Advanced gate stacks for high-mobility semiconductors:
Gespeichert in:
Weitere Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Berlin [u.a.]
Springer
2007
|
Schriftenreihe: | Advanced microelectronics
27 |
Schlagworte: | |
Beschreibung: | XXII, 383 S. Ill., graph. Darst. 235 mm x 155 mm |
ISBN: | 3540714901 9783540714903 |
Internformat
MARC
LEADER | 00000nam a2200000 cb4500 | ||
---|---|---|---|
001 | BV023340600 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | t | ||
008 | 080611s2007 gw ad|| |||| 00||| eng d | ||
015 | |a 07,N14,0943 |2 dnb | ||
020 | |a 3540714901 |c Gb. : ca. EUR 139.05 (freier Pr.), ca. sfr 213.00 (freier Pr.) |9 3-540-71490-1 | ||
020 | |a 9783540714903 |c Gb. : ca. EUR 139.05 (freier Pr.), ca. sfr 213.00 (freier Pr.) |9 978-3-540-71490-3 | ||
024 | 3 | |a 9783540714903 | |
035 | |a (OCoLC)166358185 | ||
035 | |a (DE-599)BVBBV023340600 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
044 | |a gw |c XA-DE-BE | ||
049 | |a DE-29T | ||
050 | 0 | |a TK7871 | |
082 | 0 | |a 621.38152 |2 22 | |
084 | |a UP 4600 |0 (DE-625)146402: |2 rvk | ||
084 | |a ZN 3460 |0 (DE-625)157317: |2 rvk | ||
084 | |a ZN 4960 |0 (DE-625)157426: |2 rvk | ||
084 | |a 620 |2 sdnb | ||
245 | 1 | 0 | |a Advanced gate stacks for high-mobility semiconductors |c A. Dimoulas ... (eds.) |
264 | 1 | |a Berlin [u.a.] |b Springer |c 2007 | |
300 | |a XXII, 383 S. |b Ill., graph. Darst. |c 235 mm x 155 mm | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Advanced microelectronics |v 27 | |
650 | 4 | |a Dielectrics | |
650 | 4 | |a Gate array circuits |x Materials | |
650 | 4 | |a Germanium compounds | |
650 | 4 | |a Metal oxide semiconductors | |
650 | 4 | |a Metal oxide semiconductors, Complementary | |
650 | 4 | |a Semiconductors |x Materials | |
650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a High-k-Dielektrikum |0 (DE-588)7602833-1 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Germanium |0 (DE-588)4135644-5 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)4143413-4 |a Aufsatzsammlung |2 gnd-content | |
689 | 0 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
689 | 0 | 1 | |a High-k-Dielektrikum |0 (DE-588)7602833-1 |D s |
689 | 0 | 2 | |a Germanium |0 (DE-588)4135644-5 |D s |
689 | 0 | 3 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Dimoulas, Athanasios |4 edt | |
776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe |z 978-3-540-71491-0 |
830 | 0 | |a Advanced microelectronics |v 27 |w (DE-604)BV012563021 |9 27 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-016524369 |
Datensatz im Suchindex
_version_ | 1804137693357015040 |
---|---|
adam_txt | |
any_adam_object | |
any_adam_object_boolean | |
author2 | Dimoulas, Athanasios |
author2_role | edt |
author2_variant | a d ad |
author_facet | Dimoulas, Athanasios |
building | Verbundindex |
bvnumber | BV023340600 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871 |
callnumber-search | TK7871 |
callnumber-sort | TK 47871 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | UP 4600 ZN 3460 ZN 4960 |
ctrlnum | (OCoLC)166358185 (DE-599)BVBBV023340600 |
dewey-full | 621.38152 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.38152 |
dewey-search | 621.38152 |
dewey-sort | 3621.38152 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Maschinenbau / Maschinenwesen Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
discipline_str_mv | Maschinenbau / Maschinenwesen Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02229nam a2200601 cb4500</leader><controlfield tag="001">BV023340600</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">080611s2007 gw ad|| |||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">07,N14,0943</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3540714901</subfield><subfield code="c">Gb. : ca. EUR 139.05 (freier Pr.), ca. sfr 213.00 (freier Pr.)</subfield><subfield code="9">3-540-71490-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783540714903</subfield><subfield code="c">Gb. : ca. EUR 139.05 (freier Pr.), ca. sfr 213.00 (freier Pr.)</subfield><subfield code="9">978-3-540-71490-3</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783540714903</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)166358185</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV023340600</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">22</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 4600</subfield><subfield code="0">(DE-625)146402:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 3460</subfield><subfield code="0">(DE-625)157317:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 4960</subfield><subfield code="0">(DE-625)157426:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">620</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Advanced gate stacks for high-mobility semiconductors</subfield><subfield code="c">A. Dimoulas ... (eds.)</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin [u.a.]</subfield><subfield code="b">Springer</subfield><subfield code="c">2007</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXII, 383 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield><subfield code="c">235 mm x 155 mm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Advanced microelectronics</subfield><subfield code="v">27</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dielectrics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gate array circuits</subfield><subfield code="x">Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Germanium compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors, Complementary</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Materials</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">High-k-Dielektrikum</subfield><subfield code="0">(DE-588)7602833-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Germanium</subfield><subfield code="0">(DE-588)4135644-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4143413-4</subfield><subfield code="a">Aufsatzsammlung</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">High-k-Dielektrikum</subfield><subfield code="0">(DE-588)7602833-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Germanium</subfield><subfield code="0">(DE-588)4135644-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dimoulas, Athanasios</subfield><subfield code="4">edt</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Online-Ausgabe</subfield><subfield code="z">978-3-540-71491-0</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Advanced microelectronics</subfield><subfield code="v">27</subfield><subfield code="w">(DE-604)BV012563021</subfield><subfield code="9">27</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-016524369</subfield></datafield></record></collection> |
genre | (DE-588)4143413-4 Aufsatzsammlung gnd-content |
genre_facet | Aufsatzsammlung |
id | DE-604.BV023340600 |
illustrated | Illustrated |
index_date | 2024-07-02T21:01:31Z |
indexdate | 2024-07-09T21:16:21Z |
institution | BVB |
isbn | 3540714901 9783540714903 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016524369 |
oclc_num | 166358185 |
open_access_boolean | |
owner | DE-29T |
owner_facet | DE-29T |
physical | XXII, 383 S. Ill., graph. Darst. 235 mm x 155 mm |
publishDate | 2007 |
publishDateSearch | 2007 |
publishDateSort | 2007 |
publisher | Springer |
record_format | marc |
series | Advanced microelectronics |
series2 | Advanced microelectronics |
spelling | Advanced gate stacks for high-mobility semiconductors A. Dimoulas ... (eds.) Berlin [u.a.] Springer 2007 XXII, 383 S. Ill., graph. Darst. 235 mm x 155 mm txt rdacontent n rdamedia nc rdacarrier Advanced microelectronics 27 Dielectrics Gate array circuits Materials Germanium compounds Metal oxide semiconductors Metal oxide semiconductors, Complementary Semiconductors Materials MOS (DE-588)4130209-6 gnd rswk-swf High-k-Dielektrikum (DE-588)7602833-1 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Germanium (DE-588)4135644-5 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content MOS (DE-588)4130209-6 s High-k-Dielektrikum (DE-588)7602833-1 s Germanium (DE-588)4135644-5 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s DE-604 Dimoulas, Athanasios edt Erscheint auch als Online-Ausgabe 978-3-540-71491-0 Advanced microelectronics 27 (DE-604)BV012563021 27 |
spellingShingle | Advanced gate stacks for high-mobility semiconductors Advanced microelectronics Dielectrics Gate array circuits Materials Germanium compounds Metal oxide semiconductors Metal oxide semiconductors, Complementary Semiconductors Materials MOS (DE-588)4130209-6 gnd High-k-Dielektrikum (DE-588)7602833-1 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Germanium (DE-588)4135644-5 gnd |
subject_GND | (DE-588)4130209-6 (DE-588)7602833-1 (DE-588)4150649-2 (DE-588)4135644-5 (DE-588)4143413-4 |
title | Advanced gate stacks for high-mobility semiconductors |
title_auth | Advanced gate stacks for high-mobility semiconductors |
title_exact_search | Advanced gate stacks for high-mobility semiconductors |
title_exact_search_txtP | Advanced gate stacks for high-mobility semiconductors |
title_full | Advanced gate stacks for high-mobility semiconductors A. Dimoulas ... (eds.) |
title_fullStr | Advanced gate stacks for high-mobility semiconductors A. Dimoulas ... (eds.) |
title_full_unstemmed | Advanced gate stacks for high-mobility semiconductors A. Dimoulas ... (eds.) |
title_short | Advanced gate stacks for high-mobility semiconductors |
title_sort | advanced gate stacks for high mobility semiconductors |
topic | Dielectrics Gate array circuits Materials Germanium compounds Metal oxide semiconductors Metal oxide semiconductors, Complementary Semiconductors Materials MOS (DE-588)4130209-6 gnd High-k-Dielektrikum (DE-588)7602833-1 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Germanium (DE-588)4135644-5 gnd |
topic_facet | Dielectrics Gate array circuits Materials Germanium compounds Metal oxide semiconductors Metal oxide semiconductors, Complementary Semiconductors Materials MOS High-k-Dielektrikum Drei-Fünf-Halbleiter Germanium Aufsatzsammlung |
volume_link | (DE-604)BV012563021 |
work_keys_str_mv | AT dimoulasathanasios advancedgatestacksforhighmobilitysemiconductors |