Theory of defects in semiconductors: with 15 tables
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2007
|
| Schriftenreihe: | Topics in applied physics
104 |
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XIII, 295 S. Ill., graph. Darst. |
| ISBN: | 3540334009 |
Internformat
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| 245 | 1 | 0 | |a Theory of defects in semiconductors |b with 15 tables |c David A. Drabold ; ... (ed.) |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2007 | |
| 300 | |a XIII, 295 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 490 | 1 | |a Topics in applied physics |v 104 | |
| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Halbleiter - Gitterbaufehler | |
| 650 | 4 | |a Semiconductors |x Defects | |
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Datensatz im Suchindex
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| adam_text | CONT ENT S FOREWORD MANIIELCARDONA
............................................... 1 1 EARLY HISTORY AND
CONTENTS OF THE PRESENT VOLUME ............... 1
......................................... 2 BIBLIOMETRIC STUDIES 7 R,
EFERENCES ..................................................... 9 INDEX
.......................................................... 10 DEFECT
THEORY: AN ARMCHAIR HISTORY ........................... DAVID A .
DRABOID. STEFAN K . ESTREICHER 11 1 LNTRODUCTION
................................................ 11
..................................... 2 THE EVOLUTION OF THEORY 13
............................ 3 A SKETCH OF FIRST-PRINCIPLES THEORY 16
.......................... 3.1 SINGLEPARTICLE METHODS: HISTORY 17
........... 3.2 DIRECT APPROACHES TO THE MANY-ELECTRON PROBLEM 18
................. 3.3 HARTREE AND HARTREE-FOCK APPROXIMATIONS 18
............................... 3.4 DENSITY- FUNCTIONAL THEORY 19
.............................. 3.4.1 THOMAS-FERMI MODEL 19
.................. 3.4.2 MODERN DENSITY-F UNCTIONAL THEORY 20
........................................... 4 THE CONTRIBUTIONS 22
REFERENCES ..................................................... 23
INDEX .......................................................... 26
SUPERCELL METHODS FOR DEFECT CALCULATIONS RISTOM.NIEMINEN
............................................. 29
................................................ 1 INTRODUCTION 29
................................... 2 DENSITY-FUNCTIONAL THEORY 31
................................. 3 SIIPERCELL AND OTHER METHODS 32
.............................. 4 ISSUES WITH THE SUPERCELL METHOD 34 5
THE EXCHANGE-CORRELATION F UNCTIONALS .................................
AND THE SEMICONDUCTING GAP 36 6 CORE AND SEMICORE ELECTRONS:
PSEIIDOPOTENTIALS AND BEYOND
................................................ 40 7 BASISSETS
.................................................. 42 8 TIME-DEPENDENT
AND FINITETEMPERATURE SIMIILATIONS ............ 43 9 JAHN-TELLER
DISTORTIONS IN SEMICONDUCTOR DEFECTS ............... 44 X CONTENTS
...................................... 9.1 VACANCY IN SILICON 45
.......................... 9.2 SUBSTITUTIONAL COPPER IN SILICON 46
........................................... 10 VIBRATIONALMODES 47
............................................ I1 IONIZATION LEVELS 48 12
THE MARKER METHOD ......................................... 50
...................................... 13 BRILLOUIN-ZONE SAMPLING 51 14
CHARGED DEFECTS AND ELECTROSTATIC CORRECTIONS .................. 52 15
ENERGY-LEVEL REFERENCES AND VALENCE-BAND ALIGNMENT ........... 55 16
EXAMPLES: THE MONOVACANCY AND SUBSTITUTIONAL COPPER IN SILICON . 56 16.1
EXPERIMENTS ........................................... 56
............................................ 16.2 CALCULATIONS 58
.................................... 17 SUMMARY AND CONCLUSIONS 60
REFERENCES ..................................................... 61
INDEX .......................................................... 64
MARKER-METHOD CALCULATIONS FOR ELECTRICAL LEVELS USING GAUSSIAN-ORBITAL
BASIS SETS .............................. J.P. GOSS. M.J. SHAW,, P.R.
BRIDDON 69 1 INTRODUCTION
................................................ 69
...................................... 2 COMPUTATIONAL METHOD 71
...................................... 2.1 GAUSSIAN BASIS SET 72
.................................... 2.2 CHOICE OF EXPONENTS 75
................................. 2.3 CA7E STUDY: BULK SILICON 76
.............................. 2.4 CHARGE-DENSITY EXPANSIONS 80
............................................. 3 ELECTRICAL LEVELS 80
...................................... 3.1 FORMATION ENERGY 81 3.2
CALCULATION OF ELECTRICAL LEVELS USING THE MARKER METHOD .... 83
................... 4 APPLICATION TO DEFECTS IN GROUPIV MATERIALS 84
.................... 4.1 CHALCOGEN-HYDROGEN DONORS IN SILICON 84
.................... 4.2 V0 CENTERS IN SILICON AND GERMANIUM 86
...................... 4.3 SHALLOW AND DEEP LEVELS IN DIAMOND 87 5
SUMMARY ................................................... 89
REFERENCES ..................................................... 90
INDEX .......................................................... 92
DYNAMICAL MATRICES AND FREE ENERGIES ...............................
STEFAN K . ESTREICHER. MAHDI SANATI 95 1 INTRODUCTION
................................................ 95 2 DYNAMICAL MATRICES
......................................... 97 3 LOCAL AND PSEUDOLOCAL
MODES ................................. 99 4 VIBRATIONAL LIFETIMES AND
DECAY CHANNELS ...................... 100 .................... 5
VIBRATIONAL FREE ENERGIES AND SPECIFIC HEATS 101 ......................
6 THEORY OF DEFECTS AT FINITE TEMPERATURES 105 7 DISCUSSION
.................................................. 108 REFERENCES
..................................................... 110 CONTENTS XI
.......................................................... INDEX 112 THE
CALCULATION OF FREE-ENERGIES IN SEMICONDUCTORS: DEFECTS. TRANSITIONS AND
PHASE DIAGRAMS E . R . HERNANDEZ. A . ANTONELLI. L . COLOMBO. P .
ORDEJON ............. 115 1 INTRODUCTION
................................................ 115
.............................. 2 THE CALCULATION OF F REE-ENERGIES 116
....... 2.1 THERMODYNARNIC INTEGRATION AND ADIABATIC SWITCHING 117
...................................... 2.2 REVERSIBLE SCALING 120
.................... 2.3 PHASE BOUNDARIES AND PHASE DIAGRAMS 122 3
APPLICATIONS ................................................ 125
............................ 3.1 THERMAL PROPERTIES OF DEFECTS 125
....................................... 3.2 MELTING OF SILICON 128
........................................ 3.3 PHASE DIAGRAMS 132
..................................... 4 CONCLUSIONS AND OUTLOOK 136
REFERENCES ..................................................... 136
INDEX .......................................................... 138
QUANTUM MONTE CARLO TECHNIQUES AND DEFECTS IN SEMICONDUCTORS R.J.NEEDS
.................................................. 141
................................................ 1 INTRODUCTION 141
............................... 2 QUANTUM MONTE CARLO METHODS 142
...................................... 2.1 THE VMC METHOD 143
...................................... 2.2 THE DMC METHOD 144
..................................... 2.3 TRIAL WAVEFUNCTIONS 146
...................... 2.4 OPTIMIZATIORI OF TRIAL WAVEFUNCTIONS 147
..... 2.5 QMC CALCULATIONS WITHIN PERIODIC BOUNDARY CONDITIONS 147
............... 2.6 USING PSEUDOPOTENTIALS IN QMC CALCIILATIONS 148
.......................... 3 DMC CALCULATIONS FOR EXCITED STATES 149
......................... 4 SOURCES OF ERROR IN DMC CALCULATIONS 149 5
APPLICATIONS OF QMC TO THE COHESIVE ENERGIES OFSOLIDS
................................................... 150 6 APPLICATIONS
OF QMC TO DEFECTS IN SEMICONDUCTORS .............. 151
................... 6.1 USING STRUCTURES FROM SIMPLER METHODS 151
............................ 6.2 SILICON SELF-INTERSTITIAL DEFECTS 152
6.2.1 DFT CALCULATIONS ON SILICON SELF-INTERSTITIALS ......... 154 6.2.2
QMC CALCULATIONS ON SILICON SELF-INTERSTITIALS ......... 156
............................. 6.3 NEUTRAL VACANCY IN DIAMOND 157 6.3.1
VMC AND DMC CALCULATIONS ON THE NEUTRAL VACANCY INDIAMOND
....................................... 157 6.4 SCHOTTKY DEFECTS IN
MAGNESIUM OXIDE ..................... 158 7 CONCLUSIO NS
................................................. 160 REFERENCES
..................................................... 161 INDEX
.......................................................... 163 XI1
CONTENTS QUASIPARTICLE CALCULATIONS FOR POINT DEFECTS AT SEMICONDUCTOR
SURFACES ............................. ARNO SCHINDLMAYR7 MATTHIAS
SCHEFFLER 165 ................................................ 1
INTRODUCTION 165 ...................................... 2 COMPUTATIONAL
METHODS 168 ............................... 2.1 DENSITY-FUNCTIONAL
THEORY 168 ......................... 2.2 MANY-BODY PERTURBATION THEORY
171 .................... 3 ELECTRONIC STRUCTURE OF DEFECT-FREE SURFACES
176 4 DEFECT STATES ............................................... 179
..................................... 5 CHARGE-TRANSITION LEVELS 184
................................................... 6 SUMMARY 187
REFERENCES ..................................................... 188
INDEX .......................................................... 190
MULTISCALE MODELING OF DEFECTS IN SEMICONDUCTORS: A NOVEL
MOLECULAR-DYNAMICS SCHEME GABOR CS&NYI7 GIANPIETRO MORAS. JAMES R .
KERMODE. MICHAEL C . PAYNE. ALISON MAINWOOD. ALESSANDRO DE VITA
............ 193 ................................................ 1
INTRODUCTION 193 .............................................. 2
AHYBRIDVIEW 194 ........................................... 3 HYBRID
SIMULATION 197 4 THELOTFSCHEME
.......................................... 200
................................................ 5 APPLICATIONS 203
................................................... 6 SUMMARY 210
REFERENCES ..................................................... 210
INDEX .......................................................... 211
EMPIRICAL MOLECULAR DYNAMICS: POSSIBILITIES. REQUIREMENTS. AND
LIMITATIONS KURT SCHEERSCHMIDT
............................................. 213 .............. 1
INTRODUCTION: WHY EMPIRICAL MOLECULAR DYNAMICS? 213 ................. 2
EMPIRICAL MOLECULAR DYNAMICS: BASIC CONCEPTS 216 2.1 NEWTONIAN EQUATIONS
AND NUMERICAL INTEGRATION ............ 216 ............ 2.2 PARTICLE
MECHANICS AND NONEQUILIBRIUM SYSTEMS 218 ................. 2.3 BOUNDARY
CONDITIONS AND SYSTEM CONTROL 220 .......... 2.4 MANY-BODY EMPIRICAL
POTENTIALS AND FORCE FIELDS 221 .............................. 2.5
DETERMINATION OF PROPERTIES 224 ................ 3 EXTENSIONS OF THE
EMPIRICAL MOLECULAR DYNAMICS 225 .......... 3.1 MODIFIED BOUNDARY
CONDITIONS: ELASTIC EMBEDDING 225 ....... 3.2 TIGHT-BINDING-BASED
ANALYTIC BOND-ORDER POTENTIALS 227
................................................ 4 APPLICATIONS 230
....... 4.1 QUANTUM DOTS: RELAXATION. REORDERING. AND STABILITY 231 4.2
BONDED INTERFACES: TAILORING ELECTRONIC ...............................
OR MECHANICAL PROPERTIES? 233 ..................................... 5
CONCLUSIONS AND OUTLOOK 236 CONTENTS XI11 REFERENCES
..................................................... 237
.......................................................... INDEX 241
DEFECTS IN AMORPHOUS SEMICONDUCTORS: AMORPHOUS SILICON
...................................... D.A. DRABOLD. T.A. ABTEW 245
................................................ 1 INTRODIICTION 245
.................................. 2 AMORPHOUS SEMICONDUCTORS 246
......................... 3 DEFECTS IN AMORPHOUS SEMICONDUCTORS 248
..................................... 3.1 DEFINITION OF DEFECT 248
................ 3.2 LONG-TIME DYNARNICS AND DEFECT EQUILIBRIA 250
........... 3.3 ELECTRONIC ASPECTS OF ANIORPHOUS SEMICONDUCTORS 250
...... 3.4 ELECTRON CORRELATION ENERGY: ELECTRON-ELECTRON EFFECTS 252
.......................... 4 MODELING AMORPHOUS SEMICONDUCTORS 253
............................... 4.1 FORMING STRUCTURAL MODELS 253
................................... 4.2 INTERATOMIC POTENTIALS 255 4.3
LORE OF APPROXIMATIONS IN DENSITY-FUNCTIONAL CALCULATIOM . . 255
......................... 4.4 THE ELECTRON-LATTICE INTERACTION 257
................................ 5 DEFECTS IN AMORPHOUS SILICON 258
REFERENCES ..................................................... 264
.......................................................... INDEX 266
LIGHT INDUCED EFFECTS IN AMORPHOUS AND GLASSY SOLIDS
.................................... S . I . SIMDYANKIN. S . R . ELLIOTT
269 1 PHOTOINDUCED METASTABILITY IN AMORPHOUS SOLIDS: AN
......................................... EXPERIMENTALSURVEY 269
........................................... 1.1 INTRODUCTION 269
.............. 1.2 PHOTOINDUCED EFFECTS IN CHALCOGENIDE GLASSES 271 2
THEORETICAL STUDIES OF PHOTOINDUCED EXCITATIONS
...................................... IN AMORPHOUS MATERIALS 272 2.1
APPLICATION OF THE DENSITY-FUNCTIONAL-BASED TIGHT-BINDING
.................. METHOD TO THE CASE OF AMORPHOUS AS2S3 273 REFERENCES
..................................................... 283 INDEX
.......................................................... 285
......................................................... INDEX 287
|
| adam_txt |
CONT ENT S FOREWORD MANIIELCARDONA
. 1 1 EARLY HISTORY AND
CONTENTS OF THE PRESENT VOLUME . 1
. 2 BIBLIOMETRIC STUDIES 7 R,
EFERENCES . 9 INDEX
. 10 DEFECT
THEORY: AN ARMCHAIR HISTORY . DAVID A .
DRABOID. STEFAN K . ESTREICHER 11 1 LNTRODUCTION
. 11
. 2 THE EVOLUTION OF THEORY 13
. 3 A SKETCH OF FIRST-PRINCIPLES THEORY 16
. 3.1 SINGLEPARTICLE METHODS: HISTORY 17
. 3.2 DIRECT APPROACHES TO THE MANY-ELECTRON PROBLEM 18
. 3.3 HARTREE AND HARTREE-FOCK APPROXIMATIONS 18
. 3.4 DENSITY- FUNCTIONAL THEORY 19
. 3.4.1 THOMAS-FERMI MODEL 19
. 3.4.2 MODERN DENSITY-F'UNCTIONAL THEORY 20
. 4 THE CONTRIBUTIONS 22
REFERENCES . 23
INDEX . 26
SUPERCELL METHODS FOR DEFECT CALCULATIONS RISTOM.NIEMINEN
. 29
. 1 INTRODUCTION 29
. 2 DENSITY-FUNCTIONAL THEORY 31
. 3 SIIPERCELL AND OTHER METHODS 32
. 4 ISSUES WITH THE SUPERCELL METHOD 34 5
THE EXCHANGE-CORRELATION F'UNCTIONALS .
AND THE SEMICONDUCTING GAP 36 6 CORE AND SEMICORE ELECTRONS:
PSEIIDOPOTENTIALS AND BEYOND
. 40 7 BASISSETS
. 42 8 TIME-DEPENDENT
AND FINITETEMPERATURE SIMIILATIONS . 43 9 JAHN-TELLER
DISTORTIONS IN SEMICONDUCTOR DEFECTS . 44 X CONTENTS
. 9.1 VACANCY IN SILICON 45
. 9.2 SUBSTITUTIONAL COPPER IN SILICON 46
. 10 VIBRATIONALMODES 47
. I1 IONIZATION LEVELS 48 12
THE MARKER METHOD . 50
. 13 BRILLOUIN-ZONE SAMPLING 51 14
CHARGED DEFECTS AND ELECTROSTATIC CORRECTIONS . 52 15
ENERGY-LEVEL REFERENCES AND VALENCE-BAND ALIGNMENT . 55 16
EXAMPLES: THE MONOVACANCY AND SUBSTITUTIONAL COPPER IN SILICON . 56 16.1
EXPERIMENTS . 56
. 16.2 CALCULATIONS 58
. 17 SUMMARY AND CONCLUSIONS 60
REFERENCES . 61
INDEX . 64
MARKER-METHOD CALCULATIONS FOR ELECTRICAL LEVELS USING GAUSSIAN-ORBITAL
BASIS SETS . J.P. GOSS. M.J. SHAW,, P.R.
BRIDDON 69 1 INTRODUCTION
. 69
. 2 COMPUTATIONAL METHOD 71
. 2.1 GAUSSIAN BASIS SET 72
. 2.2 CHOICE OF EXPONENTS 75
. 2.3 CA7E STUDY: BULK SILICON 76
. 2.4 CHARGE-DENSITY EXPANSIONS 80
. 3 ELECTRICAL LEVELS 80
. 3.1 FORMATION ENERGY 81 3.2
CALCULATION OF ELECTRICAL LEVELS USING THE MARKER METHOD . 83
. 4 APPLICATION TO DEFECTS IN GROUPIV MATERIALS 84
. 4.1 CHALCOGEN-HYDROGEN DONORS IN SILICON 84
. 4.2 V0 CENTERS IN SILICON AND GERMANIUM 86
. 4.3 SHALLOW AND DEEP LEVELS IN DIAMOND 87 5
SUMMARY . 89
REFERENCES . 90
INDEX . 92
DYNAMICAL MATRICES AND FREE ENERGIES .
STEFAN K . ESTREICHER. MAHDI SANATI 95 1 INTRODUCTION
. 95 2 DYNAMICAL MATRICES
. 97 3 LOCAL AND PSEUDOLOCAL
MODES . 99 4 VIBRATIONAL LIFETIMES AND
DECAY CHANNELS . 100 . 5
VIBRATIONAL FREE ENERGIES AND SPECIFIC HEATS 101 .
6 THEORY OF DEFECTS AT FINITE TEMPERATURES 105 7 DISCUSSION
. 108 REFERENCES
. 110 CONTENTS XI
. INDEX 112 THE
CALCULATION OF FREE-ENERGIES IN SEMICONDUCTORS: DEFECTS. TRANSITIONS AND
PHASE DIAGRAMS E . R . HERNANDEZ. A . ANTONELLI. L . COLOMBO. P .
ORDEJON . 115 1 INTRODUCTION
. 115
. 2 THE CALCULATION OF F'REE-ENERGIES 116
. 2.1 THERMODYNARNIC INTEGRATION AND ADIABATIC SWITCHING 117
. 2.2 REVERSIBLE SCALING 120
. 2.3 PHASE BOUNDARIES AND PHASE DIAGRAMS 122 3
APPLICATIONS . 125
. 3.1 THERMAL PROPERTIES OF DEFECTS 125
. 3.2 MELTING OF SILICON 128
. 3.3 PHASE DIAGRAMS 132
. 4 CONCLUSIONS AND OUTLOOK 136
REFERENCES . 136
INDEX . 138
QUANTUM MONTE CARLO TECHNIQUES AND DEFECTS IN SEMICONDUCTORS R.J.NEEDS
. 141
. 1 INTRODUCTION 141
. 2 QUANTUM MONTE CARLO METHODS 142
. 2.1 THE VMC METHOD 143
. 2.2 THE DMC METHOD 144
. 2.3 TRIAL WAVEFUNCTIONS 146
. 2.4 OPTIMIZATIORI OF TRIAL WAVEFUNCTIONS 147
. 2.5 QMC CALCULATIONS WITHIN PERIODIC BOUNDARY CONDITIONS 147
. 2.6 USING PSEUDOPOTENTIALS IN QMC CALCIILATIONS 148
. 3 DMC CALCULATIONS FOR EXCITED STATES 149
. 4 SOURCES OF ERROR IN DMC CALCULATIONS 149 5
APPLICATIONS OF QMC TO THE COHESIVE ENERGIES OFSOLIDS
. 150 6 APPLICATIONS
OF QMC TO DEFECTS IN SEMICONDUCTORS . 151
. 6.1 USING STRUCTURES FROM SIMPLER METHODS 151
. 6.2 SILICON SELF-INTERSTITIAL DEFECTS 152
6.2.1 DFT CALCULATIONS ON SILICON SELF-INTERSTITIALS . 154 6.2.2
QMC CALCULATIONS ON SILICON SELF-INTERSTITIALS . 156
. 6.3 NEUTRAL VACANCY IN DIAMOND 157 6.3.1
VMC AND DMC CALCULATIONS ON THE NEUTRAL VACANCY INDIAMOND
. 157 6.4 SCHOTTKY DEFECTS IN
MAGNESIUM OXIDE . 158 7 CONCLUSIO NS
. 160 REFERENCES
. 161 INDEX
. 163 XI1
CONTENTS QUASIPARTICLE CALCULATIONS FOR POINT DEFECTS AT SEMICONDUCTOR
SURFACES . ARNO SCHINDLMAYR7 MATTHIAS
SCHEFFLER 165 . 1
INTRODUCTION 165 . 2 COMPUTATIONAL
METHODS 168 . 2.1 DENSITY-FUNCTIONAL
THEORY 168 . 2.2 MANY-BODY PERTURBATION THEORY
171 . 3 ELECTRONIC STRUCTURE OF DEFECT-FREE SURFACES
176 4 DEFECT STATES . 179
. 5 CHARGE-TRANSITION LEVELS 184
. 6 SUMMARY 187
REFERENCES . 188
INDEX . 190
MULTISCALE MODELING OF DEFECTS IN SEMICONDUCTORS: A NOVEL
MOLECULAR-DYNAMICS SCHEME GABOR CS&NYI7 GIANPIETRO MORAS. JAMES R .
KERMODE. MICHAEL C . PAYNE. ALISON MAINWOOD. ALESSANDRO DE VITA
. 193 . 1
INTRODUCTION 193 . 2
AHYBRIDVIEW 194 . 3 HYBRID
SIMULATION 197 4 THELOTFSCHEME
. 200
. 5 APPLICATIONS 203
. 6 SUMMARY 210
REFERENCES . 210
INDEX . 211
EMPIRICAL MOLECULAR DYNAMICS: POSSIBILITIES. REQUIREMENTS. AND
LIMITATIONS KURT SCHEERSCHMIDT
. 213 . 1
INTRODUCTION: WHY EMPIRICAL MOLECULAR DYNAMICS? 213 . 2
EMPIRICAL MOLECULAR DYNAMICS: BASIC CONCEPTS 216 2.1 NEWTONIAN EQUATIONS
AND NUMERICAL INTEGRATION . 216 . 2.2 PARTICLE
MECHANICS AND NONEQUILIBRIUM SYSTEMS 218 . 2.3 BOUNDARY
CONDITIONS AND SYSTEM CONTROL 220 . 2.4 MANY-BODY EMPIRICAL
POTENTIALS AND FORCE FIELDS 221 . 2.5
DETERMINATION OF PROPERTIES 224 . 3 EXTENSIONS OF THE
EMPIRICAL MOLECULAR DYNAMICS 225 . 3.1 MODIFIED BOUNDARY
CONDITIONS: ELASTIC EMBEDDING 225 . 3.2 TIGHT-BINDING-BASED
ANALYTIC BOND-ORDER POTENTIALS 227
. 4 APPLICATIONS 230
. 4.1 QUANTUM DOTS: RELAXATION. REORDERING. AND STABILITY 231 4.2
BONDED INTERFACES: TAILORING ELECTRONIC .
OR MECHANICAL PROPERTIES? 233 . 5
CONCLUSIONS AND OUTLOOK 236 CONTENTS XI11 REFERENCES
. 237
. INDEX 241
DEFECTS IN AMORPHOUS SEMICONDUCTORS: AMORPHOUS SILICON
. D.A. DRABOLD. T.A. ABTEW 245
. 1 INTRODIICTION 245
. 2 AMORPHOUS SEMICONDUCTORS 246
. 3 DEFECTS IN AMORPHOUS SEMICONDUCTORS 248
. 3.1 DEFINITION OF DEFECT 248
. 3.2 LONG-TIME DYNARNICS AND DEFECT EQUILIBRIA 250
. 3.3 ELECTRONIC ASPECTS OF ANIORPHOUS SEMICONDUCTORS 250
. 3.4 ELECTRON CORRELATION ENERGY: ELECTRON-ELECTRON EFFECTS 252
. 4 MODELING AMORPHOUS SEMICONDUCTORS 253
. 4.1 FORMING STRUCTURAL MODELS 253
. 4.2 INTERATOMIC POTENTIALS 255 4.3
LORE OF APPROXIMATIONS IN DENSITY-FUNCTIONAL CALCULATIOM . . 255
. 4.4 THE ELECTRON-LATTICE INTERACTION 257
. 5 DEFECTS IN AMORPHOUS SILICON 258
REFERENCES . 264
. INDEX 266
LIGHT INDUCED EFFECTS IN AMORPHOUS AND GLASSY SOLIDS
. S . I . SIMDYANKIN. S . R . ELLIOTT
269 1 PHOTOINDUCED METASTABILITY IN AMORPHOUS SOLIDS: AN
. EXPERIMENTALSURVEY 269
. 1.1 INTRODUCTION 269
. 1.2 PHOTOINDUCED EFFECTS IN CHALCOGENIDE GLASSES 271 2
THEORETICAL STUDIES OF PHOTOINDUCED EXCITATIONS
. IN AMORPHOUS MATERIALS 272 2.1
APPLICATION OF THE DENSITY-FUNCTIONAL-BASED TIGHT-BINDING
. METHOD TO THE CASE OF AMORPHOUS AS2S3 273 REFERENCES
. 283 INDEX
. 285
. INDEX 287 |
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| id | DE-604.BV022260581 |
| illustrated | Illustrated |
| index_date | 2024-07-02T16:42:41Z |
| indexdate | 2024-07-09T20:53:34Z |
| institution | BVB |
| isbn | 3540334009 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015471230 |
| oclc_num | 255526216 |
| open_access_boolean | |
| owner | DE-703 DE-11 |
| owner_facet | DE-703 DE-11 |
| physical | XIII, 295 S. Ill., graph. Darst. |
| publishDate | 2007 |
| publishDateSearch | 2007 |
| publishDateSort | 2007 |
| publisher | Springer |
| record_format | marc |
| series | Topics in applied physics |
| series2 | Topics in applied physics |
| spelling | Theory of defects in semiconductors with 15 tables David A. Drabold ; ... (ed.) Berlin [u.a.] Springer 2007 XIII, 295 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Topics in applied physics 104 Literaturangaben Halbleiter - Gitterbaufehler Semiconductors Defects Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Gitterbaufehler (DE-588)4125030-8 s DE-604 Drabold, David A. edt Topics in applied physics 104 (DE-604)BV008007504 104 text/html http://deposit.dnb.de/cgi-bin/dokserv?id=2784317&prov=M&dok_var=1&dok_ext=htm Inhaltstext OEBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015471230&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Theory of defects in semiconductors with 15 tables Topics in applied physics Halbleiter - Gitterbaufehler Semiconductors Defects Gitterbaufehler (DE-588)4125030-8 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4125030-8 (DE-588)4022993-2 |
| title | Theory of defects in semiconductors with 15 tables |
| title_auth | Theory of defects in semiconductors with 15 tables |
| title_exact_search | Theory of defects in semiconductors with 15 tables |
| title_exact_search_txtP | Theory of defects in semiconductors with 15 tables |
| title_full | Theory of defects in semiconductors with 15 tables David A. Drabold ; ... (ed.) |
| title_fullStr | Theory of defects in semiconductors with 15 tables David A. Drabold ; ... (ed.) |
| title_full_unstemmed | Theory of defects in semiconductors with 15 tables David A. Drabold ; ... (ed.) |
| title_short | Theory of defects in semiconductors |
| title_sort | theory of defects in semiconductors with 15 tables |
| title_sub | with 15 tables |
| topic | Halbleiter - Gitterbaufehler Semiconductors Defects Gitterbaufehler (DE-588)4125030-8 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Halbleiter - Gitterbaufehler Semiconductors Defects Gitterbaufehler Halbleiter |
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| volume_link | (DE-604)BV008007504 |
| work_keys_str_mv | AT drabolddavida theoryofdefectsinsemiconductorswith15tables |