Proceedings of the Symposium on Laser Processes for Microelectronic Applications:
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Pennington, NJ
Electrochem. Soc.
1988
|
| Schriftenreihe: | Proceedings / Electrochemical Society
88,10 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | VII, 251 S. graph. Darst. |
Internformat
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Datensatz im Suchindex
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| adam_text | PROCEEDINGS OF THE SYMPOSIUM ON LASER PROCESSES FOR MICROELECTRONIC
APPLICATIONS EDITED BY J. J. RITSKO D. J. EHRLICH IBM T. J. WATSON
RESEARCH CENTER MASSACHUSETTS INSTITUTE OF TECHNOLOGY YORKTOWN HEIGHTS,
NEW YORK LINCOLN LABORATORY LEXINGTON, MASSACHUSETTS M. KASHIWAGI
SEMICONDUCTOR ENGINEERING LABORATORY TOSHIBA RESEARCH AND DEVELOPMENT
CENTER 1 KOMUKAI TOSHIBA-MACHI SAIWAKU, KAWASAKI KANAGAWA 210, JAPAN
DIELECTRICSAND INSULATIONAND ELECTRONICS DIVISIONS PROCEEDINGS VOLUME
88-10 THE ELECTROCHEMICAL SOCIETY, INC., 10 SOUTH MAIN ST., PENNINGTON,
NJ08534-26 TABLE OF CONTENTS PREFACE DEVICE
FABRICATION,LITHOGRAPHY,DOPING LASER-DIRECT-WRITING TECHNIQUES
FORTUNINGAND 1 MODIFICATIONOFINTERCONNECTIONSON INTEGRATED AND
MULTIPLE-CHIPCIRCUITS - J. G. BLACK, C.-L. CHEN, M. ROTHSCHILD, S. P.
DORAN, L. J.MAHONEY, AND D. J. EHRLICH ADVANCED
KRFEXCMERLASERLITHOGRAPHYFOR 8 HALF-MICRONDEVICES - K. OGAWA,M.
SASAGO,M. ENDO, H. NAKAGAWA, Y. TANI AND T. ISHIHARA LOWTEMPERATURE SI
EPITAXY BYPHOTOCHEMICALVA- 21 PORDEPOSITION -M. KONAGAI,A. YAMADA, A.
SATOH, AND K. TAKAHASHI DIRECT WRITING OFGAASMONOLAYERS BYLASERASSISTED
29 ATOMICLAYEREPITAXY -N.H.KARAM,H. LIU, I. YOSHIDA AND S. M. BEDAIR
LASER DOPINGOFSEMICONDUCTORS - T. W. SIGNION 34
CHARACTERIZATIONOFDIODESFABRICATED USING THE 44 GAS IMMERSION
LASERDOPING (GILD) PROCESS IN SILICON -P. G. CAREY, AND T. W. SIGNION
MEASUREMENTS OFMELTDEPTHLIMITEDDIFFUSIONIN 53 GAS
IMMERSIONLASER-DOPEDSILICON USING AN IM PROVEDLASER SYSTEM - K. H.
WEINER, B.M. MCWILLIAMS, AND T. W. SIGNION MECHANISMOF ARFEXCMER
LASERDOPING USINGBF3 - S. 62 KATO, T. NAGAHORI, AND S. MALSUMOTO
LASERETCHING OF METALS, POLYMERS ANDSEMICONDUCTORS LASERMASS
SPECTROSCOPYOF LASERETCHINGANDCVD 70 PROCESSES - M. STUKE,Y. ZHANG
LASER-INDUCED VAPORIZATION TIME-RESOLVED MASS 82 SPECTROMETRY OF
REFRACTORIES - D. W. BONNELL, P. K. SCHENCK, AND J. W. HASTIE
EDGEPROFILECONTROL INLASERABLATION OF 95 POLYMERS: PROXIMITYETCHING - J.
T. C. YEH AND J. J. DONELON DRYLASERASSISTED ETCHINGOF PHOTORESISTS -G.
KOREN 104 ANDM. ANSCHEL LASER ASSISTED ETCHINGOFCHROMIUMAND COPPER - J.
113 R. LANKARD, F. C. BURNS, AND J. J. KAUFMAN
PHOTOCHEMICALLYINDUCEDETCHINGOF COPPER -C.R. 123 MOYLAN AND T. J. CHUANG
MECHANISTIC ASPECTS OF ARF LASERETCHING OF SIAND 130 MO WITHFATOM
PRECURSORS COF2AND NF3 - G. L.LOPER, S. H. SUCK SALK, ANDM. D. TABAT
EFFECTOFBANDGAP CHARACTERISTICS ON 143 LASER-INDUCEDDRYETCHINGOF
SEMICONDUCTORS - C. I. H. ASHBYAND R. M. BIEFELD SELECTIVE LASER-INDUCED
PHOTOCHEMICALDRY ETCH- 149 INGOFSEMICONDUCTORSCONTROLLEDBY
ION-BOMBARDMENT-INDUCED DAMAGE - C. I. H. ASHBY, D. R. MYERS, AND F. L.
VOOK VL LASER DRIVEN MATERIALSDEPOSITION DEPOSITION OFGOLD: VAPORAND
SOLUTION STUDIES - T. 156 H. BAUM KINETICSOFLASER-INDUCED CHEMICALVAPOR
DEPOSI- 163 TIONOFGOLD -T. T. KODAS, T. H. BAUM, AND P. B. COMITA
LASERDECOMPOSITION OF PLATINUMMETALLO-ORGANIC 172 FILMSFORELECTROLESS
COPPERPLATING -R. SAUSA, A.GUPTA AND J. R. WHITE LASER-ACTIVATED
COPPERDEPOSITION ONPOLYIMIDE - H. 187 S. COLE,Y. S. LIU, J. W. ROSE, R.
GUIDA, L. M. LEVINSON, AND H. R. PHITIPP VISIBLEAND
INFRAREDPHOTONEFFECTSON THEGROWTH 193 KINETICSOF SIDOTSPRODUCEDBY
LASER-INDUCED DE COMPOSITIONOF SILANE - G. AUVERT, D. TONNEAU AND Y.
PAULEAU SELECTIVEDEPOSITION OFGAAS AND ALFIA^ASBY LASER 203 ENHANCED
METALORGANICCHEMICALVAPORDEPOSITION - J. H. EDGAR, S. S. CHANG AND T. J.
ANDERSON QUANTUM YIELD FOR LASER-INDUCEDCVDOFSILICON 215 DIOXIDEAND
SILICON NITRIDE - A. WEBERAND R. ANDERSON
PHOTOELECTROCHEMICALLYINDUCEDGOLD DEPOSITON 226 ON P-GAASELECTRODES - J.
W.M. JACOBS AND J. M. G. RIKKEN DIRECT WRITINGOFTHIN FILMS
BYPYROLYTICLASERCVD 241 - Y. INOUE, A. ISHIZU, T. NISHIMURA, H. MIKI AND
Y. AKASAKA SUBJECTINDEX VII
|
| adam_txt |
PROCEEDINGS OF THE SYMPOSIUM ON LASER PROCESSES FOR MICROELECTRONIC
APPLICATIONS EDITED BY J. J. RITSKO D. J. EHRLICH IBM T. J. WATSON
RESEARCH CENTER MASSACHUSETTS INSTITUTE OF TECHNOLOGY YORKTOWN HEIGHTS,
NEW YORK LINCOLN LABORATORY LEXINGTON, MASSACHUSETTS M. KASHIWAGI
SEMICONDUCTOR ENGINEERING LABORATORY TOSHIBA RESEARCH AND DEVELOPMENT
CENTER 1 KOMUKAI TOSHIBA-MACHI SAIWAKU, KAWASAKI KANAGAWA 210, JAPAN
DIELECTRICSAND INSULATIONAND ELECTRONICS DIVISIONS PROCEEDINGS VOLUME
88-10 THE ELECTROCHEMICAL SOCIETY, INC., 10 SOUTH MAIN ST., PENNINGTON,
NJ08534-26 TABLE OF CONTENTS PREFACE DEVICE
FABRICATION,LITHOGRAPHY,DOPING LASER-DIRECT-WRITING TECHNIQUES
FORTUNINGAND 1 MODIFICATIONOFINTERCONNECTIONSON INTEGRATED AND
MULTIPLE-CHIPCIRCUITS - J. G. BLACK, C.-L. CHEN, M. ROTHSCHILD, S. P.
DORAN, L. J.MAHONEY, AND D. J. EHRLICH ADVANCED
KRFEXCMERLASERLITHOGRAPHYFOR 8 HALF-MICRONDEVICES - K. OGAWA,M.
SASAGO,M. ENDO, H. NAKAGAWA, Y. TANI AND T. ISHIHARA LOWTEMPERATURE SI
EPITAXY BYPHOTOCHEMICALVA- 21 PORDEPOSITION -M. KONAGAI,A. YAMADA, A.
SATOH, AND K. TAKAHASHI DIRECT WRITING OFGAASMONOLAYERS BYLASERASSISTED
29 ATOMICLAYEREPITAXY -N.H.KARAM,H. LIU, I. YOSHIDA AND S. M. BEDAIR
LASER DOPINGOFSEMICONDUCTORS - T. W. SIGNION 34
CHARACTERIZATIONOFDIODESFABRICATED USING THE 44 GAS IMMERSION
LASERDOPING (GILD) PROCESS IN SILICON -P. G. CAREY, AND T. W. SIGNION
MEASUREMENTS OFMELTDEPTHLIMITEDDIFFUSIONIN 53 GAS
IMMERSIONLASER-DOPEDSILICON USING AN IM PROVEDLASER SYSTEM - K. H.
WEINER, B.M. MCWILLIAMS, AND T. W. SIGNION MECHANISMOF ARFEXCMER
LASERDOPING USINGBF3 - S. 62 KATO, T. NAGAHORI, AND S. MALSUMOTO
LASERETCHING OF METALS, POLYMERS ANDSEMICONDUCTORS LASERMASS
SPECTROSCOPYOF LASERETCHINGANDCVD 70 PROCESSES - M. STUKE,Y. ZHANG
LASER-INDUCED VAPORIZATION TIME-RESOLVED MASS 82 SPECTROMETRY OF
REFRACTORIES - D. W. BONNELL, P. K. SCHENCK, AND J. W. HASTIE
EDGEPROFILECONTROL INLASERABLATION OF 95 POLYMERS: PROXIMITYETCHING - J.
T. C. YEH AND J. J. DONELON DRYLASERASSISTED ETCHINGOF PHOTORESISTS -G.
KOREN 104 ANDM. ANSCHEL LASER ASSISTED ETCHINGOFCHROMIUMAND COPPER - J.
113 R. LANKARD, F. C. BURNS, AND J. J. KAUFMAN
PHOTOCHEMICALLYINDUCEDETCHINGOF COPPER -C.R. 123 MOYLAN AND T. J. CHUANG
MECHANISTIC ASPECTS OF ARF LASERETCHING OF SIAND 130 MO WITHFATOM
PRECURSORS COF2AND NF3 - G. L.LOPER, S. H. SUCK SALK, ANDM. D. TABAT
EFFECTOFBANDGAP CHARACTERISTICS ON 143 LASER-INDUCEDDRYETCHINGOF
SEMICONDUCTORS - C. I. H. ASHBYAND R. M. BIEFELD SELECTIVE LASER-INDUCED
PHOTOCHEMICALDRY ETCH- 149 INGOFSEMICONDUCTORSCONTROLLEDBY
ION-BOMBARDMENT-INDUCED DAMAGE - C. I. H. ASHBY, D. R. MYERS, AND F. L.
VOOK VL LASER DRIVEN MATERIALSDEPOSITION DEPOSITION OFGOLD: VAPORAND
SOLUTION STUDIES - T. 156 H. BAUM KINETICSOFLASER-INDUCED CHEMICALVAPOR
DEPOSI- 163 TIONOFGOLD -T. T. KODAS, T. H. BAUM, AND P. B. COMITA
LASERDECOMPOSITION OF PLATINUMMETALLO-ORGANIC 172 FILMSFORELECTROLESS
COPPERPLATING -R. SAUSA, A.GUPTA AND J. R. WHITE LASER-ACTIVATED
COPPERDEPOSITION ONPOLYIMIDE - H. 187 S. COLE,Y. S. LIU, J. W. ROSE, R.
GUIDA, L. M. LEVINSON, AND H. R. PHITIPP VISIBLEAND
INFRAREDPHOTONEFFECTSON THEGROWTH 193 KINETICSOF SIDOTSPRODUCEDBY
LASER-INDUCED DE COMPOSITIONOF SILANE - G. AUVERT, D. TONNEAU AND Y.
PAULEAU SELECTIVEDEPOSITION OFGAAS AND ALFIA^ASBY LASER 203 ENHANCED
METALORGANICCHEMICALVAPORDEPOSITION - J. H. EDGAR, S. S. CHANG AND T. J.
ANDERSON QUANTUM YIELD FOR LASER-INDUCEDCVDOFSILICON 215 DIOXIDEAND
SILICON NITRIDE - A. WEBERAND R. ANDERSON
PHOTOELECTROCHEMICALLYINDUCEDGOLD DEPOSITON 226 ON P-GAASELECTRODES - J.
W.M. JACOBS AND J. M. G. RIKKEN DIRECT WRITINGOFTHIN FILMS
BYPYROLYTICLASERCVD 241 - Y. INOUE, A. ISHIZU, T. NISHIMURA, H. MIKI AND
Y. AKASAKA SUBJECTINDEX VII |
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| indexdate | 2024-07-09T20:51:08Z |
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| institution_GND | (DE-588)16143148-3 |
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| physical | VII, 251 S. graph. Darst. |
| publishDate | 1988 |
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| spelling | Symposium on Laser Processes for Microelectronic Applications Verfasser (DE-588)16143148-3 aut Proceedings of the Symposium on Laser Processes for Microelectronic Applications ed. by J.J. Ritsko... Laser processes for microelectronic applications Pennington, NJ Electrochem. Soc. 1988 VII, 251 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Proceedings / Electrochemical Society 88,10 Lasers Industrial applications Congresses Microelectronics Congresses Laser (DE-588)4034610-9 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Laser (DE-588)4034610-9 s DE-604 Halbleitertechnologie (DE-588)4158814-9 s Ritsko, J. J. Sonstige oth Electrochemical Society Proceedings 88,10 (DE-604)BV001900941 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015349453&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the Symposium on Laser Processes for Microelectronic Applications Lasers Industrial applications Congresses Microelectronics Congresses Laser (DE-588)4034610-9 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| subject_GND | (DE-588)4034610-9 (DE-588)4158814-9 (DE-588)1071861417 |
| title | Proceedings of the Symposium on Laser Processes for Microelectronic Applications |
| title_alt | Laser processes for microelectronic applications |
| title_auth | Proceedings of the Symposium on Laser Processes for Microelectronic Applications |
| title_exact_search | Proceedings of the Symposium on Laser Processes for Microelectronic Applications |
| title_exact_search_txtP | Proceedings of the Symposium on Laser Processes for Microelectronic Applications |
| title_full | Proceedings of the Symposium on Laser Processes for Microelectronic Applications ed. by J.J. Ritsko... |
| title_fullStr | Proceedings of the Symposium on Laser Processes for Microelectronic Applications ed. by J.J. Ritsko... |
| title_full_unstemmed | Proceedings of the Symposium on Laser Processes for Microelectronic Applications ed. by J.J. Ritsko... |
| title_short | Proceedings of the Symposium on Laser Processes for Microelectronic Applications |
| title_sort | proceedings of the symposium on laser processes for microelectronic applications |
| topic | Lasers Industrial applications Congresses Microelectronics Congresses Laser (DE-588)4034610-9 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| topic_facet | Lasers Industrial applications Congresses Microelectronics Congresses Laser Halbleitertechnologie Konferenzschrift |
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