Tran-Hoang-Hung. (2007). Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits. TUDpress.
Chicago-Zitierstil (17. Ausg.)Tran-Hoang-Hung. Physics Based Analytical Modeling of SiGe Heterojunction Bipolar Transistors for High Speed Integrated Circuits. Dresden: TUDpress, 2007.
MLA-Zitierstil (9. Ausg.)Tran-Hoang-Hung. Physics Based Analytical Modeling of SiGe Heterojunction Bipolar Transistors for High Speed Integrated Circuits. TUDpress, 2007.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.