Field effect transistor based CMOS stress sensors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Tönning [u.a.]
Der andere Verl.
2006
|
| Schriftenreihe: | MEMS technology and engineering
2 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | IV, 211 S. Ill., graph. Darst. |
| ISBN: | 3899594584 |
Internformat
MARC
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Datensatz im Suchindex
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| adam_text | MICHAEL DOELLE FIELD EFFECT TRANSISTOR BASED CMOS STRESS SENSORS IMTEK,
UNIVERSITY OF FREIBURG MEMS TECHNOLOGY AND ENGINEERING VOLUME 2 CONTENTS
ABSTRACT 1 ZUSAMMENFASSUNG 3 1 INTRODUCTION 5 1.1 WELL-ESTABLISHED
APPLICATIONS FOR STRESS SENSORS 5 1.2 NOVEL APPLICATIONS FOR STRESS
SENSORS 5 1.3 SCOPE OF THIS THESIS 10 1.4 MAJOR RESULTS 12 1.5
REFERENCES 14 2 CMOS BASED STRESS SENSORS 19 2.1 OVERVIEW 19 2.2
PIEZORESISTANCE 21 2.3 THE PSEUDO-HALL EFFECT IN INVERSION LAYERS 27 2.4
WELL-ESTABLISHED CMOS STRESS SENSORS 33 2.5 LONGITUDINAL FET BASED CMOS
SENSORS 39 2.6 ADVANCED CMOS STRESS SENSORS 46 2.7 COMPARISON OF
SENSITIVITIES 48 2.8 REFERENCES 52 3 EXPERIMENTAL SETUPS 61 3.1
INTRODUCTION 61 3.2 FOUR-POINT BENDING BRIDGE 61 3.3 BONDER 65 3.4
MICROMECHANICAL MEMS PROBE STATION 66 3.5 HIGH TEMPERATURE SETUP 67 3.6
REFERENCES 70 4 NOVEL STRUCTURES AND OPERATION MODES 73 4.1 LAYOUT AND
FABRICATION 73 4.2 FOUR-CONTACT PIEZO-FETS 75 4.3 EIGHT-CONTACT
PIEZO-FETS 92 I 4.4 OFFSET COMPENSATION AND MULTI-STRESS EXTRACTION 94
4.5 MEASUREMENT OF OUT-OF-PLANE FORCES 102 4.6 REFERENCES 105 5
GEOMETRICAL CORRECTION FACTORS 107 5.1 INTRODUCTION 107 5.2 THEORY 108
5.3 SIMULATION METHOD 111 5.4 SIMULATION RESULTS 117 5.5 EXPERIMENTAL
VERIFICATION 128 5.6 DESIGN GUIDELINES 130 5.7 OUTLOOK 131 5.8
REFERENCES 132 6 TEMPERATURE MEASUREMENTS USING PIEZO-FETS 135 6.1
TEMPERATURE EFFECTS IN PIEZO-FETS 135 6.2 THEORY OF THRESHOLD VOLTAGE
EXTRACTION 139 6.3 MEASUREMENTS 146 6.4 OUTLOOK 154 6.5 REFERENCES 156 7
SMALL-SCALE HIGH-DENSITY STRESS SENSOR ARRAY 161 7.1 INTRODUCTION 161
7.2 TEST STRUCTURES 163 7.3 SENSOR SELECTION CONCEPT 164 7.4 ARRAY
TURN-ON CHARACTERISTICS 166 7.5 FE SIMULATIONS 166 7.6 MEASUREMENTS 169
7.7 REFERENCES 177 8 LARGE-SCALE HIGH-DENSITY STRESS SENSOR ARRAY 179
8.1 INTRODUCTION 179 8.2 IMPROVED ARRAY CONCEPT 181 8.3 1024 STRESS
SENSOR ARRAY 189 8.4 EXPERIMENTAL RESULTS 193 II 8.5 REFERENCES 196 9
CONCLUSION AND OUTLOOK 197 ABBREVIATIONS AND SYMBOLS 201 ACKNOWLEDGMENTS
207 CURRICULUM VITAE 209 PUBLICATIONS 210 IN
|
| adam_txt |
MICHAEL DOELLE FIELD EFFECT TRANSISTOR BASED CMOS STRESS SENSORS IMTEK,
UNIVERSITY OF FREIBURG MEMS TECHNOLOGY AND ENGINEERING VOLUME 2 CONTENTS
ABSTRACT 1 ZUSAMMENFASSUNG 3 1 INTRODUCTION 5 1.1 WELL-ESTABLISHED
APPLICATIONS FOR STRESS SENSORS 5 1.2 NOVEL APPLICATIONS FOR STRESS
SENSORS 5 1.3 SCOPE OF THIS THESIS 10 1.4 MAJOR RESULTS 12 1.5
REFERENCES 14 2 CMOS BASED STRESS SENSORS 19 2.1 OVERVIEW 19 2.2
PIEZORESISTANCE 21 2.3 THE PSEUDO-HALL EFFECT IN INVERSION LAYERS 27 2.4
WELL-ESTABLISHED CMOS STRESS SENSORS 33 2.5 LONGITUDINAL FET BASED CMOS
SENSORS 39 2.6 ADVANCED CMOS STRESS SENSORS 46 2.7 COMPARISON OF
SENSITIVITIES 48 2.8 REFERENCES 52 3 EXPERIMENTAL SETUPS 61 3.1
INTRODUCTION 61 3.2 FOUR-POINT BENDING BRIDGE 61 3.3 BONDER 65 3.4
MICROMECHANICAL MEMS PROBE STATION 66 3.5 HIGH TEMPERATURE SETUP 67 3.6
REFERENCES 70 4 NOVEL STRUCTURES AND OPERATION MODES 73 4.1 LAYOUT AND
FABRICATION 73 4.2 FOUR-CONTACT PIEZO-FETS 75 4.3 EIGHT-CONTACT
PIEZO-FETS 92 I 4.4 OFFSET COMPENSATION AND MULTI-STRESS EXTRACTION 94
4.5 MEASUREMENT OF OUT-OF-PLANE FORCES 102 4.6 REFERENCES 105 5
GEOMETRICAL CORRECTION FACTORS 107 5.1 INTRODUCTION 107 5.2 THEORY 108
5.3 SIMULATION METHOD 111 5.4 SIMULATION RESULTS 117 5.5 EXPERIMENTAL
VERIFICATION 128 5.6 DESIGN GUIDELINES 130 5.7 OUTLOOK 131 5.8
REFERENCES 132 6 TEMPERATURE MEASUREMENTS USING PIEZO-FETS 135 6.1
TEMPERATURE EFFECTS IN PIEZO-FETS 135 6.2 THEORY OF THRESHOLD VOLTAGE
EXTRACTION 139 6.3 MEASUREMENTS 146 6.4 OUTLOOK 154 6.5 REFERENCES 156 7
SMALL-SCALE HIGH-DENSITY STRESS SENSOR ARRAY 161 7.1 INTRODUCTION 161
7.2 TEST STRUCTURES 163 7.3 SENSOR SELECTION CONCEPT 164 7.4 ARRAY
TURN-ON CHARACTERISTICS 166 7.5 FE SIMULATIONS 166 7.6 MEASUREMENTS 169
7.7 REFERENCES 177 8 LARGE-SCALE HIGH-DENSITY STRESS SENSOR ARRAY 179
8.1 INTRODUCTION 179 8.2 IMPROVED ARRAY CONCEPT 181 8.3 1024 STRESS
SENSOR ARRAY 189 8.4 EXPERIMENTAL RESULTS 193 II 8.5 REFERENCES 196 9
CONCLUSION AND OUTLOOK 197 ABBREVIATIONS AND SYMBOLS 201 ACKNOWLEDGMENTS
207 CURRICULUM VITAE 209 PUBLICATIONS 210 IN |
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| discipline_str_mv | Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik |
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| index_date | 2024-07-02T18:50:35Z |
| indexdate | 2024-07-09T21:07:38Z |
| institution | BVB |
| isbn | 3899594584 |
| language | English |
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| physical | IV, 211 S. Ill., graph. Darst. |
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| spelling | Dölle, Michael 1977- Verfasser (DE-588)13182998X aut Field effect transistor based CMOS stress sensors Michael Dölle Tönning [u.a.] Der andere Verl. 2006 IV, 211 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier MEMS technology and engineering 2 Zugl.: Freiburg (Breisgau), Univ., Diss., 2006 Sensor (DE-588)4038824-4 gnd rswk-swf MEMS (DE-588)4824724-8 gnd rswk-swf CMOS (DE-588)4010319-5 gnd rswk-swf Piezoelektrizität (DE-588)4322722-3 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Mechanische Spannung (DE-588)4134428-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Sensor (DE-588)4038824-4 s Mechanische Spannung (DE-588)4134428-5 s Feldeffekttransistor (DE-588)4131472-4 s CMOS (DE-588)4010319-5 s MEMS (DE-588)4824724-8 s Piezoelektrizität (DE-588)4322722-3 s DE-604 MEMS technology and engineering 2 (DE-604)BV035420886 2 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016086105&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Dölle, Michael 1977- Field effect transistor based CMOS stress sensors MEMS technology and engineering Sensor (DE-588)4038824-4 gnd MEMS (DE-588)4824724-8 gnd CMOS (DE-588)4010319-5 gnd Piezoelektrizität (DE-588)4322722-3 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Mechanische Spannung (DE-588)4134428-5 gnd |
| subject_GND | (DE-588)4038824-4 (DE-588)4824724-8 (DE-588)4010319-5 (DE-588)4322722-3 (DE-588)4131472-4 (DE-588)4134428-5 (DE-588)4113937-9 |
| title | Field effect transistor based CMOS stress sensors |
| title_auth | Field effect transistor based CMOS stress sensors |
| title_exact_search | Field effect transistor based CMOS stress sensors |
| title_exact_search_txtP | Field effect transistor based CMOS stress sensors |
| title_full | Field effect transistor based CMOS stress sensors Michael Dölle |
| title_fullStr | Field effect transistor based CMOS stress sensors Michael Dölle |
| title_full_unstemmed | Field effect transistor based CMOS stress sensors Michael Dölle |
| title_short | Field effect transistor based CMOS stress sensors |
| title_sort | field effect transistor based cmos stress sensors |
| topic | Sensor (DE-588)4038824-4 gnd MEMS (DE-588)4824724-8 gnd CMOS (DE-588)4010319-5 gnd Piezoelektrizität (DE-588)4322722-3 gnd Feldeffekttransistor (DE-588)4131472-4 gnd Mechanische Spannung (DE-588)4134428-5 gnd |
| topic_facet | Sensor MEMS CMOS Piezoelektrizität Feldeffekttransistor Mechanische Spannung Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016086105&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV035420886 |
| work_keys_str_mv | AT dollemichael fieldeffecttransistorbasedcmosstresssensors |