Holdings: Theory of defects in semiconductors

Theory of defects in semiconductors: with 15 tables

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Bibliographic Details
Other Authors:	Drabold, David A. (Editor)
Format:	Book
Language:	English
Published:	Berlin [u.a.] Springer 2007
Series:	Topics in applied physics 104
Subjects:	Halbleiter - Gitterbaufehler Semiconductors > Defects Gitterbaufehler Halbleiter
Online Access:	Inhaltstext Inhaltsverzeichnis
Item Description:	Literaturangaben
Physical Description:	XIII, 295 S. Ill., graph. Darst.
ISBN:	3540334009

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LEADER	00000nam a2200000 cb4500
001	BV022260581
003	DE-604
005	20070424
007	t
008	070207s2007 gw ad\|\| \|\|\|\| 00\|\|\| eng d
015			\|a 06,N14,0593 \|2 dnb
015			\|a 06,A48,0949 \|2 dnb
016	7		\|a 978881842 \|2 DE-101
020			\|a 3540334009 \|c Pp. : EUR 160.45 (freier Pr.), ca. sfr 254.00 (freier Pr.) \|9 3-540-33400-9
024	3		\|a 9783540334002
028	5	2	\|a 11690320
035			\|a (OCoLC)255526216
035			\|a (DE-599)BVBBV022260581
040			\|a DE-604 \|b ger \|e rakddb
041	0		\|a eng
044			\|a gw \|c XA-DE-BE
049			\|a DE-703 \|a DE-11
050		0	\|a QC611.6.D4
082	0		\|a 530
084			\|a UP 2100 \|0 (DE-625)146354: \|2 rvk
084			\|a 530 \|2 sdnb
245	1	0	\|a Theory of defects in semiconductors \|b with 15 tables \|c David A. Drabold ; ... (ed.)
264		1	\|a Berlin [u.a.] \|b Springer \|c 2007
300			\|a XIII, 295 S. \|b Ill., graph. Darst.
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
490	1		\|a Topics in applied physics \|v 104
500			\|a Literaturangaben
650		4	\|a Halbleiter - Gitterbaufehler
650		4	\|a Semiconductors \|x Defects
650	0	7	\|a Gitterbaufehler \|0 (DE-588)4125030-8 \|2 gnd \|9 rswk-swf
650	0	7	\|a Halbleiter \|0 (DE-588)4022993-2 \|2 gnd \|9 rswk-swf
689	0	0	\|a Halbleiter \|0 (DE-588)4022993-2 \|D s
689	0	1	\|a Gitterbaufehler \|0 (DE-588)4125030-8 \|D s
689	0		\|5 DE-604
700	1		\|a Drabold, David A. \|4 edt
830		0	\|a Topics in applied physics \|v 104 \|w (DE-604)BV008007504 \|9 104
856	4	2	\|q text/html \|u http://deposit.dnb.de/cgi-bin/dokserv?id=2784317&prov=M&dok_var=1&dok_ext=htm \|3 Inhaltstext
856	4	2	\|m OEBV Datenaustausch \|q application/pdf \|u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015471230&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA \|3 Inhaltsverzeichnis
999			\|a oai:aleph.bib-bvb.de:BVB01-015471230

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_version_	1804136260545019904
adam_text	CONT ENT S FOREWORD MANIIELCARDONA ............................................... 1 1 EARLY HISTORY AND CONTENTS OF THE PRESENT VOLUME ............... 1 ......................................... 2 BIBLIOMETRIC STUDIES 7 R, EFERENCES ..................................................... 9 INDEX .......................................................... 10 DEFECT THEORY: AN ARMCHAIR HISTORY ........................... DAVID A . DRABOID. STEFAN K . ESTREICHER 11 1 LNTRODUCTION ................................................ 11 ..................................... 2 THE EVOLUTION OF THEORY 13 ............................ 3 A SKETCH OF FIRST-PRINCIPLES THEORY 16 .......................... 3.1 SINGLEPARTICLE METHODS: HISTORY 17 ........... 3.2 DIRECT APPROACHES TO THE MANY-ELECTRON PROBLEM 18 ................. 3.3 HARTREE AND HARTREE-FOCK APPROXIMATIONS 18 ............................... 3.4 DENSITY- FUNCTIONAL THEORY 19 .............................. 3.4.1 THOMAS-FERMI MODEL 19 .................. 3.4.2 MODERN DENSITY-F UNCTIONAL THEORY 20 ........................................... 4 THE CONTRIBUTIONS 22 REFERENCES ..................................................... 23 INDEX .......................................................... 26 SUPERCELL METHODS FOR DEFECT CALCULATIONS RISTOM.NIEMINEN ............................................. 29 ................................................ 1 INTRODUCTION 29 ................................... 2 DENSITY-FUNCTIONAL THEORY 31 ................................. 3 SIIPERCELL AND OTHER METHODS 32 .............................. 4 ISSUES WITH THE SUPERCELL METHOD 34 5 THE EXCHANGE-CORRELATION F UNCTIONALS ................................. AND THE SEMICONDUCTING GAP 36 6 CORE AND SEMICORE ELECTRONS: PSEIIDOPOTENTIALS AND BEYOND ................................................ 40 7 BASISSETS .................................................. 42 8 TIME-DEPENDENT AND FINITETEMPERATURE SIMIILATIONS ............ 43 9 JAHN-TELLER DISTORTIONS IN SEMICONDUCTOR DEFECTS ............... 44 X CONTENTS ...................................... 9.1 VACANCY IN SILICON 45 .......................... 9.2 SUBSTITUTIONAL COPPER IN SILICON 46 ........................................... 10 VIBRATIONALMODES 47 ............................................ I1 IONIZATION LEVELS 48 12 THE MARKER METHOD ......................................... 50 ...................................... 13 BRILLOUIN-ZONE SAMPLING 51 14 CHARGED DEFECTS AND ELECTROSTATIC CORRECTIONS .................. 52 15 ENERGY-LEVEL REFERENCES AND VALENCE-BAND ALIGNMENT ........... 55 16 EXAMPLES: THE MONOVACANCY AND SUBSTITUTIONAL COPPER IN SILICON . 56 16.1 EXPERIMENTS ........................................... 56 ............................................ 16.2 CALCULATIONS 58 .................................... 17 SUMMARY AND CONCLUSIONS 60 REFERENCES ..................................................... 61 INDEX .......................................................... 64 MARKER-METHOD CALCULATIONS FOR ELECTRICAL LEVELS USING GAUSSIAN-ORBITAL BASIS SETS .............................. J.P. GOSS. M.J. SHAW,, P.R. BRIDDON 69 1 INTRODUCTION ................................................ 69 ...................................... 2 COMPUTATIONAL METHOD 71 ...................................... 2.1 GAUSSIAN BASIS SET 72 .................................... 2.2 CHOICE OF EXPONENTS 75 ................................. 2.3 CA7E STUDY: BULK SILICON 76 .............................. 2.4 CHARGE-DENSITY EXPANSIONS 80 ............................................. 3 ELECTRICAL LEVELS 80 ...................................... 3.1 FORMATION ENERGY 81 3.2 CALCULATION OF ELECTRICAL LEVELS USING THE MARKER METHOD .... 83 ................... 4 APPLICATION TO DEFECTS IN GROUPIV MATERIALS 84 .................... 4.1 CHALCOGEN-HYDROGEN DONORS IN SILICON 84 .................... 4.2 V0 CENTERS IN SILICON AND GERMANIUM 86 ...................... 4.3 SHALLOW AND DEEP LEVELS IN DIAMOND 87 5 SUMMARY ................................................... 89 REFERENCES ..................................................... 90 INDEX .......................................................... 92 DYNAMICAL MATRICES AND FREE ENERGIES ............................... STEFAN K . ESTREICHER. MAHDI SANATI 95 1 INTRODUCTION ................................................ 95 2 DYNAMICAL MATRICES ......................................... 97 3 LOCAL AND PSEUDOLOCAL MODES ................................. 99 4 VIBRATIONAL LIFETIMES AND DECAY CHANNELS ...................... 100 .................... 5 VIBRATIONAL FREE ENERGIES AND SPECIFIC HEATS 101 ...................... 6 THEORY OF DEFECTS AT FINITE TEMPERATURES 105 7 DISCUSSION .................................................. 108 REFERENCES ..................................................... 110 CONTENTS XI .......................................................... INDEX 112 THE CALCULATION OF FREE-ENERGIES IN SEMICONDUCTORS: DEFECTS. TRANSITIONS AND PHASE DIAGRAMS E . R . HERNANDEZ. A . ANTONELLI. L . COLOMBO. P . ORDEJON ............. 115 1 INTRODUCTION ................................................ 115 .............................. 2 THE CALCULATION OF F REE-ENERGIES 116 ....... 2.1 THERMODYNARNIC INTEGRATION AND ADIABATIC SWITCHING 117 ...................................... 2.2 REVERSIBLE SCALING 120 .................... 2.3 PHASE BOUNDARIES AND PHASE DIAGRAMS 122 3 APPLICATIONS ................................................ 125 ............................ 3.1 THERMAL PROPERTIES OF DEFECTS 125 ....................................... 3.2 MELTING OF SILICON 128 ........................................ 3.3 PHASE DIAGRAMS 132 ..................................... 4 CONCLUSIONS AND OUTLOOK 136 REFERENCES ..................................................... 136 INDEX .......................................................... 138 QUANTUM MONTE CARLO TECHNIQUES AND DEFECTS IN SEMICONDUCTORS R.J.NEEDS .................................................. 141 ................................................ 1 INTRODUCTION 141 ............................... 2 QUANTUM MONTE CARLO METHODS 142 ...................................... 2.1 THE VMC METHOD 143 ...................................... 2.2 THE DMC METHOD 144 ..................................... 2.3 TRIAL WAVEFUNCTIONS 146 ...................... 2.4 OPTIMIZATIORI OF TRIAL WAVEFUNCTIONS 147 ..... 2.5 QMC CALCULATIONS WITHIN PERIODIC BOUNDARY CONDITIONS 147 ............... 2.6 USING PSEUDOPOTENTIALS IN QMC CALCIILATIONS 148 .......................... 3 DMC CALCULATIONS FOR EXCITED STATES 149 ......................... 4 SOURCES OF ERROR IN DMC CALCULATIONS 149 5 APPLICATIONS OF QMC TO THE COHESIVE ENERGIES OFSOLIDS ................................................... 150 6 APPLICATIONS OF QMC TO DEFECTS IN SEMICONDUCTORS .............. 151 ................... 6.1 USING STRUCTURES FROM SIMPLER METHODS 151 ............................ 6.2 SILICON SELF-INTERSTITIAL DEFECTS 152 6.2.1 DFT CALCULATIONS ON SILICON SELF-INTERSTITIALS ......... 154 6.2.2 QMC CALCULATIONS ON SILICON SELF-INTERSTITIALS ......... 156 ............................. 6.3 NEUTRAL VACANCY IN DIAMOND 157 6.3.1 VMC AND DMC CALCULATIONS ON THE NEUTRAL VACANCY INDIAMOND ....................................... 157 6.4 SCHOTTKY DEFECTS IN MAGNESIUM OXIDE ..................... 158 7 CONCLUSIO NS ................................................. 160 REFERENCES ..................................................... 161 INDEX .......................................................... 163 XI1 CONTENTS QUASIPARTICLE CALCULATIONS FOR POINT DEFECTS AT SEMICONDUCTOR SURFACES ............................. ARNO SCHINDLMAYR7 MATTHIAS SCHEFFLER 165 ................................................ 1 INTRODUCTION 165 ...................................... 2 COMPUTATIONAL METHODS 168 ............................... 2.1 DENSITY-FUNCTIONAL THEORY 168 ......................... 2.2 MANY-BODY PERTURBATION THEORY 171 .................... 3 ELECTRONIC STRUCTURE OF DEFECT-FREE SURFACES 176 4 DEFECT STATES ............................................... 179 ..................................... 5 CHARGE-TRANSITION LEVELS 184 ................................................... 6 SUMMARY 187 REFERENCES ..................................................... 188 INDEX .......................................................... 190 MULTISCALE MODELING OF DEFECTS IN SEMICONDUCTORS: A NOVEL MOLECULAR-DYNAMICS SCHEME GABOR CS&NYI7 GIANPIETRO MORAS. JAMES R . KERMODE. MICHAEL C . PAYNE. ALISON MAINWOOD. ALESSANDRO DE VITA ............ 193 ................................................ 1 INTRODUCTION 193 .............................................. 2 AHYBRIDVIEW 194 ........................................... 3 HYBRID SIMULATION 197 4 THELOTFSCHEME .......................................... 200 ................................................ 5 APPLICATIONS 203 ................................................... 6 SUMMARY 210 REFERENCES ..................................................... 210 INDEX .......................................................... 211 EMPIRICAL MOLECULAR DYNAMICS: POSSIBILITIES. REQUIREMENTS. AND LIMITATIONS KURT SCHEERSCHMIDT ............................................. 213 .............. 1 INTRODUCTION: WHY EMPIRICAL MOLECULAR DYNAMICS? 213 ................. 2 EMPIRICAL MOLECULAR DYNAMICS: BASIC CONCEPTS 216 2.1 NEWTONIAN EQUATIONS AND NUMERICAL INTEGRATION ............ 216 ............ 2.2 PARTICLE MECHANICS AND NONEQUILIBRIUM SYSTEMS 218 ................. 2.3 BOUNDARY CONDITIONS AND SYSTEM CONTROL 220 .......... 2.4 MANY-BODY EMPIRICAL POTENTIALS AND FORCE FIELDS 221 .............................. 2.5 DETERMINATION OF PROPERTIES 224 ................ 3 EXTENSIONS OF THE EMPIRICAL MOLECULAR DYNAMICS 225 .......... 3.1 MODIFIED BOUNDARY CONDITIONS: ELASTIC EMBEDDING 225 ....... 3.2 TIGHT-BINDING-BASED ANALYTIC BOND-ORDER POTENTIALS 227 ................................................ 4 APPLICATIONS 230 ....... 4.1 QUANTUM DOTS: RELAXATION. REORDERING. AND STABILITY 231 4.2 BONDED INTERFACES: TAILORING ELECTRONIC ............................... OR MECHANICAL PROPERTIES? 233 ..................................... 5 CONCLUSIONS AND OUTLOOK 236 CONTENTS XI11 REFERENCES ..................................................... 237 .......................................................... INDEX 241 DEFECTS IN AMORPHOUS SEMICONDUCTORS: AMORPHOUS SILICON ...................................... D.A. DRABOLD. T.A. ABTEW 245 ................................................ 1 INTRODIICTION 245 .................................. 2 AMORPHOUS SEMICONDUCTORS 246 ......................... 3 DEFECTS IN AMORPHOUS SEMICONDUCTORS 248 ..................................... 3.1 DEFINITION OF DEFECT 248 ................ 3.2 LONG-TIME DYNARNICS AND DEFECT EQUILIBRIA 250 ........... 3.3 ELECTRONIC ASPECTS OF ANIORPHOUS SEMICONDUCTORS 250 ...... 3.4 ELECTRON CORRELATION ENERGY: ELECTRON-ELECTRON EFFECTS 252 .......................... 4 MODELING AMORPHOUS SEMICONDUCTORS 253 ............................... 4.1 FORMING STRUCTURAL MODELS 253 ................................... 4.2 INTERATOMIC POTENTIALS 255 4.3 LORE OF APPROXIMATIONS IN DENSITY-FUNCTIONAL CALCULATIOM . . 255 ......................... 4.4 THE ELECTRON-LATTICE INTERACTION 257 ................................ 5 DEFECTS IN AMORPHOUS SILICON 258 REFERENCES ..................................................... 264 .......................................................... INDEX 266 LIGHT INDUCED EFFECTS IN AMORPHOUS AND GLASSY SOLIDS .................................... S . I . SIMDYANKIN. S . R . ELLIOTT 269 1 PHOTOINDUCED METASTABILITY IN AMORPHOUS SOLIDS: AN ......................................... EXPERIMENTALSURVEY 269 ........................................... 1.1 INTRODUCTION 269 .............. 1.2 PHOTOINDUCED EFFECTS IN CHALCOGENIDE GLASSES 271 2 THEORETICAL STUDIES OF PHOTOINDUCED EXCITATIONS ...................................... IN AMORPHOUS MATERIALS 272 2.1 APPLICATION OF THE DENSITY-FUNCTIONAL-BASED TIGHT-BINDING .................. METHOD TO THE CASE OF AMORPHOUS AS2S3 273 REFERENCES ..................................................... 283 INDEX .......................................................... 285 ......................................................... INDEX 287
adam_txt	CONT ENT S FOREWORD MANIIELCARDONA . 1 1 EARLY HISTORY AND CONTENTS OF THE PRESENT VOLUME . 1 . 2 BIBLIOMETRIC STUDIES 7 R, EFERENCES . 9 INDEX . 10 DEFECT THEORY: AN ARMCHAIR HISTORY . DAVID A . DRABOID. STEFAN K . ESTREICHER 11 1 LNTRODUCTION . 11 . 2 THE EVOLUTION OF THEORY 13 . 3 A SKETCH OF FIRST-PRINCIPLES THEORY 16 . 3.1 SINGLEPARTICLE METHODS: HISTORY 17 . 3.2 DIRECT APPROACHES TO THE MANY-ELECTRON PROBLEM 18 . 3.3 HARTREE AND HARTREE-FOCK APPROXIMATIONS 18 . 3.4 DENSITY- FUNCTIONAL THEORY 19 . 3.4.1 THOMAS-FERMI MODEL 19 . 3.4.2 MODERN DENSITY-F'UNCTIONAL THEORY 20 . 4 THE CONTRIBUTIONS 22 REFERENCES . 23 INDEX . 26 SUPERCELL METHODS FOR DEFECT CALCULATIONS RISTOM.NIEMINEN . 29 . 1 INTRODUCTION 29 . 2 DENSITY-FUNCTIONAL THEORY 31 . 3 SIIPERCELL AND OTHER METHODS 32 . 4 ISSUES WITH THE SUPERCELL METHOD 34 5 THE EXCHANGE-CORRELATION F'UNCTIONALS . AND THE SEMICONDUCTING GAP 36 6 CORE AND SEMICORE ELECTRONS: PSEIIDOPOTENTIALS AND BEYOND . 40 7 BASISSETS . 42 8 TIME-DEPENDENT AND FINITETEMPERATURE SIMIILATIONS . 43 9 JAHN-TELLER DISTORTIONS IN SEMICONDUCTOR DEFECTS . 44 X CONTENTS . 9.1 VACANCY IN SILICON 45 . 9.2 SUBSTITUTIONAL COPPER IN SILICON 46 . 10 VIBRATIONALMODES 47 . I1 IONIZATION LEVELS 48 12 THE MARKER METHOD . 50 . 13 BRILLOUIN-ZONE SAMPLING 51 14 CHARGED DEFECTS AND ELECTROSTATIC CORRECTIONS . 52 15 ENERGY-LEVEL REFERENCES AND VALENCE-BAND ALIGNMENT . 55 16 EXAMPLES: THE MONOVACANCY AND SUBSTITUTIONAL COPPER IN SILICON . 56 16.1 EXPERIMENTS . 56 . 16.2 CALCULATIONS 58 . 17 SUMMARY AND CONCLUSIONS 60 REFERENCES . 61 INDEX . 64 MARKER-METHOD CALCULATIONS FOR ELECTRICAL LEVELS USING GAUSSIAN-ORBITAL BASIS SETS . J.P. GOSS. M.J. SHAW,, P.R. BRIDDON 69 1 INTRODUCTION . 69 . 2 COMPUTATIONAL METHOD 71 . 2.1 GAUSSIAN BASIS SET 72 . 2.2 CHOICE OF EXPONENTS 75 . 2.3 CA7E STUDY: BULK SILICON 76 . 2.4 CHARGE-DENSITY EXPANSIONS 80 . 3 ELECTRICAL LEVELS 80 . 3.1 FORMATION ENERGY 81 3.2 CALCULATION OF ELECTRICAL LEVELS USING THE MARKER METHOD . 83 . 4 APPLICATION TO DEFECTS IN GROUPIV MATERIALS 84 . 4.1 CHALCOGEN-HYDROGEN DONORS IN SILICON 84 . 4.2 V0 CENTERS IN SILICON AND GERMANIUM 86 . 4.3 SHALLOW AND DEEP LEVELS IN DIAMOND 87 5 SUMMARY . 89 REFERENCES . 90 INDEX . 92 DYNAMICAL MATRICES AND FREE ENERGIES . STEFAN K . ESTREICHER. MAHDI SANATI 95 1 INTRODUCTION . 95 2 DYNAMICAL MATRICES . 97 3 LOCAL AND PSEUDOLOCAL MODES . 99 4 VIBRATIONAL LIFETIMES AND DECAY CHANNELS . 100 . 5 VIBRATIONAL FREE ENERGIES AND SPECIFIC HEATS 101 . 6 THEORY OF DEFECTS AT FINITE TEMPERATURES 105 7 DISCUSSION . 108 REFERENCES . 110 CONTENTS XI . INDEX 112 THE CALCULATION OF FREE-ENERGIES IN SEMICONDUCTORS: DEFECTS. TRANSITIONS AND PHASE DIAGRAMS E . R . HERNANDEZ. A . ANTONELLI. L . COLOMBO. P . ORDEJON . 115 1 INTRODUCTION . 115 . 2 THE CALCULATION OF F'REE-ENERGIES 116 . 2.1 THERMODYNARNIC INTEGRATION AND ADIABATIC SWITCHING 117 . 2.2 REVERSIBLE SCALING 120 . 2.3 PHASE BOUNDARIES AND PHASE DIAGRAMS 122 3 APPLICATIONS . 125 . 3.1 THERMAL PROPERTIES OF DEFECTS 125 . 3.2 MELTING OF SILICON 128 . 3.3 PHASE DIAGRAMS 132 . 4 CONCLUSIONS AND OUTLOOK 136 REFERENCES . 136 INDEX . 138 QUANTUM MONTE CARLO TECHNIQUES AND DEFECTS IN SEMICONDUCTORS R.J.NEEDS . 141 . 1 INTRODUCTION 141 . 2 QUANTUM MONTE CARLO METHODS 142 . 2.1 THE VMC METHOD 143 . 2.2 THE DMC METHOD 144 . 2.3 TRIAL WAVEFUNCTIONS 146 . 2.4 OPTIMIZATIORI OF TRIAL WAVEFUNCTIONS 147 . 2.5 QMC CALCULATIONS WITHIN PERIODIC BOUNDARY CONDITIONS 147 . 2.6 USING PSEUDOPOTENTIALS IN QMC CALCIILATIONS 148 . 3 DMC CALCULATIONS FOR EXCITED STATES 149 . 4 SOURCES OF ERROR IN DMC CALCULATIONS 149 5 APPLICATIONS OF QMC TO THE COHESIVE ENERGIES OFSOLIDS . 150 6 APPLICATIONS OF QMC TO DEFECTS IN SEMICONDUCTORS . 151 . 6.1 USING STRUCTURES FROM SIMPLER METHODS 151 . 6.2 SILICON SELF-INTERSTITIAL DEFECTS 152 6.2.1 DFT CALCULATIONS ON SILICON SELF-INTERSTITIALS . 154 6.2.2 QMC CALCULATIONS ON SILICON SELF-INTERSTITIALS . 156 . 6.3 NEUTRAL VACANCY IN DIAMOND 157 6.3.1 VMC AND DMC CALCULATIONS ON THE NEUTRAL VACANCY INDIAMOND . 157 6.4 SCHOTTKY DEFECTS IN MAGNESIUM OXIDE . 158 7 CONCLUSIO NS . 160 REFERENCES . 161 INDEX . 163 XI1 CONTENTS QUASIPARTICLE CALCULATIONS FOR POINT DEFECTS AT SEMICONDUCTOR SURFACES . ARNO SCHINDLMAYR7 MATTHIAS SCHEFFLER 165 . 1 INTRODUCTION 165 . 2 COMPUTATIONAL METHODS 168 . 2.1 DENSITY-FUNCTIONAL THEORY 168 . 2.2 MANY-BODY PERTURBATION THEORY 171 . 3 ELECTRONIC STRUCTURE OF DEFECT-FREE SURFACES 176 4 DEFECT STATES . 179 . 5 CHARGE-TRANSITION LEVELS 184 . 6 SUMMARY 187 REFERENCES . 188 INDEX . 190 MULTISCALE MODELING OF DEFECTS IN SEMICONDUCTORS: A NOVEL MOLECULAR-DYNAMICS SCHEME GABOR CS&NYI7 GIANPIETRO MORAS. JAMES R . KERMODE. MICHAEL C . PAYNE. ALISON MAINWOOD. ALESSANDRO DE VITA . 193 . 1 INTRODUCTION 193 . 2 AHYBRIDVIEW 194 . 3 HYBRID SIMULATION 197 4 THELOTFSCHEME . 200 . 5 APPLICATIONS 203 . 6 SUMMARY 210 REFERENCES . 210 INDEX . 211 EMPIRICAL MOLECULAR DYNAMICS: POSSIBILITIES. REQUIREMENTS. AND LIMITATIONS KURT SCHEERSCHMIDT . 213 . 1 INTRODUCTION: WHY EMPIRICAL MOLECULAR DYNAMICS? 213 . 2 EMPIRICAL MOLECULAR DYNAMICS: BASIC CONCEPTS 216 2.1 NEWTONIAN EQUATIONS AND NUMERICAL INTEGRATION . 216 . 2.2 PARTICLE MECHANICS AND NONEQUILIBRIUM SYSTEMS 218 . 2.3 BOUNDARY CONDITIONS AND SYSTEM CONTROL 220 . 2.4 MANY-BODY EMPIRICAL POTENTIALS AND FORCE FIELDS 221 . 2.5 DETERMINATION OF PROPERTIES 224 . 3 EXTENSIONS OF THE EMPIRICAL MOLECULAR DYNAMICS 225 . 3.1 MODIFIED BOUNDARY CONDITIONS: ELASTIC EMBEDDING 225 . 3.2 TIGHT-BINDING-BASED ANALYTIC BOND-ORDER POTENTIALS 227 . 4 APPLICATIONS 230 . 4.1 QUANTUM DOTS: RELAXATION. REORDERING. AND STABILITY 231 4.2 BONDED INTERFACES: TAILORING ELECTRONIC . OR MECHANICAL PROPERTIES? 233 . 5 CONCLUSIONS AND OUTLOOK 236 CONTENTS XI11 REFERENCES . 237 . INDEX 241 DEFECTS IN AMORPHOUS SEMICONDUCTORS: AMORPHOUS SILICON . D.A. DRABOLD. T.A. ABTEW 245 . 1 INTRODIICTION 245 . 2 AMORPHOUS SEMICONDUCTORS 246 . 3 DEFECTS IN AMORPHOUS SEMICONDUCTORS 248 . 3.1 DEFINITION OF DEFECT 248 . 3.2 LONG-TIME DYNARNICS AND DEFECT EQUILIBRIA 250 . 3.3 ELECTRONIC ASPECTS OF ANIORPHOUS SEMICONDUCTORS 250 . 3.4 ELECTRON CORRELATION ENERGY: ELECTRON-ELECTRON EFFECTS 252 . 4 MODELING AMORPHOUS SEMICONDUCTORS 253 . 4.1 FORMING STRUCTURAL MODELS 253 . 4.2 INTERATOMIC POTENTIALS 255 4.3 LORE OF APPROXIMATIONS IN DENSITY-FUNCTIONAL CALCULATIOM . . 255 . 4.4 THE ELECTRON-LATTICE INTERACTION 257 . 5 DEFECTS IN AMORPHOUS SILICON 258 REFERENCES . 264 . INDEX 266 LIGHT INDUCED EFFECTS IN AMORPHOUS AND GLASSY SOLIDS . S . I . SIMDYANKIN. S . R . ELLIOTT 269 1 PHOTOINDUCED METASTABILITY IN AMORPHOUS SOLIDS: AN . EXPERIMENTALSURVEY 269 . 1.1 INTRODUCTION 269 . 1.2 PHOTOINDUCED EFFECTS IN CHALCOGENIDE GLASSES 271 2 THEORETICAL STUDIES OF PHOTOINDUCED EXCITATIONS . IN AMORPHOUS MATERIALS 272 2.1 APPLICATION OF THE DENSITY-FUNCTIONAL-BASED TIGHT-BINDING . METHOD TO THE CASE OF AMORPHOUS AS2S3 273 REFERENCES . 283 INDEX . 285 . INDEX 287
any_adam_object	1
any_adam_object_boolean	1
author2	Drabold, David A.
author2_role	edt
author2_variant	d a d da dad
author_facet	Drabold, David A.
building	Verbundindex
bvnumber	BV022260581
callnumber-first	Q - Science
callnumber-label	QC611
callnumber-raw	QC611.6.D4
callnumber-search	QC611.6.D4
callnumber-sort	QC 3611.6 D4
callnumber-subject	QC - Physics
classification_rvk	UP 2100
ctrlnum	(OCoLC)255526216 (DE-599)BVBBV022260581
dewey-full	530
dewey-hundreds	500 - Natural sciences and mathematics
dewey-ones	530 - Physics
dewey-raw	530
dewey-search	530
dewey-sort	3530
dewey-tens	530 - Physics
discipline	Physik
discipline_str_mv	Physik
format	Book
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01960nam a2200517 cb4500</leader><controlfield tag="001">BV022260581</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20070424 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">070207s2007 gw ad\|\| \|\|\|\| 00\|\|\| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">06,N14,0593</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">06,A48,0949</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">978881842</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3540334009</subfield><subfield code="c">Pp. : EUR 160.45 (freier Pr.), ca. sfr 254.00 (freier Pr.)</subfield><subfield code="9">3-540-33400-9</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783540334002</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">11690320</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)255526216</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV022260581</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-11</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC611.6.D4</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 2100</subfield><subfield code="0">(DE-625)146354:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Theory of defects in semiconductors</subfield><subfield code="b">with 15 tables</subfield><subfield code="c">David A. Drabold ; ... (ed.)</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin [u.a.]</subfield><subfield code="b">Springer</subfield><subfield code="c">2007</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XIII, 295 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Topics in applied physics</subfield><subfield code="v">104</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Halbleiter - Gitterbaufehler</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Defects</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Gitterbaufehler</subfield><subfield code="0">(DE-588)4125030-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Gitterbaufehler</subfield><subfield code="0">(DE-588)4125030-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Drabold, David A.</subfield><subfield code="4">edt</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Topics in applied physics</subfield><subfield code="v">104</subfield><subfield code="w">(DE-604)BV008007504</subfield><subfield code="9">104</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="q">text/html</subfield><subfield code="u">http://deposit.dnb.de/cgi-bin/dokserv?id=2784317&prov=M&dok_var=1&dok_ext=htm</subfield><subfield code="3">Inhaltstext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">OEBV Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015471230&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-015471230</subfield></datafield></record></collection>
id	DE-604.BV022260581
illustrated	Illustrated
index_date	2024-07-02T16:42:41Z
indexdate	2024-07-09T20:53:34Z
institution	BVB
isbn	3540334009
language	English
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-015471230
oclc_num	255526216
open_access_boolean
owner	DE-703 DE-11
owner_facet	DE-703 DE-11
physical	XIII, 295 S. Ill., graph. Darst.
publishDate	2007
publishDateSearch	2007
publishDateSort	2007
publisher	Springer
record_format	marc
series	Topics in applied physics
series2	Topics in applied physics
spelling	Theory of defects in semiconductors with 15 tables David A. Drabold ; ... (ed.) Berlin [u.a.] Springer 2007 XIII, 295 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Topics in applied physics 104 Literaturangaben Halbleiter - Gitterbaufehler Semiconductors Defects Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Gitterbaufehler (DE-588)4125030-8 s DE-604 Drabold, David A. edt Topics in applied physics 104 (DE-604)BV008007504 104 text/html http://deposit.dnb.de/cgi-bin/dokserv?id=2784317&prov=M&dok_var=1&dok_ext=htm Inhaltstext OEBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015471230&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Theory of defects in semiconductors with 15 tables Topics in applied physics Halbleiter - Gitterbaufehler Semiconductors Defects Gitterbaufehler (DE-588)4125030-8 gnd Halbleiter (DE-588)4022993-2 gnd
subject_GND	(DE-588)4125030-8 (DE-588)4022993-2
title	Theory of defects in semiconductors with 15 tables
title_auth	Theory of defects in semiconductors with 15 tables
title_exact_search	Theory of defects in semiconductors with 15 tables
title_exact_search_txtP	Theory of defects in semiconductors with 15 tables
title_full	Theory of defects in semiconductors with 15 tables David A. Drabold ; ... (ed.)
title_fullStr	Theory of defects in semiconductors with 15 tables David A. Drabold ; ... (ed.)
title_full_unstemmed	Theory of defects in semiconductors with 15 tables David A. Drabold ; ... (ed.)
title_short	Theory of defects in semiconductors
title_sort	theory of defects in semiconductors with 15 tables
title_sub	with 15 tables
topic	Halbleiter - Gitterbaufehler Semiconductors Defects Gitterbaufehler (DE-588)4125030-8 gnd Halbleiter (DE-588)4022993-2 gnd
topic_facet	Halbleiter - Gitterbaufehler Semiconductors Defects Gitterbaufehler Halbleiter
url	http://deposit.dnb.de/cgi-bin/dokserv?id=2784317&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015471230&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV008007504
work_keys_str_mv	AT drabolddavida theoryofdefectsinsemiconductorswith15tables

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