Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Dresden
TUDpress
2007
|
| Schlagworte: | |
| Beschreibung: | XXI, 150 S. graph. Darst. 21 cm |
| ISBN: | 9783940046017 3940046019 |
Internformat
MARC
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| 003 | DE-604 | ||
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| 100 | 0 | |a Tran-Hoang-Hung |e Verfasser |0 (DE-588)132748401 |4 aut | |
| 245 | 1 | 0 | |a Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |c Tran Hoang Hung |
| 246 | 1 | |a Physics-based analytical modeling of SiGe heterojunction bipolar transistors for high-speed integrated circuits | |
| 264 | 1 | |a Dresden |b TUDpress |c 2007 | |
| 300 | |a XXI, 150 S. |b graph. Darst. |c 21 cm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Zugl.: Dresden, Techn. Univ., Diss., 2006 | ||
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| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Germanium |0 (DE-588)4135644-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Modell |0 (DE-588)4039798-1 |2 gnd |9 rswk-swf |
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Datensatz im Suchindex
| _version_ | 1804137007916515328 |
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| author | Tran-Hoang-Hung |
| author_GND | (DE-588)132748401 |
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| author_role | aut |
| author_sort | Tran-Hoang-Hung |
| author_variant | t h th |
| building | Verbundindex |
| bvnumber | BV022759574 |
| classification_rvk | ZN 4850 |
| ctrlnum | (OCoLC)635220435 (DE-599)DNB983439613 |
| dewey-full | 621.381528 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381528 |
| dewey-search | 621.381528 |
| dewey-sort | 3621.381528 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV022759574 |
| illustrated | Illustrated |
| index_date | 2024-07-02T18:33:55Z |
| indexdate | 2024-07-09T21:05:27Z |
| institution | BVB |
| isbn | 9783940046017 3940046019 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015965160 |
| oclc_num | 635220435 |
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| owner | DE-29T DE-83 |
| owner_facet | DE-29T DE-83 |
| physical | XXI, 150 S. graph. Darst. 21 cm |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | TUDpress |
| record_format | marc |
| spelling | Tran-Hoang-Hung Verfasser (DE-588)132748401 aut Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung Physics-based analytical modeling of SiGe heterojunction bipolar transistors for high-speed integrated circuits Dresden TUDpress 2007 XXI, 150 S. graph. Darst. 21 cm txt rdacontent n rdamedia nc rdacarrier Zugl.: Dresden, Techn. Univ., Diss., 2006 Heterobipolartransistor (DE-588)4254091-4 gnd rswk-swf Kleinsignalverhalten (DE-588)4164165-6 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Germanium (DE-588)4135644-5 gnd rswk-swf Modell (DE-588)4039798-1 gnd rswk-swf Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Germanium (DE-588)4135644-5 s Heterobipolartransistor (DE-588)4254091-4 s Kleinsignalverhalten (DE-588)4164165-6 s Physikalische Eigenschaft (DE-588)4134738-9 s Modell (DE-588)4039798-1 s DE-604 |
| spellingShingle | Tran-Hoang-Hung Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Heterobipolartransistor (DE-588)4254091-4 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Silicium (DE-588)4077445-4 gnd Germanium (DE-588)4135644-5 gnd Modell (DE-588)4039798-1 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd |
| subject_GND | (DE-588)4254091-4 (DE-588)4164165-6 (DE-588)4077445-4 (DE-588)4135644-5 (DE-588)4039798-1 (DE-588)4134738-9 (DE-588)4113937-9 |
| title | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_alt | Physics-based analytical modeling of SiGe heterojunction bipolar transistors for high-speed integrated circuits |
| title_auth | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_exact_search | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_exact_search_txtP | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_full | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung |
| title_fullStr | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung |
| title_full_unstemmed | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits Tran Hoang Hung |
| title_short | Physics based analytical modeling of SiGe heterojunction bipolar transistors for high speed integrated circuits |
| title_sort | physics based analytical modeling of sige heterojunction bipolar transistors for high speed integrated circuits |
| topic | Heterobipolartransistor (DE-588)4254091-4 gnd Kleinsignalverhalten (DE-588)4164165-6 gnd Silicium (DE-588)4077445-4 gnd Germanium (DE-588)4135644-5 gnd Modell (DE-588)4039798-1 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd |
| topic_facet | Heterobipolartransistor Kleinsignalverhalten Silicium Germanium Modell Physikalische Eigenschaft Hochschulschrift |
| work_keys_str_mv | AT tranhoanghung physicsbasedanalyticalmodelingofsigeheterojunctionbipolartransistorsforhighspeedintegratedcircuits |