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Format:	Buch
Sprache:	English
Veröffentlicht:	Amsterdam [u.a.] Elsevier 2008
Schlagworte:	Nanostructured materials Silicon Nanostrukturiertes Material Silicium Nanopartikel
Online-Zugang:	Inhaltsverzeichnis Beschreibung für Leser Inhaltsverzeichnis
Beschreibung:	XVI, 368 S. Ill., graph. Darst.
ISBN:	0080445284 9780080445281

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Datensatz im Suchindex

_version_	1804137250336800768
adam_text	NANOSILICON EDITED BY VIJAY KUMAR DR. VIJAY KUMAR FOUNDATION, CHENNAI, INDIA AMSTERDAM * BOSTON * HEIDELBERG * LONDON * NEW YORK * OXFORD PARIS * SAN DIEGO * SAN FRANCISCO * SINGAPORE * SYDNEY * TOKYO CONTENTS PREFACE XV 1 SILICON NANOPARTICLES: NEW PHOTONIC AND ELECTRONIC MATERIAL AT THE TRANSITION BETWEEN SOLID AND MOLECULE 1 MUNIR H. NAYFEH AND LUBOS MITAS 1.1 INTRODUCTION 3 1.2 SYNTHESIS 3 1.2.1 PHYSICATTECHNIQUES 3 1.2.2 PHYSICO-CHEMICALTECHNIQUES 4 1.2.3 CHEMICAL TECHNIQUES 4 1.2.4 ELECTROCHEMICAL TECHNIQUES 4 1.2.5 DISCRETELY SIZED SI NANOPARTICLES 6 1.3 FUNCTIONALIZATION 8 1.3.1 INITIAL SURFACE CONDITION 9 1.3.2 ALKYLATED PARTICLES 11 1.3.2.1 ALCOHOL 11 1.3.2.2 ALKYLAMINE 13 1.3.2.3 ALKENE 14 1.3.2.4 CARBOXY 14 1.3.2.5 ALKYL AND ALKOXY 15 1.3.3 AGGREGATION AND SOLUBILITY 15 1.3.4 STABILITY IN ACID 17 1.4 SPECTROSCOPIC CHARACTERIZATION 17 1.4.1 FOURIER TRANSFORM INFRARED SPECTROSCOPY 17 1.4.2 NUCLEAR MAGNETIC RESONANCE 19 1.4.3 GEL PERMISSION CHROMOTOGRAPHY 20 1.4.4 X-RAY PHOTOSPECTROSCOPY 21 1.4.5 AUGER ELECTRON SPECTROSCOPY 21 1.4.6 TRANSMISSION ELECTRON MICROSCOPY 21 1.5 OPTICAL PROPERTIES 22 1.5.1 PL AND DETECTION OF SINGLE NANOPARTICLES 22 1.5.2 PL LIFETIME 26 1.5.3 CATHODOLUMINESCENCE AND ELECTROLUMINESCENCE 27 1.5.4 PHOTOSTABILITY UNDER UV AND INFRARED RADIATION 29 1.6 RECONSTITUTION OF PARTICLES IN FILMS 29 1.6.1 PRECIPITATION SPRAY 30 1.6.2 ELECTRODEPOSITION: COMPOSITE FILMS OF METAL AND NANOPARTICLES 31 VII VIII CONTENTS 1.6.3 SILICON SHEET ROLL INTO TUBES 32 1.6.4 SELF-ASSEMBLY 33 1.7 NONLINEAR OPTICAL PROPERTIES 34 1.7.1 STIMULATED EMISSION 34 1.7.2 SECOND HARMONIE GENERATION 39 1.7.3 GAIN AND OPTICAL NONLINEARITY 39 1.8 EFFECT OF FUNCTIONALIZATION ON EMISSION 41 1.9 STRUCTURE OF PARTICLES 41 1.9.1 LUMINESCENCE MODELS , 42 1.9.2 COMPUTATIONAL METHODS FOR ELECTRONIC STRUCTURE OF NANOCLUSTERS 43 1.9.2.1 DFT METHODS 44 1.9.2.2 QUANTUM MONTE CARLO 45 1.9.2.3 VARIATIONAL MONTE CARLO 45 1.9.2.4 DIFFUSION MONTE CARLO 46 1.9.2.5 APPLICATIONS TO SI CLUSTERS 46 1.9.3 PROTOTYPE OF HYDROGENATED PARTICLES (SUPERMOLECULE) 49 1.9.4 H 2 0 2 EFFECT ON SURFACE RECONSTRUCTION 51 1.9.5 NOVEL SI*SI BONDS (MOLECULAR-LIKE BEHAVIOUR) 52 1.9.6 STRUCTURALSTABILITYOFTHE PROTOTYPE 54 1.9.7 MATERIAL PROPERTIES: DIELECTRIC CONSTANT AND EFFECTIVE MASS 55 1.9.8 EXCITED STATES (MOLECULAR-LIKE BANDS) 57 1.9.9 COLLECTIVE MOIECULAR SURFACE 57 1.9.10 PHONON STRUCTURE: COLLECTIVE MOIECULAR VIBRATION MODES 59 1.9.11 MOLECULAR-LIKE EMISSION: DIRECT VERSUS INDIRECT PROCESS 60 1.9.12 X-RAY FORM FACTORS 61 1.9.13 EFFECT OFTERMINATION ONTHE BAND GAP 63 1.10 DEVICE APPLICATIONS 63 1.10.1 PHOTOELECTRIC CONVERSION/UV PHOTODETECTOR 64 1.10.2 METAL OXIDE SILICON MEMORY DEVICES 66 1.10.3 BIOPHOTONIC IMAGING 68 1.10.4 AMPEROMETRIC DETECTION 69 1.10.5 NANOSOLAR CELL 71 1.10.6 NANOINKPRINTING 72 1.10.7 SINGLE ELECTRON TRANSISTOR DEVICES 73 1.11 CONCLUSION 73 ACKNOWLEDGEMENTS 74 REFERENCES 74 2 CLUSTER ASSEMBLED SILICON NETWORKS 79 P. MELINON, X. BLASE, A. SAN MIGUEL AND A. PEREZ 2.1 INTRODUCTION 80 2.2 ISOLATED SILICON CLUSTERS 81 CONTENTS 2.2.1 SMALL SI W CLUSTERS (N 14) 81 2.2.2 MEDIUM-SIZED CLUSTERS (20 N 100): THE CASEOFSI 33 82 2.2.3 LARGE CLUSTERS (N 100) 82 2.3 SI-CLUSTER-ASSEMBLED MATERIALS 83 2.3.1 INTRODUCTION 83 2.3.2 SI-CLUSTER-ASSEMBLED FILMS 83 2.3.2.1 GAS-PHASE SYNTHESIS OF SI W CLUSTERS: EXPERIMENTAL METHODS 83 2.3.2.2 STRUCTURE AND MORPHOLOGY 86 2.3.2.3 ELECTRONIC STRUCTURE 90 2.3.2.4 VIBRATIONAL STRUCTURE 90 2.3.2.5 OPTICAL PROPERTIES 92 2.3.2.6 NEW BONDING FOR SILICON 93 2.3.3 BULK SI-CLUSTER-ASSEMBLED MATERIALS FROM FULLERENES: CLATHRATE PHASES 97 2.3.3.1 SILICON CLATHRATE STRUCTURES 98 2.3.3.2 SYNTHESIS METHODS 100 2.3.3.3 ELECTRONIC PROPERTIES OF EMPTY SILICON CLATHRATES 100 2.3.3.4 VIBRATIONAL PROPERTIES 101 2.3.3.5 COHESIVE ENERGY AND STABILITY UNDER PRESSURE OF SI-34 103 2.3.3.6 ENDOHEDRAL DOPING IN CLATHRATES 104 2.4 CONCLUSION 110 ACKNOWLEDGEMENTS 110 REFERENCES 111 METAL ENCAPSULATED CLUSTERS OF SILICON: SILICON FULLERENES AND OTHER POLYHEDRAL FORMS 114 VIJAY KUMAR 3.1 INTRODUCTION 115 3.2 CLUSTERS OF ELEMENTAL SILICON 118 3.3 METAL ENCAPSULATION: A NEW PARADIGM 121 3.3.1 SILICON FULLERENES 121 3.3.2 METAL SIZE DEPENDENT ENCAPSULATED SILICON STRUCTURES 122 3.3.3 THE ELECTRONIC FACTOR AND THE ISOLATED RHOMBUS RULE 124 3.3.4 REACTIVITY AS A PROBE OF METAL ENCAPSULATION 137 3.3.5 VIBRATIONAL PROPERTIES 137 3.3.6 EMPTY AND ENDOHEDRAL HYDROGENATED FULLERENE CAGESOF SILICON 139 3.3.7 ABSORPTION SPECTRA 142 3.3.8 MAGNETIC CLUSTERS OF SILICON 142 3.4 SUMMARY 144 ACKNOWLEDGMENTS 145 REFERENCES 145 CONTENTS 4 POROUS SILICON - SENSORS AND FUTURE APPLICATIONS 149 JAMES L. GOLE AND STEPHEN E. LEWIS 4.1 INTRODUCTION 150 4.2 KINDS OF PS 151 4.2.1 PORE STRUCTURE IN PS 151 4.2.2 PLFROMPS 153 4.2.2.1 PHOTOLUMINESCENT ENHANCEMENT AND STABILIZATION 155 4.2.2.2 PL-INDUCED METALLIZATION 155 4.3 PS SENSORS 157 4.3.1 PS HUMIDITY SENSORS 157 4.3.2 PS CHEMICAL SENSORS 161 4.3.3 PS GAS SENSORS 161 4.3.3.1 N0 2 SENSORS 162 4.3.3.2 HYDROCARBON SENSORS 164 4.3.3.3 LOW-COST MULTI-APPLICATION GAS SENSORS 164 4.4 FUTURE TECHNOLOGY 168 4.4.1 NANOPARTICLE PHOTOCATALYTIC COATING OF PS 168 4.4.2 LITHIUM ELECTROLYTE-BASED PS MICROBATTERY ELECTRODES 170 4.5 CONCLUSIONS 172 REFERENCES 172 5 SILICON NANOWIRES AND NANOWIRE HETEROSTRUCTURES 176 ZHAOHUI ZHONG, CHEN YANG AND CHARLES M. LIEBER 5.1 INTRODUCTION 177 5.2 SILICON NANOWIRES 177 5.2.1 RATIONAL SYNTHESIS AND STRUCTURAL CHARACTERIZATION OF SINW 177 5.2.1.1 OVERVIEW OF SINW 1D GROWTH 178 5.2.1.2 STRUCTURAL CHARACTERIZATION OFSINWS 180 5.2.1.3 RATIONAL CONTROLOF SINW DIAMETERS 182 5.2.2 ELECTRONIC PROPERTIESOFSINWS 182 5.2.2.1 ROOMTEMPERATURE ELECTRONIC PROPERTIESOFSINWS 183 5.2.2.2 FUNDAMENTAL TRANSPORT STUDIESOFSINWS 186 5.2.3 SINWS FOR NANOELECTRONICS 190 5.2.3.1 CROSSED NANOWIRE STRUCTURES AND DEVICES 191 5.2.3.2 CROSSED NANOWIRE-BASED LOGIC GATES 191 5.2.3.3 NANOWIRE CROSSBAR ARRAYS AS ADDRESS DECODERS 193 5.2.3.4 SINW ELECTRONICS ON NON-CONVENTIONAL SUBSTRATES 194 5.2.4 LARGE-SCALE HIERARCHICAL ORGANIZATION OF SINW ARRAYS 195 5.2.4.1 LANGMUIR-BLODGETT-BASED ASSEMBLY OF NANOWIRES 196 5.2.4.2 SCALABLE INTEGRATION OF NANOWIRE DEVICES 197 5.2.4.3 HIGH-FREQUENCY NANOWIRE CIRCUITS 199 CONTENTS XI 5.2.5 SINWS AS NANOSCALE SENSORS 200 5.2.5.1 NANOWIRE FIELD-EFFECT SENSORS 201 5.2.5.2 SINGLE VIRUS DETECTION 202 5.2.5.3 MULTIPLEXED DETECTION AT THE SINGLE VIRUS LEVEL 203 5.3 SINW HETEROSTRUCTURES 204 5.3.1 NISI/SINW HETEROSTRUCTURES 204 5.3.2 MODULATION DOPED SINWS 204 5.3.2.1 SYNTHESIS AND CHARACTERIZATION OF MODULATION DOPED SINWS 205 5.3.2.2 NOVEL APPLICATIONS OF MODULATION DOPED SINWS 208 5.3.3 BRANCHED AND HYPER-BRANCHED SINWS 209 5.4 SUMMARY 213 REFERENCES 214 6 THEORETICAL ADVANCES IN THE ELECTRONIC AND ATOMIC STRUCTURES OF SILICON NANOTUBES AND NANOWIRES 217 ABHISHEK KUMAR SINGH, VIJAY KUMAR AND YOSHIYUKI KAWAZOE 6.1 INTRODUCTION 218 6.2 COMPUTATIONALAPPROACH 220 6.3 SILICON NANOTUBES 220 6.3.1 METAL ENCAPSULATED NANOTUBES OF SILICON 222 6.3.2 ELECTRONIC STRUCTURE AND BONDING NATURE 225 6.3.3 MAGNETISM IN METAL ENCAPSULATED SINTS 228 6.4 GERMANIUM NANOTUBES 231 6.4.1 METALLIC AND SEMICONDUCTING NANOTUBES OF GE 233 6.5 SILICON NANOWIRES 235 6.5.1 NON-CRYSTALLINE PRISTINE SINWS 237 6.5.2 CRYSTALLINE PRISTINE SINWS 238 6.5.3 BAND STRUCTURE OF SINWS 243 6.6 HYDROGENATED NANOWIRES 244 6.6.1 ELECTRONIC STRUCTURE OF HYDROGENATED SINWS 249 6.6.2 EFFECTS OF DOPING AND H DEFECTS 251 6.7 NANOWIRE SUPERLATTICES 253 6.8 CONCLUSION AND PERSPECTIVE REMARKS 254 ACKNOWLEDGEMENTS 255 REFERENCES 255 7 PHONONS IN SILICON NANOWIRES 258 KOFI W. ADU, HUMBERTO R. GUTIERREZ AND PETER C. EKLUND 7.1 INTRODUCTION 259 7.2 THEORETICAL MODELS FOR CONFINED PHONONS 261 7.2.1 LATTICE DYNAMICS OFSI NANOWIRES 261 XII CONTENTS 7.2.2 THE RICHTER MODEL FOR RAMAN SCATTERING FROM CONFINED PHONONS 267 7.3 EXPERIMENTAL EVIDENCE OF CONFINED PHONONS IN SILICON 269 7.3.1 ACOUSTIC PHONONS 269 7.3.2 OPTICAL PHONONS 273 7.3.3 THERMAL CONDUCTIVITY 275 7.4 EFFECTS OF INHOMOGENEOUS LASER HEATING ON RAMAN LINESHAPE 278 7.4.1 STOKES-ANTISTOKES RATIO AS A PROBE OF LASER HEATING OFSI NANOWIRES 279 7.4.2 EVOLUTION OF THE RAMAN BAND ASYMMETRY WITH LASER FLUX 280 7.4.3 MODIFICATION OF RICHTER S LINESHAPE FUNCTION TO INCLUDE INHOMOGENEOUS HEATING 282 7.5 SUMMARY AND CONCLUSIONS 285 ACKNOWLEDGEMENTS 285 REFERENCES 286 8 QUASI-ONE-DIMENSIONAL SILICON NANOSTRUCTURES 289 YU LIN, NEVILL GONZALEZ SZWACKI AND BORIS I. YAKOBSON 8.1 INTRODUCTION 290 8.2 SILICON NANOWIRES 290 8.2.1 PENTAGONAL SILICON WIRES 290 8.2.1.1 WULLFS CONSTRUCTION GENERALIZED 291 8.2.1.2 PENTAGONAL SHAPE SINW 291 8.2.1.3 GROUND STATE OFTHETHINNEST SINW 292 8.2.1.4 KINETICADVANTAGESOF P\|\| SINW 296 8.2.2 HYDROGEN-PASSIVATED SILICON WIRES 297 8.3 METAL SILICIDE 300 8.3.1 ENDOHEDRAL SILICON NANOTUBES 301 8.3.2 YTTRIUM SILICIDE NW 307 8.3.3 ENERGY DECOMPOSITION 308 ACKNOWLEDGEMENTS 311 REFERENCES 312 9 LOW-DIMENSIONAL SILICON AS A PHOTONIC MATERIAL 314 N. DALDOSSO AND L. PAVESI 9.1 THE NEED OF A SILICON-BASED PHOTONICS 314 9.2 VARIOUS APPROACHES TO A SILICON LIGHT SOURCE 316 9.2.1 SILICON RAMAN LASER 317 9.2.2 BULK SILICON LIGHT EMITTING DIODES 319 9.3 OPTICAL GAIN IN SILICON NANOCRYSTALS 321 9.3.1 CW AND TR MEASUREMENTS 322 9.3.2 GAIN MODEL: FOUR-LEVEL SYSTEM 325 CONTENTS XIII 9.3.3 OTHER KEY INGREDIENTS 327 9.4 ER COUPLED SI NANOCRYSTALOPTICALAMPLIFIERS 328 9.4.1 ER 3+ INTERNAL TRANSITION 329 9.4.2 ER 3+ AND SI-NC INTERACTIONS 330 9.4.3 ER 3+ CROSS SECTIONS 330 9.5 CONCLUSIONS 332 ACKNOWLEDGEMENTS 333 REFERENCES 333 10 NANOSILICON SINGLE-ELECTRON TRANSISTORS AND MEMORY 335 Z. A. K. DURRANI AND H. AHMED 10.1 INTRODUCTION 335 10.1.1 SINGLE-ELECTRON AND QUANTUM CONFINEMENT EFFECTS 337 10.2 NANOSILICON SETS 341 10.2.1 CONDUCTION IN CONTINUOUS NANOCRYSTALLINE SILICON FILMS 341 10.2.2 SILICON NANOWIRE SETS 343 10.2.3 POINT-CONTACT SETS: ROOMTEMPERATURE OPERATION 346 10.2.4 GRAIN-BOUNDARY ENGINEERING 350 10.2.5 SINGLE-ELECTRON TRANSISTORS USING SILICON NANOCRYSTALS 351 10.2.6 COMPARISON WITH CRYSTALLINE SILICON SETS 352 10.3 ELECTRON COUPLING EFFECTS IN NANOSILICON 352 10.3.1 ELECTROSTATIC COUPLING EFFECTS 354 10.3.2 ELECTRON WAVEFUNCTION COUPLING EFFECTS 354 10.4 NANOSILICON MEMORY 356 REFERENCES 358 INDEX 361
adam_txt	NANOSILICON EDITED BY VIJAY KUMAR DR. VIJAY KUMAR FOUNDATION, CHENNAI, INDIA AMSTERDAM * BOSTON * HEIDELBERG * LONDON * NEW YORK * OXFORD PARIS * SAN DIEGO * SAN FRANCISCO * SINGAPORE * SYDNEY * TOKYO CONTENTS PREFACE XV 1 SILICON NANOPARTICLES: NEW PHOTONIC AND ELECTRONIC MATERIAL AT THE TRANSITION BETWEEN SOLID AND MOLECULE 1 MUNIR H. NAYFEH AND LUBOS MITAS 1.1 INTRODUCTION 3 1.2 SYNTHESIS 3 1.2.1 PHYSICATTECHNIQUES 3 1.2.2 PHYSICO-CHEMICALTECHNIQUES 4 1.2.3 CHEMICAL TECHNIQUES 4 1.2.4 ELECTROCHEMICAL TECHNIQUES 4 1.2.5 DISCRETELY SIZED SI NANOPARTICLES 6 1.3 FUNCTIONALIZATION 8 1.3.1 INITIAL SURFACE CONDITION 9 1.3.2 ALKYLATED PARTICLES 11 1.3.2.1 ALCOHOL 11 1.3.2.2 ALKYLAMINE 13 1.3.2.3 ALKENE 14 1.3.2.4 CARBOXY 14 1.3.2.5 ALKYL AND ALKOXY 15 1.3.3 AGGREGATION AND SOLUBILITY 15 1.3.4 STABILITY IN ACID 17 1.4 SPECTROSCOPIC CHARACTERIZATION 17 1.4.1 FOURIER TRANSFORM INFRARED SPECTROSCOPY 17 1.4.2 NUCLEAR MAGNETIC RESONANCE 19 1.4.3 GEL PERMISSION CHROMOTOGRAPHY 20 1.4.4 X-RAY PHOTOSPECTROSCOPY 21 1.4.5 AUGER ELECTRON SPECTROSCOPY 21 1.4.6 TRANSMISSION ELECTRON MICROSCOPY 21 1.5 OPTICAL PROPERTIES 22 1.5.1 PL AND DETECTION OF SINGLE NANOPARTICLES 22 1.5.2 PL LIFETIME 26 1.5.3 CATHODOLUMINESCENCE AND ELECTROLUMINESCENCE 27 1.5.4 PHOTOSTABILITY UNDER UV AND INFRARED RADIATION 29 1.6 RECONSTITUTION OF PARTICLES IN FILMS 29 1.6.1 PRECIPITATION SPRAY 30 1.6.2 ELECTRODEPOSITION: COMPOSITE FILMS OF METAL AND NANOPARTICLES 31 VII VIII CONTENTS 1.6.3 SILICON SHEET ROLL INTO TUBES 32 1.6.4 SELF-ASSEMBLY 33 1.7 NONLINEAR OPTICAL PROPERTIES 34 1.7.1 STIMULATED EMISSION 34 1.7.2 SECOND HARMONIE GENERATION 39 1.7.3 GAIN AND OPTICAL NONLINEARITY 39 1.8 EFFECT OF FUNCTIONALIZATION ON EMISSION 41 1.9 STRUCTURE OF PARTICLES 41 1.9.1 LUMINESCENCE MODELS , 42 1.9.2 COMPUTATIONAL METHODS FOR ELECTRONIC STRUCTURE OF NANOCLUSTERS 43 1.9.2.1 DFT METHODS 44 1.9.2.2 QUANTUM MONTE CARLO 45 1.9.2.3 VARIATIONAL MONTE CARLO 45 1.9.2.4 DIFFUSION MONTE CARLO 46 1.9.2.5 APPLICATIONS TO SI CLUSTERS 46 1.9.3 PROTOTYPE OF HYDROGENATED PARTICLES (SUPERMOLECULE) 49 1.9.4 H 2 0 2 EFFECT ON SURFACE RECONSTRUCTION 51 1.9.5 NOVEL SI*SI BONDS (MOLECULAR-LIKE BEHAVIOUR) 52 1.9.6 STRUCTURALSTABILITYOFTHE PROTOTYPE 54 1.9.7 MATERIAL PROPERTIES: DIELECTRIC CONSTANT AND EFFECTIVE MASS 55 1.9.8 EXCITED STATES (MOLECULAR-LIKE BANDS) 57 1.9.9 COLLECTIVE MOIECULAR SURFACE 57 1.9.10 PHONON STRUCTURE: COLLECTIVE MOIECULAR VIBRATION MODES 59 1.9.11 MOLECULAR-LIKE EMISSION: DIRECT VERSUS INDIRECT PROCESS 60 1.9.12 X-RAY FORM FACTORS 61 1.9.13 EFFECT OFTERMINATION ONTHE BAND GAP 63 1.10 DEVICE APPLICATIONS 63 1.10.1 PHOTOELECTRIC CONVERSION/UV PHOTODETECTOR 64 1.10.2 METAL OXIDE SILICON MEMORY DEVICES 66 1.10.3 BIOPHOTONIC IMAGING 68 1.10.4 AMPEROMETRIC DETECTION 69 1.10.5 NANOSOLAR CELL 71 1.10.6 NANOINKPRINTING 72 1.10.7 SINGLE ELECTRON TRANSISTOR DEVICES 73 1.11 CONCLUSION 73 ACKNOWLEDGEMENTS 74 REFERENCES 74 2 CLUSTER ASSEMBLED SILICON NETWORKS 79 P. MELINON, X. BLASE, A. SAN MIGUEL AND A. PEREZ 2.1 INTRODUCTION 80 2.2 ISOLATED SILICON CLUSTERS 81 CONTENTS 2.2.1 SMALL SI W CLUSTERS (N 14) 81 2.2.2 MEDIUM-SIZED CLUSTERS (20 N 100): THE CASEOFSI 33 82 2.2.3 LARGE CLUSTERS (N 100) 82 2.3 SI-CLUSTER-ASSEMBLED MATERIALS 83 2.3.1 INTRODUCTION 83 2.3.2 SI-CLUSTER-ASSEMBLED FILMS 83 2.3.2.1 GAS-PHASE SYNTHESIS OF SI W CLUSTERS: EXPERIMENTAL METHODS 83 2.3.2.2 STRUCTURE AND MORPHOLOGY 86 2.3.2.3 ELECTRONIC STRUCTURE 90 2.3.2.4 VIBRATIONAL STRUCTURE 90 2.3.2.5 OPTICAL PROPERTIES 92 2.3.2.6 NEW BONDING FOR SILICON 93 2.3.3 BULK SI-CLUSTER-ASSEMBLED MATERIALS FROM FULLERENES: CLATHRATE PHASES 97 2.3.3.1 SILICON CLATHRATE STRUCTURES 98 2.3.3.2 SYNTHESIS METHODS 100 2.3.3.3 ELECTRONIC PROPERTIES OF EMPTY SILICON CLATHRATES 100 2.3.3.4 VIBRATIONAL PROPERTIES 101 2.3.3.5 COHESIVE ENERGY AND STABILITY UNDER PRESSURE OF SI-34 103 2.3.3.6 ENDOHEDRAL DOPING IN CLATHRATES 104 2.4 CONCLUSION 110 ACKNOWLEDGEMENTS 110 REFERENCES 111 METAL ENCAPSULATED CLUSTERS OF SILICON: SILICON FULLERENES AND OTHER POLYHEDRAL FORMS 114 VIJAY KUMAR 3.1 INTRODUCTION 115 3.2 CLUSTERS OF ELEMENTAL SILICON 118 3.3 METAL ENCAPSULATION: A NEW PARADIGM 121 3.3.1 SILICON FULLERENES 121 3.3.2 METAL SIZE DEPENDENT ENCAPSULATED SILICON STRUCTURES 122 3.3.3 THE ELECTRONIC FACTOR AND THE ISOLATED RHOMBUS RULE 124 3.3.4 REACTIVITY AS A PROBE OF METAL ENCAPSULATION 137 3.3.5 VIBRATIONAL PROPERTIES 137 3.3.6 EMPTY AND ENDOHEDRAL HYDROGENATED FULLERENE CAGESOF SILICON 139 3.3.7 ABSORPTION SPECTRA 142 3.3.8 MAGNETIC CLUSTERS OF SILICON 142 3.4 SUMMARY 144 ACKNOWLEDGMENTS 145 REFERENCES 145 CONTENTS 4 POROUS SILICON - SENSORS AND FUTURE APPLICATIONS 149 JAMES L. GOLE AND STEPHEN E. LEWIS 4.1 INTRODUCTION 150 4.2 KINDS OF PS 151 4.2.1 PORE STRUCTURE IN PS 151 4.2.2 PLFROMPS 153 4.2.2.1 PHOTOLUMINESCENT ENHANCEMENT AND STABILIZATION 155 4.2.2.2 PL-INDUCED METALLIZATION 155 4.3 PS SENSORS 157 4.3.1 PS HUMIDITY SENSORS 157 4.3.2 PS CHEMICAL SENSORS 161 4.3.3 PS GAS SENSORS 161 4.3.3.1 N0 2 SENSORS 162 4.3.3.2 HYDROCARBON SENSORS 164 4.3.3.3 LOW-COST MULTI-APPLICATION GAS SENSORS 164 4.4 FUTURE TECHNOLOGY 168 4.4.1 NANOPARTICLE PHOTOCATALYTIC COATING OF PS 168 4.4.2 LITHIUM ELECTROLYTE-BASED PS MICROBATTERY ELECTRODES 170 4.5 CONCLUSIONS 172 REFERENCES 172 5 SILICON NANOWIRES AND NANOWIRE HETEROSTRUCTURES 176 ZHAOHUI ZHONG, CHEN YANG AND CHARLES M. LIEBER 5.1 INTRODUCTION 177 5.2 SILICON NANOWIRES 177 5.2.1 RATIONAL SYNTHESIS AND STRUCTURAL CHARACTERIZATION OF SINW 177 5.2.1.1 OVERVIEW OF SINW 1D GROWTH 178 5.2.1.2 STRUCTURAL CHARACTERIZATION OFSINWS 180 5.2.1.3 RATIONAL CONTROLOF SINW DIAMETERS 182 5.2.2 ELECTRONIC PROPERTIESOFSINWS 182 5.2.2.1 ROOMTEMPERATURE ELECTRONIC PROPERTIESOFSINWS 183 5.2.2.2 FUNDAMENTAL TRANSPORT STUDIESOFSINWS 186 5.2.3 SINWS FOR NANOELECTRONICS 190 5.2.3.1 CROSSED NANOWIRE STRUCTURES AND DEVICES 191 5.2.3.2 CROSSED NANOWIRE-BASED LOGIC GATES 191 5.2.3.3 NANOWIRE CROSSBAR ARRAYS AS ADDRESS DECODERS 193 5.2.3.4 SINW ELECTRONICS ON NON-CONVENTIONAL SUBSTRATES 194 5.2.4 LARGE-SCALE HIERARCHICAL ORGANIZATION OF SINW ARRAYS 195 5.2.4.1 LANGMUIR-BLODGETT-BASED ASSEMBLY OF NANOWIRES 196 5.2.4.2 SCALABLE INTEGRATION OF NANOWIRE DEVICES 197 5.2.4.3 HIGH-FREQUENCY NANOWIRE CIRCUITS 199 CONTENTS XI 5.2.5 SINWS AS NANOSCALE SENSORS 200 5.2.5.1 NANOWIRE FIELD-EFFECT SENSORS 201 5.2.5.2 SINGLE VIRUS DETECTION 202 5.2.5.3 MULTIPLEXED DETECTION AT THE SINGLE VIRUS LEVEL 203 5.3 SINW HETEROSTRUCTURES 204 5.3.1 NISI/SINW HETEROSTRUCTURES 204 5.3.2 MODULATION DOPED SINWS 204 5.3.2.1 SYNTHESIS AND CHARACTERIZATION OF MODULATION DOPED SINWS 205 5.3.2.2 NOVEL APPLICATIONS OF MODULATION DOPED SINWS 208 5.3.3 BRANCHED AND HYPER-BRANCHED SINWS 209 5.4 SUMMARY 213 REFERENCES 214 6 THEORETICAL ADVANCES IN THE ELECTRONIC AND ATOMIC STRUCTURES OF SILICON NANOTUBES AND NANOWIRES 217 ABHISHEK KUMAR SINGH, VIJAY KUMAR AND YOSHIYUKI KAWAZOE 6.1 INTRODUCTION 218 6.2 COMPUTATIONALAPPROACH 220 6.3 SILICON NANOTUBES 220 6.3.1 METAL ENCAPSULATED NANOTUBES OF SILICON 222 6.3.2 ELECTRONIC STRUCTURE AND BONDING NATURE 225 6.3.3 MAGNETISM IN METAL ENCAPSULATED SINTS 228 6.4 GERMANIUM NANOTUBES 231 6.4.1 METALLIC AND SEMICONDUCTING NANOTUBES OF GE 233 6.5 SILICON NANOWIRES 235 6.5.1 NON-CRYSTALLINE PRISTINE SINWS 237 6.5.2 CRYSTALLINE PRISTINE SINWS 238 6.5.3 BAND STRUCTURE OF SINWS 243 6.6 HYDROGENATED NANOWIRES 244 6.6.1 ELECTRONIC STRUCTURE OF HYDROGENATED SINWS 249 6.6.2 EFFECTS OF DOPING AND H DEFECTS 251 6.7 NANOWIRE SUPERLATTICES 253 6.8 CONCLUSION AND PERSPECTIVE REMARKS 254 ACKNOWLEDGEMENTS 255 REFERENCES 255 7 PHONONS IN SILICON NANOWIRES 258 KOFI W. ADU, HUMBERTO R. GUTIERREZ AND PETER C. EKLUND 7.1 INTRODUCTION 259 7.2 THEORETICAL MODELS FOR CONFINED PHONONS 261 7.2.1 LATTICE DYNAMICS OFSI NANOWIRES 261 XII CONTENTS 7.2.2 THE RICHTER MODEL FOR RAMAN SCATTERING FROM CONFINED PHONONS 267 7.3 EXPERIMENTAL EVIDENCE OF CONFINED PHONONS IN SILICON 269 7.3.1 ACOUSTIC PHONONS 269 7.3.2 OPTICAL PHONONS 273 7.3.3 THERMAL CONDUCTIVITY 275 7.4 EFFECTS OF INHOMOGENEOUS LASER HEATING ON RAMAN LINESHAPE 278 7.4.1 STOKES-ANTISTOKES RATIO AS A PROBE OF LASER HEATING OFSI NANOWIRES 279 7.4.2 EVOLUTION OF THE RAMAN BAND ASYMMETRY WITH LASER FLUX 280 7.4.3 MODIFICATION OF RICHTER'S LINESHAPE FUNCTION TO INCLUDE INHOMOGENEOUS HEATING 282 7.5 SUMMARY AND CONCLUSIONS 285 ACKNOWLEDGEMENTS 285 REFERENCES 286 8 QUASI-ONE-DIMENSIONAL SILICON NANOSTRUCTURES 289 YU LIN, NEVILL GONZALEZ SZWACKI AND BORIS I. YAKOBSON 8.1 INTRODUCTION 290 8.2 SILICON NANOWIRES 290 8.2.1 PENTAGONAL SILICON WIRES 290 8.2.1.1 WULLFS CONSTRUCTION GENERALIZED 291 8.2.1.2 PENTAGONAL SHAPE SINW 291 8.2.1.3 GROUND STATE OFTHETHINNEST SINW 292 8.2.1.4 KINETICADVANTAGESOF P\|\| SINW 296 8.2.2 HYDROGEN-PASSIVATED SILICON WIRES 297 8.3 METAL SILICIDE 300 8.3.1 ENDOHEDRAL SILICON NANOTUBES 301 8.3.2 YTTRIUM SILICIDE NW 307 8.3.3 ENERGY DECOMPOSITION 308 ACKNOWLEDGEMENTS 311 REFERENCES 312 9 LOW-DIMENSIONAL SILICON AS A PHOTONIC MATERIAL 314 N. DALDOSSO AND L. PAVESI 9.1 THE NEED OF A SILICON-BASED PHOTONICS 314 9.2 VARIOUS APPROACHES TO A SILICON LIGHT SOURCE 316 9.2.1 SILICON RAMAN LASER 317 9.2.2 BULK SILICON LIGHT EMITTING DIODES 319 9.3 OPTICAL GAIN IN SILICON NANOCRYSTALS 321 9.3.1 CW AND TR MEASUREMENTS 322 9.3.2 GAIN MODEL: FOUR-LEVEL SYSTEM 325 CONTENTS XIII 9.3.3 OTHER KEY INGREDIENTS 327 9.4 ER COUPLED SI NANOCRYSTALOPTICALAMPLIFIERS 328 9.4.1 ER 3+ INTERNAL TRANSITION 329 9.4.2 ER 3+ AND SI-NC INTERACTIONS 330 9.4.3 ER 3+ CROSS SECTIONS 330 9.5 CONCLUSIONS 332 ACKNOWLEDGEMENTS 333 REFERENCES 333 10 NANOSILICON SINGLE-ELECTRON TRANSISTORS AND MEMORY 335 Z. A. K. DURRANI AND H. AHMED 10.1 INTRODUCTION 335 10.1.1 SINGLE-ELECTRON AND QUANTUM CONFINEMENT EFFECTS 337 10.2 NANOSILICON SETS 341 10.2.1 CONDUCTION IN CONTINUOUS NANOCRYSTALLINE SILICON FILMS 341 10.2.2 SILICON NANOWIRE SETS 343 10.2.3 POINT-CONTACT SETS: ROOMTEMPERATURE OPERATION 346 10.2.4 "GRAIN-BOUNDARY" ENGINEERING 350 10.2.5 SINGLE-ELECTRON TRANSISTORS USING SILICON NANOCRYSTALS 351 10.2.6 COMPARISON WITH CRYSTALLINE SILICON SETS 352 10.3 ELECTRON COUPLING EFFECTS IN NANOSILICON 352 10.3.1 ELECTROSTATIC COUPLING EFFECTS 354 10.3.2 ELECTRON WAVEFUNCTION COUPLING EFFECTS 354 10.4 NANOSILICON MEMORY 356 REFERENCES 358 INDEX 361
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spellingShingle	Nanosilicon Nanostructured materials Silicon Nanostrukturiertes Material (DE-588)4342626-8 gnd Silicium (DE-588)4077445-4 gnd Nanopartikel (DE-588)4333369-2 gnd
subject_GND	(DE-588)4342626-8 (DE-588)4077445-4 (DE-588)4333369-2
title	Nanosilicon
title_auth	Nanosilicon
title_exact_search	Nanosilicon
title_exact_search_txtP	Nanosilicon
title_full	Nanosilicon ed. by Vijay Kumar
title_fullStr	Nanosilicon ed. by Vijay Kumar
title_full_unstemmed	Nanosilicon ed. by Vijay Kumar
title_short	Nanosilicon
title_sort	nanosilicon
topic	Nanostructured materials Silicon Nanostrukturiertes Material (DE-588)4342626-8 gnd Silicium (DE-588)4077445-4 gnd Nanopartikel (DE-588)4333369-2 gnd
topic_facet	Nanostructured materials Silicon Nanostrukturiertes Material Silicium Nanopartikel
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