Physics of semiconductor devices:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Hoboken, NJ
Wiley-Interscience
2007
|
| Ausgabe: | 3. ed. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | X, 815 S. Ill., graph. Darst. 25 cm |
| ISBN: | 0471143235 9780471143239 |
Internformat
MARC
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| 245 | 1 | 0 | |a Physics of semiconductor devices |c S. M. Sze and Kwok K. Ng |
| 250 | |a 3. ed. | ||
| 264 | 1 | |a Hoboken, NJ |b Wiley-Interscience |c 2007 | |
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Datensatz im Suchindex
| _version_ | 1804136169454174208 |
|---|---|
| adam_text | Contents
Introduction 1
Part I Semiconductor Physics
Chapter 1 Physics and Properties of Semiconductors—A Review 7
1.1 Introduction, 7
1.2 Crystal Structure, 8
1.3 Energy Bands and Energy Gap, 12
1.4 Carrier Concentration at Thermal Equilibrium, 16
1.5 Carrier Transport Phenomena, 28
1.6 Phonon, Optical, and Thermal Properties, 50
1.7 Heterojunctions and Nanostructures, 56
1.8 Basic Equations and Examples, 62
Part II Device Building Blocks
Chapter 2 p n Junctions 79
2.1 Introduction, 79
2.2 Depletion Region, 80
2.3 Current Voltage Characteristics, 90
2.4 Junction Breakdown, 102
2.5 Transient Behavior and Noise, 114
2.6 Terminal Functions, 118
2.7 Heterojunctions, 124
Chapter 3 Metal Semiconductor Contacts 134
3.1 Introduction, 134
3.2 Formation of Barrier, 135
3.3 Current Transport Processes, 153
3.4 Measurement of Barrier Height, 170
3.5 Device Structures, 181
3.6 Ohmic Contact, 187
vii
viii CONTENTS
Chapter 4 Metal Insulator Semiconductor Capacitors 197
4.1 Introduction, 197
4.2 Ideal MIS Capacitor, 198
4.3 Silicon MOS Capacitor, 213
Part HI Transistors
Chapter 5 Bipolar Transistors 243
5.1 Introduction, 243
5.2 Static Characteristics, 244
5.3 Microwave Characteristics, 262
5.4 Related Device Structures, 275
5.5 Heterojunction Bipolar Transistor, 282
Chapter 6 MOSFETs 293
6.1 Introduction, 293
6.2 Basic Device Characteristics, 297
6.3 Nonuniform Doping and Buried Channel Device, 320
6.4 Device Scaling and Short Channel Effects, 328
6.5 MOSFET Structures, 339
6.6 Circuit Applications, 347
6.7 Nonvolatile Memory Devices, 350
6.8 Single Electron Transistor, 360
Chapter 7 JFETs, MESFETs, and MODFETs 374
7.1 Introduction, 374
7.2 JFET and MESFET, 375
7.3 MODFET, 401
Part IV Negative Resistance and Power Devices
Chapter 8 Tunnel Devices 417
8.1 Introduction, 417
8.2 Tunnel Diode, 418
8.3 Related Tunnel Devices, 435
8.4 Resonant Tunneling Diode, 454
Chapter 9 IMPATT Diodes 466
9.1 Introduction, 466
CONTENTS ix
9.2 Static Characteristics, 467
9.3 Dynamic Characteristics, 474
9.4 Power and Efficiency, 482
9.5 Noise Behavior, 489
9.6 Device Design and Performance, 493
9.7 BARITT Diode, 497
9.8 TUNNETT Diode, 504
Chapter 10 Transferred Electron and Real Space Transfer Devices 510
10.1 Introduction, 510
10.2 Transferred Electron Device, 511
10.3 Real Space Transfer Devices, 536
Chapter 11 Thyristors and Power Devices 548
11.1 Introduction, 548
11.2 Thyristor Characteristics, 549
11.3 Thyristor Variations, 574
11.4 Other Power Devices, 582
Part V Photonic Devices and Sensors
Chapter 12 LEDs and Lasers 601
12.1 Introduction, 601
12.2 Radiative Transitions, 603
12.3 Light Emitting Diode (LED), 608
12.4 Laser Physics, 621
12.5 Laser Operating Characteristics, 630
12.6 Specialty Lasers, 651
Chapter 13 Photodetectors and Solar Cells 663
13.1 Introduction, 663
13.2 Photoconductor, 667
13.3 Photodiodes, 671
13.4 Avalanche Photodiode, 683
13.5 Phototransistor, 694
13.6 Charge Coupled Device (CCD), 697
13.7 Metal Semiconductor Metal Photodetector, 712
13.8 Quantum Well Infrared Photodetector, 716
13.9 Solar Cell, 719
x CONTENTS
Chapter 14 Sensors 743
14.1 Introduction, 743
14.2 Thermal Sensors, 744
14.3 Mechanical Sensors, 750
14.4 Magnetic Sensors, 758
14.5 Chemical Sensors, 765
Appendixes 773
A. List of Symbols, 775
B. International System of Units, 785
C. Unit Prefixes, 786
D. Greek Alphabet, 787
E. Physical Constants, 788
F. Properties of Important Semiconductors, 789
G. Properties of Si and GaAs, 790
H. Properties of SiO2 and Si3N4, 791
Index 793
|
| adam_txt |
Contents
Introduction 1
Part I Semiconductor Physics
Chapter 1 Physics and Properties of Semiconductors—A Review 7
1.1 Introduction, 7
1.2 Crystal Structure, 8
1.3 Energy Bands and Energy Gap, 12
1.4 Carrier Concentration at Thermal Equilibrium, 16
1.5 Carrier Transport Phenomena, 28
1.6 Phonon, Optical, and Thermal Properties, 50
1.7 Heterojunctions and Nanostructures, 56
1.8 Basic Equations and Examples, 62
Part II Device Building Blocks
Chapter 2 p n Junctions 79
2.1 Introduction, 79
2.2 Depletion Region, 80
2.3 Current Voltage Characteristics, 90
2.4 Junction Breakdown, 102
2.5 Transient Behavior and Noise, 114
2.6 Terminal Functions, 118
2.7 Heterojunctions, 124
Chapter 3 Metal Semiconductor Contacts 134
3.1 Introduction, 134
3.2 Formation of Barrier, 135
3.3 Current Transport Processes, 153
3.4 Measurement of Barrier Height, 170
3.5 Device Structures, 181
3.6 Ohmic Contact, 187
vii
viii CONTENTS
Chapter 4 Metal Insulator Semiconductor Capacitors 197
4.1 Introduction, 197
4.2 Ideal MIS Capacitor, 198
4.3 Silicon MOS Capacitor, 213
Part HI Transistors
Chapter 5 Bipolar Transistors 243
5.1 Introduction, 243
5.2 Static Characteristics, 244
5.3 Microwave Characteristics, 262
5.4 Related Device Structures, 275
5.5 Heterojunction Bipolar Transistor, 282
Chapter 6 MOSFETs 293
6.1 Introduction, 293
6.2 Basic Device Characteristics, 297
6.3 Nonuniform Doping and Buried Channel Device, 320
6.4 Device Scaling and Short Channel Effects, 328
6.5 MOSFET Structures, 339
6.6 Circuit Applications, 347
6.7 Nonvolatile Memory Devices, 350
6.8 Single Electron Transistor, 360
Chapter 7 JFETs, MESFETs, and MODFETs 374
7.1 Introduction, 374
7.2 JFET and MESFET, 375
7.3 MODFET, 401
Part IV Negative Resistance and Power Devices
Chapter 8 Tunnel Devices 417
8.1 Introduction, 417
8.2 Tunnel Diode, 418
8.3 Related Tunnel Devices, 435
8.4 Resonant Tunneling Diode, 454
Chapter 9 IMPATT Diodes 466
9.1 Introduction, 466
CONTENTS ix
9.2 Static Characteristics, 467
9.3 Dynamic Characteristics, 474
9.4 Power and Efficiency, 482
9.5 Noise Behavior, 489
9.6 Device Design and Performance, 493
9.7 BARITT Diode, 497
9.8 TUNNETT Diode, 504
Chapter 10 Transferred Electron and Real Space Transfer Devices 510
10.1 Introduction, 510
10.2 Transferred Electron Device, 511
10.3 Real Space Transfer Devices, 536
Chapter 11 Thyristors and Power Devices 548
11.1 Introduction, 548
11.2 Thyristor Characteristics, 549
11.3 Thyristor Variations, 574
11.4 Other Power Devices, 582
Part V Photonic Devices and Sensors
Chapter 12 LEDs and Lasers 601
12.1 Introduction, 601
12.2 Radiative Transitions, 603
12.3 Light Emitting Diode (LED), 608
12.4 Laser Physics, 621
12.5 Laser Operating Characteristics, 630
12.6 Specialty Lasers, 651
Chapter 13 Photodetectors and Solar Cells 663
13.1 Introduction, 663
13.2 Photoconductor, 667
13.3 Photodiodes, 671
13.4 Avalanche Photodiode, 683
13.5 Phototransistor, 694
13.6 Charge Coupled Device (CCD), 697
13.7 Metal Semiconductor Metal Photodetector, 712
13.8 Quantum Well Infrared Photodetector, 716
13.9 Solar Cell, 719
x CONTENTS
Chapter 14 Sensors 743
14.1 Introduction, 743
14.2 Thermal Sensors, 744
14.3 Mechanical Sensors, 750
14.4 Magnetic Sensors, 758
14.5 Chemical Sensors, 765
Appendixes 773
A. List of Symbols, 775
B. International System of Units, 785
C. Unit Prefixes, 786
D. Greek Alphabet, 787
E. Physical Constants, 788
F. Properties of Important Semiconductors, 789
G. Properties of Si and GaAs, 790
H. Properties of SiO2 and Si3N4, 791
Index 793 |
| any_adam_object | 1 |
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| author | Sze, S. M. 1936-2023 Ng, Kwok Kwok 1952- |
| author_GND | (DE-588)133681998 (DE-588)133688852 |
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| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 3. ed. |
| format | Book |
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| illustrated | Illustrated |
| index_date | 2024-07-02T16:22:35Z |
| indexdate | 2024-07-09T20:52:08Z |
| institution | BVB |
| isbn | 0471143235 9780471143239 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015406605 |
| oclc_num | 255534639 |
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| physical | X, 815 S. Ill., graph. Darst. 25 cm |
| publishDate | 2007 |
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| spelling | Sze, S. M. 1936-2023 Verfasser (DE-588)133681998 aut Physics of semiconductor devices S. M. Sze and Kwok K. Ng 3. ed. Hoboken, NJ Wiley-Interscience 2007 X, 815 S. Ill., graph. Darst. 25 cm txt rdacontent n rdamedia nc rdacarrier Halbleiterbauelement Halbleiterphysik - Halbleiterschaltung Semiconductors Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleiterschaltung (DE-588)4158811-3 gnd rswk-swf Halbleiterschaltung (DE-588)4158811-3 s Halbleiterbauelement (DE-588)4113826-0 s Halbleiterphysik (DE-588)4113829-6 s DE-604 Physikalische Eigenschaft (DE-588)4134738-9 s Ng, Kwok Kwok 1952- Verfasser (DE-588)133688852 aut HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015406605&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Sze, S. M. 1936-2023 Ng, Kwok Kwok 1952- Physics of semiconductor devices Halbleiterbauelement Halbleiterphysik - Halbleiterschaltung Semiconductors Physikalische Eigenschaft (DE-588)4134738-9 gnd Halbleiterphysik (DE-588)4113829-6 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterschaltung (DE-588)4158811-3 gnd |
| subject_GND | (DE-588)4134738-9 (DE-588)4113829-6 (DE-588)4113826-0 (DE-588)4158811-3 |
| title | Physics of semiconductor devices |
| title_auth | Physics of semiconductor devices |
| title_exact_search | Physics of semiconductor devices |
| title_exact_search_txtP | Physics of semiconductor devices |
| title_full | Physics of semiconductor devices S. M. Sze and Kwok K. Ng |
| title_fullStr | Physics of semiconductor devices S. M. Sze and Kwok K. Ng |
| title_full_unstemmed | Physics of semiconductor devices S. M. Sze and Kwok K. Ng |
| title_short | Physics of semiconductor devices |
| title_sort | physics of semiconductor devices |
| topic | Halbleiterbauelement Halbleiterphysik - Halbleiterschaltung Semiconductors Physikalische Eigenschaft (DE-588)4134738-9 gnd Halbleiterphysik (DE-588)4113829-6 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterschaltung (DE-588)4158811-3 gnd |
| topic_facet | Halbleiterbauelement Halbleiterphysik - Halbleiterschaltung Semiconductors Physikalische Eigenschaft Halbleiterphysik Halbleiterschaltung |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015406605&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT szesm physicsofsemiconductordevices AT ngkwokkwok physicsofsemiconductordevices |