Crystal growth technology: from fundamentals and simulation to large-scale production
Saved in:
| Format: | Book |
|---|---|
| Language: | English |
| Published: |
Weinheim
WILEY-VCH
2008
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis Inhaltstext Inhaltsverzeichnis |
| Physical Description: | XVI, 505 S. Ill., graph. Darst. |
| ISBN: | 9783527317622 3527317627 |
Staff View
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV023097911 | ||
| 003 | DE-604 | ||
| 005 | 20080715 | ||
| 007 | t | ||
| 008 | 080124s2008 gw ad|| |||| 00||| eng d | ||
| 015 | |a 07,N28,1242 |2 dnb | ||
| 016 | 7 | |a 984585486 |2 DE-101 | |
| 020 | |a 9783527317622 |c Gb. : ca. EUR 159.00 (freier Pr.), ca. sfr 251.00 (freier Pr.) |9 978-3-527-31762-2 | ||
| 020 | |a 3527317627 |c Gb. : ca. EUR 159.00 (freier Pr.), ca. sfr 251.00 (freier Pr.) |9 3-527-31762-7 | ||
| 024 | 3 | |a 9783527317622 | |
| 028 | 5 | 2 | |a 1131762 000 |
| 035 | |a (OCoLC)191890268 | ||
| 035 | |a (DE-599)DNB984585486 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-BW | ||
| 049 | |a DE-29T |a DE-703 |a DE-M49 |a DE-355 |a DE-92 |a DE-634 | ||
| 050 | 0 | |a QD921 | |
| 082 | 0 | |a 660.284298 |2 22 | |
| 084 | |a UQ 2000 |0 (DE-625)146482: |2 rvk | ||
| 084 | |a VE 9350 |0 (DE-625)147153:253 |2 rvk | ||
| 084 | |a 540 |2 sdnb | ||
| 084 | |a PHY 802f |2 stub | ||
| 084 | |a CHE 617f |2 stub | ||
| 084 | |a CHE 312f |2 stub | ||
| 245 | 1 | 0 | |a Crystal growth technology |b from fundamentals and simulation to large-scale production |c Hans J. Scheel and Peter Capper |
| 264 | 1 | |a Weinheim |b WILEY-VCH |c 2008 | |
| 300 | |a XVI, 505 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a Crystal growth |v Congresses | |
| 650 | 4 | |a Crystal growth |x Industrial applications |v Congresses | |
| 650 | 4 | |a Crystal growth |x Technological innovations |v Congresses | |
| 650 | 0 | 7 | |a Kristallwachstum |0 (DE-588)4123579-4 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4143413-4 |a Aufsatzsammlung |2 gnd-content | |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Kristallwachstum |0 (DE-588)4123579-4 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Scheel, Hans J. |e Sonstige |4 oth | |
| 700 | 1 | |a Capper, Peter |e Sonstige |4 oth | |
| 856 | 4 | |u http://d-nb.info/984585486/04 |3 Inhaltsverzeichnis | |
| 856 | 4 | 2 | |q text/html |u http://deposit.dnb.de/cgi-bin/dokserv?id=2973521&prov=M&dok_var=1&dok_ext=htm |3 Inhaltstext |
| 856 | 4 | 2 | |m Digitalisierung UB Regensburg |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016300685&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-016300685 | |
Record in the Search Index
| _version_ | 1805089889853636608 |
|---|---|
| adam_text |
Contents
Preface
Xi
List of Contributors
XIII
Part I General Aspects of Crystal Growth Technology
1
1
Phase Diagrams for Crystal Growth
3
Manfred
Mühlberg
1.1
Introduction
3
1.2
Thermodynamics and Phase Diagrams
4
1.3
Phase Diagrams vs. Crystal Growth from Liquid Phases
13
1.4
Conclusions
23
References
25
2
Fundamentals of Equilibrium Thermodynamics
of Crystal Growth
27
Klausjacobs
2.1
Introduction
27
2.2
Recapitulation of Some Basic Concepts
30
2.3
Relationships Between Thermodynamics and Kinetics
36
2.4
Thermodynamics of Melt Growth
38
2.5
Thermodynamics of Solution Growth
43
2.6
Thermodynamics of Crystal Growth from the Vapor
54
2.7
Solid-Solid Equilibria
65
2.8
Thermodynamics of Nucleation and Interfaces
67
2.9
Summary
71
References
71
3
Thermodynamics, Origin, and Control of Defects
73
Peter Rudolph
3.1
Introduction
73
3.2
Native Point Defects
74
VI
Contents
3.3
Dislocations
81
3.4
Dislocation Cells and Grain Boundaries
85
3.5
Second-Phase Particles
92
3.6
Summary and Outlook
95
References
96
4
Thermophysical Properties of Molten Silicon
103
Taketoshi Hibiya, Hiroyuki Fukuyama, Takao Tsukada
and Masahito Watanabe
4.1
Introduction
103
4.2
Density and Volumetric Thermal Expansion Coefficient
106
4.3
Isobaric Molar Heat Capacity
110
4.4
Emissivity
113
4.5
Thermal Conductivity
117
4.6
Surface Tension
117
4.7
Diffusion Constant
121
4.8
Viscosity
123
4.9
Electrical Conductivity
125
4.10
Sensitivity Analysis
127
4.11
Recommended Thermophysical Property Data for Silicon
System
127
4.12
Summary
129
References
131
Partii
Simulation of Industrial Growth Processes
137
5
Yield Improvement and Defect Control in Bridgman-Type Crystal
Growth with the Aid of Thermal Modeling
139
Jochen Friedrich
5.1
Introduction
139
5.2
Principles of Thermal Modeling
141
5.3
Verification of Numerical Models
154
5.4
Yield Enhancement by Defect Control
158
5.5
Conclusions
169
References
170
6
Modeling of Czochralski Growth of Large Silicon Crystals
173
Vladimir Kaiaev, Yuri Makarov and Alexander Zhmakin
6.1
Introduction
173
6.2
Numerical Model
174
6.3
Model Validation
181
6.4
Conclusions
292
References
292
Contents
VII
7 Global
Analysis
of Effects of Magnetic Field Configuration
on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si
Crystal Growth
195
Koichi
Kakimoto
and Lljun Liu
7.1
Introduction
195
7.2
Model Description and Governing Equations Under a
Transverse Magnetic Field
196
7.3
Computation Results for Model Validation
197
7.4
Numerical Analysis of a TMCZ Growth
199
7.5
Conclusions
202
References
203
8
Modeling of
Semitransparent
Bulk Crystal Growth
205
Vladimir Kaiaev, Yuri Makarov, Valentin Yuferev and
Alexander Zhmakin
8.1
Introduction
205
8.2
Numerical Model
208
8.3
An Example: Growth of Bismuth Germanate Crystals
213
8.4
Conclusions
226
References
227
Part III Compound Semiconductors
229
9
Recent Progress in
G a
As Growth Technologies
at FREIBERGER
231
Stefan Eichler, Frank
Borner,
Thomas
Bünger,
ManfredJurisch,
Andreas
Köhler,
Ullrich Kretzer, Max Scheffer-Czygan,
Berndt
Weinert
and
Tilo Flade
9.1
Introduction
231
9.2
Properties of GaAs
232
9.3
Growth of Large-Diameter GaAs Single Crystals
235
9.4
LEC
versus VB/VGF GaAs Wafers
246
9.5
Doping
251
9.6
Summary
263
References
263
10
Interface Stability and Its Impact on Control Dynamics
267
Frank].
Bruni
10.1
Introduction
267
10.2
Diameter Control
268
10.3
Interface Transitions
271
10.4
Factors Influencing the Shape of the Solid/Liquid Interface
276
10.5
Conclusions and Discussion
280
References
281
VIII Contents
11
Use of Forced Mixing via the Accelerated Crucible Rotation
Technique (ACRT) in Bridgman Growth of Cadmium Mercury
Telluride (CMT) 283
Peter Capper
11.1
Introduction
283
11.2
Elemental Purification (Mercury and Tellurium)
284
11.3
Bridgman Growth of CMT
285
11.4
Accelerated Crucible Rotation Technique (ACRT)
289
11.5
Uses in
IR
Devices
301
11.6
Summary
304
References
306
12
Crystal-Growth Technology for Ternary Ill-V Semiconductor
Production by Vertical Bridgman and Vertical Gradient Freezing
Methods with Accelerated Crucible Rotation Technique
307
Partha S. Dutta
12.1
Introduction
307
12.2
Fundamental Crystal Growth Challenges for Ternary
Compounds
308
12.3
Key Requirements for Ternary Substrates and Crystal-Growth
Process
312
12.4
Optimization of Growth Parameters for Radially Homogeneous
Crystals
314
12.5
Controlled Solute-Feeding Process for Axially Homogeneous
Crystals
319
12.6
Steps in Ternary Crystal Production
327
12.7
Current Status of Ternary Substrates
332
12.8
Conclusion
332
References
333
13
Х
-Ray Diffraction Imaging of Industrial Crystals
337
Keith Bowen, David Jacques,
Petra Feichtinger
and Matthew Wormington
13.1
Introduction
337
13.2
Digital
Х
-Ray Diffraction Imaging
338
13.3
Applications Examples
341
13.4
Summary
349
References
349
Part IV Scintillator Crystals
351
14
Continuous Growth of Large Halide Scintillation Crystals
353
Alexander Ge/ctin, Valentine Goriletskiy and Borys Zaslavskiy
14.1
Introduction
353
14.2
Physical Principles Underlying Continuous
Single-Crystal Growth
355
Contents
IX
14.3 Technological
Platform
for
Family
of Continuous
Crystal Growth Hardware
360
14.4
State-of-the-Art Crystal Performance for Continuous-Growth
Techniques
367
14.5
Crystal Press Forging for Large Scintillator Development
376
References
378
Part V Oxides
379
15
Phase Equilibria and Growth of Langasite-Type Crystals
381
Satoshi
Uda,
Shou-Qi Wang, Hiromitsu Kimura andXinm'ing Huang
15.1
Introduction
-
What is Langasite?
381
15.2
Structure of Langasite-Type Crystals
382
15.3
Study of Equilibrium Phase Diagram Around Langasite
384
15.4
Study of Equilibrium Phase Diagram Around Langatate
391
15.5
Conversion of Melting State of Langasite from
Incongruent
to Congruent
395
15.6
Direct Growth of Langasite from the Melt
398
15.7
Optimal Composition for the Growth of Langasite via the
Czochralski Method
401
15.8
Growth Technology of Four-Inch Langasite Along
[Olli] 403
15.9
Growth of Langasite by the Bridgman Technique
406
References
413
16
Flame-Fusion (Verneuil) Growth of Oxides
425
Hans}.
Scheel
and Leonid Lytvynov
16.1
Introduction
425
16.2
Historical Background
426
16.3
Impact of Verneuil's Principles
429
16.4
Apparatus
420
16.5
Powder Preparation and Feeding Control
423
16.6
Thermal Conditions
427
16.7
Growth of Compounds with Volatile Constituents
432
16.8
Conclusions
432
References
433
Part VI Crystal Growth for Sustaining Energy
435
17
Saving Energy and Renewable Energy Through Crystal
Technology
437
HansJ.
Scheel
17.1
Introduction
437
17.2
Storage, Transport and Saving of Energy
440
17.3
World Energy Consumption and Conventional Energy
Sources
441
X
Contents
17.4
Future Energy
Sources
444
17.5
Costs and Risks of Conventional and of Future Energy
Sources
447
17.6
Crystal Technology and its Role for Energy
449
17.7
Future Technologies for Mankind
451
References
452
Part
VII
Crystal Machining
455
18
Crystal Sawing Technology
457
HansJ.
Möller
18.1
Introduction
457
18.2
Multiwire Wafering Technique
457
18.3
Basic Sawing Mechanism
459
18.4
Experimental Results
470
18.5
Summary
472
References
474
19
Plasma Chemical Vaporization Machining and Elastic Emission
Machining
475
Yasuhisa
Sano,
Kazuya Yamamura, Hidekazu Mimura, Kazuto
Yamauchi and Yuzo
Mon
19.1
Introduction
475
19.2
Plasma Chemical Vaporization Machining (PCVM)
475
19.3
Elastic Emission Machining
482
19.4
Catalyst-Referred Etching
488
References
493
Index
497 |
| adam_txt |
Contents
Preface
Xi
List of Contributors
XIII
Part I General Aspects of Crystal Growth Technology
1
1
Phase Diagrams for Crystal Growth
3
Manfred
Mühlberg
1.1
Introduction
3
1.2
Thermodynamics and Phase Diagrams
4
1.3
Phase Diagrams vs. Crystal Growth from Liquid Phases
13
1.4
Conclusions
23
References
25
2
Fundamentals of Equilibrium Thermodynamics
of Crystal Growth
27
Klausjacobs
2.1
Introduction
27
2.2
Recapitulation of Some Basic Concepts
30
2.3
Relationships Between Thermodynamics and Kinetics
36
2.4
Thermodynamics of Melt Growth
38
2.5
Thermodynamics of Solution Growth
43
2.6
Thermodynamics of Crystal Growth from the Vapor
54
2.7
Solid-Solid Equilibria
65
2.8
Thermodynamics of Nucleation and Interfaces
67
2.9
Summary
71
References
71
3
Thermodynamics, Origin, and Control of Defects
73
Peter Rudolph
3.1
Introduction
73
3.2
Native Point Defects
74
VI
Contents
3.3
Dislocations
81
3.4
Dislocation Cells and Grain Boundaries
85
3.5
Second-Phase Particles
92
3.6
Summary and Outlook
95
References
96
4
Thermophysical Properties of Molten Silicon
103
Taketoshi Hibiya, Hiroyuki Fukuyama, Takao Tsukada
and Masahito Watanabe
4.1
Introduction
103
4.2
Density and Volumetric Thermal Expansion Coefficient
106
4.3
Isobaric Molar Heat Capacity
110
4.4
Emissivity
113
4.5
Thermal Conductivity
117
4.6
Surface Tension
117
4.7
Diffusion Constant
121
4.8
Viscosity
123
4.9
Electrical Conductivity
125
4.10
Sensitivity Analysis
127
4.11
Recommended Thermophysical Property Data for Silicon
System
127
4.12
Summary
129
References
131
Partii
Simulation of Industrial Growth Processes
137
5
Yield Improvement and Defect Control in Bridgman-Type Crystal
Growth with the Aid of Thermal Modeling
139
Jochen Friedrich
5.1
Introduction
139
5.2
Principles of Thermal Modeling
141
5.3
Verification of Numerical Models
154
5.4
Yield Enhancement by Defect Control
158
5.5
Conclusions
169
References
170
6
Modeling of Czochralski Growth of Large Silicon Crystals
173
Vladimir Kaiaev, Yuri Makarov and Alexander Zhmakin
6.1
Introduction
173
6.2
Numerical Model
174
6.3
Model Validation
181
6.4
Conclusions
292
References
292
Contents
VII
7 Global
Analysis
of Effects of Magnetic Field Configuration
on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si
Crystal Growth
195
Koichi
Kakimoto
and Lljun Liu
7.1
Introduction
195
7.2
Model Description and Governing Equations Under a
Transverse Magnetic Field
196
7.3
Computation Results for Model Validation
197
7.4
Numerical Analysis of a TMCZ Growth
199
7.5
Conclusions
202
References
203
8
Modeling of
Semitransparent
Bulk Crystal Growth
205
Vladimir Kaiaev, Yuri Makarov, Valentin Yuferev and
Alexander Zhmakin
8.1
Introduction
205
8.2
Numerical Model
208
8.3
An Example: Growth of Bismuth Germanate Crystals
213
8.4
Conclusions
226
References
227
Part III Compound Semiconductors
229
9
Recent Progress in
G a
As Growth Technologies
at FREIBERGER
231
Stefan Eichler, Frank
Borner,
Thomas
Bünger,
ManfredJurisch,
Andreas
Köhler,
Ullrich Kretzer, Max Scheffer-Czygan,
Berndt
Weinert
and
Tilo Flade
9.1
Introduction
231
9.2
Properties of GaAs
232
9.3
Growth of Large-Diameter GaAs Single Crystals
235
9.4
LEC
versus VB/VGF GaAs Wafers
246
9.5
Doping
251
9.6
Summary
263
References
263
10
Interface Stability and Its Impact on Control Dynamics
267
Frank].
Bruni
10.1
Introduction
267
10.2
Diameter Control
268
10.3
Interface Transitions
271
10.4
Factors Influencing the Shape of the Solid/Liquid Interface
276
10.5
Conclusions and Discussion
280
References
281
VIII Contents
11
Use of Forced Mixing via the Accelerated Crucible Rotation
Technique (ACRT) in Bridgman Growth of Cadmium Mercury
Telluride (CMT) 283
Peter Capper
11.1
Introduction
283
11.2
Elemental Purification (Mercury and Tellurium)
284
11.3
Bridgman Growth of CMT
285
11.4
Accelerated Crucible Rotation Technique (ACRT)
289
11.5
Uses in
IR
Devices
301
11.6
Summary
304
References
306
12
Crystal-Growth Technology for Ternary Ill-V Semiconductor
Production by Vertical Bridgman and Vertical Gradient Freezing
Methods with Accelerated Crucible Rotation Technique
307
Partha S. Dutta
12.1
Introduction
307
12.2
Fundamental Crystal Growth Challenges for Ternary
Compounds
308
12.3
Key Requirements for Ternary Substrates and Crystal-Growth
Process
312
12.4
Optimization of Growth Parameters for Radially Homogeneous
Crystals
314
12.5
Controlled Solute-Feeding Process for Axially Homogeneous
Crystals
319
12.6
Steps in Ternary Crystal Production
327
12.7
Current Status of Ternary Substrates
332
12.8
Conclusion
332
References
333
13
Х
-Ray Diffraction Imaging of Industrial Crystals
337
Keith Bowen, David Jacques,
Petra Feichtinger
and Matthew Wormington
13.1
Introduction
337
13.2
Digital
Х
-Ray Diffraction Imaging
338
13.3
Applications Examples
341
13.4
Summary
349
References
349
Part IV Scintillator Crystals
351
14
Continuous Growth of Large Halide Scintillation Crystals
353
Alexander Ge/ctin, Valentine Goriletskiy and Borys Zaslavskiy
14.1
Introduction
353
14.2
Physical Principles Underlying Continuous
Single-Crystal Growth
355
Contents
IX
14.3 Technological
Platform
for
Family
of Continuous
Crystal Growth Hardware
360
14.4
State-of-the-Art Crystal Performance for Continuous-Growth
Techniques
367
14.5
Crystal Press Forging for Large Scintillator Development
376
References
378
Part V Oxides
379
15
Phase Equilibria and Growth of Langasite-Type Crystals
381
Satoshi
Uda,
Shou-Qi Wang, Hiromitsu Kimura andXinm'ing Huang
15.1
Introduction
-
What is Langasite?
381
15.2
Structure of Langasite-Type Crystals
382
15.3
Study of Equilibrium Phase Diagram Around Langasite
384
15.4
Study of Equilibrium Phase Diagram Around Langatate
391
15.5
Conversion of Melting State of Langasite from
Incongruent
to Congruent
395
15.6
Direct Growth of Langasite from the Melt
398
15.7
Optimal Composition for the Growth of Langasite via the
Czochralski Method
401
15.8
Growth Technology of Four-Inch Langasite Along
[Olli] 403
15.9
Growth of Langasite by the Bridgman Technique
406
References
413
16
Flame-Fusion (Verneuil) Growth of Oxides
425
Hans}.
Scheel
and Leonid Lytvynov
16.1
Introduction
425
16.2
Historical Background
426
16.3
Impact of Verneuil's Principles
429
16.4
Apparatus
420
16.5
Powder Preparation and Feeding Control
423
16.6
Thermal Conditions
427
16.7
Growth of Compounds with Volatile Constituents
432
16.8
Conclusions
432
References
433
Part VI Crystal Growth for Sustaining Energy
435
17
Saving Energy and Renewable Energy Through Crystal
Technology
437
HansJ.
Scheel
17.1
Introduction
437
17.2
Storage, Transport and Saving of Energy
440
17.3
World Energy Consumption and Conventional Energy
Sources
441
X
Contents
17.4
Future Energy
Sources
444
17.5
Costs and Risks of Conventional and of Future Energy
Sources
447
17.6
Crystal Technology and its Role for Energy
449
17.7
Future Technologies for Mankind
451
References
452
Part
VII
Crystal Machining
455
18
Crystal Sawing Technology
457
HansJ.
Möller
18.1
Introduction
457
18.2
Multiwire Wafering Technique
457
18.3
Basic Sawing Mechanism
459
18.4
Experimental Results
470
18.5
Summary
472
References
474
19
Plasma Chemical Vaporization Machining and Elastic Emission
Machining
475
Yasuhisa
Sano,
Kazuya Yamamura, Hidekazu Mimura, Kazuto
Yamauchi and Yuzo
Mon
19.1
Introduction
475
19.2
Plasma Chemical Vaporization Machining (PCVM)
475
19.3
Elastic Emission Machining
482
19.4
Catalyst-Referred Etching
488
References
493
Index
497 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| building | Verbundindex |
| bvnumber | BV023097911 |
| callnumber-first | Q - Science |
| callnumber-label | QD921 |
| callnumber-raw | QD921 |
| callnumber-search | QD921 |
| callnumber-sort | QD 3921 |
| callnumber-subject | QD - Chemistry |
| classification_rvk | UQ 2000 VE 9350 |
| classification_tum | PHY 802f CHE 617f CHE 312f |
| ctrlnum | (OCoLC)191890268 (DE-599)DNB984585486 |
| dewey-full | 660.284298 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 660 - Chemical engineering |
| dewey-raw | 660.284298 |
| dewey-search | 660.284298 |
| dewey-sort | 3660.284298 |
| dewey-tens | 660 - Chemical engineering |
| discipline | Chemie / Pharmazie Physik Chemie |
| discipline_str_mv | Chemie / Pharmazie Physik Chemie |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 c 4500</leader><controlfield tag="001">BV023097911</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20080715</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">080124s2008 gw ad|| |||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">07,N28,1242</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">984585486</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783527317622</subfield><subfield code="c">Gb. : ca. EUR 159.00 (freier Pr.), ca. sfr 251.00 (freier Pr.)</subfield><subfield code="9">978-3-527-31762-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3527317627</subfield><subfield code="c">Gb. : ca. EUR 159.00 (freier Pr.), ca. sfr 251.00 (freier Pr.)</subfield><subfield code="9">3-527-31762-7</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783527317622</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">1131762 000</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)191890268</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB984585486</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BW</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-M49</subfield><subfield code="a">DE-355</subfield><subfield code="a">DE-92</subfield><subfield code="a">DE-634</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD921</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">660.284298</subfield><subfield code="2">22</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 2000</subfield><subfield code="0">(DE-625)146482:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">VE 9350</subfield><subfield code="0">(DE-625)147153:253</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">540</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 802f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">CHE 617f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">CHE 312f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Crystal growth technology</subfield><subfield code="b">from fundamentals and simulation to large-scale production</subfield><subfield code="c">Hans J. Scheel and Peter Capper</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Weinheim</subfield><subfield code="b">WILEY-VCH</subfield><subfield code="c">2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XVI, 505 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystal growth</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystal growth</subfield><subfield code="x">Industrial applications</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystal growth</subfield><subfield code="x">Technological innovations</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4143413-4</subfield><subfield code="a">Aufsatzsammlung</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Scheel, Hans J.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Capper, Peter</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2=" "><subfield code="u">http://d-nb.info/984585486/04</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="q">text/html</subfield><subfield code="u">http://deposit.dnb.de/cgi-bin/dokserv?id=2973521&prov=M&dok_var=1&dok_ext=htm</subfield><subfield code="3">Inhaltstext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung UB Regensburg</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016300685&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-016300685</subfield></datafield></record></collection> |
| genre | (DE-588)4143413-4 Aufsatzsammlung gnd-content (DE-588)1071861417 Konferenzschrift gnd-content |
| genre_facet | Aufsatzsammlung Konferenzschrift |
| id | DE-604.BV023097911 |
| illustrated | Illustrated |
| index_date | 2024-07-02T19:43:41Z |
| indexdate | 2024-07-20T09:31:05Z |
| institution | BVB |
| isbn | 9783527317622 3527317627 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016300685 |
| oclc_num | 191890268 |
| open_access_boolean | |
| owner | DE-29T DE-703 DE-M49 DE-BY-TUM DE-355 DE-BY-UBR DE-92 DE-634 |
| owner_facet | DE-29T DE-703 DE-M49 DE-BY-TUM DE-355 DE-BY-UBR DE-92 DE-634 |
| physical | XVI, 505 S. Ill., graph. Darst. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | WILEY-VCH |
| record_format | marc |
| spelling | Crystal growth technology from fundamentals and simulation to large-scale production Hans J. Scheel and Peter Capper Weinheim WILEY-VCH 2008 XVI, 505 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Crystal growth Congresses Crystal growth Industrial applications Congresses Crystal growth Technological innovations Congresses Kristallwachstum (DE-588)4123579-4 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content (DE-588)1071861417 Konferenzschrift gnd-content Kristallwachstum (DE-588)4123579-4 s DE-604 Scheel, Hans J. Sonstige oth Capper, Peter Sonstige oth http://d-nb.info/984585486/04 Inhaltsverzeichnis text/html http://deposit.dnb.de/cgi-bin/dokserv?id=2973521&prov=M&dok_var=1&dok_ext=htm Inhaltstext Digitalisierung UB Regensburg application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016300685&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Crystal growth technology from fundamentals and simulation to large-scale production Crystal growth Congresses Crystal growth Industrial applications Congresses Crystal growth Technological innovations Congresses Kristallwachstum (DE-588)4123579-4 gnd |
| subject_GND | (DE-588)4123579-4 (DE-588)4143413-4 (DE-588)1071861417 |
| title | Crystal growth technology from fundamentals and simulation to large-scale production |
| title_auth | Crystal growth technology from fundamentals and simulation to large-scale production |
| title_exact_search | Crystal growth technology from fundamentals and simulation to large-scale production |
| title_exact_search_txtP | Crystal growth technology from fundamentals and simulation to large-scale production |
| title_full | Crystal growth technology from fundamentals and simulation to large-scale production Hans J. Scheel and Peter Capper |
| title_fullStr | Crystal growth technology from fundamentals and simulation to large-scale production Hans J. Scheel and Peter Capper |
| title_full_unstemmed | Crystal growth technology from fundamentals and simulation to large-scale production Hans J. Scheel and Peter Capper |
| title_short | Crystal growth technology |
| title_sort | crystal growth technology from fundamentals and simulation to large scale production |
| title_sub | from fundamentals and simulation to large-scale production |
| topic | Crystal growth Congresses Crystal growth Industrial applications Congresses Crystal growth Technological innovations Congresses Kristallwachstum (DE-588)4123579-4 gnd |
| topic_facet | Crystal growth Congresses Crystal growth Industrial applications Congresses Crystal growth Technological innovations Congresses Kristallwachstum Aufsatzsammlung Konferenzschrift |
| url | http://d-nb.info/984585486/04 http://deposit.dnb.de/cgi-bin/dokserv?id=2973521&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016300685&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT scheelhansj crystalgrowthtechnologyfromfundamentalsandsimulationtolargescaleproduction AT capperpeter crystalgrowthtechnologyfromfundamentalsandsimulationtolargescaleproduction |
There is no print copy available.
Description