Infrared photon detectors:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Bellingham
SPIE Optical Engineering Press
1995
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIV, 642 S. graph. Darst. |
| ISBN: | 081941798X |
Internformat
MARC
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Datensatz im Suchindex
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| adam_text | INFRARED PHOTON DETECTORS ANTONI ROGALSKI INSTITUTE OF TECHNICAL
PHYSICS, WAT WARSAW WITH CONTRIBUTIONS BY MASAFUMI KIMATA MITSUBISHI
ELECTRIC CORPORATION VASILY F. KOCHEROV RESEARCH, DEVELOPMENT, AND
PRODUCTION CENTER ORION JOZEF PIOTROWSKI VIGO LTD. FEODOR F. SIZOV
INSTITUTE OF SEMICONDUCTOR PHYSICS IGOR I. TAUBKIN RESEARCH,
DEVELOPMENT, AND PRODUCTION CENTER ORION NATSURO TUBOUCHI MITSUBISHI
ELECTRIC CORPORATION NICOLAS B. ZALETAEV RESEARCH, DEVELOPMENT, AND
PRODUCTION CENTER ORION SPIE O P T I C A L E N G I N E E R I N G P R
E S S A PUBLICATION OF SPIE*THE INTERNATIONAL SOCIETY FOR OPTICAL
ENGINEERING BELLINGHAM, WASHINGTON USA CONTENTS CONTRIBUTORS XI PREFACE
XIII 1. INTRODUCTION 1 ANTONI ROGALSKI 1.1. HISTORICAL BACKGROUND 1 1.2.
GENERAL CLASSIFICATION OF IR DETECTORS 5 1.3. PHOTON NOISE AND
FUNDAMENTAL LIMITS 7 REFERENCES 9 2. PHOTOCONDUCTIVE DETECTORS 13 ANTONI
ROGALSKI 2.1. INTRINSIC PHOTOCONDUCTIVITY THEORY 13 2.1.1. GENERAL
THEORY 14 2.1.2. SWEEP-OUT EFFECTS 16 2.1.3. NOISE MECHANISMS IN
PHOTOCONDUCTORS 19 2.1.4. QUANTUM EFFICIENCY 21 2.1.5. ULTIMATE
PERFORMANCE OF PHOTOCONDUCTORS 21 2.1.6. INFLUENCE OF BACKGROUND 26
2.1.7. INFLUENCE OF SURFACE RECOMBINATION 27 2.2. EXTRINSIC
PHOTOCONDUCTIVITY THEORY 28 2.3. OPERATING TEMPERATURE OF EXTRINSIC AND
INTRINSIC PHOTOCONDUCTIVE DETECTORS 40 2.3.1. DETECTOR THICKNESS 41
2.3.2. CAPTURE CROSS-SECTION 42 2.3.3. FREE CARRIER DENSITY 44 2.3.4.
IMPURITY CONCENTRATION 46 REFERENCES 46 3. PHOTOVOLTAIC DETECTORS 51
ANTONI ROGALSKI 3.1. PHOTOVOLTAIC EFFECT 51 3.2. DARK CURRENT IN P-N
JUNCTIONS 53 3.2.1. DIFFUSION CURRENT 54 3.2.2. GENERATION-RECOMBINATION
CURRENT 55 V VI CONTENTS 3.2.3. TUNNELING CURRENT 56 3.2.4. SURFACE
LEAKAGE CURRENT 59 3.3. PHOTOCURRENT IN THE P-N JUNCTION 61 3.4. R 0 A
PRODUCT 64 3.4.1. DIFFUSION CURRENT 64 3.4.2. GENERATION-RECOMBINATION
CURRENT 66 3.4.3. TUNNELING CURRENT 66 3.5. NOISE MECHANISMS IN
PHOTODIODES 68 3.6. DETECTIVITY 69 3.7. RESPONSE TIME 70 3.8. SCHOTTKY
BARRIER PHOTODIODES 72 3.8.1. SCHOTTKY-MOTT THEORY AND ITS MODIFICATIONS
72 3.8.2. CURRENT TRANSPORT PROCESSES 74 3.8.3. SUICIDES 76 3.9.
AVALANCHE PHOTODIODES 76 REFERENCES 79 4. PHOTOELECTROMAGNETIC AND
DEMBER DETECTORS 83 ANTONI ROGALSKI 4.1. PHOTOELECTROMAGNETIC DETECTORS
83 4.2. DEMBER DETECTORS 87 REFERENCES 89 5. HETERODYNE DETECTION 91
ANTONI ROGALSKI REFERENCES 96 6. CHARGE TRANSFER DEVICES 99 MASAFUMI
KIMATA AND NATSURO TUBOUCHI 99 99 103 105 108 110 113 116 117 122 122
124 128 135 137 140 REFERENCES 141 6.1. 6.2. 6.3. 6.4. CHARG 6.1.1.
6.1.2. 6.1.3. 6.1.4. 6.1.5. 6.1.6. 6.1.7. 6.1.8. FOCAL 6.2.1. 6.2.2.
6.2.3. 6.2.4. NOISE 2-COUPLED DEVICE MIS CAPACITOR CHARGE TRANSFER GATE
STRUCTURES AND CLOCKING TECHNIQUES CHARGE TRANSFER EFFICIENCY
BURIED-CHANNEL CCD OUTPUT READOUT TECHNIQUES ELECTRICAL SIGNAL INPUT
TECHNIQUE LOW TEMPERATURE OPERATION PLANE ARRAYS FPA ARCHITECTURES UNIT
CELL DESIGN READOUT ARCHITECTURES TIME-DELAY INTEGRATION ANALYSIS FPA
EVALUATION AND FIGURE OF MERIT CONTENTS V/7 7. GENERATION-RECOMBINATION
PROCESSES: RECOMBINATION TIME 145 ANTONI ROGALSKI 7.1. SHOCKLEY-READ
MECHANISM 146 7.2. RADIATIVE MECHANISM 149 7.3. AUGER MECHANISM 152
7.3.1. BAND-TO-BAND AUGER MECHANISMS 152 7.3.2. OTHER AUGER
RECOMBINATION MECHANISMS 158 7.4. CARRIER LIFETIME IN SILICON 160 7.5.
CARRIER LIFETIME IN INSB AND INAS 165 7.6. CARRIER LIFETIME IN HG LX CD
X TE 168 7.7. CARRIER LIFETIME IN LEAD SALTS 174 REFERENCES 182 8.
EXTRINSIC SILICON AND GERMANIUM DETECTORS 189 VASILY F. KOCHEROV, IGOR
I. TAUBKIN, AND NICOLAS B. ZALETAEV 8.1. PHOTOCONDUCTOR DETECTORS 192
8.2. PECULIARITIES OF THE PERFORMANCE OF EXTRINSIC PHOTOCONDUCTOR
DETECTORS UNDER LOW BACKGROUNDS 194 8.2.1. DEPENDENCE OF CONCENTRATION
OF FREE CHARGE CARRIERS IN A COMPENSATED EXTRINSIC SEMICONDUCTOR ON
TEMPERATURE AND BACKGROUND IRRADIANCE 196 8.2.2. DISTRIBUTION OF EXCESS
CHARGE CARRIERS IN DETECTOR UNDER HOMOGENEOUS IRRADIATION IN THE
PRESENCE OF ELECTRIC FIELD 202 8.2.3. DEPENDENCE OF PHOTOCONDUCTIVE GAIN
ON DETECTOR BIAS VOLTAGE, FREQUENCY OF PHOTOSIGNAL MODULATION, AND
BACKGROUND IRRADIANCE 210 8.2.4. LOCAL RESPONSIVITY OF DETECTOR AND
CROSSTALK IN DETECTOR ARRAYS 225 8.2.5. NOISE AND THE RADIATION LIMIT OF
DETECTIVITY 231 8.2.6. PHOTORESPONSE OF DETECTOR AT SIGNAL LEVELS
EXCEEDING BACKGROUND IRRADIANCE 237 8.2.7. IMPEDANCE OF DETECTOR 250
8.2.8. TRANSIENT BEHAVIOR OF DETECTOR WITH VARIATION OF BIAS: A NEW
OPERATION MODE OF AN EXTRINSIC PHOTOCONDUCTOR DETECTOR 252 8.3. OTHER
VARIETIES OF EXTRINSIC PHOTODETECTORS 258 8.3.1. EXTRINSIC
DOUBLE-INJECTION PHOTODIODES 259 8.3.2. DETECTORS BASED ON IMPURITY-BAND
PHOTOCONDUCTORS 275 8.3.3. INTEGRATING IR P-I-N DETECTOR 277 8.3.4.
EXTRINSIC IR FIELD-EFFECT TRANSISTOR 278 8.4. FOCAL PLANE ARRAYS 279
8.4.1. MONOLITHIC PHOTODETECTOR ARRAYS 280 8.4.2. ACCUMULATION-MODE
CHARGE-INJECTION DEVICE (CID) ARRAYS 281 8.4.3. BULK-ACCUMULATION-MODE
ARRAYS 284 VIII CONTENTS 8.4.4. EXTRINSIC CHARGE-EXTRACTION DEVICE
(XCED) ARRAYS 285 8.4.5. DIRECT READOUT EXTRINSIC PHOTODETECTOR ARRAYS
287 REFERENCES 290 9. SCHOTTKY-BARRIER PHOTOEMISSIVE DETECTORS 299
MASAFUMI KIMATA AND NATSURO TUBOUCHI 9.1. SCHOTTKY-BARRIER DETECTORS 299
9.1.1. INTERNAL PHOTOEMISSION 299 9.1.2. SCATTERING EFFECT 303 9.1.3.
METAL ELECTRODES 306 9.1.4. BARRIER HEIGHT CONTROL 308 9.1.5. BACK-SIDE
ILLUMINATION/FRONT-SIDE ILLUMINATION 310 9.1.6. DARK CURRENT 312 9.2.
SCHOTTKY-BARRIER INFRARED FOCAL PLANE ARRAYS 314 9.2.1. HISTORICAL
OVERVIEW 314 9.2.2. PIXEL DESIGN AND OPERATION 318 9.2.3. IMPROVEMENT IN
FILL FACTOR 322 9.2.4. PERFORMANCE 326 9.3. INFRARED CAMERAS WITH
SCHOTTKY-BARRIER INFRARED FOCAL PLANE ARRAYS 331 9.4. NOVEL
PHOTOEMISSIVE DETECTORS 337 REFERENCES 340 10. III-V DETECTORS 351
ANTONI ROGALSKI 10.1. SOME PHYSICAL PROPERTIES OF III-V NARROW GAP
SEMICONDUCTORS 351 10.2. TECHNOLOGY AND PROPERTIES OF INSB
PHOTOCONDUCTIVE DETECTORS 356 10.3. TECHNOLOGY AND PROPERTIES OF INSB
PHOTOELECTROMAGNETIC DETECTORS 359 10.4. TECHNOLOGY AND PROPERTIES OF
III-V PHOTODIODES 360 10.4.1. INSB AND INAS PHOTODIODES 360 10.5.
TECHNOLOGY AND PROPERTIES OF INASJ X SB X DETECTORS 370 10.5.1. INAS LX
SB X PHOTODIODES * 370 10.5.2. INAS ( X SB X PHOTOCONDUCTORS 376 10.6.
FOCAL PLANE ARRAYS 377 10.6.1. HYBRID INSB/SI FOCAL PLANE ARRAYS 378
10.6.2. INSB CHARGE-INJECTION DEVICES 381 10.6.3. INSB CHARGE-COUPLED
DEVICES 384 REFERENCES 384 11. HG T X CD X TE DETECTORS 391 JOZEF
PIOTROWSKI 11.1. SOME PHYSICAL PROPERTIES OF HGJ X CD X TE 393 11.1.1.
PERFORMANCE-RELATED SEMICONDUCTOR PROPERTIES 393 11.1.2. GROWTH OF BULK
CRYSTALS AND EPILAYERS 398 11.1.3. DEFECTS AND IMPURITIES 402 CONTENTS
IX 11.2. ULTIMATE PERFORMANCE OF HG, X CD X TE PHOTODETECTORS 405
11.2.1. THEORETICAL MODEL 405 11.2.2. EQUILIBRIUM MODE 407 11.2.3.
NON-EQUILIBRIUM MODE 408 11.2.4. REDUCED VOLUME DEVICES 409 11.3.
PHOTOCONDUCTIVE DETECTORS 414 11.3.1. THEORETICAL PERFORMANCE 414
11.3.2. TECHNOLOGY 420 11.3.3. MEASURED PERFORMANCE 424 11.3.4. SPRITE
DETECTORS 429 11.3.5. EXCLUDED PHOTOCONDUCTORS 433 11.4. DEMBER EFFECT
DETECTORS 437 11.5. PHOTOELECTROMAGNETIC DETECTORS 440 11.5.1.
THEORETICAL DESIGN 440 11.5.2. FABRICATION AND MEASURED PERFORMANCE 442
11.5.3. MAGNETOCONCENTRATION DETECTORS 444 11.6. PHOTODIODES 447 11.6.1.
THEORETICAL PERFORMANCE 447 11.6.2. TECHNOLOGY 452 11.6.3. PROPERTIES
456 11.6.4. NON-EQUILIBRIUM PHOTODIODES 460 11.7. FOCAL PLANE ARRAYS 465
11.7.1. MONOLITHIC FPAS 466 11.7.2. HYBRID FPAS 469 11.7.3. MONOLITHIC
HETEROSTRUCTURE FPAS 473 11.8. FINAL REMARKS 474 REFERENCES 475 12.
HGZNTE AND HGMNTE DETECTORS 495 ANTONI ROGALSKI 12.1. HG, X CD X TE
VERSUS ALTERNATIVE MATERIALS 495 12.2. HG, ZN X TE DETECTORS 500 1-X X
12.2.1. PHOTOCONDUCTIVE DETECTORS 500 12.2.2. PHOTOVOLTAIC DETECTORS 502
12.3. HG, X MN X TE DETECTORS 505 REFERENCES 509 13. IV-VI DETECTORS 513
ANTONI ROGALSKI 13.1. SOME PHYSICAL PROPERTIES OF LEAD SALTS 513 13.2.
BINARY LEAD SALT PHOTOCONDUCTIVE DETECTORS 519 13.3. PHOTOVOLTAIC
DETECTORS 524 13.1.1. R 0 A PRODUCT 524 13.3.2. TECHNOLOGY AND
PROPERTIES OF LEAD SALT PHOTODIODES 531 13.3.3. SCHOTTKY-BARRIER
PHOTODIODES 538 X CONTENTS 13.3.4. UNCONVENTIONAL THIN FILM PHOTODIODES
544 13.4. LEAD SALT FPAS 548 REFERENCES 550 14. SEMICONDUCTOR
SUPERLATTICE AND QUANTUM WELL DETECTORS 561 FEODOR F. SIZOV 14.1.
SEMICONDUCTOR SUPERLATTICES AND QUANTUM WELLS 563 14.1.1. BAND OFFSET
AND MATERIAL CONSIDERATIONS 563 14.1.2. TYPES OF STRUCTURES 565 14.1.3.
CONFINED ELECTRONS AND OPTICAL TRANSITIONS IN SLS AND MQWS 565 14.2.
INTERSUBBAND QUANTUM WELL DETECTORS 568 14.2.1. INTERSUBBAND OPTICAL
ABSORPTION 568 14.2.2. INTERSUBBAND RELAXATION TIME 574 14.2.3.
INTERSUBBAND MULTIPLE QUANTUM WELL III-V PHOTOCONDUCTIVE DETECTORS 575
14.2.4. MINIBAND TRANSPORT INTERSUBBAND MULTIPLE QUANTUM WELL DETECTORS
581 14.2.5. PHOTOVOLTAIC TYPE INTERSUBBAND MULTIPLE QUANTUM WELL
DETECTORS 583 14.2.6. MULTICOLOR MULTIPLE QUANTUM WELL DETECTORS 585
14.2.7. PERFORMANCE OF INTERSUBBAND DETECTORS 587 14.2.8. INTERSUBBAND
N-TYPE III-V MATERIAL SYSTEMS DETECTOR ARRAYS 591 14.3. NORMAL INCIDENCE
QUANTUM WELL INTERSUBBAND DETECTORS 594 14.3.1. SI/SI, GE INTERSUBBAND
NORMAL INCIDENCE DETECTORS 594 1-* X 14.3.2. III-V SYSTEM INTERSUBBAND
NORMAL INCIDENCE DETECTORS 597 14.4. INTERBAND TYPE II INFRARED
SUPERLATTICE DETECTORS 600 14.4.1. RNSB/RNASJ X SB X STRAINED LAYER
SUPERLATTICE DETECTORS 602 14.2.2. INAS/GAJ X IN X SB STRAINED LAYER
SUPERLATTICE DETECTORS 605 14.5. HGTE/CDTE SUPERLATTICES FOR INFRARED
DETECTION 607 14.6. DOPING SUPERLATTICE DETECTORS 610 14.6.1. III-V
DOPING SUPERLATTICES 612 14.6.2. IV-VI DOPING SUPERLATTICES 612 14.7.
CONCLUSIONS 613 REFERENCES 614 FINAL REMARKS 625 ANTONI ROGALSKI INDEX
635 CONTRIBUTOR BIOGRAPHIES 643
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| id | DE-604.BV023736098 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:33:45Z |
| institution | BVB |
| isbn | 081941798X |
| language | English |
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| owner_facet | DE-634 |
| physical | XIV, 642 S. graph. Darst. |
| publishDate | 1995 |
| publishDateSearch | 1995 |
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| publisher | SPIE Optical Engineering Press |
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| spelling | Infrared photon detectors Antoni Rogalski ... Bellingham SPIE Optical Engineering Press 1995 XIV, 642 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Infrarotdetektor (DE-588)4161692-3 gnd rswk-swf Infrarotdetektor (DE-588)4161692-3 s DE-604 Rogalski, Antoni Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017285176&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Infrared photon detectors Infrarotdetektor (DE-588)4161692-3 gnd |
| subject_GND | (DE-588)4161692-3 |
| title | Infrared photon detectors |
| title_auth | Infrared photon detectors |
| title_exact_search | Infrared photon detectors |
| title_full | Infrared photon detectors Antoni Rogalski ... |
| title_fullStr | Infrared photon detectors Antoni Rogalski ... |
| title_full_unstemmed | Infrared photon detectors Antoni Rogalski ... |
| title_short | Infrared photon detectors |
| title_sort | infrared photon detectors |
| topic | Infrarotdetektor (DE-588)4161692-3 gnd |
| topic_facet | Infrarotdetektor |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017285176&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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