-588)4188107-2 |
| title | Deep centers in semiconductors a state of the art approach |
| title_auth | Deep centers in semiconductors a state of the art approach |
| title_exact_search | Deep centers in semiconductors a state of the art approach |
| title_full | Deep centers in semiconductors a state of the art approach ed. by Sokrates T. Pantelides |
| title_fullStr | Deep centers in semiconductors a state of the art approach ed. by Sokrates T. Pantelides |
| title_full_unstemmed | Deep centers in semiconductors a state of the art approach ed. by Sokrates T. Pantelides |
| title_short | Deep centers in semiconductors |
| title_sort | deep centers in semiconductors a state of the art approach |
| title_sub | a state of the art approach |
| topic | Tiefe Störstelle (DE-588)4185419-6 gnd Halbleiter (DE-588)4022993-2 gnd Verunreinigung (DE-588)4188107-2 gnd |
| topic_facet | Tiefe Störstelle Halbleiter Verunreinigung |
| work_keys_str_mv | AT pantelidessokrates deepcentersinsemiconductorsastateoftheartapproach |