Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
2005
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| Schlagworte: | |
| Online-Zugang: | kostenfrei http://darwin.bth.rwth-aachen.de/opus/volltexte/2006/1276/index.html http://d-nb.info/978673239/34 https://nbn-resolving.org/urn:nbn:de:hbz:82-opus-12769 |
| Beschreibung: | 1 Online-Ressource |
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Datensatz im Suchindex
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| discipline | Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Maschinenbau / Maschinenwesen Elektrotechnik / Elektronik / Nachrichtentechnik |
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| index_date | 2024-07-02T16:29:33Z |
| indexdate | 2024-07-09T20:52:42Z |
| institution | BVB |
| language | English |
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| publishDate | 2005 |
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| spelling | Bernát, Juraj 1978- Verfasser (DE-588)13136958X aut Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications vorgelegt von Juraj Bernát 2005 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Aachen, Techn. Hochsch., Diss., 2005 Langzeitarchivierung in Der Deutschen Bibliothek gewährleistet (DE-588)4113937-9 Hochschulschrift gnd-content ca. 28,7 MB http://darwin.bth.rwth-aachen.de/opus/volltexte/2006/1276/pdf/Bernat_Juraj.pdf Verlag kostenfrei http://darwin.bth.rwth-aachen.de/opus/volltexte/2006/1276/index.html Verlag http://d-nb.info/978673239/34 Langzeitarchivierung Nationalbibliothek https://nbn-resolving.org/urn:nbn:de:hbz:82-opus-12769 Resolving-System |
| spellingShingle | Bernát, Juraj 1978- Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications |
| subject_GND | (DE-588)4113937-9 |
| title | Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications |
| title_auth | Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications |
| title_exact_search | Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications |
| title_exact_search_txtP | Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications |
| title_full | Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications vorgelegt von Juraj Bernát |
| title_fullStr | Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications vorgelegt von Juraj Bernát |
| title_full_unstemmed | Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications vorgelegt von Juraj Bernát |
| title_short | Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications |
| title_sort | fabrication and characterisation of algan gan high electron mobility transistors for power applications |
| topic_facet | Hochschulschrift |
| url | http://darwin.bth.rwth-aachen.de/opus/volltexte/2006/1276/pdf/Bernat_Juraj.pdf http://darwin.bth.rwth-aachen.de/opus/volltexte/2006/1276/index.html http://d-nb.info/978673239/34 https://nbn-resolving.org/urn:nbn:de:hbz:82-opus-12769 |
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