Porous silicon carbide and gallium nitride: epitaxy, catalysis, and biotechnology applications
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Chichester [u.a.]
Wiley
2008
|
| Schlagworte: | |
| Online-Zugang: | Publisher description Table of contents only Inhaltsverzeichnis |
| Beschreibung: | Includes bibliographical references and index |
| Beschreibung: | XIV, 318 S. Ill., graph. Darst. |
| ISBN: | 9780470517529 |
Internformat
MARC
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| 245 | 1 | 0 | |a Porous silicon carbide and gallium nitride |b epitaxy, catalysis, and biotechnology applications |c Randall M. Feenstra ; Colin E. C. Wood [eds.] |
| 264 | 1 | |a Chichester [u.a.] |b Wiley |c 2008 | |
| 300 | |a XIV, 318 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Includes bibliographical references and index | ||
| 650 | 4 | |a Silicon carbide | |
| 650 | 4 | |a Gallium nitride | |
| 650 | 4 | |a Semiconductors | |
| 650 | 0 | 7 | |a Membran |0 (DE-588)4038571-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumcarbid |0 (DE-588)4055009-6 |2 gnd |9 rswk-swf |
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| 700 | 1 | |a Feenstra, Randall M. |e Sonstige |4 oth | |
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Datensatz im Suchindex
| _version_ | 1804137557785575425 |
|---|---|
| adam_text | POROUS SILICON CARBIDE AND GALLIUM NITRIDE EPITAXY, CATALYSIS, AND
BIOTECHNOLOGY APPLICATIONS RANDALL M. FEENSTRA DEPARTMENT OF PHYSICS,
CARNEGIE MELLON UNIVERSITY, PITTSBURGH, PENNSYLVANIA, USA COLIN E.C.
WOOD ELECTRONICS DIVISION, US OFFICE OFNAVAL RESEARCH, ARLINGTON,
VIRGINIA, USA JOHN WILEY & SONS, LTD CONTENTS PREFACE XI 1 POROUS SIC
PREPARATION, CHARACTERIZATION AND MORPHOLOGY 1 1.1 INTRODUCTION 1 1.2
TRIANGULAER POROUS MORPHOLOGY IN N-TYPE 4H-SIC 2 1.2.1 CRYSTAL
ANODIZATION 2 1.2.2 DESCRIPTION OF THE POROUS STRUCTURE 3 1.2.3 MODEL OF
THE MORPHOLOGY 9 1.3 NANO-COLUMNAR PORE FORMATION IN 6H-SIC 15 1.3.1
EXPERIMENTAL 15 1.3.2 RESULTS 16 1.3.3 DISCUSSION 18 1.4 SUMMARY 26
ACKNOWLEDGEMENTS 27 REFERENCES 27 2 PROCESSING POROUS SIC: DIFFUSION,
OXIDATION, CONTACT FORMATION 3 1 2.1 INTRODUCTION 31 2.2 FORMATION OF
POROUS LAYER 32 2.3 DIFFUSION IN POROUS SIC 42 2.4 OXIDATION 47 2.5
CONTACTS TO POROUS SIC 49 ACKNOWLEDGEMENTS 53 REFERENCES 53 3 GROWTH OF
SIC ON POROUS SIC BUFFER LAYERS 55 3.1 INTRODUCTIO N 55 3.2 SIC CVD
GROWTH 57 CONTENTS 3.3 GROWTH OF 3C-SIC ON POROUS SI VIA COLD-WALL
EPITAXY 58 3.3.1 GROWTH ON POROUS SI SUBSTRATES 58 3.3.2 GROWTH ON
STABILIZED POROUS SI SUBSTRATES 62 3.4 GROWTH OF 3C-SIC ON POROUS 3C-SIC
64 3.4.1 GROWTH IN LPCVD COLD-WALL REACTOR 64 3.5 GROWTH OF 4H-SIC ON
POROUS 4H-SIC 67 3.6 CONCLUSION 73 ACKNOWLEDGEMENTS 74 REFERENCES 74
PREPARATION AND PROPERTIES OF POROUS GAN FABRICATED BY METAL-ASSISTED
ELECTROLESS ETCHING 77 4.1 INTRODUCTION 77 4.2 CREATION OF POROUS GAN BY
ELECTROLESS ETCHING 78 4.3 MORPHOLOGY CHARACTERIZATION 80 4.3.1 POROUS
GAN DERIVED FROM UNINTENTIONALLY DOPED FILMS 80 4.3.2 TRANSMISSION
ELECTRON MICROSCOPY (TEM) CHARACTERIZATION 84 4.4 LUMINESCENCE OF POROUS
GAN 85 4.4.1 CATHODOLUMINESCENCE (CL) OF POROUS GAN 86 4.4.2
PHOTOLUMINESCENCE (PL) OF POROUS GAN 88 4.5 RAMAN SPECTROSCOPY OF POROUS
GAN 89 4.5.1 CHARACTERISTICS OF RAMAN SCATTERING IN GAN 89 4.5.2 RAMAN
SPECTRA OF POROUS GAN EXCITED BELOW BAND GAP 91 4.6 SUMMARY AND
CONCLUSIONS 95 ACKNOWLEDGEMENTS 95 REFERENCES 95 GROWTH OF GAN ON POROUS
SIC BY MOLECULAR BEAM EPITAXY 101 5.1 INTRODUCTION 101 5.2 MORPHOLOGY
AND PREPARATION OF POROUS SIC SUBSTRATES 104 5.2.1 POROUS SUBSTRATES 104
5.2.2 HYDROGEN ETCHING 105 CONTENTS VLL 5.3 MBE GROWTH OF GAN ON POROUS
SIC SUBSTRATES 108 5.3.1 EXPERIMENTAL DETAILS 108 5.3.2 FILM STRUCTURE
110 5.3.3 FILM STRAIN 114 5.4 SUMMARY 116 ACKNOWLEDGEMENTS 117
REFERENCES 117 GAN LATERAL EPITAXY GROWTH USING POROUS SIN X , TIN* AND
SIC 121 6.1 INTRODUCTION 121 6.2 EPITAXY OF GAN ON POROUS SIN* NETWORK
122 6.2.1 THREE-STEP GROWTH METHOD 123 6.2.2 STRUCTURAL AND OPTICAL
CHARACTERIZATION 128 6.2.3 SCHOTTKY DIODES (SDS) ON UNDOPED GAN
TEMPLATES 135 6.2.4 DEEP LEVEL TRANSITION SPECTRUM 138 6.3 EPITAXIAL
LATERAL OVERGROWTH OF GAN ON POROUS TIN 140 6.3.1 FORMATION OF POROUS
TIN 140 6.3.2 GROWTH OF GAN ON POROUS TIN 142 6.3.3 CHARACTERIZATION BY
XRD 146 6.3.4 CHARACTERIZATION BY TEM 146 6.3.5 CHARACTERIZATION BY PL
152 6.4 GROWTH OF GAN ON POROUS SIC 154 6.4.1 FABRICATION OF POROUS SIC
156 6.4.2 GAN GROWTH ON HYDROGEN POLISHED POROUS SIC 157 6.4.3 GAN
GROWTH ON CHEMICAL MECHANICAL POLISHED POROUS SIC 164 ACKNOWLEDGEMENTS
167 REFERENCES 167 HVPE GROWTH OF GAN ON POROUS SIC SUBSTRATES 171 7.1
INTRODUCTION 171 7.2 PSC SUBSTRATE FABRICATION AND PROPERTIES 172 7.2.1
FORMATION OF VARIOUS TYPES OF SPSC STRUCTURE 173 7.2.2 DENSE LAYER 177
7.2.3 MONITORING OF ANODIZATION PROCESS 178 VLLL CONTENTS 7.2.4 VACANCY
MODEL OF PRIMARY PORE FORMATION 183 7.2.5 STABILITY OF SPSC UNDER
POST-ANODIZATION TREATMENT 190 7.3 EPITAXIAL GROWTH OF GAN FILMS ON PSC
SUBSTRATES 195 7.3.1 THE GROWTH AND ITS EFFECT ON THE STRUCTURE OF THE
PSC SUBSTRATE 195 7.3.2 PROPERTIES OF THE GAN FILMS GROWN 198 7.4
SUMMARY 206 REFERENCES 207 DISLOCATION MECHANISMS IN GAN FILMS GROWN ON
POROUS SUBSTRATES OR INTERLAYERS 213 8.1 INTRODUCTION 213 8.2 EXTENDED
DEFECTS IN EPITAXIALLY GROWN GAN THIN LAYERS 214 8.3 DISLOCATION
MECHANISMS IN CONVENTIONAL LATERAL EPITAXY OVERGROWTH OF GAN 217 8.4
GROWTH OF GAN ON POROUS SIC SUBSTRATES 220 8.5 GROWTH OF GAN ON POROUS
SIN AND TIN INTERLAYERS 222 8.5.1 GAN GROWTH ON A TIN INTERLAYER 223
8.5.2 GAN GROWTH ON A SIN INTERLAYER 224 8.6 SUMMARY 226
ACKNOWLEDGEMENTS 227 REFERENCES 227 ELECTRICAL PROPERTIES OF POROUS SIC
231 9.1 INTRODUCTION 231 9.2 RESISTIVITY AND HALL EFFECT 232 9.3 DEEP
LEVEL TRANSIENT SPECTROSCOPY 234 9.3.1 FUNDAMENTALS OF DLTS 234 9.3.2
METHOD OF SOLVING THE GENERAL EQUATION 236 9.4 SAMPLE CONSIDERATIONS 237
9.5 POTENTIAL ENERGY NEAR A PORE 238 9.6 DLTS DATA AND ANALYSIS 240
ACKNOWLEDGEMENTS 243 REFERENCES 243 MAGNETISM OF DOPED GAN
NANOSTRUCTURES 245 10.1 INTRODUCTION 245 10.2 MN-DOPED GAN CRYSTAL 247
10.3 MN-DOPED GAN THIN FILMS 248 10.3.1 MN-DOPED GAN (1120) SURFACE 249
10.3.2 MN-DOPED GAN (1010) SURFACE_ 252 10.3.3 MNANDCCODOPEDINGAN(LOLO)
SURFACE 257 10.4 MN- AND CR-DOPED GAN ONE-DIMENSIONAL STRUCTURES 259
10.4.1 MN-DOPED GAN NANOWIRES 259 10.4.2 CR-DOPED GAN NANOTUBES 262
10.4.3 CR-DOPED GAN NANOHOLE ARRAYS 265 10.5 N-DOPED MN AND CR CLUSTERS
268 10.5.1 GIANT MAGNETIC MOMENTS OF MN X N CLUSTERS 268 10.5.2
N-INDUCED MAGNETIC TRANSITION IN SMALL CR X N CLUSTERS 269 10.6 SUMMARY
270 ACKNOWLEDGEMENTS 271 REFERENCES 271 SIC CATALYSIS TECHNOLOGY 275
11.1 INTRODUCTION 275 11.2 SILICON CARBIDE SUPPORT 276 11.3 HEAT EFFECTS
DURING REACTION 277 11.4 REACTIONS ON SIC AS CATALYTIC SUPPORTS 278 11.5
EXAMPLES OF SIC CATALYST APPLICATIONS 279 11.5.1 PT/SS-SIC CATALYST FOR
CATALYTIC COMBUSTION OF CARBON PARTICLES IN DIESEL ENGINES 279 11.5.2
COMPLETE OXIDATION OF METHANE 280 11.5.3 SIC-SUPPORTED
MO03-CARBON-MODIFIED CATALYST FOR THE N-HEPTANE ISOMERIZATION 280 11.5.4
SELECTIVE OXIDATION OF H 2 S OVER SIC-SUPPORTED IRON CATALYSTS INTO
ELEMENTAL SULFUR 281 CONTENTS 11.5.5 PARTIAL OXIDATION OF W-BUTANE TO
MALEIC ANHYDRIDE USING SIC-MIXED AND PD-MODIFIED VANADYL PYROPHOSPHATE
(VPO) CATALYSTS (CASE STUDY) 282 11.6 PROSPECTS AND CONCLUSIONS 288
REFERENCES 289 NANOPOROUS SIC AS A SEMI-PERMEABLE BIOMEMBRANE FOR
MEDICAL USE: PRACTICAL AND THEORETICAL CONSIDERATIONS 291 12.1 THE
RATIONALE FOR IMPLANTABLE SEMI-PERMEABLE MATERIALS 291 12.2 THE BIOLOGY
OF SOLUBLE SIGNALING PROTEINS IN TISSUE 292 12.3 MEASURING CYTOKINE
SECRETION IN LIVING TISSUES AND ORGANS 294 12.4 CREATING A BIOCOMPATIBLE
TISSUE - DEVICE INTERFACE: ADVANTAGES OF SIC 295 12.5 THE TESTING OF SIC
MEMBRANES FOR PERMEABILITY OF PROTEINS 296 12.6 IMPROVING THE STRUCTURE
OF SIC MEMBRANES FOR BIOSENSOR INTERFACES 299 12.7 THEORETICAL
CONSIDERATIONS: MODELING DIFFUSION THROUGH A POROUS MEMBRANE 301 12.7.1
EFFECTIVE MEDIUM MODELS FOR A POROUS MEMBRANE 302 12.7.2 COMPARISON WITH
EXPERIMENT 304 12.8 FUTURE DEVELOPMENT: MARRIAGE OF MEMBRANE AND
MICROCHIP 305 12.9 CONCLUSIONS 307 ACKNOWLEDGEMENTS 307 REFERENCES 308
311
|
| adam_txt |
POROUS SILICON CARBIDE AND GALLIUM NITRIDE EPITAXY, CATALYSIS, AND
BIOTECHNOLOGY APPLICATIONS RANDALL M. FEENSTRA DEPARTMENT OF PHYSICS,
CARNEGIE MELLON UNIVERSITY, PITTSBURGH, PENNSYLVANIA, USA COLIN E.C.
WOOD ELECTRONICS DIVISION, US OFFICE OFNAVAL RESEARCH, ARLINGTON,
VIRGINIA, USA JOHN WILEY & SONS, LTD CONTENTS PREFACE XI 1 POROUS SIC
PREPARATION, CHARACTERIZATION AND MORPHOLOGY 1 1.1 INTRODUCTION 1 1.2
TRIANGULAER POROUS MORPHOLOGY IN N-TYPE 4H-SIC 2 1.2.1 CRYSTAL
ANODIZATION 2 1.2.2 DESCRIPTION OF THE POROUS STRUCTURE 3 1.2.3 MODEL OF
THE MORPHOLOGY 9 1.3 NANO-COLUMNAR PORE FORMATION IN 6H-SIC 15 1.3.1
EXPERIMENTAL 15 1.3.2 RESULTS 16 1.3.3 DISCUSSION 18 1.4 SUMMARY 26
ACKNOWLEDGEMENTS 27 REFERENCES 27 2 PROCESSING POROUS SIC: DIFFUSION,
OXIDATION, CONTACT FORMATION 3 1 2.1 INTRODUCTION 31 2.2 FORMATION OF
POROUS LAYER 32 2.3 DIFFUSION IN POROUS SIC 42 2.4 OXIDATION 47 2.5
CONTACTS TO POROUS SIC 49 ACKNOWLEDGEMENTS 53 REFERENCES 53 3 GROWTH OF
SIC ON POROUS SIC BUFFER LAYERS 55 3.1 INTRODUCTIO N 55 3.2 SIC CVD
GROWTH 57 CONTENTS 3.3 GROWTH OF 3C-SIC ON POROUS SI VIA COLD-WALL
EPITAXY 58 3.3.1 GROWTH ON POROUS SI SUBSTRATES 58 3.3.2 GROWTH ON
STABILIZED POROUS SI SUBSTRATES 62 3.4 GROWTH OF 3C-SIC ON POROUS 3C-SIC
64 3.4.1 GROWTH IN LPCVD COLD-WALL REACTOR 64 3.5 GROWTH OF 4H-SIC ON
POROUS 4H-SIC 67 3.6 CONCLUSION 73 ACKNOWLEDGEMENTS 74 REFERENCES 74
PREPARATION AND PROPERTIES OF POROUS GAN FABRICATED BY METAL-ASSISTED
ELECTROLESS ETCHING 77 4.1 INTRODUCTION 77 4.2 CREATION OF POROUS GAN BY
ELECTROLESS ETCHING 78 4.3 MORPHOLOGY CHARACTERIZATION 80 4.3.1 POROUS
GAN DERIVED FROM UNINTENTIONALLY DOPED FILMS 80 4.3.2 TRANSMISSION
ELECTRON MICROSCOPY (TEM) CHARACTERIZATION 84 4.4 LUMINESCENCE OF POROUS
GAN 85 4.4.1 CATHODOLUMINESCENCE (CL) OF POROUS GAN 86 4.4.2
PHOTOLUMINESCENCE (PL) OF POROUS GAN 88 4.5 RAMAN SPECTROSCOPY OF POROUS
GAN 89 4.5.1 CHARACTERISTICS OF RAMAN SCATTERING IN GAN 89 4.5.2 RAMAN
SPECTRA OF POROUS GAN EXCITED BELOW BAND GAP 91 4.6 SUMMARY AND
CONCLUSIONS 95 ACKNOWLEDGEMENTS 95 REFERENCES 95 GROWTH OF GAN ON POROUS
SIC BY MOLECULAR BEAM EPITAXY 101 5.1 INTRODUCTION 101 5.2 MORPHOLOGY
AND PREPARATION OF POROUS SIC SUBSTRATES 104 5.2.1 POROUS SUBSTRATES 104
5.2.2 HYDROGEN ETCHING 105 CONTENTS VLL 5.3 MBE GROWTH OF GAN ON POROUS
SIC SUBSTRATES 108 5.3.1 EXPERIMENTAL DETAILS 108 5.3.2 FILM STRUCTURE
110 5.3.3 FILM STRAIN 114 5.4 SUMMARY 116 ACKNOWLEDGEMENTS 117
REFERENCES 117 GAN LATERAL EPITAXY GROWTH USING POROUS SIN X , TIN* AND
SIC 121 6.1 INTRODUCTION 121 6.2 EPITAXY OF GAN ON POROUS SIN* NETWORK
122 6.2.1 THREE-STEP GROWTH METHOD 123 6.2.2 STRUCTURAL AND OPTICAL
CHARACTERIZATION 128 6.2.3 SCHOTTKY DIODES (SDS) ON UNDOPED GAN
TEMPLATES 135 6.2.4 DEEP LEVEL TRANSITION SPECTRUM 138 6.3 EPITAXIAL
LATERAL OVERGROWTH OF GAN ON POROUS TIN 140 6.3.1 FORMATION OF POROUS
TIN 140 6.3.2 GROWTH OF GAN ON POROUS TIN 142 6.3.3 CHARACTERIZATION BY
XRD 146 6.3.4 CHARACTERIZATION BY TEM 146 6.3.5 CHARACTERIZATION BY PL
152 6.4 GROWTH OF GAN ON POROUS SIC 154 6.4.1 FABRICATION OF POROUS SIC
156 6.4.2 GAN GROWTH ON HYDROGEN POLISHED POROUS SIC 157 6.4.3 GAN
GROWTH ON CHEMICAL MECHANICAL POLISHED POROUS SIC 164 ACKNOWLEDGEMENTS
167 REFERENCES 167 HVPE GROWTH OF GAN ON POROUS SIC SUBSTRATES 171 7.1
INTRODUCTION 171 7.2 PSC SUBSTRATE FABRICATION AND PROPERTIES 172 7.2.1
FORMATION OF VARIOUS TYPES OF SPSC STRUCTURE 173 7.2.2 DENSE LAYER 177
7.2.3 MONITORING OF ANODIZATION PROCESS 178 VLLL CONTENTS 7.2.4 VACANCY
MODEL OF PRIMARY PORE FORMATION 183 7.2.5 STABILITY OF SPSC UNDER
POST-ANODIZATION TREATMENT 190 7.3 EPITAXIAL GROWTH OF GAN FILMS ON PSC
SUBSTRATES 195 7.3.1 THE GROWTH AND ITS EFFECT ON THE STRUCTURE OF THE
PSC SUBSTRATE 195 7.3.2 PROPERTIES OF THE GAN FILMS GROWN 198 7.4
SUMMARY 206 REFERENCES 207 DISLOCATION MECHANISMS IN GAN FILMS GROWN ON
POROUS SUBSTRATES OR INTERLAYERS 213 8.1 INTRODUCTION 213 8.2 EXTENDED
DEFECTS IN EPITAXIALLY GROWN GAN THIN LAYERS 214 8.3 DISLOCATION
MECHANISMS IN CONVENTIONAL LATERAL EPITAXY OVERGROWTH OF GAN 217 8.4
GROWTH OF GAN ON POROUS SIC SUBSTRATES 220 8.5 GROWTH OF GAN ON POROUS
SIN AND TIN INTERLAYERS 222 8.5.1 GAN GROWTH ON A TIN INTERLAYER 223
8.5.2 GAN GROWTH ON A SIN INTERLAYER 224 8.6 SUMMARY 226
ACKNOWLEDGEMENTS 227 REFERENCES 227 ELECTRICAL PROPERTIES OF POROUS SIC
231 9.1 INTRODUCTION 231 9.2 RESISTIVITY AND HALL EFFECT 232 9.3 DEEP
LEVEL TRANSIENT SPECTROSCOPY 234 9.3.1 FUNDAMENTALS OF DLTS 234 9.3.2
METHOD OF SOLVING THE GENERAL EQUATION 236 9.4 SAMPLE CONSIDERATIONS 237
9.5 POTENTIAL ENERGY NEAR A PORE 238 9.6 DLTS DATA AND ANALYSIS 240
ACKNOWLEDGEMENTS 243 REFERENCES 243 MAGNETISM OF DOPED GAN
NANOSTRUCTURES 245 10.1 INTRODUCTION 245 10.2 MN-DOPED GAN CRYSTAL 247
10.3 MN-DOPED GAN THIN FILMS 248 10.3.1 MN-DOPED GAN (1120) SURFACE 249
10.3.2 MN-DOPED GAN (1010) SURFACE_ 252 10.3.3 MNANDCCODOPEDINGAN(LOLO)
SURFACE 257 10.4 MN- AND CR-DOPED GAN ONE-DIMENSIONAL STRUCTURES 259
10.4.1 MN-DOPED GAN NANOWIRES 259 10.4.2 CR-DOPED GAN NANOTUBES 262
10.4.3 CR-DOPED GAN NANOHOLE ARRAYS 265 10.5 N-DOPED MN AND CR CLUSTERS
268 10.5.1 GIANT MAGNETIC MOMENTS OF MN X N CLUSTERS 268 10.5.2
N-INDUCED MAGNETIC TRANSITION IN SMALL CR X N CLUSTERS 269 10.6 SUMMARY
270 ACKNOWLEDGEMENTS 271 REFERENCES 271 SIC CATALYSIS TECHNOLOGY 275
11.1 INTRODUCTION 275 11.2 SILICON CARBIDE SUPPORT 276 11.3 HEAT EFFECTS
DURING REACTION 277 11.4 REACTIONS ON SIC AS CATALYTIC SUPPORTS 278 11.5
EXAMPLES OF SIC CATALYST APPLICATIONS 279 11.5.1 PT/SS-SIC CATALYST FOR
CATALYTIC COMBUSTION OF CARBON PARTICLES IN DIESEL ENGINES 279 11.5.2
COMPLETE OXIDATION OF METHANE 280 11.5.3 SIC-SUPPORTED
MO03-CARBON-MODIFIED CATALYST FOR THE N-HEPTANE ISOMERIZATION 280 11.5.4
SELECTIVE OXIDATION OF H 2 S OVER SIC-SUPPORTED IRON CATALYSTS INTO
ELEMENTAL SULFUR 281 CONTENTS 11.5.5 PARTIAL OXIDATION OF W-BUTANE TO
MALEIC ANHYDRIDE USING SIC-MIXED AND PD-MODIFIED VANADYL PYROPHOSPHATE
(VPO) CATALYSTS (CASE STUDY) 282 11.6 PROSPECTS AND CONCLUSIONS 288
REFERENCES 289 NANOPOROUS SIC AS A SEMI-PERMEABLE BIOMEMBRANE FOR
MEDICAL USE: PRACTICAL AND THEORETICAL CONSIDERATIONS 291 12.1 THE
RATIONALE FOR IMPLANTABLE SEMI-PERMEABLE MATERIALS 291 12.2 THE BIOLOGY
OF SOLUBLE SIGNALING PROTEINS IN TISSUE 292 12.3 MEASURING CYTOKINE
SECRETION IN LIVING TISSUES AND ORGANS 294 12.4 CREATING A BIOCOMPATIBLE
TISSUE - DEVICE INTERFACE: ADVANTAGES OF SIC 295 12.5 THE TESTING OF SIC
MEMBRANES FOR PERMEABILITY OF PROTEINS 296 12.6 IMPROVING THE STRUCTURE
OF SIC MEMBRANES FOR BIOSENSOR INTERFACES 299 12.7 THEORETICAL
CONSIDERATIONS: MODELING DIFFUSION THROUGH A POROUS MEMBRANE 301 12.7.1
EFFECTIVE MEDIUM MODELS FOR A POROUS MEMBRANE 302 12.7.2 COMPARISON WITH
EXPERIMENT 304 12.8 FUTURE DEVELOPMENT: MARRIAGE OF MEMBRANE AND
MICROCHIP 305 12.9 CONCLUSIONS 307 ACKNOWLEDGEMENTS 307 REFERENCES 308
311 |
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| id | DE-604.BV023253495 |
| illustrated | Illustrated |
| index_date | 2024-07-02T20:28:54Z |
| indexdate | 2024-07-09T21:14:12Z |
| institution | BVB |
| isbn | 9780470517529 |
| language | English |
| lccn | 2007046623 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016438821 |
| oclc_num | 181335879 |
| open_access_boolean | |
| owner | DE-703 DE-29T |
| owner_facet | DE-703 DE-29T |
| physical | XIV, 318 S. Ill., graph. Darst. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Wiley |
| record_format | marc |
| spelling | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra ; Colin E. C. Wood [eds.] Chichester [u.a.] Wiley 2008 XIV, 318 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Includes bibliographical references and index Silicon carbide Gallium nitride Semiconductors Membran (DE-588)4038571-1 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 s Galliumnitrid (DE-588)4375592-6 s Halbleitertechnologie (DE-588)4158814-9 s DE-604 Membran (DE-588)4038571-1 s Feenstra, Randall M. Sonstige oth http://www.loc.gov/catdir/enhancements/fy0805/2007046623-d.html Publisher description http://www.loc.gov/catdir/enhancements/fy0805/2007046623-t.html Table of contents only GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016438821&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Silicon carbide Gallium nitride Semiconductors Membran (DE-588)4038571-1 gnd Siliciumcarbid (DE-588)4055009-6 gnd Galliumnitrid (DE-588)4375592-6 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| subject_GND | (DE-588)4038571-1 (DE-588)4055009-6 (DE-588)4375592-6 (DE-588)4158814-9 |
| title | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications |
| title_auth | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications |
| title_exact_search | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications |
| title_exact_search_txtP | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications |
| title_full | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra ; Colin E. C. Wood [eds.] |
| title_fullStr | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra ; Colin E. C. Wood [eds.] |
| title_full_unstemmed | Porous silicon carbide and gallium nitride epitaxy, catalysis, and biotechnology applications Randall M. Feenstra ; Colin E. C. Wood [eds.] |
| title_short | Porous silicon carbide and gallium nitride |
| title_sort | porous silicon carbide and gallium nitride epitaxy catalysis and biotechnology applications |
| title_sub | epitaxy, catalysis, and biotechnology applications |
| topic | Silicon carbide Gallium nitride Semiconductors Membran (DE-588)4038571-1 gnd Siliciumcarbid (DE-588)4055009-6 gnd Galliumnitrid (DE-588)4375592-6 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| topic_facet | Silicon carbide Gallium nitride Semiconductors Membran Siliciumcarbid Galliumnitrid Halbleitertechnologie |
| url | http://www.loc.gov/catdir/enhancements/fy0805/2007046623-d.html http://www.loc.gov/catdir/enhancements/fy0805/2007046623-t.html http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016438821&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT feenstrarandallm poroussiliconcarbideandgalliumnitrideepitaxycatalysisandbiotechnologyapplications |