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008 | 090924s1980 ad|| |||| 00||| und d | ||
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245 | 1 | 0 | |a III-V Semiconductors |
246 | 1 | 3 | |a Three-five semiconductors |
264 | 1 | |a Berlin |b Springer |c 1980 | |
300 | |a 163 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a Crystals |v 3 | |
650 | 0 | 7 | |a Verbindungshalbleiter |0 (DE-588)4062623-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Kristallwachstum |0 (DE-588)4123579-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Molekularstrahlepitaxie |0 (DE-588)4170399-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Kristall |0 (DE-588)4033209-3 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Temperaturabhängigkeit |0 (DE-588)4203793-1 |2 gnd |9 rswk-swf |
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689 | 1 | |5 DE-604 | |
689 | 2 | 0 | |a Verbindungshalbleiter |0 (DE-588)4062623-4 |D s |
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940 | 1 | |q TUB-nse | |
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Datensatz im Suchindex
_version_ | 1804140606973280256 |
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any_adam_object | |
building | Verbundindex |
bvnumber | BV024593459 |
classification_rvk | UP 3100 UQ 1100 |
ctrlnum | (OCoLC)888749866 (DE-599)BVBBV024593459 |
discipline | Physik |
format | Book |
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id | DE-604.BV024593459 |
illustrated | Illustrated |
indexdate | 2024-07-09T22:02:40Z |
institution | BVB |
isbn | 3540099573 0387099573 |
language | Undetermined |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-018566814 |
oclc_num | 888749866 |
open_access_boolean | |
owner | DE-83 DE-11 |
owner_facet | DE-83 DE-11 |
physical | 163 S. Ill., graph. Darst. |
psigel | TUB-nse |
publishDate | 1980 |
publishDateSearch | 1980 |
publishDateSort | 1980 |
publisher | Springer |
record_format | marc |
series2 | Crystals |
spelling | III-V Semiconductors Three-five semiconductors Berlin Springer 1980 163 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Crystals 3 Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Kristall (DE-588)4033209-3 gnd rswk-swf Temperaturabhängigkeit (DE-588)4203793-1 gnd rswk-swf Kristallwachstum (DE-588)4123579-4 s DE-604 Kristall (DE-588)4033209-3 s Verbindungshalbleiter (DE-588)4062623-4 s Molekularstrahlepitaxie (DE-588)4170399-6 s Temperaturabhängigkeit (DE-588)4203793-1 s |
spellingShingle | III-V Semiconductors Verbindungshalbleiter (DE-588)4062623-4 gnd Kristallwachstum (DE-588)4123579-4 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Kristall (DE-588)4033209-3 gnd Temperaturabhängigkeit (DE-588)4203793-1 gnd |
subject_GND | (DE-588)4062623-4 (DE-588)4123579-4 (DE-588)4170399-6 (DE-588)4033209-3 (DE-588)4203793-1 |
title | III-V Semiconductors |
title_alt | Three-five semiconductors |
title_auth | III-V Semiconductors |
title_exact_search | III-V Semiconductors |
title_full | III-V Semiconductors |
title_fullStr | III-V Semiconductors |
title_full_unstemmed | III-V Semiconductors |
title_short | III-V Semiconductors |
title_sort | iii v semiconductors |
topic | Verbindungshalbleiter (DE-588)4062623-4 gnd Kristallwachstum (DE-588)4123579-4 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Kristall (DE-588)4033209-3 gnd Temperaturabhängigkeit (DE-588)4203793-1 gnd |
topic_facet | Verbindungshalbleiter Kristallwachstum Molekularstrahlepitaxie Kristall Temperaturabhängigkeit |