Physics and properties of narrow gap semiconductors:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York
Springer
2008
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| Schriftenreihe: | Microdevices
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| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XII, 605 S. Ill., graph. Darst. |
| ISBN: | 9780387747439 9780387748016 0387747435 |
Internformat
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| 245 | 1 | 0 | |a Physics and properties of narrow gap semiconductors |c Junhao Chu ; Arden Sher |
| 264 | 1 | |a New York |b Springer |c 2008 | |
| 300 | |a XII, 605 S. |b Ill., graph. Darst. | ||
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Datensatz im Suchindex
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JUNHAO CHU ARDEN SHER PHYSICS AND PROPERTIES OF NARROW GAP
SEMICONDUCTORS OESPRI RINGER CONTENTS 1 INTRODUCTION 1 1.1 NARROW GAP
SEMICONDUCTORS 1 1.2 PHYSICS OF INFRARED PHOTO-ELECTRONICS 9 1.2.1
INFRARED PHOTO-ELECTRONICS 9 1.2.2 THERMAL INFRARED DETECTOR MATERIALS:
UNCOOLED DETECTORS 10 1.2.3 LIGHT EMITTING DEVICES 11 1.2.4 PROCESS OF
INFRARED PHYSICS 11 1.2.5 INFRARED MATERIALS RESEARCH, DEVICE, AND
APPLICATIONS STATUS. 13 REFERENCES 15 2CRYSTALS 19 2.1 THEORY OF
CRYSTAL GROWTH 19 2.1.1 INTRODUCTION 19 2.1.2 THE THERMODYNAMICS OF
CRYSTAL GROWTH 23 2.1.3 THE DYNAMICS OF CRYSTAL GROWTH 28 2.1.4
APPLICATIONS OF PHASE DIAGRAMS IN CRYSTAL GROWTH 32 2.1.5 SEGREGATION
COEFFICIENT 42 2.1.6 FREEZING PROCESS 48 2.2 BULK CRYSTAL GROWTH METHODS
53 2.2.1 PULLING TECHNIQUE 54 2.2.2 BRIDGMAN METHOD 62 2.2.3 THE
HALF-MELT AND THE TE SOLVENT METHODS 68 2.2.4 SOLID STATE
RE-CRYSTALLIZATION APPLIED TO HGCDTE 72 2.3 LIQUID PHASE EPITAXY 76
2.3.1 LPE GROWTH 77 2.3.2 LPE PROCESS 83 2.3.3 COMPARISON OF DIFFERENT
LPE TECHNIQUES 90 2.3.4 QUALITY CONTROL OF HGCDTE LPE FILMS 93 2.4
MOLECULAR BEAM EPITAXY GROWTH OF THIN FILMS 95 2.4.1 OVERVIEW OF THE
MOLECULAR BEAM EPITAXY PROCESS 96 2.4.2 REFLECTION HIGH-ENERGY ELECTRON
DIFFRACTION (RHEED) 101 2.4.3 MONITORING THE GROWTH TEMPERATURE 103
2.4.4 COMPOSITION CONTROL 110 X CONTENTS 2.5 PERFECTION OF CRYSTALS 116
2.5.1 X-RAY DOUBLE-CRYSTAL DIFFRACTION 116 2.5.2 MORPHOLOGY 127 2.5.3
PRECIPITATED PHASE IN HGI_ X CD X TE EPITAXIAL FILMS 130 2.5.4 NATIVE
POINT DEFECTS 136 REFERENCES 144 3 BAND STRUCTURES 151 3.1 GENERAL
DESCRIPTION OF BAND STRUCTURES 151 3.1.1 BAND STRUCTURE THEORY METHODS
151 3.1.2 A BRIEF TREATMENT OF BAND STRUCTURES OF NARROW GAP
SEMICONDUCTORS 155 3.2 THE HP PERTURBATION METHOD AND SECULAR EQUATIONS
161 3.2.1 THE HP FORMALISM 161 3.2.2 COMPLETE SECULAR EQUATION 164 3.2.3
SELECTION RULES 170 3.3 CALCULATION OF BAND STRUCTURES 180 3.3.1
SOLUTION AT KO=0 180 3.3.2 FIRST ORDER PERTURBATION CORRECTION DUE TO
THE HP TERM 182 3.3.3 PERTURBATION WITH BOTH HP AND (VK XP)»CR INCLUDED
183 3.3.4 SECOND ORDER PERTURBATION BETWEEN 0 LA AND 0 JSS 188 3.3.5
CONTRIBUTION FROM THE LINEAR K TERM H KSO 191 3.4 PARAMETERS OF THE
ENERGY BANDS 195 3.4.1 THE ENERGY GAP 195 3.4.2 THE ELECTRON EFFECTIVE
MASS OF THE CONDUCTION BAND 212 3.4.3 THE MOMENTUM MATRIX ELEMENT AND
THE HEAVY-HOLE EFFECTIVE MASS M H H 220 REFERENCE 221 APPENDIX 3A:
CRYSTALLOGRAPHY AND THE BLOCH THEOREM 227 APPENDIX 3B: OVERVIEWOF THE HP
METHOD 234 4 OPTICAL PROPERTIES 239 4.1 OPTICAL CONSTANTS AND THE
DIELECTRIC FUNCTION 239 4.1.1 FUNDAMENTALS 239 4.1.2 KRAMERS-KRONIG (KK)
RELATION AND OPTICAL CONSTANTS 242 4.1.3 DISPERSION OF THE REFRACTIVE
INDEX 246 4.1.4 EFFECT OF ELECTRIC AND MAGNETIC FIELDS ON OPTICAL
CONSTANTS .252 4.2 THEORY AND EXPERIMENT OF INTERBAND OPTICAL
TRANSITIONS 256 4.2.1 THE THEORY OF DIRECT INTERBAND OPTICAL TRANSITIONS
256 4.2.2 EXPERIMENTAL INVESTIGATIONS OF INTERBAND OPTICAL TRANSITIONS.
266 4.2.3 INDIRECT INTERBAND TRANSITIONS 274 CONTENTS XI 4.3 INTRINSIC
ABSORPTION SPECTRA EXPRESSIONS 279 4.3.1 THE ABSORPTION EDGE 279 4.3.2
AN ANALYTIC EXPRESSION FOR THE INTRINSIC ABSORPTION BAND 285 4.3.3 OTHER
EXPRESSIONS FOR THE INTRINSIC ABSORPTION COEFFICIENT 291 4.4 DIRECT
MEASUREMENTS OF OPTICAL CONSTANTS 296 4.4.1 INTRODUCTION 296 4.4.2 THE
PRINCIPLES OF SPECTROSCOPIC ELLIPSOMETRY 298 4.4.3 OPERATIONAL
CONFIGURATION 302 4.4.4 INVESTIGATION OF THE OPTICAL CONSTANTS OF HG!. X
CD X TE BY INFRARED SPECTROSCOPIC ELLIPSOMETRY 305 4.4.5 IN SITU
MONITORING OF THE COMPOSITION DURING HGI_ X CD X TE GROWTH 309 4.5
OPTICAL EFFECTS INDUCED BY FREE CARRIERS 316 4.5.1 MOSS-BURSTEIN EFFECT
316 4.5.2 GENERAL THEORY OF FREE CARRIER ABSORPTION 328 4.5.3 FREE
CARRIER ABSORPTION OF HG!. X CD X TE EPITAXIAL FILMS 334 4.5.4
MAGNETO-OPTIC EFFECT OF FREE CARRIERS 347 4.6 OPTICAL CHARACTERIZATION
OF MATERIALS 356 4.6.1 USING INFRARED-ABSORPTION SPECTRA TO DETERMINE
THE ALLOY COMPOSITION OF HGI_ X CD X TE 357 4.6.2 TRANSVERSE
COMPOSITIONAL UNIFORMITY OF HGI. X CD X TE SAMPLES 361 4.6.3 THE
LONGITUDINAL COMPOSITIONAL DISTRIBUTION OF HGI.^CD^TE EPILAYERS 366
4.6.4 USING INFRARED TRANSMISSION SPECTRA TO DETERMINE . THE PARAMETERS
OF A HGCDTE/CDTE/GAAS MULTILAYER STRUCTURE GROWN BY MBE 373 REFERENCES
379 5 TRANSPORT PROPERTIES 385 5.1 CARRIER CONCENTRATION AND THE FERMI
LEVEL 385 5.1.1 CARRIER STATISTICAL LAWS 385 5.1.2 INTRINSIC CARRIER
CONCENTRATION N 38 7 5.1.3 THE CARRIER CONCENTRATION AND THE FERMI LEVEL
FOR COMPENSATED SEMICONDUCTORS 399 5.2 CONDUCTIVITY AND MOBILITY 410
5.2.1 THE BOLTZMANN EQUATION AND CONDUCTIVITY 410 5.2.2 EXPERIMENTAL
RESULTS OF THE ELECTRON MOBILITY OFHG,. X CD X TE 416 5.2.3 AN
APPROXIMATE ANALYTIC EXPRESSION FOR THE ELECTRON MOBILITY OF N-TYPE HGI.
X CD X TE 425 5.2.4 AN EXPRESSION FOR THE HOLE MOBILITY OF P-HGI_ X CD X
TE 428 XII CONTENTS 5.3 TRANSPORT PROPERTIES IN MAGNETIC FIELD 430 5.3.1
CONDUCTIVITY TENSOR 430 5.3.2 HALL EFFECT 436 5.3.3 MAGNETO-RESISTANCE
EFFECT 441 5.3.4 MAGNETO-TRANSPORT EXPERIMENTAL METHODS 445 5.4 MOBILITY
SPECTRUM IN A MULTI-CARRIER SYSTEM 448 5.4.1 THE CONDUCTIVITY TENSOR OF
A MULTI-CARRIER SYSTEM 448 5.4.2 MULTI-CARRIER FITTING PROCEDURE 452
5.4.3 MOBILITY SPECTRUM ANALYSIS 456 5.4.4 QUANTITATIVE MOBILITY
SPECTRUM ANALYSIS 459 5.5 QUANTUM EFFECTS 470 5.5.1 MAGNETO-RESISTANCE
OSCILLATION 470 5.5.2 THE LONGITUDINAL MAGNETO-RESISTANCE OSCILLATIONS
OFN-INSB 478 5.5.3 THE MAGNETO-RESISTANCE OSCILLATIONS IN N-HGI. X CD X
TE 487 5.6 HOT ELECTRON EFFECTS 492 5.6.1 HOTELECTRONS 492 5.6.2 HOT
ELECTRON EFFECTS IN HGCDTE 495 REFERENCES 502 6 LATTICE VIBRATIONS 507
6.1 PHONON SPECTRA 507 6.1.1 MONATOMIC LINEAR CHAIN 507 6.1.2 PHONON
DISPERSION MEASUREMENT TECHNIQUES 511 6.1.3 THEORETICAL CALCULATIONS OF
THE PHONON SPECTRA 514 6.2 REFLECTION SPECTRA 528 6.2.1 TWO-MODEMODELOF
LATTICE VIBRATIONS 528 6.2.2 MULTI-MODE MODEL OF LATTICE VIBRATION 531
6.2.3 PLASMON OSCILLATION-LO PHONON COUPLING EFFECT 537 6.2.4 HGCDTE
FAR-INFRARED OPTICAL CONSTANT 543 6.3 TRANSMISSION SPECTRA 546 6.3.1
FAR-INFRARED TRANSMISSION SPECTRA 546 6.3.2 THE TWO-PHONON PROCESS 549
6.3.3 LOW-FREQUENCY ABSORPTION BAND OF HGI. X CD X TE ALLOYS 553 6.3.4
CHARACTERISTIC ESTIMATION OF PHONON SPECTRA 557 6.4 PHONON RAMAN
SCATTERING 559 6.4.1 POLARIZABILITY 559 6.4.2 SCATTERING CROSS-SECTION
568 6.4.3 APPLICATION OF SELECTIONRULES 578 6.4.4 RAMAN SCATTERING IN
HGCDTE 588 REFERENCE 595 INDEX 599 |
| adam_txt |
JUNHAO CHU ARDEN SHER PHYSICS AND PROPERTIES OF NARROW GAP
SEMICONDUCTORS OESPRI RINGER CONTENTS 1 INTRODUCTION 1 1.1 NARROW GAP
SEMICONDUCTORS 1 1.2 PHYSICS OF INFRARED PHOTO-ELECTRONICS 9 1.2.1
INFRARED PHOTO-ELECTRONICS 9 1.2.2 THERMAL INFRARED DETECTOR MATERIALS:
UNCOOLED DETECTORS 10 1.2.3 LIGHT EMITTING DEVICES 11 1.2.4 PROCESS OF
INFRARED PHYSICS 11 1.2.5 INFRARED MATERIALS RESEARCH, DEVICE, AND
APPLICATIONS STATUS. 13 REFERENCES 15 2CRYSTALS 19 2.1 THEORY OF
CRYSTAL GROWTH 19 2.1.1 INTRODUCTION 19 2.1.2 THE THERMODYNAMICS OF
CRYSTAL GROWTH 23 2.1.3 THE DYNAMICS OF CRYSTAL GROWTH 28 2.1.4
APPLICATIONS OF PHASE DIAGRAMS IN CRYSTAL GROWTH 32 2.1.5 SEGREGATION
COEFFICIENT 42 2.1.6 FREEZING PROCESS 48 2.2 BULK CRYSTAL GROWTH METHODS
53 2.2.1 PULLING TECHNIQUE 54 2.2.2 BRIDGMAN METHOD 62 2.2.3 THE
HALF-MELT AND THE TE SOLVENT METHODS 68 2.2.4 SOLID STATE
RE-CRYSTALLIZATION APPLIED TO HGCDTE 72 2.3 LIQUID PHASE EPITAXY 76
2.3.1 LPE GROWTH 77 2.3.2 LPE PROCESS 83 2.3.3 COMPARISON OF DIFFERENT
LPE TECHNIQUES 90 2.3.4 QUALITY CONTROL OF HGCDTE LPE FILMS 93 2.4
MOLECULAR BEAM EPITAXY GROWTH OF THIN FILMS 95 2.4.1 OVERVIEW OF THE
MOLECULAR BEAM EPITAXY PROCESS 96 2.4.2 REFLECTION HIGH-ENERGY ELECTRON
DIFFRACTION (RHEED) 101 2.4.3 MONITORING THE GROWTH TEMPERATURE 103
2.4.4 COMPOSITION CONTROL 110 X CONTENTS 2.5 PERFECTION OF CRYSTALS 116
2.5.1 X-RAY DOUBLE-CRYSTAL DIFFRACTION 116 2.5.2 MORPHOLOGY 127 2.5.3
PRECIPITATED PHASE IN HGI_ X CD X TE EPITAXIAL FILMS 130 2.5.4 NATIVE
POINT DEFECTS 136 REFERENCES 144 3 BAND STRUCTURES 151 3.1 GENERAL
DESCRIPTION OF BAND STRUCTURES 151 3.1.1 BAND STRUCTURE THEORY METHODS
151 3.1.2 A BRIEF TREATMENT OF BAND STRUCTURES OF NARROW GAP
SEMICONDUCTORS 155 3.2 THE HP PERTURBATION METHOD AND SECULAR EQUATIONS
161 3.2.1 THE HP FORMALISM 161 3.2.2 COMPLETE SECULAR EQUATION 164 3.2.3
SELECTION RULES 170 3.3 CALCULATION OF BAND STRUCTURES 180 3.3.1
SOLUTION AT KO=0 180 3.3.2 FIRST ORDER PERTURBATION CORRECTION DUE TO
THE HP TERM 182 3.3.3 PERTURBATION WITH BOTH HP AND (VK XP)»CR INCLUDED
183 3.3.4 SECOND ORDER PERTURBATION BETWEEN 0 LA AND 0 JSS 188 3.3.5
CONTRIBUTION FROM THE LINEAR K TERM H KSO 191 3.4 PARAMETERS OF THE
ENERGY BANDS 195 3.4.1 THE ENERGY GAP 195 3.4.2 THE ELECTRON EFFECTIVE
MASS OF THE CONDUCTION BAND 212 3.4.3 THE MOMENTUM MATRIX ELEMENT AND
THE HEAVY-HOLE EFFECTIVE MASS M H H 220 REFERENCE 221 APPENDIX 3A:
CRYSTALLOGRAPHY AND THE BLOCH THEOREM 227 APPENDIX 3B: OVERVIEWOF THE HP
METHOD 234 4 OPTICAL PROPERTIES 239 4.1 OPTICAL CONSTANTS AND THE
DIELECTRIC FUNCTION 239 4.1.1 FUNDAMENTALS 239 4.1.2 KRAMERS-KRONIG (KK)
RELATION AND OPTICAL CONSTANTS 242 4.1.3 DISPERSION OF THE REFRACTIVE
INDEX 246 4.1.4 EFFECT OF ELECTRIC AND MAGNETIC FIELDS ON OPTICAL
CONSTANTS .252 4.2 THEORY AND EXPERIMENT OF INTERBAND OPTICAL
TRANSITIONS 256 4.2.1 THE THEORY OF DIRECT INTERBAND OPTICAL TRANSITIONS
256 4.2.2 EXPERIMENTAL INVESTIGATIONS OF INTERBAND OPTICAL TRANSITIONS.
266 4.2.3 INDIRECT INTERBAND TRANSITIONS 274 CONTENTS XI 4.3 INTRINSIC
ABSORPTION SPECTRA EXPRESSIONS 279 4.3.1 THE ABSORPTION EDGE 279 4.3.2
AN ANALYTIC EXPRESSION FOR THE INTRINSIC ABSORPTION BAND 285 4.3.3 OTHER
EXPRESSIONS FOR THE INTRINSIC ABSORPTION COEFFICIENT 291 4.4 DIRECT
MEASUREMENTS OF OPTICAL CONSTANTS 296 4.4.1 INTRODUCTION 296 4.4.2 THE
PRINCIPLES OF SPECTROSCOPIC ELLIPSOMETRY 298 4.4.3 OPERATIONAL
CONFIGURATION 302 4.4.4 INVESTIGATION OF THE OPTICAL CONSTANTS OF HG!. X
CD X TE BY INFRARED SPECTROSCOPIC ELLIPSOMETRY 305 4.4.5 IN SITU
MONITORING OF THE COMPOSITION DURING HGI_ X CD X TE GROWTH 309 4.5
OPTICAL EFFECTS INDUCED BY FREE CARRIERS 316 4.5.1 MOSS-BURSTEIN EFFECT
316 4.5.2 GENERAL THEORY OF FREE CARRIER ABSORPTION 328 4.5.3 FREE
CARRIER ABSORPTION OF HG!. X CD X TE EPITAXIAL FILMS 334 4.5.4
MAGNETO-OPTIC EFFECT OF FREE CARRIERS 347 4.6 OPTICAL CHARACTERIZATION
OF MATERIALS 356 4.6.1 USING INFRARED-ABSORPTION SPECTRA TO DETERMINE
THE ALLOY COMPOSITION OF HGI_ X CD X TE 357 4.6.2 TRANSVERSE
COMPOSITIONAL UNIFORMITY OF HGI. X CD X TE SAMPLES 361 4.6.3 THE
LONGITUDINAL COMPOSITIONAL DISTRIBUTION OF HGI.^CD^TE EPILAYERS 366
4.6.4 USING INFRARED TRANSMISSION SPECTRA TO DETERMINE . THE PARAMETERS
OF A HGCDTE/CDTE/GAAS MULTILAYER STRUCTURE GROWN BY MBE 373 REFERENCES
379 5 TRANSPORT PROPERTIES 385 5.1 CARRIER CONCENTRATION AND THE FERMI
LEVEL 385 5.1.1 CARRIER STATISTICAL LAWS 385 5.1.2 INTRINSIC CARRIER
CONCENTRATION N 38 7 5.1.3 THE CARRIER CONCENTRATION AND THE FERMI LEVEL
FOR COMPENSATED SEMICONDUCTORS 399 5.2 CONDUCTIVITY AND MOBILITY 410
5.2.1 THE BOLTZMANN EQUATION AND CONDUCTIVITY 410 5.2.2 EXPERIMENTAL
RESULTS OF THE ELECTRON MOBILITY OFHG,. X CD X TE 416 5.2.3 AN
APPROXIMATE ANALYTIC EXPRESSION FOR THE ELECTRON MOBILITY OF N-TYPE HGI.
X CD X TE 425 5.2.4 AN EXPRESSION FOR THE HOLE MOBILITY OF P-HGI_ X CD X
TE 428 XII CONTENTS 5.3 TRANSPORT PROPERTIES IN MAGNETIC FIELD 430 5.3.1
CONDUCTIVITY TENSOR 430 5.3.2 HALL EFFECT 436 5.3.3 MAGNETO-RESISTANCE
EFFECT 441 5.3.4 MAGNETO-TRANSPORT EXPERIMENTAL METHODS 445 5.4 MOBILITY
SPECTRUM IN A MULTI-CARRIER SYSTEM 448 5.4.1 THE CONDUCTIVITY TENSOR OF
A MULTI-CARRIER SYSTEM 448 5.4.2 MULTI-CARRIER FITTING PROCEDURE 452
5.4.3 MOBILITY SPECTRUM ANALYSIS 456 5.4.4 QUANTITATIVE MOBILITY
SPECTRUM ANALYSIS 459 5.5 QUANTUM EFFECTS 470 5.5.1 MAGNETO-RESISTANCE
OSCILLATION 470 5.5.2 THE LONGITUDINAL MAGNETO-RESISTANCE OSCILLATIONS
OFN-INSB 478 5.5.3 THE MAGNETO-RESISTANCE OSCILLATIONS IN N-HGI. X CD X
TE 487 5.6 HOT ELECTRON EFFECTS 492 5.6.1 HOTELECTRONS 492 5.6.2 HOT
ELECTRON EFFECTS IN HGCDTE 495 REFERENCES 502 6 LATTICE VIBRATIONS 507
6.1 PHONON SPECTRA 507 6.1.1 MONATOMIC LINEAR CHAIN 507 6.1.2 PHONON
DISPERSION MEASUREMENT TECHNIQUES 511 6.1.3 THEORETICAL CALCULATIONS OF
THE PHONON SPECTRA 514 6.2 REFLECTION SPECTRA 528 6.2.1 TWO-MODEMODELOF
LATTICE VIBRATIONS 528 6.2.2 MULTI-MODE MODEL OF LATTICE VIBRATION 531
6.2.3 PLASMON OSCILLATION-LO PHONON COUPLING EFFECT 537 6.2.4 HGCDTE
FAR-INFRARED OPTICAL CONSTANT 543 6.3 TRANSMISSION SPECTRA 546 6.3.1
FAR-INFRARED TRANSMISSION SPECTRA 546 6.3.2 THE TWO-PHONON PROCESS 549
6.3.3 LOW-FREQUENCY ABSORPTION BAND OF HGI. X CD X TE ALLOYS 553 6.3.4
CHARACTERISTIC ESTIMATION OF PHONON SPECTRA 557 6.4 PHONON RAMAN
SCATTERING 559 6.4.1 POLARIZABILITY 559 6.4.2 SCATTERING CROSS-SECTION
568 6.4.3 APPLICATION OF SELECTIONRULES 578 6.4.4 RAMAN SCATTERING IN
HGCDTE 588 REFERENCE 595 INDEX 599 |
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| id | DE-604.BV023029248 |
| illustrated | Illustrated |
| index_date | 2024-07-02T19:16:20Z |
| indexdate | 2024-07-20T09:28:04Z |
| institution | BVB |
| isbn | 9780387747439 9780387748016 0387747435 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016233159 |
| oclc_num | 255689224 |
| open_access_boolean | |
| owner | DE-703 DE-20 |
| owner_facet | DE-703 DE-20 |
| physical | XII, 605 S. Ill., graph. Darst. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Springer |
| record_format | marc |
| series2 | Microdevices |
| spelling | Chu, Junhao Verfasser aut Physics and properties of narrow gap semiconductors Junhao Chu ; Arden Sher New York Springer 2008 XII, 605 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Microdevices Narrow gap semiconductors Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf Narrow-Gap-Halbleiter (DE-588)4238102-2 gnd rswk-swf Narrow-Gap-Halbleiter (DE-588)4238102-2 s Physikalische Eigenschaft (DE-588)4134738-9 s DE-604 Sher, Arden Sonstige oth text/html http://deposit.dnb.de/cgi-bin/dokserv?id=2990936&prov=M&dok_var=1&dok_ext=htm Inhaltstext GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016233159&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Chu, Junhao Physics and properties of narrow gap semiconductors Narrow gap semiconductors Physikalische Eigenschaft (DE-588)4134738-9 gnd Narrow-Gap-Halbleiter (DE-588)4238102-2 gnd |
| subject_GND | (DE-588)4134738-9 (DE-588)4238102-2 |
| title | Physics and properties of narrow gap semiconductors |
| title_auth | Physics and properties of narrow gap semiconductors |
| title_exact_search | Physics and properties of narrow gap semiconductors |
| title_exact_search_txtP | Physics and properties of narrow gap semiconductors |
| title_full | Physics and properties of narrow gap semiconductors Junhao Chu ; Arden Sher |
| title_fullStr | Physics and properties of narrow gap semiconductors Junhao Chu ; Arden Sher |
| title_full_unstemmed | Physics and properties of narrow gap semiconductors Junhao Chu ; Arden Sher |
| title_short | Physics and properties of narrow gap semiconductors |
| title_sort | physics and properties of narrow gap semiconductors |
| topic | Narrow gap semiconductors Physikalische Eigenschaft (DE-588)4134738-9 gnd Narrow-Gap-Halbleiter (DE-588)4238102-2 gnd |
| topic_facet | Narrow gap semiconductors Physikalische Eigenschaft Narrow-Gap-Halbleiter |
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