Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006): Vancouver, Canada, 13 - 17 August 2006
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2007
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| Schriftenreihe: | Physica status solidi : C, Current topics in solid state physics
4,5 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Einzelaufnahme eines Zs.-Heftes |
| Beschreibung: | S. 1588 - 1766 Ill., graph. Darst. |
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| 245 | 1 | 0 | |a Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006) |b Vancouver, Canada, 13 - 17 August 2006 |c guest ed.: Martin Walther |
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| 490 | 0 | |a Physica status solidi : C, Current topics in solid state physics |v 4,5 | |
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Datensatz im Suchindex
| _version_ | 1804137650945261568 |
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| adam_text | CURRENT TOPICS IN SOLID STATE PHYSICS EDITORIAL BOARD MARTIN S. BRANDT,
GARCHING MARILIA J. CALDAS, SAOE PAULO AXEL HOFFMANN, BERLIN MICHIO
KONDO, TSUKUBA SHUIT-TONG LEE, HONG KONG ANDREW R. LEITER), PORT
ELIZABETH ANITA LLOYD-SPETZ, UENKOEPING PABLO ORDEJOEN, BARCELONA PEDRO P.
PRIETO, CALI JOHN ROBERTSON, CAMBRIDGE MICHAEL S. SHUR, TROY TADEUSZ
SUSKI, WARSAW MARTIN STUTZMANN, GARCHING MARIA C. TAMARGO, NEW YORK JOHN
I. B. WILSON, EDINBURGH MARTIN N. WYBOURNE, HANOVER EDITOR-IN-CHIEF
MARTIN STUTZMANN WALTER SCHOTTKY INSTITUT, TECHNISCHE UNIVERSITAET
MUENCHEN, AM COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28
91-27 37; E-MAIL: STUTZ@WSI.TUM.DE REGIONAL EDITORS MARTIN S. BRANDT
WALTER-SCHOTTKY-INSTITUT, TECHNISCHE UNIVERSITAET MUENCHEN, AM
COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28 91-27 37;
E-MAIL: MBRANDT@PHYSIK.TU-MUENCHEN.DE SHUIT-TONG LEE CENTRE OF
SUPER-DIAMOND AND ADVANCED FILMS (COSDAF) AND DEPARTMENT OF PHYSICS AND
MATERIALS SCIENCE CITY UNIVERSITY OF HONG KONG, 83 TAT CHEE AVENUE,
KOWLOON, HONG KONG SAR FAX: +8 52-27 84 46 96; E-MAIL:
ST.LEE@CITYU.EDU.HK PABLO ORDEJOEN INSTITUT DE CIENCIA DE MATERIALS DE
BARCELONA - CSIC CAMPUS DE LA U.A.B., 08193 BELLATERRA, BARCELONA, SPAIN
FAX: +34 93-5 80 57 29; E-MAIL: ORDEJON@ICMAB.ES MICHAEL S. SHUR
ELECTRICAL, COMPUTER, AND SYSTEMS ENGINEERING DEPARTMENT AND PHYSICS
DEPARTMENT, RENSSELAER POLYTECHNIC INSTITUTE, 110 8TH STREET, TROY, NY
12180, USA FAX: +1 518-276 2990; E-MAIL: SHURM@RPI.EDU JOHN I. B. WILSON
DEPARTMENT OF PHYSICS, HERIOT WATT UNIVERSITY, RICCARTON, EDINBURGH EH14
4AS, UK FAX: +44 (0) 1 31 -4 51 31 36; E-MAIL: J.I.B.WILSON@HW.AC.UK 4 5
2007 WILEY-VCH MANAGING EDITOR STEFAN HILDEBRANDT EDITORIAL OFFICE,
WILEY-VCH VERLAG GMBH & CO. KGAA, BUEHRINGSTRASSE 10, 13086 BERLIN,
GERMANY FAX: +49 (0) 30-47 03 13 34; E-MAIL: PSS@WILEY-VCH.DE CONTENTS
FUELL TEXT ON OUR HOMEPAGE AT: HTTP://WWW.PSS-C.COM PAPERS PRESENTED AT
THE 33RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS-2006)
VANCOUEVER, CARIAEDA, 13-17 AUGUST 2006 GUEST EDITOR : MAJTFN WALTHER
OPTOELECTRONIC DEVICES ROOM TEMPERATURE SB-BASED MID-INFRARED VCSELS
(INVITED) F. GENTY, L. CERUTTI, A. GARNACHE, A. OUVRARD, A. PERONA, P.
GRECH, D. ROMANINI, AND F. CHEVRIER 1591-1596 BARRIER- AND IN-WELL
PUMPED GASB-BASED 2.3 UM VECSELS J. WAGNER, N. SCHULZ, M. RATTUNDE, C.
RITZENTHALER, C. MANZ, C. WILD, AND K. KOEHLER 1597-1600 INCREASED POWER
CONVERSION EFFICIENCY THROUGH PHOTON RECYCLING IN QUANTUM WELL LASERS
J.-B. WANG AND Y.-H. ZHANG 1601-1604 INGAN/GAN NANOPILLAR-ARRAY LIGHT
EMITTING DIODES C. J. NEUFELD, C. SCHAAKE, M. GRUNDMANN, N. A.
FICHTENBAUM, S. KELLER, AND U. K. MISHRA 1605-1608 VERTICAL PIN
ULTRAVIOLET PHOTODETECTORS BASED ON 4H-SIC HOMOEPILAYERS X. F. LIU, G.
S. SUN, J. M. LI, J. NING, Y. M. ZHAO, M. C. LUO, L. WANG, W. S. ZHAO,
ANDY. P. ZENG 1609-1612 HIGH RESPONSIVITY ULTRAVIOLET PHOTODETECTOR
BASED ON CRACK-FREE GAN ON SI(L 11) XIAOYAN WANG, XIAOLIANG WANG, BAOZHU
WANG, HONGLING XIAO, HONGXIN LIU, JUNXI WANG, YIPING ZENG, AND JINMIN LI
1613-1616 HIGH FREQUENCY MODULATION EFFECTS ON THE RELATIVE INTENSITY
NOISE PROPERTIES OF 405 NM INALGAN LASER DIODES JONG CHANG YI AND HYUNG
UK CHO 1617-1620 GAN/ALN ELECTRO-OPTICAL MODULATOR PROTOTYPE AT
TELECOMMUNICATION WAVELENGTHS E. BAUMANN, F. R. GIORGETTA, D.
HOFSTETTER, F. GUILLOT, S. LECONTE, E. BELLET-AMALRIC, AND E. MONROY
1621-1624 IR/PT SCHOTTKY CONTACT OXIDATION FOR NITRIDE-BASED SCHOTTKY
BARRIER DIODES P. C. CHANG, C. L. YU, C. H. LIU, S. J. CHANG, Y. K SU,
R. W. CHUANG, AND Y. J. CHIU . . . . 1625-1628 LIGHT EXTRACTION STUDY OF
LED USING RAY TRACING COMPUTER SIMULATION OLEKSIY SHMATOV 1629-1632
COMPREHENSIVE MODELLING OF RESONANT-CAVITY LIGHT-EMITTING DIODE Z. Q. LI
AND Z. M. SIMON LI 1633-1636 TWO-DIMENSIONAL SIMULATION OF GALNP/GAAS/GE
TRIPLE JUNCTION SOLAR CELL Z. Q. LI, Y. G. XIAO, AND Z. M. SIMON LI
1637-1640 DYNAMIC DRIFT-DIFFUSION SIMULATION OF INP/INGAAS SAGCM APD Y.
G. XIAO, Z. Q. LI, AND Z. M. SIMON LI 1641-1645 1588 CONTENTS
REFLECTIVITY OF DEEP-ETCHED INGAAS-INP WAVEGUIDE BRAGG REFLECTORS H.M.
H. CHONG, W. K. TAN, ANDA. C. BRYCE 1646-1648 ELECTROABSORPTION
MODULATORS ON WAVEGUIDE MICRO-RING CAVITY RESONATORS WITH SELF-ALIGNED
TOTAL INTERNAL REFLECTORS JONG CHANG YI, DOO GUN KIM, YOUNGCHUL CHUNG,
AND NADIR DAGLI 1649-1652 ELECTRONIC DEVICES SIMULATION AND MEASUREMENT
OF THE SELF-HEATING IN GAN HFETS (INVITED) S. P. MCALISTER 1653-1657
PERFORMANCE COMPARISON OF CU AND NI GATES FOR DEEP SUBMICROMETER
ALGAN/GAN HFETS H. F. SUN, D. W. DISANTO, AND C. R. BOLOGNESI 1658-1661
A STUDY ON INFLUENCE OF MICROPIPES IN SIC SUBSTRATE ON OVERGROWN
ALGAN/GAN HEMT DC CHARACTERISTICS HYUNGJIN BANG, TAKESHI MITANI,
HIROYUKI SAZAWA, SHINICHI NAKASHIMA, KOJI HIRATA, MASAYOSHI KOSAKI, AND
HAJIME OKUMURA 1662-1666 220 GHZ LOW-NOISE AMPLIFIER MMICS AND MODULES
BASED ON A HIGH PERFORMANCE 50 NM METAMORPHIC HEMT TECHNOLOGY A.
TESSMANN, A. LEUTHER, H. MASSLER, M. RIESSLE, M. KURI, M. ZINK, AND W.
REINERT 1667-1670 ENHANCEMENT MODE HIGH MOBILITY N-MOSFET ON GALLIUM
ARSENIDE SUBSTRATE K. RAJAGOPALAN, J. ABROKWAH, R. DROOPAD, AND M.
PASSLACK 1671-1674 TWO-DIMENSIONAL SIMULATION OF TYPE-II INP/GAASSB/INP
DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS N. G. M. TAO, H. G. LIU, AND
C. R BOLOGNESI 1675-1679 IMPROVED INP-BASED DOUBLE HETEROJUNCTION
BIPOLAR TRANSISTORS Y. S. LIN, J. H. HUANG, AND C. H. HO 1680-1684
EPITAXY AND CHARACTERIZATION HYDROGEN-ASSISTED MOLECULAR-BEAM EPITAXY OF
ZNO LAYERS ON ZN-POLAR ZNO H. SUZUKI, T. MINEGISHI, S. H. PARK, M. W.
CHO, AND T. YAO 1685-1688 GROWTH OF NON-POLAR (1120) AND SEMI-POLAR
(1126) A1N AND GAN FILMS ON THE R-PLANE SAPPHIRE R. CHANDRASEKARAN, A.
S. OZEAN, D. DENIZ, K. F. LUDWIG, AND T. D. MOUSTAKAS 1689-1693 PROCESS
SIMULATION OFP-DOPING IN GAN AND RELATED GROUP III NITRIDES Y. J. ZHOU,
Z. Q. LI, A. EL BOUKILI, AND Z. M. SIMON LI . 1694-1697 INTRINSIC
IRREVERSIBILITY IN SEMICONDUETOR LIGHT EMISSION D. DING, S. R. JOHNSON,
J.-B. WANG, S.-Q. YU, AND Y.-H. ZHANG 1698-1701 SHORT-PERIOD INAS/GASB
SUPERLATTICES FOR MID-INFRARED PHOTODETECTORS H. J. HAUGAN, F.
SZMULOWICZ, G. J. BROWN, B. ULLRICH, S. R. MUNSHI, J. C. WICKERT, AND D.
W. STOKES 1702-1706 BISMUTH INCORPORATION IN GAAS^BI* GROWN BY MOLECULAR
BEAM EPITAXY WITH IN-SITU LIGHT SCATTERING E. C. YOUNG, M. B. WHITWICK,
T. TIEDJE, AND D. A. BEATON 1707-1710 VALENCE BAND ANTICROSSING IN
MISMATCHED III-V SEMICONDUETOR ALLOYS K. ALBERI, J. WU, W. WALUKIEWICZ,
K. M. YU, O. D. DUBON, S. P. WATKINS, C. X. WANG, X. LIU, Y.-J. CHO, AND
J. K. FURDYNA 1711-1714 CONTENTS 1589 STRUCTURAL CHARACTERIZATION OF
MGO/C-AL 2 0 3 INTERFACES T. MINEGISHI, T. HANADA, H. SUZUKI, Z.
VASHAEI, D. C. OH, K. SUMITANI, O. SAKATA, M. W. CHO, AND T. YAO
1715-1718 GAN FILMS DEPOSITED ON (11 L)SI BY CS-MBD WITH RE-EVAPORATION
ENHANCEMENT TECHNIQUE FOR UV LIGHT-EMITTING DEVICES MASATOSHI ARAI,
KOICHI SUGIMOTO, SHINICHI EGAWA, TAICHI BABA, AND TOHRU HONDA 1719-1722
CHARACTERISTICS OF ELECTRON BEAM-EVAPORATED HIGH A-TIO^ THIN FILMS ON
N-GAAS YUTAKA OYAMA, TAKEO OHNO, TAIJI SATO, AND JUN-ICHI NISHIZAWA
1723-1726 HOMOGENEITY ASSESSMENT OF LARGE-DIAMETER III-V COMPOUND
SEMICONDUCTOR SUBSTRATES BY NEAR-INFRARED TRANSMITTANCE MEASUREMENT
YUSUKE INOUE, TAKUYA KITAMOTO, MASAYOSHI YAMADA, AND TOMOHIRO KAWASE
1727-1730 ULTRAFAST NONLINEAR OPTICAL RESPONSE OF WEAKLY CONFINED
EXCITONS IN GAAS THIN FILMS O. KOJIMA, T. ISU, J. ISHI-HAYASE, M.
SASAKI, AND M. TSUCHIYA 1731-1734 DISLOCATION-INDUCED DEEP LEVELS IN ELO
INP REVEALED BY POINT CONTACT PHOTOCAPACITANCE MEASUREMENTS YUTAKA
OYAMA, TOSHIHIRO KIMURA, AND JUN-ICHI NISHIZAWA 1735-1738 BLUE-SHIFT OF
PHOSPHOROUS-IMPLANTED INGAAS/INGAASP MQW LASER STRUCTURES BY TWO-STEP
ANNEALS YOUNG TAE BYUN, KYOUNG SUN CHOI, AND SUN HO KIM 1739-1742
NANOSTRUCTURES AND SPINTRONICS INVESTIGATIONS OF INSB-BASED QUANTUM DOTS
GROWN BY MOLECULAR-BEAM EPITAXY N. DEGUFFROY, V. TASCO, A. N. BARANOV,
B. SATPATI, A. TRAMPERT, M. DUNAEVSKI, A. TITKOV, F. GENTY, AND E.
TOURNIE 1743-1746 FABRICATION OF POROUS ZNO NANOSTRUCTURES AND
MORPHOLOGY CONTROL SANG HYUN LEE, HYUN JUNG LEE, HIROKI GOTO, MEONG-WHAN
CHO, AND TAKAFUMI YAO 1747-1750 UNDERSTANDING QUANTUM DOTS: OVERHEATING
OF THE LO-PHONON MODES K. KRAL 1751-1754 2D-PATTERNED FERROMAGNETIC
III-MN-V SEMICONDUCTORS FOR PLANAR SPINTRONICS R. FARSHCHI, R. V.
CHOPDEKAR, Y. SUZUKI, P. D. ASHBY, I. D. SHARP, J. W. BEEMAN, E. E.
HALLER, AND O. D. DUBON 1755-1758 STUDY OF NUCLEAR QUADRUPOLAR
INTERACTION USING A NOVEL ALL-ELECTRICAL GAAS NMR DEVICE T. OTA, N.
KUMADA, G YUSA, S. MIYASHITA, AND Y. HIRAYAMA 1759-1762 MICROMAGNETIC
PROPERTIES OF EPITAXIAL MNAS FILMS ON GAAS SURFACES THORSTEN HESJEDAL,
ROMAN ENGEL-HERBERT, DANIEL M. SCHAADT, AND KLAUS H. PLOOG 1763-1766 I
PHYSICA STATUS SOLIDI (C) IS INDEXED IN CAMBRIDGE SCIENTIFIC ABSTRACTS;
CSA TECHNOLOGY RESEARCH DATABASE (CSA/CIG); CHEMICAL ABSTRACTS
SERVICE/SCIFINDER (ACS); COMPENDEX (ELSEVIER); FIZ KARLSRUHE DATABASES
(FIZ KARLSRUHE); GOOGLE SCHOLAR; INSPEC; PHYSICS ABSTRACTS (IET); ISI
INDEX TO SCIENTIFIC & TECHNICAL PROCEEDINGS; PASCAL DATABASE
(INIST/CNRS); SCOPUS (ELSEVIER); VINITI (ALL-RUSSIAN INSTITUTE OF
SCIENCE & TECHNOLOGICAL INFORMATION). DOI: THE FASTEST WAY TO FIND AN
ARTICLE ONLINE IS THE DIGITAL OBJECT IDENTIFIER (DOI). DOLS ARE PRINTED
IN THE HEADER OF THE FIRST PAGE OF EVERY ARTICLE. ON THE WWW, ONE CAN
FIND AN ARTICLE FOR EXAMPLE WITH A DOI OF 10.1002/PSSC.200306190 AT
HTTP://DX.DOI.ORG/10.1002/PSSC.200306190. PLEASE USE THE DOI OF THE
ARTICLE TO LINK FROM YOUR HOME PAGE TO THE ARTICLES IN WILEY
INTERSCIENCE. THE DOI IS A SYSTEM FOR THE PERSISTENT IDENTIFICATION OF
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|
| adam_txt |
CURRENT TOPICS IN SOLID STATE PHYSICS EDITORIAL BOARD MARTIN S. BRANDT,
GARCHING MARILIA J. CALDAS, SAOE PAULO AXEL HOFFMANN, BERLIN MICHIO
KONDO, TSUKUBA SHUIT-TONG LEE, HONG KONG ANDREW R. LEITER), PORT
ELIZABETH ANITA LLOYD-SPETZ, UENKOEPING PABLO ORDEJOEN, BARCELONA PEDRO P.
PRIETO, CALI JOHN ROBERTSON, CAMBRIDGE MICHAEL S. SHUR, TROY TADEUSZ
SUSKI, WARSAW MARTIN STUTZMANN, GARCHING MARIA C. TAMARGO, NEW YORK JOHN
I. B. WILSON, EDINBURGH MARTIN N. WYBOURNE, HANOVER EDITOR-IN-CHIEF
MARTIN STUTZMANN WALTER SCHOTTKY INSTITUT, TECHNISCHE UNIVERSITAET
MUENCHEN, AM COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28
91-27 37; E-MAIL: STUTZ@WSI.TUM.DE REGIONAL EDITORS MARTIN S. BRANDT
WALTER-SCHOTTKY-INSTITUT, TECHNISCHE UNIVERSITAET MUENCHEN, AM
COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49 (0) 89-28 91-27 37;
E-MAIL: MBRANDT@PHYSIK.TU-MUENCHEN.DE SHUIT-TONG LEE CENTRE OF
SUPER-DIAMOND AND ADVANCED FILMS (COSDAF) AND DEPARTMENT OF PHYSICS AND
MATERIALS SCIENCE CITY UNIVERSITY OF HONG KONG, 83 TAT CHEE AVENUE,
KOWLOON, HONG KONG SAR FAX: +8 52-27 84 46 96; E-MAIL:
ST.LEE@CITYU.EDU.HK PABLO ORDEJOEN INSTITUT DE CIENCIA DE MATERIALS DE
BARCELONA - CSIC CAMPUS DE LA U.A.B., 08193 BELLATERRA, BARCELONA, SPAIN
FAX: +34 93-5 80 57 29; E-MAIL: ORDEJON@ICMAB.ES MICHAEL S. SHUR
ELECTRICAL, COMPUTER, AND SYSTEMS ENGINEERING DEPARTMENT AND PHYSICS
DEPARTMENT, RENSSELAER POLYTECHNIC INSTITUTE, 110 8TH STREET, TROY, NY
12180, USA FAX: +1 518-276 2990; E-MAIL: SHURM@RPI.EDU JOHN I. B. WILSON
DEPARTMENT OF PHYSICS, HERIOT WATT UNIVERSITY, RICCARTON, EDINBURGH EH14
4AS, UK FAX: +44 (0) 1 31 -4 51 31 36; E-MAIL: J.I.B.WILSON@HW.AC.UK 4 5
2007 WILEY-VCH MANAGING EDITOR STEFAN HILDEBRANDT EDITORIAL OFFICE,
WILEY-VCH VERLAG GMBH & CO. KGAA, BUEHRINGSTRASSE 10, 13086 BERLIN,
GERMANY FAX: +49 (0) 30-47 03 13 34; E-MAIL: PSS@WILEY-VCH.DE CONTENTS
FUELL TEXT ON OUR HOMEPAGE AT: HTTP://WWW.PSS-C.COM PAPERS PRESENTED AT
THE 33RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS-2006)
VANCOUEVER, CARIAEDA, 13-17 AUGUST 2006 GUEST EDITOR': MAJTFN WALTHER
OPTOELECTRONIC DEVICES ROOM TEMPERATURE SB-BASED MID-INFRARED VCSELS
(INVITED) F. GENTY, L. CERUTTI, A. GARNACHE, A. OUVRARD, A. PERONA, P.
GRECH, D. ROMANINI, AND F. CHEVRIER 1591-1596 BARRIER- AND IN-WELL
PUMPED GASB-BASED 2.3 UM VECSELS J. WAGNER, N. SCHULZ, M. RATTUNDE, C.
RITZENTHALER, C. MANZ, C. WILD, AND K. KOEHLER 1597-1600 INCREASED POWER
CONVERSION EFFICIENCY THROUGH PHOTON RECYCLING IN QUANTUM WELL LASERS
J.-B. WANG AND Y.-H. ZHANG 1601-1604 INGAN/GAN NANOPILLAR-ARRAY LIGHT
EMITTING DIODES C. J. NEUFELD, C. SCHAAKE, M. GRUNDMANN, N. A.
FICHTENBAUM, S. KELLER, AND U. K. MISHRA 1605-1608 VERTICAL PIN
ULTRAVIOLET PHOTODETECTORS BASED ON 4H-SIC HOMOEPILAYERS X. F. LIU, G.
S. SUN, J. M. LI, J. NING, Y. M. ZHAO, M. C. LUO, L. WANG, W. S. ZHAO,
ANDY. P. ZENG 1609-1612 HIGH RESPONSIVITY ULTRAVIOLET PHOTODETECTOR
BASED ON CRACK-FREE GAN ON SI(L 11) XIAOYAN WANG, XIAOLIANG WANG, BAOZHU
WANG, HONGLING XIAO, HONGXIN LIU, JUNXI WANG, YIPING ZENG, AND JINMIN LI
1613-1616 HIGH FREQUENCY MODULATION EFFECTS ON THE RELATIVE INTENSITY
NOISE PROPERTIES OF 405 NM INALGAN LASER DIODES JONG CHANG YI AND HYUNG
UK CHO 1617-1620 GAN/ALN ELECTRO-OPTICAL MODULATOR PROTOTYPE AT
TELECOMMUNICATION WAVELENGTHS E. BAUMANN, F. R. GIORGETTA, D.
HOFSTETTER, F. GUILLOT, S. LECONTE, E. BELLET-AMALRIC, AND E. MONROY
1621-1624 IR/PT SCHOTTKY CONTACT OXIDATION FOR NITRIDE-BASED SCHOTTKY
BARRIER DIODES P. C. CHANG, C. L. YU, C. H. LIU, S. J. CHANG, Y. K SU,
R. W. CHUANG, AND Y. J. CHIU . . . . 1625-1628 LIGHT EXTRACTION STUDY OF
LED USING RAY TRACING COMPUTER SIMULATION OLEKSIY SHMATOV 1629-1632
COMPREHENSIVE MODELLING OF RESONANT-CAVITY LIGHT-EMITTING DIODE Z. Q. LI
AND Z. M. SIMON LI 1633-1636 TWO-DIMENSIONAL SIMULATION OF GALNP/GAAS/GE
TRIPLE JUNCTION SOLAR CELL Z. Q. LI, Y. G. XIAO, AND Z. M. SIMON LI
1637-1640 DYNAMIC DRIFT-DIFFUSION SIMULATION OF INP/INGAAS SAGCM APD Y.
G. XIAO, Z. Q. LI, AND Z. M. SIMON LI 1641-1645 1588 CONTENTS
REFLECTIVITY OF DEEP-ETCHED INGAAS-INP WAVEGUIDE BRAGG REFLECTORS H.M.
H. CHONG, W. K. TAN, ANDA. C. BRYCE 1646-1648 ELECTROABSORPTION
MODULATORS ON WAVEGUIDE MICRO-RING CAVITY RESONATORS WITH SELF-ALIGNED
TOTAL INTERNAL REFLECTORS JONG CHANG YI, DOO GUN KIM, YOUNGCHUL CHUNG,
AND NADIR DAGLI 1649-1652 ELECTRONIC DEVICES SIMULATION AND MEASUREMENT
OF THE SELF-HEATING IN GAN HFETS (INVITED) S. P. MCALISTER 1653-1657
PERFORMANCE COMPARISON OF CU AND NI GATES FOR DEEP SUBMICROMETER
ALGAN/GAN HFETS H. F. SUN, D. W. DISANTO, AND C. R. BOLOGNESI 1658-1661
A STUDY ON INFLUENCE OF MICROPIPES IN SIC SUBSTRATE ON OVERGROWN
ALGAN/GAN HEMT DC CHARACTERISTICS HYUNGJIN BANG, TAKESHI MITANI,
HIROYUKI SAZAWA, SHINICHI NAKASHIMA, KOJI HIRATA, MASAYOSHI KOSAKI, AND
HAJIME OKUMURA 1662-1666 220 GHZ LOW-NOISE AMPLIFIER MMICS AND MODULES
BASED ON A HIGH PERFORMANCE 50 NM METAMORPHIC HEMT TECHNOLOGY A.
TESSMANN, A. LEUTHER, H. MASSLER, M. RIESSLE, M. KURI, M. ZINK, AND W.
REINERT 1667-1670 ENHANCEMENT MODE HIGH MOBILITY N-MOSFET ON GALLIUM
ARSENIDE SUBSTRATE K. RAJAGOPALAN, J. ABROKWAH, R. DROOPAD, AND M.
PASSLACK 1671-1674 TWO-DIMENSIONAL SIMULATION OF TYPE-II INP/GAASSB/INP
DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS N. G. M. TAO, H. G. LIU, AND
C. R BOLOGNESI 1675-1679 IMPROVED INP-BASED DOUBLE HETEROJUNCTION
BIPOLAR TRANSISTORS Y. S. LIN, J. H. HUANG, AND C. H. HO 1680-1684
EPITAXY AND CHARACTERIZATION HYDROGEN-ASSISTED MOLECULAR-BEAM EPITAXY OF
ZNO LAYERS ON ZN-POLAR ZNO H. SUZUKI, T. MINEGISHI, S. H. PARK, M. W.
CHO, AND T. YAO 1685-1688 GROWTH OF NON-POLAR (1120) AND SEMI-POLAR
(1126) A1N AND GAN FILMS ON THE R-PLANE SAPPHIRE R. CHANDRASEKARAN, A.
S. OZEAN, D. DENIZ, K. F. LUDWIG, AND T. D. MOUSTAKAS 1689-1693 PROCESS
SIMULATION OFP-DOPING IN GAN AND RELATED GROUP III NITRIDES Y. J. ZHOU,
Z. Q. LI, A. EL BOUKILI, AND Z. M. SIMON LI . 1694-1697 INTRINSIC
IRREVERSIBILITY IN SEMICONDUETOR LIGHT EMISSION D. DING, S. R. JOHNSON,
J.-B. WANG, S.-Q. YU, AND Y.-H. ZHANG 1698-1701 SHORT-PERIOD INAS/GASB
SUPERLATTICES FOR MID-INFRARED PHOTODETECTORS H. J. HAUGAN, F.
SZMULOWICZ, G. J. BROWN, B. ULLRICH, S. R. MUNSHI, J. C. WICKERT, AND D.
W. STOKES 1702-1706 BISMUTH INCORPORATION IN GAAS^BI* GROWN BY MOLECULAR
BEAM EPITAXY WITH IN-SITU LIGHT SCATTERING E. C. YOUNG, M. B. WHITWICK,
T. TIEDJE, AND D. A. BEATON 1707-1710 VALENCE BAND ANTICROSSING IN
MISMATCHED III-V SEMICONDUETOR ALLOYS K. ALBERI, J. WU, W. WALUKIEWICZ,
K. M. YU, O. D. DUBON, S. P. WATKINS, C. X. WANG, X. LIU, Y.-J. CHO, AND
J. K. FURDYNA 1711-1714 CONTENTS 1589 STRUCTURAL CHARACTERIZATION OF
MGO/C-AL 2 0 3 INTERFACES T. MINEGISHI, T. HANADA, H. SUZUKI, Z.
VASHAEI, D. C. OH, K. SUMITANI, O. SAKATA, M. W. CHO, AND T. YAO
1715-1718 GAN FILMS DEPOSITED ON (11 L)SI BY CS-MBD WITH RE-EVAPORATION
ENHANCEMENT TECHNIQUE FOR UV LIGHT-EMITTING DEVICES MASATOSHI ARAI,
KOICHI SUGIMOTO, SHINICHI EGAWA, TAICHI BABA, AND TOHRU HONDA 1719-1722
CHARACTERISTICS OF ELECTRON BEAM-EVAPORATED HIGH A-TIO^ THIN FILMS ON
N-GAAS YUTAKA OYAMA, TAKEO OHNO, TAIJI SATO, AND JUN-ICHI NISHIZAWA
1723-1726 HOMOGENEITY ASSESSMENT OF LARGE-DIAMETER III-V COMPOUND
SEMICONDUCTOR SUBSTRATES BY NEAR-INFRARED TRANSMITTANCE MEASUREMENT
YUSUKE INOUE, TAKUYA KITAMOTO, MASAYOSHI YAMADA, AND TOMOHIRO KAWASE
1727-1730 ULTRAFAST NONLINEAR OPTICAL RESPONSE OF WEAKLY CONFINED
EXCITONS IN GAAS THIN FILMS O. KOJIMA, T. ISU, J. ISHI-HAYASE, M.
SASAKI, AND M. TSUCHIYA 1731-1734 DISLOCATION-INDUCED DEEP LEVELS IN ELO
INP REVEALED BY POINT CONTACT PHOTOCAPACITANCE MEASUREMENTS YUTAKA
OYAMA, TOSHIHIRO KIMURA, AND JUN-ICHI NISHIZAWA 1735-1738 BLUE-SHIFT OF
PHOSPHOROUS-IMPLANTED INGAAS/INGAASP MQW LASER STRUCTURES BY TWO-STEP
ANNEALS YOUNG TAE BYUN, KYOUNG SUN CHOI, AND SUN HO KIM 1739-1742
NANOSTRUCTURES AND SPINTRONICS INVESTIGATIONS OF INSB-BASED QUANTUM DOTS
GROWN BY MOLECULAR-BEAM EPITAXY N. DEGUFFROY, V. TASCO, A. N. BARANOV,
B. SATPATI, A. TRAMPERT, M. DUNAEVSKI, A. TITKOV, F. GENTY, AND E.
TOURNIE 1743-1746 FABRICATION OF POROUS ZNO NANOSTRUCTURES AND
MORPHOLOGY CONTROL SANG HYUN LEE, HYUN JUNG LEE, HIROKI GOTO, MEONG-WHAN
CHO, AND TAKAFUMI YAO 1747-1750 UNDERSTANDING QUANTUM DOTS: OVERHEATING
OF THE LO-PHONON MODES K. KRAL 1751-1754 2D-PATTERNED FERROMAGNETIC
III-MN-V SEMICONDUCTORS FOR PLANAR SPINTRONICS R. FARSHCHI, R. V.
CHOPDEKAR, Y. SUZUKI, P. D. ASHBY, I. D. SHARP, J. W. BEEMAN, E. E.
HALLER, AND O. D. DUBON 1755-1758 STUDY OF NUCLEAR QUADRUPOLAR
INTERACTION USING A NOVEL ALL-ELECTRICAL GAAS NMR DEVICE T. OTA, N.
KUMADA, G YUSA, S. MIYASHITA, AND Y. HIRAYAMA 1759-1762 MICROMAGNETIC
PROPERTIES OF EPITAXIAL MNAS FILMS ON GAAS SURFACES THORSTEN HESJEDAL,
ROMAN ENGEL-HERBERT, DANIEL M. SCHAADT, AND KLAUS H. PLOOG 1763-1766 I
PHYSICA STATUS SOLIDI (C) IS INDEXED IN CAMBRIDGE SCIENTIFIC ABSTRACTS;
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| author_corporate | International Symposium on Compound Semiconductors Vancouver, British Columbia |
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| author_facet | International Symposium on Compound Semiconductors Vancouver, British Columbia |
| author_sort | International Symposium on Compound Semiconductors Vancouver, British Columbia |
| building | Verbundindex |
| bvnumber | BV023315194 |
| ctrlnum | (OCoLC)255631471 (DE-599)GBV52803071X |
| format | Conference Proceeding Book |
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| illustrated | Illustrated |
| index_date | 2024-07-02T20:51:50Z |
| indexdate | 2024-07-09T21:15:40Z |
| institution | BVB |
| institution_GND | (DE-588)6515568-3 |
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| spelling | International Symposium on Compound Semiconductors 33 2006 Vancouver, British Columbia Verfasser (DE-588)6515568-3 aut Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006) Vancouver, Canada, 13 - 17 August 2006 guest ed.: Martin Walther Weinheim Wiley-VCH 2007 S. 1588 - 1766 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physica status solidi : C, Current topics in solid state physics 4,5 Einzelaufnahme eines Zs.-Heftes Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Verbindungshalbleiter (DE-588)4062623-4 s DE-604 Walther, Martin Sonstige oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016499400&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006) Vancouver, Canada, 13 - 17 August 2006 Verbindungshalbleiter (DE-588)4062623-4 gnd |
| subject_GND | (DE-588)4062623-4 (DE-588)1071861417 |
| title | Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006) Vancouver, Canada, 13 - 17 August 2006 |
| title_auth | Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006) Vancouver, Canada, 13 - 17 August 2006 |
| title_exact_search | Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006) Vancouver, Canada, 13 - 17 August 2006 |
| title_exact_search_txtP | Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006) Vancouver, Canada, 13 - 17 August 2006 |
| title_full | Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006) Vancouver, Canada, 13 - 17 August 2006 guest ed.: Martin Walther |
| title_fullStr | Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006) Vancouver, Canada, 13 - 17 August 2006 guest ed.: Martin Walther |
| title_full_unstemmed | Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006) Vancouver, Canada, 13 - 17 August 2006 guest ed.: Martin Walther |
| title_short | Papers presented at 33rd International Symposium on Compound Semiconductors (ISCS-2006) |
| title_sort | papers presented at 33rd international symposium on compound semiconductors iscs 2006 vancouver canada 13 17 august 2006 |
| title_sub | Vancouver, Canada, 13 - 17 August 2006 |
| topic | Verbindungshalbleiter (DE-588)4062623-4 gnd |
| topic_facet | Verbindungshalbleiter Konferenzschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016499400&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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