Advanced III-V semiconductor materials technology assessment:
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English |
Veröffentlicht: |
Park Ridge, NJ
Noyes Publ.
1984
|
Schriftenreihe: | Chemical technology review
225 |
Schlagworte: | |
Beschreibung: | 220 S. graph.Darst. |
ISBN: | 081550974X |
Internformat
MARC
LEADER | 00000nam a2200000zcb4500 | ||
---|---|---|---|
001 | BV022139459 | ||
003 | DE-604 | ||
005 | 20040301000000.0 | ||
007 | t | ||
008 | 930226s1984 d||| |||| 00||| eng d | ||
020 | |a 081550974X |9 0-8155-0974-X | ||
035 | |a (OCoLC)10100870 | ||
035 | |a (DE-599)BVBBV022139459 | ||
040 | |a DE-604 |b ger | ||
041 | 0 | |a eng | |
049 | |a DE-706 |a DE-83 | ||
050 | 0 | |a TK7876 | |
082 | 0 | |a 621.381/33 |2 19 | |
245 | 1 | 0 | |a Advanced III-V semiconductor materials technology assessment |c ed. by M. Nowogrodzki |
246 | 1 | 3 | |a Advanced three-five semiconductor materials technology assessment |
264 | 1 | |a Park Ridge, NJ |b Noyes Publ. |c 1984 | |
300 | |a 220 S. |b graph.Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Chemical technology review |v 225 | |
650 | 4 | |a Gallium arsenide semiconductors | |
650 | 4 | |a Microwave devices | |
650 | 4 | |a Microwave transistors | |
650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
689 | 1 | |8 1\p |5 DE-604 | |
700 | 1 | |a Nowogrodzki, M. |e Sonstige |4 oth | |
830 | 0 | |a Chemical technology review |v 225 |w (DE-604)BV000012423 | |
940 | 1 | |q TUB-nseb | |
999 | |a oai:aleph.bib-bvb.de:BVB01-015354083 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804136112575217664 |
---|---|
adam_txt | |
any_adam_object | |
any_adam_object_boolean | |
building | Verbundindex |
bvnumber | BV022139459 |
callnumber-first | T - Technology |
callnumber-label | TK7876 |
callnumber-raw | TK7876 |
callnumber-search | TK7876 |
callnumber-sort | TK 47876 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
ctrlnum | (OCoLC)10100870 (DE-599)BVBBV022139459 |
dewey-full | 621.381/33 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.381/33 |
dewey-search | 621.381/33 |
dewey-sort | 3621.381 233 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01535nam a2200445zcb4500</leader><controlfield tag="001">BV022139459</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20040301000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">930226s1984 d||| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">081550974X</subfield><subfield code="9">0-8155-0974-X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)10100870</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV022139459</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-706</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7876</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381/33</subfield><subfield code="2">19</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Advanced III-V semiconductor materials technology assessment</subfield><subfield code="c">ed. by M. Nowogrodzki</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Advanced three-five semiconductor materials technology assessment</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Park Ridge, NJ</subfield><subfield code="b">Noyes Publ.</subfield><subfield code="c">1984</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">220 S.</subfield><subfield code="b">graph.Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Chemical technology review</subfield><subfield code="v">225</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium arsenide semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microwave devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Microwave transistors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nowogrodzki, M.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Chemical technology review</subfield><subfield code="v">225</subfield><subfield code="w">(DE-604)BV000012423</subfield><subfield code="9"></subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">TUB-nseb</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-015354083</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
id | DE-604.BV022139459 |
illustrated | Illustrated |
index_date | 2024-07-02T16:17:32Z |
indexdate | 2024-07-09T20:51:13Z |
institution | BVB |
isbn | 081550974X |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015354083 |
oclc_num | 10100870 |
open_access_boolean | |
owner | DE-706 DE-83 |
owner_facet | DE-706 DE-83 |
physical | 220 S. graph.Darst. |
psigel | TUB-nseb |
publishDate | 1984 |
publishDateSearch | 1984 |
publishDateSort | 1984 |
publisher | Noyes Publ. |
record_format | marc |
series | Chemical technology review |
series2 | Chemical technology review |
spelling | Advanced III-V semiconductor materials technology assessment ed. by M. Nowogrodzki Advanced three-five semiconductor materials technology assessment Park Ridge, NJ Noyes Publ. 1984 220 S. graph.Darst. txt rdacontent n rdamedia nc rdacarrier Chemical technology review 225 Gallium arsenide semiconductors Microwave devices Microwave transistors Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 s DE-604 Drei-Fünf-Halbleiter (DE-588)4150649-2 s 1\p DE-604 Nowogrodzki, M. Sonstige oth Chemical technology review 225 (DE-604)BV000012423 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Advanced III-V semiconductor materials technology assessment Chemical technology review Gallium arsenide semiconductors Microwave devices Microwave transistors Halbleitertechnologie (DE-588)4158814-9 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
subject_GND | (DE-588)4158814-9 (DE-588)4150649-2 |
title | Advanced III-V semiconductor materials technology assessment |
title_alt | Advanced three-five semiconductor materials technology assessment |
title_auth | Advanced III-V semiconductor materials technology assessment |
title_exact_search | Advanced III-V semiconductor materials technology assessment |
title_exact_search_txtP | Advanced III-V semiconductor materials technology assessment |
title_full | Advanced III-V semiconductor materials technology assessment ed. by M. Nowogrodzki |
title_fullStr | Advanced III-V semiconductor materials technology assessment ed. by M. Nowogrodzki |
title_full_unstemmed | Advanced III-V semiconductor materials technology assessment ed. by M. Nowogrodzki |
title_short | Advanced III-V semiconductor materials technology assessment |
title_sort | advanced iii v semiconductor materials technology assessment |
topic | Gallium arsenide semiconductors Microwave devices Microwave transistors Halbleitertechnologie (DE-588)4158814-9 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
topic_facet | Gallium arsenide semiconductors Microwave devices Microwave transistors Halbleitertechnologie Drei-Fünf-Halbleiter |
volume_link | (DE-604)BV000012423 |
work_keys_str_mv | AT nowogrodzkim advancediiivsemiconductormaterialstechnologyassessment AT nowogrodzkim advancedthreefivesemiconductormaterialstechnologyassessment |