Verfügbarkeit: Heteroepitaxy of semiconductors

Heteroepitaxy of semiconductors: theory, growth, and characterization

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	Ayers, John E. (VerfasserIn)
Format:	Buch
Sprache:	English
Veröffentlicht:	Boca Raton [u.a.] CRC Press 2007
Schlagworte:	Compound semiconductors Epitaxy Heteroepitaxie Halbleiter
Online-Zugang:	Publisher description Inhaltsverzeichnis
Beschreibung:	455 S. Ill., graph. Darst.
ISBN:	0849371953

Internformat

MARC


LEADER	00000nam a2200000zc 4500
001	BV022244317
003	DE-604
005	20101011
007	t
008	070129s2007 xxuad\|\| \|\|\|\| 00\|\|\| eng d
010			\|a 2006050560
020			\|a 0849371953 \|9 0-8493-7195-3
035			\|a (OCoLC)70878051
035			\|a (DE-599)BVBBV022244317
040			\|a DE-604 \|b ger \|e aacr
041	0		\|a eng
044			\|a xxu \|c US
049			\|a DE-703 \|a DE-20 \|a DE-91 \|a DE-384
050		0	\|a QC611.8.C64
082	0		\|a 537.6/22
084			\|a UP 7550 \|0 (DE-625)146434: \|2 rvk
084			\|a ELT 280f \|2 stub
100	1		\|a Ayers, John E. \|e Verfasser \|4 aut
245	1	0	\|a Heteroepitaxy of semiconductors \|b theory, growth, and characterization \|c John E. Ayers
264		1	\|a Boca Raton [u.a.] \|b CRC Press \|c 2007
300			\|a 455 S. \|b Ill., graph. Darst.
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
650		4	\|a Compound semiconductors
650		4	\|a Epitaxy
650	0	7	\|a Heteroepitaxie \|0 (DE-588)4260178-2 \|2 gnd \|9 rswk-swf
650	0	7	\|a Halbleiter \|0 (DE-588)4022993-2 \|2 gnd \|9 rswk-swf
689	0	0	\|a Halbleiter \|0 (DE-588)4022993-2 \|D s
689	0	1	\|a Heteroepitaxie \|0 (DE-588)4260178-2 \|D s
689	0		\|5 DE-604
856	4		\|u http://www.loc.gov/catdir/enhancements/fy0665/2006050560-d.html \|3 Publisher description
856	4	2	\|m HBZ Datenaustausch \|q application/pdf \|u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015455200&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA \|3 Inhaltsverzeichnis
999			\|a oai:aleph.bib-bvb.de:BVB01-015455200

Datensatz im Suchindex

_version_	1804136237581205504
adam_text	CONTENTS 1 INTRODUCTION .....................................................................................1 2 PROPERTIES OF SEMICONDUCTORS........................................................7 2.1 INTRODUCTION....................................................................................................7 2.2 CRYSTALLOGRAPHIC PROPERTIES.........................................................................7 2.2.1 THE DIAMOND STRUCTURE....................................................................8 2.2.2 THE ZINC BLENDE STRUCTURE...............................................................8 2.2.3 THE WURTZITE STRUCTURE.....................................................................9 2.2.4 SILICON CARBIDE.................................................................................10 2.2.5 MILLER INDICES IN CUBIC CRYSTALS...................................................12 2.2.6 MILLER-BRAVAIS INDICES IN HEXAGONAL CRYSTALS...........................12 2.2.7 ORIENTATION EFFECTS...........................................................................14 2.2.7.1 DIAMOND SEMICONDUCTORS...............................................14 2.2.7.2 ZINC BLENDE SEMICONDUCTORS..........................................15 2.2.73 WURTZITE SEMICONDUCTORS................................................16 2.2.7A HEXAGONAL SILICON CARBIDE..............................................17 2.3 LATTICE CONSTANTS AND THERMAL EXPANSION COEFFICIENTS.......................17 2.4 ELASTIC PROPERTIES..........................................................................................19 2.4.1 HOOKE S LAW....................................................................................20 2.4.1.1 HOOKE S LAW FOR ISOTROPIC MATERIALS.............................22 2.4.1.2 CUBIC CRYSTALS...................................................................22 2.4.1.3 HEXAGONAL CRYSTALS...........................................................24 2.4.2 THE ELASTIC MODULI..........................................................................27 2.4.2.1 CUBIC CRYSTALS...................................................................28 2.4.2.2 HEXAGONAL CRYSTALS...........................................................28 2.4.3 BIAXIAL STRESSES AND TETRAGONAL DISTORTION..................................30 2.4.4 STRAIN ENERGY....................................................................................31 2.5 SURFACE FREE ENERGY.....................................................................................32 2.6 DISLOCATIONS...................................................................................................36 2.6.1 SCREW DISLOCATIONS..........................................................................37 2.6.2 EDGE DISLOCATIONS............................................................................38 2.6.3 SLIP SYSTEMS .....................................................................................38 2.6.4 DISLOCATIONS IN DIAMOND AND ZINC BLENDE CRYSTALS.................41 2.6.4.1 THREADING DISLOCATIONS IN DIAMOND AND ZINC BLENDE CRYSTALS..................................................................43 2.6.4.2 MISFIT DISLOCATIONS IN DIAMOND AND ZINC BLENDE CRYSTALS...............................................................................44 2.6.5 DISLOCATIONS IN WURTZITE CRYSTALS.................................................48 2.6.5.1 THREADING DISLOCATIONS IN WURTZITE CRYSTALS...............48 2 . 6 . 5.2 MISFIT DISLOCATIONS IN WURTZITE CRYSTALS.......................49 2.6.6 DISLOCATIONS IN HEXAGONAL SIC......................................................51 2.6.6.1 THREADING DISLOCATIONS IN HEXAGONAL SIC....................51 2.6.7 STRAIN FIELDS AND LINE ENERGIES OF DISLOCATIONS........................51 2.6.7.1 SCREW DISLOCATION..............................................................52 2.6.7.2 EDGE DISLOCATION...............................................................54 2 . 6.73 MIXED DISLOCATIONS...........................................................55 2.6.7.4 FRANK S RULE.......................................................................55 2.67.5 HOLLOW-CORE DISLOCATIONS (MICROPIPES).......................56 2.6.8 FORCES ON DISLOCATIONS....................................................................56 2.6.9 DISLOCATION MOTION..........................................................................57 2.6.10 ELECTRONIC PROPERTIES OF DISLOCATIONS...........................................58 2.6.10.1 DIAMOND AND ZINC BLENDE SEMICONDUCTORS................58 2.7 PLANAR DEFECTS...............................................................................................61 2.7.1 STACKING FAULTS.................................................................................61 2.7.2 TWINS.................................................................................................64 2.7.3 INVERSION DOMAIN BOUNDARIES (IDBS)..........................................65 PROBLEMS.................................................................................................................67 REFERENCES...............................................................................................................68 3 HETEROEPITAXIAL GROWTH................................................................75 3.1 INTRODUCTION..................................................................................................75 3.2 VAPOR PHASE EPITAXY (VPE)........................................................................76 3.2.1 VPE MECHANISMS AND GROWTH RATES...........................................76 3.2.2 HYDRODYNAMIC CONSIDERATIONS.....................................................79 3.2.3 VAPOR PHASE EPITAXIAL REACTORS....................................................81 3.2.4 METALORGANIC VAPOR PHASE EPITAXY (MOVPE)............................85 3.3 MOLECULAR BEAM EPITAXY (MBE)................................................................88 3.4 SILICON, GERMANIUM, AND SI^GE* ALLOYS.................................................92 3.5 SILICON CARBIDE.............................................................................................94 3.6 III-ARSENIDES, ILL-PHOSPHIDES, AND IH-ANTIMONIDES ..............................95 3.7 ILL-NITRIDES....................................................................................................97 3.8 II-VI SEMICONDUCTORS..................................................................................98 3.9 CONCLUSION....................................................................................................99 PROBLEMS...............................................................................................................100 REFERENCES.............................................................................................................100 4 SURFACE AND CHEMICAL CONSIDERATIONS IN HETEROEPITAXY.......105 4.1 INTRODUCTION................................................................................................105 4.2 SURFACE RECONSTRUCTIONS............................................................................106 4.2.1 WOOD S NOTATION FOR RECONSTRUCTED SURFACES...........................108 4.2.2 EXPERIMENTAL OBSERVATIONS.........................................................109 4.2.2.1 SI (001) SURFACE................................................................109 4.2.2.2 SI (111) SURFACE................................................................110 4.2.2.3 GE (111) SURFACE...............................................................ILL 4.2.2A 6H-SIC (0001) SURFACE....................................................ILL 42.2.5 3C-SIC (001).....................................................................112 4.2.2.6 3C-SIC (111)......................................................................112 4.2.2.7 GAN (0001).......................................................................113 4.2.2.8 ZINC BLENDE GAN (001)...................................................113 4.2.2.9 GAAS(OOL)........................................................................113 4.2.2.10 INP (001)............................................................................113 4.2.2.11 SAPPHIRE (0001)................................................................114 4.2.3 SURFACE RECONSTRUCTION AND HETEROEPITAXY..............................114 4.2.3.1 INVERSION DOMAIN BOUNDARIES (IDBS).........................114 4.2.3.2 HETEROEPITAXY OF POLAR SEMICONDUCTORS WITH DIFFERENT IONICITIES..........................................................115 4.3 NUCLEATION ...................................................................................................117 4.3.1 HOMOGENEOUS NUCLEATION ...........................................................117 4.3.2 HETEROGENEOUS NUCLEATION ..........................................................120 4.3.2.1 MACROSCOPIC MODEL FOR HETEROGENEOUS NUCLEATION ........................................................................120 4.3.2.2 ATOMISTIC MODEL..............................................................122 4.3.2.3 VICINAL SUBSTRATES.................... 125 4.4 GROWTH MODES...........................................................................................125 4.4.1 GROWTH MODES IN EQUILIBRIUM...................................................127 4.4.1.1 REGIME I: (* J)..............................................................130 4.4.1.2 REGIME II: (FIJ * 2 )....................................................131 4.4.1.3 REGIME III: (E 2 * 3 )...................................................132 4.4.1.4 REGIME IV: (* E 3 )...........................................................132 4.4.2 GROWTH MODES AND KINETIC CONSIDERATIONS.............................132 4.5 NUCLEATION LAYERS......................................................................................138 4.5.1 NUCLEATION LAYERS FOR GAN ON SAPPHIRE..................................139 4.6 SURFACTANTS IN HETEROEPITAXY...................................................................140 4.6.1 SURFACTANTS AND GROWTH MODE....................................................140 4.6.2 SURFACTANTS AND ISLAND SHAPE......................................................142 4.6.3 SURFACTANTS AND MISFIT DISLOCATIONS...........................................142 4.6.4 SURFACTANTS AND ORDERING IN INGAP...........................................143 4.7 QUANTUM DOTS AND SELF-ASSEMBLY.........................................................143 4.7.1 TOPOGRAPHICALLY GUIDED ASSEMBLY OF QUANTUM DOTS...........144 4.7.2 STRESSOR-GUIDED ASSEMBLY OF QUANTUM DOTS..........................145 4.7.3 VERTICAL ORGANIZATION OF QUANTUM DOTS...................................147 4.7.4 PRECISION LATERAL PLACEMENT OF QUANTUM DOTS........................149 PROBLEMS...............................................................................................................150 REFERENCES.............................................................................................................151 5 MISMATCHED HETEROEPITAXIAL GROWTH AND STRAIN RELAXATION....................................................................................161 5.1 INTRODUCTION................................................................................................161 5.2 PSEUDOMORPHIC GROWTH AND TIRE CRITICAL LAYER THICKNESS................163 5.2.1 MATTHEWS AND BLAKESLEE FORCE BALANCE MODEL........................165 5.2.2 MATTHEWS ENERGY CALCULATION.....................................................166 5.2.3 VAN DER MERWE MODEL..................................................................168 5.2.4 PEOPLE AND BEAN MODEL...............................................................169 5.2.5 EFFECT OF TIRE SIGN OF MISMATCH....................................................171 5.2.6 CRITICAL LAYER THICKNESS IN ISLANDS............................................173 5.3 DISLOCATION SOURCES...................................................................................175 5.3.1 HOMOGENEOUS NUCLEATION OF DISLOCATIONS...............................177 5.3.2 HETEROGENEOUS NUCLEATION OF DISLOCATIONS..............................179 5.3.3 DISLOCATION MULTIPLICATION...........................................................179 5.3.3.1 FRANK-READ SOURCE.........................................................180 5.3.3.2 SPIRAL SOURCE....................................................................185 5.3.3.3 HAGEN-STRUNK MULTIPLICATION.......................................187 5.4 INTERACTIONS BETWEEN MISFIT DISLOCATIONS...............................................189 5.5 LATTICE RELAXATION MECHANISMS...............................................................191 5.5.1 BENDING OF SUBSTRATE DISLOCATIONS..............................................191 5.5.2 GLIDE OF HALF-LOOPS......................................................................194 5.5.3 INJECTION OF EDGE DISLOCATIONS AT ISLAND BOUNDARIES..............194 5.5.4 NUCLEATION OF SHOCKLEY PARTIAL DISLOCATIONS.............................196 5.5.5 CRACKING..........................................................................................199 5.6 QUANTITATIVE MODELS FOR LATTICE RELAXATION..........................................199 5.6.1 MATTHEWS AND BLAKESLEE EQUILIBRIUM MODEL...........................200 5.6.2 MATTHEWS, MADER, AND LIGHT KINETIC MODEL............................201 5.6.3 DODSON AND TSAO KINETIC MODEL................................................203 5.7 LATTICE RELAXATION ON VICINAL SUBSTRATES: CRYSTALLOGRAPHIC LILTING OF HETEROEPITAXIAL LAYERS............................................................205 5.7.1 NAGAI MODEL..................................................................................205 5.7.2 OLSEN AND SMITH MODEL...............................................................207 5.7.3 AYERS, GHANDHI, AND SCHOWALTER MODEL...................................207 5.7.4 RIESZ MODEL....................................................................................215 5.7.5 VICINAL EPITAXY OF DI-NITRIDE SEMICONDUCTORS.........................218 5.7.6 VICINAL HETEROEPITAXY WITH A CHANGE IN STACKING SEQUENCE.........................................................................................220 5.7.7 VICINAL HETEROEPITAXY WITH MULTILAYER STEPS...........................221 5.7.8 TILTING IN GRADED LAYERS: LEGOUES, MOONEY, AND CHU MODEL..............................................................................................224 5.8 LATTICE RELAXATION IN GRADED LAYERS......................................................227 5.8.1 CRITICAL THICKNESS IN A LINEARLY GRADED LAYER........................227 5.8.2 EQUILIBRIUM STRAIN GRADIENT IN A GRADED LAYER......................228 5.8.3 THREADING DISLOCATION DENSITY IN A GRADED LAYER.................228 5.8.3.1 ABRAHAMS ET AL. MODEL..................................................229 5.8.3.2 FITZGERALD ET AL. MODEL...................................................230 5.9 LATTICE RELAXATION IN SUPERLATTICES AND MULTILAYER STRUCTURES...........231 5.10 DISLOCATION COALESCENCE, ANNIHILATION, AND REMOVAL IN RELAXED HETEROEPITAXIAL LAYERS...............................................................233 5.11 THERMAL STRAIN ............................................................................................238 5.12 CRACKING IN THICK FILMS...........................................................................239 PROBLEMS...............................................................................................................242 REFERENCES.............................................................................................................243 6 CHARACTERIZATION OF HETEROEPITAXIAL LAYERS.............................249 6.1 INTRODUCTION................................................................................................249 6.2 X-RAY DIFFRACTION.......................................................................................250 6.2.1 POSITIONS OF DIFFRACTED BEAMS.....................................................251 6.2.1.1 THE BRAGG EQUATION........................................................251 6.2.1.2 THE RECIPROCAL LATTICE AND THE VON LAUE FORMULATION FOR DIFFRACTION...........................................253 6.2.1.3 THE EWALD SPHERE...........................................................255 6.2.2 INTENSITIES OF DIFFRACTED BEAMS...................................................255 6.2.2.1 SCATTERING OF X-RAYS BY A SINGLE ELECTRON..................256 6.2.2.2 SCATTERING OF X-RAYS BY AN ATOM.................................257 6.2.2.3 SCATTERING OF X-RAYS BY A UNIT CELL.............................258 6.2.2.4 INTENSITIES OF DIFFRACTION PROFILES..................................259 6.2.3 DYNAMICAL DIFFRACTION THEORY....................................................260 6.2.3.1 INTRINSIC DIFFRACTION PROFILES FOR PERFECT CRYSTALS.............................................................................261 6.2.3.2 INTRINSIC WIDTHS OF DIFFRACTION PROFILES.......................262 6.2.3.3 EXTINCTION DEPTH AND ABSORPTION DEPTH....................264 6.2.4 X-RAY DIFFRACTOMETERS..................................................................265 6.2.4.1 DOUBLE-CRYSTAL DIFFRACTOMETER.............. 267 6.2.4.2 BARTELS DOUBLE-AXIS DIFFRACTOMETER.............................270 6.2.4.3 TRIPLE-AXIS DIFFRACTOMETER.............................................271 6.3 ELECTRON DIFFRACTION...................................................................................272 6.3.1 REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED)..........273 6.3.2 LOW-ENERGY ELECTRON DIFFRACTION (LEED).................................274 6.4 MICROSCOPY..................................................................................................275 6.4.1 OPTICAL MICROSCOPY.......................................................................276 6.4.2 TRANSMISSION ELECTRON MICROSCOPY (TEM)................................276 6.4.3 SCANNING TUNNELING MICROSCOPY (STM)....................................279 6.4.4 ATOMIC FORCE MICROSCOPY (AFM)...............................................281 6.5 CRYSTALLOGRAPHIC ETCHING TECHNIQUES.....................................................282 6.6 PHOTOLUMINESCENCE....................................................................................284 6.7 GROWTH RATE AND LAYER THICKNESS.........................................................288 6.8 COMPOSITION AND STRAIN............................................................................290 6.8.1 BINARY HETEROEPITAXIAL LAYER......................................................291 6.8.2 TERNARY HETEROEPITAXIAL LAYER....................................................293 6.8.3 QUATERNARY HETEROEPITAXIAL LAYER.............................................297 6.9 DETERMINATION OF CRITICAL LAYER THICKNESS...........................................297 6.9.1 EFFECT OF FINITE RESOLUTION...........................................................299 6.9.2 X-RAY DIFFRACTION...........................................................................301 6.9.2.1 STRAIN METHOD..................................................................301 6.9.2.2 FWHM METHOD...............................................................307 6.9.3 X-RAY TOPOGRAPHY........................................................................312 6.9.4 TRANSMISSION ELECTRON MICROSCOPY.............................................313 6.9.5 ELECTRON BEAM-INDUCED CURRENT (EBIC)....................................315 6.9.6 PHOTOLUMINESCENCE........................................................................315 6.9.7 PHOTOLUMINESCENCE MICROSCOPY..................................................317 6.9.8 REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED)..........319 6.9.9 SCANNING TUNNELING MICROSCOPY (STM)....................................321 6.9.10 RUTHERFORD BACKSCATTERING (RBS)................................................323 6.10 CRYSTAL ORIENTATION....................... 324 6.11 DEFECT TYPES AND DENSITIES......................................................................326 6.11.1 TRANSMISSION ELECTRON MICROSCOPY.............................................327 6.11.2 CRYSTALLOGRAPHIC ETCHING.............................................................329 6.11.3 X-RAY DIFFRACTION...........................................................................331 6.12 MULTILAYERED STRUCTURES AND SUPERLATTICES............................................338 6.13 GROWTH MODE.............................................................................................342 PROBLEMS...............................................................................................................345 REFERENCES.............................................................................................................347 7 DEFECT ENGINEERING IN HETEROEPITAXIAL LAYERS........................355 7.1 INTRODUCTION................................................................................................355 7.2 BUFFER LAYER APPROACHES..........................................................................355 7.2.1 UNIFORM BUFFER LAYERS AND VIRTUAL SUBSTRATES........................355 7.2.2 GRADED BUFFER LAYERS...................................................................359 7.2.3 SUPERLATTICE BUFFER LAYERS............................................................367 7.3 REDUCED AREA GROWTH USING PATTERNED SUBSTRATES.............................372 7.4 PATTERNING AND ANNEALING........................................................................376 7.5 EPITAXIAL LATERAL OVERGROWTH (ELO)......................................................381 7.6 PENDEO-EPITAXY..........................................................................................389 7.7 NANOHETEROEPITAXY....................................................................................391 7.7.1 NANOHETEROEPITAXY ON A NONCOMPLIANT SUBSTRATE..................392 7.7.2 NANOHETEROEPITAXY WITH A COMPLIANT SUBSTRATE.....................395 7.8 PLANAR COMPLIANT SUBSTRATES...................................................................399 7.8.1 COMPLIANT SUBSTRATE THEORY.......................................................400 7.8.2 COMPLIANT SUBSTRATE IMPLEMENTATION........................................403 7.8.2.1 CANTILEVERED MEMBRANES...............................................404 7.8.2.2 SILICON-ON-INSULATOR (SOI) AS A COMPLIANT SUBSTRATE...........................................................................406 7.8.2.3 TWIST-BONDED COMPLIANT SUBSTRATES...........................411 7.9 FREE-STANDING SEMICONDUCTOR FILMS.......................................................414 7.10 CONCLUSION..................................................................................................415 PROBLEMS...............................................................................................................416 REFERENCES.............................................................................................................416 APPENDIX A: BANDGAP ENGINEERING DIAGRAMS.................................421 REFERENCES.............................................................................................................422 APPENDIX B: LATTICE CONSTANTS AND COEFFICIENTS OF THERMAL EXPANSION..............................................................................423 REFERENCES.............................................................................................................426 APPENDIX C: ELASTIC CONSTANTS..........................................................427 REFERENCES.............................................................................................................430 APPENDIX D: CRITICAL LAYER THICKNESS.............................................431 REFERENCES.............................................................................................................431 APPENDIX E: CRYSTALLOGRAPHIC ETCHES...............................................433 REFERENCES.............................................................................................................434 APPENDIX F: TABLES FOR X-RAY DIFFRACTION.......................................437 INDEX 441
adam_txt	CONTENTS 1 INTRODUCTION .1 2 PROPERTIES OF SEMICONDUCTORS.7 2.1 INTRODUCTION.7 2.2 CRYSTALLOGRAPHIC PROPERTIES.7 2.2.1 THE DIAMOND STRUCTURE.8 2.2.2 THE ZINC BLENDE STRUCTURE.8 2.2.3 THE WURTZITE STRUCTURE.9 2.2.4 SILICON CARBIDE.10 2.2.5 MILLER INDICES IN CUBIC CRYSTALS.12 2.2.6 MILLER-BRAVAIS INDICES IN HEXAGONAL CRYSTALS.12 2.2.7 ORIENTATION EFFECTS.14 2.2.7.1 DIAMOND SEMICONDUCTORS.14 2.2.7.2 ZINC BLENDE SEMICONDUCTORS.15 2.2.73 WURTZITE SEMICONDUCTORS.16 2.2.7A HEXAGONAL SILICON CARBIDE.17 2.3 LATTICE CONSTANTS AND THERMAL EXPANSION COEFFICIENTS.17 2.4 ELASTIC PROPERTIES.19 2.4.1 HOOKE'S LAW.20 2.4.1.1 HOOKE'S LAW FOR ISOTROPIC MATERIALS.22 2.4.1.2 CUBIC CRYSTALS.22 2.4.1.3 HEXAGONAL CRYSTALS.24 2.4.2 THE ELASTIC MODULI.27 2.4.2.1 CUBIC CRYSTALS.28 2.4.2.2 HEXAGONAL CRYSTALS.28 2.4.3 BIAXIAL STRESSES AND TETRAGONAL DISTORTION.30 2.4.4 STRAIN ENERGY.31 2.5 SURFACE FREE ENERGY.32 2.6 DISLOCATIONS.36 2.6.1 SCREW DISLOCATIONS.37 2.6.2 EDGE DISLOCATIONS.38 2.6.3 SLIP SYSTEMS .38 2.6.4 DISLOCATIONS IN DIAMOND AND ZINC BLENDE CRYSTALS.41 2.6.4.1 THREADING DISLOCATIONS IN DIAMOND AND ZINC BLENDE CRYSTALS.43 2.6.4.2 MISFIT DISLOCATIONS IN DIAMOND AND ZINC BLENDE CRYSTALS.44 2.6.5 DISLOCATIONS IN WURTZITE CRYSTALS.48 2.6.5.1 THREADING DISLOCATIONS IN WURTZITE CRYSTALS.48 2 . 6 . 5.2 MISFIT DISLOCATIONS IN WURTZITE CRYSTALS.49 2.6.6 DISLOCATIONS IN HEXAGONAL SIC.51 2.6.6.1 THREADING DISLOCATIONS IN HEXAGONAL SIC.51 2.6.7 STRAIN FIELDS AND LINE ENERGIES OF DISLOCATIONS.51 2.6.7.1 SCREW DISLOCATION.52 2.6.7.2 EDGE DISLOCATION.54 2 . 6.73 MIXED DISLOCATIONS.55 2.6.7.4 FRANK'S RULE.55 2.67.5 HOLLOW-CORE DISLOCATIONS (MICROPIPES).56 2.6.8 FORCES ON DISLOCATIONS.56 2.6.9 DISLOCATION MOTION.57 2.6.10 ELECTRONIC PROPERTIES OF DISLOCATIONS.58 2.6.10.1 DIAMOND AND ZINC BLENDE SEMICONDUCTORS.58 2.7 PLANAR DEFECTS.61 2.7.1 STACKING FAULTS.61 2.7.2 TWINS.64 2.7.3 INVERSION DOMAIN BOUNDARIES (IDBS).65 PROBLEMS.67 REFERENCES.68 3 HETEROEPITAXIAL GROWTH.75 3.1 INTRODUCTION.75 3.2 VAPOR PHASE EPITAXY (VPE).76 3.2.1 VPE MECHANISMS AND GROWTH RATES.76 3.2.2 HYDRODYNAMIC CONSIDERATIONS.79 3.2.3 VAPOR PHASE EPITAXIAL REACTORS.81 3.2.4 METALORGANIC VAPOR PHASE EPITAXY (MOVPE).85 3.3 MOLECULAR BEAM EPITAXY (MBE).88 3.4 SILICON, GERMANIUM, AND SI^GE* ALLOYS.92 3.5 SILICON CARBIDE.94 3.6 III-ARSENIDES, ILL-PHOSPHIDES, AND IH-ANTIMONIDES .95 3.7 ILL-NITRIDES.97 3.8 II-VI SEMICONDUCTORS.98 3.9 CONCLUSION.99 PROBLEMS.100 REFERENCES.100 4 SURFACE AND CHEMICAL CONSIDERATIONS IN HETEROEPITAXY.105 4.1 INTRODUCTION.105 4.2 SURFACE RECONSTRUCTIONS.106 4.2.1 WOOD'S NOTATION FOR RECONSTRUCTED SURFACES.108 4.2.2 EXPERIMENTAL OBSERVATIONS.109 4.2.2.1 SI (001) SURFACE.109 4.2.2.2 SI (111) SURFACE.110 4.2.2.3 GE (111) SURFACE.ILL 4.2.2A 6H-SIC (0001) SURFACE.ILL 42.2.5 3C-SIC (001).112 4.2.2.6 3C-SIC (111).112 4.2.2.7 GAN (0001).113 4.2.2.8 ZINC BLENDE GAN (001).113 4.2.2.9 GAAS(OOL).113 4.2.2.10 INP (001).113 4.2.2.11 SAPPHIRE (0001).114 4.2.3 SURFACE RECONSTRUCTION AND HETEROEPITAXY.114 4.2.3.1 INVERSION DOMAIN BOUNDARIES (IDBS).114 4.2.3.2 HETEROEPITAXY OF POLAR SEMICONDUCTORS WITH DIFFERENT IONICITIES.115 4.3 NUCLEATION .117 4.3.1 HOMOGENEOUS NUCLEATION .117 4.3.2 HETEROGENEOUS NUCLEATION .120 4.3.2.1 MACROSCOPIC MODEL FOR HETEROGENEOUS NUCLEATION .120 4.3.2.2 ATOMISTIC MODEL.122 4.3.2.3 VICINAL SUBSTRATES. 125 4.4 GROWTH MODES.125 4.4.1 GROWTH MODES IN EQUILIBRIUM.127 4.4.1.1 REGIME I: (* J).130 4.4.1.2 REGIME II: (FIJ * 2 ).131 4.4.1.3 REGIME III: (E 2 * 3 ).132 4.4.1.4 REGIME IV: (* E 3 ).132 4.4.2 GROWTH MODES AND KINETIC CONSIDERATIONS.132 4.5 NUCLEATION LAYERS.138 4.5.1 NUCLEATION LAYERS FOR GAN ON SAPPHIRE.139 4.6 SURFACTANTS IN HETEROEPITAXY.140 4.6.1 SURFACTANTS AND GROWTH MODE.140 4.6.2 SURFACTANTS AND ISLAND SHAPE.142 4.6.3 SURFACTANTS AND MISFIT DISLOCATIONS.142 4.6.4 SURFACTANTS AND ORDERING IN INGAP.143 4.7 QUANTUM DOTS AND SELF-ASSEMBLY.143 4.7.1 TOPOGRAPHICALLY GUIDED ASSEMBLY OF QUANTUM DOTS.144 4.7.2 STRESSOR-GUIDED ASSEMBLY OF QUANTUM DOTS.145 4.7.3 VERTICAL ORGANIZATION OF QUANTUM DOTS.147 4.7.4 PRECISION LATERAL PLACEMENT OF QUANTUM DOTS.149 PROBLEMS.150 REFERENCES.151 5 MISMATCHED HETEROEPITAXIAL GROWTH AND STRAIN RELAXATION.161 5.1 INTRODUCTION.161 5.2 PSEUDOMORPHIC GROWTH AND TIRE CRITICAL LAYER THICKNESS.163 5.2.1 MATTHEWS AND BLAKESLEE FORCE BALANCE MODEL.165 5.2.2 MATTHEWS ENERGY CALCULATION.166 5.2.3 VAN DER MERWE MODEL.168 5.2.4 PEOPLE AND BEAN MODEL.169 5.2.5 EFFECT OF TIRE SIGN OF MISMATCH.171 5.2.6 CRITICAL LAYER THICKNESS IN ISLANDS.173 5.3 DISLOCATION SOURCES.175 5.3.1 HOMOGENEOUS NUCLEATION OF DISLOCATIONS.177 5.3.2 HETEROGENEOUS NUCLEATION OF DISLOCATIONS.179 5.3.3 DISLOCATION MULTIPLICATION.179 5.3.3.1 FRANK-READ SOURCE.180 5.3.3.2 SPIRAL SOURCE.185 5.3.3.3 HAGEN-STRUNK MULTIPLICATION.187 5.4 INTERACTIONS BETWEEN MISFIT DISLOCATIONS.189 5.5 LATTICE RELAXATION MECHANISMS.191 5.5.1 BENDING OF SUBSTRATE DISLOCATIONS.191 5.5.2 GLIDE OF HALF-LOOPS.194 5.5.3 INJECTION OF EDGE DISLOCATIONS AT ISLAND BOUNDARIES.194 5.5.4 NUCLEATION OF SHOCKLEY PARTIAL DISLOCATIONS.196 5.5.5 CRACKING.199 5.6 QUANTITATIVE MODELS FOR LATTICE RELAXATION.199 5.6.1 MATTHEWS AND BLAKESLEE EQUILIBRIUM MODEL.200 5.6.2 MATTHEWS, MADER, AND LIGHT KINETIC MODEL.201 5.6.3 DODSON AND TSAO KINETIC MODEL.203 5.7 LATTICE RELAXATION ON VICINAL SUBSTRATES: CRYSTALLOGRAPHIC LILTING OF HETEROEPITAXIAL LAYERS.205 5.7.1 NAGAI MODEL.205 5.7.2 OLSEN AND SMITH MODEL.207 5.7.3 AYERS, GHANDHI, AND SCHOWALTER MODEL.207 5.7.4 RIESZ MODEL.215 5.7.5 VICINAL EPITAXY OF DI-NITRIDE SEMICONDUCTORS.218 5.7.6 VICINAL HETEROEPITAXY WITH A CHANGE IN STACKING SEQUENCE.220 5.7.7 VICINAL HETEROEPITAXY WITH MULTILAYER STEPS.221 5.7.8 TILTING IN GRADED LAYERS: LEGOUES, MOONEY, AND CHU MODEL.224 5.8 LATTICE RELAXATION IN GRADED LAYERS.227 5.8.1 CRITICAL THICKNESS IN A LINEARLY GRADED LAYER.227 5.8.2 EQUILIBRIUM STRAIN GRADIENT IN A GRADED LAYER.228 5.8.3 THREADING DISLOCATION DENSITY IN A GRADED LAYER.228 5.8.3.1 ABRAHAMS ET AL. MODEL.229 5.8.3.2 FITZGERALD ET AL. MODEL.230 5.9 LATTICE RELAXATION IN SUPERLATTICES AND MULTILAYER STRUCTURES.231 5.10 DISLOCATION COALESCENCE, ANNIHILATION, AND REMOVAL IN RELAXED HETEROEPITAXIAL LAYERS.233 5.11 THERMAL STRAIN .238 5.12 CRACKING IN THICK FILMS.239 PROBLEMS.242 REFERENCES.243 6 CHARACTERIZATION OF HETEROEPITAXIAL LAYERS.249 6.1 INTRODUCTION.249 6.2 X-RAY DIFFRACTION.250 6.2.1 POSITIONS OF DIFFRACTED BEAMS.251 6.2.1.1 THE BRAGG EQUATION.251 6.2.1.2 THE RECIPROCAL LATTICE AND THE VON LAUE FORMULATION FOR DIFFRACTION.253 6.2.1.3 THE EWALD SPHERE.255 6.2.2 INTENSITIES OF DIFFRACTED BEAMS.255 6.2.2.1 SCATTERING OF X-RAYS BY A SINGLE ELECTRON.256 6.2.2.2 SCATTERING OF X-RAYS BY AN ATOM.257 6.2.2.3 SCATTERING OF X-RAYS BY A UNIT CELL.258 6.2.2.4 INTENSITIES OF DIFFRACTION PROFILES.259 6.2.3 DYNAMICAL DIFFRACTION THEORY.260 6.2.3.1 INTRINSIC DIFFRACTION PROFILES FOR PERFECT CRYSTALS.261 6.2.3.2 INTRINSIC WIDTHS OF DIFFRACTION PROFILES.262 6.2.3.3 EXTINCTION DEPTH AND ABSORPTION DEPTH.264 6.2.4 X-RAY DIFFRACTOMETERS.265 6.2.4.1 DOUBLE-CRYSTAL DIFFRACTOMETER. 267 6.2.4.2 BARTELS DOUBLE-AXIS DIFFRACTOMETER.270 6.2.4.3 TRIPLE-AXIS DIFFRACTOMETER.271 6.3 ELECTRON DIFFRACTION.272 6.3.1 REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED).273 6.3.2 LOW-ENERGY ELECTRON DIFFRACTION (LEED).274 6.4 MICROSCOPY.275 6.4.1 OPTICAL MICROSCOPY.276 6.4.2 TRANSMISSION ELECTRON MICROSCOPY (TEM).276 6.4.3 SCANNING TUNNELING MICROSCOPY (STM).279 6.4.4 ATOMIC FORCE MICROSCOPY (AFM).281 6.5 CRYSTALLOGRAPHIC ETCHING TECHNIQUES.282 6.6 PHOTOLUMINESCENCE.284 6.7 GROWTH RATE AND LAYER THICKNESS.288 6.8 COMPOSITION AND STRAIN.290 6.8.1 BINARY HETEROEPITAXIAL LAYER.291 6.8.2 TERNARY HETEROEPITAXIAL LAYER.293 6.8.3 QUATERNARY HETEROEPITAXIAL LAYER.297 6.9 DETERMINATION OF CRITICAL LAYER THICKNESS.297 6.9.1 EFFECT OF FINITE RESOLUTION.299 6.9.2 X-RAY DIFFRACTION.301 6.9.2.1 STRAIN METHOD.301 6.9.2.2 FWHM METHOD.307 6.9.3 X-RAY TOPOGRAPHY.312 6.9.4 TRANSMISSION ELECTRON MICROSCOPY.313 6.9.5 ELECTRON BEAM-INDUCED CURRENT (EBIC).315 6.9.6 PHOTOLUMINESCENCE.315 6.9.7 PHOTOLUMINESCENCE MICROSCOPY.317 6.9.8 REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED).319 6.9.9 SCANNING TUNNELING MICROSCOPY (STM).321 6.9.10 RUTHERFORD BACKSCATTERING (RBS).323 6.10 CRYSTAL ORIENTATION. 324 6.11 DEFECT TYPES AND DENSITIES.326 6.11.1 TRANSMISSION ELECTRON MICROSCOPY.327 6.11.2 CRYSTALLOGRAPHIC ETCHING.329 6.11.3 X-RAY DIFFRACTION.331 6.12 MULTILAYERED STRUCTURES AND SUPERLATTICES.338 6.13 GROWTH MODE.342 PROBLEMS.345 REFERENCES.347 7 DEFECT ENGINEERING IN HETEROEPITAXIAL LAYERS.355 7.1 INTRODUCTION.355 7.2 BUFFER LAYER APPROACHES.355 7.2.1 UNIFORM BUFFER LAYERS AND VIRTUAL SUBSTRATES.355 7.2.2 GRADED BUFFER LAYERS.359 7.2.3 SUPERLATTICE BUFFER LAYERS.367 7.3 REDUCED AREA GROWTH USING PATTERNED SUBSTRATES.372 7.4 PATTERNING AND ANNEALING.376 7.5 EPITAXIAL LATERAL OVERGROWTH (ELO).381 7.6 PENDEO-EPITAXY.389 7.7 NANOHETEROEPITAXY.391 7.7.1 NANOHETEROEPITAXY ON A NONCOMPLIANT SUBSTRATE.392 7.7.2 NANOHETEROEPITAXY WITH A COMPLIANT SUBSTRATE.395 7.8 PLANAR COMPLIANT SUBSTRATES.399 7.8.1 COMPLIANT SUBSTRATE THEORY.400 7.8.2 COMPLIANT SUBSTRATE IMPLEMENTATION.403 7.8.2.1 CANTILEVERED MEMBRANES.404 7.8.2.2 SILICON-ON-INSULATOR (SOI) AS A COMPLIANT SUBSTRATE.406 7.8.2.3 TWIST-BONDED COMPLIANT SUBSTRATES.411 7.9 FREE-STANDING SEMICONDUCTOR FILMS.414 7.10 CONCLUSION.415 PROBLEMS.416 REFERENCES.416 APPENDIX A: BANDGAP ENGINEERING DIAGRAMS.421 REFERENCES.422 APPENDIX B: LATTICE CONSTANTS AND COEFFICIENTS OF THERMAL EXPANSION.423 REFERENCES.426 APPENDIX C: ELASTIC CONSTANTS.427 REFERENCES.430 APPENDIX D: CRITICAL LAYER THICKNESS.431 REFERENCES.431 APPENDIX E: CRYSTALLOGRAPHIC ETCHES.433 REFERENCES.434 APPENDIX F: TABLES FOR X-RAY DIFFRACTION.437 INDEX 441
any_adam_object	1
any_adam_object_boolean	1
author	Ayers, John E.
author_facet	Ayers, John E.
author_role	aut
author_sort	Ayers, John E.
author_variant	j e a je jea
building	Verbundindex
bvnumber	BV022244317
callnumber-first	Q - Science
callnumber-label	QC611
callnumber-raw	QC611.8.C64
callnumber-search	QC611.8.C64
callnumber-sort	QC 3611.8 C64
callnumber-subject	QC - Physics
classification_rvk	UP 7550
classification_tum	ELT 280f
ctrlnum	(OCoLC)70878051 (DE-599)BVBBV022244317
dewey-full	537.6/22
dewey-hundreds	500 - Natural sciences and mathematics
dewey-ones	537 - Electricity and electronics
dewey-raw	537.6/22
dewey-search	537.6/22
dewey-sort	3537.6 222
dewey-tens	530 - Physics
discipline	Physik Elektrotechnik
discipline_str_mv	Physik Elektrotechnik
format	Book
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01608nam a2200433zc 4500</leader><controlfield tag="001">BV022244317</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20101011 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">070129s2007 xxuad\|\| \|\|\|\| 00\|\|\| eng d</controlfield><datafield tag="010" ind1=" " ind2=" "><subfield code="a">2006050560</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0849371953</subfield><subfield code="9">0-8493-7195-3</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)70878051</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV022244317</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">xxu</subfield><subfield code="c">US</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-20</subfield><subfield code="a">DE-91</subfield><subfield code="a">DE-384</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC611.8.C64</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6/22</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 7550</subfield><subfield code="0">(DE-625)146434:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 280f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ayers, John E.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Heteroepitaxy of semiconductors</subfield><subfield code="b">theory, growth, and characterization</subfield><subfield code="c">John E. Ayers</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boca Raton [u.a.]</subfield><subfield code="b">CRC Press</subfield><subfield code="c">2007</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">455 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Compound semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Epitaxy</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heteroepitaxie</subfield><subfield code="0">(DE-588)4260178-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Heteroepitaxie</subfield><subfield code="0">(DE-588)4260178-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2=" "><subfield code="u">http://www.loc.gov/catdir/enhancements/fy0665/2006050560-d.html</subfield><subfield code="3">Publisher description</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">HBZ Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015455200&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-015455200</subfield></datafield></record></collection>
id	DE-604.BV022244317
illustrated	Illustrated
index_date	2024-07-02T16:37:10Z
indexdate	2024-07-09T20:53:13Z
institution	BVB
isbn	0849371953
language	English
lccn	2006050560
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-015455200
oclc_num	70878051
open_access_boolean
owner	DE-703 DE-20 DE-91 DE-BY-TUM DE-384
owner_facet	DE-703 DE-20 DE-91 DE-BY-TUM DE-384
physical	455 S. Ill., graph. Darst.
publishDate	2007
publishDateSearch	2007
publishDateSort	2007
publisher	CRC Press
record_format	marc
spelling	Ayers, John E. Verfasser aut Heteroepitaxy of semiconductors theory, growth, and characterization John E. Ayers Boca Raton [u.a.] CRC Press 2007 455 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Compound semiconductors Epitaxy Heteroepitaxie (DE-588)4260178-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Heteroepitaxie (DE-588)4260178-2 s DE-604 http://www.loc.gov/catdir/enhancements/fy0665/2006050560-d.html Publisher description HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015455200&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Ayers, John E. Heteroepitaxy of semiconductors theory, growth, and characterization Compound semiconductors Epitaxy Heteroepitaxie (DE-588)4260178-2 gnd Halbleiter (DE-588)4022993-2 gnd
subject_GND	(DE-588)4260178-2 (DE-588)4022993-2
title	Heteroepitaxy of semiconductors theory, growth, and characterization
title_auth	Heteroepitaxy of semiconductors theory, growth, and characterization
title_exact_search	Heteroepitaxy of semiconductors theory, growth, and characterization
title_exact_search_txtP	Heteroepitaxy of semiconductors theory, growth, and characterization
title_full	Heteroepitaxy of semiconductors theory, growth, and characterization John E. Ayers
title_fullStr	Heteroepitaxy of semiconductors theory, growth, and characterization John E. Ayers
title_full_unstemmed	Heteroepitaxy of semiconductors theory, growth, and characterization John E. Ayers
title_short	Heteroepitaxy of semiconductors
title_sort	heteroepitaxy of semiconductors theory growth and characterization
title_sub	theory, growth, and characterization
topic	Compound semiconductors Epitaxy Heteroepitaxie (DE-588)4260178-2 gnd Halbleiter (DE-588)4022993-2 gnd
topic_facet	Compound semiconductors Epitaxy Heteroepitaxie Halbleiter
url	http://www.loc.gov/catdir/enhancements/fy0665/2006050560-d.html http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015455200&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
work_keys_str_mv	AT ayersjohne heteroepitaxyofsemiconductorstheorygrowthandcharacterization

Verfügbarkeit

Es ist kein Print-Exemplar vorhanden.

Fernleihe Bestellen Achtung: Nicht im THWS-Bestand! Inhaltsverzeichnis

MARC

Datensatz im Suchindex

Es ist kein Print-Exemplar vorhanden.

Ähnliche Einträge