Hot-carrier reliability of MOS VLSI circuits:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boston [u.a.]
Kluwer
1993
|
| Schriftenreihe: | The Kluwer international series in engineering and computer science
227 |
| Schlagworte: | |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XVI, 212 S. graph. Darst. |
| ISBN: | 079239352X |
Internformat
MARC
| LEADER | 00000nam a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV022128643 | ||
| 003 | DE-604 | ||
| 005 | 20040302000000.0 | ||
| 007 | t | ||
| 008 | 980406s1993 d||| |||| 00||| eng d | ||
| 020 | |a 079239352X |9 0-7923-9352-X | ||
| 035 | |a (OCoLC)27937993 | ||
| 035 | |a (DE-599)BVBBV022128643 | ||
| 040 | |a DE-604 |b ger | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-706 | ||
| 050 | 0 | |a TK7874 | |
| 082 | 0 | |a 621.39/5 |2 20 | |
| 100 | 1 | |a Leblebici, Yusuf |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Hot-carrier reliability of MOS VLSI circuits |c by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
| 264 | 1 | |a Boston [u.a.] |b Kluwer |c 1993 | |
| 300 | |a XVI, 212 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a The Kluwer international series in engineering and computer science |v 227 | |
| 500 | |a Literaturangaben | ||
| 650 | 7 | |a Circuits intégrés à très grande échelle |2 ram | |
| 650 | 7 | |a Porteurs chauds |2 ram | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Hot carriers |x Reliability |x Mathematical models | |
| 650 | 4 | |a Integrated circuits |x Very large scale integration |x Defects |x Mathematical models | |
| 650 | 4 | |a Metal oxide semiconductors |x Reliability |x Mathematical models | |
| 650 | 0 | 7 | |a Zuverlässigkeit |0 (DE-588)4059245-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Mathematisches Modell |0 (DE-588)4114528-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Integrierte Schaltung |0 (DE-588)4027242-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a VLSI |0 (DE-588)4117388-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heißes Elektron |0 (DE-588)4159455-1 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Integrierte Schaltung |0 (DE-588)4027242-4 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Zuverlässigkeit |0 (DE-588)4059245-5 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Mathematisches Modell |0 (DE-588)4114528-8 |D s |
| 689 | 2 | |5 DE-604 | |
| 689 | 3 | 0 | |a Heißes Elektron |0 (DE-588)4159455-1 |D s |
| 689 | 3 | 1 | |a MOS |0 (DE-588)4130209-6 |D s |
| 689 | 3 | 2 | |a VLSI |0 (DE-588)4117388-0 |D s |
| 689 | 3 | |8 1\p |5 DE-604 | |
| 689 | 4 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
| 689 | 4 | |5 DE-604 | |
| 700 | 1 | |a Kang, Songmo |e Verfasser |4 aut | |
| 830 | 0 | |a The Kluwer international series in engineering and computer science |v 227 |w (DE-604)BV023545171 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-015343271 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804136100898275328 |
|---|---|
| adam_txt | |
| any_adam_object | |
| any_adam_object_boolean | |
| author | Leblebici, Yusuf Kang, Songmo |
| author_facet | Leblebici, Yusuf Kang, Songmo |
| author_role | aut aut |
| author_sort | Leblebici, Yusuf |
| author_variant | y l yl s k sk |
| building | Verbundindex |
| bvnumber | BV022128643 |
| callnumber-first | T - Technology |
| callnumber-label | TK7874 |
| callnumber-raw | TK7874 |
| callnumber-search | TK7874 |
| callnumber-sort | TK 47874 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)27937993 (DE-599)BVBBV022128643 |
| dewey-full | 621.39/5 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.39/5 |
| dewey-search | 621.39/5 |
| dewey-sort | 3621.39 15 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02399nam a2200625zcb4500</leader><controlfield tag="001">BV022128643</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20040302000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">980406s1993 d||| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">079239352X</subfield><subfield code="9">0-7923-9352-X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)27937993</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV022128643</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-706</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7874</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.39/5</subfield><subfield code="2">20</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Leblebici, Yusuf</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Hot-carrier reliability of MOS VLSI circuits</subfield><subfield code="c">by Yusuf Leblebici ; Sung-Mo (Steve) Kang</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston [u.a.]</subfield><subfield code="b">Kluwer</subfield><subfield code="c">1993</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XVI, 212 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">The Kluwer international series in engineering and computer science</subfield><subfield code="v">227</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Circuits intégrés à très grande échelle</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Porteurs chauds</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematisches Modell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Hot carriers</subfield><subfield code="x">Reliability</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Integrated circuits</subfield><subfield code="x">Very large scale integration</subfield><subfield code="x">Defects</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors</subfield><subfield code="x">Reliability</subfield><subfield code="x">Mathematical models</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Zuverlässigkeit</subfield><subfield code="0">(DE-588)4059245-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Mathematisches Modell</subfield><subfield code="0">(DE-588)4114528-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Integrierte Schaltung</subfield><subfield code="0">(DE-588)4027242-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">VLSI</subfield><subfield code="0">(DE-588)4117388-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heißes Elektron</subfield><subfield code="0">(DE-588)4159455-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Integrierte Schaltung</subfield><subfield code="0">(DE-588)4027242-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Zuverlässigkeit</subfield><subfield code="0">(DE-588)4059245-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Mathematisches Modell</subfield><subfield code="0">(DE-588)4114528-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Heißes Elektron</subfield><subfield code="0">(DE-588)4159455-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2="1"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2="2"><subfield code="a">VLSI</subfield><subfield code="0">(DE-588)4117388-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">MOS</subfield><subfield code="0">(DE-588)4130209-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kang, Songmo</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">The Kluwer international series in engineering and computer science</subfield><subfield code="v">227</subfield><subfield code="w">(DE-604)BV023545171</subfield><subfield code="9"></subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-015343271</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| id | DE-604.BV022128643 |
| illustrated | Illustrated |
| index_date | 2024-07-02T16:16:37Z |
| indexdate | 2024-07-09T20:51:02Z |
| institution | BVB |
| isbn | 079239352X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015343271 |
| oclc_num | 27937993 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | XVI, 212 S. graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| publisher | Kluwer |
| record_format | marc |
| series | The Kluwer international series in engineering and computer science |
| series2 | The Kluwer international series in engineering and computer science |
| spelling | Leblebici, Yusuf Verfasser aut Hot-carrier reliability of MOS VLSI circuits by Yusuf Leblebici ; Sung-Mo (Steve) Kang Boston [u.a.] Kluwer 1993 XVI, 212 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier The Kluwer international series in engineering and computer science 227 Literaturangaben Circuits intégrés à très grande échelle ram Porteurs chauds ram Mathematisches Modell Hot carriers Reliability Mathematical models Integrated circuits Very large scale integration Defects Mathematical models Metal oxide semiconductors Reliability Mathematical models Zuverlässigkeit (DE-588)4059245-5 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf Mathematisches Modell (DE-588)4114528-8 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf Heißes Elektron (DE-588)4159455-1 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 s DE-604 Zuverlässigkeit (DE-588)4059245-5 s Mathematisches Modell (DE-588)4114528-8 s Heißes Elektron (DE-588)4159455-1 s MOS (DE-588)4130209-6 s VLSI (DE-588)4117388-0 s 1\p DE-604 Kang, Songmo Verfasser aut The Kluwer international series in engineering and computer science 227 (DE-604)BV023545171 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Leblebici, Yusuf Kang, Songmo Hot-carrier reliability of MOS VLSI circuits The Kluwer international series in engineering and computer science Circuits intégrés à très grande échelle ram Porteurs chauds ram Mathematisches Modell Hot carriers Reliability Mathematical models Integrated circuits Very large scale integration Defects Mathematical models Metal oxide semiconductors Reliability Mathematical models Zuverlässigkeit (DE-588)4059245-5 gnd MOS (DE-588)4130209-6 gnd Mathematisches Modell (DE-588)4114528-8 gnd Integrierte Schaltung (DE-588)4027242-4 gnd VLSI (DE-588)4117388-0 gnd Heißes Elektron (DE-588)4159455-1 gnd |
| subject_GND | (DE-588)4059245-5 (DE-588)4130209-6 (DE-588)4114528-8 (DE-588)4027242-4 (DE-588)4117388-0 (DE-588)4159455-1 |
| title | Hot-carrier reliability of MOS VLSI circuits |
| title_auth | Hot-carrier reliability of MOS VLSI circuits |
| title_exact_search | Hot-carrier reliability of MOS VLSI circuits |
| title_exact_search_txtP | Hot-carrier reliability of MOS VLSI circuits |
| title_full | Hot-carrier reliability of MOS VLSI circuits by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
| title_fullStr | Hot-carrier reliability of MOS VLSI circuits by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
| title_full_unstemmed | Hot-carrier reliability of MOS VLSI circuits by Yusuf Leblebici ; Sung-Mo (Steve) Kang |
| title_short | Hot-carrier reliability of MOS VLSI circuits |
| title_sort | hot carrier reliability of mos vlsi circuits |
| topic | Circuits intégrés à très grande échelle ram Porteurs chauds ram Mathematisches Modell Hot carriers Reliability Mathematical models Integrated circuits Very large scale integration Defects Mathematical models Metal oxide semiconductors Reliability Mathematical models Zuverlässigkeit (DE-588)4059245-5 gnd MOS (DE-588)4130209-6 gnd Mathematisches Modell (DE-588)4114528-8 gnd Integrierte Schaltung (DE-588)4027242-4 gnd VLSI (DE-588)4117388-0 gnd Heißes Elektron (DE-588)4159455-1 gnd |
| topic_facet | Circuits intégrés à très grande échelle Porteurs chauds Mathematisches Modell Hot carriers Reliability Mathematical models Integrated circuits Very large scale integration Defects Mathematical models Metal oxide semiconductors Reliability Mathematical models Zuverlässigkeit MOS Integrierte Schaltung VLSI Heißes Elektron |
| volume_link | (DE-604)BV023545171 |
| work_keys_str_mv | AT leblebiciyusuf hotcarrierreliabilityofmosvlsicircuits AT kangsongmo hotcarrierreliabilityofmosvlsicircuits |