Holdings: Porous silicon carbide and gallium nitride

Porous silicon carbide and gallium nitride: epitaxy, catalysis, and biotechnology applications

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Bibliographic Details
Format:	Book
Language:	English
Published:	Chichester [u.a.] Wiley 2008
Subjects:	Silicon carbide Gallium nitride Semiconductors Membran Siliciumcarbid Galliumnitrid Halbleitertechnologie
Online Access:	Publisher description Table of contents only Inhaltsverzeichnis
Item Description:	Includes bibliographical references and index
Physical Description:	XIV, 318 S. Ill., graph. Darst.
ISBN:	9780470517529

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245	1	0	\|a Porous silicon carbide and gallium nitride \|b epitaxy, catalysis, and biotechnology applications \|c Randall M. Feenstra ; Colin E. C. Wood [eds.]
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adam_text	POROUS SILICON CARBIDE AND GALLIUM NITRIDE EPITAXY, CATALYSIS, AND BIOTECHNOLOGY APPLICATIONS RANDALL M. FEENSTRA DEPARTMENT OF PHYSICS, CARNEGIE MELLON UNIVERSITY, PITTSBURGH, PENNSYLVANIA, USA COLIN E.C. WOOD ELECTRONICS DIVISION, US OFFICE OFNAVAL RESEARCH, ARLINGTON, VIRGINIA, USA JOHN WILEY & SONS, LTD CONTENTS PREFACE XI 1 POROUS SIC PREPARATION, CHARACTERIZATION AND MORPHOLOGY 1 1.1 INTRODUCTION 1 1.2 TRIANGULAER POROUS MORPHOLOGY IN N-TYPE 4H-SIC 2 1.2.1 CRYSTAL ANODIZATION 2 1.2.2 DESCRIPTION OF THE POROUS STRUCTURE 3 1.2.3 MODEL OF THE MORPHOLOGY 9 1.3 NANO-COLUMNAR PORE FORMATION IN 6H-SIC 15 1.3.1 EXPERIMENTAL 15 1.3.2 RESULTS 16 1.3.3 DISCUSSION 18 1.4 SUMMARY 26 ACKNOWLEDGEMENTS 27 REFERENCES 27 2 PROCESSING POROUS SIC: DIFFUSION, OXIDATION, CONTACT FORMATION 3 1 2.1 INTRODUCTION 31 2.2 FORMATION OF POROUS LAYER 32 2.3 DIFFUSION IN POROUS SIC 42 2.4 OXIDATION 47 2.5 CONTACTS TO POROUS SIC 49 ACKNOWLEDGEMENTS 53 REFERENCES 53 3 GROWTH OF SIC ON POROUS SIC BUFFER LAYERS 55 3.1 INTRODUCTIO N 55 3.2 SIC CVD GROWTH 57 CONTENTS 3.3 GROWTH OF 3C-SIC ON POROUS SI VIA COLD-WALL EPITAXY 58 3.3.1 GROWTH ON POROUS SI SUBSTRATES 58 3.3.2 GROWTH ON STABILIZED POROUS SI SUBSTRATES 62 3.4 GROWTH OF 3C-SIC ON POROUS 3C-SIC 64 3.4.1 GROWTH IN LPCVD COLD-WALL REACTOR 64 3.5 GROWTH OF 4H-SIC ON POROUS 4H-SIC 67 3.6 CONCLUSION 73 ACKNOWLEDGEMENTS 74 REFERENCES 74 PREPARATION AND PROPERTIES OF POROUS GAN FABRICATED BY METAL-ASSISTED ELECTROLESS ETCHING 77 4.1 INTRODUCTION 77 4.2 CREATION OF POROUS GAN BY ELECTROLESS ETCHING 78 4.3 MORPHOLOGY CHARACTERIZATION 80 4.3.1 POROUS GAN DERIVED FROM UNINTENTIONALLY DOPED FILMS 80 4.3.2 TRANSMISSION ELECTRON MICROSCOPY (TEM) CHARACTERIZATION 84 4.4 LUMINESCENCE OF POROUS GAN 85 4.4.1 CATHODOLUMINESCENCE (CL) OF POROUS GAN 86 4.4.2 PHOTOLUMINESCENCE (PL) OF POROUS GAN 88 4.5 RAMAN SPECTROSCOPY OF POROUS GAN 89 4.5.1 CHARACTERISTICS OF RAMAN SCATTERING IN GAN 89 4.5.2 RAMAN SPECTRA OF POROUS GAN EXCITED BELOW BAND GAP 91 4.6 SUMMARY AND CONCLUSIONS 95 ACKNOWLEDGEMENTS 95 REFERENCES 95 GROWTH OF GAN ON POROUS SIC BY MOLECULAR BEAM EPITAXY 101 5.1 INTRODUCTION 101 5.2 MORPHOLOGY AND PREPARATION OF POROUS SIC SUBSTRATES 104 5.2.1 POROUS SUBSTRATES 104 5.2.2 HYDROGEN ETCHING 105 CONTENTS VLL 5.3 MBE GROWTH OF GAN ON POROUS SIC SUBSTRATES 108 5.3.1 EXPERIMENTAL DETAILS 108 5.3.2 FILM STRUCTURE 110 5.3.3 FILM STRAIN 114 5.4 SUMMARY 116 ACKNOWLEDGEMENTS 117 REFERENCES 117 GAN LATERAL EPITAXY GROWTH USING POROUS SIN X , TIN* AND SIC 121 6.1 INTRODUCTION 121 6.2 EPITAXY OF GAN ON POROUS SIN* NETWORK 122 6.2.1 THREE-STEP GROWTH METHOD 123 6.2.2 STRUCTURAL AND OPTICAL CHARACTERIZATION 128 6.2.3 SCHOTTKY DIODES (SDS) ON UNDOPED GAN TEMPLATES 135 6.2.4 DEEP LEVEL TRANSITION SPECTRUM 138 6.3 EPITAXIAL LATERAL OVERGROWTH OF GAN ON POROUS TIN 140 6.3.1 FORMATION OF POROUS TIN 140 6.3.2 GROWTH OF GAN ON POROUS TIN 142 6.3.3 CHARACTERIZATION BY XRD 146 6.3.4 CHARACTERIZATION BY TEM 146 6.3.5 CHARACTERIZATION BY PL 152 6.4 GROWTH OF GAN ON POROUS SIC 154 6.4.1 FABRICATION OF POROUS SIC 156 6.4.2 GAN GROWTH ON HYDROGEN POLISHED POROUS SIC 157 6.4.3 GAN GROWTH ON CHEMICAL MECHANICAL POLISHED POROUS SIC 164 ACKNOWLEDGEMENTS 167 REFERENCES 167 HVPE GROWTH OF GAN ON POROUS SIC SUBSTRATES 171 7.1 INTRODUCTION 171 7.2 PSC SUBSTRATE FABRICATION AND PROPERTIES 172 7.2.1 FORMATION OF VARIOUS TYPES OF SPSC STRUCTURE 173 7.2.2 DENSE LAYER 177 7.2.3 MONITORING OF ANODIZATION PROCESS 178 VLLL CONTENTS 7.2.4 VACANCY MODEL OF PRIMARY PORE FORMATION 183 7.2.5 STABILITY OF SPSC UNDER POST-ANODIZATION TREATMENT 190 7.3 EPITAXIAL GROWTH OF GAN FILMS ON PSC SUBSTRATES 195 7.3.1 THE GROWTH AND ITS EFFECT ON THE STRUCTURE OF THE PSC SUBSTRATE 195 7.3.2 PROPERTIES OF THE GAN FILMS GROWN 198 7.4 SUMMARY 206 REFERENCES 207 DISLOCATION MECHANISMS IN GAN FILMS GROWN ON POROUS SUBSTRATES OR INTERLAYERS 213 8.1 INTRODUCTION 213 8.2 EXTENDED DEFECTS IN EPITAXIALLY GROWN GAN THIN LAYERS 214 8.3 DISLOCATION MECHANISMS IN CONVENTIONAL LATERAL EPITAXY OVERGROWTH OF GAN 217 8.4 GROWTH OF GAN ON POROUS SIC SUBSTRATES 220 8.5 GROWTH OF GAN ON POROUS SIN AND TIN INTERLAYERS 222 8.5.1 GAN GROWTH ON A TIN INTERLAYER 223 8.5.2 GAN GROWTH ON A SIN INTERLAYER 224 8.6 SUMMARY 226 ACKNOWLEDGEMENTS 227 REFERENCES 227 ELECTRICAL PROPERTIES OF POROUS SIC 231 9.1 INTRODUCTION 231 9.2 RESISTIVITY AND HALL EFFECT 232 9.3 DEEP LEVEL TRANSIENT SPECTROSCOPY 234 9.3.1 FUNDAMENTALS OF DLTS 234 9.3.2 METHOD OF SOLVING THE GENERAL EQUATION 236 9.4 SAMPLE CONSIDERATIONS 237 9.5 POTENTIAL ENERGY NEAR A PORE 238 9.6 DLTS DATA AND ANALYSIS 240 ACKNOWLEDGEMENTS 243 REFERENCES 243 MAGNETISM OF DOPED GAN NANOSTRUCTURES 245 10.1 INTRODUCTION 245 10.2 MN-DOPED GAN CRYSTAL 247 10.3 MN-DOPED GAN THIN FILMS 248 10.3.1 MN-DOPED GAN (1120) SURFACE 249 10.3.2 MN-DOPED GAN (1010) SURFACE_ 252 10.3.3 MNANDCCODOPEDINGAN(LOLO) SURFACE 257 10.4 MN- AND CR-DOPED GAN ONE-DIMENSIONAL STRUCTURES 259 10.4.1 MN-DOPED GAN NANOWIRES 259 10.4.2 CR-DOPED GAN NANOTUBES 262 10.4.3 CR-DOPED GAN NANOHOLE ARRAYS 265 10.5 N-DOPED MN AND CR CLUSTERS 268 10.5.1 GIANT MAGNETIC MOMENTS OF MN X N CLUSTERS 268 10.5.2 N-INDUCED MAGNETIC TRANSITION IN SMALL CR X N CLUSTERS 269 10.6 SUMMARY 270 ACKNOWLEDGEMENTS 271 REFERENCES 271 SIC CATALYSIS TECHNOLOGY 275 11.1 INTRODUCTION 275 11.2 SILICON CARBIDE SUPPORT 276 11.3 HEAT EFFECTS DURING REACTION 277 11.4 REACTIONS ON SIC AS CATALYTIC SUPPORTS 278 11.5 EXAMPLES OF SIC CATALYST APPLICATIONS 279 11.5.1 PT/SS-SIC CATALYST FOR CATALYTIC COMBUSTION OF CARBON PARTICLES IN DIESEL ENGINES 279 11.5.2 COMPLETE OXIDATION OF METHANE 280 11.5.3 SIC-SUPPORTED MO03-CARBON-MODIFIED CATALYST FOR THE N-HEPTANE ISOMERIZATION 280 11.5.4 SELECTIVE OXIDATION OF H 2 S OVER SIC-SUPPORTED IRON CATALYSTS INTO ELEMENTAL SULFUR 281 CONTENTS 11.5.5 PARTIAL OXIDATION OF W-BUTANE TO MALEIC ANHYDRIDE USING SIC-MIXED AND PD-MODIFIED VANADYL PYROPHOSPHATE (VPO) CATALYSTS (CASE STUDY) 282 11.6 PROSPECTS AND CONCLUSIONS 288 REFERENCES 289 NANOPOROUS SIC AS A SEMI-PERMEABLE BIOMEMBRANE FOR MEDICAL USE: PRACTICAL AND THEORETICAL CONSIDERATIONS 291 12.1 THE RATIONALE FOR IMPLANTABLE SEMI-PERMEABLE MATERIALS 291 12.2 THE BIOLOGY OF SOLUBLE SIGNALING PROTEINS IN TISSUE 292 12.3 MEASURING CYTOKINE SECRETION IN LIVING TISSUES AND ORGANS 294 12.4 CREATING A BIOCOMPATIBLE TISSUE - DEVICE INTERFACE: ADVANTAGES OF SIC 295 12.5 THE TESTING OF SIC MEMBRANES FOR PERMEABILITY OF PROTEINS 296 12.6 IMPROVING THE STRUCTURE OF SIC MEMBRANES FOR BIOSENSOR INTERFACES 299 12.7 THEORETICAL CONSIDERATIONS: MODELING DIFFUSION THROUGH A POROUS MEMBRANE 301 12.7.1 EFFECTIVE MEDIUM MODELS FOR A POROUS MEMBRANE 302 12.7.2 COMPARISON WITH EXPERIMENT 304 12.8 FUTURE DEVELOPMENT: MARRIAGE OF MEMBRANE AND MICROCHIP 305 12.9 CONCLUSIONS 307 ACKNOWLEDGEMENTS 307 REFERENCES 308 311
adam_txt	POROUS SILICON CARBIDE AND GALLIUM NITRIDE EPITAXY, CATALYSIS, AND BIOTECHNOLOGY APPLICATIONS RANDALL M. FEENSTRA DEPARTMENT OF PHYSICS, CARNEGIE MELLON UNIVERSITY, PITTSBURGH, PENNSYLVANIA, USA COLIN E.C. WOOD ELECTRONICS DIVISION, US OFFICE OFNAVAL RESEARCH, ARLINGTON, VIRGINIA, USA JOHN WILEY & SONS, LTD CONTENTS PREFACE XI 1 POROUS SIC PREPARATION, CHARACTERIZATION AND MORPHOLOGY 1 1.1 INTRODUCTION 1 1.2 TRIANGULAER POROUS MORPHOLOGY IN N-TYPE 4H-SIC 2 1.2.1 CRYSTAL ANODIZATION 2 1.2.2 DESCRIPTION OF THE POROUS STRUCTURE 3 1.2.3 MODEL OF THE MORPHOLOGY 9 1.3 NANO-COLUMNAR PORE FORMATION IN 6H-SIC 15 1.3.1 EXPERIMENTAL 15 1.3.2 RESULTS 16 1.3.3 DISCUSSION 18 1.4 SUMMARY 26 ACKNOWLEDGEMENTS 27 REFERENCES 27 2 PROCESSING POROUS SIC: DIFFUSION, OXIDATION, CONTACT FORMATION 3 1 2.1 INTRODUCTION 31 2.2 FORMATION OF POROUS LAYER 32 2.3 DIFFUSION IN POROUS SIC 42 2.4 OXIDATION 47 2.5 CONTACTS TO POROUS SIC 49 ACKNOWLEDGEMENTS 53 REFERENCES 53 3 GROWTH OF SIC ON POROUS SIC BUFFER LAYERS 55 3.1 INTRODUCTIO N 55 3.2 SIC CVD GROWTH 57 CONTENTS 3.3 GROWTH OF 3C-SIC ON POROUS SI VIA COLD-WALL EPITAXY 58 3.3.1 GROWTH ON POROUS SI SUBSTRATES 58 3.3.2 GROWTH ON STABILIZED POROUS SI SUBSTRATES 62 3.4 GROWTH OF 3C-SIC ON POROUS 3C-SIC 64 3.4.1 GROWTH IN LPCVD COLD-WALL REACTOR 64 3.5 GROWTH OF 4H-SIC ON POROUS 4H-SIC 67 3.6 CONCLUSION 73 ACKNOWLEDGEMENTS 74 REFERENCES 74 PREPARATION AND PROPERTIES OF POROUS GAN FABRICATED BY METAL-ASSISTED ELECTROLESS ETCHING 77 4.1 INTRODUCTION 77 4.2 CREATION OF POROUS GAN BY ELECTROLESS ETCHING 78 4.3 MORPHOLOGY CHARACTERIZATION 80 4.3.1 POROUS GAN DERIVED FROM UNINTENTIONALLY DOPED FILMS 80 4.3.2 TRANSMISSION ELECTRON MICROSCOPY (TEM) CHARACTERIZATION 84 4.4 LUMINESCENCE OF POROUS GAN 85 4.4.1 CATHODOLUMINESCENCE (CL) OF POROUS GAN 86 4.4.2 PHOTOLUMINESCENCE (PL) OF POROUS GAN 88 4.5 RAMAN SPECTROSCOPY OF POROUS GAN 89 4.5.1 CHARACTERISTICS OF RAMAN SCATTERING IN GAN 89 4.5.2 RAMAN SPECTRA OF POROUS GAN EXCITED BELOW BAND GAP 91 4.6 SUMMARY AND CONCLUSIONS 95 ACKNOWLEDGEMENTS 95 REFERENCES 95 GROWTH OF GAN ON POROUS SIC BY MOLECULAR BEAM EPITAXY 101 5.1 INTRODUCTION 101 5.2 MORPHOLOGY AND PREPARATION OF POROUS SIC SUBSTRATES 104 5.2.1 POROUS SUBSTRATES 104 5.2.2 HYDROGEN ETCHING 105 CONTENTS VLL 5.3 MBE GROWTH OF GAN ON POROUS SIC SUBSTRATES 108 5.3.1 EXPERIMENTAL DETAILS 108 5.3.2 FILM STRUCTURE 110 5.3.3 FILM STRAIN 114 5.4 SUMMARY 116 ACKNOWLEDGEMENTS 117 REFERENCES 117 GAN LATERAL EPITAXY GROWTH USING POROUS SIN X , TIN* AND SIC 121 6.1 INTRODUCTION 121 6.2 EPITAXY OF GAN ON POROUS SIN* NETWORK 122 6.2.1 THREE-STEP GROWTH METHOD 123 6.2.2 STRUCTURAL AND OPTICAL CHARACTERIZATION 128 6.2.3 SCHOTTKY DIODES (SDS) ON UNDOPED GAN TEMPLATES 135 6.2.4 DEEP LEVEL TRANSITION SPECTRUM 138 6.3 EPITAXIAL LATERAL OVERGROWTH OF GAN ON POROUS TIN 140 6.3.1 FORMATION OF POROUS TIN 140 6.3.2 GROWTH OF GAN ON POROUS TIN 142 6.3.3 CHARACTERIZATION BY XRD 146 6.3.4 CHARACTERIZATION BY TEM 146 6.3.5 CHARACTERIZATION BY PL 152 6.4 GROWTH OF GAN ON POROUS SIC 154 6.4.1 FABRICATION OF POROUS SIC 156 6.4.2 GAN GROWTH ON HYDROGEN POLISHED POROUS SIC 157 6.4.3 GAN GROWTH ON CHEMICAL MECHANICAL POLISHED POROUS SIC 164 ACKNOWLEDGEMENTS 167 REFERENCES 167 HVPE GROWTH OF GAN ON POROUS SIC SUBSTRATES 171 7.1 INTRODUCTION 171 7.2 PSC SUBSTRATE FABRICATION AND PROPERTIES 172 7.2.1 FORMATION OF VARIOUS TYPES OF SPSC STRUCTURE 173 7.2.2 DENSE LAYER 177 7.2.3 MONITORING OF ANODIZATION PROCESS 178 VLLL CONTENTS 7.2.4 VACANCY MODEL OF PRIMARY PORE FORMATION 183 7.2.5 STABILITY OF SPSC UNDER POST-ANODIZATION TREATMENT 190 7.3 EPITAXIAL GROWTH OF GAN FILMS ON PSC SUBSTRATES 195 7.3.1 THE GROWTH AND ITS EFFECT ON THE STRUCTURE OF THE PSC SUBSTRATE 195 7.3.2 PROPERTIES OF THE GAN FILMS GROWN 198 7.4 SUMMARY 206 REFERENCES 207 DISLOCATION MECHANISMS IN GAN FILMS GROWN ON POROUS SUBSTRATES OR INTERLAYERS 213 8.1 INTRODUCTION 213 8.2 EXTENDED DEFECTS IN EPITAXIALLY GROWN GAN THIN LAYERS 214 8.3 DISLOCATION MECHANISMS IN CONVENTIONAL LATERAL EPITAXY OVERGROWTH OF GAN 217 8.4 GROWTH OF GAN ON POROUS SIC SUBSTRATES 220 8.5 GROWTH OF GAN ON POROUS SIN AND TIN INTERLAYERS 222 8.5.1 GAN GROWTH ON A TIN INTERLAYER 223 8.5.2 GAN GROWTH ON A SIN INTERLAYER 224 8.6 SUMMARY 226 ACKNOWLEDGEMENTS 227 REFERENCES 227 ELECTRICAL PROPERTIES OF POROUS SIC 231 9.1 INTRODUCTION 231 9.2 RESISTIVITY AND HALL EFFECT 232 9.3 DEEP LEVEL TRANSIENT SPECTROSCOPY 234 9.3.1 FUNDAMENTALS OF DLTS 234 9.3.2 METHOD OF SOLVING THE GENERAL EQUATION 236 9.4 SAMPLE CONSIDERATIONS 237 9.5 POTENTIAL ENERGY NEAR A PORE 238 9.6 DLTS DATA AND ANALYSIS 240 ACKNOWLEDGEMENTS 243 REFERENCES 243 MAGNETISM OF DOPED GAN NANOSTRUCTURES 245 10.1 INTRODUCTION 245 10.2 MN-DOPED GAN CRYSTAL 247 10.3 MN-DOPED GAN THIN FILMS 248 10.3.1 MN-DOPED GAN (1120) SURFACE 249 10.3.2 MN-DOPED GAN (1010) SURFACE_ 252 10.3.3 MNANDCCODOPEDINGAN(LOLO) SURFACE 257 10.4 MN- AND CR-DOPED GAN ONE-DIMENSIONAL STRUCTURES 259 10.4.1 MN-DOPED GAN NANOWIRES 259 10.4.2 CR-DOPED GAN NANOTUBES 262 10.4.3 CR-DOPED GAN NANOHOLE ARRAYS 265 10.5 N-DOPED MN AND CR CLUSTERS 268 10.5.1 GIANT MAGNETIC MOMENTS OF MN X N CLUSTERS 268 10.5.2 N-INDUCED MAGNETIC TRANSITION IN SMALL CR X N CLUSTERS 269 10.6 SUMMARY 270 ACKNOWLEDGEMENTS 271 REFERENCES 271 SIC CATALYSIS TECHNOLOGY 275 11.1 INTRODUCTION 275 11.2 SILICON CARBIDE SUPPORT 276 11.3 HEAT EFFECTS DURING REACTION 277 11.4 REACTIONS ON SIC AS CATALYTIC SUPPORTS 278 11.5 EXAMPLES OF SIC CATALYST APPLICATIONS 279 11.5.1 PT/SS-SIC CATALYST FOR CATALYTIC COMBUSTION OF CARBON PARTICLES IN DIESEL ENGINES 279 11.5.2 COMPLETE OXIDATION OF METHANE 280 11.5.3 SIC-SUPPORTED MO03-CARBON-MODIFIED CATALYST FOR THE N-HEPTANE ISOMERIZATION 280 11.5.4 SELECTIVE OXIDATION OF H 2 S OVER SIC-SUPPORTED IRON CATALYSTS INTO ELEMENTAL SULFUR 281 CONTENTS 11.5.5 PARTIAL OXIDATION OF W-BUTANE TO MALEIC ANHYDRIDE USING SIC-MIXED AND PD-MODIFIED VANADYL PYROPHOSPHATE (VPO) CATALYSTS (CASE STUDY) 282 11.6 PROSPECTS AND CONCLUSIONS 288 REFERENCES 289 NANOPOROUS SIC AS A SEMI-PERMEABLE BIOMEMBRANE FOR MEDICAL USE: PRACTICAL AND THEORETICAL CONSIDERATIONS 291 12.1 THE RATIONALE FOR IMPLANTABLE SEMI-PERMEABLE MATERIALS 291 12.2 THE BIOLOGY OF SOLUBLE SIGNALING PROTEINS IN TISSUE 292 12.3 MEASURING CYTOKINE SECRETION IN LIVING TISSUES AND ORGANS 294 12.4 CREATING A BIOCOMPATIBLE TISSUE - DEVICE INTERFACE: ADVANTAGES OF SIC 295 12.5 THE TESTING OF SIC MEMBRANES FOR PERMEABILITY OF PROTEINS 296 12.6 IMPROVING THE STRUCTURE OF SIC MEMBRANES FOR BIOSENSOR INTERFACES 299 12.7 THEORETICAL CONSIDERATIONS: MODELING DIFFUSION THROUGH A POROUS MEMBRANE 301 12.7.1 EFFECTIVE MEDIUM MODELS FOR A POROUS MEMBRANE 302 12.7.2 COMPARISON WITH EXPERIMENT 304 12.8 FUTURE DEVELOPMENT: MARRIAGE OF MEMBRANE AND MICROCHIP 305 12.9 CONCLUSIONS 307 ACKNOWLEDGEMENTS 307 REFERENCES 308 311
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id	DE-604.BV023253495
illustrated	Illustrated
index_date	2024-07-02T20:28:54Z
indexdate	2024-07-09T21:14:12Z
institution	BVB
isbn	9780470517529
language	English
lccn	2007046623
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-016438821
oclc_num	181335879
open_access_boolean
owner	DE-703 DE-29T
owner_facet	DE-703 DE-29T
physical	XIV, 318 S. Ill., graph. Darst.
publishDate	2008
publishDateSearch	2008
publishDateSort	2008
publisher	Wiley
record_format	marc
spelling	Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra ; Colin E. C. Wood [eds.] Chichester [u.a.] Wiley 2008 XIV, 318 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Silicon carbide Gallium nitride Semiconductors Membran (DE-588)4038571-1 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 s Galliumnitrid (DE-588)4375592-6 s Halbleitertechnologie (DE-588)4158814-9 s DE-604 Membran (DE-588)4038571-1 s Feenstra, Randall M. Sonstige oth http://www.loc.gov/catdir/enhancements/fy0805/2007046623-d.html Publisher description http://www.loc.gov/catdir/enhancements/fy0805/2007046623-t.html Table of contents only GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016438821&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Silicon carbide Gallium nitride Semiconductors Membran (DE-588)4038571-1 gnd Siliciumcarbid (DE-588)4055009-6 gnd Galliumnitrid (DE-588)4375592-6 gnd Halbleitertechnologie (DE-588)4158814-9 gnd
subject_GND	(DE-588)4038571-1 (DE-588)4055009-6 (DE-588)4375592-6 (DE-588)4158814-9
title	Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications
title_auth	Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications
title_exact_search	Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications
title_exact_search_txtP	Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications
title_full	Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra ; Colin E. C. Wood [eds.]
title_fullStr	Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra ; Colin E. C. Wood [eds.]
title_full_unstemmed	Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra ; Colin E. C. Wood [eds.]
title_short	Porous silicon carbide and gallium nitride
title_sort	porous silicon carbide and gallium nitride epitaxy catalysis and biotechnology applications
title_sub	epitaxy, catalysis, and biotechnology applications
topic	Silicon carbide Gallium nitride Semiconductors Membran (DE-588)4038571-1 gnd Siliciumcarbid (DE-588)4055009-6 gnd Galliumnitrid (DE-588)4375592-6 gnd Halbleitertechnologie (DE-588)4158814-9 gnd
topic_facet	Silicon carbide Gallium nitride Semiconductors Membran Siliciumcarbid Galliumnitrid Halbleitertechnologie
url	http://www.loc.gov/catdir/enhancements/fy0805/2007046623-d.html http://www.loc.gov/catdir/enhancements/fy0805/2007046623-t.html http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016438821&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv	AT feenstrarandallm poroussiliconcarbideandgalliumnitrideepitaxycatalysisandbiotechnologyapplications

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