Gallium nitride electronics:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2008
|
| Schriftenreihe: | Springer series in materials science
96 |
| Schlagworte: | |
| Online-Zugang: | Beschreibung für Leser Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | XXIX, 469 S. Ill., graph. Darst. |
| ISBN: | 9783540718901 |
Internformat
MARC
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| 020 | |a 9783540718901 |9 978-3-540-71890-1 | ||
| 035 | |a (OCoLC)237019934 | ||
| 035 | |a (DE-599)BVBBV022966967 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
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| 100 | 1 | |a Quay, Rüdiger |d 1971- |e Verfasser |0 (DE-588)123732123 |4 aut | |
| 245 | 1 | 0 | |a Gallium nitride electronics |c Rüdiger Quay |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2008 | |
| 300 | |a XXIX, 469 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Springer series in materials science |v 96 | |
| 650 | 4 | |a Gallium nitride | |
| 650 | 4 | |a Semiconductors | |
| 650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Verbindungstechnik |0 (DE-588)4129183-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Integration |g Mikroelektronik |0 (DE-588)4218840-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Stoffeigenschaft |0 (DE-588)4192147-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Borgruppennitride |0 (DE-588)4590273-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nitride |0 (DE-588)4171929-3 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
| 689 | 0 | 1 | |a Borgruppennitride |0 (DE-588)4590273-2 |D s |
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| 689 | 0 | 4 | |a Verbindungstechnik |0 (DE-588)4129183-9 |D s |
| 689 | 0 | |5 DE-604 | |
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| 689 | 1 | 1 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
| 689 | 1 | 2 | |a Nitride |0 (DE-588)4171929-3 |D s |
| 689 | 1 | 3 | |a Stoffeigenschaft |0 (DE-588)4192147-1 |D s |
| 689 | 1 | 4 | |a Integration |g Mikroelektronik |0 (DE-588)4218840-4 |D s |
| 689 | 1 | 5 | |a Verbindungstechnik |0 (DE-588)4129183-9 |D s |
| 689 | 1 | |5 DE-604 | |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe |z 978-3-540-71892-5 |
| 830 | 0 | |a Springer series in materials science |v 96 |w (DE-604)BV000683335 |9 96 | |
| 856 | 4 | |u http://deposit.dnb.de/cgi-bin/dokserv?id=3094889&prov=M&dok_var=1&dok_ext=htm |3 Beschreibung für Leser | |
| 856 | 4 | |u http://www.gbv.de/dms/ilmenau/toc/54336044X.PDF |3 Inhaltsverzeichnis | |
| 856 | 4 | 2 | |m SWB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016171272&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-016171272 | |
Datensatz im Suchindex
| _version_ | 1805089636933959680 |
|---|---|
| adam_text |
CONTENTS LIST OF SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . XVII LIST OF ACRONYMS . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . XXV 1 INTRODUCTION 2 III-N MATERIALS, AND THE STATE-OF-THE-ART
OF DEVICES AND CIRCUITS . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 3 2.1 STATE-OF-THE-ART OF
MATERIALS RESEARCH . . . . . . . . . . . . . . . . . . . 3 2.1.2
MATERIAL LIMITATIONS . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 20 2.1.3 THERMAL PROPERTIES AND LIMITATIONS . . . . . . . . . . .
. . . . 21 2.1.4 TERNARY AND QUATERNARY III-N MATERIALS . . . . . . . .
. . . 23 2.2.1 SPONTANEOUS POLARIZATION . . . . . . . . . . . . . . . .
. . . . . . . . . 28 2.2.2 PIEZOELECTRIC POLARIZATION . . . . . . . . .
. . . . . . . . . . . . . . . . 30 2.2.3 DEVICE DESIGN USING
POLARIZATION-INDUCED CHARGES . . 32 2.2.4 ANALYTICAL CALCULATION OF
CHANNEL CHARGE CONCENTRATIONS . . . . . . . . . . . . . . . . . 38 2.2.5
DOPING ISSUES . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 38 2.2.6 SURFACES AND INTERFACES . . . . . . . . . . . . . .
. . . . . . . . . . . . . 40 2.2.7 TRANSPORT PROPERTIES IN POLARIZED
SEMICONDUCTORS . . . 46 2.2.8 POLARIZATION-BASED DEVICES AND THEIR
SPECIFIC PROPERTIES . . . . . . . . . . . . . . . . . . . . . 48 2.3
ELECTRICAL AND THERMAL LIMITATIONS OF MATERIALS AND DEVICES 48 2.3.1
PHYSICAL MODELING OF DEVICES . . . . . . . . . . . . . . . . . . . . .
49 2.3.2 DEVICES: FIGURES-OF-MERIT . . . . . . . . . . . . . . . . . . .
. . . . . . 51 2.3.3 III-N DEVICES: FREQUENCY DISPERSION . . . . . . . .
. . . . . . . 52 2.4 SUBSTRATES FOR ELECTRONIC DEVICES . . . . . . . . .
. . . . . . . . . . . . . . . 55 2.4.2 SILICON CARBIDE SUBSTRATES . . .
. . . . . . . . . . . . . . . . . . . . . 56 XII CONTENTS 2.4.3 SAPPHIRE
SUBSTRATES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
2.4.4 SILICON SUBSTRATES . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 62 2.4.5 GAN AND ALN SUBSTRATES . . . . . . . . . . . . .
. . . . . . . . . . . . 62 2.5 STATE-OF-THE-ART OF DEVICES AND CIRCUITS
. . . . . . . . . . . . . . . . . . 65 2.5.1 NITRIDE-BASED DIODES . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 65 2.5.2 POWER
ELECTRONICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 66 2.5.3 RF-METAL SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MESFETS) . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
2.5.4 METAL INSULATOR SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MISFETS) .
. . . . . . . . . . . . . . . . . . . . . . . . . 70 2.5.5 HIGH-ELECTRON
MOBILITY TRANSISTORS (HEMTS) . . . . . . . 71 2.5.6 HETEROJUNCTION
BIPOLAR TRANSISTORS (HBTS) . . . . . . . . . 84 2.5.7 MMIC HEMT
TECHNOLOGY . . . . . . . . . . . . . . . . . . . . . . . . 86 2.6
APPLICATIONS ISSUES . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 87 2.6.1 BROADBAND COMMUNICATION . . . . . . . . . .
. . . . . . . . . . . . . 88 2.6.2 RADAR COMPONENTS . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 88 2.6.3 ELECTRONICS IN HARSH
ENVIRONMENTS . . . . . . . . . . . . . . . . 89 2.7 PROBLEMS . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 90 3 EPITAXY FOR III-N-BASED ELECTRONIC DEVICES . . . . . . . . .
. . . . . 91 3.1 THE ALGAN/GAN MATERIAL SYSTEM . . . . . . . . . . . . .
. . . . . . . . . . 92 3.1.1 METAL ORGANIC CHEMICAL VAPOR DEPOSITION
(MOCVD) . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 3.1.2
MOLECULAR BEAM EPITAXY (MBE) . . . . . . . . . . . . . . . . . . 112
3.1.3 MOCVD AND MBE GROWTH ON ALTERNATIVE SUBSTRATES . . . . . . . . . .
. . . . . . . . . . . . . . 121 3.1.4 EPITAXIAL LATERAL OVERGROWTH (ELO)
. . . . . . . . . . . . . . . 122 3.1.5 HYDRIDE VAPOR PHASE EPITAXY
(HVPE). . . . . . . . . . . . . 122 3.2 INDIUM-BASED COMPOUNDS AND
HETEROSTRUCTURES . . . . . . . . . . . 123 3.2.1 MOCVD GROWTH OF
INDIUM-BASED LAYERS . . . . . . . . . . 124 3.2.2 MBE GROWTH OF
INDIUM-BASED LAYERS. . . . . . . . . . . . . . 125 3.2.3 INDIUM-BASED
HETEROSTRUCTURE GROWTH . . . . . . . . . . . . . 126 3.3 DOPING AND
DEFECTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . 127 3.3.1 MOCVD GROWTH . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 128 3.3.2 MBE GROWTH . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 130 3.4 EPITAXIAL DEVICE DESIGN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
3.4.1 GEOMETRICAL CONSIDERATIONS . . . . . . . . . . . . . . . . . . . .
. . . 131 3.4.2 GROWTH OF CAP LAYERS . . . . . . . . . . . . . . . . . .
. . . . . . . . . 133 3.4.3 DOPING . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 134 3.4.4 ALN INTERLAYER . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
3.4.5 CHANNEL CONCEPTS . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 137 3.4.6 EPITAXIAL IN-SITU DEVICE PASSIVATION . . . . . . .
. . . . . . . . 137 3.5 PROBLEMS . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 138 CONTENTS XIII 4
DEVICE PROCESSING TECHNOLOGY . . . . . . . . . . . . . . . . . . . . . .
. . . . . 139 4.1 PROCESSING ISSUES . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 139 4.2 DEVICE ISOLATION . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
142 4.2.1 MESA STRUCTURES . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 143 4.2.2 ION IMPLANTATION FOR ISOLATION . . . . . .
. . . . . . . . . . . . . . . 143 4.3 CONTACT FORMATION . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 144 4.3.1 OHMIC
CONTACTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 144 4.3.2 SCHOTTKY CONTACTS . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 151 4.4 LITHOGRAPHY . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . 157 4.4.1 OPTICAL
LITHOGRAPHY . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
157 4.4.2 ELECTRON BEAM LITHOGRAPHY. . . . . . . . . . . . . . . . . . .
. . . . 158 4.4.3 FIELD PLATES AND GATE EXTENSIONS. . . . . . . . . . .
. . . . . . . 160 4.5 ETCHING AND RECESS PROCESSES . . . . . . . . . . .
. . . . . . . . . . . . . . . . 165 4.5.1 DRY ETCHING . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . 166 4.5.2 WET
ETCHING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . 169 4.5.3 RECESS PROCESSES . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . 170 4.6 SURFACE ENGINEERING AND DEVICE
PASSIVATION . . . . . . . . . . . . . . . 174 4.6.1 PASSIVATION OF THE
UNGATED DEVICE REGION . . . . . . . . . . 174 4.6.2 PHYSICAL TRAPPING
MECHANISMS . . . . . . . . . . . . . . . . . . . . 177 4.6.3 TRAP
CHARACTERIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . .
178 4.6.4 TECHNOLOGICAL MEASURES: SURFACE PREPARATION AND DIELECTRICS .
. . . . . . . . . . . . . . . 182 4.6.5 EPITAXIAL MEASURES: SURFACE
PREPARATION AND DIELECTRICS . . . . . . . . . . . . . . . . 188 4.7 GATE
DIELECTRICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . 189 4.8 PROCESSING FOR HIGH-TEMPERATURE OPERATION . .
. . . . . . . . . . . . 191 4.9 BACKSIDE PROCESSING . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 192 4.9.1 THINNING
TECHNOLOGIES . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
4.9.2 VIAHOLE ETCHING AND DRILLING TECHNOLOGIES . . . . . . . . . . 193
4.9.3 VIAHOLE METALLIZATION . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 195 4.10 PROBLEMS . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . 196 5 DEVICE
CHARACTERIZATION AND MODELING . . . . . . . . . . . . . . . . . . . 197
5.1 DEVICE CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 197 5.1.1 COMPACT FET ANALYSIS . . . . . . . . . . .
. . . . . . . . . . . . . . . 197 5.1.2 COMPACT BIPOLAR ANALYSIS . . . .
. . . . . . . . . . . . . . . . . . . . 209 5.2 FREQUENCY DISPERSION . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211
5.2.1 DISPERSION EFFECTS AND CHARACTERIZATION . . . . . . . . . . . .
211 5.2.2 DISPERSION CHARACTERIZATION AND ANALYSIS . . . . . . . . . . .
214 5.2.3 MODELS FOR FREQUENCY DISPERSION IN DEVICES . . . . . . . . .
217 5.2.4 SUPPRESSION OF FREQUENCY DISPERSION . . . . . . . . . . . . .
. . 220 5.3 SMALL-SIGNAL CHARACTERIZATION, ANALYSIS, AND MODELING . . .
. . 220 5.3.1 RF-CHARACTERIZATION AND INVARIANTS . . . . . . . . . . . .
. . . . 220 5.3.2 COMMON-SOURCE HEMTS . . . . . . . . . . . . . . . . .
. . . . . . . . 222 5.3.3 DUAL-GATE HEMTS . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 227 XIV CONTENTS 5.3.4 PULSED-DC- AND
RF-CHARACTERISTICS . . . . . . . . . . . . . . . . 227 5.3.5
SMALL-SIGNAL MODELING . . . . . . . . . . . . . . . . . . . . . . . . .
. . 230 5.4 LARGE-SIGNAL ANALYSIS AND MODELING . . . . . . . . . . . . .
. . . . . . . . 235 5.4.1 LARGE-SIGNAL CHARACTERIZATION AND LOADPULL
RESULTS . 235 5.4.2 LARGE-SIGNAL MODELING . . . . . . . . . . . . . . .
. . . . . . . . . . . . 241 5.5 LINEARITY ANALYSIS AND MODELING . . . .
. . . . . . . . . . . . . . . . . . . . 255 5.5.1 BASIC UNDERSTANDING .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 256 5.5.2
NITRIDE-SPECIFIC LINEARITY ANALYSIS . . . . . . . . . . . . . . . . .
259 5.6 NOISE ANALYSIS . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 262 5.6.1 LOW-FREQUENCY NOISE . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 262 5.6.2 RF-NOISE ANALYSIS
AND CHARACTERIZATION. . . . . . . . . . . . 265 5.7 PROBLEMS . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 270 6 CIRCUIT CONSIDERATIONS AND III-N EXAMPLES . . . . . . . . .
. . . . . 271 6.1 PASSIVE CIRCUIT MODELING . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . 271 6.1.1 COPLANAR-WAVEGUIDE
TRANSMISSION-LINE ELEMENTS . . . . 271 6.1.2
MICROSTRIP-TRANSMISSION-LINE ELEMENTS . . . . . . . . . . . . . 273 6.2
HIGH-VOLTAGE HIGH-POWER AMPLIFIERS . . . . . . . . . . . . . . . . . . .
. . 274 6.2.1 BASIC PRINCIPLES OF HIGH-VOLTAGE HIGH-POWER OPERATION . .
. . . . . . . . . . . . . . . . . . . . . . . . . 274 6.2.2 GENERAL
DESIGN CONSIDERATIONS OF III-N AMPLIFIERS . . . 278 6.2.3 MOBILE
COMMUNICATION AMPLIFIERS BETWEEN 500 MHZ AND 6 GHZ . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . 279 6.2.4 C-FREQUENCY BAND
HIGH-POWER AMPLIFIERS . . . . . . . . . . 285 6.2.5 X-BAND HIGH-POWER
AMPLIFIERS . . . . . . . . . . . . . . . . . . . . 287 6.2.6 DESIGN,
IMPEDANCE LEVELS, AND MATCHING NETWORKS . . 294 6.2.7 BROADBAND GAN
HIGHLY LINEAR AMPLIFIERS . . . . . . . . . . 297 6.2.8 GAN MM-WAVE POWER
AMPLIFIERS . . . . . . . . . . . . . . . . . . 298 6.3 ROBUST GAN
LOW-NOISE AMPLIFIERS . . . . . . . . . . . . . . . . . . . . . . . 300
6.3.1 STATE-OF-THE-ART OF GAN LOW-NOISE AMPLIFIERS. . . . . . . 300
6.3.2 EXAMPLES OF GAN MMIC LNAS . . . . . . . . . . . . . . . . . . .
301 6.4 OSCILLATORS, MIXERS, AND ATTENUATORS . . . . . . . . . . . . . .
. . . . . . . 304 6.4.1 OSCILLATORS . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 307 6.4.2 GAN HEMT MIXER
CIRCUITS . . . . . . . . . . . . . . . . . . . . . . . 307 6.4.3
ATTENUATORS AND SWITCHES . . . . . . . . . . . . . . . . . . . . . . . .
308 6.5 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 309 7 RELIABILITY ASPECTS AND
HIGH-TEMPERATURE OPERATION . . . . 311 7.1 AN OVERVIEW OF DEVICE TESTING
AND OF FAILURE MECHANISMS. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 311 7.1.1 DESCRIPTION OF DEVICE DEGRADATION . . . . . . . .
. . . . . . . . . 311 7.1.2 DEGRADATION MECHANISMS IN III-N FETS . . . .
. . . . . . . . 314 7.1.3 III-V HBT DEVICE DEGRADATION. . . . . . . . .
. . . . . . . . . . . 316 7.2 ANALYSIS OF NITRIDE-SPECIFIC DEGRADATION
MECHANISMS. . . . . . . 317 7.2.1 DC-DEGRADATION. . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 318 7.2.2 RF-DEGRADATION . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 322 CONTENTS
XV 7.3 FAILURE ANALYSIS . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 324 7.3.1 FAILURE MECHANISMS . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . 325 7.3.2 RELIABILITY CASE
STUDIES . . . . . . . . . . . . . . . . . . . . . . . . . . 327 7.4
RADIATION EFFECTS . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 331 7.5 HIGH-TEMPERATURE OPERATION . . . . . . . .
. . . . . . . . . . . . . . . . . . . 332 7.6 PROBLEMS . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
336 8 INTEGRATION, THERMAL MANAGEMENT, AND PACKAGING . . . . . . . 337
8.1 PASSIVE MMIC TECHNOLOGIES . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 337 8.1.1 PASSIVE ELEMENT TECHNOLOGIES . . . . . . . . . .
. . . . . . . . . . . 337 8.1.2 MICROSTRIP BACKEND TECHNOLOGY . . . . .
. . . . . . . . . . . . . . 340 8.2 INTEGRATION ISSUES. . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 341 8.3
THERMAL MANAGEMENT . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 343 8.3.1 THERMAL ANALYSIS . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 343 8.3.2 THERMAL MATERIAL SELECTION AND
MODELING . . . . . . . . . . 345 8.3.3 BASIC THERMAL FINDINGS, HEAT
SOURCES, AND THERMAL RESISTANCES . . . . . . . . . . . . . . . . . . . .
. . . . . 349 8.3.4 BACKSIDE COOLING . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . 352 8.3.5 FLIP-CHIP INTEGRATION . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 355 8.3.6 DYNAMIC THERMAL
EFFECTS . . . . . . . . . . . . . . . . . . . . . . . . 357 8.4 DEVICE
AND MMIC PACKAGING . . . . . . . . . . . . . . . . . . . . . . . . . . .
358 8.4.1 DICING . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . 358 8.4.2 DIE-ATTACH . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . 359 8.4.3 PACKAGE
TECHNOLOGY SELECTION . . . . . . . . . . . . . . . . . . . . . 361 8.4.4
THERMAL MANAGEMENT FOR LINEAR APPLICATIONS . . . . . . . 363 8.4.5
ACTIVE COOLING . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . 365 8.5 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 366 9 OUTLOOK . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 367 APPENDIX . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 369 REFERENCES
OF CHAPTER 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 371 REFERENCES OF CHAPTER 3 . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 395 REFERENCES OF CHAPTER 4
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 405 REFERENCES OF CHAPTER 5 . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . 419 REFERENCES OF CHAPTER 6 . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 429
REFERENCES OF CHAPTER 7 . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . 439 REFERENCES OF CHAPTER 8 . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 447 INDEX . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 455 |
| adam_txt |
CONTENTS LIST OF SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . XVII LIST OF ACRONYMS . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . XXV 1 INTRODUCTION 2 III-N MATERIALS, AND THE STATE-OF-THE-ART
OF DEVICES AND CIRCUITS . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 3 2.1 STATE-OF-THE-ART OF
MATERIALS RESEARCH . . . . . . . . . . . . . . . . . . . 3 2.1.2
MATERIAL LIMITATIONS . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 20 2.1.3 THERMAL PROPERTIES AND LIMITATIONS . . . . . . . . . . .
. . . . 21 2.1.4 TERNARY AND QUATERNARY III-N MATERIALS . . . . . . . .
. . . 23 2.2.1 SPONTANEOUS POLARIZATION . . . . . . . . . . . . . . . .
. . . . . . . . . 28 2.2.2 PIEZOELECTRIC POLARIZATION . . . . . . . . .
. . . . . . . . . . . . . . . . 30 2.2.3 DEVICE DESIGN USING
POLARIZATION-INDUCED CHARGES . . 32 2.2.4 ANALYTICAL CALCULATION OF
CHANNEL CHARGE CONCENTRATIONS . . . . . . . . . . . . . . . . . 38 2.2.5
DOPING ISSUES . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 38 2.2.6 SURFACES AND INTERFACES . . . . . . . . . . . . . .
. . . . . . . . . . . . . 40 2.2.7 TRANSPORT PROPERTIES IN POLARIZED
SEMICONDUCTORS . . . 46 2.2.8 POLARIZATION-BASED DEVICES AND THEIR
SPECIFIC PROPERTIES . . . . . . . . . . . . . . . . . . . . . 48 2.3
ELECTRICAL AND THERMAL LIMITATIONS OF MATERIALS AND DEVICES 48 2.3.1
PHYSICAL MODELING OF DEVICES . . . . . . . . . . . . . . . . . . . . .
49 2.3.2 DEVICES: FIGURES-OF-MERIT . . . . . . . . . . . . . . . . . . .
. . . . . . 51 2.3.3 III-N DEVICES: FREQUENCY DISPERSION . . . . . . . .
. . . . . . . 52 2.4 SUBSTRATES FOR ELECTRONIC DEVICES . . . . . . . . .
. . . . . . . . . . . . . . . 55 2.4.2 SILICON CARBIDE SUBSTRATES . . .
. . . . . . . . . . . . . . . . . . . . . 56 XII CONTENTS 2.4.3 SAPPHIRE
SUBSTRATES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
2.4.4 SILICON SUBSTRATES . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 62 2.4.5 GAN AND ALN SUBSTRATES . . . . . . . . . . . . .
. . . . . . . . . . . . 62 2.5 STATE-OF-THE-ART OF DEVICES AND CIRCUITS
. . . . . . . . . . . . . . . . . . 65 2.5.1 NITRIDE-BASED DIODES . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 65 2.5.2 POWER
ELECTRONICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 66 2.5.3 RF-METAL SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MESFETS) . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
2.5.4 METAL INSULATOR SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MISFETS) .
. . . . . . . . . . . . . . . . . . . . . . . . . 70 2.5.5 HIGH-ELECTRON
MOBILITY TRANSISTORS (HEMTS) . . . . . . . 71 2.5.6 HETEROJUNCTION
BIPOLAR TRANSISTORS (HBTS) . . . . . . . . . 84 2.5.7 MMIC HEMT
TECHNOLOGY . . . . . . . . . . . . . . . . . . . . . . . . 86 2.6
APPLICATIONS ISSUES . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 87 2.6.1 BROADBAND COMMUNICATION . . . . . . . . . .
. . . . . . . . . . . . . 88 2.6.2 RADAR COMPONENTS . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 88 2.6.3 ELECTRONICS IN HARSH
ENVIRONMENTS . . . . . . . . . . . . . . . . 89 2.7 PROBLEMS . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 90 3 EPITAXY FOR III-N-BASED ELECTRONIC DEVICES . . . . . . . . .
. . . . . 91 3.1 THE ALGAN/GAN MATERIAL SYSTEM . . . . . . . . . . . . .
. . . . . . . . . . 92 3.1.1 METAL ORGANIC CHEMICAL VAPOR DEPOSITION
(MOCVD) . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 3.1.2
MOLECULAR BEAM EPITAXY (MBE) . . . . . . . . . . . . . . . . . . 112
3.1.3 MOCVD AND MBE GROWTH ON ALTERNATIVE SUBSTRATES . . . . . . . . . .
. . . . . . . . . . . . . . 121 3.1.4 EPITAXIAL LATERAL OVERGROWTH (ELO)
. . . . . . . . . . . . . . . 122 3.1.5 HYDRIDE VAPOR PHASE EPITAXY
(HVPE). . . . . . . . . . . . . 122 3.2 INDIUM-BASED COMPOUNDS AND
HETEROSTRUCTURES . . . . . . . . . . . 123 3.2.1 MOCVD GROWTH OF
INDIUM-BASED LAYERS . . . . . . . . . . 124 3.2.2 MBE GROWTH OF
INDIUM-BASED LAYERS. . . . . . . . . . . . . . 125 3.2.3 INDIUM-BASED
HETEROSTRUCTURE GROWTH . . . . . . . . . . . . . 126 3.3 DOPING AND
DEFECTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . 127 3.3.1 MOCVD GROWTH . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 128 3.3.2 MBE GROWTH . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 130 3.4 EPITAXIAL DEVICE DESIGN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
3.4.1 GEOMETRICAL CONSIDERATIONS . . . . . . . . . . . . . . . . . . . .
. . . 131 3.4.2 GROWTH OF CAP LAYERS . . . . . . . . . . . . . . . . . .
. . . . . . . . . 133 3.4.3 DOPING . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 134 3.4.4 ALN INTERLAYER . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
3.4.5 CHANNEL CONCEPTS . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 137 3.4.6 EPITAXIAL IN-SITU DEVICE PASSIVATION . . . . . . .
. . . . . . . . 137 3.5 PROBLEMS . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 138 CONTENTS XIII 4
DEVICE PROCESSING TECHNOLOGY . . . . . . . . . . . . . . . . . . . . . .
. . . . . 139 4.1 PROCESSING ISSUES . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 139 4.2 DEVICE ISOLATION . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
142 4.2.1 MESA STRUCTURES . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 143 4.2.2 ION IMPLANTATION FOR ISOLATION . . . . . .
. . . . . . . . . . . . . . . 143 4.3 CONTACT FORMATION . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 144 4.3.1 OHMIC
CONTACTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 144 4.3.2 SCHOTTKY CONTACTS . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 151 4.4 LITHOGRAPHY . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . 157 4.4.1 OPTICAL
LITHOGRAPHY . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
157 4.4.2 ELECTRON BEAM LITHOGRAPHY. . . . . . . . . . . . . . . . . . .
. . . . 158 4.4.3 FIELD PLATES AND GATE EXTENSIONS. . . . . . . . . . .
. . . . . . . 160 4.5 ETCHING AND RECESS PROCESSES . . . . . . . . . . .
. . . . . . . . . . . . . . . . 165 4.5.1 DRY ETCHING . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . 166 4.5.2 WET
ETCHING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . 169 4.5.3 RECESS PROCESSES . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . 170 4.6 SURFACE ENGINEERING AND DEVICE
PASSIVATION . . . . . . . . . . . . . . . 174 4.6.1 PASSIVATION OF THE
UNGATED DEVICE REGION . . . . . . . . . . 174 4.6.2 PHYSICAL TRAPPING
MECHANISMS . . . . . . . . . . . . . . . . . . . . 177 4.6.3 TRAP
CHARACTERIZATION . . . . . . . . . . . . . . . . . . . . . . . . . . .
178 4.6.4 TECHNOLOGICAL MEASURES: SURFACE PREPARATION AND DIELECTRICS .
. . . . . . . . . . . . . . . 182 4.6.5 EPITAXIAL MEASURES: SURFACE
PREPARATION AND DIELECTRICS . . . . . . . . . . . . . . . . 188 4.7 GATE
DIELECTRICS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . 189 4.8 PROCESSING FOR HIGH-TEMPERATURE OPERATION . .
. . . . . . . . . . . . 191 4.9 BACKSIDE PROCESSING . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 192 4.9.1 THINNING
TECHNOLOGIES . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
4.9.2 VIAHOLE ETCHING AND DRILLING TECHNOLOGIES . . . . . . . . . . 193
4.9.3 VIAHOLE METALLIZATION . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 195 4.10 PROBLEMS . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . 196 5 DEVICE
CHARACTERIZATION AND MODELING . . . . . . . . . . . . . . . . . . . 197
5.1 DEVICE CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . 197 5.1.1 COMPACT FET ANALYSIS . . . . . . . . . . .
. . . . . . . . . . . . . . . 197 5.1.2 COMPACT BIPOLAR ANALYSIS . . . .
. . . . . . . . . . . . . . . . . . . . 209 5.2 FREQUENCY DISPERSION . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211
5.2.1 DISPERSION EFFECTS AND CHARACTERIZATION . . . . . . . . . . . .
211 5.2.2 DISPERSION CHARACTERIZATION AND ANALYSIS . . . . . . . . . . .
214 5.2.3 MODELS FOR FREQUENCY DISPERSION IN DEVICES . . . . . . . . .
217 5.2.4 SUPPRESSION OF FREQUENCY DISPERSION . . . . . . . . . . . . .
. . 220 5.3 SMALL-SIGNAL CHARACTERIZATION, ANALYSIS, AND MODELING . . .
. . 220 5.3.1 RF-CHARACTERIZATION AND INVARIANTS . . . . . . . . . . . .
. . . . 220 5.3.2 COMMON-SOURCE HEMTS . . . . . . . . . . . . . . . . .
. . . . . . . . 222 5.3.3 DUAL-GATE HEMTS . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 227 XIV CONTENTS 5.3.4 PULSED-DC- AND
RF-CHARACTERISTICS . . . . . . . . . . . . . . . . 227 5.3.5
SMALL-SIGNAL MODELING . . . . . . . . . . . . . . . . . . . . . . . . .
. . 230 5.4 LARGE-SIGNAL ANALYSIS AND MODELING . . . . . . . . . . . . .
. . . . . . . . 235 5.4.1 LARGE-SIGNAL CHARACTERIZATION AND LOADPULL
RESULTS . 235 5.4.2 LARGE-SIGNAL MODELING . . . . . . . . . . . . . . .
. . . . . . . . . . . . 241 5.5 LINEARITY ANALYSIS AND MODELING . . . .
. . . . . . . . . . . . . . . . . . . . 255 5.5.1 BASIC UNDERSTANDING .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 256 5.5.2
NITRIDE-SPECIFIC LINEARITY ANALYSIS . . . . . . . . . . . . . . . . .
259 5.6 NOISE ANALYSIS . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 262 5.6.1 LOW-FREQUENCY NOISE . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 262 5.6.2 RF-NOISE ANALYSIS
AND CHARACTERIZATION. . . . . . . . . . . . 265 5.7 PROBLEMS . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . 270 6 CIRCUIT CONSIDERATIONS AND III-N EXAMPLES . . . . . . . . .
. . . . . 271 6.1 PASSIVE CIRCUIT MODELING . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . 271 6.1.1 COPLANAR-WAVEGUIDE
TRANSMISSION-LINE ELEMENTS . . . . 271 6.1.2
MICROSTRIP-TRANSMISSION-LINE ELEMENTS . . . . . . . . . . . . . 273 6.2
HIGH-VOLTAGE HIGH-POWER AMPLIFIERS . . . . . . . . . . . . . . . . . . .
. . 274 6.2.1 BASIC PRINCIPLES OF HIGH-VOLTAGE HIGH-POWER OPERATION . .
. . . . . . . . . . . . . . . . . . . . . . . . . 274 6.2.2 GENERAL
DESIGN CONSIDERATIONS OF III-N AMPLIFIERS . . . 278 6.2.3 MOBILE
COMMUNICATION AMPLIFIERS BETWEEN 500 MHZ AND 6 GHZ . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . 279 6.2.4 C-FREQUENCY BAND
HIGH-POWER AMPLIFIERS . . . . . . . . . . 285 6.2.5 X-BAND HIGH-POWER
AMPLIFIERS . . . . . . . . . . . . . . . . . . . . 287 6.2.6 DESIGN,
IMPEDANCE LEVELS, AND MATCHING NETWORKS . . 294 6.2.7 BROADBAND GAN
HIGHLY LINEAR AMPLIFIERS . . . . . . . . . . 297 6.2.8 GAN MM-WAVE POWER
AMPLIFIERS . . . . . . . . . . . . . . . . . . 298 6.3 ROBUST GAN
LOW-NOISE AMPLIFIERS . . . . . . . . . . . . . . . . . . . . . . . 300
6.3.1 STATE-OF-THE-ART OF GAN LOW-NOISE AMPLIFIERS. . . . . . . 300
6.3.2 EXAMPLES OF GAN MMIC LNAS . . . . . . . . . . . . . . . . . . .
301 6.4 OSCILLATORS, MIXERS, AND ATTENUATORS . . . . . . . . . . . . . .
. . . . . . . 304 6.4.1 OSCILLATORS . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . 307 6.4.2 GAN HEMT MIXER
CIRCUITS . . . . . . . . . . . . . . . . . . . . . . . 307 6.4.3
ATTENUATORS AND SWITCHES . . . . . . . . . . . . . . . . . . . . . . . .
308 6.5 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 309 7 RELIABILITY ASPECTS AND
HIGH-TEMPERATURE OPERATION . . . . 311 7.1 AN OVERVIEW OF DEVICE TESTING
AND OF FAILURE MECHANISMS. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 311 7.1.1 DESCRIPTION OF DEVICE DEGRADATION . . . . . . . .
. . . . . . . . . 311 7.1.2 DEGRADATION MECHANISMS IN III-N FETS . . . .
. . . . . . . . 314 7.1.3 III-V HBT DEVICE DEGRADATION. . . . . . . . .
. . . . . . . . . . . 316 7.2 ANALYSIS OF NITRIDE-SPECIFIC DEGRADATION
MECHANISMS. . . . . . . 317 7.2.1 DC-DEGRADATION. . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 318 7.2.2 RF-DEGRADATION . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 322 CONTENTS
XV 7.3 FAILURE ANALYSIS . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 324 7.3.1 FAILURE MECHANISMS . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . 325 7.3.2 RELIABILITY CASE
STUDIES . . . . . . . . . . . . . . . . . . . . . . . . . . 327 7.4
RADIATION EFFECTS . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . 331 7.5 HIGH-TEMPERATURE OPERATION . . . . . . . .
. . . . . . . . . . . . . . . . . . . 332 7.6 PROBLEMS . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
336 8 INTEGRATION, THERMAL MANAGEMENT, AND PACKAGING . . . . . . . 337
8.1 PASSIVE MMIC TECHNOLOGIES . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 337 8.1.1 PASSIVE ELEMENT TECHNOLOGIES . . . . . . . . . .
. . . . . . . . . . . 337 8.1.2 MICROSTRIP BACKEND TECHNOLOGY . . . . .
. . . . . . . . . . . . . . 340 8.2 INTEGRATION ISSUES. . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 341 8.3
THERMAL MANAGEMENT . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 343 8.3.1 THERMAL ANALYSIS . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . 343 8.3.2 THERMAL MATERIAL SELECTION AND
MODELING . . . . . . . . . . 345 8.3.3 BASIC THERMAL FINDINGS, HEAT
SOURCES, AND THERMAL RESISTANCES . . . . . . . . . . . . . . . . . . . .
. . . . . 349 8.3.4 BACKSIDE COOLING . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . 352 8.3.5 FLIP-CHIP INTEGRATION . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 355 8.3.6 DYNAMIC THERMAL
EFFECTS . . . . . . . . . . . . . . . . . . . . . . . . 357 8.4 DEVICE
AND MMIC PACKAGING . . . . . . . . . . . . . . . . . . . . . . . . . . .
358 8.4.1 DICING . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . 358 8.4.2 DIE-ATTACH . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . 359 8.4.3 PACKAGE
TECHNOLOGY SELECTION . . . . . . . . . . . . . . . . . . . . . 361 8.4.4
THERMAL MANAGEMENT FOR LINEAR APPLICATIONS . . . . . . . 363 8.4.5
ACTIVE COOLING . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . 365 8.5 PROBLEMS . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 366 9 OUTLOOK . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . 367 APPENDIX . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 369 REFERENCES
OF CHAPTER 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . 371 REFERENCES OF CHAPTER 3 . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . 395 REFERENCES OF CHAPTER 4
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. 405 REFERENCES OF CHAPTER 5 . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . 419 REFERENCES OF CHAPTER 6 . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 429
REFERENCES OF CHAPTER 7 . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . 439 REFERENCES OF CHAPTER 8 . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 447 INDEX . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 455 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Quay, Rüdiger 1971- |
| author_GND | (DE-588)123732123 |
| author_facet | Quay, Rüdiger 1971- |
| author_role | aut |
| author_sort | Quay, Rüdiger 1971- |
| author_variant | r q rq |
| building | Verbundindex |
| bvnumber | BV022966967 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.15.G33 |
| callnumber-search | TK7871.15.G33 |
| callnumber-sort | TK 47871.15 G33 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 3100 UQ 1100 ZN 3460 |
| classification_tum | ELT 300f PHY 693f ELT 490f |
| ctrlnum | (OCoLC)237019934 (DE-599)BVBBV022966967 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV022966967 |
| illustrated | Illustrated |
| index_date | 2024-07-02T19:07:02Z |
| indexdate | 2024-07-20T09:27:05Z |
| institution | BVB |
| isbn | 9783540718901 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016171272 |
| oclc_num | 237019934 |
| open_access_boolean | |
| owner | DE-703 DE-634 DE-83 DE-1043 DE-11 DE-91G DE-BY-TUM |
| owner_facet | DE-703 DE-634 DE-83 DE-1043 DE-11 DE-91G DE-BY-TUM |
| physical | XXIX, 469 S. Ill., graph. Darst. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in materials science |
| series2 | Springer series in materials science |
| spelling | Quay, Rüdiger 1971- Verfasser (DE-588)123732123 aut Gallium nitride electronics Rüdiger Quay Berlin [u.a.] Springer 2008 XXIX, 469 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 96 Gallium nitride Semiconductors Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Verbindungstechnik (DE-588)4129183-9 gnd rswk-swf Integration Mikroelektronik (DE-588)4218840-4 gnd rswk-swf Stoffeigenschaft (DE-588)4192147-1 gnd rswk-swf Borgruppennitride (DE-588)4590273-2 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 s Borgruppennitride (DE-588)4590273-2 s Stoffeigenschaft (DE-588)4192147-1 s Integration Mikroelektronik (DE-588)4218840-4 s Verbindungstechnik (DE-588)4129183-9 s DE-604 Drei-Fünf-Halbleiter (DE-588)4150649-2 s Nitride (DE-588)4171929-3 s Erscheint auch als Online-Ausgabe 978-3-540-71892-5 Springer series in materials science 96 (DE-604)BV000683335 96 http://deposit.dnb.de/cgi-bin/dokserv?id=3094889&prov=M&dok_var=1&dok_ext=htm Beschreibung für Leser http://www.gbv.de/dms/ilmenau/toc/54336044X.PDF Inhaltsverzeichnis SWB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016171272&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Quay, Rüdiger 1971- Gallium nitride electronics Springer series in materials science Gallium nitride Semiconductors Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Verbindungstechnik (DE-588)4129183-9 gnd Integration Mikroelektronik (DE-588)4218840-4 gnd Stoffeigenschaft (DE-588)4192147-1 gnd Borgruppennitride (DE-588)4590273-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Nitride (DE-588)4171929-3 gnd |
| subject_GND | (DE-588)4150649-2 (DE-588)4129183-9 (DE-588)4218840-4 (DE-588)4192147-1 (DE-588)4590273-2 (DE-588)4113826-0 (DE-588)4171929-3 |
| title | Gallium nitride electronics |
| title_auth | Gallium nitride electronics |
| title_exact_search | Gallium nitride electronics |
| title_exact_search_txtP | Gallium nitride electronics |
| title_full | Gallium nitride electronics Rüdiger Quay |
| title_fullStr | Gallium nitride electronics Rüdiger Quay |
| title_full_unstemmed | Gallium nitride electronics Rüdiger Quay |
| title_short | Gallium nitride electronics |
| title_sort | gallium nitride electronics |
| topic | Gallium nitride Semiconductors Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Verbindungstechnik (DE-588)4129183-9 gnd Integration Mikroelektronik (DE-588)4218840-4 gnd Stoffeigenschaft (DE-588)4192147-1 gnd Borgruppennitride (DE-588)4590273-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Nitride (DE-588)4171929-3 gnd |
| topic_facet | Gallium nitride Semiconductors Drei-Fünf-Halbleiter Verbindungstechnik Integration Mikroelektronik Stoffeigenschaft Borgruppennitride Halbleiterbauelement Nitride |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3094889&prov=M&dok_var=1&dok_ext=htm http://www.gbv.de/dms/ilmenau/toc/54336044X.PDF http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016171272&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000683335 |
| work_keys_str_mv | AT quayrudiger galliumnitrideelectronics |
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