Proceedings of the 14th Biennial Conference on Insulating Films on Semiconductors: June 22- 24, 2005, Leuven, Belgium
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| Schriftenreihe: | Microelectronic engineering
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| Beschreibung: | XVI, 475 S. Ill., graph. Darst. |
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SCIENCE //^H DIRECT*
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MICROELECTRONIC
ENGINEERING
Microelectronic Engineering 80 (2005) ix-xvi —.
www.elsevier.com/locate/mee
Contents
Preface v
I. High-k/Metal-gate devices
R. Chau, J. Brask, S. Datta, G. Dewey, M. Doczy, B. Doyle, J. Kavalieros, B. Jin, M. Metz,
A. Majumdar and M. Radosavljevič
Application of high-ic gate dielectrics and metal gate electrodes to enable silicon and non-silicon
logic nanotechnology (invited paper) 1
R. Mitsuhashi, K. Yamamoto, S. Hayashi, A. Rothschild, S. Kubíček, A. Yeloso, S. Van Elshocht,
M. Jurczak, S. De Gendt, S. Biesemans and M. Niwa
45nm LSTP FET with FUSI Gate on PVD-Hf02 with excellent dri vability by advanced PDA treatment 7
L. Thevenod, M. Cassé, M. Mouis, G. Reimbold, F. Fillot, B. Guillaumot and F. Boulanger
Influence of TiN metal gate ön Si/Si02 surface roughness in N and PMOSFETs 11
II. Germanium devices
K.C. Saraswat, C.O. Chui, T. Krishnamohan, A. Nayfeh and P. McIntyre
Ge based high performance nanoscale MOSFETs (invited paper) 15
A. Stesmans and V.V. Afanas’ev
Point defects at interfacial layers in stacks of (100)Ge with nm-thin Hf02 and GeOx(Ny) insulators
probed by electron spin resonance 22
III. Alternative substrates and back-end dielectrics
B. De Jaeger, R. Bonzom, F. Leys, O. Richard, J. Van Steenbergen, G. Winderickx,
E. Van Moorhem, G. Raskin, F. Letertre, T. Billon, M. Meuris and M. Heyns
Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron
n- and p-FETs on Ge-On-Insulator substrates 26
C. -C. Cheng, C.-H. Chien, C.-W. Chen, S.-L. Hsu, M.-Y. Yang, C.-C. Huang, F.-L. Yang and
C.-Y. Chang
Impact of post-deposition-annealing on the electrical characteristics of HfOxNv gate dielectric on
Ge substrate 30
A. Dimoulas, G. Vellianitis, G. Mavrou, E.K. Evangelou, K. Argyropoulos and M. Houssa
Short minority carrier response time in Hf02/Ge metal-insulator-semiconductor capacitors 34
F. Devynck, F. Giustino and A. Pasquarello
Abrupt model interface for the 4H(0001)SiC-Si02 interface
38
X
Contents
S. Altshuler, Y. Chakk, A. Rozenblat and A. Cohen
Investigation of simultaneous fluorine and carbon incorporation in a silicon oxide dielectric layer
grown by PECVD 42
C. -M. Yang, C.-S. Lai, C.-Y. Wang, C.-E. Lue, J.-C. Chou, W.Y. Chung and D.G. Pijanowska
The characterization of stacked a-Si/SiGe/ot-Si sensing membrane 46
IV. Si02 and High-k interface and mobility characterization
M. Rommel, M. GroB, A. Ettinger, M. Lemberger, AJ. Bauer, L. Frey and H. Ryssel
Characterization of interface state densities by photocurrent analysis: comparison of results for
different insulator layers 50
F. Martinez, C. Leyris, G. Neau, M. Valenza, A. Hoffmann, J.C. Vildeuil, E. Vincent, F. Boeuf,
T. Skotnicki, M. Bidaud, D. Barge and B. Tavel
Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements 54
D. Felnhofer, E.P. Gusev, P. Jamison, and D.A. Buchanan
Charge trapping and detrapping in Hf02 high-K MOS capacitors using internal photoemission 58
J. Rappich, P. Hartig, N.H. Nickel, I. Sieber, S. Schulze and Th. Dittrich
Stable electrochemically passivated Si surfaces by ultra thin benzene-type layers 62
Y.G. Fedorenko, V.V. Afanas’ev and A. Stesmans
Impact of A1 incorporation in hafnia on interface states in (100)Si,/HfAlxOy 66
M. Schmidt, M.C. Lemme, H. Kurz, T. Witters, T. Schram, K. Cherkaoui, A. Negara and
P.K. Hurley
Impact of H2/N2 annealing on interface defect densities in Si(100)/Si02/Hf02/TiN gate stacks 70
B.J. Jones and R.C. Barklie
Analysis of defects at the interface between high-k thin films and (100) silicon 74
J.M. Sturm, A.I. Zinine, H. Wormeester, R.G. Bankras, J. Holleman, J. Schmitz and B. Poelsema
Laterally resolved electrical characterisation of high-A oxides with non-contact Atomic Force
Microscopy 78
G. S. Lujan, W. Magnus, B. Söréé, L.-A. Ragnarsson, L. Trojman, S. Kubicek, S. De Gendt,
M. Heyns and K. De Meyer
Barrier permeation effects on the inversion layer subband structure and its applications to the
electron mobility 82
L. Trojman, L.-A. Ragnarsson, L. Pantisano, G.S. Lujan, M. Houssa, T. Schram, F. Cubaynes,
M. Schaekers, A. Van Ammel, G. Groeseneken, S. De Gendt and M. Heyns
Effect of the dielectric thickness and the metal deposition technique on the mobility for Hf02/TaN
NMOS devices 86
V. High-k characterisation
A.J. Craven, M. MacKenzie, D.W. McComb and F.T. Doherty
Investigating physical and chemical changes in high-k gate stacks using nanoanalytical electron
microscopy (invited paper) 90
Contents xi
S. Shinagawa, H. Nohira, T. Ikuta, M. Hori, M. Kase and T. Hattori
Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films 98
V. V. Afanas’ev, A. Stesmans, C. Zhao, M. Caymax, Z.M. Rittersma and J.W. Maes
Band alignment between (lOO)Si and Hf-based complex metal oxides 102
B. Brijs, T. Sajavaara, S. Giangrandi, K. Arstilla, A. Vantomme and W. Vandervorst
Characterization of high and low k dieléctrica using low-energy Time of Flight Elastic Recoil
Detection 106
G. Lucovsky, Y. Zhang, J. Luning, V.V. Afanas’ev, A. Stesmans, S. Zöllner, D. Triyoso,
B.R. Rogers and J.L. Whitten
Intrinsic band edge traps in nano-crystalline Hf02 gate dielectrics 110
VI. BTI effects
S. Mahapatra, M.A. Alam, P. Bharath Kumar, T.R. Dalei, D. Varghese and D. Saha
Negative Bias Temperature Instability in CMOS devices (invited paper) 114
B. Kaczer, V. Arkhipov, M. Jurczak and G. Groeseneken
Negative Bias Temperature Instability (NBTI) in Si02 and SiON gate dielectrics understood
through disorder-controlled kinetics 122
J.H. Stathis, R. Bolam, M. Yang, T.B. Hook, A. Chou and G. Larosa
Interface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si
substrates 126
F. Crupi, C. Pace, G. Cocorullo, G. Groeseneken, M. Aoulaiche and M. Houssa
Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics 130
M. Aoulaiche, M. Houssa, R. Degraeve, G. Groeseneken, S. De Gendt and M.M. Heyns
Contribution of fast and slow states to Negative Bias Temperature Instabilities in HfxSi(). x)ON/
TaN based pMOSFETs 134
VII. Dielectrics for compound semiconductors
R. Droopad, M. Passlack, N. England, K. Rajagopalan, J. Abrokwah and A. Kummel
Gate dielectrics on compound semiconductors (invited paper) 138
VIII. Non-Hf based high-k dielectrics
S. Gaillard, Y. Rozier, C. Merckling, F. Ducroquet, M. Gendry and G. Hollinger
LaA103 films prepared by MBE on LaA103(001) and Si(001) substrates 146
T. Heeg, M. Wagner, J. Schubert, Ch. Bûchai, M. Boese, M. Luysberg, E. Cicerrella and
J.L. Freeouf
Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic
applications 150
R. Lupták, K. Fröhlich, A. Rosová, K. Huseková, M. Tapajna, D. Machajdík, M. Jergel,
J.P. Espinos and C. Mansilla
Growth of gadolinium oxide films for advanced MOS structures 154
Contents
xii
S.W. Lee, O.S. Kwon and C.S. Hwang
Chemically conformal deposition of SrTi03 thin films by Atomic Layer Deposition using
conventional metal organic precursors and remote-plasma activated H2O 158
L. Goux, Z. Xu, B. Kaczer, G. Groeseneken and D.J. Wouters
Deposition of 60 nm thin Sr0.8Bİ2.2Ta2O9 layers for application in scaled 1T1C and IT FeRAM
devices 162
IX. Oxide reliability
F. Palumbo, E. Miranda and S. Lombardo
Accurate assessment of the time-to-failure of hyper-thin gate oxides subjected to constant electrical
stress using a logistic-type model 166
L.J. Tang, K.L. Pey, C.H. Tung, R. Ranjan and W.H. Lin
Study of breakdown in ultrathin gate dielectrics using constant voltage stress and successive
constant voltage stress 170
J. Tahir-Kheli, M. Miyata and W.A. Goddard III
Dielectric breakdown in Si02 via electric field induced attached hydrogen defects 174
S. Gerardin, A. Cester, A. Paccagnella and G. Ghidini
Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxide 178
S. Aresu, W. De Ceuninck, R. Degraeve, B. Kaczer, G. Knuyt and L. De Schepper
Understanding oxide degradation mechanisms in ultra-thin ՏւՕշ through high-speed, high-
resolution in-situ measurements 182
R. Gusmeroli, A.S. Spinelli, C. Monzio Compagnoni, D. Ielmini and A.L. Lacaita
Edge and percolation effects on V7- window in nanocrystal memories 186
X. High-k dielectrics
A. Toriumi, K. Iwamoto, H. Ota, M. Kadoshima, W. Mizubayashi, T. Nabatame, A. Ogawa,
K. Tominaga, T. Horikawa and H. Satake
Advantages of HfAlON gate dielectric film for advanced low power CMOS application (invited
paper) 190
K. Yamamoto, S. Kubicek, A. Rothschild, R. Mitsuhashi, W. Deweerd, A. Veloso, M. Jurczak,
S. Biesemans, S. De Gendt, S. Wickramanayaka, S. Hayashi and M. Niwa
PVD-HfSiON gate dielectrics with Ni-FUSl electrode for 65nm LSTP application 198
K. Iwamoto, A. Ogawa, T. Nabatame, H. Satake and A. Toriumi
Performance improvement of n-MOSFETs with constituent gradient Hf02/Si02 interface 202
J.A. Ng, Y. Kuroki, N. Sugii, K. Kakushima, S.-I. Ohmi, K. Tsutsui, T. Hattori, H. Iwai and
H. Wong
Effects of low temperature annealing on the ultrathin La203 gate dielectric; comparison of post
deposition annealing and post metallization annealing 206
.1. Buckley, B. De Salvo, D. Deleruyelle, M. Gely, G. Nicotra, S. Lombardo, J.F. Damlencourt,
Ph. Hollinger, F. Martin and S. Deleonibus
Reduction of fixed charges in atomic layer deposited A1203 dielectrics 210
Contents
xiii
C.-L. Cheng, K.-S. Chang-Liao and T.-K. Wang
Comparison on the effects of defects at Si( 111) and Si(100) surface on electrical characteristics of
MOS devices with HfOxNy gate dielectric 214
J. H. Sim, S.C. Song, P.D. Kirsch, C.D. Young, R. Choi, D.L. Kwong, B.H. Lee and G. Bersuker
Effects of ALD HfD2 thickness on charge trapping and mobility 218
T.J. Park, S.K. Kim, J.H. Kim, J. Park, M. Cho, S.W. Lee, S.H. Hong and C.S. Hwang
Electrical properties of high-k Hf02 films on SÍ!_xGex substrates 222
P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys and D. Misra
Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs 226
XI. SOI devices
F. Balestra and J. Jomaah
Performance and new effects in advanced SOI devices and materials (invitedpaper) 230
C. Gallon, C. Fenouillet-Beranger, N. Bresson, S. Cristoloveanu, F. Allibert, S. Bord, C. Aulnetle,
D. Delille, E. Latu-Romain, J.M. Hartmann, T. Ernst, F. Andrieu, Y. Campidelli, B. Ghyselen,
I. Cayrefourcq, F. Fournel, N. Kernevez and T. Skotnicki
Ultra-thin strained SOI substrate analysis by pseudo-MOS measurements 241
A. Ohata. S. Cristoloveanu, A. Vandooren, M. Cassé and F. Daugé
Coupling effect between the front and back interfaces in thin SOI MOSFETs 245
XII. Non-volatile memory devices
R. Bez
Innovative technologies for high density non-volatile semiconductor memories (invited paper) 249
H.-C. Chien, C.-H. Kao, J.-W. Chang and T.-K. Tsai
Two-bit SONOS type Flash using a band engineering in the nitride layer 256
H. Sim, D. Choi, D. Lee, M. Hasan, C.B. Samantaray and H. Hwang
Reproducible resistance switching characteristics of pulsed laser-deposited polycrystalline Nb205 260
S. Choi, S.-S. Kim, H. Yang, M. Chang, S. Jeon, C. Kim, D.Y. Kim and H. Hwang
A1203 with Metal-Nitride nanocrystals as a charge-trapping layer of MONOS-type nonvolatile
memory devices 264
M. Porti, M. Avidano, M. Nafría, X. Aymerich, J. Carreras and B. Garrido
A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals 268
XIII. Metal gates/Dcfect modeling
G. Pourtois, A. Lauwers, J. Kitti, L. Pantisano, B. Söréé, S. De Gendt, W. Magnus, M. Heyns and
K. Maex
First-principle calculations on gate/dielectric interfaces: on the origin of work function shifts
(invited paper) 272
G. Sjöblom, L. Pantisano, T. Schram, J. Olsson, V.V. Afanas’ev and M. Heyns
Metal gate work function extraction using Fowler-Nordheim tunneling techniques
280
XIV
Contents
T. Matsukawa, Y.X. Liu, M. Masahara, K. Ishii, K. Endo, H. Yamauchi, E. Sugimata,
H. Takashima, T. Higashino, E. Suzuki and S. Kanemaru
Work function controllability of metal gates made by interdiffusing metal stacks with low and high
work functions 284
J. Godet and A. Pasquarello
Ab initio study of charged states of H in amorphous Si02 288
P.V. Sushko, S. Mukhopadhyay, A.M. Stoneham and A.L. Shluger
Oxygen vacancies in amorphous silica: structure and distribution of properties 292
XIV. FERAM/DRAM dielectrics
H. Kohlstedt, Y. Mustafa, A. Gerber, A. Petrára, M. Fitsilis, R. Meyer, U. Böttger and R. Waser
Current status and challenges of ferroelectric memory devices (invited paper) 296
E. Tokumitsu, M. Senoo and T. Miyasako
Use of ferroelectric gate insulator for thin film transistors with ITO channel 305
P.-c. Juan, Y.-p. Hu, F.-c. Chiu and J.Y.-m. Lee
The electrical properties of Metal-Ferroelectric (PbZr0.53Tio.4703)-fnsulator Silicon (MF1S)
capacitors with different insulator materials 309
Ch. Wenger, R. Sorge, T. Schroeder, A.U. Mane, G. Lippert, G. Lupina, J. D^browski,
P. Zaumseil and H.-J. Muessig
MIM capacitors using amorphous high-k PrTixOy dielectrics 313
K. Cho, J. Lee, J.-S. Lim, H.J. Lim, J. Lee, S. Park, C.-Y. Yoo, S.-T. Kim, U-l. Chung and
J.-T. Moon
Low temperature crystallized Ta205/Nb205 bi-layers integrated into R1R capacitor for 60 nm
generation and beyond 317
XV. Flash reliability
D. leimini, A.S. Spinelli and A.L. Lacaita
Recent developments on Flash memory reliability (invitedpaper) 321
J.H. Yi, S.D. Lee, J.-H. Ahn, H. Shin, Y.-J. Park and H.S. Min
Device degradation model for polysilicon-oxide-nitride-oxide-silicon (SONOS) based on anode
hole fluence 329
A. Arreghini, F. Driussi, D. Esseni, L. Selmi, M.J. van Duuren and R. van Schaijk
New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of
SONOS devices 333
XVI. Low-k dielectrics
R.J.O.M. Hoofman, G.J.A.M. Verheijden, J. Michelon, F. Iacopi, Y. Travaly, M.R. Baklanov,
Zs. Tokéi and G. Beyer
Challenges in the implementation of low-k dielectrics in the back-end of line (invited paper) 337
C. Guedj, X. Portier, F. Mondon, V. Arnal, J.F. Guillaumond, L. Amaud, J.P. Barnes,
V. Jousseaume, A. Roule, S. Maitrejean, L.L. Chapelon, G. Reimbold, J. Torres and G. Passemard
Bias-stress-induced evolution of the dielectric properties of porous-ULK/ copper advanced
interconnects 345
Contents
XV
B. Xie, L. Choate and A.J. Muscat
Repair and capping of porous MSQ films using chlorosilanes and supercritical C02 349
XVII. Trapping and breakdown
K.L. Pey, R. Ranjan, C.H. Tung, L.J. Tang, V.L. Lo, K.S. Lim, T. A/L Selvarajoo and D.S. Ang
Breakdowns in high-k gate stacks of nano-scale CMOS devices (invitedpaper) 353
J. Mitard, C. Leroux, G. Ghibaudo, G. Reimbold, X. Garros, B. Guillaumot and F. Boulanger
Investigation on trapping and detrapping mechanisms in Hf02 films 362
C. Z. Zhao, M.B. Zahid, J.F. Zhang, G. Groeseneken, R. Degraeve and S. De Gendt
Properties and dynamic behavior of electron traps in Hf02/Si02 stacks 366
R. Ranjan, K.L. Pey, C.H. Tung, L.J. Tang, B. Elattari, T. Kauerauf, G. Groeseneken,
R. Degraeve, D.S. Ang and L.K. Bera
Hf02/spacer-interface breakdown in Hf02 high-K/poly-silicon gate stacks 370
A. Hiraiwa and D. Ishikawa
Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides 374
XVIII. Multiple-gate and organic devices
T. Poiroux, M. Vinet, O. Faynot, J. Widiez, J. Lolivier, T. Ernst, B. Previtali and S. Deleonibus
Multiple gate devices: advantages and challenges (invited paper) 378
T. Rudenko, N. Collaert, S. De Gendt, V. Kilchytska, M. Jurczak and D. Flandre
Effective mobility in FinFET Structures with Hf02 and SiON gate dielectrics and TaN gate
electrode 386
Y.X. Liu, E. Sugimata, M. Masahara, K. Endo, K. Ishii, T. Matsukawa, H. Takashima,
H. Yamauchi and E. Suzuki
Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-
dependent wet etching 390
D. Zander, N. Hoffmann, K. Lmimouni, S. Lenfant, C. Petit and D. Vuillaume
Organic field effect transistor based on a novel soluble pentacene precursor and operating at low
voltages 394
C. Petit, G. Salace, S. Lenfant and D. Vuillaume
Inelastic tunneling spectra of an alkyl self-assembled monolayer using a MOS tunnel junction as a
test-bed 398
XIX. Defect modeling
C.J. Forst, C.R. Ashman, K. Schwarz and P.E. Blochl
Ab-initio simulations on growth and interface properties of epitaxial oxides on silicon (invited
paper) 402
K. Xiong and J. Robertson
Point defects in Hf02 high K gate oxide 408
J.L. Gavartin, L. Fonseca, G. Bersuker and A.L. Shluger
Ab initio modeling of structure and defects at the HF02/Si interface
412
XVI
Contents
S. Rashkeev, K. van Benthem, S.T. Pantelides and S.J. Pennycook
Single HP atoms inside the ultrathin S1O2 interlayer between HfC 2 dielectric film and Si substrate:
How do they modify the interface? 416
F. Giustino and A. Pasquarello
Infrared properties of ultrathin oxides on Si(100) 420
XX. SiON gate dielectrics
D. Matsushita, K. Muraoka, K. Kato, Y. Nakasaki, S. Inumiya, K. Eguchi and M. Takayanagi
Novel fabrication process to realize ultra-thin (EOT = 0.7 nm) and ultra-low-leakage SiON gate
dielectrics (invited paper) 424
A. Kovalgin, A. Hof and J. Schmitz
An approach to modeling of silicon oxidation in a wet ultra-diluted ambient 432
W. Polspoel, W. Vandervorst, J. Petry, T. Conard and A. Benedetti
Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with
different post-deposition treatments using C-AFM 436
R. Degraeve, B. Kaczer, Ph. Roussel and G. Groeseneken
On the trap generation rate in ultrathin SiON under Constant Voltage Stress 440
M.F. Beug, R. Ferretti and K.R. Hofmann
Polarity dependent generation of gate-side and substrate-side oxide border traps in nitrided gate
oxides 444
XXI. Nanostructured materials
C.V. Cojocaru, F. Ratto, C. Harnagea, A. Pignolet and F. Rosei
Semiconductor and insulator nanostructures: challenges and opportunities (invitedpaper) 448
Author Index
457
|
| any_adam_object | 1 |
| author2 | Groeseneken, Guido |
| author2_role | edt |
| author2_variant | g g gg |
| author_corporate | INFOS (Conference on Insulating Films on Semiconductors) Löwen |
| author_corporate_role | aut |
| author_facet | Groeseneken, Guido INFOS (Conference on Insulating Films on Semiconductors) Löwen |
| author_sort | INFOS (Conference on Insulating Films on Semiconductors) Löwen |
| building | Verbundindex |
| bvnumber | BV023837635 |
| ctrlnum | (OCoLC)916128730 (DE-599)BVBBV023837635 |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 2005 Löwen gnd-content |
| genre_facet | Konferenzschrift 2005 Löwen |
| id | DE-604.BV023837635 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:37:44Z |
| institution | BVB |
| institution_GND | (DE-588)6505850-1 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017479745 |
| oclc_num | 916128730 |
| open_access_boolean | |
| owner | DE-634 |
| owner_facet | DE-634 |
| physical | XVI, 475 S. Ill., graph. Darst. |
| publishDate | 2005 |
| publishDateSearch | 2005 |
| publishDateSort | 2005 |
| publisher | Elsevier |
| record_format | marc |
| series | Microelectronic engineering |
| series2 | Microelectronic engineering |
| spelling | INFOS (Conference on Insulating Films on Semiconductors) 14 2005 Löwen Verfasser (DE-588)6505850-1 aut Proceedings of the 14th Biennial Conference on Insulating Films on Semiconductors June 22- 24, 2005, Leuven, Belgium ed. by: G. Groeseneken ... Amsterdam [u.a.] Elsevier 2005 XVI, 475 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Microelectronic engineering 80 Isolierschicht (DE-588)4147018-7 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 2005 Löwen gnd-content Halbleiter (DE-588)4022993-2 s Isolierschicht (DE-588)4147018-7 s DE-604 Groeseneken, Guido edt Microelectronic engineering 80 (DE-604)BV002586326 80 KOBV Fremddatenuebernahme application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017479745&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the 14th Biennial Conference on Insulating Films on Semiconductors June 22- 24, 2005, Leuven, Belgium Microelectronic engineering Isolierschicht (DE-588)4147018-7 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4147018-7 (DE-588)4022993-2 (DE-588)1071861417 |
| title | Proceedings of the 14th Biennial Conference on Insulating Films on Semiconductors June 22- 24, 2005, Leuven, Belgium |
| title_auth | Proceedings of the 14th Biennial Conference on Insulating Films on Semiconductors June 22- 24, 2005, Leuven, Belgium |
| title_exact_search | Proceedings of the 14th Biennial Conference on Insulating Films on Semiconductors June 22- 24, 2005, Leuven, Belgium |
| title_full | Proceedings of the 14th Biennial Conference on Insulating Films on Semiconductors June 22- 24, 2005, Leuven, Belgium ed. by: G. Groeseneken ... |
| title_fullStr | Proceedings of the 14th Biennial Conference on Insulating Films on Semiconductors June 22- 24, 2005, Leuven, Belgium ed. by: G. Groeseneken ... |
| title_full_unstemmed | Proceedings of the 14th Biennial Conference on Insulating Films on Semiconductors June 22- 24, 2005, Leuven, Belgium ed. by: G. Groeseneken ... |
| title_short | Proceedings of the 14th Biennial Conference on Insulating Films on Semiconductors |
| title_sort | proceedings of the 14th biennial conference on insulating films on semiconductors june 22 24 2005 leuven belgium |
| title_sub | June 22- 24, 2005, Leuven, Belgium |
| topic | Isolierschicht (DE-588)4147018-7 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Isolierschicht Halbleiter Konferenzschrift 2005 Löwen |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017479745&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV002586326 |
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