MMIC design, GaAs FETs and HEMTs:
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | Undetermined |
| Published: |
Boston <<[u.a.]>>
Artech House
1989
|
| Series: | The Artech House microwave library
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XXIII, 370 S. |
| ISBN: | 0890063141 |
Staff View
MARC
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Record in the Search Index
| _version_ | 1804140365973815296 |
|---|---|
| adam_text | ✓ 1
MMIC Design
GaAs FETsand HEMTs
Peter H Ladbrooke
Director, GaAs Code Ltd
Nachrichtentechnische Bibliothek
THD
Inv -Nr :
41 003 l*F
Artech House
Boston and London
Contents
Foreword xi
Acknowledgments xiii
Notes on nomenclature, acronyms and useful data xv
List of symbols xvii
Chapter 1 Introduction 1
1 1 Statement of the problem 1
1 2 Design approaches 2
13A simple example 4
1 4 Yield 7
1 5 The role of device physics 8
Chapter 2 MMIC types and chip functions 11
2 1 Scale of IC fabrication 11
2 2 Applications 12
221 Civil 12
222 Military 14
2 3 Chip functions 15
2 4 Example MMICs 17
Chapter 3 Overview of passive elements 29
3 1 Introduction 29
3 2 Microstripline 30
3 3 Inductors 34
3 4 Capacitors 41
3 5 Resistors 47
vii
3 6 The Lange coupler 49
3 7 Other components 50
3 8 Final remarks 52
Chapter 4 PIN and Schottky diodes 55
4 1 Introduction 55
4 2 Schottky diodes 56
4 3 PIN diodes 63
4 4 MMIC uses of PIN and Schottky diodes 67
Chapter 5 Elementary FET principles 69
5 1 Introduction 69
5 2 Review of Si JFET operation 70
5 3 Current saturation in the GaAs MESFET 77
5 4 Mechanism of current saturation—summary 82
5 5 Essential enhancements 83
551 Si JFET 83
552 GaAs MESFET 84
5 6 Equivalent circuit of the GaAs MESFET 85
5 7 Concluding remarks 87
Chapter 6 MESFETs 91
6 1 Introduction 91
6 2 Brief outline of structure 91
6 3 Equivalent circuit—physical basis 95
631 Signal delay 95
632 Charge storage 99
633 Current modulation 109
634 Transconductance delay 110
6 4 Intrinsic equivalent circuit 112
641 Configuration 112
642 Voltage dependence of the space-charge layer
extension, X 116
643 Gate strip inductance, i?g 121
644 Channel, or intrinsic, resistance, R{ 121
645 Channel current, ICH 121
646 Intrinsic transconductance, gm0 122
647 Gate-channel capacitance, Cgc 123
648 Gate-drain capacitance, Cgd 123
649 Transconductance delay, rgm 124
Implications for FET design and usage 124
viii
6 6 Output conductance and other microwave effects of substrate
current 125
6 7 Effect of surface charge, non-uniform doping and gate recess
depth 135
6 8 Series parasitic resistances Rs and Rd and effect on equivalent 138
circuit
681 Source resistance, Rs 139
682 Drain resistances, RD and Rd 142
6 9 Gate resistance 145
6 10 Geometric capacitance 146
6 11 Via-hole inductance 155
6 12 GaAs FET noise 156
6 13 Power MMICs 163
Chapter 7 High electron mobility transistors 189
7 1 Introduction 189
7 2 Energy band line-up 190
7 3 Physical basis and structure 192
7 4 Practical HEMT structures 196
7 5 Principal equivalent circuit elements 198
7 6 HEMT noise 201
7 7 Prospects for HEMT integration 202
Chapter 8 Reverse modeling GaAs MESFETs and HEMTs 205
8 1 Introduction 205
8 2 Reverse modeling for gate length 205
8 3 Errors in eqns (8 2) and (8 6) 211
8 4 Extension to HEMTs 211
8 5 General comments 215
8 6 Reverse modeling for channel doping 218
8 7 Conclusion 219
Chapter 9 Design limits 221
9 1 Introduction 221
9 2 Limits to small-signal behavior 222
921 Gain, frequency and voltage, and gate length 222
922 Effect of gatewidth, ZG 225
923 Input and output reflection coefficient 232
924 Maximum Tunable Gain (MTG), MAG, MSG and
MUG 242
9 3 Limits to large-signal (power) behavior 248
ix
Chapter 10 FETs in amplifiers 259
10 1 Introduction 259
10 2 Amplifier topologies and design principles 261
10 2 1 Reactively matched amplifiers 263
10 2 2 Design of a two-element matching or gain slope
compensation network 268
10 2 3 Lossy matched amplifiers 277
10 2 4 Feedback amplifiers 279
10 2 5 Distributed amplifiers 287
10 2 6 The matrix amplifier 300
10 2 7 Balanced amplifiers 303
10 3 First trial device synthesis 305
10 4 FET synthesis by reverse modeling 310
10 5 FET synthesis for distributed power amplifiers 312
10 5 1 Power-impedance considerations 313
10 5 2 Frequency considerations 315
10 5 3 FET synthesis—example 316
10 6 Final remarks 321
Chapter 11 Computer-aided design 325
11 1 Introduction 325
11 2 Sensitivity analysis—basis 327
11 3 Application of the Monte Carlo method to yield forecasting 337
11 4 Uses of yield forecasting 343
11 5 FET centering 344
11 6 Longer-term developments 346
Chapter 12 Future developments 357
Index 365
X
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| id | DE-604.BV024400634 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T21:58:50Z |
| institution | BVB |
| isbn | 0890063141 |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-018379338 |
| oclc_num | 635835742 |
| open_access_boolean | |
| owner | DE-83 DE-11 |
| owner_facet | DE-83 DE-11 |
| physical | XXIII, 370 S. |
| publishDate | 1989 |
| publishDateSearch | 1989 |
| publishDateSort | 1989 |
| publisher | Artech House |
| record_format | marc |
| series2 | The Artech House microwave library |
| spelling | Ladbrooke, Peter H. Verfasser aut MMIC design, GaAs FETs and HEMTs Peter H. Ladbrooke Boston <<[u.a.]>> Artech House 1989 XXIII, 370 S. txt rdacontent n rdamedia nc rdacarrier The Artech House microwave library Galliumarsenid-Bauelement (DE-588)4155861-3 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Mikrowellenschaltung (DE-588)4169891-5 gnd rswk-swf Schottky-Kontakt (DE-588)4240294-3 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 s DE-604 Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 s Schottky-Kontakt (DE-588)4240294-3 s Integrierte Schaltung (DE-588)4027242-4 s Mikrowellenschaltung (DE-588)4169891-5 s Galliumarsenid-Bauelement (DE-588)4155861-3 s 1\p DE-604 HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018379338&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Ladbrooke, Peter H. MMIC design, GaAs FETs and HEMTs Galliumarsenid-Bauelement (DE-588)4155861-3 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Mikrowellenschaltung (DE-588)4169891-5 gnd Schottky-Kontakt (DE-588)4240294-3 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd |
| subject_GND | (DE-588)4155861-3 (DE-588)4131472-4 (DE-588)4169891-5 (DE-588)4240294-3 (DE-588)4027242-4 (DE-588)4155864-9 |
| title | MMIC design, GaAs FETs and HEMTs |
| title_auth | MMIC design, GaAs FETs and HEMTs |
| title_exact_search | MMIC design, GaAs FETs and HEMTs |
| title_full | MMIC design, GaAs FETs and HEMTs Peter H. Ladbrooke |
| title_fullStr | MMIC design, GaAs FETs and HEMTs Peter H. Ladbrooke |
| title_full_unstemmed | MMIC design, GaAs FETs and HEMTs Peter H. Ladbrooke |
| title_short | MMIC design, GaAs FETs and HEMTs |
| title_sort | mmic design gaas fets and hemts |
| topic | Galliumarsenid-Bauelement (DE-588)4155861-3 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Mikrowellenschaltung (DE-588)4169891-5 gnd Schottky-Kontakt (DE-588)4240294-3 gnd Integrierte Schaltung (DE-588)4027242-4 gnd Galliumarsenid-Feldeffekttransistor (DE-588)4155864-9 gnd |
| topic_facet | Galliumarsenid-Bauelement Feldeffekttransistor Mikrowellenschaltung Schottky-Kontakt Integrierte Schaltung Galliumarsenid-Feldeffekttransistor |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=018379338&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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