III-nitride: semiconductor materials
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
London
Imperial College Press
2006
|
| Schlagworte: | |
| Beschreibung: | XII, 428 S. Ill., graph. Darst. |
| ISBN: | 1860946364 |
Internformat
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| 245 | 1 | 0 | |a III-nitride |b semiconductor materials |c ed. Zhe Chuan Feng |
| 264 | 1 | |a London |b Imperial College Press |c 2006 | |
| 300 | |a XII, 428 S. |b Ill., graph. Darst. | ||
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| 650 | 4 | |a Électronique - Matériaux | |
| 650 | 4 | |a Semiconductors |x Materials | |
| 650 | 4 | |a Nitrides | |
| 650 | 0 | 7 | |a Borgruppennitride |0 (DE-588)4590273-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Wide-bandgap Halbleiter |0 (DE-588)4273153-7 |2 gnd |9 rswk-swf |
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| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Feng, Zhe Chuan |e Sonstige |4 oth | |
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Datensatz im Suchindex
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| id | DE-604.BV022884909 |
| illustrated | Illustrated |
| index_date | 2024-07-02T18:51:38Z |
| indexdate | 2024-08-27T00:22:26Z |
| institution | BVB |
| isbn | 1860946364 |
| language | English |
| lccn | 2006299211 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016089829 |
| oclc_num | 70160598 |
| open_access_boolean | |
| owner | DE-703 DE-706 |
| owner_facet | DE-703 DE-706 |
| physical | XII, 428 S. Ill., graph. Darst. |
| publishDate | 2006 |
| publishDateSearch | 2006 |
| publishDateSort | 2006 |
| publisher | Imperial College Press |
| record_format | marc |
| spelling | III-nitride semiconductor materials ed. Zhe Chuan Feng London Imperial College Press 2006 XII, 428 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Dépôt en phase vapeur par organométalliques Nitrures - Propriétés électriques Semiconducteurs Électronique - Matériaux Semiconductors Materials Nitrides Borgruppennitride (DE-588)4590273-2 gnd rswk-swf Wide-bandgap Halbleiter (DE-588)4273153-7 gnd rswk-swf Borgruppennitride (DE-588)4590273-2 s Wide-bandgap Halbleiter (DE-588)4273153-7 s DE-604 Feng, Zhe Chuan Sonstige oth |
| spellingShingle | III-nitride semiconductor materials Dépôt en phase vapeur par organométalliques Nitrures - Propriétés électriques Semiconducteurs Électronique - Matériaux Semiconductors Materials Nitrides Borgruppennitride (DE-588)4590273-2 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| subject_GND | (DE-588)4590273-2 (DE-588)4273153-7 |
| title | III-nitride semiconductor materials |
| title_auth | III-nitride semiconductor materials |
| title_exact_search | III-nitride semiconductor materials |
| title_exact_search_txtP | III-nitride semiconductor materials |
| title_full | III-nitride semiconductor materials ed. Zhe Chuan Feng |
| title_fullStr | III-nitride semiconductor materials ed. Zhe Chuan Feng |
| title_full_unstemmed | III-nitride semiconductor materials ed. Zhe Chuan Feng |
| title_short | III-nitride |
| title_sort | iii nitride semiconductor materials |
| title_sub | semiconductor materials |
| topic | Dépôt en phase vapeur par organométalliques Nitrures - Propriétés électriques Semiconducteurs Électronique - Matériaux Semiconductors Materials Nitrides Borgruppennitride (DE-588)4590273-2 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| topic_facet | Dépôt en phase vapeur par organométalliques Nitrures - Propriétés électriques Semiconducteurs Électronique - Matériaux Semiconductors Materials Nitrides Borgruppennitride Wide-bandgap Halbleiter |
| work_keys_str_mv | AT fengzhechuan iiinitridesemiconductormaterials |