Semiconductor radiation detectors: device physics ; with 11 tables
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2007
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| Ausgabe: | 1. ed. |
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | Literaturverz. S. [341] - 347 |
| Beschreibung: | XI, 353 S. Ill., graph. Darst. |
| ISBN: | 9783540716785 3540716785 |
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| 245 | 1 | 0 | |a Semiconductor radiation detectors |b device physics ; with 11 tables |c Gerhard Lutz |
| 250 | |a 1. ed. | ||
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2007 | |
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Datensatz im Suchindex
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| adam_text |
GERHARD LUTZ
SEMICONDUCTOR
RADIATION DETECTORS
DEVICE PHYSICS
WITH 167 FIGURES AND 11 TABLES
4Y SPRINGER
CONTENTS
1. INTRODUCTION
PART I: SEMICONDUCTOR PHYSICS
2. SEMICONDUCTORS 7
2.1 CRYSTAL STRUCTURE 7
2.2 ENERGY BANDS 8
2.3 INTRINSIC SEMICONDUCTORS 11
2.4 EXTRINSIC SEMICONDUCTORS 14
2.5 CARRIER TRANSPORT IN SEMICONDUCTORS 16
2.5.1 DRIFT 17
2.5.2 DIFFUSION 17
2.5.3 MAGNETIC FIELD EFFECTS 19
2.6 CARRIER GENERATION AND RECOMBINATION IN SEMICONDUCTORS . 21
2.6.1 THERMAL GENERATION OF CHARGE CARRIERS 21
2.6.2 GENERATION OF CHARGE CARRIERS
BY ELECTROMAGNETIC RADIATION 22
2.6.3 GENERATION BY CHARGED PARTICLES 23
2.6.4 SHAPE OF A RADIATION-GENERATED CHARGE CLOUD 25
2.6.5 MULTIPLICATION PROCESSES 26
2.6.6 RECOMBINATION 28
2.6.7 CHARGE-CARRIER LIFETIME 29
2.6.8 CARRIER LIFETIME IN INDIRECT SEMICONDUCTORS 31
2.7 SIMULTANEOUS TREATMENT OF CARRIER GENERATION AND TRANSPORT 34
2.8 SUMMARY AND DISCUSSION 37
3. BASIC SEMICONDUCTOR STRUCTURES ' 39
3.1 THE P-N DIODE JUNCTION 39
3.1.1 A P-N DIODE IN THERMAL EQUILIBRIUM 39
3.1.2 A P-N DIODE WITH APPLICATION OF AN EXTERNAL VOLTAGE . 43
3.1.3 A P-N DIODE UNDER IRRADIATION WITH LIGHT 46
3.1.4 CAPACITANCE*VOLTAGE CHARACTERISTICS 49
3.1.5 BREAKDOWN UNDER STRONG REVERSE BIAS 51
3.2 METAL-SEMICONDUCTOR CONTACT 56
VIII CONTENTS
3.2.1 CURRENT-VOLTAGE CHARACTERISTICS 58
3.2.2 OHMIC CONTACT 59
3.3 METAL-INSULATOR-SEMICONDUCTOR STRUCTURE 59
3.3.1 THERMAL EQUILIBRIUM CONDITION 61
3.3.2 THE SI-SIO
2
MOS STRUCTURE 68
3.3.3 CAPACITANCE-VOLTAGE CHARACTERISTICS 69
3.3.4 NONEQUILIBRIUM AND A RETURN TO EQUILIBRIUM 70
3.4 THE N+-N OR P+-P STRUCTURES 72
3.5 SUMMARY AND DISCUSSION 73
PART II: SEMICONDUCTOR DETECTORS 77
4. SEMICONDUCTORS AS DETECTORS 79
4.1 THE PROPERTIES OF INTRINSIC SEMICONDUCTOR MATERIALS 79
4.2 PROPERTIES OF EXTRINSIC SEMICONDUCTOR MATERIALS 83
4.2.1 DOPING OF SEMICONDUCTORS 84
4.2.2 BULK DEFECTS 86
4.2.3 EFFECTS ON MATERIAL PROPERTIES 88
4.3 INSULATORS AND METALS 88
4.3.1 INSULATOR PROPERTIES 89
4.3.2 SEMICONDUCTOR SURFACE DEFECTS 89
4.3.3 METAL PROPERTIES 90
4.4 CHOICE OF DETECTOR MATERIAL 91
4.4.1 INTERACTION OF RADIATION WITH SEMICONDUCTORS 91
4.4.2 CHARGE COLLECTION AND MEASUREMENT PRECISION 92
5. DETECTORS FOR ENERGY AND RADIATION-LEVEL MEASUREMENT 95
5.1 UNBIASED DIODE 95
5.2 REVERSE-BIASED DIODE 100
5.2.1 CHARGE COLLECTION AND MEASUREMENT 102
5.2.2 SURFACE BARRIER DETECTORS 105
5.2.3 P-N JUNCTION DETECTORS 106
5.3 SUMMARY 107
6. DETECTORS FOR POSITION AND ENERGY" MEASUREMENT 109
6.1 RESISTIVE CHARGE DIVISION 109
6.2 DIODE STRIP DETECTORS .-.' 110
6.2.1 READOUT METHODS 112
6.2.2 CHARGE COLLECTION AND MEASUREMENT ACCURACY 114
6.2.3 CHOICE OF GEOMETRICAL PARAMETERS 115
6.3 STRIP DETECTORS WITH DOABLE-SIDED READOUT 116
6.4 STRIP DETECTORS
WITH INTEGRATED CAPACITIVE READOUT COUPLING 120
6.5 DRIFT DETECTORS 125
CONTENTS IX
6.5.1 LINEAR DRIFT DEVICES 127
6.5.2 MATRIX DRIFT DEVICES 132
6.5.3 RADIAL DRIFT DEVICES 133
6.5.4 SINGLE-SIDED STRUCTURED DEVICES 134
6.5.5 READOUT OF DRIFT DEVICES AND MEASUREMENT PRECISION . 136
6.6 CHARGE COUPLED DEVICES AS DETECTORS 137
6.6.1 THREE-PHASE "CONVENTIONAL" MOS CCDS 138
6.6.2 LINEAR AND MATRIX CCDS 140
6.6.3 CHARGE COLLECTION AND CHARGE TRANSPORT 140
6.6.4 SIGNAL READOUT 143
6.6.5 OTHER TYPES OF MOS CCDS 144
6.6.6 FULLY DEPLETED P-N CCDS 144
6.7 SUMMARY 151
7. THE ELECTRONICS OF THE READOUT FUNCTION 153
7.1 OPERATING PRINCIPLES OF TRANSISTORS 153
7.1.1 BIPOLAR TRANSISTORS 153
7.1.2 JUNCTION FIELD EFFECT TRANSISTORS 160
7.1.3 METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS . 165
7.1.4 THRESHOLD BEHAVIOR OF UNIPOLAR TRANSISTORS 175
7.1.5 THE DIFFERENT TYPES OF JFETS AND MOSFETS 178
7.2 NOISE SOURCES 180
7.2.1 THERMAL NOISE 180
7.2.2 LOW-FREQUENCY VOLTAGE NOISE 181
7.2.3 SHOT NOISE 181
7.2.4 NOISE IN TRANSISTORS 182
7.3 THE MEASUREMENT OF CHARGE 190
7.3.1 THE CHARGE-SENSITIVE AMPLIFIER 190
7.3.2 NOISE IN A CHARGE-SENSITIVE AMPLIFIER 191
7.3.3 FILTERING AND SHAPING 192
7.4 BASIC ELECTRONIC CIRCUITS 195
7.4.1 CURRENT SOURCES AND MIRRORS 196
7.4.2 INVERTERS 197
7.4.3 SOURCE FOLLOWERS 200
7.4.4 CASCODE AMPLIFIERS 201
7.4.5 DIFFERENTIAL AMPLIFIERS .! 202
7.5 INTEGRATED CIRCUIT TECHNOLOGIES 202
7.5.1 NMOS TECHNOLOGIES .:.'. 203
7.5.2 CMOS TECHNOLOGIES 205
7.5.3 BIPOLAR TECHNOLOGIES 206
7.5.4 SOI TECHNOLOGIES .'. 206
7.5.5 MIXED TECHNOLOGIES . I 207
7.6 INTEGRATED CIRCUITS FOR STRIP DETECTORS 207
7.7 INTEGRATED CIRCUITS FOR PIXEL DETECTORS 210
7.8 NOISE IN STRIP DETECTORS - FRONT-END SYSTEMS 211
7.8.1 BIASING CIRCUITS 212
X CONTENTS
7.8.2 NOISE IN BIASING CIRCUITS 216
7.8.3 NOISE CORRELATIONS 222
7.9 SUMMARY 225
8. THE INTEGRATION OF DETECTORS AND THEIR ELECTRONICS 229
8.1 HYBRID SYSTEMS OF DETECTORS AND THEIR ELECTRONICS 229
8.1.1 STRIP DETECTORS 229
8.1.2 PIXEL DETECTORS 231
8.2 DETECTOR-TECHNOLOGY-COMPATIBLE ELECTRONICS 233
9. DETECTORS WITH INTRINSIC AMPLIFICATION 239
9.1 AVALANCHE DIODE 239
9.2 DEPLETED FIELD EFFECT TRANSISTOR STRUCTURE 243
9.2.1 DEPLETED P-CHANNEL
MOS FIELD EFFECT TRANSISTOR (DEPMOSFET) 244
9.2.2 ELECTRICAL PROPERTIES AND DEVICE SCHEMATICS 247
9.2.3 OTHER TYPES OF DEPFET STRUCTURES 251
9.2.4 DEPFET PROPERTIES AND APPLICATIONS 253
9.3 DEPFET PIXEL DETECTORS 254
9.3.1 DEPFET PIXEL DETECTOR WITH RANDOM ACCESS READOUT 254
9.3.2 DEPFET PIXEL DETECTOR FOR CONTINUOUS OPERATION . 255
9.3.3 HYBRID DEPFET PIXEL DETECTOR 257
9.3.4 DEPFET PIXEL DETECTOR
WITH THREE-DIMENSIONAL ANALOG MEMORY 258
10. DETECTOR TECHNOLOGY 259
10.1 PRODUCTION OF DETECTOR SUBSTRATES 259
10.2 PROCESSING SEQUENCE IN PLANAR TECHNOLOGY 260
10.2.1 PHOTOLITHOGRAPHIC STRUCTURING 261
10.2.2 CHEMICAL ETCHING 261
10.2.3 DOPING 262
10.2.4 OXIDATION 263
10.2.5 DEPOSITION FROM THE GAS PHASE 263
10.2.6 METAL DEPOSITION 264
10.2.7 THERMAL TREATMENTS 264
10.2.8 PASSIVATION 265
10.3 TECHNOLOGY SIMULATION 266
11. DEVICE STABILITY AND RADIATION HARDNESS 267
11.1 ELECTRICAL BREAKDOWN AND PROTECTION 267
11.1.1 BREAKDOWN PROTECTION IN DIODE STRIP DETECTORS 268
11.1.2 BREAKDOWN PROTECTION OF THE DETECTOR RIM 273
11.2 RADIATION DAMAGE IN SEMICONDUCTORS 275
11.2.1 THE FORMATION OF PRIMARY LATTICE DEFECTS 276
CONTENTS XI
11.2.2 FORMATION AND PROPERTIES OF STABLE DEFECTS 277
11.2.3 ELECTRICAL PROPERTIES OF DEFECT COMPLEXES 279
11.2.4 EFFECTS OF DEFECTS ON DETECTOR PROPERTIES 288
11.2.5 ANNEALING OF RADIATION DAMAGE 296
11.2.6 REVERSE ANNEALING 300
11.2.7 PARAMETERIZATION OF RADIATION DAMAGE
FOR LOW-FLUX IRRADIATION 301
11.3 RADIATION DAMAGE IN THE SURFACE REGION 301
11.3.1 OXIDE DAMAGE 302
11.3.2 NONUNIFORMITY IN BULK DAMAGE NEAR THE SURFACE 303
11.4 RADIATION DAMAGE IN DETECTORS 303
11.5 RADIATION DAMAGE IN ELECTRONICS 307
11.6 RADIATION HARDENING TECHNIQUES 309
11.7 SUMMARY 310
12. DEVICE SIMULATION 313
12.1 MATHEMATICAL FORMULATION 313
12.1.1 POISSON AND CONTINUITY EQUATIONS 314
12.1.2 DEEP-LEVEL DEFECTS IN STATIONARY SITUATIONS '. 315
12.1.3 QUASI-FERMI LEVELS 317
12.2 NUMERICAL SOLUTION OF STATIONARY SITUATIONS 319
12.2.1 LINEARIZATION OF THE PROBLEM 320
12.2.2 THE FINITE DIFFERENCE METHOD 322
12.2.3 EXAMPLE OF A STATIONARY PROBLEM 327
12.3 SIMULATION OF TIME-DEPENDENT SITUATIONS 330
PART III: REFERENCE MATERIAL 333
APPENDIX A: FREQUENTLY USED SYMBOLS 335
APPENDIX B: PHYSICAL CONSTANTS 339
REFERENCES 341
BOOKS AND REVIEWS 341
ARTICLES 342
INDEX ' 349 |
| adam_txt |
GERHARD LUTZ
SEMICONDUCTOR
RADIATION DETECTORS
DEVICE PHYSICS
WITH 167 FIGURES AND 11 TABLES
4Y SPRINGER
CONTENTS
1. INTRODUCTION
PART I: SEMICONDUCTOR PHYSICS
2. SEMICONDUCTORS 7
2.1 CRYSTAL STRUCTURE 7
2.2 ENERGY BANDS 8
2.3 INTRINSIC SEMICONDUCTORS 11
2.4 EXTRINSIC SEMICONDUCTORS 14
2.5 CARRIER TRANSPORT IN SEMICONDUCTORS 16
2.5.1 DRIFT 17
2.5.2 DIFFUSION 17
2.5.3 MAGNETIC FIELD EFFECTS 19
2.6 CARRIER GENERATION AND RECOMBINATION IN SEMICONDUCTORS . 21
2.6.1 THERMAL GENERATION OF CHARGE CARRIERS 21
2.6.2 GENERATION OF CHARGE CARRIERS
BY ELECTROMAGNETIC RADIATION 22
2.6.3 GENERATION BY CHARGED PARTICLES 23
2.6.4 SHAPE OF A RADIATION-GENERATED CHARGE CLOUD 25
2.6.5 MULTIPLICATION PROCESSES 26
2.6.6 RECOMBINATION 28
2.6.7 CHARGE-CARRIER LIFETIME 29
2.6.8 CARRIER LIFETIME IN INDIRECT SEMICONDUCTORS 31
2.7 SIMULTANEOUS TREATMENT OF CARRIER GENERATION AND TRANSPORT 34
2.8 SUMMARY AND DISCUSSION 37
3. BASIC SEMICONDUCTOR STRUCTURES ' 39
3.1 THE P-N DIODE JUNCTION 39
3.1.1 A P-N DIODE IN THERMAL EQUILIBRIUM 39
3.1.2 A P-N DIODE WITH APPLICATION OF AN EXTERNAL VOLTAGE . 43
3.1.3 A P-N DIODE UNDER IRRADIATION WITH LIGHT 46
3.1.4 CAPACITANCE*VOLTAGE CHARACTERISTICS 49
3.1.5 BREAKDOWN UNDER STRONG REVERSE BIAS 51
3.2 METAL-SEMICONDUCTOR CONTACT 56
VIII CONTENTS
3.2.1 CURRENT-VOLTAGE CHARACTERISTICS 58
3.2.2 OHMIC CONTACT 59
3.3 METAL-INSULATOR-SEMICONDUCTOR STRUCTURE 59
3.3.1 THERMAL EQUILIBRIUM CONDITION 61
3.3.2 THE SI-SIO
2
MOS STRUCTURE 68
3.3.3 CAPACITANCE-VOLTAGE CHARACTERISTICS 69
3.3.4 NONEQUILIBRIUM AND A RETURN TO EQUILIBRIUM 70
3.4 THE N+-N OR P+-P STRUCTURES 72
3.5 SUMMARY AND DISCUSSION 73
PART II: SEMICONDUCTOR DETECTORS 77
4. SEMICONDUCTORS AS DETECTORS 79
4.1 THE PROPERTIES OF INTRINSIC SEMICONDUCTOR MATERIALS 79
4.2 PROPERTIES OF EXTRINSIC SEMICONDUCTOR MATERIALS 83
4.2.1 DOPING OF SEMICONDUCTORS 84
4.2.2 BULK DEFECTS 86
4.2.3 EFFECTS ON MATERIAL PROPERTIES 88
4.3 INSULATORS AND METALS 88
4.3.1 INSULATOR PROPERTIES 89
4.3.2 SEMICONDUCTOR SURFACE DEFECTS 89
4.3.3 METAL PROPERTIES 90
4.4 CHOICE OF DETECTOR MATERIAL 91
4.4.1 INTERACTION OF RADIATION WITH SEMICONDUCTORS 91
4.4.2 CHARGE COLLECTION AND MEASUREMENT PRECISION 92
5. DETECTORS FOR ENERGY AND RADIATION-LEVEL MEASUREMENT 95
5.1 UNBIASED DIODE 95
5.2 REVERSE-BIASED DIODE 100
5.2.1 CHARGE COLLECTION AND MEASUREMENT 102
5.2.2 SURFACE BARRIER DETECTORS 105
5.2.3 P-N JUNCTION DETECTORS 106
5.3 SUMMARY 107
6. DETECTORS FOR POSITION AND ENERGY" MEASUREMENT 109
6.1 RESISTIVE CHARGE DIVISION 109
6.2 DIODE STRIP DETECTORS .-.' 110
6.2.1 READOUT METHODS 112
6.2.2 CHARGE COLLECTION AND MEASUREMENT ACCURACY 114
6.2.3 CHOICE OF GEOMETRICAL PARAMETERS 115
6.3 STRIP DETECTORS WITH DOABLE-SIDED READOUT 116
6.4 STRIP DETECTORS
WITH INTEGRATED CAPACITIVE READOUT COUPLING 120
6.5 DRIFT DETECTORS 125
CONTENTS IX
6.5.1 LINEAR DRIFT DEVICES 127
6.5.2 MATRIX DRIFT DEVICES 132
6.5.3 RADIAL DRIFT DEVICES 133
6.5.4 SINGLE-SIDED STRUCTURED DEVICES 134
6.5.5 READOUT OF DRIFT DEVICES AND MEASUREMENT PRECISION . 136
6.6 CHARGE COUPLED DEVICES AS DETECTORS 137
6.6.1 THREE-PHASE "CONVENTIONAL" MOS CCDS 138
6.6.2 LINEAR AND MATRIX CCDS 140
6.6.3 CHARGE COLLECTION AND CHARGE TRANSPORT 140
6.6.4 SIGNAL READOUT 143
6.6.5 OTHER TYPES OF MOS CCDS 144
6.6.6 FULLY DEPLETED P-N CCDS 144
6.7 SUMMARY 151
7. THE ELECTRONICS OF THE READOUT FUNCTION 153
7.1 OPERATING PRINCIPLES OF TRANSISTORS 153
7.1.1 BIPOLAR TRANSISTORS 153
7.1.2 JUNCTION FIELD EFFECT TRANSISTORS 160
7.1.3 METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS . 165
7.1.4 THRESHOLD BEHAVIOR OF UNIPOLAR TRANSISTORS 175
7.1.5 THE DIFFERENT TYPES OF JFETS AND MOSFETS 178
7.2 NOISE SOURCES 180
7.2.1 THERMAL NOISE 180
7.2.2 LOW-FREQUENCY VOLTAGE NOISE 181
7.2.3 SHOT NOISE 181
7.2.4 NOISE IN TRANSISTORS 182
7.3 THE MEASUREMENT OF CHARGE 190
7.3.1 THE CHARGE-SENSITIVE AMPLIFIER 190
7.3.2 NOISE IN A CHARGE-SENSITIVE AMPLIFIER 191
7.3.3 FILTERING AND SHAPING 192
7.4 BASIC ELECTRONIC CIRCUITS 195
7.4.1 CURRENT SOURCES AND MIRRORS 196
7.4.2 INVERTERS 197
7.4.3 SOURCE FOLLOWERS 200
7.4.4 CASCODE AMPLIFIERS 201
7.4.5 DIFFERENTIAL AMPLIFIERS .! 202
7.5 INTEGRATED CIRCUIT TECHNOLOGIES 202
7.5.1 NMOS TECHNOLOGIES .:.'. 203
7.5.2 CMOS TECHNOLOGIES 205
7.5.3 BIPOLAR TECHNOLOGIES 206
7.5.4 SOI TECHNOLOGIES .'. 206
7.5.5 MIXED TECHNOLOGIES . I 207
7.6 INTEGRATED CIRCUITS FOR STRIP DETECTORS 207
7.7 INTEGRATED CIRCUITS FOR PIXEL DETECTORS 210
7.8 NOISE IN STRIP DETECTORS - FRONT-END SYSTEMS 211
7.8.1 BIASING CIRCUITS 212
X CONTENTS
7.8.2 NOISE IN BIASING CIRCUITS 216
7.8.3 NOISE CORRELATIONS 222
7.9 SUMMARY 225
8. THE INTEGRATION OF DETECTORS AND THEIR ELECTRONICS 229
8.1 HYBRID SYSTEMS OF DETECTORS AND THEIR ELECTRONICS 229
8.1.1 STRIP DETECTORS 229
8.1.2 PIXEL DETECTORS 231
8.2 DETECTOR-TECHNOLOGY-COMPATIBLE ELECTRONICS 233
9. DETECTORS WITH INTRINSIC AMPLIFICATION 239
9.1 AVALANCHE DIODE 239
9.2 DEPLETED FIELD EFFECT TRANSISTOR STRUCTURE 243
9.2.1 DEPLETED P-CHANNEL
MOS FIELD EFFECT TRANSISTOR (DEPMOSFET) 244
9.2.2 ELECTRICAL PROPERTIES AND DEVICE SCHEMATICS 247
9.2.3 OTHER TYPES OF DEPFET STRUCTURES 251
9.2.4 DEPFET PROPERTIES AND APPLICATIONS 253
9.3 DEPFET PIXEL DETECTORS 254
9.3.1 DEPFET PIXEL DETECTOR WITH RANDOM ACCESS READOUT 254
9.3.2 DEPFET PIXEL DETECTOR FOR CONTINUOUS OPERATION . 255
9.3.3 HYBRID DEPFET PIXEL DETECTOR 257
9.3.4 DEPFET PIXEL DETECTOR
WITH THREE-DIMENSIONAL ANALOG MEMORY 258
10. DETECTOR TECHNOLOGY 259
10.1 PRODUCTION OF DETECTOR SUBSTRATES 259
10.2 PROCESSING SEQUENCE IN PLANAR TECHNOLOGY 260
10.2.1 PHOTOLITHOGRAPHIC STRUCTURING 261
10.2.2 CHEMICAL ETCHING 261
10.2.3 DOPING 262
10.2.4 OXIDATION 263
10.2.5 DEPOSITION FROM THE GAS PHASE 263
10.2.6 METAL DEPOSITION 264
10.2.7 THERMAL TREATMENTS 264
10.2.8 PASSIVATION 265
10.3 TECHNOLOGY SIMULATION 266
11. DEVICE STABILITY AND RADIATION HARDNESS 267
11.1 ELECTRICAL BREAKDOWN AND PROTECTION 267
11.1.1 BREAKDOWN PROTECTION IN DIODE STRIP DETECTORS 268
11.1.2 BREAKDOWN PROTECTION OF THE DETECTOR RIM 273
11.2 RADIATION DAMAGE IN SEMICONDUCTORS 275
11.2.1 THE FORMATION OF PRIMARY LATTICE DEFECTS 276
CONTENTS XI
11.2.2 FORMATION AND PROPERTIES OF STABLE DEFECTS 277
11.2.3 ELECTRICAL PROPERTIES OF DEFECT COMPLEXES 279
11.2.4 EFFECTS OF DEFECTS ON DETECTOR PROPERTIES 288
11.2.5 ANNEALING OF RADIATION DAMAGE 296
11.2.6 REVERSE ANNEALING 300
11.2.7 PARAMETERIZATION OF RADIATION DAMAGE
FOR LOW-FLUX IRRADIATION 301
11.3 RADIATION DAMAGE IN THE SURFACE REGION 301
11.3.1 OXIDE DAMAGE 302
11.3.2 NONUNIFORMITY IN BULK DAMAGE NEAR THE SURFACE 303
11.4 RADIATION DAMAGE IN DETECTORS 303
11.5 RADIATION DAMAGE IN ELECTRONICS 307
11.6 RADIATION HARDENING TECHNIQUES 309
11.7 SUMMARY 310
12. DEVICE SIMULATION 313
12.1 MATHEMATICAL FORMULATION 313
12.1.1 POISSON AND CONTINUITY EQUATIONS 314
12.1.2 DEEP-LEVEL DEFECTS IN STATIONARY SITUATIONS '. 315
12.1.3 QUASI-FERMI LEVELS 317
12.2 NUMERICAL SOLUTION OF STATIONARY SITUATIONS 319
12.2.1 LINEARIZATION OF THE PROBLEM 320
12.2.2 THE FINITE DIFFERENCE METHOD 322
12.2.3 EXAMPLE OF A STATIONARY PROBLEM 327
12.3 SIMULATION OF TIME-DEPENDENT SITUATIONS 330
PART III: REFERENCE MATERIAL 333
APPENDIX A: FREQUENTLY USED SYMBOLS 335
APPENDIX B: PHYSICAL CONSTANTS 339
REFERENCES 341
BOOKS AND REVIEWS 341
ARTICLES 342
INDEX ' 349 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Lutz, Gerhard 1939-2017 |
| author_GND | (DE-588)1154906388 |
| author_facet | Lutz, Gerhard 1939-2017 |
| author_role | aut |
| author_sort | Lutz, Gerhard 1939-2017 |
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| building | Verbundindex |
| bvnumber | BV023114629 |
| classification_rvk | UP 2800 ZN 3460 |
| ctrlnum | (OCoLC)613456652 (DE-599)DNB983484929 |
| dewey-full | 539.776 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 539 - Modern physics |
| dewey-raw | 539.776 |
| dewey-search | 539.776 |
| dewey-sort | 3539.776 |
| dewey-tens | 530 - Physics |
| discipline | Maschinenbau / Maschinenwesen Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Maschinenbau / Maschinenwesen Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 1. ed. |
| format | Book |
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| id | DE-604.BV023114629 |
| illustrated | Illustrated |
| index_date | 2024-07-02T19:49:35Z |
| indexdate | 2024-07-20T09:32:00Z |
| institution | BVB |
| isbn | 9783540716785 3540716785 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016317164 |
| oclc_num | 613456652 |
| open_access_boolean | |
| owner | DE-92 DE-573 DE-91G DE-BY-TUM DE-11 DE-29T DE-384 |
| owner_facet | DE-92 DE-573 DE-91G DE-BY-TUM DE-11 DE-29T DE-384 |
| physical | XI, 353 S. Ill., graph. Darst. |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | Springer |
| record_format | marc |
| spelling | Lutz, Gerhard 1939-2017 Verfasser (DE-588)1154906388 aut Semiconductor radiation detectors device physics ; with 11 tables Gerhard Lutz 1. ed. Berlin [u.a.] Springer 2007 XI, 353 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturverz. S. [341] - 347 Halbleiterdetektor (DE-588)4158795-9 gnd rswk-swf Halbleiterdetektor (DE-588)4158795-9 s DE-604 text/html http://deposit.dnb.de/cgi-bin/dokserv?id=2930591&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016317164&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Lutz, Gerhard 1939-2017 Semiconductor radiation detectors device physics ; with 11 tables Halbleiterdetektor (DE-588)4158795-9 gnd |
| subject_GND | (DE-588)4158795-9 |
| title | Semiconductor radiation detectors device physics ; with 11 tables |
| title_auth | Semiconductor radiation detectors device physics ; with 11 tables |
| title_exact_search | Semiconductor radiation detectors device physics ; with 11 tables |
| title_exact_search_txtP | Semiconductor radiation detectors device physics ; with 11 tables |
| title_full | Semiconductor radiation detectors device physics ; with 11 tables Gerhard Lutz |
| title_fullStr | Semiconductor radiation detectors device physics ; with 11 tables Gerhard Lutz |
| title_full_unstemmed | Semiconductor radiation detectors device physics ; with 11 tables Gerhard Lutz |
| title_short | Semiconductor radiation detectors |
| title_sort | semiconductor radiation detectors device physics with 11 tables |
| title_sub | device physics ; with 11 tables |
| topic | Halbleiterdetektor (DE-588)4158795-9 gnd |
| topic_facet | Halbleiterdetektor |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=2930591&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016317164&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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