Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
[2006]
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| Schlagworte: | |
| Online-Zugang: | http://d-nb.info/982288042/34 https://nbn-resolving.org/urn:nbn:de:bvb:706-1682 Volltext |
| Beschreibung: | 1 Online-Ressource |
Internformat
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| 100 | 1 | |a Capodieci, Vanessa |e Verfasser |0 (DE-588)131825763 |4 aut | |
| 245 | 1 | 0 | |a Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology |c von Vanessa Capodieci |
| 264 | 1 | |c [2006] | |
| 300 | |a 1 Online-Ressource | ||
| 336 | |b txt |2 rdacontent | ||
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| 502 | |a Neubiberg, Univ. der Bundeswehr München, Diss., 2005 | ||
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| 650 | 0 | 7 | |a Lanthanoxid |0 (DE-588)4441515-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Dielektrische Schicht |0 (DE-588)4194257-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Aluminiumoxide |0 (DE-588)4001590-7 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
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| 344 | |h ca. 5,3 MB | ||
Datensatz im Suchindex
| _version_ | 1804136495205842944 |
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| author | Capodieci, Vanessa |
| author_GND | (DE-588)131825763 |
| author_facet | Capodieci, Vanessa |
| author_role | aut |
| author_sort | Capodieci, Vanessa |
| author_variant | v c vc |
| building | Verbundindex |
| bvnumber | BV022424703 |
| classification_rvk | ZM 7680 |
| collection | ebook |
| ctrlnum | (OCoLC)182778362 (DE-599)DNB982288042 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik Werkstoffwissenschaften / Fertigungstechnik |
| discipline_str_mv | Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik Werkstoffwissenschaften / Fertigungstechnik |
| format | Thesis Electronic eBook |
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| indexdate | 2024-07-09T20:57:18Z |
| institution | BVB |
| language | English |
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| spelling | Capodieci, Vanessa Verfasser (DE-588)131825763 aut Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology von Vanessa Capodieci [2006] 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Neubiberg, Univ. der Bundeswehr München, Diss., 2005 Praseodymoxide (DE-588)4740848-0 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Gate-Oxid (DE-588)4269383-4 gnd rswk-swf Lanthanoxid (DE-588)4441515-1 gnd rswk-swf Dielektrische Schicht (DE-588)4194257-7 gnd rswk-swf Aluminiumoxide (DE-588)4001590-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Dielektrische Schicht (DE-588)4194257-7 s Gate-Oxid (DE-588)4269383-4 s Aluminiumoxide (DE-588)4001590-7 s Praseodymoxide (DE-588)4740848-0 s Lanthanoxid (DE-588)4441515-1 s Molekularstrahlepitaxie (DE-588)4170399-6 s DE-604 http://d-nb.info/982288042/34 Langzeitarchivierung Nationalbibliothek https://nbn-resolving.org/urn:nbn:de:bvb:706-1682 Resolving-System https://athene-forschung.unibw.de/86189 Verlag kostenfrei Volltext ca. 5,3 MB |
| spellingShingle | Capodieci, Vanessa Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology Praseodymoxide (DE-588)4740848-0 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Gate-Oxid (DE-588)4269383-4 gnd Lanthanoxid (DE-588)4441515-1 gnd Dielektrische Schicht (DE-588)4194257-7 gnd Aluminiumoxide (DE-588)4001590-7 gnd |
| subject_GND | (DE-588)4740848-0 (DE-588)4170399-6 (DE-588)4269383-4 (DE-588)4441515-1 (DE-588)4194257-7 (DE-588)4001590-7 (DE-588)4113937-9 |
| title | Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology |
| title_auth | Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology |
| title_exact_search | Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology |
| title_exact_search_txtP | Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology |
| title_full | Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology von Vanessa Capodieci |
| title_fullStr | Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology von Vanessa Capodieci |
| title_full_unstemmed | Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology von Vanessa Capodieci |
| title_short | Molecular beam deposition (MBD) and characterisation of high-k material as alternative gate oxides for MOS-technology |
| title_sort | molecular beam deposition mbd and characterisation of high k material as alternative gate oxides for mos technology |
| topic | Praseodymoxide (DE-588)4740848-0 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Gate-Oxid (DE-588)4269383-4 gnd Lanthanoxid (DE-588)4441515-1 gnd Dielektrische Schicht (DE-588)4194257-7 gnd Aluminiumoxide (DE-588)4001590-7 gnd |
| topic_facet | Praseodymoxide Molekularstrahlepitaxie Gate-Oxid Lanthanoxid Dielektrische Schicht Aluminiumoxide Hochschulschrift |
| url | http://d-nb.info/982288042/34 https://nbn-resolving.org/urn:nbn:de:bvb:706-1682 https://athene-forschung.unibw.de/86189 |
| work_keys_str_mv | AT capodiecivanessa molecularbeamdepositionmbdandcharacterisationofhighkmaterialasalternativegateoxidesformostechnology |