Advances in new diamond science and technology: Fourth International Conference on New Diamond Science and Technology Kobe, Japan, July 18 - 22, 1994
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| Sprache: | English |
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1994
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| Beschreibung: | XXVI, 809 S. Ill., graph. Darst. |
| ISBN: | 494399508X |
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| adam_text | ADVANCES IN NEW DIAMOND SCIENCE AND TECHNOLOGY FOURTH INTERNATIONAL
CONFERENCE ON NEW DIAMOND SCIENCE AND TECHNOLOGY KOBE, JAPAN, JULY
18-22, 1994 EDITED BY S. SAITO KANAGAWA ACADEMY OF SCIENCE & TECHNOLOGY
N. FUJIMORI SUMITOMO ELECTRIC INDUSTRIES, LTD. O. FUKUNAGA TOKYO
INSTITUTE OF TECHNOLOGY M. KAMO NATIONAL INSTITUTE FOR RESEARCH IN
INORGANIC MATERIALS K. KOBASHI KOBE STEEL, LTD. M. YOSHIKAWA TOKYO
INSTITUTE OF TECHNOLOGY MYU TOKYO-JAPAN 1994 XI TABLE OF CONTENTS
PREFACE V 1. OPENING SESSION: DIAMOND RESEARCH IN ASIA 1 2. SPECIAL
LECTURES: CORPORATE STRATEGIES FOR DIAMOND BUSINESS AND R & D 3
CORPORATE STRATEGIES FOR DIAMOND BUSINESS AND R&D IN KOBE STEEL, LTD. Y.
YAMAGUCHI (JAPAN) 5 FROM BUSINESS TO FUTURE DREAM OF NEW DIAMOND T.
NAKAHARA (JAPAN) 9 CORPORATE AND NATIONAL STRATEGIES FOR DIAMOND R&D R.
ROY (USA) 11 3. DEPOSITION METHODS OF DIAMOND FILMS 15 INNOVATIVE
APPROACHES TO DIAMOND SYNTHESIS R. ROY (USA) 17 DIAMOND FILM GROWTH
USING HALOMETHANE BY DC PLASMA CHEMICAL VAPOR DEPOSITION F. C.-N. HONG,
J. Y. HSU, M. CHANG, G. T. LIANG AND J. J. WU (TAIWAN, ROC) 23 LARGE
AREA DIAMOND FILM GROWTH IN A LOW PRESSURE FLAME H.-S. SHIN, N. G.
GLUMAC AND D. G. GOODWIN (USA) 27 DIAMOND FILM DEPOSITION BY A
SUBSTRATE-STABILIZED FLAT FLAME K. UCHIDA, A. ITOH, K. HIGUCHI, M.
KOHZAKI AND S. NODA (JAPAN) 31 DIAMOND GROWTH ON SIO 2 PARTICLES IN A
FLUIDIZED BED REACTOR H.-S. SHIN AND D. G. GOODWIN (USA) 35 LOW
TEMPERATURE DEPOSITION OF THIN FILM DIAMOND M. J. ULCZYNSKI, D. K.
REINHARD, M. PRYSTAJKO AND J. ASMUSSEN (USA) 41 FABRICATION OF DIAMOND
FILMS ON POLYMER K. MISHUKU, Y. NEGISHI, T. YARA, A. HATTA, T. ITO AND
A. HIRAKI (JAPAN) 45 EFFECTS OF METALS INTRODUCED TO PLASMA ON DIAMOND
SYNTHESIS BY MICROWAVE PLASMA CVD M. NAGANO, T. NAGAO, H. MISHIMA AND H.
ICHINOSE (JAPAN) 49 XLL DIAMOND DEPOSITION FROM PLASMAS INCLUDING C 6 H
6 AS CARBON SOURCE T. KOTAKI, H. ISONO, H. SHIKANO AND O. MATSUMOTO
(JAPAN) 53 EXTREMELY MILD DEPOSITION OF DLC FILMS BY SUPER-WIDE ECR
PLASMA SOURCE EXCITED BY TRAVELING MICROWAVE S. AMADATSU, A. ISHII, T.
AOYAMA, M. SUGIYO AND T. KOBAYASHI (JAPAN) 57 DIAMOND FILM SYNTHESIS BY
PULSE MODULATED ECR DISCHARGE A. HATTA, K. KADOTA, T. YARA, T. ITO AND
A. HIRAKI (JAPAN) 61 LOW-TEMPERATURE DEPOSITION OF DIAMOND FILMS USING
RF PLASMA CVD I. WATANABE, H. MATSUMOTO, R. MAKARA AND K. MATSUMOTO
(JAPAN) 65 SYNTHESIS OF DIAMOND THICK FILMS BY DC PACVD J.-K. LEE, W.-S.
LEE, Y.-J. BAIK AND K. Y. EUN (KOREA) 69 FORMATION OF DIAMOND FILMS BY
PULSED DISCHARGE PLASMA CVD M. NODA, H. KUSAKABE AND S. MARUNO (JAPAN)
73 DIAMOND FILM GROWTH BY A HOLLOW CATHODE CVD METHOD F. C.-N. HONG,
J.-H. HWANG, M.-C. YEH, G.-T. LIANG AND H.-C. CHIEN (TAIWAN, ROC) ;.. 77
SYNTHESIS OF DIAMOND BY PLASMA JET UNDER MEDIUM PRESSURE S. SAKIYAMA, O.
FUKUMASA, K. AOKI, T. MURAKAMI AND H. ARASHI (JAPAN) 81 MECHANISTIC
STUDIES OF DIAMOND GROWTH USING CHLOROMETHANE REACTANTS IN A
HOT-FILAMENT CVD REACTOR F. C.-N. HONG, J.-J. WU, C.-T. SU AND S.-H. YEH
(TAIWAN, ROC) 85 DIAGNOSTICS OF A FILAMENT-ASSISTED DIAMOND GROWTH
ENVIRONMENT BY LASER SPECTROSCOPY N. OTA AND N. FUJIMORI (JAPAN) 89
INFLUENCE OF TRANSPORT AND CHEMICAL REACTION PROCESSES ON DIAMOND GROWTH
RATES, MORPHOLOGY AND QUALITY C. KOVACH, L. ZEATOUN, B. ROOZBEHANI, I.
GREBER AND J. C. ANGUS (USA) 93 PROBLEMS OF MEAN FREE PATH AND ELECTRIC
FIELD ON HOT FILAMENT DIAMOND CVD S. HONMA, H. SAITOH, T. ISHIGURO AND
Y. ICHINOSE (JAPAN) 97 DEVELOPMENT OF APPARATUS USING PENNING ION SOURCE
FOR SYNTHESIS OF THIN FILMS A. HIRATA, T. TATAMI AND M. YOSHIKAWA
(JAPAN) 101 X11I ON COMBUSTION SYNTHESIS OF DIAMOND FILMS BY A MODIFIED
TORCH D.-Y. WANG, C.-C. WANG AND S.-R. CHANG (TAIWAN, ROC) 105
LASER-INDUCED TRANSFER OF ULTRAFINE DIAMOND PARTICLES FOR SELECTIVE
DEPOSITION OF DIAMOND FILMS S. M. PIMENOV, G. A. SHAFEEV, A. A. SMOLIN,
V. I. KONOV AND B. K. VODOLAGA (RUSSIA) 109 FORMATION OF DIAMOND
NANOCRYSTALS IN LASER-IRRADIATED AMORPHOUS CARBON FILMS L. C. NISTOR, J.
VAN LANDUYT, V. G. RALCHENKO, T. V. KONONENKO, E. D. OBRAZTSOVA AND V.
E. STRELNITSKY (BELGUIM) 113 DEPOSITION OF DIAMOND THIN FILMS BY
FILAMENT-ASSISTED EXCIMER LASER ABLATION OF GRAPHITE H. CHEN, N. MAFFEI
AND R. H. PRINCE (CANADA) 1 17 4. IN-SITU ANALYSIS 121 MICROWAVE CVD OF
DIAMOND: PLASMA DIAGNOSTICS AND DEPOSITION REACTOR MODELING T. A.
GROTJOHN, G. L. KING AND W.-Y. TAN (USA) 123 IN SITU DETECTION OF METHYL
RADICALS IN FILAMENT ASSISTED DIAMOND GROWTH ENVIRONMENT BY RESONANCE
IONIZATION SPECTROSCOPY N. OTA AND N. FUJIMORI (JAPAN) 127 CONTRIBUTION
TO THE MODELLING OF A MICROWAVE PACVD DIAMOND DEPOSITION REACTOR:
CHEMICAL KINETICS AND DIFFUSION TRANSPORT K. HASSOUNI, S. FARHAT, C. D.
SCOTT AND A. GICQUEL (FRANCE) 131 IN SITU PULSED RAMAN STUDY OF GROWING
PROCESS OF A DIAMOND FILM IN A MICROWAVE PLASMA REACTOR L. FAYETTE, B.
MARCUS, M. MERMOUX, N. ROSMAN, L. ABELLO AND G. LUCAZEAU (FRANCE) 135 5.
NUCLEATION AND GROWTH OF DIAMOND FILMS 139 DIAMOND GROWTH MECHANISMS:
INFLUENCE ON GROWTH RATES AND QUALITY J. C. ANGUS, E. A. EVANS AND Y.
WANG (USA) 141 SYNTHESIS OF VERY THIN DIAMOND FILM ON SI SUBSTRATE
PRETREATED IN FLUIDIZED BED T. TAKARADA, T. OKAZAKI, H. TAKEZAWA, K.
KATO AND Y. NAKAIKE (JAPAN) 145 XIV CONTROL OF TWIN FORMATION: A
PREREQUISITE FOR THE GROWTH OF THICK ORIENTED DIAMOND FILMS C. WILD, N.
HERRES, R. LOCHER, W. MULLER-SEBERT AND P. KOIDL (GERMANY) 149
NUCLEATION OF DIAMOND BY CHEMICAL VAPOR DEPOSITION IN BIAS-ENHANCED
MICROWAVE PLASMA H. MAEDA, M. IRIE, K. KUSAKABE AND S. MOROOKA (JAPAN)
153 INVESTIGATION OF NUCLEATION DENSITY AND GROWTH RATE OF DIAMOND
CRYSTALS DEPOSITED BY GLOW DC DISCHARGE PLASMA CVD N. V. SAMOKHVALOV, V.
E. STREL NITSKIJ, V. A. BELOUS, E. D. OBRAZTSOVA AND V. G. RAL CHENKO
(UKRAINE) 157 ROLE OF THE SUBSTRATE ON THE NUCLEATION AND THE CRYSTAL
GROWTH OF DIAMOND THROUGH CVD METHODS G. DEMAZEAU, D. MICHAU, B. TANGUY,
J. GRIM, J. DELAFOND, M. JAOUEN, R. CAVAGNAT AND M. COUZI (FRANCE) 163
DIAMOND NUCLEATION ON STRESSED SUBSTRATES K. K. HIRAKURI, N. MUTSUKURA
AND Y. MACHI (JAPAN) 167 ULTRA-HIGH NUCLEATION DENSITY FOR DIAMOND FILM
GROWTH AT 470 AND 900C G.-S. YANG, M. ASLAM, M. ULCZYNSKI AND D. K.
REINHARD (USA) 171 SOME APPLICATIONS OF DIAMOND NUCLEATION BY THE
BIAS-PRETREATMENT METHOD S. YUGO, K. SEMOTO, K. HOSHINA AND T. KIMURA
(JAPAN) 175 FORMATION OF DIAMOND FILMS ON CARBONIZED SI SUBSTRATE BY
INTERMITTENT DISCHARGE PLASMA CVD M. NODA, H. KUSAKABE AND S. MARUNO
(JAPAN) 179 INVESTIGATION OF DIAMOND FILMS DEPOSITED ON ISOTROPIC
ARTIFICIAL GRAPHITE AND ITS APPLICATIONS TO BIOMEDICAL ENGINEERING Y.-H.
LEE AND L.-R. HONG (TAIWAN, ROC) 183 DIAMOND SYNTHESIS ON THE ROW-SOOT
COATED SUBSTRATES Y. SAKAMOTO AND M. TAKAYA (JAPAN) 187 SEEDING WITH
ULTRAFINE DIAMOND PARTICLES FOR DIAMOND SYNTHESIS BY CVD H. MAKITA, T,
YARA, K. NISHIMURA, A. HATTA, T. ITO AND A. HIRAKI (JAPAN) 191
DEPOSITION OF DIAMOND ON THE POLYCRYSTALLINE NICKEL SUBSTRATE X. QIAO,
O. FUKUNAGA, T. TSURUMI, N. OHASHI, N. SHINODA AND K. YUI (JAPAN) 195 XV
DEPOSITION OF DIAMOND ON MO SUBSTRATE FROM PLASMAS PREPARED USING CH 4
AND CO AS CARBON SOURCES IN MICROWAVE DISCHARGE H. SHIKANO, T. KOTAKI
AND O. MATSUMOTO (JAPAN) 199 MICROSTRUCTURE OF BORON-DOPED DIAMOND FILMS
N. KIKUCHI, Y. OHSAWA, H. YOSHIKAWA AND M. KITAGAWA (JAPAN) 203 THE
PRODUCTION OF CVD DIAMOND-COATED WIRES AND FREE-STANDING DIAMOND TUBES
P. W. MAY, C. A. REGO, M. N. R. ASHFOLD, K. N. ROSSER, N. M. EVERITT, P.
G. PARTRIDGE, Q. S. CHIA AND G. LU (UK) 211 EFFECT OF ARGON ON THE
INTERNAL STRESS OF CVD DIAMOND FILM ON SILICON C. T. HWANG, Y. H. CHIOU,
S. L. SUNG, Y. S. CHANG AND H. C. SHIH (TAIWAN, ROC) 215 CHANGE IN
NUCLEATION DENSITY FOR CVD DIAMONDS ON SI SUBSTRATE SUBJECTED TO
DIFFERENT ANNEALING CONDITIONS C. L. FRITZEN, R. P. LIVI, E. H. DA
JORNADA AND J. A. H. DA JORNADA (BRASIL) 221 NUCLEATION AND GROWTH OF
DIAMOND IN AN ENCLOSED OXYACETYLENE COMBUSTION SYSTEM A. SOMASHEKHAR, S.
P. BOZEMAN, J. T. GLASS, P. W. MORRISON AND J. T. PRATER (USA) 225 6.
EPITAXIAL GROWTH 229 EFFECT OF TEXTURE ORIENTATION ON THE GROWTH OF
HIGHLY ORIENTED TEXTURED DIAMOND FILM ON SI SUBSTRATE Y.-J. BAIK AND K.
Y. EUN (KOREA) 231 OPTIMIZATION OF THE TEXTURE OF EPITAXIALLY NUCLEATED
DIAMOND FILMS ON SILICON R. HESSMER, M. SCHRECK, S. GEIER, B.
RAUSCHENBACH AND B. STRITZKER (GERMANY) 235 SURFACE STRUCTURE AND
MORPHOLOGY OF DIAMOND EPITAXIAL FILMS T. TSUNO, T. IMAI, S. SHIKATA AND
N. FUJIMORI (JAPAN) 241 CROSS-SECTIONAL TEM OBSERVATION OF HOMOEPITAXIAL
DIAMOND M. TARUTANI, T. ANDO, Y. TAKAI, M. KAMO AND R. SHIMIZU (JAPAN)
247 THE DEFECT MICROSTRUCTURE OF THICK HOMOEPITAXIAL DIAMOND FILMS D. R.
BLACK, H. E. BURDETTE, L. ROBINS, M. A. PIANO, M. D. MOYER, M. A.
MORENO, L. S. PAN, D. R. KANIA AND W. F. BANHOLZER (USA) 251 XVI A
CALCULATION OF DIAMOND C(001)-2XL, 2X2 SURFACES BY USING THE
FIRST-PRINCIPLES MOLECULAR DYNAMICS K. KOBAYASHI (JAPAN) 255 MPACVD
DIAMOND HOMOEPITAXIAL GROWTH: ELECTRON BACK SCATTER PATTERN AND POLE
FIGURE ANALYSES OF THE GROWN LAYERS C. FINDELING-DUFOUR, F. SILVA, R.
CHIRON, A. VIGNES AND A. GICQUEL (FRANCE)... 259 ELECTROLUMINESCENCE OF
HOMOEPITAXIAL DIAMOND FILM AND SYNTHETIC INSULATING DIAMOND A. A.
MELNIKOV, A. V. DENISENKO, A. M. ZAITSEV, V. S. VARICHENKO, V. P.
VARNIN, I. G. TEREMETSKAJA, V. A. LAPTEV, JU. A. PALYANOV, W. R. FAHRNER
AND B. BURCHARD (RUSSIA) 263 INITIAL STAGE OF HIGHLY ORIENTED, TEXTURED
DIAMOND PARTICLES ON SI(OOL) AND P-SIC(OOL) T. SUESADA, K. OHTANI, N.
NAKAMURA AND H. KAWARADA (JAPAN) 267 GROWTH OF ORIENTED DIAMOND
PARTICLES ON 6H-TYPE OF SIC AND GRAPHITE FLAKES T. SUZUKI, M. YAGI AND
K. SHIBUKI (JAPAN) 271 METHODS OF CHARACTERIZING THE TEXTURE OF CVD
DIAMOND FILMS S. GEIER, M. SCHRECK, R. HESSMER, B. RAUSCHENBACH, B.
STRITZKER, K. HELMING ANDK. KUNZE (GERMANY) 275 CHARACTERIZATION OF
HIGHLY ORIENTED POLYCRYSTALLINE DIAMOND FILMS GROWN IN A NIRIM-TYPE
REACTOR T. TACHIBANA, K. HAYASHI AND K. KOBASHI (JAPAN) 279 ORIENTED
DIAMOND PARTICLES ON COPPER SUBSTRATES T. ISHIKURA, S. YAMASHITA, S.
OJIKA AND H. KAWARADA (JAPAN) 283 ORIENTED GROWTH OF DIAMOND ON {111}
AND {100} OF CUBIC BORON NITRIDE USING COMBUSTION FLAME TECHNIQUE Y.
IMABAYASHI, H. SAITOH AND R. URAO (JAPAN) 287 CHARACTERISTIC OF
EPITAXIAL GROWTH OF DIAMOND FILMS ON CUBIC BORON NITRIDE SURFACE BY DC
GLOW DISCHARGE CHEMICAL VAPOR DEPOSITION G. ZOU, C. GAO, Z. JIN, T.
ZHANG AND X. LU (P. R. CHINA) 291 MOSAIC GROWTH OF DIAMOND G. JANSSEN
AND L. J. GILING (THE NETHERLANDS) 295 XV11 7. CHARACTERIZATION 299
APPLICATIONS OF EXCITONIC EMISSIONS FROM DIAMONDS H. KAWARADA, T.
TSUTSUMI AND J. IMAMURA (JAPAN) 301 FOURIER TRANSFORM
CATHODOLUMINESCENCE SPECTROSCOPY OF DIAMOND A. T. COLLINS, E. C.
LIGHTOWLERS, V. HIGGS, L. ALLERS AND S. J. SHARP (UK) 307 OPTICAL DEFECT
CENTRES IN RANDOM POLYCRYSTALLINE AND (100) HIGHLY ORIENTED DIAMOND
FILMS D. BUHAENKO, C. BEER, P. ELLIS, L. WALKER, B. STONER, G. TESSMER
AND R. FAUBER (UK) 31 1 NEW CATHODOLUMINESCENCE FROM BORON-DOPED DIAMOND
S. C. LAWSON, H. KANDA, H. KIYOTA, T. TSUTSUMI AND H. KAWARADA (JAPAN)
315 RADIATIVE RECOMBINATION PROCESSES IN SEMICONDUCTING DIAMOND J. A.
FREITAS, JR., P. B. KLEIN AND A. T. COLLINS (USA) 321 ASPECTS OF NATURAL
GEM DIAMOND C. M. WELBOURN (UK) 327 THE IONIZED A-CENTRE AND OTHER
DI-NITROGEN DEFECTS IN DIAMOND M. E. NEWTON, O. D. TUCKER AND J. M.
BAKER (UK) 333 ELECTRONIC STRUCTURE OF NI-ION IN DIAMOND STUDIED BY A
DV-XA METHOD N. OHASHI, O. FUKUNAGA, J. TANAKA, J. ISOYA AND S. TANAKA
(JAPAN) 337 BORON AND NITROGEN ANALYSIS IN CVD DIAMOND FILMS USING COLD
NEUTRON DEPTH PROFILING G. P. LAMAZE, A. BADZIAN, T. BADZIAN, R. G.
DOWNING AND L. PILIONE (USA).... 341 RECENT DEVELOPMENTS IN THE THERMAL
CONDUCTIVITY OF CVD DIAMOND J. E. GRAEBNER (USA) 345 ESR STUDIES OF
POINT DEFECTS IN SYNTHETIC DIAMOND CRYSTALS J. ISOYA, H. KANDA AND Y.
MORITA (JAPAN) 351 HIGH QUALITY SEMICONDUCTING DIAMOND FILMS AND DEVICES
J. T. GLASS, D. L. DREIFUS, R. E. FAUBER, B. A. FOX, M. L. HARTSELL, R.
B. HENARD, J. S. HOLMES, D. MALTA, L. S. PIANO, A. J. TESSMER, G. J.
TESSMER AND H. A. WYNANDS (USA) 355 XV111 DIAMOND FILMS CO-DOPED WITH
PHOSPHORUS AND NITROGEN L. J. GILING, Y. S. WANG, G. Z. CAO, G. J.
BAUHUIS AND P. F. A. ALKEMADE (THE NETHERLANDS) 359 EXCITON
RECOMBINATION RADIATION FROM COMBUSTION FLAME DIAMOND T. TSUTSUMI, J.
IMAMURA, M. SUZUKI, S. TAKEUCHI, M. MURAKAWA AND H. KAWARADA (JAPAN) 363
TIME DEPENDENT CATHODOLUMINESCENCE (CL) MEASUREMENT OF DIAMOND J. H.
WON, H. YAGI, N. EIMORI, H. YAGYU, A. HATTA, Y. MORI, T. ITO, T. SASAKI
AND A. HIRAKI (JAPAN) 367 LOW TEMPERATURE MICRO-PHOTOLUMINESCENCE OF
DEFECT CENTERS IN CVD DIAMOND FILMS T. S. MCCAULEY AND Y. K. VOHRA (USA)
371 PULSED RAMAN SET UP FOR CHARACTERIZATION OF DIAMOND FILM DURING ITS
GROWING PROCESS IN A DC PLASMA JET CVD REACTOR N. ROSMAN, L. ABELLO, G.
LUCAZEAU, J. P. CHABERT, T. PRIEM AND E. DASILVA (FRANCE) 375 OPTICAL
PROPERTIES OF DIAMOND PLATES SYNTHESIZED BY ARC DISCHARGE PLASMA JET
CHEMICAL VAPOR DEPOSITION A. HIRATA AND M. YOSHIKAWA (JAPAN) 379
MICROSTRUCTURE CONTROL AND SURFACE POLISHING OF CVD DIAMOND THIN FILM
FOR OPTICAL APPLICATION S. K. CHOI, S. K. JUNG, Y. H. JIN, Y. S. PARK,
S. H. KIM AND J. W. LEE (KOREA).. 383 SPECTROPHOTOMETRIC
CHARACTERIZATION OF ROUGH DIAMOND LAYERS ON SILICON R. PETRICH AND O.
STENZEL (GERMANY) 387 APPLICATIONS OF ISOPURE AND NATURAL ABUNDANCE
SYNTHETIC DIAMONDS IN HIGH PRESSURE RESEARCH Y. K. VOHRA, T. S.
MACCAULEY AND S. S. VAGARALI (USA) 391 SPECTRAL HOLE BURNING IN
REACTOR-TREATED DIAMOND MATERIALS I. SILDOS AND A. OSVET (ESTONIA) 395
FACTORS INFLUENCING THERMAL CONDUCTIVITY IN DIAMOND FILM C. GU, Z. JIN,
C. WANG, X. LU, G. ZOU, J. ZHANG AND R. FANG (P. R. CHINA) 399 THERMAL
CONDUCTIVITY OF DIAMOND-BASED SILICON-ON-INSULATER STRUCTURES C. GU, Z.
JIN, C. WANG, X. LU, G. ZOU, J. ZHANG AND R. FANG (P. R. CHINA) 403 XIX
STRUCTURAL IMPERFECTIONS IN CVD DIAMOND FILMS Y. SHOW, M. IWASE AND T.
IZUMI (JAPAN) 407 QUANTITATIVE ANALYSIS OF HYDROGEN IN CHEMICAL VAPOR
DEPOSITED DIAMOND H. YAGI, K. NISHIMURA, Y. MORI, A. HATTA, T. ITO AND
A. HIRAKI (JAPAN) 41 1 THEORETICAL ANALYSIS OF
PNEUMATOLYTIC-HYDROTHERMAL ENVIRONMENT AS POTENTIAL SOURCE OF DIAMONDS
IN EARTH S CRUST A. NIEDBALSKA, R. SAFACIRISKI, J. SENTEK AND A.
SZYMAIISKI (POLAND) 415 INCORPORATION OF FILAMENT MATERIAL IN DIAMOND
FILMS PREPARED BY HOT FILAMENT CVD M. TOGUCHI, A. HIGA, A. FUKUDA AND A.
HIRAKI (JAPAN) 419 8. SURFACE STRUCTURE AND MODIFICATION 423 SURFACE
PROCESSES IN DIAMOND CHEMICAL VAPOR DEPOSITION M. P. D EVELYN, R. E.
RAWLES, T. I. HUKKA AND T. A. PAKKANEN (USA) 425 OXIDATION OF DIAMOND
SURFACES STUDIED BY FTIR, TPD AND TPR SPECTROSCOPIES T. ANDO, K.
YAMAMOTO, M. ISHII, M. KAMO AND Y. SATO (JAPAN) 431 SCANNING TUNNELLING
MICROSCOPY DETERMINATION OF ORTHOGONAL DIMER STEP GROWTH OF
HOMOEPITAXIAL P-TYPE (100) DIAMOND H. MAGUIRE, T. ANDO, M. KAMO, W.
ZIMMERMAN-EDLING AND H.-G. BUSMANN (UK) 435 STRUCTURE ANALYSIS OF THE
DIAMOND (100) SURFACE [LOW-ENERGY ELECTRON DIFFRACTION (LEED)] H.
YAMAZAKI AND T. OGIO (JAPAN) 439 OPTICAL STUDIES ON ION-BEAM-DOPED
DIAMOND LAYERS J. F. PRINS (SOUTH AFRICA) 443 P-TYPE DOPING OF DIAMOND
BY BORON ION IMPLANTATION R. KALISH, C. UZAN-SAGUY AND A. SAMOILOFF
(ISRAEL) 449 BASIC STUDY ON LASER-ASSISTED ETCHING OF DIAMOND H.
MIYAZAWA, S. MIYAKE, T. MIYAZAKI, S. WATANABE AND M. MURAKAWA (JAPAN)
453 EXCHANGE OF HYDROGEN ON DIAMOND (111) SURFACE WITH GAS-PHASE
DEUTERIUM T. AIZAWA, T. ANDO, M. KAMO AND Y. SATO (JAPAN) 457 XX A
VIBRATIONAL SPECTROSCOPIC STUDY OF HYDROGENATED DIAMOND SURFACES
BYLNFRARED-VISIBLE SUM-FREQUENCY GENERATION (SFG) T. ANDO, T. AIZAWA, M.
KAMO, Y. SATO, T. ANZAI, H. YAMAMOTO, A. WADA, K. DOMEN AND C. HIROSE
(JAPAN) 461 A SURFACE SCIENCE STUDY ON ELEMENTARY STEPS IN LOW-PRESSURE
DIAMOND SYNTHESIS J. BIENER, A. SCHENK, B. WINTER, C. LUTTERLOH AND J.
KIIPPERS (GERMANY) 465 STRUCTURE OF CVD DEPOSITED DIAMOND (001) 2X1
SURFACE M. KITABATAKE, M. DEGUCHI AND T. HIRAO (JAPAN) 469 THEORETICAL
STUDY OF BOND EXCHANGE MECHANISM DURING CVD GROWTH OF DIAMOND T. OGITSU,
T. MIYAZAKI, M. FUJITA AND M. OKAZAKI (JAPAN) 473 VALENCE-BAND
PHOTOEMISSION STUDY OF HYDROGENATED DIAMOND (111) SURFACES K. YAMAMOTO,
S. SUEHARA, T. ANDO, S. HISHITA, M. KAMO AND Y. SATO (JAPAN) 477
COMPOSITIONAL INHOMOGENEITY OF DIAMOND-GROWN SI SUBSTRATES EVALUATED BY
AUGER ELECTRON SPECTROSCOPY S. TANAKA, K. IKOMA, H. KIYOTA, J. TANAKA,
M. KAMO AND Y. SATO (JAPAN) 481 MOLECULAR BEAM MASS SPECTROMETRIC STUDY
OF THE SPATIAL DISTRIBUTION OF GAS-PHASE SPECIES INVOLVED IN THE GROWTH
OF HFCVD DIAMOND FILMS C. A. REGO, P. W. MAY, C. R. HENDERSON, M. N. R.
ASHFOLD, K. N. ROSSER AND N. M. EVERITT (UK) 485 SPUTTERING RATE OF
POLYCRYSTALLINE DIAMOND FILM USING ARGON ION BEAM T. KYUNO, H. SAITOH
AND R. URAO (JAPAN) 489 PATTERNING OF DIAMOND FILMS BY DIRECT LASER
WRITING: SELECTIVE-AREA DEPOSITION, CHEMICAL ETCHING AND SURFACE
SMOOTHING V. G. RALCHENKO, K. G. KOROTOUSHENKO, A. A. SMOLIN AND V. I.
KONOV (RUSSIA) 493 DIAMOND PROCESSING BY EXCIMER LASER ABLATION K.
HARANO, N. OTA AND N. FUJIMORI (JAPAN) 497 EXCIMER LASER PROCESSING OF
DIAMOND FILMS H. SUZUKI, M. YOSHIKAWA AND H. TOKURA (JAPAN) 501 XXI 9.
HIGH-PRESSURE SYNTHESIS 505 CLASSIFICATION OF THE CATALYSTS FOR DIAMOND
GROWTH H. KANDA (JAPAN) 507 THE FEATURES OF THE PROCESS OF DIAMOND
FORMATION FROM SIC UNDER HIGH PRESSURE AND HIGH TEMPERATURE L. GOU, S.
HONG AND Q. GOU (P. R. CHINA) 513 GROWTH MORPHOLOGY AND PHYSICAL
PROPERTIES OF DIAMOND GROWN IN PHOSPHORUS CATALYST M. AKAISHI, H. KANDA,
T. ANDO, J. TANAKA, M. KAMO, Y. SATO AND S. YAMAOKA (JAPAN) 517 CRYSTAL
GROWTH OF DIAMOND FROM REGROWTH-TREATED GRAPHITE Y. WANG, R. TAKANABE,
H. KAGI, K. J. TAKANO AND M. WAKATSUKI (JAPAN) 521 IMPURITIES OF COBALT
AND MANGANESE IN ARTIFICIAL DIAMOND X.-P. JIA, H. KAGI, S. HAYAKAWA, M.
WAKATSUKI AND Y. GOHSHI (JAPAN) 525 FACTORS WHICH INFLUENCE THE STRENGTH
DISPERSION OF SYNTHETIC DIAMONDS A. MANESCU, M. FECIORU AND O. CELEA
(ROMANIA) 529 FABRICATION OF DIAMOND-CONTAINING INORGANIC COMPOSITES BY
HOT ISOSTATIC PRESSING S. KUME, K. SUZUKI AND H. YOSHIDA (JAPAN) 533
FORMATION OF SOLID SOLUTIONS OF BORON NITRIDE AND CARBON; RECRYSTALLIZED
PRODUCTS OF FLASH-HEATING EXPERIMENTS H. KAGI, I. TSUCHIDA AND M.
WAKATSUKI (JAPAN) 537 MOLECULAR ORBITAL CALCULATION AND AUGER ELECTRON
SPECTROSCOPY OF CUBIC BORON NITRIDES Y. SUETSUGU, J. TANAKA, T.
TANIGUCHI, S. TANAKA AND K. KOBAYASHI (JAPAN) 541 NEW DEVELOPMENTS IN
C-BN SYNTHESIS UNDER HIGH PRESSURE-HIGH TEMPERATURE CONDITIONS G.
DEMAZEAU, L. VEL-BOUTINAUD, V. GONNET, M. JAOUEN, TH. CABIOCH AND G. HUG
(FRANCE) 545 SYNTHESIS OF CUBIC BORON NITRIDE BY CALIBN 2 CATALYST AT
HT/HP H. FUJIOKA, N. OHASHI, T. TSURUMI, O. FUKUNAGA AND S. NAKANO
(JAPAN) 551 FORMATION OF CUBIC BORON NITRIDE FROM A MIXTURE OF FE,N AND
FEB W. LI, H. KAGI AND M. WAKATSUKI (JAPAN) 555 XX11 MICRON CBN POWDER
PRODUCED BY HP/HT SYNTHESIS M. FECIORU, G. DINCA, P. GEORGEONI, G. CALU,
G. BALUTA AND M. DEJU (ROMANIA) 559 EFFECTS OF AMMONIUM HALIDE ADDITIONS
ON CUBIC BORON NITRIDE GROWTH IN VARIOUS CATALYST-BN SYSTEMS G. DINCA,
P. GEORGEONI, G. CALU, G. BALUTA AND M. DEJU (ROMANIA) 563 10. SHOCK
SYNTHESIS 567 MECHANISM OF DIAMOND SYNTHESIS FROM HIGH EXPLOSIVES V.
ANISICHKIN AND D. DOLGUSHIN (RUSSIA) 569 PROCESS OF C M FULLERENE
COLLAPSE TO SP 3 BOND FORMATION UNDER SHOCK COMPRESSION H. HIRAI, K.
KONDO AND N. YOSHIZAWA (JAPAN) 573 CARBON PHASES QUENCHED FROM
SHOCK-COMPRESSED FULLERITES T. SEKINE (JAPAN) 577 SHOCK TREATMENT OF
DIAMOND AND CARBON CONTAINING POWDERS G. BURKHARD, K. DAN, Y. TANABE, A.
B. SAWAOKA AND K. YAMADA (JAPAN) 581 PREDOMINANT PARAMETERS IN THE
SHOCK-SYNTHESIS OF DIAMOND K. KONDO, H. HIRAI AND S. KUKINO (JAPAN) 585
ULTRA-DISPERSED DETONATION DIAMONDS: PROPERTIES AND APPLICATION V. F.
KOMAROV, E. A. PETROV, G. V. SAKOVITCH AND A. V. KLIMOV (RUSSIA) 589 11.
DLC AND OTHER FILMS 593 PREPARATION OF CUBIC BORON NITRIDE FILMS BY
PHASE REGULATED RF BIAS SPUTTERING O. TSUDA, J. FUJIKATA, Y. YAMADA AND
T. YOSHIDA (JAPAN) 595 LOW TEMPERATURE EPR STUDY OF A-C:H FILMS HAVING
DIFFERENT PHYSICAL PROPERTIES C. DE MARTINO, F. DEMICHELIS, M.
FANCIULLI, S. SCHREITER AND A. TAGLIAFERRO (ITALY) 599 BIOCOMPATIBLE
CARBON COATINGS: EVALUATION OF PHYSICAL PROPERTIES P. AMI, C. DE
MARTINO, F. DEMICHELIS, M. SANTI, A. TAGLIAFERRO AND F. VALLANA (ITALY)
603 XXU1 NEW MODEL FOR THE PHOTOLUMINESCENCE BEHAVIOUR OF A-C:H FILMS C.
DE MARTINO, F. DEMICHELIS, A. HAMMERSCHMIDT, S. SCHREITER AND A.
TAGLIAFERRO (ITALY) 607 STRUCTURE AND MECHANICAL PROPERTIES OF A-C:H
FILMS CONTAINING NITROGEN K.-R. LEE AND K. Y. EUN (KOREA) 61 1
PICOSECOND PHOTOLUMINESCENCE IN FLUORINE IMPLANTED A-C:H FILMS S. PENG,
X. HUANG, Y. TAO, D. LIU, N. KE AND S. P. WONG (P. R. CHINA) 615 THE
EFFECT OF SUB-THRESHOLD CO 2 LASER IRRADIATION ON THE IR PROPERTIES OF
MAGNETRON SPUTTERED DLC ON KCL SUBSTRATE F. X. LU, D. G. CHENG, R. Z.
YE, Q. B. SUN, W. X. YU, B. SONG, D. Z. GONG AND G. WANG (P. R. CHINA)
619 DLC FORMATION IN POLYIMIDE SURFACE LAYER BY ION IMPLANTATION H.
WATANABE, A. FUKUDA, K. TAKAHASHI AND M. IWAKI (JAPAN) 623 TRANSPORT IN
FLUORINE IMPLANTED A-C:H THIN FILMS S. P. WONG, N. KE AND S. PENG (HONG
KONG) 627 PROPERTIES OF BORON NITRIDE FILMS SYNTHESIZED BY ION BEAM AND
VAPOR DEPOSITION S. NISHIYAMA, A. EBE, Y. IWAMOTO AND K . OGATA (JAPAN)
631 12. ELECTRICAL PROPERTIES AND APPLICATIONS 635 SURFACE FERMI LEVEL
POSITION OF DIAMOND TREATED WITH PLASMA T. SUGINO, A. FURUKAWA, K.
KARASUTANI, Y. SAKAMOTO AND J. SHIRAFUJI (JAPAN).... 637 FABRICATION OF
DIAMOND-BASED FETS USING ION IMPLANTATION C. A. HEWETT AND J. R. ZEIDLER
(USA) 641 THIN FILM DIAMOND MIS STRUCTURES USING HIGHLY POLARIZABLE GATE
INSULATORS S. SUZUKI, Y. OTSUKA, T. ARIKI, S. SHIKAMA, T. MAKI AND T.
KOBAYASHI (JAPAN).. 653 VARIOUS FEATURES OF METAL/INTRINSIC
DIAMOND/SEMICONDUCTING DIAMOND DIODES K. MIYATA, Y. YOKOTA, K. SAITO AND
K. KOBASHI (JAPAN) 657 FABRICATION OF A GATE-RECESSED-STRUCTURE MESFET
ON DIAMOND FILMS H. SHIOMI, Y. NISHIBAYASHI, N. TODA, S. SHIKATA AND N.
FUJIMORI (JAPAN) 661 XXIV A PROPOSED NOVEL APPLICATION OF THIN OVERLAY
DIAMOND FILMS FOR IMPROVED THERMAL MANAGEMENT BUDGET OF SHORT GATE HIGH
POWER DEVICES S. ROTTER (ISRAEL) 665 HIGH TEMPERATURE ELECTRONIC
APPLICATIONS OF DIAMOND I. M. BUCKLEY-GOLDER, P. R. CHALKER, C.
JOHNSTON, S. ROMANI AND M. WERNER (UK) 669 CHARACTERISTIC OF
PHOTOCONDUCTIVE SWITCH WITH DIAMOND THIN FILM Y. AIKAWA, K. BABA, N.
SHOHATA, H. YONEDA AND K. UEDA (JAPAN) 679 FIELD EMISSION FROM VAPOR
DEPOSITED P-TYPE POLYCRYSTALLINE DIAMOND D. HONG AND M. ASLAM (USA) 683
DIAMOND DETECTORS FOR EXPERIMENTS AT HIGH LUMINOSITY COLLIDERS K. K.
GAN, F. BORCHELT, W. DULINSKI, D. FUJINO, R. GILMAN, S. HAN, J. HASSARD,
A. HOWARD, H. KAGAN, D. KANIA, R. KASS, S. K. KIM, G. KUMBARTSKI, M. H.
LEE, G. LU, E. NYGARD, R. MALCHOW, L. S. PAN, S. SCHNETZER, R. STONE, J.
STRAVER, R. J. TESEREK, W. TRISCHUK, G. THOMSON, P. WEILHAMMER, C.
WHITE, R. L. WOODIN, S. ZHAO, M. ZOELLER AND Y. SUGIMOTO (USA) 687
MICROELECTRONIC PRESSURE SENSOR WITH DIAMOND PIEZORESISTORS ON DIAMOND
DIAPHRAGM J. L. DAVIDSON, D. R. WUR, W. P. KANG, D. KINSER, D. V. KERNS,
J. P. WANG AND Y. C. LING (USA) 693 2.5GHZ SAW BANDPASS FILTER USING
POLYCRYSTALLINE DIAMOND S. SHIKATA, H. NAKAHATA, K. HIGAKI, S. FUJII, A.
HACHIGO AND N. FUJIMORI (JAPAN) 697 GROWTH AND CHARACTERIZATION OF CVD
DIAMOND FILMS DOPED WITH PHOSPHOROUS K. BEKKU, Y. MORI, N. EIMORI, H.
MAKITA, A. HATTA, T. ITO AND A. HIRAKI (JAPAN) 701 ELECTRICAL
CHARACTERIZATION OF BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS
SYNTHESIZED BY HOT-FILAMENT CVD T. SUGINO, K. KARASUTANI, H. KATAOKA, K.
KOBASHI AND J. SHIRAFUJI (JAPAN) 705 EFFECTS OF ANNEALING ON THE
ELECTRICAL PROPERTIES OF BORON-DOPED DIAMOND FILMS C.-F. CHEN AND S. H.
CHEN (TAIWAN, ROC) 709 FORMATION OF CARBIDE OHMIC CONTACTS FOR P-TYPE
DIAMOND A. OTSUKI, J . NAKANISHI, G. KAWAGUCHI, T. OKU AND M. MURAKAMI
(JAPAN) 713 XXV THERMALLY STABLE OHMIC CONTACT TO BORON DOPED DIAMOND
FILMS Y. NISHIBAYASHI, N. TODA, H. SHIOMI AND S. SHIKATA (JAPAN) 717
2D-SIMULATION OF DIAMOND BASED ELECTRONIC DEVICES B. BURCHARD, A. V.
DENISENKO, A. A. MELNIKOV, A. M. ZAITSEV, W. R. FAHRNER, F. PETERMANN,
K. HOPPE AND B. STANSKI (GERMANY) 721 CHARACTERISTICS OF POLYCRYSTALLINE
DIAMOND FILM MISFET AND ITS DEVICE MODELING K. NISHIMURA, H. KOYAMA, K.
MIYATA AND K. KOBASHI (JAPAN) 725 FABRICATION OF MESFET UTILIZING
HYDROGEN-TERMINATED HOMOEPITAXIAL DIAMOND FILMS N. NAKAMURA, M. AOKI, M.
ITOH, N. JIN AND H. KAWARADA (JAPAN) 729 HOLE INJECTION AND OPTICAL
PROPERTIES OF EPITAXIAL DIAMOND P-I-P LAYERED STRUCTURE T. MAKI AND T.
KOBAYASHI (JAPAN) 733 OPTOELECTRONIC DEVICES BASED ON DIAMOND W. R.
FAHRNER, B. BURCHARD, A. M. ZAITSEV, A. A. MELNIKOV, A. V. DENISENKO AND
V. S. VARICHENKO (GERMANY) 737 ELECTROCHEMICAL ACTIVITY OF THE BORON
DOPED CVD DIAMOND FILMS S. YANG, J. ZHU, Y. YAO AND X. ZHANG (P. R.
CHINA) 741 13. MECHANICAL PROPERTIES AND APPLICATIONS 745 ULTRA
PRECISION CUTTING BITES OF CVD DIAMOND N. OYANAGI, T. OBATA AND K.
KOMAKI (JAPAN) 747 LAMINATED DIAMOND FILM CUTTER CONCEPT J. C. ROWLEY
(USA) 751 SYNTHESIS OF DIAMOND DIAPHRAGM BY DC PLASMA JET CVD K.
KURIHARA, K. SASAKI, T. ITANI, M. KAWARADA AND A. KODAIRA (JAPAN) 755
TECHNICAL COST MODELING: AN APPROACH TO PRODUCTION COST IDENTIFICATION
AND REDUCTION S. M. RIESTER, J. V. BUSCH AND D. G. GOODWIN (USA) 759
ADHESION OF DIAMOND FILM DEPOSITED ON CEMENTED CARBIDE SUBSTRATE T.
TSUTSUMOTO, A. NAKAO AND H. MATSUBARA (JAPAN) 763 XXVI INFLUENCE OF
SUBSTRATE MATERIALS ON THE ADHESION OF DC PLASMA JET CVD DIAMOND FILMS
K. SASAKI, K. KURIHARA, T. ITANI, M. KAWARADA AND A. KODAIRA (JAPAN) 767
EFFECT OF CRYSTALLINITY OF DIAMOND ON CUTTING PROPERTY OF CVD DIAMOND
BRAZED TOOL Y.-J. BAIK, K. Y. EUN, J. S. HAN AND J. W. RYU (KOREA) 771
DIAMOND DEPOSITION ON HARD MATERIALS BY HOT-FILAMENT CVD METHOD USING
TANTALUM CARBIDE FILAMENT K. KONOWA, H. MATSUBARA, S.-G. SHIN AND T.
TSUTSUMOTO (JAPAN) 775 APPLICATION OF POLYCRYSTALLINE CVD DIAMOND TO
INDENTER TIP OF SCRATCH TESTER S. TAKEUCHI AND M. MURAKAWA (JAPAN) 779
CUTTING PERFORMANCE OF CVD DIAMOND POLISHED BY THERMOCHEMICAL POLISHING
METHOD F. OKUZUMI, H. TOKURA AND M. YOSHIKAWA (JAPAN) 783 ANALYSIS OF
HOT FILAMENT CVD DIAMOND FILMS ON ETCHED AND UNETCHED WC-CO SURFACES N.
M. EVERITT, R. F. SILVA, J. VIEIRA, C. A. REGO, C. R. HENDERSON, P. W.
MAY AND M. N. R. ASHFOLD (UK) 787 DIAMOND DEPOSITION ON SINTERED
TUNGSTEN C. R. SHI, Y. AVYIGAL, S. DIRNFELD, A. HOFFMAN, A. FAYER AND R.
KALISH (P. R. CHINA) 791 EFFECT OF LASER IRRADIATION ON DIAMOND GROWTH
ON WC-6WT%CO HARD METAL SUBSTRATE F. X. LU, C. M. LI, J. J. WANG, Y.
TZENG, J. WEI, D. Z. GONG AND G. WANG (P. R. CHINA) 795 THE INFLUENCE OF
COATING THICKNESS IN SOLID PARTICLE EROSION OF DIAMOND COATINGS A.
ALAHELISTEN, P. HOLLMAN AND S. HOGMARK (SWEDEN) 799 AUTHOR INDEX 803
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ADVANCES IN NEW DIAMOND SCIENCE AND TECHNOLOGY FOURTH INTERNATIONAL
CONFERENCE ON NEW DIAMOND SCIENCE AND TECHNOLOGY KOBE, JAPAN, JULY
18-22, 1994 EDITED BY S. SAITO KANAGAWA ACADEMY OF SCIENCE & TECHNOLOGY
N. FUJIMORI SUMITOMO ELECTRIC INDUSTRIES, LTD. O. FUKUNAGA TOKYO
INSTITUTE OF TECHNOLOGY M. KAMO NATIONAL INSTITUTE FOR RESEARCH IN
INORGANIC MATERIALS K. KOBASHI KOBE STEEL, LTD. M. YOSHIKAWA TOKYO
INSTITUTE OF TECHNOLOGY MYU TOKYO-JAPAN 1994 XI TABLE OF CONTENTS
PREFACE V 1. OPENING SESSION: DIAMOND RESEARCH IN ASIA 1 2. SPECIAL
LECTURES: CORPORATE STRATEGIES FOR DIAMOND BUSINESS AND R & D 3
CORPORATE STRATEGIES FOR DIAMOND BUSINESS AND R&D IN KOBE STEEL, LTD. Y.
YAMAGUCHI (JAPAN) 5 FROM BUSINESS TO FUTURE DREAM OF NEW DIAMOND T.
NAKAHARA (JAPAN) 9 CORPORATE AND NATIONAL STRATEGIES FOR DIAMOND R&D R.
ROY (USA) 11 3. DEPOSITION METHODS OF DIAMOND FILMS 15 INNOVATIVE
APPROACHES TO DIAMOND SYNTHESIS R. ROY (USA) 17 DIAMOND FILM GROWTH
USING HALOMETHANE BY DC PLASMA CHEMICAL VAPOR DEPOSITION F. C.-N. HONG,
J. Y. HSU, M. CHANG, G. T. LIANG AND J. J. WU (TAIWAN, ROC) 23 LARGE
AREA DIAMOND FILM GROWTH IN A LOW PRESSURE FLAME H.-S. SHIN, N. G.
GLUMAC AND D. G. GOODWIN (USA) 27 DIAMOND FILM DEPOSITION BY A
SUBSTRATE-STABILIZED FLAT FLAME K. UCHIDA, A. ITOH, K. HIGUCHI, M.
KOHZAKI AND S. NODA (JAPAN) 31 DIAMOND GROWTH ON SIO 2 PARTICLES IN A
FLUIDIZED BED REACTOR H.-S. SHIN AND D. G. GOODWIN (USA) 35 LOW
TEMPERATURE DEPOSITION OF THIN FILM DIAMOND M. J. ULCZYNSKI, D. K.
REINHARD, M. PRYSTAJKO AND J. ASMUSSEN (USA) 41 FABRICATION OF DIAMOND
FILMS ON POLYMER K. MISHUKU, Y. NEGISHI, T. YARA, A. HATTA, T. ITO AND
A. HIRAKI (JAPAN) 45 EFFECTS OF METALS INTRODUCED TO PLASMA ON DIAMOND
SYNTHESIS BY MICROWAVE PLASMA CVD M. NAGANO, T. NAGAO, H. MISHIMA AND H.
ICHINOSE (JAPAN) 49 XLL DIAMOND DEPOSITION FROM PLASMAS INCLUDING C 6 H
6 AS CARBON SOURCE T. KOTAKI, H. ISONO, H. SHIKANO AND O. MATSUMOTO
(JAPAN) 53 EXTREMELY MILD DEPOSITION OF DLC FILMS BY SUPER-WIDE ECR
PLASMA SOURCE EXCITED BY TRAVELING MICROWAVE S. AMADATSU, A. ISHII, T.
AOYAMA, M. SUGIYO AND T. KOBAYASHI (JAPAN) 57 DIAMOND FILM SYNTHESIS BY
PULSE MODULATED ECR DISCHARGE A. HATTA, K. KADOTA, T. YARA, T. ITO AND
A. HIRAKI (JAPAN) 61 LOW-TEMPERATURE DEPOSITION OF DIAMOND FILMS USING
RF PLASMA CVD I. WATANABE, H. MATSUMOTO, R. MAKARA AND K. MATSUMOTO
(JAPAN) 65 SYNTHESIS OF DIAMOND THICK FILMS BY DC PACVD J.-K. LEE, W.-S.
LEE, Y.-J. BAIK AND K. Y. EUN (KOREA) 69 FORMATION OF DIAMOND FILMS BY
PULSED DISCHARGE PLASMA CVD M. NODA, H. KUSAKABE AND S. MARUNO (JAPAN)
73 DIAMOND FILM GROWTH BY A HOLLOW CATHODE CVD METHOD F. C.-N. HONG,
J.-H. HWANG, M.-C. YEH, G.-T. LIANG AND H.-C. CHIEN (TAIWAN, ROC) ;. 77
SYNTHESIS OF DIAMOND BY PLASMA JET UNDER MEDIUM PRESSURE S. SAKIYAMA, O.
FUKUMASA, K. AOKI, T. MURAKAMI AND H. ARASHI (JAPAN) 81 MECHANISTIC
STUDIES OF DIAMOND GROWTH USING CHLOROMETHANE REACTANTS IN A
HOT-FILAMENT CVD REACTOR F. C.-N. HONG, J.-J. WU, C.-T. SU AND S.-H. YEH
(TAIWAN, ROC) 85 DIAGNOSTICS OF A FILAMENT-ASSISTED DIAMOND GROWTH
ENVIRONMENT BY LASER SPECTROSCOPY N. OTA AND N. FUJIMORI (JAPAN) 89
INFLUENCE OF TRANSPORT AND CHEMICAL REACTION PROCESSES ON DIAMOND GROWTH
RATES, MORPHOLOGY AND QUALITY C. KOVACH, L. ZEATOUN, B. ROOZBEHANI, I.
GREBER AND J. C. ANGUS (USA) 93 PROBLEMS OF MEAN FREE PATH AND ELECTRIC
FIELD ON HOT FILAMENT DIAMOND CVD S. HONMA, H. SAITOH, T. ISHIGURO AND
Y. ICHINOSE (JAPAN) 97 DEVELOPMENT OF APPARATUS USING PENNING ION SOURCE
FOR SYNTHESIS OF THIN FILMS A. HIRATA, T. TATAMI AND M. YOSHIKAWA
(JAPAN) 101 X11I ON COMBUSTION SYNTHESIS OF DIAMOND FILMS BY A MODIFIED
TORCH D.-Y. WANG, C.-C. WANG AND S.-R. CHANG (TAIWAN, ROC) 105
LASER-INDUCED TRANSFER OF ULTRAFINE DIAMOND PARTICLES FOR SELECTIVE
DEPOSITION OF DIAMOND FILMS S. M. PIMENOV, G. A. SHAFEEV, A. A. SMOLIN,
V. I. KONOV AND B. K. VODOLAGA (RUSSIA) 109 FORMATION OF DIAMOND
NANOCRYSTALS IN LASER-IRRADIATED AMORPHOUS CARBON FILMS L. C. NISTOR, J.
VAN LANDUYT, V. G. RALCHENKO, T. V. KONONENKO, E. D. OBRAZTSOVA AND V.
E. STRELNITSKY (BELGUIM) 113 DEPOSITION OF DIAMOND THIN FILMS BY
FILAMENT-ASSISTED EXCIMER LASER ABLATION OF GRAPHITE H. CHEN, N. MAFFEI
AND R. H. PRINCE (CANADA) 1 17 4. IN-SITU ANALYSIS 121 MICROWAVE CVD OF
DIAMOND: PLASMA DIAGNOSTICS AND DEPOSITION REACTOR MODELING T. A.
GROTJOHN, G. L. KING AND W.-Y. TAN (USA) 123 IN SITU DETECTION OF METHYL
RADICALS IN FILAMENT ASSISTED DIAMOND GROWTH ENVIRONMENT BY RESONANCE
IONIZATION SPECTROSCOPY N. OTA AND N. FUJIMORI (JAPAN) 127 CONTRIBUTION
TO THE MODELLING OF A MICROWAVE PACVD DIAMOND DEPOSITION REACTOR:
CHEMICAL KINETICS AND DIFFUSION TRANSPORT K. HASSOUNI, S. FARHAT, C. D.
SCOTT AND A. GICQUEL (FRANCE) 131 IN SITU PULSED RAMAN STUDY OF GROWING
PROCESS OF A DIAMOND FILM IN A MICROWAVE PLASMA REACTOR L. FAYETTE, B.
MARCUS, M. MERMOUX, N. ROSMAN, L. ABELLO AND G. LUCAZEAU (FRANCE) 135 5.
NUCLEATION AND GROWTH OF DIAMOND FILMS 139 DIAMOND GROWTH MECHANISMS:
INFLUENCE ON GROWTH RATES AND QUALITY J. C. ANGUS, E. A. EVANS AND Y.
WANG (USA) 141 SYNTHESIS OF VERY THIN DIAMOND FILM ON SI SUBSTRATE
PRETREATED IN FLUIDIZED BED T. TAKARADA, T. OKAZAKI, H. TAKEZAWA, K.
KATO AND Y. NAKAIKE (JAPAN) 145 XIV CONTROL OF TWIN FORMATION: A
PREREQUISITE FOR THE GROWTH OF THICK ORIENTED DIAMOND FILMS C. WILD, N.
HERRES, R. LOCHER, W. MULLER-SEBERT AND P. KOIDL (GERMANY) 149
NUCLEATION OF DIAMOND BY CHEMICAL VAPOR DEPOSITION IN BIAS-ENHANCED
MICROWAVE PLASMA H. MAEDA, M. IRIE, K. KUSAKABE AND S. MOROOKA (JAPAN)
153 INVESTIGATION OF NUCLEATION DENSITY AND GROWTH RATE OF DIAMOND
CRYSTALS DEPOSITED BY GLOW DC DISCHARGE PLASMA CVD N. V. SAMOKHVALOV, V.
E. STREL'NITSKIJ, V. A. BELOUS, E. D. OBRAZTSOVA AND V. G. RAL'CHENKO
(UKRAINE) 157 ROLE OF THE SUBSTRATE ON THE NUCLEATION AND THE CRYSTAL
GROWTH OF DIAMOND THROUGH CVD METHODS G. DEMAZEAU, D. MICHAU, B. TANGUY,
J. GRIM, J. DELAFOND, M. JAOUEN, R. CAVAGNAT AND M. COUZI (FRANCE) 163
DIAMOND NUCLEATION ON STRESSED SUBSTRATES K. K. HIRAKURI, N. MUTSUKURA
AND Y. MACHI (JAPAN) 167 ULTRA-HIGH NUCLEATION DENSITY FOR DIAMOND FILM
GROWTH AT 470 AND 900C G.-S. YANG, M. ASLAM, M. ULCZYNSKI AND D. K.
REINHARD (USA) 171 SOME APPLICATIONS OF DIAMOND NUCLEATION BY THE
BIAS-PRETREATMENT METHOD S. YUGO, K. SEMOTO, K. HOSHINA AND T. KIMURA
(JAPAN) 175 FORMATION OF DIAMOND FILMS ON CARBONIZED SI SUBSTRATE BY
INTERMITTENT DISCHARGE PLASMA CVD M. NODA, H. KUSAKABE AND S. MARUNO
(JAPAN) 179 INVESTIGATION OF DIAMOND FILMS DEPOSITED ON ISOTROPIC
ARTIFICIAL GRAPHITE AND ITS APPLICATIONS TO BIOMEDICAL ENGINEERING Y.-H.
LEE AND L.-R. HONG (TAIWAN, ROC) 183 DIAMOND SYNTHESIS ON THE ROW-SOOT
COATED SUBSTRATES Y. SAKAMOTO AND M. TAKAYA (JAPAN) 187 SEEDING WITH
ULTRAFINE DIAMOND PARTICLES FOR DIAMOND SYNTHESIS BY CVD H. MAKITA, T,
YARA, K. NISHIMURA, A. HATTA, T. ITO AND A. HIRAKI (JAPAN) 191
DEPOSITION OF DIAMOND ON THE POLYCRYSTALLINE NICKEL SUBSTRATE X. QIAO,
O. FUKUNAGA, T. TSURUMI, N. OHASHI, N. SHINODA AND K. YUI (JAPAN) 195 XV
DEPOSITION OF DIAMOND ON MO SUBSTRATE FROM PLASMAS PREPARED USING CH 4
AND CO AS CARBON SOURCES IN MICROWAVE DISCHARGE H. SHIKANO, T. KOTAKI
AND O. MATSUMOTO (JAPAN) 199 MICROSTRUCTURE OF BORON-DOPED DIAMOND FILMS
N. KIKUCHI, Y. OHSAWA, H. YOSHIKAWA AND M. KITAGAWA (JAPAN) 203 THE
PRODUCTION OF CVD DIAMOND-COATED WIRES AND FREE-STANDING DIAMOND TUBES
P. W. MAY, C. A. REGO, M. N. R. ASHFOLD, K. N. ROSSER, N. M. EVERITT, P.
G. PARTRIDGE, Q. S. CHIA AND G. LU (UK) 211 EFFECT OF ARGON ON THE
INTERNAL STRESS OF CVD DIAMOND FILM ON SILICON C. T. HWANG, Y. H. CHIOU,
S. L. SUNG, Y. S. CHANG AND H. C. SHIH (TAIWAN, ROC) 215 CHANGE IN
NUCLEATION DENSITY FOR CVD DIAMONDS ON SI SUBSTRATE SUBJECTED TO
DIFFERENT ANNEALING CONDITIONS C. L. FRITZEN, R. P. LIVI, E. H. DA
JORNADA AND J. A. H. DA JORNADA (BRASIL) 221 NUCLEATION AND GROWTH OF
DIAMOND IN AN ENCLOSED OXYACETYLENE COMBUSTION SYSTEM A. SOMASHEKHAR, S.
P. BOZEMAN, J. T. GLASS, P. W. MORRISON AND J. T. PRATER (USA) 225 6.
EPITAXIAL GROWTH 229 EFFECT OF TEXTURE ORIENTATION ON THE GROWTH OF
HIGHLY ORIENTED TEXTURED DIAMOND FILM ON SI SUBSTRATE Y.-J. BAIK AND K.
Y. EUN (KOREA) 231 OPTIMIZATION OF THE TEXTURE OF EPITAXIALLY NUCLEATED
DIAMOND FILMS ON SILICON R. HESSMER, M. SCHRECK, S. GEIER, B.
RAUSCHENBACH AND B. STRITZKER (GERMANY) 235 SURFACE STRUCTURE AND
MORPHOLOGY OF DIAMOND EPITAXIAL FILMS T. TSUNO, T. IMAI, S. SHIKATA AND
N. FUJIMORI (JAPAN) 241 CROSS-SECTIONAL TEM OBSERVATION OF HOMOEPITAXIAL
DIAMOND M. TARUTANI, T. ANDO, Y. TAKAI, M. KAMO AND R. SHIMIZU (JAPAN)
247 THE DEFECT MICROSTRUCTURE OF THICK HOMOEPITAXIAL DIAMOND FILMS D. R.
BLACK, H. E. BURDETTE, L. ROBINS, M. A. PIANO, M. D. MOYER, M. A.
MORENO, L. S. PAN, D. R. KANIA AND W. F. BANHOLZER (USA) 251 XVI A
CALCULATION OF DIAMOND C(001)-2XL, 2X2 SURFACES BY USING THE
FIRST-PRINCIPLES MOLECULAR DYNAMICS K. KOBAYASHI (JAPAN) 255 MPACVD
DIAMOND HOMOEPITAXIAL GROWTH: ELECTRON BACK SCATTER PATTERN AND POLE
FIGURE ANALYSES OF THE GROWN LAYERS C. FINDELING-DUFOUR, F. SILVA, R.
CHIRON, A. VIGNES AND A. GICQUEL (FRANCE). 259 ELECTROLUMINESCENCE OF
HOMOEPITAXIAL DIAMOND FILM AND SYNTHETIC INSULATING DIAMOND A. A.
MELNIKOV, A. V. DENISENKO, A. M. ZAITSEV, V. S. VARICHENKO, V. P.
VARNIN, I. G. TEREMETSKAJA, V. A. LAPTEV, JU. A. PALYANOV, W. R. FAHRNER
AND B. BURCHARD (RUSSIA) 263 INITIAL STAGE OF HIGHLY ORIENTED, TEXTURED
DIAMOND PARTICLES ON SI(OOL) AND P-SIC(OOL) T. SUESADA, K. OHTANI, N.
NAKAMURA AND H. KAWARADA (JAPAN) 267 GROWTH OF ORIENTED DIAMOND
PARTICLES ON 6H-TYPE OF SIC AND GRAPHITE FLAKES T. SUZUKI, M. YAGI AND
K. SHIBUKI (JAPAN) 271 METHODS OF CHARACTERIZING THE TEXTURE OF CVD
DIAMOND FILMS S. GEIER, M. SCHRECK, R. HESSMER, B. RAUSCHENBACH, B.
STRITZKER, K. HELMING ANDK. KUNZE (GERMANY) 275 CHARACTERIZATION OF
HIGHLY ORIENTED POLYCRYSTALLINE DIAMOND FILMS GROWN IN A NIRIM-TYPE
REACTOR T. TACHIBANA, K. HAYASHI AND K. KOBASHI (JAPAN) 279 ORIENTED
DIAMOND PARTICLES ON COPPER SUBSTRATES T. ISHIKURA, S. YAMASHITA, S.
OJIKA AND H. KAWARADA (JAPAN) 283 ORIENTED GROWTH OF DIAMOND ON {111}
AND {100} OF CUBIC BORON NITRIDE USING COMBUSTION FLAME TECHNIQUE Y.
IMABAYASHI, H. SAITOH AND R. URAO (JAPAN) 287 CHARACTERISTIC OF
EPITAXIAL GROWTH OF DIAMOND FILMS ON CUBIC BORON NITRIDE SURFACE BY DC
GLOW DISCHARGE CHEMICAL VAPOR DEPOSITION G. ZOU, C. GAO, Z. JIN, T.
ZHANG AND X. LU (P. R. CHINA) 291 MOSAIC GROWTH OF DIAMOND G. JANSSEN
AND L. J. GILING (THE NETHERLANDS) 295 XV11 7. CHARACTERIZATION 299
APPLICATIONS OF EXCITONIC EMISSIONS FROM DIAMONDS H. KAWARADA, T.
TSUTSUMI AND J. IMAMURA (JAPAN) 301 FOURIER TRANSFORM
CATHODOLUMINESCENCE SPECTROSCOPY OF DIAMOND A. T. COLLINS, E. C.
LIGHTOWLERS, V. HIGGS, L. ALLERS AND S. J. SHARP (UK) 307 OPTICAL DEFECT
CENTRES IN RANDOM POLYCRYSTALLINE AND (100) HIGHLY ORIENTED DIAMOND
FILMS D. BUHAENKO, C. BEER, P. ELLIS, L. WALKER, B. STONER, G. TESSMER
AND R. FAUBER (UK) 31 1 NEW CATHODOLUMINESCENCE FROM BORON-DOPED DIAMOND
S. C. LAWSON, H. KANDA, H. KIYOTA, T. TSUTSUMI AND H. KAWARADA (JAPAN)
315 RADIATIVE RECOMBINATION PROCESSES IN SEMICONDUCTING DIAMOND J. A.
FREITAS, JR., P. B. KLEIN AND A. T. COLLINS (USA) 321 ASPECTS OF NATURAL
GEM DIAMOND C. M. WELBOURN (UK) 327 THE IONIZED A-CENTRE AND OTHER
DI-NITROGEN DEFECTS IN DIAMOND M. E. NEWTON, O. D. TUCKER AND J. M.
BAKER (UK) 333 ELECTRONIC STRUCTURE OF NI-ION IN DIAMOND STUDIED BY A
DV-XA METHOD N. OHASHI, O. FUKUNAGA, J. TANAKA, J. ISOYA AND S. TANAKA
(JAPAN) 337 BORON AND NITROGEN ANALYSIS IN CVD DIAMOND FILMS USING COLD
NEUTRON DEPTH PROFILING G. P. LAMAZE, A. BADZIAN, T. BADZIAN, R. G.
DOWNING AND L. PILIONE (USA). 341 RECENT DEVELOPMENTS IN THE THERMAL
CONDUCTIVITY OF CVD DIAMOND J. E. GRAEBNER (USA) 345 ESR STUDIES OF
POINT DEFECTS IN SYNTHETIC DIAMOND CRYSTALS J. ISOYA, H. KANDA AND Y.
MORITA (JAPAN) 351 HIGH QUALITY SEMICONDUCTING DIAMOND FILMS AND DEVICES
J. T. GLASS, D. L. DREIFUS, R. E. FAUBER, B. A. FOX, M. L. HARTSELL, R.
B. HENARD, J. S. HOLMES, D. MALTA, L. S. PIANO, A. J. TESSMER, G. J.
TESSMER AND H. A. WYNANDS (USA) 355 XV111 DIAMOND FILMS CO-DOPED WITH
PHOSPHORUS AND NITROGEN L. J. GILING, Y. S. WANG, G. Z. CAO, G. J.
BAUHUIS AND P. F. A. ALKEMADE (THE NETHERLANDS) 359 EXCITON
RECOMBINATION RADIATION FROM COMBUSTION FLAME DIAMOND T. TSUTSUMI, J.
IMAMURA, M. SUZUKI, S. TAKEUCHI, M. MURAKAWA AND H. KAWARADA (JAPAN) 363
TIME DEPENDENT CATHODOLUMINESCENCE (CL) MEASUREMENT OF DIAMOND J. H.
WON, H. YAGI, N. EIMORI, H. YAGYU, A. HATTA, Y. MORI, T. ITO, T. SASAKI
AND A. HIRAKI (JAPAN) 367 LOW TEMPERATURE MICRO-PHOTOLUMINESCENCE OF
DEFECT CENTERS IN CVD DIAMOND FILMS T. S. MCCAULEY AND Y. K. VOHRA (USA)
371 PULSED RAMAN SET UP FOR CHARACTERIZATION OF DIAMOND FILM DURING ITS
GROWING PROCESS IN A DC PLASMA JET CVD REACTOR N. ROSMAN, L. ABELLO, G.
LUCAZEAU, J. P. CHABERT, T. PRIEM AND E. DASILVA (FRANCE) 375 OPTICAL
PROPERTIES OF DIAMOND PLATES SYNTHESIZED BY ARC DISCHARGE PLASMA JET
CHEMICAL VAPOR DEPOSITION A. HIRATA AND M. YOSHIKAWA (JAPAN) 379
MICROSTRUCTURE CONTROL AND SURFACE POLISHING OF CVD DIAMOND THIN FILM
FOR OPTICAL APPLICATION S. K. CHOI, S. K. JUNG, Y. H. JIN, Y. S. PARK,
S. H. KIM AND J. W. LEE (KOREA). 383 SPECTROPHOTOMETRIC
CHARACTERIZATION OF ROUGH DIAMOND LAYERS ON SILICON R. PETRICH AND O.
STENZEL (GERMANY) 387 APPLICATIONS OF ISOPURE AND NATURAL ABUNDANCE
SYNTHETIC DIAMONDS IN HIGH PRESSURE RESEARCH Y. K. VOHRA, T. S.
MACCAULEY AND S. S. VAGARALI (USA) 391 SPECTRAL HOLE BURNING IN
REACTOR-TREATED DIAMOND MATERIALS I. SILDOS AND A. OSVET (ESTONIA) 395
FACTORS INFLUENCING THERMAL CONDUCTIVITY IN DIAMOND FILM C. GU, Z. JIN,
C. WANG, X. LU, G. ZOU, J. ZHANG AND R. FANG (P. R. CHINA) 399 THERMAL
CONDUCTIVITY OF DIAMOND-BASED SILICON-ON-INSULATER STRUCTURES C. GU, Z.
JIN, C. WANG, X. LU, G. ZOU, J. ZHANG AND R. FANG (P. R. CHINA) 403 XIX
STRUCTURAL IMPERFECTIONS IN CVD DIAMOND FILMS Y. SHOW, M. IWASE AND T.
IZUMI (JAPAN) 407 QUANTITATIVE ANALYSIS OF HYDROGEN IN CHEMICAL VAPOR
DEPOSITED DIAMOND H. YAGI, K. NISHIMURA, Y. MORI, A. HATTA, T. ITO AND
A. HIRAKI (JAPAN) 41 1 THEORETICAL ANALYSIS OF
PNEUMATOLYTIC-HYDROTHERMAL ENVIRONMENT AS POTENTIAL SOURCE OF DIAMONDS
IN EARTH'S CRUST A. NIEDBALSKA, R. SAFACIRISKI, J. SENTEK AND A.
SZYMAIISKI (POLAND) 415 INCORPORATION OF FILAMENT MATERIAL IN DIAMOND
FILMS PREPARED BY HOT FILAMENT CVD M. TOGUCHI, A. HIGA, A. FUKUDA AND A.
HIRAKI (JAPAN) 419 8. SURFACE STRUCTURE AND MODIFICATION 423 SURFACE
PROCESSES IN DIAMOND CHEMICAL VAPOR DEPOSITION M. P. D'EVELYN, R. E.
RAWLES, T. I. HUKKA AND T. A. PAKKANEN (USA) 425 OXIDATION OF DIAMOND
SURFACES STUDIED BY FTIR, TPD AND TPR SPECTROSCOPIES T. ANDO, K.
YAMAMOTO, M. ISHII, M. KAMO AND Y. SATO (JAPAN) 431 SCANNING TUNNELLING
MICROSCOPY DETERMINATION OF ORTHOGONAL DIMER STEP GROWTH OF
HOMOEPITAXIAL P-TYPE (100) DIAMOND H. MAGUIRE, T. ANDO, M. KAMO, W.
ZIMMERMAN-EDLING AND H.-G. BUSMANN (UK) 435 STRUCTURE ANALYSIS OF THE
DIAMOND (100) SURFACE [LOW-ENERGY ELECTRON DIFFRACTION (LEED)] H.
YAMAZAKI AND T. OGIO (JAPAN) 439 OPTICAL STUDIES ON ION-BEAM-DOPED
DIAMOND LAYERS J. F. PRINS (SOUTH AFRICA) 443 P-TYPE DOPING OF DIAMOND
BY BORON ION IMPLANTATION R. KALISH, C. UZAN-SAGUY AND A. SAMOILOFF
(ISRAEL) 449 BASIC STUDY ON LASER-ASSISTED ETCHING OF DIAMOND H.
MIYAZAWA, S. MIYAKE, T. MIYAZAKI, S. WATANABE AND M. MURAKAWA (JAPAN)
453 EXCHANGE OF HYDROGEN ON DIAMOND (111) SURFACE WITH GAS-PHASE
DEUTERIUM T. AIZAWA, T. ANDO, M. KAMO AND Y. SATO (JAPAN) 457 XX A
VIBRATIONAL SPECTROSCOPIC STUDY OF HYDROGENATED DIAMOND SURFACES
BYLNFRARED-VISIBLE SUM-FREQUENCY GENERATION (SFG) T. ANDO, T. AIZAWA, M.
KAMO, Y. SATO, T. ANZAI, H. YAMAMOTO, A. WADA, K. DOMEN AND C. HIROSE
(JAPAN) 461 A SURFACE SCIENCE STUDY ON ELEMENTARY STEPS IN LOW-PRESSURE
DIAMOND SYNTHESIS J. BIENER, A. SCHENK, B. WINTER, C. LUTTERLOH AND J.
KIIPPERS (GERMANY) 465 STRUCTURE OF CVD DEPOSITED DIAMOND (001) 2X1
SURFACE M. KITABATAKE, M. DEGUCHI AND T. HIRAO (JAPAN) 469 THEORETICAL
STUDY OF BOND EXCHANGE MECHANISM DURING CVD GROWTH OF DIAMOND T. OGITSU,
T. MIYAZAKI, M. FUJITA AND M. OKAZAKI (JAPAN) 473 VALENCE-BAND
PHOTOEMISSION STUDY OF HYDROGENATED DIAMOND (111) SURFACES K. YAMAMOTO,
S. SUEHARA, T. ANDO, S. HISHITA, M. KAMO AND Y. SATO (JAPAN) 477
COMPOSITIONAL INHOMOGENEITY OF DIAMOND-GROWN SI SUBSTRATES EVALUATED BY
AUGER ELECTRON SPECTROSCOPY S. TANAKA, K. IKOMA, H. KIYOTA, J. TANAKA,
M. KAMO AND Y. SATO (JAPAN) 481 MOLECULAR BEAM MASS SPECTROMETRIC STUDY
OF THE SPATIAL DISTRIBUTION OF GAS-PHASE SPECIES INVOLVED IN THE GROWTH
OF HFCVD DIAMOND FILMS C. A. REGO, P. W. MAY, C. R. HENDERSON, M. N. R.
ASHFOLD, K. N. ROSSER AND N. M. EVERITT (UK) 485 SPUTTERING RATE OF
POLYCRYSTALLINE DIAMOND FILM USING ARGON ION BEAM T. KYUNO, H. SAITOH
AND R. URAO (JAPAN) 489 PATTERNING OF DIAMOND FILMS BY DIRECT LASER
WRITING: SELECTIVE-AREA DEPOSITION, CHEMICAL ETCHING AND SURFACE
SMOOTHING V. G. RALCHENKO, K. G. KOROTOUSHENKO, A. A. SMOLIN AND V. I.
KONOV (RUSSIA) 493 DIAMOND PROCESSING BY EXCIMER LASER ABLATION K.
HARANO, N. OTA AND N. FUJIMORI (JAPAN) 497 EXCIMER LASER PROCESSING OF
DIAMOND FILMS H. SUZUKI, M. YOSHIKAWA AND H. TOKURA (JAPAN) 501 XXI 9.
HIGH-PRESSURE SYNTHESIS 505 CLASSIFICATION OF THE CATALYSTS FOR DIAMOND
GROWTH H. KANDA (JAPAN) 507 THE FEATURES OF THE PROCESS OF DIAMOND
FORMATION FROM SIC UNDER HIGH PRESSURE AND HIGH TEMPERATURE L. GOU, S.
HONG AND Q. GOU (P. R. CHINA) 513 GROWTH MORPHOLOGY AND PHYSICAL
PROPERTIES OF DIAMOND GROWN IN PHOSPHORUS CATALYST M. AKAISHI, H. KANDA,
T. ANDO, J. TANAKA, M. KAMO, Y. SATO AND S. YAMAOKA (JAPAN) 517 CRYSTAL
GROWTH OF DIAMOND FROM REGROWTH-TREATED GRAPHITE Y. WANG, R. TAKANABE,
H. KAGI, K. J. TAKANO AND M. WAKATSUKI (JAPAN) 521 IMPURITIES OF COBALT
AND MANGANESE IN ARTIFICIAL DIAMOND X.-P. JIA, H. KAGI, S. HAYAKAWA, M.
WAKATSUKI AND Y. GOHSHI (JAPAN) 525 FACTORS WHICH INFLUENCE THE STRENGTH
DISPERSION OF SYNTHETIC DIAMONDS A. MANESCU, M. FECIORU AND O. CELEA
(ROMANIA) 529 FABRICATION OF DIAMOND-CONTAINING INORGANIC COMPOSITES BY
HOT ISOSTATIC PRESSING S. KUME, K. SUZUKI AND H. YOSHIDA (JAPAN) 533
FORMATION OF SOLID SOLUTIONS OF BORON NITRIDE AND CARBON; RECRYSTALLIZED
PRODUCTS OF FLASH-HEATING EXPERIMENTS H. KAGI, I. TSUCHIDA AND M.
WAKATSUKI (JAPAN) 537 MOLECULAR ORBITAL CALCULATION AND AUGER ELECTRON
SPECTROSCOPY OF CUBIC BORON NITRIDES Y. SUETSUGU, J. TANAKA, T.
TANIGUCHI, S. TANAKA AND K. KOBAYASHI (JAPAN) 541 NEW DEVELOPMENTS IN
C-BN SYNTHESIS UNDER HIGH PRESSURE-HIGH TEMPERATURE CONDITIONS G.
DEMAZEAU, L. VEL-BOUTINAUD, V. GONNET, M. JAOUEN, TH. CABIOCH AND G. HUG
(FRANCE) 545 SYNTHESIS OF CUBIC BORON NITRIDE BY CALIBN 2 CATALYST AT
HT/HP H. FUJIOKA, N. OHASHI, T. TSURUMI, O. FUKUNAGA AND S. NAKANO
(JAPAN) 551 FORMATION OF CUBIC BORON NITRIDE FROM A MIXTURE OF FE,N AND
FEB W. LI, H. KAGI AND M. WAKATSUKI (JAPAN) 555 XX11 MICRON CBN POWDER
PRODUCED BY HP/HT SYNTHESIS M. FECIORU, G. DINCA, P. GEORGEONI, G. CALU,
G. BALUTA AND M. DEJU (ROMANIA) 559 EFFECTS OF AMMONIUM HALIDE ADDITIONS
ON CUBIC BORON NITRIDE GROWTH IN VARIOUS CATALYST-BN SYSTEMS G. DINCA,
P. GEORGEONI, G. CALU, G. BALUTA AND M. DEJU (ROMANIA) 563 10. SHOCK
SYNTHESIS 567 MECHANISM OF DIAMOND SYNTHESIS FROM HIGH EXPLOSIVES V.
ANISICHKIN AND D. DOLGUSHIN (RUSSIA) 569 PROCESS OF C M FULLERENE
COLLAPSE TO SP 3 BOND FORMATION UNDER SHOCK COMPRESSION H. HIRAI, K.
KONDO AND N. YOSHIZAWA (JAPAN) 573 CARBON PHASES QUENCHED FROM
SHOCK-COMPRESSED FULLERITES T. SEKINE (JAPAN) 577 SHOCK TREATMENT OF
DIAMOND AND CARBON CONTAINING POWDERS G. BURKHARD, K. DAN, Y. TANABE, A.
B. SAWAOKA AND K. YAMADA (JAPAN) 581 PREDOMINANT PARAMETERS IN THE
SHOCK-SYNTHESIS OF DIAMOND K. KONDO, H. HIRAI AND S. KUKINO (JAPAN) 585
ULTRA-DISPERSED DETONATION DIAMONDS: PROPERTIES AND APPLICATION V. F.
KOMAROV, E. A. PETROV, G. V. SAKOVITCH AND A. V. KLIMOV (RUSSIA) 589 11.
DLC AND OTHER FILMS 593 PREPARATION OF CUBIC BORON NITRIDE FILMS BY
PHASE REGULATED RF BIAS SPUTTERING O. TSUDA, J. FUJIKATA, Y. YAMADA AND
T. YOSHIDA (JAPAN) 595 LOW TEMPERATURE EPR STUDY OF A-C:H FILMS HAVING
DIFFERENT PHYSICAL PROPERTIES C. DE MARTINO, F. DEMICHELIS, M.
FANCIULLI, S. SCHREITER AND A. TAGLIAFERRO (ITALY) 599 BIOCOMPATIBLE
CARBON COATINGS: EVALUATION OF PHYSICAL PROPERTIES P. AMI, C. DE
MARTINO, F. DEMICHELIS, M. SANTI, A. TAGLIAFERRO AND F. VALLANA (ITALY)
603 XXU1 NEW MODEL FOR THE PHOTOLUMINESCENCE BEHAVIOUR OF A-C:H FILMS C.
DE MARTINO, F. DEMICHELIS, A. HAMMERSCHMIDT, S. SCHREITER AND A.
TAGLIAFERRO (ITALY) 607 STRUCTURE AND MECHANICAL PROPERTIES OF A-C:H
FILMS CONTAINING NITROGEN K.-R. LEE AND K. Y. EUN (KOREA) 61 1
PICOSECOND PHOTOLUMINESCENCE IN FLUORINE IMPLANTED A-C:H FILMS S. PENG,
X. HUANG, Y. TAO, D. LIU, N. KE AND S. P. WONG (P. R. CHINA) 615 THE
EFFECT OF SUB-THRESHOLD CO 2 LASER IRRADIATION ON THE IR PROPERTIES OF
MAGNETRON SPUTTERED DLC ON KCL SUBSTRATE F. X. LU, D. G. CHENG, R. Z.
YE, Q. B. SUN, W. X. YU, B. SONG, D. Z. GONG AND G. WANG (P. R. CHINA)
619 DLC FORMATION IN POLYIMIDE SURFACE LAYER BY ION IMPLANTATION H.
WATANABE, A. FUKUDA, K. TAKAHASHI AND M. IWAKI (JAPAN) 623 TRANSPORT IN
FLUORINE IMPLANTED A-C:H THIN FILMS S. P. WONG, N. KE AND S. PENG (HONG
KONG) 627 PROPERTIES OF BORON NITRIDE FILMS SYNTHESIZED BY ION BEAM AND
VAPOR DEPOSITION S. NISHIYAMA, A. EBE, Y. IWAMOTO AND K . OGATA (JAPAN)
631 12. ELECTRICAL PROPERTIES AND APPLICATIONS 635 SURFACE FERMI LEVEL
POSITION OF DIAMOND TREATED WITH PLASMA T. SUGINO, A. FURUKAWA, K.
KARASUTANI, Y. SAKAMOTO AND J. SHIRAFUJI (JAPAN). 637 FABRICATION OF
DIAMOND-BASED FETS USING ION IMPLANTATION C. A. HEWETT AND J. R. ZEIDLER
(USA) 641 THIN FILM DIAMOND MIS STRUCTURES USING HIGHLY POLARIZABLE GATE
INSULATORS S. SUZUKI, Y. OTSUKA, T. ARIKI, S. SHIKAMA, T. MAKI AND T.
KOBAYASHI (JAPAN). 653 VARIOUS FEATURES OF METAL/INTRINSIC
DIAMOND/SEMICONDUCTING DIAMOND DIODES K. MIYATA, Y. YOKOTA, K. SAITO AND
K. KOBASHI (JAPAN) 657 FABRICATION OF A GATE-RECESSED-STRUCTURE MESFET
ON DIAMOND FILMS H. SHIOMI, Y. NISHIBAYASHI, N. TODA, S. SHIKATA AND N.
FUJIMORI (JAPAN) 661 XXIV A PROPOSED NOVEL APPLICATION OF THIN OVERLAY
DIAMOND FILMS FOR IMPROVED THERMAL MANAGEMENT BUDGET OF SHORT GATE HIGH
POWER DEVICES S. ROTTER (ISRAEL) 665 HIGH TEMPERATURE ELECTRONIC
APPLICATIONS OF DIAMOND I. M. BUCKLEY-GOLDER, P. R. CHALKER, C.
JOHNSTON, S. ROMANI AND M. WERNER (UK) 669 CHARACTERISTIC OF
PHOTOCONDUCTIVE SWITCH WITH DIAMOND THIN FILM Y. AIKAWA, K. BABA, N.
SHOHATA, H. YONEDA AND K. UEDA (JAPAN) 679 FIELD EMISSION FROM VAPOR
DEPOSITED P-TYPE POLYCRYSTALLINE DIAMOND D. HONG AND M. ASLAM (USA) 683
DIAMOND DETECTORS FOR EXPERIMENTS AT HIGH LUMINOSITY COLLIDERS K. K.
GAN, F. BORCHELT, W. DULINSKI, D. FUJINO, R. GILMAN, S. HAN, J. HASSARD,
A. HOWARD, H. KAGAN, D. KANIA, R. KASS, S. K. KIM, G. KUMBARTSKI, M. H.
LEE, G. LU, E. NYGARD, R. MALCHOW, L. S. PAN, S. SCHNETZER, R. STONE, J.
STRAVER, R. J. TESEREK, W. TRISCHUK, G. THOMSON, P. WEILHAMMER, C.
WHITE, R. L. WOODIN, S. ZHAO, M. ZOELLER AND Y. SUGIMOTO (USA) 687
MICROELECTRONIC PRESSURE SENSOR WITH DIAMOND PIEZORESISTORS ON DIAMOND
DIAPHRAGM J. L. DAVIDSON, D. R. WUR, W. P. KANG, D. KINSER, D. V. KERNS,
J. P. WANG AND Y. C. LING (USA) 693 2.5GHZ SAW BANDPASS FILTER USING
POLYCRYSTALLINE DIAMOND S. SHIKATA, H. NAKAHATA, K. HIGAKI, S. FUJII, A.
HACHIGO AND N. FUJIMORI (JAPAN) 697 GROWTH AND CHARACTERIZATION OF CVD
DIAMOND FILMS DOPED WITH PHOSPHOROUS K. BEKKU, Y. MORI, N. EIMORI, H.
MAKITA, A. HATTA, T. ITO AND A. HIRAKI (JAPAN) 701 ELECTRICAL
CHARACTERIZATION OF BORON-DOPED POLYCRYSTALLINE DIAMOND FILMS
SYNTHESIZED BY HOT-FILAMENT CVD T. SUGINO, K. KARASUTANI, H. KATAOKA, K.
KOBASHI AND J. SHIRAFUJI (JAPAN) 705 EFFECTS OF ANNEALING ON THE
ELECTRICAL PROPERTIES OF BORON-DOPED DIAMOND FILMS C.-F. CHEN AND S. H.
CHEN (TAIWAN, ROC) 709 FORMATION OF CARBIDE OHMIC CONTACTS FOR P-TYPE
DIAMOND A. OTSUKI, J . NAKANISHI, G. KAWAGUCHI, T. OKU AND M. MURAKAMI
(JAPAN) 713 XXV THERMALLY STABLE OHMIC CONTACT TO BORON DOPED DIAMOND
FILMS Y. NISHIBAYASHI, N. TODA, H. SHIOMI AND S. SHIKATA (JAPAN) 717
2D-SIMULATION OF DIAMOND BASED ELECTRONIC DEVICES B. BURCHARD, A. V.
DENISENKO, A. A. MELNIKOV, A. M. ZAITSEV, W. R. FAHRNER, F. PETERMANN,
K. HOPPE AND B. STANSKI (GERMANY) 721 CHARACTERISTICS OF POLYCRYSTALLINE
DIAMOND FILM MISFET AND ITS DEVICE MODELING K. NISHIMURA, H. KOYAMA, K.
MIYATA AND K. KOBASHI (JAPAN) 725 FABRICATION OF MESFET UTILIZING
HYDROGEN-TERMINATED HOMOEPITAXIAL DIAMOND FILMS N. NAKAMURA, M. AOKI, M.
ITOH, N. JIN AND H. KAWARADA (JAPAN) 729 HOLE INJECTION AND OPTICAL
PROPERTIES OF EPITAXIAL DIAMOND P-I-P LAYERED STRUCTURE T. MAKI AND T.
KOBAYASHI (JAPAN) 733 OPTOELECTRONIC DEVICES BASED ON DIAMOND W. R.
FAHRNER, B. BURCHARD, A. M. ZAITSEV, A. A. MELNIKOV, A. V. DENISENKO AND
V. S. VARICHENKO (GERMANY) 737 ELECTROCHEMICAL ACTIVITY OF THE BORON
DOPED CVD DIAMOND FILMS S. YANG, J. ZHU, Y. YAO AND X. ZHANG (P. R.
CHINA) 741 13. MECHANICAL PROPERTIES AND APPLICATIONS 745 ULTRA
PRECISION CUTTING BITES OF CVD DIAMOND N. OYANAGI, T. OBATA AND K.
KOMAKI (JAPAN) 747 LAMINATED DIAMOND FILM CUTTER CONCEPT J. C. ROWLEY
(USA) 751 SYNTHESIS OF DIAMOND DIAPHRAGM BY DC PLASMA JET CVD K.
KURIHARA, K. SASAKI, T. ITANI, M. KAWARADA AND A. KODAIRA (JAPAN) 755
TECHNICAL COST MODELING: AN APPROACH TO PRODUCTION COST IDENTIFICATION
AND REDUCTION S. M. RIESTER, J. V. BUSCH AND D. G. GOODWIN (USA) 759
ADHESION OF DIAMOND FILM DEPOSITED ON CEMENTED CARBIDE SUBSTRATE T.
TSUTSUMOTO, A. NAKAO AND H. MATSUBARA (JAPAN) 763 XXVI INFLUENCE OF
SUBSTRATE MATERIALS ON THE ADHESION OF DC PLASMA JET CVD DIAMOND FILMS
K. SASAKI, K. KURIHARA, T. ITANI, M. KAWARADA AND A. KODAIRA (JAPAN) 767
EFFECT OF CRYSTALLINITY OF DIAMOND ON CUTTING PROPERTY OF CVD DIAMOND
BRAZED TOOL Y.-J. BAIK, K. Y. EUN, J. S. HAN AND J. W. RYU (KOREA) 771
DIAMOND DEPOSITION ON HARD MATERIALS BY HOT-FILAMENT CVD METHOD USING
TANTALUM CARBIDE FILAMENT K. KONOWA, H. MATSUBARA, S.-G. SHIN AND T.
TSUTSUMOTO (JAPAN) 775 APPLICATION OF POLYCRYSTALLINE CVD DIAMOND TO
INDENTER TIP OF SCRATCH TESTER S. TAKEUCHI AND M. MURAKAWA (JAPAN) 779
CUTTING PERFORMANCE OF CVD DIAMOND POLISHED BY THERMOCHEMICAL POLISHING
METHOD F. OKUZUMI, H. TOKURA AND M. YOSHIKAWA (JAPAN) 783 ANALYSIS OF
HOT FILAMENT CVD DIAMOND FILMS ON ETCHED AND UNETCHED WC-CO SURFACES N.
M. EVERITT, R. F. SILVA, J. VIEIRA, C. A. REGO, C. R. HENDERSON, P. W.
MAY AND M. N. R. ASHFOLD (UK) 787 DIAMOND DEPOSITION ON SINTERED
TUNGSTEN C. R. SHI, Y. AVYIGAL, S. DIRNFELD, A. HOFFMAN, A. FAYER AND R.
KALISH (P. R. CHINA) 791 EFFECT OF LASER IRRADIATION ON DIAMOND GROWTH
ON WC-6WT%CO HARD METAL SUBSTRATE F. X. LU, C. M. LI, J. J. WANG, Y.
TZENG, J. WEI, D. Z. GONG AND G. WANG (P. R. CHINA) 795 THE INFLUENCE OF
COATING THICKNESS IN SOLID PARTICLE EROSION OF DIAMOND COATINGS A.
ALAHELISTEN, P. HOLLMAN AND S. HOGMARK (SWEDEN) 799 AUTHOR INDEX 803 |
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| spelling | Advances in new diamond science and technology Fourth International Conference on New Diamond Science and Technology Kobe, Japan, July 18 - 22, 1994 ed. by S. Saito ... Tokio MYU 1994 XXVI, 809 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Diamond thin films Congresses Diamonds, Artificial Congresses Diamant (DE-588)4012069-7 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1994 Kobe gnd-content Diamant (DE-588)4012069-7 s DE-604 Saito, Shinroku Sonstige oth International Conference on New Diamond Science and Technology 4 1994 Kōbe Sonstige (DE-588)5233908-7 oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016392133&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Advances in new diamond science and technology Fourth International Conference on New Diamond Science and Technology Kobe, Japan, July 18 - 22, 1994 Diamond thin films Congresses Diamonds, Artificial Congresses Diamant (DE-588)4012069-7 gnd |
| subject_GND | (DE-588)4012069-7 (DE-588)1071861417 |
| title | Advances in new diamond science and technology Fourth International Conference on New Diamond Science and Technology Kobe, Japan, July 18 - 22, 1994 |
| title_auth | Advances in new diamond science and technology Fourth International Conference on New Diamond Science and Technology Kobe, Japan, July 18 - 22, 1994 |
| title_exact_search | Advances in new diamond science and technology Fourth International Conference on New Diamond Science and Technology Kobe, Japan, July 18 - 22, 1994 |
| title_exact_search_txtP | Advances in new diamond science and technology Fourth International Conference on New Diamond Science and Technology Kobe, Japan, July 18 - 22, 1994 |
| title_full | Advances in new diamond science and technology Fourth International Conference on New Diamond Science and Technology Kobe, Japan, July 18 - 22, 1994 ed. by S. Saito ... |
| title_fullStr | Advances in new diamond science and technology Fourth International Conference on New Diamond Science and Technology Kobe, Japan, July 18 - 22, 1994 ed. by S. Saito ... |
| title_full_unstemmed | Advances in new diamond science and technology Fourth International Conference on New Diamond Science and Technology Kobe, Japan, July 18 - 22, 1994 ed. by S. Saito ... |
| title_short | Advances in new diamond science and technology |
| title_sort | advances in new diamond science and technology fourth international conference on new diamond science and technology kobe japan july 18 22 1994 |
| title_sub | Fourth International Conference on New Diamond Science and Technology Kobe, Japan, July 18 - 22, 1994 |
| topic | Diamond thin films Congresses Diamonds, Artificial Congresses Diamant (DE-588)4012069-7 gnd |
| topic_facet | Diamond thin films Congresses Diamonds, Artificial Congresses Diamant Konferenzschrift 1994 Kobe |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016392133&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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