Nitrides with nonpolar surfaces: growth, properties, and devices
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2008
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| Beschreibung: | Literaturangaben |
| Beschreibung: | XXXIX, 418 S. Ill., graph. Darst. |
| ISBN: | 9783527407682 3527407685 |
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| 245 | 1 | 0 | |a Nitrides with nonpolar surfaces |b growth, properties, and devices |c ed. by Tanya Paskova |
| 264 | 1 | |a Weinheim |b Wiley-VCH |c 2008 | |
| 300 | |a XXXIX, 418 S. |b Ill., graph. Darst. | ||
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| 500 | |a Literaturangaben | ||
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| 650 | 4 | |a Nitrides | |
| 650 | 4 | |a Nitrides |x Electric properties | |
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Datensatz im Suchindex
| _version_ | 1805090418187042816 |
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| adam_text |
NITRIDES WITH NONPOLAR SURFACES GROWTH, PROPERTIES, AND DEVICES EDITED
BY TCRNYA PASKOVA WILEY- VCH WILEY-VCH VERLAG GMBH & CO. KGAA CONTENTS
PREFACE XV LIST OF CONTRIBUTORS XIX COLOR PLATES XXIII INTRODUCTION 1
NITRIDE MATERIALS AND DEVICES WITH NONPOLAR SURFACES: DEVELOP- MENT AND
PROSPECTS 3 TANYA PASKOVA 1.1 INTRODUCTION 3 1.2 HISTORICAL SURVEY OF
NONPOLAR NITRIDE GROWTH ACHIEVEMENTS 5 1.3 NONPOLAR NITRIDES TODAY - KEY
PROPERTIES AND CHALLENGES 11 1.3.1 MORPHOLOGY 11 1.3.2 MICROSTRUCTURE 13
1.3.3 STRAIN 14 1.3.4 OPTICAL PROPERTIES 18 1.3.5 OPTICAL PHONONS 21
1.3.6 ELECTRICAL PROPERTIES 22 1.4 NONPOLAR AND SEMIPOLAR NITRIDE-BASED
DEVICES TODAY 23 1.5 PROSPECTS IN THE DEVELOPMENT OF NONPOLAR NITRIDES
AND DEVICES 24 1.6 SUMMARY 25 ACKNOWLEDGMENTS 25 REFERENCES 26 PART I
CROWTH 2 CROWTH OF PLANAR AND REDUCED-DEFECT DENSITY NONPOLAR CAN FILMS
BY HYDRIDE VAPOR PHASE EPITAXY 33 BENJAMIN A. HASKEIL, PAUL T. FINI, AND
SHUJI NAKAMURA 2.1 INTRODUCTION 33 NITRIDES WITH NONPOLAR SURFACES.
GROWTH, PROPERTIES, AND DEVICES. EDITED BY TANYA PASKOVA COPYRIGHT
2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM ISBN: 978-3-527-40768-2
VI CONTENTS 2.2 PLANAR A-PLANE GAN GROWTH 35 2.3 LATERAL EPITAXIAL
OVERGROWTH OF SS-PLANE GAN FILMS 39 2.4 PLANAR M-PLANE GAN HETEROEPITAXY
44 2.5 LATERAL EPITAXIAL OVERGROWTH OF M-PLANE GAN 48 2.6 CONCLUSION 50
REFERENCES 50 3 NONPOLAR CAN QUASI-WAFERS SLICED FROM BULK CAN CRYSTALS
CROWN BY HIGH-PRESSURE SOLUTION AND HVPE METHODS 53 IZABELLA GRZEGORY,
HENRYK TEISSEYRE, BOLESLAW LUCZNIK, B. PASTUSZKA, MICHAL BOOEKOWSKI, AND
SYLWESTER POROWSKI 3.1 INTRODUCTION 53 3.2 BULK CRYSTALLIZATION OF GAN
54 3.2.1 SEED CRYSTALS 54 3.2.2 BULK CRYSTALLIZATION OF GAN BY HVPE ON
SMALL SEEDS 55 3.2.3 HVPE OF GAN ON PLATELET-SHAPED SEEDS 56 3.2.4 HVPE
OF GAN ON NEEDLE-SHAPED SEEDS 60 3.3 NONPOLAR QUANTUM STRUCTURES 62
3.3.1 GAN/ALGAN QUANTUM STRUCTURES GROWN BY PA MOLECULAR BEAM EPITAXY 62
3.3.2 OPTICAL PROPERTIES OF NONPOLAR STRUCTURES GROWN ON GAN QUASI-
WAFERS SLICED FROM BULK GAN CRYSTALS 63 3.4 SUMMARY 70 ACKNOWLEDGMENT 70
REFERENCES 70 4 HETEROEPITAXIAL GROWTH OF NONPOLAR-FACE ALN ON SIC
SUBSTRATES BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY 73 JUN SUDA 4.1
INTRODUCTION 73 4.2 THE CRYSTALLINE STRUCTURE OF ALN AND SIC 75 4.3
ALN/6H-SIC(LL00) 78 4.4 ALN/6H-SIC(1120) 78 4.5 ALN/4H-SIC (1120) 82 4.6
REDUCING STRUCRURAL DEFECT DENSITIES IN 4H-A1N 86 4.7 ALN/4H-SIC (1100)
92 4.8 PROPERTIES OF 4H-A1N 94 4.9 NONPOLAR ALGAN AND ALGAN/ALN
HETEROSTRUCTURES 95 4.10 CONCLUSION 96 ACKNOWLEDGMENTS 97 REFERENCES 97
CONTENTS VII 5 METALORGANIC VAPOR PHASE EPITAXIAL CROWTH OF NONPOLAR
AI(CA,LN)N FILMS ON LATTICE-MISMATCHED SUBSTRATES 101 HIROSHI AMUNO,
TAKESHI KAWASHIMA, DAISUKE IIDA, MASATAKA IMURA, MOTOAKI IWAYA, SATOSHI
KAMIYAMA, AND ISAMU AKASAKI 5.1 INTRODUCTION 101 5.2 GROWTH AND
PROPERTIES OF A-PLANE GAN ON R-PLANE SAPPHIRE 103 5.3 GROWTH AND
PROPERTIES OFM-PLANE GAN ONM-PLANE SIC 106 5.4 GROWTH OF GAN ON
SEMIPOLAR (3038) 4H-SIC SUBSTRATE 108 5.5 REDUCTION OF DISLOCATION
DENSITY AND STACKING-FAULT DENSITY BY SIDEWALL SEEDED EPITAXIAL LATERAL
OVERGROWTH 108 5.6 CONDUCTIVITY CONTROL OF NONPOLAR GAN 112 5.6.1
N-TYPEGAN 112 5.6.2 JJ-TYPEGAN 113 5.7 HETEROSTRUCTURES 114 5.7.1
GALNN/GANMQWS 114 5.7.2 ALGAN/GAN SINGLE HETEROSTRUCTURE 115 5.8
CHARACTERIZATION OF VISIBLE LEDS ON NONPOLAR GAN 116 5.9 SUMMARY 117
ACKNOWLEDGMENTS 118 REFERENCES 118 FURTHER READING 118 6 GAN FILMS AND
QUANTUM WELLS WITH NONPOLAR SURFACES: CROWTH AND STRUCTURAL PROPERTIES
119 OLIVER BRANDT 6.1 INTRODUCTION 119 6.2 SUBSTRATES 120 6.2.1 Y-UAL0 2
120 6.2.1.1 PROPERTIES AND M ERITS 120 6.2.1.2 DRAWBACKS 121 6.2.1.3
ORIENTATION RELATIONSHIP AND MICROSTRUCTURE 121 6.2.2 M-PLANE 6H-SIC 122
6.2.2.1 PROPERTIES AND MERITS 122 6.2.2.2 DRAWBACKS 123 6.2.2.3
ORIENTATION RELATIONSHIP AND MICROSTRUCTURE 123 6.3 OPTIMIZATION OFTHE
HETEROEPITAXY OF GAN FILMS ON Y-LIALO 2 (100) 124 6.3.1 SUBSTRATE
PREPARATION AND IMPACT OFPOLARITY 124 6.3.2 IMPACT OF NUCLEATION
CONDITIONS ON PHASE PURITY 126 6.3.2.1 GROWTH 126 6.3.2.2 RHEED 127
6.3.2.3 XRD 127 6.3.2.4 IMPACT OF NUCLEATION CONDITIONS ON PHASE PURITY
127 VIII CONTENTS 6.3.3 INFLUENCE OF NUCLEATION TEMPERATURE ON SURFACE
QUALITY 129 6.3.3.1 ROUGHNESS VERSUS T N 129 6.3.3.2 TEM 130 6.4 GA
ADSORPTION AND DESORPTION KINETICS 131 6.4.1 SURFACE RECONSTRUCTION 131
6.4.1.1 RELATION BETWEEN GA COVERAGE AND SURFACE RECONSTRUCTIONS 131
6.4.2 GA ADSORPTION/DESORPTION KINETICS 133 6.5 M-PLANE (IN,GA)N/GAN
MQWS 139 6.5.1 IN INCORPORATION AND SURFACE SEGREGATION 139 6.5.1.1
GROWTH 140 6.5.1.2 HRXRD 140 6.5.1.3 SIMS 142 6.5.2 RECOMBINATION
MECHANISM 143 6.5.2.1 CW-PL 143 6.5.2.2 ANOMALOUS TEMPERATURE-DEPENDENT
PL WIDTH 144 6.5.2.3 PL TRANSITION ENERGY AS A FUNCTION OF WELL
THICKNESS 145 6.5.2.4 RECOMBINATION DYNAMICS 246 6.6 CONCLUSION AND
OUTLOOK 149 ACKNOWLEDGMENTS 150 REFERENCES 150 PART II PROPERTIES 7 GAN
FILMS AND (LN,CA)N/CAN MULTIPLE QUANTUM WELLS WITH NONPOLAR SURFACES:
OPTICAL POLARIZATION PROPERTIES 155 HOLGER GRAHN 7.1 INTRODUCTION 155
7.2 EXPERIMENTAL DETAILS 157 7. 3 THE EFFECT OF STRAIN ON THE EXCITON
TRANSITION ENERGIES AND OSCILLATOR STRENGTHS 159 7.3.1 UNSTRAINED GAN
WITH POLAR AND NONPOLAR ORIENTATIONS 159 7.3.2 STRAIN DEPENDENCE FOR
POLAR ORIENTATIONS OF GAN 162 7.3.3 STRAIN DEPENDENCE FOR NONPOLAR
ORIENTATIONS OF GAN 163 7.4 OPTICAL POLARIZATION ANISOTROPY IN GAN FILMS
AND (IN,GA)N/GAN MULTIPLE QUANTUM WELLS 165 7.4.1 STRAINED GAN FILMS
WITH DIFFERENT NONPOLAR ORIENTATIONS 165 7.4.2 POLARIZED
PHOTOLUMINESCENCE SPECTROSCOPY OF M-PLANE GAN FILMS 169 7 A3 POLARIZED
PHOTOLUMINESCENCE SPECTROSCOPY OF M-PLANE (IN,GA) N/GAN MULTIPLE QUANTUM
WELLS 172 7.5 APPLICATIONS OF OPTICAL POLARIZATION ANISOTROPY 175 7.5.1
STATIC AND DYNAMIC POLARIZATION FILTERING 175 7.5.2
POLARIZATION-SENSITIVEPHOTODETECTORS 176 CONTENTS IX 7.5.3 VERY
NARROW-BAND PHOTODETECTORS 178 7.5.4 POLARIZED LIGHT EMITTERS 180 7.6
SUMMARY 181 ACKNOWLEDGMENTS 182 REFERENCES 182 8 LUMINESCENCE OF GAN
LAYERS GROWN IN NONPOLAR DIRECTIONS 185 PLANTEN P. PASKOV AND BO MONEMAR
8.1 INTRODUCTION 185 8.2 LUMINESCENCE IN GAN LAYERS GROWN ALONG THE
[0001] DIRECTION (C-PLANE LAYERS) 186 8.3 LUMINESCENCE IN GAN LAYERS
GROWN ALONG THE [1120] DIRECTION (A- PLANE LAYERS) 189 8.3.1 A-PLANE GAN
LAYERS GROWN ON R-PLANE SAPPHIRE 189 8.3.2 A-PLANE GAN LAYERS GROWN ON
A-PLANE SIC 203 8.4 LUMINESCENCE IN GAN GROWN ALONG THE [1100] DIRECTION
(M-PLANE LAYERS) 204 8.4.1 M-PLANE GAN LAYERS GROWN ONY-LIAL02 204 8.4.2
M-PLANE GAN LAYERS GROWN ON M-PLANE SIC 207 8.5 LUMINESCENCE IN GAN
LAYERS GROWN ALONG SEMIPOLAR DIRECTIONS 209 8.6 LUMINESCENCE IN GAN WITH
NONPOLAR SURFACES SLICED FROM BOULES GROWN ALONG THE C AXIS 211 8.7
SUMMARY 212 ACKNOWLEDGMENTS 213 REFERENCES 214 9 OPTICAL PHONONS IN
A-PLANE GAN UNDER ANISOTROPIE STRAIN 219 VANYA DARAKCHIEVA, TANYA
PASKOVA, AND MATHIAS SCHUBERT 9.1 INTRODUCTION 219 9.2 BACKGROUND 221
9.2.1 STRUCRURE OF WURTZITE GAN 221 9.2.2 PHONONS IN WURTZITE GAN 222
9.2.3 LATTICE DEFORMATION AND STRAIN 223 9.2.3.1 BIAXIAL ISOTROPIE
STRAIN IN GAN 224 9.2.3.2 ANISOTROPIE STRAIN IN GAN 225 9.2.4 PHONON
DEFORMATION POTENTIALS 226 9.2.5 RAMAN SCATTERING SPECTROSCOPY 226 9.2.6
INFRARED SPECTROSCOPIC ELLIPSOMETRY 229 9.2.6.1 STANDARD ELLIPSOMETRY
230 9.2.6.2 GENERALIZED ELLIPSOMETRY 231 9.2.6.3 ELLIPSOMETRY DATA
ANALYSIS 231 9.3 ANISOTROPIE STRAIN IN A-PLANE GAN 234 X CONTENTS 9.3.1
ASSESSMENT OF ANISOTROPIE STRAIN COMPONENTS 234 9.3.2 ANISOTROPIE
LATTICE DISTORTION 235 9.4 PHONONS IN GAN LAYERS UNDER ANISOTROPIE
STRAIN 238 9.4.1 STRAIN-FREE FREQUENCIES OF GAN PHONONS 238 9.4.2
INFRARED ANISOTROPY 239 9.4.2.1 INFRARED DIELECTRIC TENSOR 239 9.4.3
PHONON SPLITTING 242 9.4.4 PHONON DEFORMATION POTENTIALS 245 9.4.4.1
ANISOTROPIE PHONON DEFORMATION POTENTIALS 245 9.4.4.2 AI (TO) AND E T
(LO) PHONON DEFORMATION POTENTIALS 246 9.4.5 QUANTUM DOTS 249 9.5
SUMMARY AND OUTLOOK 250 ACKNOWLEDGMENTS 251 REFERENCES 252 10 DEFECTS
FORMED IN NONPOLAR GAN GROWN ON SIC AND AL 2 0 3 AND THEIR REDUCTION IN
PENDEO-EPITAXIAL AND LATERALLY OVERGROWN GAN LAYERS 255 ZUZANNA
LILIENTAL-WEBER AND DMITRI NIKDAJ ZAKHAROV 10.1 INTRODUCTION 255 10.2
DEFECTS FORMED IN NONPOLAR (1120) A-PLANE GAN GROWN ON (1120) 4H-SIC 256
10.2.1 GROWTH PROCEDURE 256 10.2.2 DEFECT CHARACTERIZATION 257 10.2.3
WHY PLANAR DEFECTS ARE FORMED IN THE LAYERS GROWN ON NONPOLAR SURFACES
265 10.3 DEFECT REDUCTION 269 10.3.1 GROWTH OFTHICK LAYERS 269 10.3.2
LATERAL OVERGROWTH 270 10.3.3 PENDEO-EPITAXIAL LAYERS 273 10.4
APPLICATION OF PENDEO-EPITAXY FOR THE LAYERS GROWN ON NONPOLAR
SUBSTRATES 274 10.5 APPLICATION OF LATERAL OVERGROWTH FOR A-PLANE GAN
LAYERS GROWN ON THE R PLANE OF AL 2 O3 278 10.6 SUMMARY 283
ACKNOWLEDGMENTS 284 REFERENCES 284 11 DEFECTS AND INTERFACIAL STRUCTURE
OF A-PLANE GAN ON R-PLANE SAPPHIRE 287 ROLAND KROGER 11.1 INTRODUCTION
287 11.1.1 CONVENTIONS 288 CONTENTS 11.1.2 LATTICE MISMATCH 289 11.2
DEFECTS IN A-PLANE GAN ON R-PLANE SAPPHIRE 291 11.2.1 POINT DEFECTS AND
IMPURITIES 291 11.2.1.1 POINT DEFECTS 292 11.2.1.2 IMPURITIES 293 11.2.2
DISLOCATIONS 294 11.2.2.1 DISLOCATION TYPES IN A-GAN 297 11.2.2.2
DISLOCATION FORMATION ENERGY 298 11.2.2.3 IMPACT OF ANISOTROPY 299
11.2.3 PLANAR DEFECTS 301 11.2.3.1 BASAL PLANE STACKING FAULTS 302
11.2.3.2 ANALYSISOF BASAL PLANE STACKING FAULTS 303 11.2.3.3 PRISMATIC
AND PYRAMIDAL STACKING FAULTS 304 11.2.4 VOLUME DEFECTS 307 11.2.4.1
NANOPIPES 307 11.2.4.2 VOIDS 308 11.2.5 SURFACE DEFECTS 308 11.3
INTERFACIAL STRUCTURE 309 11.3.1 EPITAXIAL RELATIONSHIP 309 11.3.2
INTERFACIAL STRUCTURE _ 310 11.3.2.1 HRTEMALONGTHE[1100] GAN ZONEAXIS
311 11.3.2.2 HRTEM ALONG THE [0001] GAN ZONE AXIS 312 11.3.3 MODEL OF
INTERFACIAL STRUCTURE 313 11.4 SUMMARY 315 ACKNOWLEDGMENTS 316
REFERENCES 316 FURTHER READING 318 PART IM NONPOLAR HETEROSTRUCTURES AND
DEVICES 12 NONPOLAR NITRIDE HETEROSTRUCTURES AND DEVICES GROWN BY MOCVD
321 ARPAN CHAKRABORTY, SHIGEFASA CHICHIBU, AND UMESH MISHRA 12.1
INTRODUCTION 321 12.2 NONPOLAR INGAN/GAN MULTIPLE-QUANTUM WELLS 322
12.2.1 GROWTH AND PROPERTIES OFA-PLANE INGAN/GAN MQWS 322 12.2.1.1
EXPERIMENT 322 12.2.1.2 RESULTS 323 12.2.1.3 SUMMARY 330 12.2.2 GROWTH
AND PROPERTIES OF M-PLANE INGAN/GAN MQWS 330 12.2.2.1 EXPERIMENT 330
12.2.2.2 RESULTS 331 12.2.2.3 SUMMARY 336 XII CONTENTS 12.3 NONPOLAR
LIGHT-EMITTING DIODES 336 12.3.1 INTRODUCTION AND BACKGROUND 336 12.3.2
GROWTH AND CHARACTERIZATION OF A-PLANE INGAN/GAN LEDS 337 12.3.2.1
EXPERIMENT 337 12.3.2.2 RESULTS 338 12.3.2.3 WAVELENGTH SHIRT IN
NONPOLAR A-PLANE LEDS 342 12.3.3 GROWTH AND CHARACTERIZATION OF M-PLANE
IN GAN/GAN LEDS 343 12.3.3.1 EXPERIMENTS 343 12.3.3.2 RESULTS 344
12.3.3.3 DC AND PULSED PERFORMANCE OF M-PLANE PACKAGED LED LAMPS 347
12.3.3.4 TRANSMISSION THROUGH FREE-STANDING M-PLANE SUBSTRATE 349 12.3.4
COMPARISON OF POWER PERFORMANCE OF A-PLANE AND M-PLANE LEDS 350 12.4
POLARIZED LIGHT EMISSION 352 12.5 RECENT NONPOLAR OPTICAL DEVICE RESULTS
OVERVIEW 352 12.6 CONCLUSIONS 353 ACKNOWLEDGEMENTS 354 REFERENCES 354 13
GROWTH, STRUCTURAL, AND OPTICAL PROPERTIES OF A-PLANE CAN QUAN- TUM DOTS
IN AIN 357 SEBASTIEN FOUNTA, FABIAN ROL, BRUNO GAYRAL, AND BRUNO DAUDIN
13.1 INTRODUCTION 357 13.2 EPITAXIAL GROWTH OF NONPOLAR NITRIDE LAYERS
358 13.2.1 SUBSTRATES AND GROWTH CONDITIONS 358 13.2.2 ANISOTROPY OF
MBE-GROWN AIN A-PLANE SURFACE 359 13.3 GROWTH OF NONPOLAR GANQDS 360
13.3.1 IMPACT OF GROWTH PARAMETERS: NOMINAL GAN QUANTITY 360 13.3.2
MORPHOLOGY OF A-PLANE GANQDS 362 13.3.3 STRAIN STATE OF A-PLANE GAN QDS
365 13.4 OPTICAL PROPERTIES OF (11-20) GAN QDS 371 13.4.1 OPTICAL
SPECTROSCOPY ON ENSEMBLES OF QDS 371 13.4.2 SINGLE QD SPECTROSCOPY 374
13.4.3 RADIATIVE DECAY TIME ANALYSIS 380 13.5 CONCLUSION 382
ACKNOWLEDGMENTS 382 REFERENCES 383 CONTENTS XIII 14 SEMIPOLAR INCAN/CAN
QUANTUM WELLS FOR HIGHLY FUNCTIONAL LIGHT EMITTERS 385 MITSURU FUNATO,
YOICHI KAWAKAMI, YUKIO NARUKAWA, AND TAKASHI MUKAI ' 14.1 INTRODUCTION
385 14.2 SEMIPOLAR {1122} PLANES 387 \ 14.3 MICROFACET QWS 388 14.3.1
FABRICATION AND FUNDAMENTAL PROPERTIES OF MICROFACET QWS 388 14.3.2
EMISSION PROPERTIES OF {1122} MICROFACET QWS 392 14.3.3 MULTICOLOR
EMISSION TOWARD TAILOR-MADE SOLID-STATE LIGHTING 395 14.3.3.1 MULTICOLOR
EMISSION BASED ON INTRA-FACET VARIATIONS OF THE IN COMPOSITION 395
14.3.3.2 MULTICOLOR EMISSION BASED ON INTER-FACET VARIATIONS OF THE QW
STRUCTURES 398 14.4 PLANAR QWS AND LEDS 400 14.4.1 MOVPE GROWTH AND
FUNDAMENTAL PROPERTIES OF GAN AND IN- GAN/GAN QWS 401 14.4.2 SEMIPOLAR
LEDS 405 14.5 SUMMARY 409 ACKNOWLEDGMENTS 409 REFERENCES 410 INDEX 413 |
| adam_txt |
NITRIDES WITH NONPOLAR SURFACES GROWTH, PROPERTIES, AND DEVICES EDITED
BY TCRNYA PASKOVA WILEY- VCH WILEY-VCH VERLAG GMBH & CO. KGAA CONTENTS
PREFACE XV LIST OF CONTRIBUTORS XIX COLOR PLATES XXIII INTRODUCTION 1
NITRIDE MATERIALS AND DEVICES WITH NONPOLAR SURFACES: DEVELOP- MENT AND
PROSPECTS 3 TANYA PASKOVA 1.1 INTRODUCTION 3 1.2 HISTORICAL SURVEY OF
NONPOLAR NITRIDE GROWTH ACHIEVEMENTS 5 1.3 NONPOLAR NITRIDES TODAY - KEY
PROPERTIES AND CHALLENGES 11 1.3.1 MORPHOLOGY 11 1.3.2 MICROSTRUCTURE 13
1.3.3 STRAIN 14 1.3.4 OPTICAL PROPERTIES 18 1.3.5 OPTICAL PHONONS 21
1.3.6 ELECTRICAL PROPERTIES 22 1.4 NONPOLAR AND SEMIPOLAR NITRIDE-BASED
DEVICES TODAY 23 1.5 PROSPECTS IN THE DEVELOPMENT OF NONPOLAR NITRIDES
AND DEVICES 24 1.6 SUMMARY 25 ACKNOWLEDGMENTS 25 REFERENCES 26 PART I
CROWTH 2 CROWTH OF PLANAR AND REDUCED-DEFECT DENSITY NONPOLAR CAN FILMS
BY HYDRIDE VAPOR PHASE EPITAXY 33 BENJAMIN A. HASKEIL, PAUL T. FINI, AND
SHUJI NAKAMURA 2.1 INTRODUCTION 33 NITRIDES WITH NONPOLAR SURFACES.
GROWTH, PROPERTIES, AND DEVICES. EDITED BY TANYA PASKOVA COPYRIGHT
2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM ISBN: 978-3-527-40768-2
VI CONTENTS 2.2 PLANAR A-PLANE GAN GROWTH 35 2.3 LATERAL EPITAXIAL
OVERGROWTH OF SS-PLANE GAN FILMS 39 2.4 PLANAR M-PLANE GAN HETEROEPITAXY
44 2.5 LATERAL EPITAXIAL OVERGROWTH OF M-PLANE GAN 48 2.6 CONCLUSION 50
REFERENCES 50 3 NONPOLAR CAN QUASI-WAFERS SLICED FROM BULK CAN CRYSTALS
CROWN BY HIGH-PRESSURE SOLUTION AND HVPE METHODS 53 IZABELLA GRZEGORY,
HENRYK TEISSEYRE, BOLESLAW LUCZNIK, B. PASTUSZKA, MICHAL BOOEKOWSKI, AND
SYLWESTER POROWSKI 3.1 INTRODUCTION 53 3.2 BULK CRYSTALLIZATION OF GAN
54 3.2.1 SEED CRYSTALS 54 3.2.2 BULK CRYSTALLIZATION OF GAN BY HVPE ON
SMALL SEEDS 55 3.2.3 HVPE OF GAN ON PLATELET-SHAPED SEEDS 56 3.2.4 HVPE
OF GAN ON NEEDLE-SHAPED SEEDS 60 3.3 NONPOLAR QUANTUM STRUCTURES 62
3.3.1 GAN/ALGAN QUANTUM STRUCTURES GROWN BY PA MOLECULAR BEAM EPITAXY 62
3.3.2 OPTICAL PROPERTIES OF NONPOLAR STRUCTURES GROWN ON GAN QUASI-
WAFERS SLICED FROM BULK GAN CRYSTALS 63 3.4 SUMMARY 70 ACKNOWLEDGMENT 70
REFERENCES 70 4 HETEROEPITAXIAL GROWTH OF NONPOLAR-FACE ALN ON SIC
SUBSTRATES BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY 73 JUN SUDA 4.1
INTRODUCTION 73 4.2 THE CRYSTALLINE STRUCTURE OF ALN AND SIC 75 4.3
ALN/6H-SIC(LL00) 78 4.4 ALN/6H-SIC(1120) 78 4.5 ALN/4H-SIC (1120) 82 4.6
REDUCING STRUCRURAL DEFECT DENSITIES IN 4H-A1N 86 4.7 ALN/4H-SIC (1100)
92 4.8 PROPERTIES OF 4H-A1N 94 4.9 NONPOLAR ALGAN AND ALGAN/ALN
HETEROSTRUCTURES 95 4.10 CONCLUSION 96 ACKNOWLEDGMENTS 97 REFERENCES 97
CONTENTS VII 5 METALORGANIC VAPOR PHASE EPITAXIAL CROWTH OF NONPOLAR
AI(CA,LN)N FILMS ON LATTICE-MISMATCHED SUBSTRATES 101 HIROSHI AMUNO,
TAKESHI KAWASHIMA, DAISUKE IIDA, MASATAKA IMURA, MOTOAKI IWAYA, SATOSHI
KAMIYAMA, AND ISAMU AKASAKI 5.1 INTRODUCTION 101 5.2 GROWTH AND
PROPERTIES OF A-PLANE GAN ON R-PLANE SAPPHIRE 103 5.3 GROWTH AND
PROPERTIES OFM-PLANE GAN ONM-PLANE SIC 106 5.4 GROWTH OF GAN ON
SEMIPOLAR (3038) 4H-SIC SUBSTRATE 108 5.5 REDUCTION OF DISLOCATION
DENSITY AND STACKING-FAULT DENSITY BY SIDEWALL SEEDED EPITAXIAL LATERAL
OVERGROWTH 108 5.6 CONDUCTIVITY CONTROL OF NONPOLAR GAN 112 5.6.1
N-TYPEGAN 112 5.6.2 JJ-TYPEGAN 113 5.7 HETEROSTRUCTURES 114 5.7.1
GALNN/GANMQWS 114 5.7.2 ALGAN/GAN SINGLE HETEROSTRUCTURE 115 5.8
CHARACTERIZATION OF VISIBLE LEDS ON NONPOLAR GAN 116 5.9 SUMMARY 117
ACKNOWLEDGMENTS 118 REFERENCES 118 FURTHER READING 118 6 GAN FILMS AND
QUANTUM WELLS WITH NONPOLAR SURFACES: CROWTH AND STRUCTURAL PROPERTIES
119 OLIVER BRANDT 6.1 INTRODUCTION 119 6.2 SUBSTRATES 120 6.2.1 Y-UAL0 2
120 6.2.1.1 PROPERTIES AND M ERITS 120 6.2.1.2 DRAWBACKS 121 6.2.1.3
ORIENTATION RELATIONSHIP AND MICROSTRUCTURE 121 6.2.2 M-PLANE 6H-SIC 122
6.2.2.1 PROPERTIES AND MERITS 122 6.2.2.2 DRAWBACKS 123 6.2.2.3
ORIENTATION RELATIONSHIP AND MICROSTRUCTURE 123 6.3 OPTIMIZATION OFTHE
HETEROEPITAXY OF GAN FILMS ON Y-LIALO 2 (100) 124 6.3.1 SUBSTRATE
PREPARATION AND IMPACT OFPOLARITY 124 6.3.2 IMPACT OF NUCLEATION
CONDITIONS ON PHASE PURITY 126 6.3.2.1 GROWTH 126 6.3.2.2 RHEED 127
6.3.2.3 XRD 127 6.3.2.4 IMPACT OF NUCLEATION CONDITIONS ON PHASE PURITY
127 VIII CONTENTS 6.3.3 INFLUENCE OF NUCLEATION TEMPERATURE ON SURFACE
QUALITY 129 6.3.3.1 ROUGHNESS VERSUS T N 129 6.3.3.2 TEM 130 6.4 GA
ADSORPTION AND DESORPTION KINETICS 131 6.4.1 SURFACE RECONSTRUCTION 131
6.4.1.1 RELATION BETWEEN GA COVERAGE AND SURFACE RECONSTRUCTIONS 131
6.4.2 GA ADSORPTION/DESORPTION KINETICS 133 6.5 M-PLANE (IN,GA)N/GAN
MQWS 139 6.5.1 IN INCORPORATION AND SURFACE SEGREGATION 139 6.5.1.1
GROWTH 140 6.5.1.2 HRXRD 140 6.5.1.3 SIMS 142 6.5.2 RECOMBINATION
MECHANISM 143 6.5.2.1 CW-PL 143 6.5.2.2 ANOMALOUS TEMPERATURE-DEPENDENT
PL WIDTH 144 6.5.2.3 PL TRANSITION ENERGY AS A FUNCTION OF WELL
THICKNESS 145 6.5.2.4 RECOMBINATION DYNAMICS 246 6.6 CONCLUSION AND
OUTLOOK 149 ACKNOWLEDGMENTS 150 REFERENCES 150 PART II PROPERTIES 7 GAN
FILMS AND (LN,CA)N/CAN MULTIPLE QUANTUM WELLS WITH NONPOLAR SURFACES:
OPTICAL POLARIZATION PROPERTIES 155 HOLGER GRAHN 7.1 INTRODUCTION 155
7.2 EXPERIMENTAL DETAILS 157 7. 3 THE EFFECT OF STRAIN ON THE EXCITON
TRANSITION ENERGIES AND OSCILLATOR STRENGTHS 159 7.3.1 UNSTRAINED GAN
WITH POLAR AND NONPOLAR ORIENTATIONS 159 7.3.2 STRAIN DEPENDENCE FOR
POLAR ORIENTATIONS OF GAN 162 7.3.3 STRAIN DEPENDENCE FOR NONPOLAR
ORIENTATIONS OF GAN 163 7.4 OPTICAL POLARIZATION ANISOTROPY IN GAN FILMS
AND (IN,GA)N/GAN MULTIPLE QUANTUM WELLS 165 7.4.1 STRAINED GAN FILMS
WITH DIFFERENT NONPOLAR ORIENTATIONS 165 7.4.2 POLARIZED
PHOTOLUMINESCENCE SPECTROSCOPY OF M-PLANE GAN FILMS 169 7 A3 POLARIZED
PHOTOLUMINESCENCE SPECTROSCOPY OF M-PLANE (IN,GA) N/GAN MULTIPLE QUANTUM
WELLS 172 7.5 APPLICATIONS OF OPTICAL POLARIZATION ANISOTROPY 175 7.5.1
STATIC AND DYNAMIC POLARIZATION FILTERING 175 7.5.2
POLARIZATION-SENSITIVEPHOTODETECTORS 176 CONTENTS IX 7.5.3 VERY
NARROW-BAND PHOTODETECTORS 178 7.5.4 POLARIZED LIGHT EMITTERS 180 7.6
SUMMARY 181 ACKNOWLEDGMENTS 182 REFERENCES 182 8 LUMINESCENCE OF GAN
LAYERS GROWN IN NONPOLAR DIRECTIONS 185 PLANTEN P. PASKOV AND BO MONEMAR
8.1 INTRODUCTION 185 8.2 LUMINESCENCE IN GAN LAYERS GROWN ALONG THE
[0001] DIRECTION (C-PLANE LAYERS) 186 8.3 LUMINESCENCE IN GAN LAYERS
GROWN ALONG THE [1120] DIRECTION (A- PLANE LAYERS) 189 8.3.1 A-PLANE GAN
LAYERS GROWN ON R-PLANE SAPPHIRE 189 8.3.2 A-PLANE GAN LAYERS GROWN ON
A-PLANE SIC 203 8.4 LUMINESCENCE IN GAN GROWN ALONG THE [1100] DIRECTION
(M-PLANE LAYERS) 204 8.4.1 M-PLANE GAN LAYERS GROWN ONY-LIAL02 204 8.4.2
M-PLANE GAN LAYERS GROWN ON M-PLANE SIC 207 8.5 LUMINESCENCE IN GAN
LAYERS GROWN ALONG SEMIPOLAR DIRECTIONS 209 8.6 LUMINESCENCE IN GAN WITH
NONPOLAR SURFACES SLICED FROM BOULES GROWN ALONG THE C AXIS 211 8.7
SUMMARY 212 ACKNOWLEDGMENTS 213 REFERENCES 214 9 OPTICAL PHONONS IN
A-PLANE GAN UNDER ANISOTROPIE STRAIN 219 VANYA DARAKCHIEVA, TANYA
PASKOVA, AND MATHIAS SCHUBERT 9.1 INTRODUCTION 219 9.2 BACKGROUND 221
9.2.1 STRUCRURE OF WURTZITE GAN 221 9.2.2 PHONONS IN WURTZITE GAN 222
9.2.3 LATTICE DEFORMATION AND STRAIN 223 9.2.3.1 BIAXIAL ISOTROPIE
STRAIN IN GAN 224 9.2.3.2 ANISOTROPIE STRAIN IN GAN 225 9.2.4 PHONON
DEFORMATION POTENTIALS 226 9.2.5 RAMAN SCATTERING SPECTROSCOPY 226 9.2.6
INFRARED SPECTROSCOPIC ELLIPSOMETRY 229 9.2.6.1 STANDARD ELLIPSOMETRY
230 9.2.6.2 GENERALIZED ELLIPSOMETRY 231 9.2.6.3 ELLIPSOMETRY DATA
ANALYSIS 231 9.3 ANISOTROPIE STRAIN IN A-PLANE GAN 234 X CONTENTS 9.3.1
ASSESSMENT OF ANISOTROPIE STRAIN COMPONENTS 234 9.3.2 ANISOTROPIE
LATTICE DISTORTION 235 9.4 PHONONS IN GAN LAYERS UNDER ANISOTROPIE
STRAIN 238 9.4.1 STRAIN-FREE FREQUENCIES OF GAN PHONONS 238 9.4.2
INFRARED ANISOTROPY 239 9.4.2.1 INFRARED DIELECTRIC TENSOR 239 9.4.3
PHONON SPLITTING 242 9.4.4 PHONON DEFORMATION POTENTIALS 245 9.4.4.1
ANISOTROPIE PHONON DEFORMATION POTENTIALS 245 9.4.4.2 AI (TO) AND E T
(LO) PHONON DEFORMATION POTENTIALS 246 9.4.5 QUANTUM DOTS 249 9.5
SUMMARY AND OUTLOOK 250 ACKNOWLEDGMENTS 251 REFERENCES 252 10 DEFECTS
FORMED IN NONPOLAR GAN GROWN ON SIC AND AL 2 0 3 AND THEIR REDUCTION IN
PENDEO-EPITAXIAL AND LATERALLY OVERGROWN GAN LAYERS 255 ZUZANNA
LILIENTAL-WEBER AND DMITRI NIKDAJ ZAKHAROV 10.1 INTRODUCTION 255 10.2
DEFECTS FORMED IN NONPOLAR (1120) A-PLANE GAN GROWN ON (1120) 4H-SIC 256
10.2.1 GROWTH PROCEDURE 256 10.2.2 DEFECT CHARACTERIZATION 257 10.2.3
WHY PLANAR DEFECTS ARE FORMED IN THE LAYERS GROWN ON NONPOLAR SURFACES
265 10.3 DEFECT REDUCTION 269 10.3.1 GROWTH OFTHICK LAYERS 269 10.3.2
LATERAL OVERGROWTH 270 10.3.3 PENDEO-EPITAXIAL LAYERS 273 10.4
APPLICATION OF PENDEO-EPITAXY FOR THE LAYERS GROWN ON NONPOLAR
SUBSTRATES 274 10.5 APPLICATION OF LATERAL OVERGROWTH FOR A-PLANE GAN
LAYERS GROWN ON THE R PLANE OF AL 2 O3 278 10.6 SUMMARY 283
ACKNOWLEDGMENTS 284 REFERENCES 284 11 DEFECTS AND INTERFACIAL STRUCTURE
OF A-PLANE GAN ON R-PLANE SAPPHIRE 287 ROLAND KROGER 11.1 INTRODUCTION
287 11.1.1 CONVENTIONS 288 CONTENTS 11.1.2 LATTICE MISMATCH 289 11.2
DEFECTS IN A-PLANE GAN ON R-PLANE SAPPHIRE 291 11.2.1 POINT DEFECTS AND
IMPURITIES 291 11.2.1.1 POINT DEFECTS 292 11.2.1.2 IMPURITIES 293 11.2.2
DISLOCATIONS 294 11.2.2.1 DISLOCATION TYPES IN A-GAN 297 11.2.2.2
DISLOCATION FORMATION ENERGY 298 11.2.2.3 IMPACT OF ANISOTROPY 299
11.2.3 PLANAR DEFECTS 301 11.2.3.1 BASAL PLANE STACKING FAULTS 302
11.2.3.2 ANALYSISOF BASAL PLANE STACKING FAULTS 303 11.2.3.3 PRISMATIC
AND PYRAMIDAL STACKING FAULTS 304 11.2.4 VOLUME DEFECTS 307 11.2.4.1
NANOPIPES 307 11.2.4.2 VOIDS 308 11.2.5 SURFACE DEFECTS 308 11.3
INTERFACIAL STRUCTURE 309 11.3.1 EPITAXIAL RELATIONSHIP 309 11.3.2
INTERFACIAL STRUCTURE _ 310 11.3.2.1 HRTEMALONGTHE[1100] GAN ZONEAXIS
311 11.3.2.2 HRTEM ALONG THE [0001] GAN ZONE AXIS 312 11.3.3 MODEL OF
INTERFACIAL STRUCTURE 313 11.4 SUMMARY 315 ACKNOWLEDGMENTS 316
REFERENCES 316 FURTHER READING 318 PART IM NONPOLAR HETEROSTRUCTURES AND
DEVICES 12 NONPOLAR NITRIDE HETEROSTRUCTURES AND DEVICES GROWN BY MOCVD
321 ARPAN CHAKRABORTY, SHIGEFASA CHICHIBU, AND UMESH MISHRA 12.1
INTRODUCTION 321 12.2 NONPOLAR INGAN/GAN MULTIPLE-QUANTUM WELLS 322
12.2.1 GROWTH AND PROPERTIES OFA-PLANE INGAN/GAN MQWS 322 12.2.1.1
EXPERIMENT 322 12.2.1.2 RESULTS 323 12.2.1.3 SUMMARY 330 12.2.2 GROWTH
AND PROPERTIES OF M-PLANE INGAN/GAN MQWS 330 12.2.2.1 EXPERIMENT 330
12.2.2.2 RESULTS 331 12.2.2.3 SUMMARY 336 XII CONTENTS 12.3 NONPOLAR
LIGHT-EMITTING DIODES 336 12.3.1 INTRODUCTION AND BACKGROUND 336 12.3.2
GROWTH AND CHARACTERIZATION OF A-PLANE INGAN/GAN LEDS 337 12.3.2.1
EXPERIMENT 337 12.3.2.2 RESULTS 338 12.3.2.3 WAVELENGTH SHIRT IN
NONPOLAR A-PLANE LEDS 342 12.3.3 GROWTH AND CHARACTERIZATION OF M-PLANE
IN GAN/GAN LEDS 343 12.3.3.1 EXPERIMENTS 343 12.3.3.2 RESULTS 344
12.3.3.3 DC AND PULSED PERFORMANCE OF M-PLANE PACKAGED LED LAMPS 347
12.3.3.4 TRANSMISSION THROUGH FREE-STANDING M-PLANE SUBSTRATE 349 12.3.4
COMPARISON OF POWER PERFORMANCE OF A-PLANE AND M-PLANE LEDS 350 12.4
POLARIZED LIGHT EMISSION 352 12.5 RECENT NONPOLAR OPTICAL DEVICE RESULTS
OVERVIEW 352 12.6 CONCLUSIONS 353 ACKNOWLEDGEMENTS 354 REFERENCES 354 13
GROWTH, STRUCTURAL, AND OPTICAL PROPERTIES OF A-PLANE CAN QUAN- TUM DOTS
IN AIN 357 SEBASTIEN FOUNTA, FABIAN ROL, BRUNO GAYRAL, AND BRUNO DAUDIN
13.1 INTRODUCTION 357 13.2 EPITAXIAL GROWTH OF NONPOLAR NITRIDE LAYERS
358 13.2.1 SUBSTRATES AND GROWTH CONDITIONS 358 13.2.2 ANISOTROPY OF
MBE-GROWN AIN A-PLANE SURFACE 359 13.3 GROWTH OF NONPOLAR GANQDS 360
13.3.1 IMPACT OF GROWTH PARAMETERS: NOMINAL GAN QUANTITY 360 13.3.2
MORPHOLOGY OF A-PLANE GANQDS 362 13.3.3 STRAIN STATE OF A-PLANE GAN QDS
365 13.4 OPTICAL PROPERTIES OF (11-20) GAN QDS 371 13.4.1 OPTICAL
SPECTROSCOPY ON ENSEMBLES OF QDS 371 13.4.2 SINGLE QD SPECTROSCOPY 374
13.4.3 RADIATIVE DECAY TIME ANALYSIS 380 13.5 CONCLUSION 382
ACKNOWLEDGMENTS 382 REFERENCES 383 CONTENTS XIII 14 SEMIPOLAR INCAN/CAN
QUANTUM WELLS FOR HIGHLY FUNCTIONAL LIGHT EMITTERS 385 MITSURU FUNATO,
YOICHI KAWAKAMI, YUKIO NARUKAWA, AND TAKASHI MUKAI ' 14.1 INTRODUCTION
385 14.2 SEMIPOLAR {1122} PLANES 387 \ 14.3 MICROFACET QWS 388 14.3.1
FABRICATION AND FUNDAMENTAL PROPERTIES OF MICROFACET QWS 388 14.3.2
EMISSION PROPERTIES OF {1122} MICROFACET QWS 392 14.3.3 MULTICOLOR
EMISSION TOWARD TAILOR-MADE SOLID-STATE LIGHTING 395 14.3.3.1 MULTICOLOR
EMISSION BASED ON INTRA-FACET VARIATIONS OF THE IN COMPOSITION 395
14.3.3.2 MULTICOLOR EMISSION BASED ON INTER-FACET VARIATIONS OF THE QW
STRUCTURES 398 14.4 PLANAR QWS AND LEDS 400 14.4.1 MOVPE GROWTH AND
FUNDAMENTAL PROPERTIES OF GAN AND IN- GAN/GAN QWS 401 14.4.2 SEMIPOLAR
LEDS 405 14.5 SUMMARY 409 ACKNOWLEDGMENTS 409 REFERENCES 410 INDEX 413 |
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| index_date | 2024-07-02T20:44:41Z |
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| spelling | Nitrides with nonpolar surfaces growth, properties, and devices ed. by Tanya Paskova Weinheim Wiley-VCH 2008 XXXIX, 418 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Crystal growth Nitrides Nitrides Electric properties Polarität (DE-588)4126483-6 gnd rswk-swf Oberfläche (DE-588)4042907-6 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Nitride (DE-588)4171929-3 s Oberfläche (DE-588)4042907-6 s Polarität (DE-588)4126483-6 s DE-604 Paskova, Tanya (DE-588)134042514 edt text/html http://deposit.dnb.de/cgi-bin/dokserv?id=2982645&prov=M&dok_var=1&dok_ext=htm Inhaltstext http://d-nb.info/984873368/04 Inhaltsverzeichnis GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016480105&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Nitrides with nonpolar surfaces growth, properties, and devices Crystal growth Nitrides Nitrides Electric properties Polarität (DE-588)4126483-6 gnd Oberfläche (DE-588)4042907-6 gnd Nitride (DE-588)4171929-3 gnd |
| subject_GND | (DE-588)4126483-6 (DE-588)4042907-6 (DE-588)4171929-3 |
| title | Nitrides with nonpolar surfaces growth, properties, and devices |
| title_auth | Nitrides with nonpolar surfaces growth, properties, and devices |
| title_exact_search | Nitrides with nonpolar surfaces growth, properties, and devices |
| title_exact_search_txtP | Nitrides with nonpolar surfaces growth, properties, and devices |
| title_full | Nitrides with nonpolar surfaces growth, properties, and devices ed. by Tanya Paskova |
| title_fullStr | Nitrides with nonpolar surfaces growth, properties, and devices ed. by Tanya Paskova |
| title_full_unstemmed | Nitrides with nonpolar surfaces growth, properties, and devices ed. by Tanya Paskova |
| title_short | Nitrides with nonpolar surfaces |
| title_sort | nitrides with nonpolar surfaces growth properties and devices |
| title_sub | growth, properties, and devices |
| topic | Crystal growth Nitrides Nitrides Electric properties Polarität (DE-588)4126483-6 gnd Oberfläche (DE-588)4042907-6 gnd Nitride (DE-588)4171929-3 gnd |
| topic_facet | Crystal growth Nitrides Nitrides Electric properties Polarität Oberfläche Nitride |
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