Papers presented at 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August - 2 September 2005:
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| Weitere Verfasser: | |
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2006
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| Schriftenreihe: | Physica status solidi / C
3,6 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Einzelaufnahme eines Zeitschr.-Heftes |
| Beschreibung: | S. 1364 - 2376 Ill., graph. Darst. |
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| 245 | 1 | 0 | |a Papers presented at 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August - 2 September 2005 |c guest ed.: Stefan Hildebrandt ... |
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| adam_text | (0 U IN * J HJFFE. IN *R^ 3 TAT I 1 WWW.PSS-C.COM 8*^ BIBLIOTHEK
TECHNISCHE UNIVERSITAET) ILMENAU CURRENT TOPICS IN SOLID STATE PHYSICS
EDITOR-IN-CHIEF MARTIN STUTZMANN WALTER SCHOTTKY INSTITUT, TECHNISCHE
UNIVERSITAET MUENCHEN, AM COULOMBWALL, 85748 GARCHING, GERMANY FAX: +49
(0) 89/28 91-27 37; E-MAIL: STUTZ@WSI.TUM.DE 3 6 2006 )WILEY-VCH
REGIONAL EDITORS MARTIN S. BRANDT WALTER-SCHOTTKY-INSTITUT, TECHNISCHE
UNIVERSITAET MUENCHEN, AM COULOMBWALL, 85748 GARCHING, GERMANY FAX:+49
(0)89/28 91-27 37; E-MAIL: MBRANDT@PHYSIK.TU-MUENCHEN.DE SHUIT-TONG LEE
CENTRE OF SUPER-DIAMOND AND ADVANCED FILMS (COSDAF) AND DEPARTMENT OF
PHYSICS AND MATERIALS SCIENCE CITY UNIVERSITY OF HONG KONG, 83 TAT CHEE
AVENUE, KOWLOON, HONG KONG SAR FAX: +8 52/27 84 46 96; E-MAIL:
ST.LEE@CITYU.EDU.HK PABLO ORDEJOEN INSTITUT DE CIENCIA DE MATERIALS DE
BARCELONA - CSIC CAMPUS DE LA U.A.B., 08193 BELLATERRA, BARCELONA, SPAIN
FAX: +34 93/5 80 57 29; E-MAIL: ORDEJON@ICMAB.ES MICHAEL SHUR
ELECTRICAL, COMPUTER, AND SYSTEMS ENGINEERING DEPARTMENT AND PHYSICS
DEPARTMENT, RENSSELAER POLYTECHNIC INSTITUTE, 110 8TH STREET, TROY, NY
12180, USA FAX: +1 (518) 276 2990; E-MAIL: SHURM@RPI.EDU JOHN I.
B.WILSON DEPARTMENT OF PHYSICS, HERIOT WATT UNIVERSITY, RICCARTON,
EDINBURGH EH14 4AS, UK FAX: +44 (0) 1 31/4 51 31 36; E-MAIL:
J.I.B.WILSON@HW.AC.UK MANAGING EDITOR STEFAN HILDEBRANDT EDITORIAL
OFFICE, WILEY-VCH VERLAG GMBH & CO. KGAA, BUEHRINGSTRASSE 10, 13086
BERLIN, GERMANY FAX: +49 (0) 30/47 03 13 34; E-MAIL: PSS@WILEY-VCH.DE
CONTENTS FUELL TEXT ON OUR HOMEPAGE AT: HTTP://WWW.PSS-C.COM PAPERS
PRESENTED AT 6TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS
(ICNS-6) BREMEN, GERMANY, 28 AUGUST-2 SEPTEMBER 2005 GUEST EDITORS:
STEFAN HILDEBRANDT, LIVERIOS LYMPERAKIS, JOERG NEUGEBAUER, AND MARTIN
STUTZMANN GROWTH MOLECULAR BEAM EPITAXY FOR HIGH-EFFICIENCY NITRIDE
OPTOELECTRONICS J. HEFFERNAN, M. KAUER, J. WINDLE, S. E. HOOPER, V.
BOUSQUET, C. ZELLWEGER, AND J. M. BARNES 1379-1382 RADIO-FREQUENCY MBE
GROWTH OF CUBIC GAN ON BP(001)/SI(001) HETERO-STRUCTURE T. KIKUCHI, A.
S. SOMINTAC, M. ODAWARA, T. UDAGAWA, AND T. OHACHI 1383-1387 NOVEL
BUFFER LAYER FOR THE GROWTH OF GAN ON C-SAPPHIRE WOOKHYUN LEE, SEOGWOO
LEE, HIROKI GOTO, HYUNCHUL KO, MEOUNGWHAN CHO, AND TAKAFUMI YAO
1388-1391 CRITICAL ASPECTS OF HIGH TEMPERATURE MOCVD GROWTH OF A1N
EPILAYERS ON 6H-SIC SUBSTRATES K. BALAKRISHNAN, N. FUJIMOTO, T. KITANO,
A. BANDOH, M. IMURA, K. NAKANO, M. IWAYA, S. KAMIYAMA, H. AMANO, I.
AKASAKI, T. TAKAGI, T. NORO, K. SHIMONO, T. RIEMANN, AND J. CHRISTEN
1392-1395 TWO TO THREE DIMENSIONAL TRANSITIONS OF INGAN AND THE IMPACT
OF GAN OVERGROWTH T. YAMAGUCHI, S. EINFELDT, S. GANGOPADHYAY, A.
PRETORIUS, A. ROSENAUER, J. FALTA, ANDD. HOMMEL 1396-1399 EFFECT OF
GROWTH TEMPERATURE ON ALGALNN LAYERS: A TEM ANALYSIS D. MENDEZ, M.
ALBRECHT, E. MONROY, D. JALABERT, H. P. STRUNK, A. M. SANCHEZ, AND R.
GARCIA 1400-1403 RADIO-FREQUENCY MBE GROWTH OF CUBIC GAN ON
3C-SIC(001)/SI(001) TEMPLATE T. OHACHI, T. KIKUCHI, A. SOMINTAC, S.
YAMAGUCHI, T. YASUDA, AND M. WADA 1404-1407 EFFECT OF CARRIER GAS ON GAN
EPILAYER CHARACTERISTICS Y. S. CHO, H. HARDTDEGEN, N. KALUZA, N.
THILLOSEN, R. STEINS, Z. SOFER, AND H. LUETH 1408-1411 LARGE BANDGAP
BOWING OF IN X GA!_ X N FILMS AND GROWTH OF BLUE/GREEN IN^GA, _ X N/GAN
MQWS ON HIGHLY TENSILE STRAINED GAN/SI(L 11) HETERO STRUCTURES KANG JEA
LEE, TAE SU OH, TAE KI KIM, GYE MO YANG, AND KEE YOUNG LIM 1412-1415 SI
DIFFUSION IN EPITAXIAL GAN RAFAL JAKIELA, ADAM BARCZ, EWA DUMISZEWSKA,
AND ANDRZEJ JAGODA 1416-1419 DOPING EFFICIENCY AND SEGREGATION OF SI IN
A1N GROWN BY MOLECULAR BEAM EPITAXY V. LEBEDEV, F. M. MORALES, H.
ROMANUS, G. ECKE, V. CIMALLA, M. HIMMERLICH, S. KRISCHOK, J. A.
SCHAEFER, AND O. AMBACHER 1420-1424 P-TYPE CONDUCTION IN A C-DOPED
(1101)GAN GROWN ON A 7-DEGREE-OFF ORIENTED (001)SI SUBSTRATE BY
SELECTIVE MOVPE T. HIKOSAKA, N. KOIDE, Y. HONDA, M. YAMAGUCHI, AND N.
SAWAKI 1425-1428 1364 CONTENTS ON THE INCORPORATION MECHANISM OF FE IN
GAN GROWN BY METAL-ORGANIC VAPOUR PHASE EPITAXY R. S. BALMER, D. E. J.
SOLEY, A. J. SIMONS, J. D. MACE, L. KOKER, P. O. JACKSON, D. J. WALLIS,
M. J. UREN, AND T. MARTIN 1429-1434 N-TYPE CONDUCTIVITY CONTROL OF ALGAN
WITH HIGH AI MOLE FRACTION TAKUYA KATSUNO, YUHUAI LIU, DABING LI, HIDETO
MIYAKE, KAZUMASA HIRAMATSU, TOMOHIKO SHIBATA, AND MITSUHIRO TANAKA
1435-1438 FREESTANDING TWO INCH C-PLANE GAN LAYERS GROWN ON (100)
Y-LITHIUM ALUMINIUM OXIDE BY HYDRIDE VAPOUR PHASE EPITAXY E. RICHTER,
CH. HENNIG, U. ZEHNER, M. WEYERS, G. TRAENKLE, P. REICHE, S. GANSCHOW, R
UECKER, ANDK. PETERS 1439-1443 INN-BASED LAYERS GROWN BY MODIFIED HVPE
A. SYRKIN, A. USIKOV, V. SOUKHOVEEV, O. KOVALENKOV, V. IVANTSOV, V.
DMITRIEV, C. COLLINS, E. READINGER, N. SHMIDT, V. DAVYDOV, S. NIKISHIN,
V. KURYATKOV, D. SONG, D. ROSENBLADT, AND MARK HOLTZ 1444-1447 POLISHING
AND CHARACTERIZATION OF THICK A1N LAYERS GROWN ON SIC SUBSTRATES BY
STRESS CONTROL HYDRIDE VAPOR PHASE EPITAXY H. MANK, B. AMSTATT, D.
TUROVER, E. BELLET-AMALRIC, B. DAUDIN, V. IVANTSOV, V. DMITRIEV, AND V.
MASLENNIKOV 1448-1452 CRYSTALLIZATION OF FREE STANDING BULK GAN BY HVPE
B. LUCZNIK, B. PASTUSZKA, I. GRZEGORY, M. BOCKOWSKI, G. KAMLER, J.
DOMAGALA, G. NOWAK, P. PRYSTAWKO, S. KRUKOWSKI, AND S. POROWSKI
1453-1456 THERMODYNAMIC STUDY ON THE ROLE OF HYDROGEN DURING HYDRIDE
VAPOR PHASE EPITAXY OF ALXJA^JSI H. MURAKAMI, J. KIKUCHI, Y. KUMAGAI,
AND A. KOUKITU 1457-1460 GROWTH AND DOPING OF ALGAN AND
ELECTROLUMINESCENCE OF SAG-INGAN/ALGAN HETEROSTRUCTURE BY MIXED-SOURCE
HVPE K. H. KIM, H. S. AHN, M. YANG, K. S. JANG, S. L. HWANG, W. J. CHOI,
C. R. CHO, S. W. KIM, Y. HONDA, M. YAMAGUCHI, N SAWAKI, J. YOO, S. M.
LEE, AND M. KOIKE 1461-1465 BOWING OF THICK GAN LAYERS GROWN BY HVPE
USING ELOG CH. HENNIG, E. RICHTER, U. ZEIMER, M. WEYERS, AND G. TRAENKLE
1466-1470 HVPE GROWTH OF HIGH QUALITY GAN LAYERS PETER BRUECKNER, FRANK
HABEL, AND FERDINAND SCHOLZ 1471-1474 BENDING IN HVPE GAN FREE-STANDING
FILMS: EFFECTS OF LASER LIFT-OFF, POLISHING AND HIGH-PRESSURE ANNEALING
T. PASKOVA, V. DARAKCHIEVA, P. P. PASKOV, B. MONEMAR, M. BUKOWSKI, T.
SUSKI, N. ASHKENOV, M. SCHUBERT, AND D. HOMMEL 1475-1478 FABRICATION OF
THICK A1N FILM BY LOW PRESSURE HYDRIDE VAPOR PHASE EPITAXY YU-HUAI LIU,
TOMOAKI TANABE, HIDETO MIYAKE, KAZUMASA HIRAMATSU, TOMOHIKO SHIBATA, AND
MUTSUHIRO TANAKA 1479-1482 ALGAN EPITAXIAL LAYERS GROWN BY HVPE ON
SAPPHIRE SUBSTRATES V. SOUKHOVEEV, O. KOVALENKOV, L. SHAPOVALOVA, V.
IVANTSOV, A. USIKOV, V. DMITRIEV, V. DAVYDOV, AND A. SMIRNOV 1483-1486
GROWTH OF GAN ON PATTERNED THICK HVPE FREE STANDING GAN SUBSTRATES BY
HIGH PRESSURE SOLUTION METHOD M. BOCKOWSKI, I. GRZEGORY, G. NOWAK, B.
LUCZNIK, B. PASTUSZKA, G. KAMLER, M. WROEBLEWSKI, P. KWIATKOWSKI, K
JASIK, W. WAWER, S. KRUKOWSKI, AND S. POROWSKI 1487-1490 CONTENTS 1365
GROWTH OF AIN FILMS AND THEIR CHARACTERIZATION RAKESH B. JAIN, YING GAO,
JIANPING ZHANG, R. S. QHALEED FAREED, REMIS GASKA, JIAWEI LI,
ARULCHAKKRAVARTHI ARJUNAN, EDMUNDAS KUOKSTIS, JINWEI YANG, AND M. ASIF
KHAN 1491-1494 SPECIFIC HEAT CALCULATIONS OF III-N BULK MATERIALS A.
ALSHAIKHI AND G. P. SRIVASTAVA 1495-1498 PHOTOLUMINESCENCE OF A-PLANE
GAN: COMPARISON BETWEEN MOCVD AND HVPE GROWN LAYERS P. P. PASKOV, R.
SCHIFANO, T. MALINAUSKAS, T. PASKOVA, J. P. BERGMAN, B. MONEMAR, S.
FIGGE, D. HOMMEL, B. A. HASKEIL, P. T. FINI, J. S. SPECK, AND S.
NAKAMURA 1499-1502 IMPACT OF III/V RATIO ON POLYTYPE AND CRYSTALLINE
QUALITY OF AIN GROWN ON 4H-SIC (1120) SUBSTRATE BY MOLECULAR-BEAM
EPITAXY M. HORITA, J. SUDA, AND T. KIMOTO 1503-1506 EFFECTS OF
GAN-BUFFER ETCHING IN ATMOSPHERIC-PRESSURE MOVPE GROWTH OF INN ON
SAPPHIRE A. YAMAMOTO, Y. NAGAI, H. MIWA, AND A. HASHIMOTO 1507-1510
TOWARDS FABRICATION OF IN-POLAR INN FILMS AND INN/GAN MQWS WATARU
YAMAGUCHI, SONG-BEK CHE, NAOHIRO KIKUKAWA, YOSHIHIRO ISHITANI, AND
AKIHIKO YOSHIKAWA 1511-1514 RF-MBE GROWTH OF CUBIC INN FILMS ON MGO
(001) SUBSTRATES Y. IWAHASHI, H. YAGUCHI, A. NISHIMOTO, M. ORIHARA, Y.
HIJIKATA, AND S. YOSHIDA 1515-1518 A COMPARATIVE STUDY ON MOVPE INN
GROWN ON GA- AND N-POLARITY BULK GAN W. J. WANG, H. MIWA, A. HASHIMOTO,
AND A. YAMAMOTO 1519-1522 POLARITY AND MICROSTRUCTURE IN INN THIN LAYERS
GROWN BY MOVPE N. KUWANO, Y. NAKAHARA, AND H. AMANO 1523-1526 NH3/TMI
MOLAR RATIO DEPENDENCE OF ELECTRICAL AND OPTICAL PROPERTIES FOR
ATMOSPHERIC-PRESSURE MOVPE INN A. YAMAMOTO, H. MIWA, Y. SHIBATA, AND A.
HASHIMOTO 1527-1530 GROWTH OF INN ON 6H-SIC BY PLASMA ASSISTED MOLECULAR
BEAM EPITAXY APRIL S. BROWN, TONG-HO KIM, SOOJEONG CHOI, PAE WU, MICHAEL
MORSE, MARIA LOSURDO, MARIA M. GIANGREGORIO, GIOVANNI BRUNO, AND AKIHIRO
MOTO 1531-1535 DETERIORATION OF MOVPE INN FILMS ON SAPPHIRE DURING
GROWTH AND POST-GROWTH ANNEALING HIROSHI MIWA, AKIHIRO HASHIMOTO, AND
AKIO YAMAMOTO 1536-1539 STUDY ON INFLUENCE OF ATOMIC HYDROGEN
IRRADIATION ON GROWTH AND PROPERTIES OF N-POLARITY INN SONG-BEK CHE,
KOICHIRO AKASAKA, YOSHIHIRO ISHITANI, AND AKIHIKO YOSHIKAWA 1540-1543
TOWARDS A BETTER UNDERSTANDING OF NANO-ISLANDS FORMED DURING ATMOSPHERIC
PRESSURE MOVPE N. K. VAN DER LAAK, R. A. OLIVER, J. S. BARNARD, P. D.
CHERNS, M. J. KAPPERS, AND C. J. HUMPHREYS 1544-1547 INVESTIGATION OF
GROWTH MECHANISMS OF GAN QUANTUM DOTS ON (0001) AIN SURFACE BY AMMONIA
MBE V. G. MANSUROV, YU. G. GALITSYN, A. YU. NIKITIN, K. S. ZHURAVLEV,
AND PH. VENNEGUES . . . . 1548-1551 THREE METHODS FOR THE GROWTH OF
INGAN NANOSTRUCTURES BY MOVPE R. A. OLIVER, M. J. KAPPERS, N. K. VAN DER
LAAK, AND C. J. HUMPHREYS 1552-1556 GROWTH AND MORPHOLOGY OF MOVPE GROWN
INGAN/GAN ISLANDS S. GANGOPADHYAY, TH. SCHMIDT, S. EINFELDT, T.
YAMAGUCHI, D. HOMMEL, AND J. FALTA 1557-1560 GROWTH OF IN-POLAR AND
N-POLAR INN NANOCOLUMNS ON GAN TEMPLATES BY MOLECULAR BEAM EPITAXY
XINQIANG WANG, SONG-BEK CHE, YOSHIHIRO ISHITANI, AND AKIHIKO YOSHIKAWA
1561-1565 1366 CONTENTS DISLOCATION BEHAVIOUR IN ILL-NITRIDE EPITAXIAL
FILMS GROWN ON VICINAL SAPPHIRE (0001) SUBSTRATES X. Q. SHEN, H.
MATSUHATA, AND H. OKUMURA 1566-1569 THE EFFECT OF SI ON THE GROWTH MODE
OF GAN J. VON PEZOLD, R. A. OLIVER, M. J. KAPPERS, P. D. BRISTOWE, AND
C. J. HUMPHREYS 1570-1574 THE INITIAL GROWTH STAGE IN PVT GROWTH OF
ALUMINUM NITRIDE P. HEIMANN, B. M. EPELBAUM, M. BICKERMANN, S. NAGATA,
AND A. WINNACKER 1575-1578 INVESTIGATION OF A1N NUCLEATION LAYERS FOR
ALGAN/GAN HETEROSTRUCTURES ON 4H-SIC S. BOEYKENS, M. R. LEYS, M.
GERMAIN, K. CHENG, J. DERLUYN, B. VAN DAELE, G. VAN TENDELOO, R.
BELMANS, AND G. BORGHS 1579-1582 REAL TIME SPECTROSCOPIC ELLIPSOMETRY
INVESTIGATION OF HOMOEPITAXIAL GAN GROWN BY PLASMA ASSISTED MOLECULAR
BEAM EPITAXY TONG-HO KIM, SOOJEONG CHOI, PAE WU, APRIL BROWN, MARIA
LOSURDO, MARIA M. GIANGREGORIO, GIOVANNI BRUNO, AND AKIHIRO MOTO
1583-1586 INVESTIGATIONS ON LOCAL GA AND IN INCORPORATION OF GALNN
QUANTUM WELLS ON FACETS OF SELECTIVELY GROWN GAN STRIPES B. NEUBERT, F.
HABEL, P. BRUECKNER, F. SCHOLZ, M. SCHIRRA, M. FENEBERG, K. THONKE, T.
RIEMANN, J. CHRISTEN, M. BEER, J. ZWECK, G. MOUTCHNIK, AND M. JETTER
1587-1590 FABRICATION OF INN/ALINN MQWS BY RF-MBE W. TERASHIMA, S. B.
CHE, Y. ISHITANI, AND A. YOSHIKAWA 1591-1594 IN-PLANE ANISOTROPY IN
UNIAXIALLY-STRAINED GAN FILMS DETECTED BY OPTICAL DIFFRACTION TECHNIQUE
SATORU ADACHI, YASUNORI TODA, TETSURO ISHIGURO, KATSUYUKI HOSHINO, AND
YASUHIKO ARAKAWA 1595-1598 FABRICATION OF INN/INGAN MULTIPLE QUANTUM
WELL STRUCTURES BY RF-MBE M. KUROUCHI, H. NA, H. NAOI, D. MUTO, S.
TAKADO, T. ARAKI, T. MIYAJIMA, AND Y. NANISHI. . . 1599-1603 GROWTH OF
TERNARY AND QUATERNARY CUBIC IH-NITRIDES ON 3C-SIC SUBSTRATES J.
SCHOERMANN, S. POTTHAST, M. SCHNIETZ, S. F. LI, D. J. AS, AND K. LISCHKA
1604-1607 PREPARATION AND CHARACTERISATION OF TANTALUM CARBIDE AS AN
OPTIONAL CRUCIBLE MATERIAL FOR BULK ALUMINIUM NITRIDE CRYSTAL GROWTH VIA
PHYSICAL VAPOUR TRANSPORT C. HARTMANN, J. WOLLWEBER, M. ALBRECHT, AND I.
RASIN 1608-1612 INFLUENCE OF GAS COMPOSITION ON THE SYNTHESIS OF GALLIUM
NITRIDE POWDERS BY TWO-STAGE CHEMICAL VAPOR METHOD K. HARA, A. YONEMURA,
AND T. UCHIDA 1613-1616 GROWTH OF HIGH-QUALITY A1N AT HIGH GROWTH RATE
BY HIGH-TEMPERATURE MOVPE N. FUJIMOTO, T. KITANO, G. NARITA, N. OKADA,
K. BALAKRISHNAN, M. IWAYA, S. KAMIYAMA, H. AMANO, I. AKASAKI, K.
SHIMONO, T. NORO, T. TAKAGI, AND A. BANDOH 1617-1619 MODELING AND
EXPERIMENTAL ANALYSIS OF INGAN MOVPE IN THE AIXTRON AIX 200/4 RF-S
HORIZONTAL REACTOR E. V. YAKOVLEV, R. A. TALALAEV, R. W. MARTIN, C.
JEYNES, N. PENG, C. J. DEATCHER, AND I. M. WATSON 1620-1623 FABRICATION
OF GAN-BASED STRIPED STRUCTURES ALONG THE (1120) DIRECTION BY THE
COMBINATION OF RIE DRY-ETCHING AND KOH WET-ETCHING TECHNIQUES TO RECOVER
DRY-ETCHING DAMAGE MORIMICHI ITOH, TORA KINOSHITA, KOJI KAWASAKI,
MISAICHI TAKEUCHI, CHOSHIRO KOIKE, AND YOSHINOBU AOYAGI 1624-1628 A
CONTROL TECHNIQUE OF OXYGEN CONTAMINATION BY GA BEAM IRRADIATION IN INN
MOMBE GROWTH K. ISAMOTO, Y. UESAKA, A. YAMAMOTO, AND A. HASHIMOTO
1629-1632 CONTENTS 1367 ALGAN FILMS GROWN ON TRENCHED SAPPHIRE
SUBSTRATES USING A LOW-TEMPERATURE GANP BUFFER LAYER BY MOCVD K.
SUMIYOSHI, M. TSUKIHARA, S. KAWAMICHI, F. YAN, AND S. SAKAI 1633-1636
THERMALIZATION AND RECOMBINATION IN EXPONENTIAL BAND TAIL STATES M.
NIEHUS AND R. SCHWARZ 1637-1644 CURRENT CROWDING EFFECTS ON BLUE LED
OPERATION I. YU. EVSTRATOV, V. F. MYMRIN, S. YU. KARPOV, AND YU. N.
MAKAROV 1645-1648 MICROFABRICATION OF GAN GROOVE ON SAPPHIRE SUBSTRATE
TREATED SELECTIVELY BY ELECTRON-BEAM H. MATSUMURA, M. SUMIYA, Y. KAWAI,
M. TOMIKI, K. MURAKAMI, AND S. FUKE 1649-1652 STRUCTURAL AND ELECTRICA!
PROPERTIES RECENT RESULTS ON AIN GROWTH BY HVPE AND FABRICATION OF FREE
STANDING AIN WAFERS V. SOUKHOVEEV, O. KOVALENKOV, V. IVANTSOV, A.
SYRKIN, A. USIKOV, V. MASLENNIKOV, AND V. DMITRIEV 1653-1657
CHARACTERIZATION OF STRUCTURAL DEFECTS IN (1120) GAN FILMS GROWN ON
(1102) SAPPHIRE SUBSTRATES P. VENNEGUES, F. MATHAL, AND Z. BOUGRIOUA
1658-1661 DIFFRACTION ANOMALOUS FINE STRUCTURE INVESTIGATION OF INGAN
QUANTUM DOTS E. PISKORSKA, V. HOLY, M. SIEBERT, B. KRAUSE, T. H.
METZGER, TH. SCHMIDT, J. FALTA, T. YAMAGUCHI, AND D. HOMMEL 1662-1666
QUANTITATIVE STRAIN ANALYSIS OF GAN/AIN QUANTUM DOT MULTILAYERS E.
SARIGIANNIDOU, A. D. ANDREEV, E. MONROY, B. DAUDIN, AND J. L. ROUVIERE
1667-1670 EVALUATION OF STRAIN IN AIN THIN FILMS GROWN ON SAPPHIRE AND
6H-SIC BY METALORGANIC CHEMICAL VAPOR DEPOSITION NAOTO KATO AND TAKASHI
INUSHIMA 1671-1674 ELECTRONIC STATES IN NITRIDE SEMICONDUCTOR QUANTUM
DOTS: A TIGHT-BINDING APPROACH S. SCHULZ AND G. CZYCHOLL 1675-1678 TEM
ANALYSES OF WURTZITE INGAN ISLANDS GROWN BY MOVPE AND MBE A. PRETORIUS,
T. YAMAGUCHI, C. KUEBEL, R. KROGER, D. HOMMEL, AND A. ROSENAUER 1679-1682
REDUCED RESIDUAL STRESS IN GAN GROWN ON 3C-SIC/SI(L 11) TEMPLATES FORMED
BY C + -ION IMPLANTATION T. KOBAYASHI, N. SAWAZAKI, M. S. CHO, A.
HASHIMOTO, A. YAMAMOTO, AND Y. ITO 1683-1686 STRUCTURAL CHARACTERIZATION
OF INN QUANTUM DOTS GROWN BY METALORGANIC VAPOUR PHASE EPITAXY J. G.
LOZANO, D. GONZALEZ, A. M. SAENCHEZ, D. ARAUEJO, S. RUFFENACH, O. BRIOT,
AND R. GARCIA. . 1687-1690 ALN/GAN SUPERLATTICES: STRAIN RELAXATION E.
BELLET-AMALRIC, B. AMSTATT, AND B. DAUDIN 1691-1694 INVESTIGATION OF
THERMAL CONDUCTIVITY OF NITRIDE MIXED CRYSTALS AND SUPERLATTICES BY
MOLECULAR DYNAMICS TAKAHIRO KAWAMURA, YOSHIHIRO KANGAWA, AND KOICHI
KAKIMOTO 1695-1699 THERMODYNAMIC STABILITY OF IN 1 _ X _ ; ,GA X AL ,N
ON GAN AND INN YOSHIHIRO KANGAWA, KOICHI KAKIMOTO, TOMONORI ITO, AND
AKINORI KOUKITU 1700-1703 ELECTRICAL PROPERTIES OF NI/I-ALGAN/GAN
STRUCTURES AND INFLUENCE OF THERMAL ANNEALING T. SAWADA, N. KIMURA, K.
SUZUKI, K. IMAI, S.-W. KIM, AND T. SUZUKI 1704-1708 HIGH TEMPERATURE
CHARACTERIZATION OF PT-BASED SCHOTTKY DIODES ON ALGAN/GAN
HETEROSTRUCTURES J. PEDROS, R. CUERDO, R. LOSSY, N. CHATURVEDI, J.
WUERFL, AND F. CALLE 1709-1712 1368 CONTENTS EXPERIMENTAL EVIDENCE FOR
DRUDE-BOLTZMANN-LIKE TRANSPORT IN A TWO-DIMENSIONAL ELECTRON GAS IN AN
ALGAN/GAN HETEROSTRUCTURE JING-HAN CHEN, JYUN-YING LIN, JUNG-KAI TSAI,
HUN PARK, GIL-HO KIM, JUNGSEOK AHN, HYUN-ICK CHO, EUN-JIN LEE, JUNG-HEE
LEE, C.-T. LIANG, AND Y. F. CHEN 1713-1716 FORMATION OF LOW RESISTANCE
NONALLOYED OHMIC CONTACTS TO P-TYPE GAN BY KRF LASER IRRADIATION MIN-SUK
OH, JA-SOON JANG, SANG-HO KIM, AND TAE-YEON SEONG 1717-1720 THE
CONDUCTIVITY OF MG-DOPED INN V. CIMALLA, M. NIEBELSCHUETZ, G. ECKE, O.
AMBACHER, R. GOLDHAHN, H. LU, AND W. J. SCHAFF . . 1721 -1724 SURFACE
SEGREGATION OF SI AND MG DOPANTS IN MOVPE GROWN GAN FILMS REVEALED BY
X-RAY PHOTOEMISSION SPECTRO-MICROSCOPY TH. SCHMIDT, M. SIEBERT, J. I.
FLEGE, S. GANGOPADHYAY, A. PRETORIUS, R. RROEGER, S. FIGGE, L.
GREGORATTI, A. BARINOV, D. HOMMEL, AND J. FALTA 1725-1728 STRUCTURAL
INVESTIGATIONS OF GAN FILMS WITH X-RAY STANDING WAVES MICHAEL SIEBERT,
THOMAS SCHMIDT, JAN INGO FLEGE, SVEN EINFELDT, STEPHAN FIGGE, DETLEF
HOMMEL, AND JENS FALTA 1729-1732 NEW CORE CONFIGURATIONS OF THE C-EDGE
DISLOCATION IN WURTZITE GAN I. BELABBAS, J. CHEN, M. AKLI BELKHIR, P.
RUTERANA, AND G. NOUET 1733-1737 LOCAL STRUCTURAL CHARACTERIZATION OF
EPITAXIAL A-PLANE INGAN/GAN THIN FILMS BY TRANSMISSION ELECTRON
MICROSCOPY T. YAMAZAKI, K. KUSAKABE, N. NAKANISHI, K. OHKAWA, AND I.
HASHIMOTO 1738-1741 ANALYSIS OF THE LOCAL STRUCTURE OF ALN:MN USING
X-RAY ABSORPTION FME STRUCTURE MEASUREMENTS TAKAO MIYAJIMA, YOSHIHIRO
KUDO, TOMOYA URUGA, AND KAZUHIKO HARA 1742-1745 ANALYSIS OF THE LOCAL
STRUCTURE OF INN WITH A BANDGAP ENERGY OF 0.8 AND 1.9 EV AND ANNEALED
INN USING X-RAY ABSORPTION FME STRUCTURE MEASUREMENTS TAKAO MIYAJIMA,
YOSHIHIRO KUDO, AKIHIRO WAKAHARA, TOMOHIRO YAMAGUCHI, TSUTOMU ARAKI, AND
YASUSHI NANISHI 1746-1749 MECHANISMS OF BENDING OF THREADING
DISLOCATIONS IN MOVPE-GROWN GAN ON (0001) SAPPHIRE R. DATTA AND C. J.
HUMPHREYS 1750-1753 INVESTIGATION OF HYDROGEN IMPLANTATION INDUCED
BLISTERING IN GAN R. SINGH, I. RADU, U. GOESELE, AND S. H. CHRISTIANSEN
1754-1757 CONTROL OF LEAKAGE CURRENT IN ALGAN SCHOTTKY INTERFACES BY AN
ULTRATHIN AI LAYER MASAMITSU KANEKO AND TAMOTSU HASHIZUME 1758-1761
ELECTRICAL CHARACTERISTICS AND THERMAL STABILITY OF TI CONTACT TO P-GAN
C. K TAN, A. ABDUL AZIZ, Z. HASSAN, F. K. YAM, AND A. Y HUDEISH
1762-1766 WET CHEMICAL ETCHING OF A1N IN KOH SOLUTION I. CIMALLA, CH.
FOERSTER, V. CIMALLA, V. LEBEDEV, D. CENGHER, AND O. AMBACHER 1767-1770
ATOMIC STRUCTURE OF DISLOCATIONS IN NITRIDE SEMICONDUCTORS S. PETIT, A.
BERE, J. CHEN, I. BELABBAS, P. RUTERANA, AND G. NOUET 1771-1774
INVESTIGATION OF DEFECTS IN GAN WITH VARYING MG DOPING CONCENTRATIONS
TOSHIYUKI OBATA, NAOKI MATSUMURA, KIYOSHI OGIWARA, HIDEKI HIRAYAMA,
YOSHINOBU AOYAGI, AND KOJI ISHIBASHI 1775-1778 MULTIPLE DEFECTS IN GALNN
MULTIPLE QUANTUM WELLS GROWN ON ELO GAN LAYERS AND ON GAN SUBSTRATES S.
TOMIYA, O. GOTO, Y. HOSHINA, T. TANAKA, AND M. IKEDA 1779-1782 METAL
(NI, AU)-VACANCY COMPLEXES IN GAN J. VON PEZOLD AND P. D. BRISTOWE
1783-1786 CONTENTS 1369 REDUCTION OF STRAHL AND DISLOCATION DEFECTS IN
GAN LAYERS GROWN ON SI SUBSTRATE BY MOCVD USING A SUBSTRATE DEFECT
ENGINEERING TECHNIQUE M. JAMIL, ERIC IRISSOU, J. R. GRANDUSKY, V.
JINDAL, AND F. SHAHEDIPOUR-SANDVIK 1787-1791 DEVELOPMENT OF PIT-DEFECT
FREE SMOOTH A-PLANE GAN SURFACES ON R-PLANE SAPPHIRE USING METALORGANIC
CHEMICAL VAPOR DEPOSITION: A GROWTH MECHANISM STUDY VIBHU JINDAL, JAMES
GRANDUSKY, MUHAMMAD JAMIL, ERIC IRISSOU, FATEMEH SHAHEDIPOUR SANDVIK,
KEVIN MATOCHA, AND VINAYAK TILAK 1792-1797 OPTICAL CAVITY FORMATION ON
GAN USING A CONVENTIONAL RIE SYSTEM F. G. KALAITZAKIS, G.
KONSTANTINIDIS, K. TSAGARAKI, M. ANDROULIDAKI, AND N. T. PELEKANOS . . .
1798-1802 STRUCTURAL ANALYSIS OF PYRAMIDAL DEFECTS IN MG-DOPED GAN A.
PRETORIUS, M. SCHOWALTER, N. DANEU, R. KROGER, A. RECNIK, AND A.
ROSENAUER 1803-1806 MORPHOLOGICAL EVALUATION OF EPITAXIAL GAN GROWN ON
R-PLANE SAPPHIRE BY METALORGANIC VAPOR-PHASE EPITAXY K. KUSAKABE AND K
OHKAWA 1807-1810 INGAN QUANTUM WELL EPILAYERS MORPHOLOGICAL EVOLUTION
UNDER A WIDE RAENGE OF MOCVD GROWTH PARAMETER SETS D. I. FLORESCU, S. M.
TING, V. N. MERAI, A. PAREKH, D. S. LEE, E. A. ARMOUR, AND W. E. QUINN
1811-1814 PINHOLES IN MULTIPLE QUANTUM WELL IN^GAI _^N/GAN WITH LOW IN
CONCENTRATION FLORENCE GLOUX, PIERRE RUTERANA, AND GERARD NOUET
1815-1818 EXTREMELY SMOOTH SURFACE MORPHOLOGY OF GAN-BASED LAYERS ON
MISORIENTED GAN SUBSTRATES FOR HIGH-POWER BLUE-VIOLET LASERS KOICHI
TACHIBANA, HAJIMENAGO, AND SHIN-YANUNOUE 1819-1822 STRUCTURAL AND
ELECTRICAL CHARACTERISTICS OF AG/AL 0 . 2 GA 0 .8N AND AGZALO.3GAO.7N
SCHOTTKY CONTACTS: AN XPS STUDY B. BOUDJELIDA, I. GEE, J. EVANS-FREEMAN,
S. A. CLARK, M. AZIZE, J.-M. BETHOUX, AND P. DEMIERRY 1823-1827
INVESTIGATION OF OPTIMIZED OHMIC CONTACT OF DIRECT ITO LAYER WITH
SYNCHROTRON RADIATION ANALYSIS JUN-SEOK HA, JUN-HO JANG, MIN-HO JOO,
TAE-HYEONG KIM, KYU-HO PARK, HYUN-JOON SHIN, JEONG-SOO LEE, AND JONG-JAE
JUNG 1828-1831 TEM ANALYSIS OF ANNIHILATION PROCESS OF THREADING
DISLOCATIONS IN GAN THIN FILMS GROWN BY MOVPE WITH ANTI-SURFACTANT
TREATMENT M. HIJIKURO,N. KUWANO, M. TAKEUCHI, ANDY. AOYAGI 1832-1835 C
2V NITROGEN-HYDROGEN COMPLEXES IN GAASN REVEALED BY X-RAY ABSORPTION
NEAR-EDGE SPECTROSCOPY AND AB INITIO SIMULATIONS G. CIATTO, F.
BOSCHERINI, A. AMORE BONAPASTA, F. FILIPPONE, A. POLIMENI, AND M.
CAPIZZI . . . 1836-1840 OPTICAL PROPERTIES INN: FERMI LEVEL
STABILIZATION BY LOW-ENERGY ION BOMBARDMENT L. F. J. PIPER, T. D. VEAL,
C. F. MCCONVILLE, H. LU, AND W. J. SCHAFF 1841-1845 OBSERVATION OF A
FILLED ELECTRONIC STATE IN THE CONDUCTION BAND OF INN J. J. KIM, H.
MAKINO, K. KOBAYASHI, P. P. CHEN, E. IKENAGA, M. KOBATA, A. TAKEUCHI, M.
AWAJI, T. HANADA, M. W. CHO, AND T. YAO 1846-1849 CONDUCTION AND VALENCE
BAND EDGE PROPERTIES OF HEXAGONAL INN CHARACTERIZED BY OPTICAL
MEASUREMENTS Y. ISHITANI, W. TERASHIMA, S. B. CHE, AND A. YOSHIKAWA
1850-1853 1370 CONTENTS ANISOTROPY OF THE T-POINT EFFECTIVE MASS AND
MOBILITY IN HEXAGONAL INN T. HOFMANN, T. CHAVDAROV, V. DARAKCHIEVA, H.
LU, W. J. SCHAFF, AND M. SCHUBERT 1854-1857 PHOTOLUMINESCENCE
DEPTH-PROFILING OF LATTICE-MISMATCHED INGAN THICK FILM ON GAN USING
INDUCTIVELY COUPLED PLASMA ETCHING JI-MYON LEE, BYUNG-IL KIM, AND
SEONG-JU PARK 1858-1861 DYNAMIC POLARIZATION ROTATION IN PUMP-AND-PROBE
TRANSIENTS OF ANISOTROPICALLY STRAINED M-PLANE GAN FILMS ON LIA10 2 K.
OMAE, T. FLISSIKOWSKI, P. MISRA, O. BRANDT, H. T. GRAHN, K. KOJIMA, AND
Y. KAWAKAMI . . 1862-1865 ENERGY GAPS AND BOWING PARAMETERS OF INALGAN
TERNARY AND QUATERNARY ALLOYS M. ANDROULIDAKI, N. T. PELEKANOS, K.
TSAGARAKI, E. DIMAKIS, E. LLIOPOULOS, A. ADIKIMENAKIS, E.
BELLET-AMALRIC, D. JALABERT, AND A. GEORGAKILAS 1866-1869
PHOTOLUMINESCENCE SPECTRA OF GAN FILMS GROWN AT LOW TEMPERATURE BY
COMPOUND-SOURCE MOLECULAR BEAM EPITAXY TOHRU HONDA, MASARU SAWADA,
TOSHIAKI KOBAYASHI, SHINICHI EGAWA, YOHTA AOKI, MIWAKO AKIYAMA, AND
HIDEO KAWANISHI 1870-1873 INFRARED REFLECTANCE MEASUREMENT FOR INN THIN
FILM CHARACTERIZATION K. FUKUI, Y. KUGUMIYA, N. NAKAGAWA, AND A.
YAMAMOTO 1874-1878 BAND-TO-BAND AND INNER SHELL EXCITATION VIS-UV
PHOTOLUMINESCENCE OF QUATERNARY INALGAN ALLOYS K. FUKUI, S. NAOE, K.
OKADA, S. HAMADA, AND H. HIRAYAMA 1879-1883 HIGH TEMPERATURE REFRACTIVE
INDICES OF GAN C. LIU, S. STEPANOV, A. GOTT, P. A. SHIELDS, E. ZHIRNOV,
W. N. WANG, E. STEIMETZ, AND J. T. ZETTLER 1884-1887 RADIATIVE
RECOMBINATION MECHANISM IN HIGHLY MODULATION DOPED GAN/ALGAN MULTIPLE
QUANTUM WELLS B. ARNAUDOV, P. P. PASKOV, H. HARATIZADEH, P. O. HOLTZ, B.
MONEMAR, S. KAMIYAMA, M. IWAYA, H. AMANO, AND I. AKASAKI 1888-1891 THE
MAGNESIUM ACCEPTOR STATES IN GAN: AN INVESTIGATION BY OPTICALLY-DETECTED
MAGNETIC RESONANCE G. N. ALIEV, S. ZENG, J. J. DAVIES, D. WOLVERSON, S.
J. BINGHAM, P. J. PARBROOK, AND T. WANG 1892-1896 DIRECT CORRELATION
BETWEEN NONRADIATIVE RECOMBINATION CENTERS AND THREADING DISLOCATIONS IN
INGAN QUANTUM WELLS BY NEAR-FIELD PHOTOLUMINESCENCE SPECTROSCOPY AKIO
KANETA, MITSURU FUNATO, YUKIO NARUKAWA, TAKASHI MUKAI, AND YOICHI
KAWAKAMI.... 1897-1901 ORIENTATION-DEPENDENT PROPERTIES OF ALUMINUM
NITRIDE SINGLE CRYSTALS M. BICKERMANN, P. HEIMANN, AND B. M. EPELBAUM
1902-1906 PHOTO-INDUCED IMPROVEMENT OF RADIATIVE EFFICIENCY AND
STRUCTURAL CHANGES IN GAASN ALLOYS H. YAGUCHI, T. MORIOKE, T. AOKI, H.
SHIMIZU, Y. HIJIKATA, S. YOSHIDA, M. YOSHITA, H. AKIYAMA, N. USAMI, D.
AOKI, AND K. ONABE 1907-1910 EFFECT OF V/III RATIO ON THE OPTICAL
PROPERTIES OF EU-DOPED GAN J. SAWAHATA, J. W. SEO, M. TAKIGUCHI, D.
SAITO, S. NEMOTO, AND K. AKIMOTO 1911-1914 CATHODOLUMINESCENCE
PROPERTIES OF INGAN CODOPED WITH ZN AND SI Y. HONDA, Y. YANASE, M.
YAMAGUCHI, AND N. SAWAKI 1915-1918 THE ROLE OF VACANCIES IN THE RED
LUMINESCENCE FROM MG-DOPED GAN S. ZENG, G. N. ALIEV, D. WOLVERSON, J. J.
DAVIES, S. J. BINGHAM, D. A. ABDULMALIK, P. G. COLEMAN, T. WANG, AND P.
J. PARBROOK 1919-1922 CARRIER LIFETIME AND DIFFUSION IN GAN EPILAYERS
GROWN BY MEMOCVD* G. TAMULAITIS, J. MICKEVICIUS, M. S. SHUR, R. S.
QHALID FAREED, J. P. ZHANG, ANDR. GASKA 1923-1926 CONTENTS 1371 DEPTH
PROFILING OF ION-IMPLANTED ALINN USING TIME-OF-FLIGHT SECONDARY ION MASS
SPECTROMETRY AND CATHODOLUMINESCENCE R. W. MARTIN, D. RADING, R.
KERSTING, E. TALLAREK, E. NOGALES, D. AMABILE, K. WANG, V. KATCHKANOV,
C. TRAGER-COWAN, K. P. O DONNELL, I. M. WATSON, V. MATIAS, A. VANTOMME,
K. LORENZ, AND E. ALVES 1927-1930 CLUSTERING IN GAASSBN ALLOYS AS A
POSSIBLE ORIGIN OF THEIR ATYPICAL OPTICAL BEHAVIOR: A SB K-EDGE X-RAY
ABSORPTION STUDY GIANLUCA CIATTO, JEAN-CHRISTOPHE HARMAND, LUDOVIC
LARGEAU, AND FRANK GLAS 1931-1934 DETERMINATION OF CARRIER DIFFUSION
LENGTH IN MOCVD-GROWN GAN EPILAYERS ON SAPPHIRE BY OPTICAL TECHNIQUES E.
V. LUTSENKO, A. L. GURSKII, V. N. PAVLOVSKII, G. P. YABLONSKII, T.
MALINAUSKAS, K. JARASIUENAS, B. SCHINELLER, AND M. HEUKEN 1935-1939
COUPLING OF PHONONS WITH EXCITONS BOUND TO DIFFERENT DONORS AND
ACCEPTORS IN HEXAGONAL GAN K. P. KORONA, A. WYSMOLEK, J. KUEHL, M.
KAMINSKA, J. M. BARANOWSKI, D. C. LOOK, AND S.S.PARK 1940-1943 ENHANCED
EMISSION EFFICIENCY OF INGAN FILMS WITH SI DOPING DA-BING LI, YU-HUAI
LIU, TAKUYA KATSUNO, KEISUKE NAKAO, KAZUYA NAKAMURA, MASAKAZU AOKI,
HIDETO MIYAKE, AND KAZUMASA HIRAMATSU 1944-1948 MEMBRANE STRUCTURES
CONTAINING INGAN/GAN QUANTUM WELLS FABRICATED BY WET ETCHING OF
SACRIFICIAL SILICON SUBSTRATES S.-H. PARK, C. LIU, E. GU, M. D. DAWSON,
I. M. WATSON, K. BEJTKA, P. R. EDWARDS, AND R. W. MARTIN 1949-1952
FABRICATION AND CHARACTERIZATION OF 20 PERIODS INN/INGAN MQWS SONG-BEK
CHE, YOSHIHIRO ISHITANI, AND AKIHIKO YOSHIKAWA 1953-1957 STIMULATED
EMISSION AND CARRIER DYNAMICS IN ALINGAN MULTI-QUANTUM WELLS S. A.
HASHEMIZADEH, J.-P. R. WELLS, J. BROWN, P. MURZYN, B. D. JONES, T. WANG,
P. J. PARBROOK, A. M. FOX, D. J. MOWBRAY, AND M. S. SKOLNICK 1958-1961
BARRIER-TO-WELL CARRIER DYNAMICS OF INGAN/GAN MULTI-QUANTUM-WELLS GROWN
BY PLASMA ASSISTED MBE ON BULK GAN SUBSTRATES K. P. KORONA, C.
SKIERBISZEWSKI, M. SIEKACZ, A. FEDUNIEWICZ, T. SUSKI, G. FRANSSEN, I.
GRZEGORY, J. BORYSIUK, AND M. LESZCZYNSKI 1962-1965 OPTIMIZING THE
INTERNAL QUANTUM EFFICIENCY OF GALNN SQW STRUCTURES FOR GREEN LIGHT
EMITTERS D. FUHRMANN, U. ROSSOW, C. NETZEL, H. BREMERS, G. ADE, P.
HINZE, AND A. HANGLEITER . . . . 1966-1969 HIGH QUANTUM EFFICIENCY
INGAN/GAN STRUCTURES EMITTING AT 540 NM D. M. GRAHAM, P. DAWSON, M. J.
GODFREY, M. J. KAPPERS, P. M. F. J. COSTA, M. E. VICKERS, R. DATTA, C.
J. HUMPHREYS, AND E. J. THRUSH 1970-1973 M. ODIFYING OPTICAL PROPERTIES
OF INGAN QUANTUM WELLS BY A LARGE PIEZOELECTRIC POLARIZATION H. GOTOH,
T. TAWARA, Y. KOBAYASHI, N. KOBAYASHI, Y. YAMAUCHI, T. MAKIMOTO, AND T.
SAITOH 1974-1977 PHOTOCAPACITANCE CHARACTERISTICS OF (IN,GA)N/GAN MQW
STRUCTURES C. RIVERA, J. L. PAU, E. MUNOZ, T. IVE, AND O. BRANDT
1978-1982 PHOTOLUMINESCENCE AND EDGE-INCIDENT WAVELENGTH MODULATION
TRANSMITTANCE SPECTROSCOPY CHARACTERIZATIONS OF INGAN/GAN
MULTIPLE-QUANTUM-WELL STRUCTURES D. Y. LIN, W. L. CHEN, W. C. LIN, J. J.
SHIU, AND J. HAN 1983-1987 ANISOTROPIE AMBIPOLAR DIFFUSION OF CARRIERS
IN INGAN/GAN QUANTUM WELLS Y. J. WANG, S. J. XU, AND Q. LI 1988-1991
1372 CONTENTS OPTICAL SPECTRA OF (1101) INGAN/GAN AND GAN/ALGAN MQW
STRUCTURE GROWN ON A 7 DEGREE OFF AXIS (001) SI SUBSTRATE EUN-HEE KIM,
TOSHIKI HIKOSAKA, TETSUO NARITA, YOSHIO HONDA, AND NOBUHIKO SAWAKI . . .
. 1992-1996 RAMAN SCATTERING FROM IN 0 2 GAO.GN/GAN SUPERLATTICES KENJI
KISODA, KOHJI HIRAKURA, AND HIROSHI HARIMA 1997-2000 RESONANT
PHOTOLUMINESCENCE EXCITATION STUDIES OF INGAN/GAN SINGLE QUANTUM WELLS
D. M. GRAHAM, P. DAWSON, M. J. GODFREY, M. J. KAPPERS, J. S. BARNARD, C.
J. HUMPHREYS, AND E. J. THRUSH 2001-2004 THE EFFECT OF A MG-DOPED GAN
CAP LAYER ON THE OPTICAL PROPERTIES OF INGAN/ALGAN MULTIPLE QUANTUM WELL
STRUCTURES D. M. GRAHAM, P. DAWSON, Y. ZHANG, P. M. F. J. COSTA, M. J.
KAPPERS, C. J. HUMPHREYS, AND E. J. THRUSH 2005-2008 CRITICAL POINTS OF
THE BANDSTRUCTURE OF ALN/GAN SUPERLATTICES INVESTIGATED BY SPECTROSCOPIC
ELLIPSOMETRY AND MODULATION SPECTROSCOPY C. BUCHHEIM, R. GOLDHAHN, A. T.
WINZER, C. COBET, M. RAKEL, N. ESSER, U. ROSSOW, D. FUHRMANN, A.
HANGLEITER, AND O. AMBACHER 2009-2013 CRACK-FREE ALGAN/GAN BRAGG MIRRORS
GROWN ON SI(L 11) SUBSTRATES BY METALORGANIC VAPOR PHASE EPITAXY A. P.
CHIU, N. C. CHEN, P. H. CHANG, AND C. F. SHIH 2014-2018 OPTICAL
CHARACTERIZATION OF GAN MICROCAVITY FABRICATED BY WET ETCHING C.-Y. LU,
S.-L. WANG, H.-M. WU, AND L.-H. PENG 2019-2021 LARGE ENHANCEMENT OF
GAN-UV LIGHT EMISSION USING SILVER MIRROR RESONATOR N. M. AHMED, M. R.
HASHIM, AND Z. HASSAN 2022-2025 EU 3+ LOCATION IN EU DOPED GAN THIN
FILMS AND QUANTUM DOTS THOMAS ANDREEV, NGUYEN QUANG LIEM, YUJI HORI,
MITSUHIRO TANAKA, OSAMU ODA, DANIEL LE SI DANG, AND BRUNO DAUDIN
2026-2029 QUANTUM KINETIC THEORY OF PHONON-ASSISTED CARRIER TRANSITIONS
IN NITRIDE BASED QUANTUM-DOT SYSTEMS J. SEEBECK, T. R. NIELSEN, M.
LORKE, P. GAERTNER, AND F. JAHNKE 2030-2033 TB-DOPED GAN QUANTUM DOTS
GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY YUJI HORI, THOMAS
ANDREEV, DENIS JALABERT, MITSUHIRO TANAKA, OSAMU ODA, DANIEL LE SI DANG,
AND BRUNO DAUDIN 2034-2037 MICROSCOPIC THEORY OF CARRIER-CARRIER
SCATTERING IN NITRIDE BASED QUANTUM-DOT SYSTEMS T. R NIELSEN, J.
SEEBECK, M. LORKE, P. GAERTNER, AND F. JAHNKE 2038-2042 LOCALIZATION OF
NON-EQUILIBRIUM CARRIERS IN DEEP INGAN QUANTUM DOTS AND ITS IMPACT ON
THE DEVICE PERFORMANCE D. S. SIZOV, V. S. SIZOV, V. V. LUNDIN, E. E.
ZAVARIN, A. F. TSATSUL NIKOV, A. S. VLASOV, YU. G. MUSIKHIN, N. N.
LEDENTSOV, A. M. MINTAIROV, K. SUN, AND J. MERZ 2043-2047
MICROPHOTOLUMINESCENCE OF GAN/ALN QUANTUM DOTS GROWN BY MBE K. S.
ZHURAVLEV, D. D. REE, V. G. MANSUROV, A. YU. NIKITIN, P. P. PASKOV, AND
P.-O. HOLTZ . . 2048-2051 QUANTUM CONFINED STARK EFFECT IN VERTICALLY
CORRELATED GAN/ALN QUANTUM DOTS S. P. LEPKOWSKI AND G. JURCZAK 2052-2055
INFLUENCE OF STACKING ON OPTICAL CHARACTERISTICS OF GAN/ALN
SELF-ORGANIZED QUANTUM DOTS B. J. KWON, J. S. HWANG, H. S. KWACK, Y. H.
CHO, N. GOGNEAU, B. DAUDIN, AND LE SI DANG . . 2056-2059 CARRIER
DYNAMICS IN SITE-CONTROLLED GA! -JNJNF QUANTUM DOTS M. JETTER, V.
PEREZ-SOLOERZANO, A. GROENING, H. GRAEBELDINGER, M. UBL, AND H. SCHWEIZER .
. . . 2060-2064 CONTENTS 1373 SURFACE ENHANCED RAMAN SCATTERING BY GAN
NANOCOLUMNS A. G. MILEKHIN, R. MEIJERS, T. RICHTER, R. CALARCO, H. LUETH,
B. A. PAEZ SIERRA, AND D. R. T. ZAHN 2065 -2068 INGAN BLUE
CATHODOLUMINESCENCE PHOSPHORS SYNTHESIZED WITH LONG REACTION TIME IN A
NEW REACTOR HISASHI KANIE, SHINGO KOBAYASHI, AND YUJI SEMA 2069-2072
STRUCTURAL AND OPTICAL CHARACTERIZATION OF ALJN^GA^^N QUANTUM DOTS V.
PEREZ-SOLOERZANO, A. GROENING, H. SCHWEIZER, AND M. JETTER 2073-2077
OPTICAL PROPERTIES OF INGAN/GAN QUANTUM WELLS ON SAPPHIRE AND BULK GAN
SUBSTRATE M. DWORZAK, T. STEMPEL, A. HOFFMANN, G. FRANSSEN, S. GRZANKA,
T. SUSKI, R. CZERNECKI, M. LESZCZYNSKI, AND I. GRZEGORY 2078-2081
EXCITON DYNAMICS IN NONPOLAR (1120) INGAN/GAN MULTIPLE QUANTUM WELLS
GROWN ON GAN TEMPLATES PREPARED BY LATERAL EPITAXIAL OVERGROWTH T.
ONUMA, A. CHAKRABORTY, B. A. HASKELL, S. KELLER, T. SOTA, U. K. MISHRA,
S. P. DENBAARS, J. S. SPECK, S. NAKAMURA, AND S. F. CHICHIBU 2082-2086
ELECTRICAL AND RECOMBINATION PROPERTIES AND DEEP TRAPS SPECTRA IN MOCVD
ELOG GAN LAYERS IN-HWAN LEE, A. Y. POLYAKOV, N. B. SMIRNOV, A. V.
GOVORKOV, A. V. MARKOV, AND S. J. PEARTON 2087-2090 TWO-DIMENSIONAL
ELECTRON GAS IN CUBIC AL^GAI _ JSJ/GAN HETEROSTRUCTURES S. POTTHAST, J.
SCHOERMANN, J. FERNANDEZ, D. J. AS, K. LISCHKA, H. NAGASAWA, AND M. ABE .
. . 2091-2094 PROLONGED KINETICS OF PHOTOLUMINESCENCE OF TWO-DIMENSIONAL
ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURE T. S. SHAMIRZAEV, N. S.
KORZHAVINA, V. G. MANSUROV, V. V. PREOBRAZHENSKII, AND K. S. ZHURAVLEV
2095-2098 STUDY OF EXCITON HOPPING IN ALGAN EPILAYERS BY
PHOTOLUMINESCENCE SPECTROSCOPY AND MONTE CARLO SIMULATION G. TAMULAITIS,
K. KAZLAUSKAS, A. ZUKAUSKAS, J. MICKEVICIUS, M. S. SHUR, R. S. QHALID
FAREED, J. P. ZHANG, AND R. GASKA 2099-2102 DIFFUSION LENGTHS IN GAN
OBTAINED FROM STEADY STATE PHOTOCARRIER GRATINGS (SSPG) M. NIEHUS AND R.
SCHWARZ 2103-2108 CARRIER DYNAMICS OF OPTICAL EMISSION FROM
TWO-DIMENSIONAL ELECTRON GAS IN UNDOPED ALGAN/GAN SINGLE HETEROJUNCTIONS
H. S. KWACK, Y. H. CHO, G. H. KIM, M. R. PARK, D. H. YOUN, S. B. BAE,
K.-S. LEE, J. H. LEE, ANDJ. H.LEE 2109-2112 OPTICAL CHARACTERISTICS OF
TWO-DIMENSIONAL ELECTRONS IN SINGLE AND MULTIPLE AL X GA! _ X N/GAN
HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION SUN-MO
KIM, HO-SANG KWACK, SUN-WOONG HWANG, YONG-HOON CHO, H. I. CHO, J. H.
LEE, AND KANG L. WANG 2113-2116 BELOW BANDGAP TRANSITIONS IN AN
ALGAN/GAN TRANSISTOR HETEROSTRUCTURE OBSERVED BY PHOTOREFLECTANCE
SPECTROSCOPY R. KUDRAWIEC, M. SYPEREK, J. MISIEWICZ, M. RUDZINSKI, A. P.
GRZEGORCZYK, P. R. HAGEMAN, AND P. K. LARSEN 2117-2120
CATHODOLUMINESCENCE AND ELECTROPHYSICAL CHARACTERIZATION OF AL^GA, _ X N
EPILAYERS V. I. KOZLOVSKY, Y. K. SKASYRSKY, Y. DIKME, H. KAIISCH, R. H.
JANSEN, V. G. LITVINOV, ANDM. HEUKEN 2121-2124 DEFECT DENSITY DEPENDENCE
OF LUMINESCENCE EFFICIENCY AND LIFETIMES IN ALGAN ACTIVE REGIONS
EXHIBITING ENHANCED EMISSION FROM NANOSCALE COMPOSITIONAL
INHOMOGENEITIES G. A. GARRETT, A. V. SAMPATH, C. J. COLLINS, E. D.
READINGER, W. L. SARNEY, H. SHEN, M. WRABACK, V. SOUKHOVEEV, A. USIKOV,
AND V. DMITRIEV 2125-2128 1374 CONTENTS PHOTONIC DEVICES DEGRADATION OF
BLUE LEDS RELATED TO STRUCTURAL DISORDER A. V. KAMANIN, A. G. KOLMAKOV,
P. S. KOP EV, G. A. ONUSHKIN, A. V. SAKHAROV, N. M. SHMIDT, D. S. SIZOV,
A. A. SITNIKOVA, A. L. ZAKGEIM, R. V. ZOLOTAREVA, AND A. S. USIKOV
2129-2132 HIGH QUALITY TIN ZINC OXIDE/AG OHMIC CONTACTS FOR UV FLIP-CHIP
LIGHT-EMITTING DIODES HYUN-GI HONG, K.-Y. BAN, JUNE-0 SONG, J. CHO, Y.
PARK, J. S. KWAK, IAN T. FERGUSON, AND TAE-YEON SEONG 2133-2136
FABRICATION AND CHARACTERIZATION OF INGAN RESONANT-CAVITY LIGHT-EMITTING
DIODES ON SILICON SUBSTRATES SHIH-YUNG HUANG, RAY-HUA HORNG, WEI-KAI
WANG, AND DON-SING WUU 2137-2140 INGAN-BASED LIGHT-EMITTING DIODES GROWN
ON GROOVED SAPPHIRE SUBSTRATES WEI-KAI WANG, DON-SING WUU, SHU-HEI LIN,
SHIH-YUNG HUANG, AND RAY-HUA HORNG . . . . 2141-2144 TEMPERATURE
CURRENT-VOLTAGE CHARACTERISATION OF MOCVD GROWN INGAN/GAN MQW LEDS
GRIGORE MOLDOVAN, ANDREW PHILLIPS, E. J. THRUSH, AND COLIN J. HUMPHREYS
2145-2148 MICRO-EL STUDYING OF HIGH POWER BLUE LEDS G. A. ONUSHKIN, A.
L. ZAKGEIM, D. A. ZAKGEIM, I. V. ROZHANSKY, A. F. TSATSULNIKOV, W. V.
LUNDIN, AND D. S. SIZOV 2149-2152 NITRIDE-BASED LIGHT EMITTING DIODES
WITH QUATERNARY P-AHNGAN SURFACE LAYERS C. H. KUO, S. J. CHANG, G. C.
CHI, K. T. LAM, AND Y. S. SUN 2153-2155 EVALUATION OF WAVELENGTH SHIFTS
OF GREEN AND BLUE LIGHT EMITTING DIODES WITH INN/GAN MULTIPLE QUANTUM
WELLS JE WON KIM, KYU HAN LEE, AND SANGSU HONG 2156-2159 ANALYSIS OF
DEPENDENCE OF ELECTROLUMINESCENCE EFFICIENCY OF AHNGAN LED
HETEROSTRUCTURES ON PUMPING I. V ROZHANSKY AND D. A. ZAKHEIM 2160-2164
LIGHT EXTRACTION PROCESS IN MOTH-EYE STRUCTURE H. KASUGAI, K. NAGAMATSU,
Y. MIYAKE, A. HONSHIO, T. KAWASHIMA, K. IIDA, M. IWAYA, S. KAMIYAMA, H.
AMANO, I. AKASAKI, H. KINOSHITA, AND H. SHIOMI 2165-2168 IMPROVEMENT OF
LUMINOUS INTENSITY OF INGAN LIGHT EMITTING DIODES GROWN ON HEMISPHERICAL
PATTERNED SAPPHIRE JAE-HOON LEE, JEONG-TAK OH, JIN-SUB PARK, JE-WON KIM,
YONG-CHUN KIM, JEONG-WOOK LEE, AND HYUNG-KOUN CHO 2169-2173 THERMAL
ANALYSIS OF GAN-BASED LASER DIODE PACKAGE W. J. HWANG, T. H. LEE, O. H.
NAM, H. K. KIM, J. S. KWAK, Y. J. PARK, AND M. W. SHIN. . . . 2174-2177
ANALYSIS OF OPTICAL LOSS ON BLUE-VIOLET LASER DIODES J. K. SON, J. S.
HWANG, S. N. LEE, T. SAKONG, H. PAEK, S. CHAE, H. K. KIM, O. NAM, J. Y.
KIM, Y. H. CHO, AND Y. PARK 2178-2181 PHOTOELECTROCHEMICAL SIDEWALL
ETCHING ENHANCES LIGHT OUTPUT POWER IN GAN-BASED LIGHT EMITTING DIODES
C. F. LIN, J. J. DAI, R. H. JIANG, J. H. ZHENG, Z. J. YANG, C. C. YU,
AND W. C. LEE 2182-2186 VARIATION OF THERMAL RESISTANCE WITH INPUT POWER
IN LEDS LIANQIAO YANG, JIANZHENG HU, LAN KIM, AND MOO WHAN SHIN
2187-2190 MOCVD OF INGAN-BASED LIGHT EMITTING STRUCTURES ON SILICON
SUBSTRATES WITH STRAIN OPTIMIZED BUFFER LAYERS USING LONG AI
PRE-DEPOSITION J.-Y. CLAMES, CH. GIESEN, T. MEYER, AND M. HEUKEN
2191-2194 CONTENTS 1375 COMPARATIVE OPTICAL STUDIES ON VIOLET INGAN
QUANTUM WELL LASER DIODE STRUCTURES GROWN ON SAPPHIRE AND GAN SUBSTRATES
J. S. HWANG, J. W. CHOI, A. GOKARNA, Y. H. CHO, J. K. SON, S. N. LEE, T.
SAKONG, H. S. PAEK, O. H. NAM, AND Y. PARK 2195-2198 COMPARISON OF HIGH
QUALITY GAN-BASED LIGHT-EMITTING DIODES GROWN ON ALUMINA-RICH SPINEL AND
SAPPHIRE SUBSTRATES FRANK TINJOD, PHILIPPE DE MIERRY, DAVID LANCEFIELD,
SEBASTIEN CHENOT, ERIC VIREY, JENNIFER L. STONE-SUNDBERG, MILAN R.
KOKTA, AND DAMIEN PAUWELS 2199-2202 CARRIER CAPTURE AND ESCAPE PROCESSES
IN (IN,GA)N SINGLE-QUANTUM-WELL DIODE UNDER FORWARD BIAS CONDITION BY
PHOTOLUMINESCENCE SPECTROSCOPY A. SATAKE, K. SOEJIMA, H. AIZAWA, AND K.
FUJIWARA 2203-2206 LOW RESISTANCE AND HIGHLY REFLECTIVE OHMIC CONTACTS
TOP-TYPE GAN USING TRANSPARENT INTERLAYERS FOR FLIP-CHIP LIGHT EMITTING
DIODES JUNE-O SONG, J. S. KWAK, HYUN-GI HONG, IAN T. FERGUSON, AND
TAE-YEON SEONG 2207-2210 INVESTIGATION OF OPTICAL-OUTPUT-POWER
DEGRADATION IN 365-NM UV-LEDS TAKASHI MUKAI, DAISUKE MORITA, MASASHI
YAMAMOTO, KAZUYUKI AKAISHI, KOUSUKE MATOBA, KATSUHIRO YASUTOMO, YOSHIO
KASAI, MASAHIKO SANO, AND SHIN-ICHI NAGAHAMA 2211-2214 CARRIER
CONFMEMENT EFFECT ENHANCED BY ALGAN/GAN MULTI-QUANTUM BARRIER IN AIINGAN
BASED HIGH POWER BLUE-VIOLET LASER DIODES SUNG-NAM LEE, S. Y. CHO, K. H.
HA, K. K. CHOI, T. JANG, S. H. CHAE, H. K. KIM, H. S. PAEK, Y. J. SUNG,
T. SAKONG, J. K. SON, H. Y. RYU, Y. H. KIM, E. YOON, O. H. NAM, AND Y.
PARK . . 2215-2218 HEXAGONALLY-CLOSED-PACKED MICRO-LIGHT-EMITTING DIODES
H. W. CHOI AND S. J. CHUA 2219-2222 BROADBAND SPECTRALLY DYNAMIC SOLID
STATE ILLUMINATION SOURCE DAVID B. NICOL, ALI ASGHAR, SHALINI GUPTA, HUN
KANG, MING PAN, MARTIN STRASSBURG, CHRIS SUMMERS, AND IAN T. FERGUSON
2223-2226 FIRST INGAN/GAN THIN FILM LED USING SICOI ENGINEERED SUBSTRATE
J. DORSAZ, B. FAURE, J.-F. CARLIN, M. MOSCA, P. GILET, F. LETERTRE, S.
BRESSOT, H. LARHECHE, ANDP. BOVE 2227-2230 MAGNETIC PROPERTIES GROWTH OF
FE DOPED SEMI-INSULATING GAN ON SAPPHIRE AND 4H-SIC BY MOCVD M.
RUDZINSKI, V. DESMARIS, P. A. VAN HAI, J. L. WEYHER, P. R. HAGEMAN, K.
DYNEFORS, T. C. RODLE, H. F. F. JOS, H. ZIRATH, AND P. K. LARSEN
2231-2236 OPTICAL STUDIES OF MOCVD-GROWN GAN-BASED FERROMAGNETIC
SEMICONDUCTOR EPILAYERS AND DEVICES M. H. KANE, M. STRASSBURG, W. E.
FENWICK, A. ASGHAR, J. SENAWIRATNE, D. AZAMAT, Z. HU, E. MALGUTH, S.
GRAHAM, U. PERERA, W. GEHLHOFF, A. HOFFMANN, N. DIETZ, C. J. SUMMERS,
AND I. T. FERGUSON 2237-2240 INVESTIGATION OF OPTICAL PHONONS AND
ELECTRONIC PROPERTIES OF GROUP III-V NITRIDE MULTI QUANTUM WELLS BY
USING FAR INFRARED MAGNETOPLASMON SPECTROSCOPY S. FARJAMI SHAYESTEH, A.
RAHMANI, AND T. J. PARKER 2241-2245 INFLUENCE OF THE MAGNETIC FIELD ON
THE EFFECTIVE MASS OF THE TWO-DIMENSIONAL ELECTRON GAS IN ALGAJ _ X
N/GAN HETEROSTRUCTURES N. TANG, B. SHEN, M. J. WANG, Z. J. YANG, K. XU,
G. Y. ZHANG, Y. S. GUI, B. ZHU, S. L. GUO, J. H. CHU, K HOSHINO, AND Y.
ARAKAWA 2246-2249 1376 CONTENTS MAGNETIC, OPTICAL AND ELECTRICAL
PROPERTIES OF GAN AND A1N DOPED WITH RARE-EARTH ELEMENT GD S. W. CHOI,
Y. K. ZHOU, S. EMURA, X. J. LEE, N. TERAGUCHI, A. SUZUKI, AND H. ASAHI
2250-2253 ELECTRONIC DEVICES PERFORMANCE OF ALGAN/GAN HETEROJUNCTION
FETS FOR MICROWAVE POWER APPLICATIONS (INVITED) H. MIYAMOTO 2254-2260 AN
ALGAN/GAN TWO-COLOR PHOTODETECTOR BASED ON AN ALGAN/GAN/SIC HEMT LAYER
STRUCTURE M. MARSO, A. FOX, G. HEIDELBERGER, J. BERNAET, AND H. LUETH
2261-2264 CAPACITANCE CHARACTERIZATION OF ALN/GAN DOUBLE-BARRIER
RESONANT TUNNELLING DIODES A. M. KURAKIN, S. A. VITUSEVICH, S. V.
DANYLYUK, A. V. NAUMOV, C. T. FOXON, S. V. NOVIKOV, N. KLEIN, H. LUETH,
AND A. E. BELYAEV 2265-2269 HYDROGEN GENERATION FROM AQUEOUS WATER USING
N-GAN BY PHOTOASSISTED ELECTROLYSIS KATSUSHI FUJII AND KAZUHIRO OHKAWA
2270-2273 PIEZOELECTRIC PROPERTIES OF THIN A1N LAYERS FOR MEMS
APPLICATION DETERMINED BY PIEZORESPONSE FORCE MICROSCOPY K. TONISCH, V.
CIMALLA, CH. FOERSTER, D. DONTSOV, AND O. AMBACHER 2274-2277 NARROW-BAND
400 NM MSM PHOTODETECTORS USING A THIN INGAN LAYER ON A GAN/SAPPHIRE
STRUCTURE J. OHSAWA, T. KOZAWA, O. FUJISHIMA, ANDH. ITOH 2278-2282
GAN-BASED SCHOTTKY DIODES FOR HYDROGEN SENSING IN TRANSFORMER OIL PETER
SANDVIK, ELENA BABES-DORNEA, ANIK ROY TRUDEL, MARIUS GEORGESCU, VINAYAK
TILAK, AND DANIEL RENAUD 2283-2286 ALGAN METAL-SEMICONDUCTOR-METAL
STRUCTURE FOR PRESSURE SENSING APPLICATIONS Z. HASSAN, Y. C. LEE, S. S.
NG, F. K. YAM, Y. LIU, Z. RANG, M. Z. KAUSER, P. P. RUEDEN, AND M. I.
NATHAN 2287-2290 SUPPRESSION OF GATE LEAKAGE CURRENT IN GAN MOS DEVICES
BY PASSIVATION WITH PHOTO-GROWN GA 2 0 3 H.-M. WU AND L.-H. PENG
2291-2294 FABRICATION AND CHARACTERIZATION OF INDIUM-TIN-OXIDE/GAN
VISIBLE-BLIND UV DETECTORS H. F. LUI,W. K FONG,C. SURYA, C. H. CHEUNG,
AND A. B. DJURISIC 2295-2298 FABRICATION AND CHARACTERIZATION OF
NI-BASED SCHOTTKY-TYPE AL X GAI _JN ULTRAVIOLET PHOTODETECTORS WITH
DIFFERENT BUFFER CONDITIONS KI YON PARK, BONG JOON KWON, JEONG HWAN SON,
AND YONG-HOON CHO 2299-2302 SCREENING OF POLARIZATION INDUCED ELECTRIC
FIELDS IN BLUE/VIOLET INGAN/GAN LASER DIODES BY SI DOPING IN QUANTUM
BARRIERS REVEALED BY HYDROSTATIC PRESSURE G. FRANSSEN, T. SUSKI, P.
PERLIN, R. BOHDAN, A. BERCHA, W. TRZECIAKOWSKI, I. MAKAROWA, R.
CZERNECKI, M. LESZCZYHSKI, AND I. GRZEGORY 2303-2306 PIEZORESISTIVE AND
PIEZOELECTRIC EFFECTS IN GAN V. TILAK, A. VERTIATCHIKH, J. JIANG, N.
REEVES, AND S. DASGUPTA 2307-2311 ALGAN/GAN/INGAN/GAN HEMTS WITH AN
INGAN-NOTCH J. LIU, Y. G. ZHOU, J. ZHU, K M. LAU, AND K. J. CHEN
2312-2316 HIGH TEMPERATURE CHARACTERISTICS OF DOPED CHANNEL ALGAN/GAN
MIS-HFETS WITH THIN ALGAN BARRIER LAYER C. X. WANG, N. MAEDA, M. HIROKI,
Y. YOKOYAMA, T. MAKIMOTO, T. KOBAYASHI, AND T. ENOKI 2317-2320 INFLUENCE
OF MACRO DEFECTS IN SIC SUBSTRATE ON ALGAN/GAN HEMT DC CHARACTERISTICS
H. SAZAWA, T. MITANI, H. BANG, K. HIRATA, M. KOSAKI, K. FURUTA, T.
TSUCHIYA, K. HIKOSAKA, S. NAKASHIMA, AND H. OKUMURA 2321-2324 CONTENTS
1377 QUALITY AND UNIFORMITY ASSESSMENT OF ALGAN/GAN QUANTUM WELLS AND
HEMT HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY WITH AMMONIA
SOURCE Y. CORDIER, F. PRUVOST, F. SEMOND, J. MASSIES, M. LEROUX, P.
LORENZINI, AND C. CHAIX 2325-2328 LOW-FREQUENCY NOISE IN ALGAN/GAN HEMT
STRUCTURES WITH A1N THIN FILM LAYER S. A. VITUSEVICH, O. A. ANTONIUK, M.
V. PETRYCHUK, S. V. DANYLYUK, A. M. KURAKIN, A. E. BELYAEV, AND N. KLEIN
2329-2332 SCHOTTKY GATE EFFECTS ON TRANSPORT PROPERTIES
OFALO.35GAO.65N/GAN HETEROSTRUCTURES A. ASGARI, M. KALAFI, AND L.
FARAONE 2333-2337 HIGH AND LOW ENERGY PROTON IRRADIATION EFFECTS ON
ALGAN/GAN HFETS G. SONIA, E. RICHTER, R. LOSSY, M. MAI, J. SCHMIDT, M.
WEYERS, G. TRAENKLE, A. DENKER, J. OPITZ-COUTUREAU, G. PENSL, I. BRAUER,
AND H. P. STRUNK 2338-2341 ADVANCED BUFFERS FOR ALGAN/GAN HEMT AND
INGAN/GAN MQW ON SILICON SUBSTRATES Y. DIKME, M. FIEGER, M. EICKELKAMP,
C. GIESEN, E. V. LUTSENKO, G P. YABLONSKII, A. SZYMAKOWSKI, F. O.
JESSEN, A. VESCAN, H. KAIISCH, M. HEUKEN, AND R. H. JANSEN 2342-2345
ANALYSIS OF BUFFER-TRAPPING EFFECTS ON CURRENT COLLAPSE OF GAN FETS K.
HORIO, H. TAKAYANAGI, AND H. NAKANO 2346-2349 AN ANALYTICAL MODEL FOR
GAN MESFET S USING NEW VELOCITY-FIELD DEPENDENCE SNEHAKABRA, HARSUPREET
KAUR, SUBHASIS HALDAR, MRIDULA GUPTA, ANDR. S. GUPTA 2350-2355 A SURFACE
TRAP MODEL AND ITS APPLICATION TO ANALYSIS OF III-NITRIDE HEMT
PERFORMANCE KIRILL A. BULASHEVICH AND SERGEY YU. KARPOV 2356-2359 EFFECT
OF EPITAXIAL LAYER CRYSTAL QUALITY ON DC AND RF CHARACTERISTICS OF
ALGAN/GAN SHORT-GATE HEMTS K. SHIOJIMA, T. MAKIMURA, T. MARUYAMA, T.
SUEMITSU, N. SHIGEKAWA, M. HIROKI, AND H. YOKOYAMA 2360-2363 ION
IMPLANTATION DOPING FOR ALGAN/GAN HEMTS MUNEYOSHI SUITA, TAKUMANANJO,
TOSHIYUKI OISHI, YUJI ABE, AND YASUNORI TOKUDA 2364-2367
ENHANCEMENT-MODE ALGAN/GAN HEMTS ON SILICON SUBSTRATE SHUO JIA, YONG
CAI, DELIANG WANG, BAOSHUN ZHANG, KEI MAY LAU, AND KEVIN J. CHEN . . . .
2368-2372 ALGAN/GAN HIGH-ELECTRON-MOBILITY TRANSISTORS ON SAPPHIRE WITH
FE-DOPED GAN BUFFER LAYER BY MOVPE T. AGGERSTAM, M. SJOEDIN, AND S.
LOURDUDOSS 2373-2376 FURTHER PAPERS OF CONFERENCE ICNS-6 ARE PUBLISHED
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STUTZMANN GROWTH MOLECULAR BEAM EPITAXY FOR HIGH-EFFICIENCY NITRIDE
OPTOELECTRONICS J. HEFFERNAN, M. KAUER, J. WINDLE, S. E. HOOPER, V.
BOUSQUET, C. ZELLWEGER, AND J. M. BARNES 1379-1382 RADIO-FREQUENCY MBE
GROWTH OF CUBIC GAN ON BP(001)/SI(001) HETERO-STRUCTURE T. KIKUCHI, A.
S. SOMINTAC, M. ODAWARA, T. UDAGAWA, AND T. OHACHI 1383-1387 NOVEL
BUFFER LAYER FOR THE GROWTH OF GAN ON C-SAPPHIRE WOOKHYUN LEE, SEOGWOO
LEE, HIROKI GOTO, HYUNCHUL KO, MEOUNGWHAN CHO, AND TAKAFUMI YAO
1388-1391 CRITICAL ASPECTS OF HIGH TEMPERATURE MOCVD GROWTH OF A1N
EPILAYERS ON 6H-SIC SUBSTRATES K. BALAKRISHNAN, N. FUJIMOTO, T. KITANO,
A. BANDOH, M. IMURA, K. NAKANO, M. IWAYA, S. KAMIYAMA, H. AMANO, I.
AKASAKI, T. TAKAGI, T. NORO, K. SHIMONO, T. RIEMANN, AND J. CHRISTEN
1392-1395 TWO TO THREE DIMENSIONAL TRANSITIONS OF INGAN AND THE IMPACT
OF GAN OVERGROWTH T. YAMAGUCHI, S. EINFELDT, S. GANGOPADHYAY, A.
PRETORIUS, A. ROSENAUER, J. FALTA, ANDD. HOMMEL 1396-1399 EFFECT OF
GROWTH TEMPERATURE ON ALGALNN LAYERS: A TEM ANALYSIS D. MENDEZ, M.
ALBRECHT, E. MONROY, D. JALABERT, H. P. STRUNK, A. M. SANCHEZ, AND R.
GARCIA 1400-1403 RADIO-FREQUENCY MBE GROWTH OF CUBIC GAN ON
3C-SIC(001)/SI(001) TEMPLATE T. OHACHI, T. KIKUCHI, A. SOMINTAC, S.
YAMAGUCHI, T. YASUDA, AND M. WADA 1404-1407 EFFECT OF CARRIER GAS ON GAN
EPILAYER CHARACTERISTICS Y. S. CHO, H. HARDTDEGEN, N. KALUZA, N.
THILLOSEN, R. STEINS, Z. SOFER, AND H. LUETH 1408-1411 LARGE BANDGAP
BOWING OF IN X GA!_ X N FILMS AND GROWTH OF BLUE/GREEN IN^GA, _ X N/GAN
MQWS ON HIGHLY TENSILE STRAINED GAN/SI(L 11) HETERO STRUCTURES KANG JEA
LEE, TAE SU OH, TAE KI KIM, GYE MO YANG, AND KEE YOUNG LIM 1412-1415 SI
DIFFUSION IN EPITAXIAL GAN RAFAL JAKIELA, ADAM BARCZ, EWA DUMISZEWSKA,
AND ANDRZEJ JAGODA 1416-1419 DOPING EFFICIENCY AND SEGREGATION OF SI IN
A1N GROWN BY MOLECULAR BEAM EPITAXY V. LEBEDEV, F. M. MORALES, H.
ROMANUS, G. ECKE, V. CIMALLA, M. HIMMERLICH, S. KRISCHOK, J. A.
SCHAEFER, AND O. AMBACHER 1420-1424 P-TYPE CONDUCTION IN A C-DOPED
(1101)GAN GROWN ON A 7-DEGREE-OFF ORIENTED (001)SI SUBSTRATE BY
SELECTIVE MOVPE T. HIKOSAKA, N. KOIDE, Y. HONDA, M. YAMAGUCHI, AND N.
SAWAKI 1425-1428 1364 CONTENTS ON THE INCORPORATION MECHANISM OF FE IN
GAN GROWN BY METAL-ORGANIC VAPOUR PHASE EPITAXY R. S. BALMER, D. E. J.
SOLEY, A. J. SIMONS, J. D. MACE, L. KOKER, P. O. JACKSON, D. J. WALLIS,
M. J. UREN, AND T. MARTIN 1429-1434 N-TYPE CONDUCTIVITY CONTROL OF ALGAN
WITH HIGH AI MOLE FRACTION TAKUYA KATSUNO, YUHUAI LIU, DABING LI, HIDETO
MIYAKE, KAZUMASA HIRAMATSU, TOMOHIKO SHIBATA, AND MITSUHIRO TANAKA
1435-1438 FREESTANDING TWO INCH C-PLANE GAN LAYERS GROWN ON (100)
Y-LITHIUM ALUMINIUM OXIDE BY HYDRIDE VAPOUR PHASE EPITAXY E. RICHTER,
CH. HENNIG, U. ZEHNER, M. WEYERS, G. TRAENKLE, P. REICHE, S. GANSCHOW, R
UECKER, ANDK. PETERS 1439-1443 INN-BASED LAYERS GROWN BY MODIFIED HVPE
A. SYRKIN, A. USIKOV, V. SOUKHOVEEV, O. KOVALENKOV, V. IVANTSOV, V.
DMITRIEV, C. COLLINS, E. READINGER, N. SHMIDT, V. DAVYDOV, S. NIKISHIN,
V. KURYATKOV, D. SONG, D. ROSENBLADT, AND MARK HOLTZ 1444-1447 POLISHING
AND CHARACTERIZATION OF THICK A1N LAYERS GROWN ON SIC SUBSTRATES BY
STRESS CONTROL HYDRIDE VAPOR PHASE EPITAXY H. MANK, B. AMSTATT, D.
TUROVER, E. BELLET-AMALRIC, B. DAUDIN, V. IVANTSOV, V. DMITRIEV, AND V.
MASLENNIKOV 1448-1452 CRYSTALLIZATION OF FREE STANDING BULK GAN BY HVPE
B. LUCZNIK, B. PASTUSZKA, I. GRZEGORY, M. BOCKOWSKI, G. KAMLER, J.
DOMAGALA, G. NOWAK, P. PRYSTAWKO, S. KRUKOWSKI, AND S. POROWSKI
1453-1456 THERMODYNAMIC STUDY ON THE ROLE OF HYDROGEN DURING HYDRIDE
VAPOR PHASE EPITAXY OF ALXJA^JSI H. MURAKAMI, J. KIKUCHI, Y. KUMAGAI,
AND A. KOUKITU 1457-1460 GROWTH AND DOPING OF ALGAN AND
ELECTROLUMINESCENCE OF SAG-INGAN/ALGAN HETEROSTRUCTURE BY MIXED-SOURCE
HVPE K. H. KIM, H. S. AHN, M. YANG, K. S. JANG, S. L. HWANG, W. J. CHOI,
C. R. CHO, S. W. KIM, Y. HONDA, M. YAMAGUCHI, N SAWAKI, J. YOO, S. M.
LEE, AND M. KOIKE 1461-1465 BOWING OF THICK GAN LAYERS GROWN BY HVPE
USING ELOG CH. HENNIG, E. RICHTER, U. ZEIMER, M. WEYERS, AND G. TRAENKLE
1466-1470 HVPE GROWTH OF HIGH QUALITY GAN LAYERS PETER BRUECKNER, FRANK
HABEL, AND FERDINAND SCHOLZ 1471-1474 BENDING IN HVPE GAN FREE-STANDING
FILMS: EFFECTS OF LASER LIFT-OFF, POLISHING AND HIGH-PRESSURE ANNEALING
T. PASKOVA, V. DARAKCHIEVA, P. P. PASKOV, B. MONEMAR, M. BUKOWSKI, T.
SUSKI, N. ASHKENOV, M. SCHUBERT, AND D. HOMMEL 1475-1478 FABRICATION OF
THICK A1N FILM BY LOW PRESSURE HYDRIDE VAPOR PHASE EPITAXY YU-HUAI LIU,
TOMOAKI TANABE, HIDETO MIYAKE, KAZUMASA HIRAMATSU, TOMOHIKO SHIBATA, AND
MUTSUHIRO TANAKA 1479-1482 ALGAN EPITAXIAL LAYERS GROWN BY HVPE ON
SAPPHIRE SUBSTRATES V. SOUKHOVEEV, O. KOVALENKOV, L. SHAPOVALOVA, V.
IVANTSOV, A. USIKOV, V. DMITRIEV, V. DAVYDOV, AND A. SMIRNOV 1483-1486
GROWTH OF GAN ON PATTERNED THICK HVPE FREE STANDING GAN SUBSTRATES BY
HIGH PRESSURE SOLUTION METHOD M. BOCKOWSKI, I. GRZEGORY, G. NOWAK, B.
LUCZNIK, B. PASTUSZKA, G. KAMLER, M. WROEBLEWSKI, P. KWIATKOWSKI, K
JASIK, W. WAWER, S. KRUKOWSKI, AND S. POROWSKI 1487-1490 CONTENTS 1365
GROWTH OF AIN FILMS AND THEIR CHARACTERIZATION RAKESH B. JAIN, YING GAO,
JIANPING ZHANG, R. S. QHALEED FAREED, REMIS GASKA, JIAWEI LI,
ARULCHAKKRAVARTHI ARJUNAN, EDMUNDAS KUOKSTIS, JINWEI YANG, AND M. ASIF
KHAN 1491-1494 SPECIFIC HEAT CALCULATIONS OF III-N BULK MATERIALS A.
ALSHAIKHI AND G. P. SRIVASTAVA 1495-1498 PHOTOLUMINESCENCE OF A-PLANE
GAN: COMPARISON BETWEEN MOCVD AND HVPE GROWN LAYERS P. P. PASKOV, R.
SCHIFANO, T. MALINAUSKAS, T. PASKOVA, J. P. BERGMAN, B. MONEMAR, S.
FIGGE, D. HOMMEL, B. A. HASKEIL, P. T. FINI, J. S. SPECK, AND S.
NAKAMURA 1499-1502 IMPACT OF III/V RATIO ON POLYTYPE AND CRYSTALLINE
QUALITY OF AIN GROWN ON 4H-SIC (1120) SUBSTRATE BY MOLECULAR-BEAM
EPITAXY M. HORITA, J. SUDA, AND T. KIMOTO 1503-1506 EFFECTS OF
GAN-BUFFER ETCHING IN ATMOSPHERIC-PRESSURE MOVPE GROWTH OF INN ON
SAPPHIRE A. YAMAMOTO, Y. NAGAI, H. MIWA, AND A. HASHIMOTO 1507-1510
TOWARDS FABRICATION OF IN-POLAR INN FILMS AND INN/GAN MQWS WATARU
YAMAGUCHI, SONG-BEK CHE, NAOHIRO KIKUKAWA, YOSHIHIRO ISHITANI, AND
AKIHIKO YOSHIKAWA 1511-1514 RF-MBE GROWTH OF CUBIC INN FILMS ON MGO
(001) SUBSTRATES Y. IWAHASHI, H. YAGUCHI, A. NISHIMOTO, M. ORIHARA, Y.
HIJIKATA, AND S. YOSHIDA 1515-1518 A COMPARATIVE STUDY ON MOVPE INN
GROWN ON GA- AND N-POLARITY BULK GAN W. J. WANG, H. MIWA, A. HASHIMOTO,
AND A. YAMAMOTO 1519-1522 POLARITY AND MICROSTRUCTURE IN INN THIN LAYERS
GROWN BY MOVPE N. KUWANO, Y. NAKAHARA, AND H. AMANO 1523-1526 NH3/TMI
MOLAR RATIO DEPENDENCE OF ELECTRICAL AND OPTICAL PROPERTIES FOR
ATMOSPHERIC-PRESSURE MOVPE INN A. YAMAMOTO, H. MIWA, Y. SHIBATA, AND A.
HASHIMOTO 1527-1530 GROWTH OF INN ON 6H-SIC BY PLASMA ASSISTED MOLECULAR
BEAM EPITAXY APRIL S. BROWN, TONG-HO KIM, SOOJEONG CHOI, PAE WU, MICHAEL
MORSE, MARIA LOSURDO, MARIA M. GIANGREGORIO, GIOVANNI BRUNO, AND AKIHIRO
MOTO 1531-1535 DETERIORATION OF MOVPE INN FILMS ON SAPPHIRE DURING
GROWTH AND POST-GROWTH ANNEALING HIROSHI MIWA, AKIHIRO HASHIMOTO, AND
AKIO YAMAMOTO 1536-1539 STUDY ON INFLUENCE OF ATOMIC HYDROGEN
IRRADIATION ON GROWTH AND PROPERTIES OF N-POLARITY INN SONG-BEK CHE,
KOICHIRO AKASAKA, YOSHIHIRO ISHITANI, AND AKIHIKO YOSHIKAWA 1540-1543
TOWARDS A BETTER UNDERSTANDING OF NANO-ISLANDS FORMED DURING ATMOSPHERIC
PRESSURE MOVPE N. K. VAN DER LAAK, R. A. OLIVER, J. S. BARNARD, P. D.
CHERNS, M. J. KAPPERS, AND C. J. HUMPHREYS 1544-1547 INVESTIGATION OF
GROWTH MECHANISMS OF GAN QUANTUM DOTS ON (0001) AIN SURFACE BY AMMONIA
MBE V. G. MANSUROV, YU. G. GALITSYN, A. YU. NIKITIN, K. S. ZHURAVLEV,
AND PH. VENNEGUES . . . . 1548-1551 THREE METHODS FOR THE GROWTH OF
INGAN NANOSTRUCTURES BY MOVPE R. A. OLIVER, M. J. KAPPERS, N. K. VAN DER
LAAK, AND C. J. HUMPHREYS 1552-1556 GROWTH AND MORPHOLOGY OF MOVPE GROWN
INGAN/GAN ISLANDS S. GANGOPADHYAY, TH. SCHMIDT, S. EINFELDT, T.
YAMAGUCHI, D. HOMMEL, AND J. FALTA 1557-1560 GROWTH OF IN-POLAR AND
N-POLAR INN NANOCOLUMNS ON GAN TEMPLATES BY MOLECULAR BEAM EPITAXY
XINQIANG WANG, SONG-BEK CHE, YOSHIHIRO ISHITANI, AND AKIHIKO YOSHIKAWA
1561-1565 1366 CONTENTS DISLOCATION BEHAVIOUR IN ILL-NITRIDE EPITAXIAL
FILMS GROWN ON VICINAL SAPPHIRE (0001) SUBSTRATES X. Q. SHEN, H.
MATSUHATA, AND H. OKUMURA 1566-1569 THE EFFECT OF SI ON THE GROWTH MODE
OF GAN J. VON PEZOLD, R. A. OLIVER, M. J. KAPPERS, P. D. BRISTOWE, AND
C. J. HUMPHREYS 1570-1574 THE INITIAL GROWTH STAGE IN PVT GROWTH OF
ALUMINUM NITRIDE P. HEIMANN, B. M. EPELBAUM, M. BICKERMANN, S. NAGATA,
AND A. WINNACKER 1575-1578 INVESTIGATION OF A1N NUCLEATION LAYERS FOR
ALGAN/GAN HETEROSTRUCTURES ON 4H-SIC S. BOEYKENS, M. R. LEYS, M.
GERMAIN, K. CHENG, J. DERLUYN, B. VAN DAELE, G. VAN TENDELOO, R.
BELMANS, AND G. BORGHS 1579-1582 REAL TIME SPECTROSCOPIC ELLIPSOMETRY
INVESTIGATION OF HOMOEPITAXIAL GAN GROWN BY PLASMA ASSISTED MOLECULAR
BEAM EPITAXY TONG-HO KIM, SOOJEONG CHOI, PAE WU, APRIL BROWN, MARIA
LOSURDO, MARIA M. GIANGREGORIO, GIOVANNI BRUNO, AND AKIHIRO MOTO
1583-1586 INVESTIGATIONS ON LOCAL GA AND IN INCORPORATION OF GALNN
QUANTUM WELLS ON FACETS OF SELECTIVELY GROWN GAN STRIPES B. NEUBERT, F.
HABEL, P. BRUECKNER, F. SCHOLZ, M. SCHIRRA, M. FENEBERG, K. THONKE, T.
RIEMANN, J. CHRISTEN, M. BEER, J. ZWECK, G. MOUTCHNIK, AND M. JETTER
1587-1590 FABRICATION OF INN/ALINN MQWS BY RF-MBE W. TERASHIMA, S. B.
CHE, Y. ISHITANI, AND A. YOSHIKAWA 1591-1594 IN-PLANE ANISOTROPY IN
UNIAXIALLY-STRAINED GAN FILMS DETECTED BY OPTICAL DIFFRACTION TECHNIQUE
SATORU ADACHI, YASUNORI TODA, TETSURO ISHIGURO, KATSUYUKI HOSHINO, AND
YASUHIKO ARAKAWA 1595-1598 FABRICATION OF INN/INGAN MULTIPLE QUANTUM
WELL STRUCTURES BY RF-MBE M. KUROUCHI, H. NA, H. NAOI, D. MUTO, S.
TAKADO, T. ARAKI, T. MIYAJIMA, AND Y. NANISHI. . . 1599-1603 GROWTH OF
TERNARY AND QUATERNARY CUBIC IH-NITRIDES ON 3C-SIC SUBSTRATES J.
SCHOERMANN, S. POTTHAST, M. SCHNIETZ, S. F. LI, D. J. AS, AND K. LISCHKA
1604-1607 PREPARATION AND CHARACTERISATION OF TANTALUM CARBIDE AS AN
OPTIONAL CRUCIBLE MATERIAL FOR BULK ALUMINIUM NITRIDE CRYSTAL GROWTH VIA
PHYSICAL VAPOUR TRANSPORT C. HARTMANN, J. WOLLWEBER, M. ALBRECHT, AND I.
RASIN 1608-1612 INFLUENCE OF GAS COMPOSITION ON THE SYNTHESIS OF GALLIUM
NITRIDE POWDERS BY TWO-STAGE CHEMICAL VAPOR METHOD K. HARA, A. YONEMURA,
AND T. UCHIDA 1613-1616 GROWTH OF HIGH-QUALITY A1N AT HIGH GROWTH RATE
BY HIGH-TEMPERATURE MOVPE N. FUJIMOTO, T. KITANO, G. NARITA, N. OKADA,
K. BALAKRISHNAN, M. IWAYA, S. KAMIYAMA, H. AMANO, I. AKASAKI, K.
SHIMONO, T. NORO, T. TAKAGI, AND A. BANDOH 1617-1619 MODELING AND
EXPERIMENTAL ANALYSIS OF INGAN MOVPE IN THE AIXTRON AIX 200/4 RF-S
HORIZONTAL REACTOR E. V. YAKOVLEV, R. A. TALALAEV, R. W. MARTIN, C.
JEYNES, N. PENG, C. J. DEATCHER, AND I. M. WATSON 1620-1623 FABRICATION
OF GAN-BASED STRIPED STRUCTURES ALONG THE (1120) DIRECTION BY THE
COMBINATION OF RIE DRY-ETCHING AND KOH WET-ETCHING TECHNIQUES TO RECOVER
DRY-ETCHING DAMAGE MORIMICHI ITOH, TORA KINOSHITA, KOJI KAWASAKI,
MISAICHI TAKEUCHI, CHOSHIRO KOIKE, AND YOSHINOBU AOYAGI 1624-1628 A
CONTROL TECHNIQUE OF OXYGEN CONTAMINATION BY GA BEAM IRRADIATION IN INN
MOMBE GROWTH K. ISAMOTO, Y. UESAKA, A. YAMAMOTO, AND A. HASHIMOTO
1629-1632 CONTENTS 1367 ALGAN FILMS GROWN ON TRENCHED SAPPHIRE
SUBSTRATES USING A LOW-TEMPERATURE GANP BUFFER LAYER BY MOCVD K.
SUMIYOSHI, M. TSUKIHARA, S. KAWAMICHI, F. YAN, AND S. SAKAI 1633-1636
THERMALIZATION AND RECOMBINATION IN EXPONENTIAL BAND TAIL STATES M.
NIEHUS AND R. SCHWARZ 1637-1644 CURRENT CROWDING EFFECTS ON BLUE LED
OPERATION I. YU. EVSTRATOV, V. F. MYMRIN, S. YU. KARPOV, AND YU. N.
MAKAROV 1645-1648 MICROFABRICATION OF GAN GROOVE ON SAPPHIRE SUBSTRATE
TREATED SELECTIVELY BY ELECTRON-BEAM H. MATSUMURA, M. SUMIYA, Y. KAWAI,
M. TOMIKI, K. MURAKAMI, AND S. FUKE 1649-1652 STRUCTURAL AND ELECTRICA!
PROPERTIES RECENT RESULTS ON AIN GROWTH BY HVPE AND FABRICATION OF FREE
STANDING AIN WAFERS V. SOUKHOVEEV, O. KOVALENKOV, V. IVANTSOV, A.
SYRKIN, A. USIKOV, V. MASLENNIKOV, AND V. DMITRIEV 1653-1657
CHARACTERIZATION OF STRUCTURAL DEFECTS IN (1120) GAN FILMS GROWN ON
(1102) SAPPHIRE SUBSTRATES P. VENNEGUES, F. MATHAL, AND Z. BOUGRIOUA
1658-1661 DIFFRACTION ANOMALOUS FINE STRUCTURE INVESTIGATION OF INGAN
QUANTUM DOTS E. PISKORSKA, V. HOLY, M. SIEBERT, B. KRAUSE, T. H.
METZGER, TH. SCHMIDT, J. FALTA, T. YAMAGUCHI, AND D. HOMMEL 1662-1666
QUANTITATIVE STRAIN ANALYSIS OF GAN/AIN QUANTUM DOT MULTILAYERS E.
SARIGIANNIDOU, A. D. ANDREEV, E. MONROY, B. DAUDIN, AND J. L. ROUVIERE
1667-1670 EVALUATION OF STRAIN IN AIN THIN FILMS GROWN ON SAPPHIRE AND
6H-SIC BY METALORGANIC CHEMICAL VAPOR DEPOSITION NAOTO KATO AND TAKASHI
INUSHIMA 1671-1674 ELECTRONIC STATES IN NITRIDE SEMICONDUCTOR QUANTUM
DOTS: A TIGHT-BINDING APPROACH S. SCHULZ AND G. CZYCHOLL 1675-1678 TEM
ANALYSES OF WURTZITE INGAN ISLANDS GROWN BY MOVPE AND MBE A. PRETORIUS,
T. YAMAGUCHI, C. KUEBEL, R. KROGER, D. HOMMEL, AND A. ROSENAUER 1679-1682
REDUCED RESIDUAL STRESS IN GAN GROWN ON 3C-SIC/SI(L 11) TEMPLATES FORMED
BY C + -ION IMPLANTATION T. KOBAYASHI, N. SAWAZAKI, M. S. CHO, A.
HASHIMOTO, A. YAMAMOTO, AND Y. ITO 1683-1686 STRUCTURAL CHARACTERIZATION
OF INN QUANTUM DOTS GROWN BY METALORGANIC VAPOUR PHASE EPITAXY J. G.
LOZANO, D. GONZALEZ, A. M. SAENCHEZ, D. ARAUEJO, S. RUFFENACH, O. BRIOT,
AND R. GARCIA. . 1687-1690 ALN/GAN SUPERLATTICES: STRAIN RELAXATION E.
BELLET-AMALRIC, B. AMSTATT, AND B. DAUDIN 1691-1694 INVESTIGATION OF
THERMAL CONDUCTIVITY OF NITRIDE MIXED CRYSTALS AND SUPERLATTICES BY
MOLECULAR DYNAMICS TAKAHIRO KAWAMURA, YOSHIHIRO KANGAWA, AND KOICHI
KAKIMOTO 1695-1699 THERMODYNAMIC STABILITY OF IN 1 _ X _ ; ,GA X AL ,N
ON GAN AND INN YOSHIHIRO KANGAWA, KOICHI KAKIMOTO, TOMONORI ITO, AND
AKINORI KOUKITU 1700-1703 ELECTRICAL PROPERTIES OF NI/I-ALGAN/GAN
STRUCTURES AND INFLUENCE OF THERMAL ANNEALING T. SAWADA, N. KIMURA, K.
SUZUKI, K. IMAI, S.-W. KIM, AND T. SUZUKI 1704-1708 HIGH TEMPERATURE
CHARACTERIZATION OF PT-BASED SCHOTTKY DIODES ON ALGAN/GAN
HETEROSTRUCTURES J. PEDROS, R. CUERDO, R. LOSSY, N. CHATURVEDI, J.
WUERFL, AND F. CALLE 1709-1712 1368 CONTENTS EXPERIMENTAL EVIDENCE FOR
DRUDE-BOLTZMANN-LIKE TRANSPORT IN A TWO-DIMENSIONAL ELECTRON GAS IN AN
ALGAN/GAN HETEROSTRUCTURE JING-HAN CHEN, JYUN-YING LIN, JUNG-KAI TSAI,
HUN PARK, GIL-HO KIM, JUNGSEOK AHN, HYUN-ICK CHO, EUN-JIN LEE, JUNG-HEE
LEE, C.-T. LIANG, AND Y. F. CHEN 1713-1716 FORMATION OF LOW RESISTANCE
NONALLOYED OHMIC CONTACTS TO P-TYPE GAN BY KRF LASER IRRADIATION MIN-SUK
OH, JA-SOON JANG, SANG-HO KIM, AND TAE-YEON SEONG 1717-1720 THE
CONDUCTIVITY OF MG-DOPED INN V. CIMALLA, M. NIEBELSCHUETZ, G. ECKE, O.
AMBACHER, R. GOLDHAHN, H. LU, AND W. J. SCHAFF . . 1721 -1724 SURFACE
SEGREGATION OF SI AND MG DOPANTS IN MOVPE GROWN GAN FILMS REVEALED BY
X-RAY PHOTOEMISSION SPECTRO-MICROSCOPY TH. SCHMIDT, M. SIEBERT, J. I.
FLEGE, S. GANGOPADHYAY, A. PRETORIUS, R. RROEGER, S. FIGGE, L.
GREGORATTI, A. BARINOV, D. HOMMEL, AND J. FALTA 1725-1728 STRUCTURAL
INVESTIGATIONS OF GAN FILMS WITH X-RAY STANDING WAVES MICHAEL SIEBERT,
THOMAS SCHMIDT, JAN INGO FLEGE, SVEN EINFELDT, STEPHAN FIGGE, DETLEF
HOMMEL, AND JENS FALTA 1729-1732 NEW CORE CONFIGURATIONS OF THE C-EDGE
DISLOCATION IN WURTZITE GAN I. BELABBAS, J. CHEN, M. AKLI BELKHIR, P.
RUTERANA, AND G. NOUET 1733-1737 LOCAL STRUCTURAL CHARACTERIZATION OF
EPITAXIAL A-PLANE INGAN/GAN THIN FILMS BY TRANSMISSION ELECTRON
MICROSCOPY T. YAMAZAKI, K. KUSAKABE, N. NAKANISHI, K. OHKAWA, AND I.
HASHIMOTO 1738-1741 ANALYSIS OF THE LOCAL STRUCTURE OF ALN:MN USING
X-RAY ABSORPTION FME STRUCTURE MEASUREMENTS TAKAO MIYAJIMA, YOSHIHIRO
KUDO, TOMOYA URUGA, AND KAZUHIKO HARA 1742-1745 ANALYSIS OF THE LOCAL
STRUCTURE OF INN WITH A BANDGAP ENERGY OF 0.8 AND 1.9 EV AND ANNEALED
INN USING X-RAY ABSORPTION FME STRUCTURE MEASUREMENTS TAKAO MIYAJIMA,
YOSHIHIRO KUDO, AKIHIRO WAKAHARA, TOMOHIRO YAMAGUCHI, TSUTOMU ARAKI, AND
YASUSHI NANISHI 1746-1749 MECHANISMS OF BENDING OF THREADING
DISLOCATIONS IN MOVPE-GROWN GAN ON (0001) SAPPHIRE R. DATTA AND C. J.
HUMPHREYS 1750-1753 INVESTIGATION OF HYDROGEN IMPLANTATION INDUCED
BLISTERING IN GAN R. SINGH, I. RADU, U. GOESELE, AND S. H. CHRISTIANSEN
1754-1757 CONTROL OF LEAKAGE CURRENT IN ALGAN SCHOTTKY INTERFACES BY AN
ULTRATHIN AI LAYER MASAMITSU KANEKO AND TAMOTSU HASHIZUME 1758-1761
ELECTRICAL CHARACTERISTICS AND THERMAL STABILITY OF TI CONTACT TO P-GAN
C. K TAN, A. ABDUL AZIZ, Z. HASSAN, F. K. YAM, AND A. Y HUDEISH
1762-1766 WET CHEMICAL ETCHING OF A1N IN KOH SOLUTION I. CIMALLA, CH.
FOERSTER, V. CIMALLA, V. LEBEDEV, D. CENGHER, AND O. AMBACHER 1767-1770
ATOMIC STRUCTURE OF DISLOCATIONS IN NITRIDE SEMICONDUCTORS S. PETIT, A.
BERE, J. CHEN, I. BELABBAS, P. RUTERANA, AND G. NOUET 1771-1774
INVESTIGATION OF DEFECTS IN GAN WITH VARYING MG DOPING CONCENTRATIONS
TOSHIYUKI OBATA, NAOKI MATSUMURA, KIYOSHI OGIWARA, HIDEKI HIRAYAMA,
YOSHINOBU AOYAGI, AND KOJI ISHIBASHI 1775-1778 MULTIPLE DEFECTS IN GALNN
MULTIPLE QUANTUM WELLS GROWN ON ELO GAN LAYERS AND ON GAN SUBSTRATES S.
TOMIYA, O. GOTO, Y. HOSHINA, T. TANAKA, AND M. IKEDA 1779-1782 METAL
(NI, AU)-VACANCY COMPLEXES IN GAN J. VON PEZOLD AND P. D. BRISTOWE
1783-1786 CONTENTS 1369 REDUCTION OF STRAHL AND DISLOCATION DEFECTS IN
GAN LAYERS GROWN ON SI SUBSTRATE BY MOCVD USING A SUBSTRATE DEFECT
ENGINEERING TECHNIQUE M. JAMIL, ERIC IRISSOU, J. R. GRANDUSKY, V.
JINDAL, AND F. SHAHEDIPOUR-SANDVIK 1787-1791 DEVELOPMENT OF PIT-DEFECT
FREE SMOOTH A-PLANE GAN SURFACES ON R-PLANE SAPPHIRE USING METALORGANIC
CHEMICAL VAPOR DEPOSITION: A GROWTH MECHANISM STUDY VIBHU JINDAL, JAMES
GRANDUSKY, MUHAMMAD JAMIL, ERIC IRISSOU, FATEMEH SHAHEDIPOUR SANDVIK,
KEVIN MATOCHA, AND VINAYAK TILAK 1792-1797 OPTICAL CAVITY FORMATION ON
GAN USING A CONVENTIONAL RIE SYSTEM F. G. KALAITZAKIS, G.
KONSTANTINIDIS, K. TSAGARAKI, M. ANDROULIDAKI, AND N. T. PELEKANOS . . .
1798-1802 STRUCTURAL ANALYSIS OF PYRAMIDAL DEFECTS IN MG-DOPED GAN A.
PRETORIUS, M. SCHOWALTER, N. DANEU, R. KROGER, A. RECNIK, AND A.
ROSENAUER 1803-1806 MORPHOLOGICAL EVALUATION OF EPITAXIAL GAN GROWN ON
R-PLANE SAPPHIRE BY METALORGANIC VAPOR-PHASE EPITAXY K. KUSAKABE AND K
OHKAWA 1807-1810 INGAN QUANTUM WELL EPILAYERS MORPHOLOGICAL EVOLUTION
UNDER A WIDE RAENGE OF MOCVD GROWTH PARAMETER SETS D. I. FLORESCU, S. M.
TING, V. N. MERAI, A. PAREKH, D. S. LEE, E. A. ARMOUR, AND W. E. QUINN
1811-1814 PINHOLES IN MULTIPLE QUANTUM WELL IN^GAI _^N/GAN WITH LOW IN
CONCENTRATION FLORENCE GLOUX, PIERRE RUTERANA, AND GERARD NOUET
1815-1818 EXTREMELY SMOOTH SURFACE MORPHOLOGY OF GAN-BASED LAYERS ON
MISORIENTED GAN SUBSTRATES FOR HIGH-POWER BLUE-VIOLET LASERS KOICHI
TACHIBANA, HAJIMENAGO, AND SHIN-YANUNOUE 1819-1822 STRUCTURAL AND
ELECTRICAL CHARACTERISTICS OF AG/AL 0 . 2 GA 0 .8N AND AGZALO.3GAO.7N
SCHOTTKY CONTACTS: AN XPS STUDY B. BOUDJELIDA, I. GEE, J. EVANS-FREEMAN,
S. A. CLARK, M. AZIZE, J.-M. BETHOUX, AND P. DEMIERRY 1823-1827
INVESTIGATION OF OPTIMIZED OHMIC CONTACT OF DIRECT ITO LAYER WITH
SYNCHROTRON RADIATION ANALYSIS JUN-SEOK HA, JUN-HO JANG, MIN-HO JOO,
TAE-HYEONG KIM, KYU-HO PARK, HYUN-JOON SHIN, JEONG-SOO LEE, AND JONG-JAE
JUNG 1828-1831 TEM ANALYSIS OF ANNIHILATION PROCESS OF THREADING
DISLOCATIONS IN GAN THIN FILMS GROWN BY MOVPE WITH ANTI-SURFACTANT
TREATMENT M. HIJIKURO,N. KUWANO, M. TAKEUCHI, ANDY. AOYAGI 1832-1835 C
2V NITROGEN-HYDROGEN COMPLEXES IN GAASN REVEALED BY X-RAY ABSORPTION
NEAR-EDGE SPECTROSCOPY AND AB INITIO SIMULATIONS G. CIATTO, F.
BOSCHERINI, A. AMORE BONAPASTA, F. FILIPPONE, A. POLIMENI, AND M.
CAPIZZI . . . 1836-1840 OPTICAL PROPERTIES INN: FERMI LEVEL
STABILIZATION BY LOW-ENERGY ION BOMBARDMENT L. F. J. PIPER, T. D. VEAL,
C. F. MCCONVILLE, H. LU, AND W. J. SCHAFF 1841-1845 OBSERVATION OF A
FILLED ELECTRONIC STATE IN THE CONDUCTION BAND OF INN J. J. KIM, H.
MAKINO, K. KOBAYASHI, P. P. CHEN, E. IKENAGA, M. KOBATA, A. TAKEUCHI, M.
AWAJI, T. HANADA, M. W. CHO, AND T. YAO 1846-1849 CONDUCTION AND VALENCE
BAND EDGE PROPERTIES OF HEXAGONAL INN CHARACTERIZED BY OPTICAL
MEASUREMENTS Y. ISHITANI, W. TERASHIMA, S. B. CHE, AND A. YOSHIKAWA
1850-1853 1370 CONTENTS ANISOTROPY OF THE T-POINT EFFECTIVE MASS AND
MOBILITY IN HEXAGONAL INN T. HOFMANN, T. CHAVDAROV, V. DARAKCHIEVA, H.
LU, W. J. SCHAFF, AND M. SCHUBERT 1854-1857 PHOTOLUMINESCENCE
DEPTH-PROFILING OF LATTICE-MISMATCHED INGAN THICK FILM ON GAN USING
INDUCTIVELY COUPLED PLASMA ETCHING JI-MYON LEE, BYUNG-IL KIM, AND
SEONG-JU PARK 1858-1861 DYNAMIC POLARIZATION ROTATION IN PUMP-AND-PROBE
TRANSIENTS OF ANISOTROPICALLY STRAINED M-PLANE GAN FILMS ON LIA10 2 K.
OMAE, T. FLISSIKOWSKI, P. MISRA, O. BRANDT, H. T. GRAHN, K. KOJIMA, AND
Y. KAWAKAMI . . 1862-1865 ENERGY GAPS AND BOWING PARAMETERS OF INALGAN
TERNARY AND QUATERNARY ALLOYS M. ANDROULIDAKI, N. T. PELEKANOS, K.
TSAGARAKI, E. DIMAKIS, E. LLIOPOULOS, A. ADIKIMENAKIS, E.
BELLET-AMALRIC, D. JALABERT, AND A. GEORGAKILAS 1866-1869
PHOTOLUMINESCENCE SPECTRA OF GAN FILMS GROWN AT LOW TEMPERATURE BY
COMPOUND-SOURCE MOLECULAR BEAM EPITAXY TOHRU HONDA, MASARU SAWADA,
TOSHIAKI KOBAYASHI, SHINICHI EGAWA, YOHTA AOKI, MIWAKO AKIYAMA, AND
HIDEO KAWANISHI 1870-1873 INFRARED REFLECTANCE MEASUREMENT FOR INN THIN
FILM CHARACTERIZATION K. FUKUI, Y. KUGUMIYA, N. NAKAGAWA, AND A.
YAMAMOTO 1874-1878 BAND-TO-BAND AND INNER SHELL EXCITATION VIS-UV
PHOTOLUMINESCENCE OF QUATERNARY INALGAN ALLOYS K. FUKUI, S. NAOE, K.
OKADA, S. HAMADA, AND H. HIRAYAMA 1879-1883 HIGH TEMPERATURE REFRACTIVE
INDICES OF GAN C. LIU, S. STEPANOV, A. GOTT, P. A. SHIELDS, E. ZHIRNOV,
W. N. WANG, E. STEIMETZ, AND J. T. ZETTLER 1884-1887 RADIATIVE
RECOMBINATION MECHANISM IN HIGHLY MODULATION DOPED GAN/ALGAN MULTIPLE
QUANTUM WELLS B. ARNAUDOV, P. P. PASKOV, H. HARATIZADEH, P. O. HOLTZ, B.
MONEMAR, S. KAMIYAMA, M. IWAYA, H. AMANO, AND I. AKASAKI 1888-1891 THE
MAGNESIUM ACCEPTOR STATES IN GAN: AN INVESTIGATION BY OPTICALLY-DETECTED
MAGNETIC RESONANCE G. N. ALIEV, S. ZENG, J. J. DAVIES, D. WOLVERSON, S.
J. BINGHAM, P. J. PARBROOK, AND T. WANG 1892-1896 DIRECT CORRELATION
BETWEEN NONRADIATIVE RECOMBINATION CENTERS AND THREADING DISLOCATIONS IN
INGAN QUANTUM WELLS BY NEAR-FIELD PHOTOLUMINESCENCE SPECTROSCOPY AKIO
KANETA, MITSURU FUNATO, YUKIO NARUKAWA, TAKASHI MUKAI, AND YOICHI
KAWAKAMI. 1897-1901 ORIENTATION-DEPENDENT PROPERTIES OF ALUMINUM
NITRIDE SINGLE CRYSTALS M. BICKERMANN, P. HEIMANN, AND B. M. EPELBAUM
1902-1906 PHOTO-INDUCED IMPROVEMENT OF RADIATIVE EFFICIENCY AND
STRUCTURAL CHANGES IN GAASN ALLOYS H. YAGUCHI, T. MORIOKE, T. AOKI, H.
SHIMIZU, Y. HIJIKATA, S. YOSHIDA, M. YOSHITA, H. AKIYAMA, N. USAMI, D.
AOKI, AND K. ONABE 1907-1910 EFFECT OF V/III RATIO ON THE OPTICAL
PROPERTIES OF EU-DOPED GAN J. SAWAHATA, J. W. SEO, M. TAKIGUCHI, D.
SAITO, S. NEMOTO, AND K. AKIMOTO 1911-1914 CATHODOLUMINESCENCE
PROPERTIES OF INGAN CODOPED WITH ZN AND SI Y. HONDA, Y. YANASE, M.
YAMAGUCHI, AND N. SAWAKI 1915-1918 THE ROLE OF VACANCIES IN THE RED
LUMINESCENCE FROM MG-DOPED GAN S. ZENG, G. N. ALIEV, D. WOLVERSON, J. J.
DAVIES, S. J. BINGHAM, D. A. ABDULMALIK, P. G. COLEMAN, T. WANG, AND P.
J. PARBROOK 1919-1922 CARRIER LIFETIME AND DIFFUSION IN GAN EPILAYERS
GROWN BY MEMOCVD* G. TAMULAITIS, J. MICKEVICIUS, M. S. SHUR, R. S.
QHALID FAREED, J. P. ZHANG, ANDR. GASKA 1923-1926 CONTENTS 1371 DEPTH
PROFILING OF ION-IMPLANTED ALINN USING TIME-OF-FLIGHT SECONDARY ION MASS
SPECTROMETRY AND CATHODOLUMINESCENCE R. W. MARTIN, D. RADING, R.
KERSTING, E. TALLAREK, E. NOGALES, D. AMABILE, K. WANG, V. KATCHKANOV,
C. TRAGER-COWAN, K. P. O'DONNELL, I. M. WATSON, V. MATIAS, A. VANTOMME,
K. LORENZ, AND E. ALVES 1927-1930 CLUSTERING IN GAASSBN ALLOYS AS A
POSSIBLE ORIGIN OF THEIR ATYPICAL OPTICAL BEHAVIOR: A SB K-EDGE X-RAY
ABSORPTION STUDY GIANLUCA CIATTO, JEAN-CHRISTOPHE HARMAND, LUDOVIC
LARGEAU, AND FRANK GLAS 1931-1934 DETERMINATION OF CARRIER DIFFUSION
LENGTH IN MOCVD-GROWN GAN EPILAYERS ON SAPPHIRE BY OPTICAL TECHNIQUES E.
V. LUTSENKO, A. L. GURSKII, V. N. PAVLOVSKII, G. P. YABLONSKII, T.
MALINAUSKAS, K. JARASIUENAS, B. SCHINELLER, AND M. HEUKEN 1935-1939
COUPLING OF PHONONS WITH EXCITONS BOUND TO DIFFERENT DONORS AND
ACCEPTORS IN HEXAGONAL GAN K. P. KORONA, A. WYSMOLEK, J. KUEHL, M.
KAMINSKA, J. M. BARANOWSKI, D. C. LOOK, AND S.S.PARK 1940-1943 ENHANCED
EMISSION EFFICIENCY OF INGAN FILMS WITH SI DOPING DA-BING LI, YU-HUAI
LIU, TAKUYA KATSUNO, KEISUKE NAKAO, KAZUYA NAKAMURA, MASAKAZU AOKI,
HIDETO MIYAKE, AND KAZUMASA HIRAMATSU 1944-1948 MEMBRANE STRUCTURES
CONTAINING INGAN/GAN QUANTUM WELLS FABRICATED BY WET ETCHING OF
SACRIFICIAL SILICON SUBSTRATES S.-H. PARK, C. LIU, E. GU, M. D. DAWSON,
I. M. WATSON, K. BEJTKA, P. R. EDWARDS, AND R. W. MARTIN 1949-1952
FABRICATION AND CHARACTERIZATION OF 20 PERIODS INN/INGAN MQWS SONG-BEK
CHE, YOSHIHIRO ISHITANI, AND AKIHIKO YOSHIKAWA 1953-1957 STIMULATED
EMISSION AND CARRIER DYNAMICS IN ALINGAN MULTI-QUANTUM WELLS S. A.
HASHEMIZADEH, J.-P. R. WELLS, J. BROWN, P. MURZYN, B. D. JONES, T. WANG,
P. J. PARBROOK, A. M. FOX, D. J. MOWBRAY, AND M. S. SKOLNICK 1958-1961
BARRIER-TO-WELL CARRIER DYNAMICS OF INGAN/GAN MULTI-QUANTUM-WELLS GROWN
BY PLASMA ASSISTED MBE ON BULK GAN SUBSTRATES K. P. KORONA, C.
SKIERBISZEWSKI, M. SIEKACZ, A. FEDUNIEWICZ, T. SUSKI, G. FRANSSEN, I.
GRZEGORY, J. BORYSIUK, AND M. LESZCZYNSKI 1962-1965 OPTIMIZING THE
INTERNAL QUANTUM EFFICIENCY OF GALNN SQW STRUCTURES FOR GREEN LIGHT
EMITTERS D. FUHRMANN, U. ROSSOW, C. NETZEL, H. BREMERS, G. ADE, P.
HINZE, AND A. HANGLEITER . . . . 1966-1969 HIGH QUANTUM EFFICIENCY
INGAN/GAN STRUCTURES EMITTING AT 540 NM D. M. GRAHAM, P. DAWSON, M. J.
GODFREY, M. J. KAPPERS, P. M. F. J. COSTA, M. E. VICKERS, R. DATTA, C.
J. HUMPHREYS, AND E. J. THRUSH 1970-1973 M. ODIFYING OPTICAL PROPERTIES
OF INGAN QUANTUM WELLS BY A LARGE PIEZOELECTRIC POLARIZATION H. GOTOH,
T. TAWARA, Y. KOBAYASHI, N. KOBAYASHI, Y. YAMAUCHI, T. MAKIMOTO, AND T.
SAITOH 1974-1977 PHOTOCAPACITANCE CHARACTERISTICS OF (IN,GA)N/GAN MQW
STRUCTURES C. RIVERA, J. L. PAU, E. MUNOZ, T. IVE, AND O. BRANDT
1978-1982 PHOTOLUMINESCENCE AND EDGE-INCIDENT WAVELENGTH MODULATION
TRANSMITTANCE SPECTROSCOPY CHARACTERIZATIONS OF INGAN/GAN
MULTIPLE-QUANTUM-WELL STRUCTURES D. Y. LIN, W. L. CHEN, W. C. LIN, J. J.
SHIU, AND J. HAN 1983-1987 ANISOTROPIE AMBIPOLAR DIFFUSION OF CARRIERS
IN INGAN/GAN QUANTUM WELLS Y. J. WANG, S. J. XU, AND Q. LI 1988-1991
1372 CONTENTS OPTICAL SPECTRA OF (1101) INGAN/GAN AND GAN/ALGAN MQW
STRUCTURE GROWN ON A 7 DEGREE OFF AXIS (001) SI SUBSTRATE EUN-HEE KIM,
TOSHIKI HIKOSAKA, TETSUO NARITA, YOSHIO HONDA, AND NOBUHIKO SAWAKI . . .
. 1992-1996 RAMAN SCATTERING FROM IN 0 2 GAO.GN/GAN SUPERLATTICES KENJI
KISODA, KOHJI HIRAKURA, AND HIROSHI HARIMA 1997-2000 RESONANT
PHOTOLUMINESCENCE EXCITATION STUDIES OF INGAN/GAN SINGLE QUANTUM WELLS
D. M. GRAHAM, P. DAWSON, M. J. GODFREY, M. J. KAPPERS, J. S. BARNARD, C.
J. HUMPHREYS, AND E. J. THRUSH 2001-2004 THE EFFECT OF A MG-DOPED GAN
CAP LAYER ON THE OPTICAL PROPERTIES OF INGAN/ALGAN MULTIPLE QUANTUM WELL
STRUCTURES D. M. GRAHAM, P. DAWSON, Y. ZHANG, P. M. F. J. COSTA, M. J.
KAPPERS, C. J. HUMPHREYS, AND E. J. THRUSH 2005-2008 CRITICAL POINTS OF
THE BANDSTRUCTURE OF ALN/GAN SUPERLATTICES INVESTIGATED BY SPECTROSCOPIC
ELLIPSOMETRY AND MODULATION SPECTROSCOPY C. BUCHHEIM, R. GOLDHAHN, A. T.
WINZER, C. COBET, M. RAKEL, N. ESSER, U. ROSSOW, D. FUHRMANN, A.
HANGLEITER, AND O. AMBACHER 2009-2013 CRACK-FREE ALGAN/GAN BRAGG MIRRORS
GROWN ON SI(L 11) SUBSTRATES BY METALORGANIC VAPOR PHASE EPITAXY A. P.
CHIU, N. C. CHEN, P. H. CHANG, AND C. F. SHIH 2014-2018 OPTICAL
CHARACTERIZATION OF GAN MICROCAVITY FABRICATED BY WET ETCHING C.-Y. LU,
S.-L. WANG, H.-M. WU, AND L.-H. PENG 2019-2021 LARGE ENHANCEMENT OF
GAN-UV LIGHT EMISSION USING SILVER MIRROR RESONATOR N. M. AHMED, M. R.
HASHIM, AND Z. HASSAN 2022-2025 EU 3+ LOCATION IN EU DOPED GAN THIN
FILMS AND QUANTUM DOTS THOMAS ANDREEV, NGUYEN QUANG LIEM, YUJI HORI,
MITSUHIRO TANAKA, OSAMU ODA, DANIEL LE SI DANG, AND BRUNO DAUDIN
2026-2029 QUANTUM KINETIC THEORY OF PHONON-ASSISTED CARRIER TRANSITIONS
IN NITRIDE BASED QUANTUM-DOT SYSTEMS J. SEEBECK, T. R. NIELSEN, M.
LORKE, P. GAERTNER, AND F. JAHNKE 2030-2033 TB-DOPED GAN QUANTUM DOTS
GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY YUJI HORI, THOMAS
ANDREEV, DENIS JALABERT, MITSUHIRO TANAKA, OSAMU ODA, DANIEL LE SI DANG,
AND BRUNO DAUDIN 2034-2037 MICROSCOPIC THEORY OF CARRIER-CARRIER
SCATTERING IN NITRIDE BASED QUANTUM-DOT SYSTEMS T. R NIELSEN, J.
SEEBECK, M. LORKE, P. GAERTNER, AND F. JAHNKE 2038-2042 LOCALIZATION OF
NON-EQUILIBRIUM CARRIERS IN DEEP INGAN QUANTUM DOTS AND ITS IMPACT ON
THE DEVICE PERFORMANCE D. S. SIZOV, V. S. SIZOV, V. V. LUNDIN, E. E.
ZAVARIN, A. F. TSATSUL'NIKOV, A. S. VLASOV, YU. G. MUSIKHIN, N. N.
LEDENTSOV, A. M. MINTAIROV, K. SUN, AND J. MERZ 2043-2047
MICROPHOTOLUMINESCENCE OF GAN/ALN QUANTUM DOTS GROWN BY MBE K. S.
ZHURAVLEV, D. D. REE, V. G. MANSUROV, A. YU. NIKITIN, P. P. PASKOV, AND
P.-O. HOLTZ . . 2048-2051 QUANTUM CONFINED STARK EFFECT IN VERTICALLY
CORRELATED GAN/ALN QUANTUM DOTS S. P. LEPKOWSKI AND G. JURCZAK 2052-2055
INFLUENCE OF STACKING ON OPTICAL CHARACTERISTICS OF GAN/ALN
SELF-ORGANIZED QUANTUM DOTS B. J. KWON, J. S. HWANG, H. S. KWACK, Y. H.
CHO, N. GOGNEAU, B. DAUDIN, AND LE SI DANG . . 2056-2059 CARRIER
DYNAMICS IN SITE-CONTROLLED GA! -JNJNF QUANTUM DOTS M. JETTER, V.
PEREZ-SOLOERZANO, A. GROENING, H. GRAEBELDINGER, M. UBL, AND H. SCHWEIZER .
. . . 2060-2064 CONTENTS 1373 SURFACE ENHANCED RAMAN SCATTERING BY GAN
NANOCOLUMNS A. G. MILEKHIN, R. MEIJERS, T. RICHTER, R. CALARCO, H. LUETH,
B. A. PAEZ SIERRA, AND D. R. T. ZAHN 2065 -2068 INGAN BLUE
CATHODOLUMINESCENCE PHOSPHORS SYNTHESIZED WITH LONG REACTION TIME IN A
NEW REACTOR HISASHI KANIE, SHINGO KOBAYASHI, AND YUJI SEMA 2069-2072
STRUCTURAL AND OPTICAL CHARACTERIZATION OF ALJN^GA^^N QUANTUM DOTS V.
PEREZ-SOLOERZANO, A. GROENING, H. SCHWEIZER, AND M. JETTER 2073-2077
OPTICAL PROPERTIES OF INGAN/GAN QUANTUM WELLS ON SAPPHIRE AND BULK GAN
SUBSTRATE M. DWORZAK, T. STEMPEL, A. HOFFMANN, G. FRANSSEN, S. GRZANKA,
T. SUSKI, R. CZERNECKI, M. LESZCZYNSKI, AND I. GRZEGORY 2078-2081
EXCITON DYNAMICS IN NONPOLAR (1120) INGAN/GAN MULTIPLE QUANTUM WELLS
GROWN ON GAN TEMPLATES PREPARED BY LATERAL EPITAXIAL OVERGROWTH T.
ONUMA, A. CHAKRABORTY, B. A. HASKELL, S. KELLER, T. SOTA, U. K. MISHRA,
S. P. DENBAARS, J. S. SPECK, S. NAKAMURA, AND S. F. CHICHIBU 2082-2086
ELECTRICAL AND RECOMBINATION PROPERTIES AND DEEP TRAPS SPECTRA IN MOCVD
ELOG GAN LAYERS IN-HWAN LEE, A. Y. POLYAKOV, N. B. SMIRNOV, A. V.
GOVORKOV, A. V. MARKOV, AND S. J. PEARTON 2087-2090 TWO-DIMENSIONAL
ELECTRON GAS IN CUBIC AL^GAI _ JSJ/GAN HETEROSTRUCTURES S. POTTHAST, J.
SCHOERMANN, J. FERNANDEZ, D. J. AS, K. LISCHKA, H. NAGASAWA, AND M. ABE .
. . 2091-2094 PROLONGED KINETICS OF PHOTOLUMINESCENCE OF TWO-DIMENSIONAL
ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURE T. S. SHAMIRZAEV, N. S.
KORZHAVINA, V. G. MANSUROV, V. V. PREOBRAZHENSKII, AND K. S. ZHURAVLEV
2095-2098 STUDY OF EXCITON HOPPING IN ALGAN EPILAYERS BY
PHOTOLUMINESCENCE SPECTROSCOPY AND MONTE CARLO SIMULATION G. TAMULAITIS,
K. KAZLAUSKAS, A. ZUKAUSKAS, J. MICKEVICIUS, M. S. SHUR, R. S. QHALID
FAREED, J. P. ZHANG, AND R. GASKA 2099-2102 DIFFUSION LENGTHS IN GAN
OBTAINED FROM STEADY STATE PHOTOCARRIER GRATINGS (SSPG) M. NIEHUS AND R.
SCHWARZ 2103-2108 CARRIER DYNAMICS OF OPTICAL EMISSION FROM
TWO-DIMENSIONAL ELECTRON GAS IN UNDOPED ALGAN/GAN SINGLE HETEROJUNCTIONS
H. S. KWACK, Y. H. CHO, G. H. KIM, M. R. PARK, D. H. YOUN, S. B. BAE,
K.-S. LEE, J. H. LEE, ANDJ. H.LEE 2109-2112 OPTICAL CHARACTERISTICS OF
TWO-DIMENSIONAL ELECTRONS IN SINGLE AND MULTIPLE AL X GA! _ X N/GAN
HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION SUN-MO
KIM, HO-SANG KWACK, SUN-WOONG HWANG, YONG-HOON CHO, H. I. CHO, J. H.
LEE, AND KANG L. WANG 2113-2116 BELOW BANDGAP TRANSITIONS IN AN
ALGAN/GAN TRANSISTOR HETEROSTRUCTURE OBSERVED BY PHOTOREFLECTANCE
SPECTROSCOPY R. KUDRAWIEC, M. SYPEREK, J. MISIEWICZ, M. RUDZINSKI, A. P.
GRZEGORCZYK, P. R. HAGEMAN, AND P. K. LARSEN 2117-2120
CATHODOLUMINESCENCE AND ELECTROPHYSICAL CHARACTERIZATION OF AL^GA, _ X N
EPILAYERS V. I. KOZLOVSKY, Y. K. SKASYRSKY, Y. DIKME, H. KAIISCH, R. H.
JANSEN, V. G. LITVINOV, ANDM. HEUKEN 2121-2124 DEFECT DENSITY DEPENDENCE
OF LUMINESCENCE EFFICIENCY AND LIFETIMES IN ALGAN ACTIVE REGIONS
EXHIBITING ENHANCED EMISSION FROM NANOSCALE COMPOSITIONAL
INHOMOGENEITIES G. A. GARRETT, A. V. SAMPATH, C. J. COLLINS, E. D.
READINGER, W. L. SARNEY, H. SHEN, M. WRABACK, V. SOUKHOVEEV, A. USIKOV,
AND V. DMITRIEV 2125-2128 1374 CONTENTS PHOTONIC DEVICES DEGRADATION OF
BLUE LEDS RELATED TO STRUCTURAL DISORDER A. V. KAMANIN, A. G. KOLMAKOV,
P. S. KOP'EV, G. A. ONUSHKIN, A. V. SAKHAROV, N. M. SHMIDT, D. S. SIZOV,
A. A. SITNIKOVA, A. L. ZAKGEIM, R. V. ZOLOTAREVA, AND A. S. USIKOV
2129-2132 HIGH QUALITY TIN ZINC OXIDE/AG OHMIC CONTACTS FOR UV FLIP-CHIP
LIGHT-EMITTING DIODES HYUN-GI HONG, K.-Y. BAN, JUNE-0 SONG, J. CHO, Y.
PARK, J. S. KWAK, IAN T. FERGUSON, AND TAE-YEON SEONG 2133-2136
FABRICATION AND CHARACTERIZATION OF INGAN RESONANT-CAVITY LIGHT-EMITTING
DIODES ON SILICON SUBSTRATES SHIH-YUNG HUANG, RAY-HUA HORNG, WEI-KAI
WANG, AND DON-SING WUU 2137-2140 INGAN-BASED LIGHT-EMITTING DIODES GROWN
ON GROOVED SAPPHIRE SUBSTRATES WEI-KAI WANG, DON-SING WUU, SHU-HEI LIN,
SHIH-YUNG HUANG, AND RAY-HUA HORNG . . . . 2141-2144 TEMPERATURE
CURRENT-VOLTAGE CHARACTERISATION OF MOCVD GROWN INGAN/GAN MQW LEDS
GRIGORE MOLDOVAN, ANDREW PHILLIPS, E. J. THRUSH, AND COLIN J. HUMPHREYS
2145-2148 MICRO-EL STUDYING OF HIGH POWER BLUE LEDS G. A. ONUSHKIN, A.
L. ZAKGEIM, D. A. ZAKGEIM, I. V. ROZHANSKY, A. F. TSATSULNIKOV, W. V.
LUNDIN, AND D. S. SIZOV 2149-2152 NITRIDE-BASED LIGHT EMITTING DIODES
WITH QUATERNARY P-AHNGAN SURFACE LAYERS C. H. KUO, S. J. CHANG, G. C.
CHI, K. T. LAM, AND Y. S. SUN 2153-2155 EVALUATION OF WAVELENGTH SHIFTS
OF GREEN AND BLUE LIGHT EMITTING DIODES WITH INN/GAN MULTIPLE QUANTUM
WELLS JE WON KIM, KYU HAN LEE, AND SANGSU HONG 2156-2159 ANALYSIS OF
DEPENDENCE OF ELECTROLUMINESCENCE EFFICIENCY OF AHNGAN LED
HETEROSTRUCTURES ON PUMPING I. V ROZHANSKY AND D. A. ZAKHEIM 2160-2164
LIGHT EXTRACTION PROCESS IN MOTH-EYE STRUCTURE H. KASUGAI, K. NAGAMATSU,
Y. MIYAKE, A. HONSHIO, T. KAWASHIMA, K. IIDA, M. IWAYA, S. KAMIYAMA, H.
AMANO, I. AKASAKI, H. KINOSHITA, AND H. SHIOMI 2165-2168 IMPROVEMENT OF
LUMINOUS INTENSITY OF INGAN LIGHT EMITTING DIODES GROWN ON HEMISPHERICAL
PATTERNED SAPPHIRE JAE-HOON LEE, JEONG-TAK OH, JIN-SUB PARK, JE-WON KIM,
YONG-CHUN KIM, JEONG-WOOK LEE, AND HYUNG-KOUN CHO 2169-2173 THERMAL
ANALYSIS OF GAN-BASED LASER DIODE PACKAGE W. J. HWANG, T. H. LEE, O. H.
NAM, H. K. KIM, J. S. KWAK, Y. J. PARK, AND M. W. SHIN. . . . 2174-2177
ANALYSIS OF OPTICAL LOSS ON BLUE-VIOLET LASER DIODES J. K. SON, J. S.
HWANG, S. N. LEE, T. SAKONG, H. PAEK, S. CHAE, H. K. KIM, O. NAM, J. Y.
KIM, Y. H. CHO, AND Y. PARK 2178-2181 PHOTOELECTROCHEMICAL SIDEWALL
ETCHING ENHANCES LIGHT OUTPUT POWER IN GAN-BASED LIGHT EMITTING DIODES
C. F. LIN, J. J. DAI, R. H. JIANG, J. H. ZHENG, Z. J. YANG, C. C. YU,
AND W. C. LEE 2182-2186 VARIATION OF THERMAL RESISTANCE WITH INPUT POWER
IN LEDS LIANQIAO YANG, JIANZHENG HU, LAN KIM, AND MOO WHAN SHIN
2187-2190 MOCVD OF INGAN-BASED LIGHT EMITTING STRUCTURES ON SILICON
SUBSTRATES WITH STRAIN OPTIMIZED BUFFER LAYERS USING LONG AI
PRE-DEPOSITION J.-Y. CLAMES, CH. GIESEN, T. MEYER, AND M. HEUKEN
2191-2194 CONTENTS 1375 COMPARATIVE OPTICAL STUDIES ON VIOLET INGAN
QUANTUM WELL LASER DIODE STRUCTURES GROWN ON SAPPHIRE AND GAN SUBSTRATES
J. S. HWANG, J. W. CHOI, A. GOKARNA, Y. H. CHO, J. K. SON, S. N. LEE, T.
SAKONG, H. S. PAEK, O. H. NAM, AND Y. PARK 2195-2198 COMPARISON OF HIGH
QUALITY GAN-BASED LIGHT-EMITTING DIODES GROWN ON ALUMINA-RICH SPINEL AND
SAPPHIRE SUBSTRATES FRANK TINJOD, PHILIPPE DE MIERRY, DAVID LANCEFIELD,
SEBASTIEN CHENOT, ERIC VIREY, JENNIFER L. STONE-SUNDBERG, MILAN R.
KOKTA, AND DAMIEN PAUWELS 2199-2202 CARRIER CAPTURE AND ESCAPE PROCESSES
IN (IN,GA)N SINGLE-QUANTUM-WELL DIODE UNDER FORWARD BIAS CONDITION BY
PHOTOLUMINESCENCE SPECTROSCOPY A. SATAKE, K. SOEJIMA, H. AIZAWA, AND K.
FUJIWARA 2203-2206 LOW RESISTANCE AND HIGHLY REFLECTIVE OHMIC CONTACTS
TOP-TYPE GAN USING TRANSPARENT INTERLAYERS FOR FLIP-CHIP LIGHT EMITTING
DIODES JUNE-O SONG, J. S. KWAK, HYUN-GI HONG, IAN T. FERGUSON, AND
TAE-YEON SEONG 2207-2210 INVESTIGATION OF OPTICAL-OUTPUT-POWER
DEGRADATION IN 365-NM UV-LEDS TAKASHI MUKAI, DAISUKE MORITA, MASASHI
YAMAMOTO, KAZUYUKI AKAISHI, KOUSUKE MATOBA, KATSUHIRO YASUTOMO, YOSHIO
KASAI, MASAHIKO SANO, AND SHIN-ICHI NAGAHAMA 2211-2214 CARRIER
CONFMEMENT EFFECT ENHANCED BY ALGAN/GAN MULTI-QUANTUM BARRIER IN AIINGAN
BASED HIGH POWER BLUE-VIOLET LASER DIODES SUNG-NAM LEE, S. Y. CHO, K. H.
HA, K. K. CHOI, T. JANG, S. H. CHAE, H. K. KIM, H. S. PAEK, Y. J. SUNG,
T. SAKONG, J. K. SON, H. Y. RYU, Y. H. KIM, E. YOON, O. H. NAM, AND Y.
PARK . . 2215-2218 HEXAGONALLY-CLOSED-PACKED MICRO-LIGHT-EMITTING DIODES
H. W. CHOI AND S. J. CHUA 2219-2222 BROADBAND SPECTRALLY DYNAMIC SOLID
STATE ILLUMINATION SOURCE DAVID B. NICOL, ALI ASGHAR, SHALINI GUPTA, HUN
KANG, MING PAN, MARTIN STRASSBURG, CHRIS SUMMERS, AND IAN T. FERGUSON
2223-2226 FIRST INGAN/GAN THIN FILM LED USING SICOI ENGINEERED SUBSTRATE
J. DORSAZ, B. FAURE, J.-F. CARLIN, M. MOSCA, P. GILET, F. LETERTRE, S.
BRESSOT, H. LARHECHE, ANDP. BOVE 2227-2230 MAGNETIC PROPERTIES GROWTH OF
FE DOPED SEMI-INSULATING GAN ON SAPPHIRE AND 4H-SIC BY MOCVD M.
RUDZINSKI, V. DESMARIS, P. A. VAN HAI, J. L. WEYHER, P. R. HAGEMAN, K.
DYNEFORS, T. C. RODLE, H. F. F. JOS, H. ZIRATH, AND P. K. LARSEN
2231-2236 OPTICAL STUDIES OF MOCVD-GROWN GAN-BASED FERROMAGNETIC
SEMICONDUCTOR EPILAYERS AND DEVICES M. H. KANE, M. STRASSBURG, W. E.
FENWICK, A. ASGHAR, J. SENAWIRATNE, D. AZAMAT, Z. HU, E. MALGUTH, S.
GRAHAM, U. PERERA, W. GEHLHOFF, A. HOFFMANN, N. DIETZ, C. J. SUMMERS,
AND I. T. FERGUSON 2237-2240 INVESTIGATION OF OPTICAL PHONONS AND
ELECTRONIC PROPERTIES OF GROUP III-V NITRIDE MULTI QUANTUM WELLS BY
USING FAR INFRARED MAGNETOPLASMON SPECTROSCOPY S. FARJAMI SHAYESTEH, A.
RAHMANI, AND T. J. PARKER 2241-2245 INFLUENCE OF THE MAGNETIC FIELD ON
THE EFFECTIVE MASS OF THE TWO-DIMENSIONAL ELECTRON GAS IN ALGAJ _ X
N/GAN HETEROSTRUCTURES N. TANG, B. SHEN, M. J. WANG, Z. J. YANG, K. XU,
G. Y. ZHANG, Y. S. GUI, B. ZHU, S. L. GUO, J. H. CHU, K HOSHINO, AND Y.
ARAKAWA 2246-2249 1376 CONTENTS MAGNETIC, OPTICAL AND ELECTRICAL
PROPERTIES OF GAN AND A1N DOPED WITH RARE-EARTH ELEMENT GD S. W. CHOI,
Y. K. ZHOU, S. EMURA, X. J. LEE, N. TERAGUCHI, A. SUZUKI, AND H. ASAHI
2250-2253 ELECTRONIC DEVICES PERFORMANCE OF ALGAN/GAN HETEROJUNCTION
FETS FOR MICROWAVE POWER APPLICATIONS (INVITED) H. MIYAMOTO 2254-2260 AN
ALGAN/GAN TWO-COLOR PHOTODETECTOR BASED ON AN ALGAN/GAN/SIC HEMT LAYER
STRUCTURE M. MARSO, A. FOX, G. HEIDELBERGER, J. BERNAET, AND H. LUETH
2261-2264 CAPACITANCE CHARACTERIZATION OF ALN/GAN DOUBLE-BARRIER
RESONANT TUNNELLING DIODES A. M. KURAKIN, S. A. VITUSEVICH, S. V.
DANYLYUK, A. V. NAUMOV, C. T. FOXON, S. V. NOVIKOV, N. KLEIN, H. LUETH,
AND A. E. BELYAEV 2265-2269 HYDROGEN GENERATION FROM AQUEOUS WATER USING
N-GAN BY PHOTOASSISTED ELECTROLYSIS KATSUSHI FUJII AND KAZUHIRO OHKAWA
2270-2273 PIEZOELECTRIC PROPERTIES OF THIN A1N LAYERS FOR MEMS
APPLICATION DETERMINED BY PIEZORESPONSE FORCE MICROSCOPY K. TONISCH, V.
CIMALLA, CH. FOERSTER, D. DONTSOV, AND O. AMBACHER 2274-2277 NARROW-BAND
400 NM MSM PHOTODETECTORS USING A THIN INGAN LAYER ON A GAN/SAPPHIRE
STRUCTURE J. OHSAWA, T. KOZAWA, O. FUJISHIMA, ANDH. ITOH 2278-2282
GAN-BASED SCHOTTKY DIODES FOR HYDROGEN SENSING IN TRANSFORMER OIL PETER
SANDVIK, ELENA BABES-DORNEA, ANIK ROY TRUDEL, MARIUS GEORGESCU, VINAYAK
TILAK, AND DANIEL RENAUD 2283-2286 ALGAN METAL-SEMICONDUCTOR-METAL
STRUCTURE FOR PRESSURE SENSING APPLICATIONS Z. HASSAN, Y. C. LEE, S. S.
NG, F. K. YAM, Y. LIU, Z. RANG, M. Z. KAUSER, P. P. RUEDEN, AND M. I.
NATHAN 2287-2290 SUPPRESSION OF GATE LEAKAGE CURRENT IN GAN MOS DEVICES
BY PASSIVATION WITH PHOTO-GROWN GA 2 0 3 H.-M. WU AND L.-H. PENG
2291-2294 FABRICATION AND CHARACTERIZATION OF INDIUM-TIN-OXIDE/GAN
VISIBLE-BLIND UV DETECTORS H. F. LUI,W. K FONG,C. SURYA, C. H. CHEUNG,
AND A. B. DJURISIC 2295-2298 FABRICATION AND CHARACTERIZATION OF
NI-BASED SCHOTTKY-TYPE AL X GAI _JN ULTRAVIOLET PHOTODETECTORS WITH
DIFFERENT BUFFER CONDITIONS KI YON PARK, BONG JOON KWON, JEONG HWAN SON,
AND YONG-HOON CHO 2299-2302 SCREENING OF POLARIZATION INDUCED ELECTRIC
FIELDS IN BLUE/VIOLET INGAN/GAN LASER DIODES BY SI DOPING IN QUANTUM
BARRIERS REVEALED BY HYDROSTATIC PRESSURE G. FRANSSEN, T. SUSKI, P.
PERLIN, R. BOHDAN, A. BERCHA, W. TRZECIAKOWSKI, I. MAKAROWA, R.
CZERNECKI, M. LESZCZYHSKI, AND I. GRZEGORY 2303-2306 PIEZORESISTIVE AND
PIEZOELECTRIC EFFECTS IN GAN V. TILAK, A. VERTIATCHIKH, J. JIANG, N.
REEVES, AND S. DASGUPTA 2307-2311 ALGAN/GAN/INGAN/GAN HEMTS WITH AN
INGAN-NOTCH J. LIU, Y. G. ZHOU, J. ZHU, K M. LAU, AND K. J. CHEN
2312-2316 HIGH TEMPERATURE CHARACTERISTICS OF DOPED CHANNEL ALGAN/GAN
MIS-HFETS WITH THIN ALGAN BARRIER LAYER C. X. WANG, N. MAEDA, M. HIROKI,
Y. YOKOYAMA, T. MAKIMOTO, T. KOBAYASHI, AND T. ENOKI 2317-2320 INFLUENCE
OF MACRO DEFECTS IN SIC SUBSTRATE ON ALGAN/GAN HEMT DC CHARACTERISTICS
H. SAZAWA, T. MITANI, H. BANG, K. HIRATA, M. KOSAKI, K. FURUTA, T.
TSUCHIYA, K. HIKOSAKA, S. NAKASHIMA, AND H. OKUMURA 2321-2324 CONTENTS
1377 QUALITY AND UNIFORMITY ASSESSMENT OF ALGAN/GAN QUANTUM WELLS AND
HEMT HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY WITH AMMONIA
SOURCE Y. CORDIER, F. PRUVOST, F. SEMOND, J. MASSIES, M. LEROUX, P.
LORENZINI, AND C. CHAIX 2325-2328 LOW-FREQUENCY NOISE IN ALGAN/GAN HEMT
STRUCTURES WITH A1N THIN FILM LAYER S. A. VITUSEVICH, O. A. ANTONIUK, M.
V. PETRYCHUK, S. V. DANYLYUK, A. M. KURAKIN, A. E. BELYAEV, AND N. KLEIN
2329-2332 SCHOTTKY GATE EFFECTS ON TRANSPORT PROPERTIES
OFALO.35GAO.65N/GAN HETEROSTRUCTURES A. ASGARI, M. KALAFI, AND L.
FARAONE 2333-2337 HIGH AND LOW ENERGY PROTON IRRADIATION EFFECTS ON
ALGAN/GAN HFETS G. SONIA, E. RICHTER, R. LOSSY, M. MAI, J. SCHMIDT, M.
WEYERS, G. TRAENKLE, A. DENKER, J. OPITZ-COUTUREAU, G. PENSL, I. BRAUER,
AND H. P. STRUNK 2338-2341 ADVANCED BUFFERS FOR ALGAN/GAN HEMT AND
INGAN/GAN MQW ON SILICON SUBSTRATES Y. DIKME, M. FIEGER, M. EICKELKAMP,
C. GIESEN, E. V. LUTSENKO, G P. YABLONSKII, A. SZYMAKOWSKI, F. O.
JESSEN, A. VESCAN, H. KAIISCH, M. HEUKEN, AND R. H. JANSEN 2342-2345
ANALYSIS OF BUFFER-TRAPPING EFFECTS ON CURRENT COLLAPSE OF GAN FETS K.
HORIO, H. TAKAYANAGI, AND H. NAKANO 2346-2349 AN ANALYTICAL MODEL FOR
GAN MESFET'S USING NEW VELOCITY-FIELD DEPENDENCE SNEHAKABRA, HARSUPREET
KAUR, SUBHASIS HALDAR, MRIDULA GUPTA, ANDR. S. GUPTA 2350-2355 A SURFACE
TRAP MODEL AND ITS APPLICATION TO ANALYSIS OF III-NITRIDE HEMT
PERFORMANCE KIRILL A. BULASHEVICH AND SERGEY YU. KARPOV 2356-2359 EFFECT
OF EPITAXIAL LAYER CRYSTAL QUALITY ON DC AND RF CHARACTERISTICS OF
ALGAN/GAN SHORT-GATE HEMTS K. SHIOJIMA, T. MAKIMURA, T. MARUYAMA, T.
SUEMITSU, N. SHIGEKAWA, M. HIROKI, AND H. YOKOYAMA 2360-2363 ION
IMPLANTATION DOPING FOR ALGAN/GAN HEMTS MUNEYOSHI SUITA, TAKUMANANJO,
TOSHIYUKI OISHI, YUJI ABE, AND YASUNORI TOKUDA 2364-2367
ENHANCEMENT-MODE ALGAN/GAN HEMTS ON SILICON SUBSTRATE SHUO JIA, YONG
CAI, DELIANG WANG, BAOSHUN ZHANG, KEI MAY LAU, AND KEVIN J. CHEN . . . .
2368-2372 ALGAN/GAN HIGH-ELECTRON-MOBILITY TRANSISTORS ON SAPPHIRE WITH
FE-DOPED GAN BUFFER LAYER BY MOVPE T. AGGERSTAM, M. SJOEDIN, AND S.
LOURDUDOSS 2373-2376 FURTHER PAPERS OF CONFERENCE ICNS-6 ARE PUBLISHED
IN PHYSICA STATUS SOLIDI (A) 203, NR. 7 (2006) AND PHYSICA STATUS SOLIDI
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| title | Papers presented at 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August - 2 September 2005 |
| title_auth | Papers presented at 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August - 2 September 2005 |
| title_exact_search | Papers presented at 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August - 2 September 2005 |
| title_exact_search_txtP | Papers presented at 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August - 2 September 2005 |
| title_full | Papers presented at 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August - 2 September 2005 guest ed.: Stefan Hildebrandt ... |
| title_fullStr | Papers presented at 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August - 2 September 2005 guest ed.: Stefan Hildebrandt ... |
| title_full_unstemmed | Papers presented at 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August - 2 September 2005 guest ed.: Stefan Hildebrandt ... |
| title_short | Papers presented at 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany, 28 August - 2 September 2005 |
| title_sort | papers presented at 6th international conference on nitride semiconductors icns 6 bremen germany 28 august 2 september 2005 |
| topic | Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Nitride (DE-588)4171929-3 gnd |
| topic_facet | Drei-Fünf-Halbleiter Nitride Konferenzschrift 2005 Bremen Statistik |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015415876&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT internationalconferenceonnitridesemiconductorsbremen paperspresentedat6thinternationalconferenceonnitridesemiconductorsicns6bremengermany28august2september2005 AT hildebrandtstefan paperspresentedat6thinternationalconferenceonnitridesemiconductorsicns6bremengermany28august2september2005 |