Electronic structure and optical properties of semiconductors:
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Berlin [u.a.]
Springer
1989
|
Ausgabe: | 2. ed. |
Schriftenreihe: | Springer series in solid-state sciences
75 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | XII, 264 S. zahlr. Ill. u. graph. Darst. |
ISBN: | 3540513914 0387513914 |
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Datensatz im Suchindex
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adam_text | Titel: Electronic structure and optical properties of semiconductors
Autor: Cohen, Marvin L.
Jahr: 1989
Contents
1. Introduction 1
2. Theoretical Concepts and Methods 4
2.1 The One-Electron Model and Band Structure 7
2.2 Properties of E„(k) 11
3. Pseudopotentials 16
3.1 The Empirical Pseudopotential Method 20
3.2 Self-Consistent and Ab Initio Pseudopotentials 25
4. Response Functions and Density of States 30
4.1 Charge Density and Bonding 38
5. Low Energy Probes of Semiconductors 43
5.1 Band Gap Measurements 43
5.2 Excitonic Effects Near Band Edges 45
5.3 Cyclotron Resonance 47
5.4 Doping Effects in Semiconductors 49
6. Optical and Electronic Spectra of Semiconductors 51
6.1 Modulation Spectroscopy 51
6.1.1 Wavelength Modulation 53
6.1.2 Temperature Modulation 54
6.1.3 Stress Modulation 56
6.1.4 Electric Field Modulation 57
6.1.5 Other Modulation Methods 59
6.2 High Energy Reflectivity Measurements 60
6.3 Photoemission Spectra of Semiconductors 61
6.3.1 X-Ray Photoemission Spectroscopy (XPS) and
Ultraviolet Photoemission Spectroscopy (UPS) 64
6.3.2 Constant Final State and Constant Initial State
Spectroscopies 66
6.3.3 Angle-Resolved Photoemission Spectroscopy 67
6.3.4 Photoelectron Yield Spectroscopy 69
6.4 Electron Energy Loss Spectroscopy for Semiconductors ... 69
6.4.1 Plasmon Excitations in Solids 70
6.4.2 Experimental Measurements and Results 71
IX
7. High Energy Probes of Semiconductors: X-Rays 73
7.1 Crystal Structure Determinations 73
7.2 Charge Density Determinations Using X-Rays 74
7.3 Temperature Dependence of X-Ray Reflections 76
. 8. Diamond and Zinc-Blende Structure Semiconductors . 79
8.1 Crystal Structure 79
8.2 The Electronic Structure of Silicon 80
8.3 The Electronic Structure of Germanium 92
8.4 The Electronic Structure of Gray Tin 98
8.5 Zinc-Blende Structure Semiconductors 101
8.6 The Electronic Structure of Gallium Arsenide 102
8.7 The Electronic Structure of Zinc Selenide 112
8.8 The Electronic Structure of Other III-V and II-VI
Semiconductors 117
9. Wurtzite Structure Semiconductors 140
9.1 The Electronic Structure of Hexagonal Zinc Sulfide 144
9.2 The Electronic Structure of Hexagonal CdS and CdSe 154
9.3 The Electronic Structure of Hexagonal ZnO 157
10. Chalcopyrite Structure Semiconductors 161
11. IV-VI Semiconductors 172
11.1 Electronic Band Structure 173
11.2 Applications of the Electronic Band Structure 182
12. Triatomic, Layer, Chain, and Amorphous Models 189
References 205
Bibliography: Electronic Structure and Optical
Properties of Semiconductors 213
B.l Properties of Semiconductors 213
B.l.l Charge Densities in Semiconductors 213
B.1.2 Chemical Trends and Bonding in Semiconductors 213
B.l.3 Compilation of Properties of Semiconductors 214
B.1.4 Electronic Structure of Semiconductors 215
B.1.5 Lattice Forces and Dynamics 216
B.l.6 Optical and Dielectric Properties of Solids 217
B.1.7 Photoemission and Electron Spectroscopies 220
B.l.8 Temperature and Pressure Effects in Semiconductors ... 221
X
B.2 General Semiconductor Articles 222
B.2.1 II-VI Semiconductors 222
B.2.2 IH-V Semiconductors 223
B.2.3 IV-IV Semiconductors 225
B.2.4 IV-VI Semiconductors 226
B.3 Chalcopyrite Semiconductors 227
B.4 Properties of Specific Semiconductors 227
B.4.1 Aluminum Antimonide 227
B.4.2 Beryllium Oxide 228
B.4.3 Bismuth Triiodide 228
B.4.4 Cadmium Germanium Arsenide 228
B.4.5 Cadmium Oxide 228
B.4.6 Cadmium Selenide 228
B.4.7 Cadmium Sulphide 229
B.4.8 Cadmium Telluride 230
B.4.9 Carbon 231
B.4.10 Copper Bromide 232
B.4.11 Copper Chloride 232
B.4.12 Copper Iodide 232
B.4.13 Gallium Antimonide 233
B.4.14 Gallium Arsenide 234
B.4.15 Gallium Phosphide 237
B.4.16 Gallium Selenide 239
B.4.17 Gallium Sulphide 239
B.4.18 Gallium Telluride 240
B.4.19 Germanium 240
B.4.20 Germanium Telluride 243
B .4.21 Indium Antimonide 244
B.4.22 Indium Arsenide 245
B.4.23 Indium Phosphide 245
B.4.24 Lead Diiodide 246
B.4.25 Lead Selenide 246
B.4.26 Lead Sulphide 247
B.4.27 Lead Telluride 247
B.4.28 Magnesium Oxide 248
B.4.29 Magnesium Silicide 248
B.4.30 Mercury Selenide 248
B.4.31 Mercury Sulphide 248
B.4.32 Mercury Telluride 248
B.4.33 Selenium 249
B.4.34 Silicon 249
B.4.35 Silver Chloride 254
B.4.36 Silver Iodide 254
B.4.37 Tellurium 254
XI
B.4.38 Tm 255
B.4.39 Tin Diselenide 255
B.4.40 Tin Disulphide 256
B.4.41 Tin Telluride 256
B.4.42 Zinc Germanium Phosphide 256
B.4.43 Zinc Oxide 257
B.4.44 Zinc Selenide 257
B.4.45 Zinc Sulphide 258
B.4.46 Zinc Telluride 259
Subject Index 261
XII
|
adam_txt |
Titel: Electronic structure and optical properties of semiconductors
Autor: Cohen, Marvin L.
Jahr: 1989
Contents
1. Introduction 1
2. Theoretical Concepts and Methods 4
2.1 The One-Electron Model and Band Structure 7
2.2 Properties of E„(k) 11
3. Pseudopotentials 16
3.1 The Empirical Pseudopotential Method 20
3.2 Self-Consistent and Ab Initio Pseudopotentials 25
4. Response Functions and Density of States 30
4.1 Charge Density and Bonding 38
5. Low Energy Probes of Semiconductors 43
5.1 Band Gap Measurements 43
5.2 Excitonic Effects Near Band Edges 45
5.3 Cyclotron Resonance 47
5.4 Doping Effects in Semiconductors 49
6. Optical and Electronic Spectra of Semiconductors 51
6.1 Modulation Spectroscopy 51
6.1.1 Wavelength Modulation 53
6.1.2 Temperature Modulation 54
6.1.3 Stress Modulation 56
6.1.4 Electric Field Modulation 57
6.1.5 Other Modulation Methods 59
6.2 High Energy Reflectivity Measurements 60
6.3 Photoemission Spectra of Semiconductors 61
6.3.1 X-Ray Photoemission Spectroscopy (XPS) and
Ultraviolet Photoemission Spectroscopy (UPS) 64
6.3.2 Constant Final State and Constant Initial State
Spectroscopies 66
6.3.3 Angle-Resolved Photoemission Spectroscopy 67
6.3.4 Photoelectron Yield Spectroscopy 69
6.4 Electron Energy Loss Spectroscopy for Semiconductors . 69
6.4.1 Plasmon Excitations in Solids 70
6.4.2 Experimental Measurements and Results 71
IX
7. High Energy Probes of Semiconductors: X-Rays 73
7.1 Crystal Structure Determinations 73
7.2 Charge Density Determinations Using X-Rays 74
7.3 Temperature Dependence of X-Ray Reflections 76
. 8. Diamond and Zinc-Blende Structure Semiconductors . 79
8.1 Crystal Structure 79
8.2 The Electronic Structure of Silicon 80
8.3 The Electronic Structure of Germanium 92
8.4 The Electronic Structure of Gray Tin 98
8.5 Zinc-Blende Structure Semiconductors 101
8.6 The Electronic Structure of Gallium Arsenide 102
8.7 The Electronic Structure of Zinc Selenide 112
8.8 The Electronic Structure of Other III-V and II-VI
Semiconductors 117
9. Wurtzite Structure Semiconductors 140
9.1 The Electronic Structure of Hexagonal Zinc Sulfide 144
9.2 The Electronic Structure of Hexagonal CdS and CdSe 154
9.3 The Electronic Structure of Hexagonal ZnO 157
10. Chalcopyrite Structure Semiconductors 161
11. IV-VI Semiconductors 172
11.1 Electronic Band Structure 173
11.2 Applications of the Electronic Band Structure 182
12. Triatomic, Layer, Chain, and Amorphous Models 189
References 205
Bibliography: Electronic Structure and Optical
Properties of Semiconductors 213
B.l Properties of Semiconductors 213
B.l.l Charge Densities in Semiconductors 213
B.1.2 Chemical Trends and Bonding in Semiconductors 213
B.l.3 Compilation of Properties of Semiconductors 214
B.1.4 Electronic Structure of Semiconductors 215
B.1.5 Lattice Forces and Dynamics 216
B.l.6 Optical and Dielectric Properties of Solids 217
B.1.7 Photoemission and Electron Spectroscopies 220
B.l.8 Temperature and Pressure Effects in Semiconductors . 221
X
B.2 General Semiconductor Articles 222
B.2.1 II-VI Semiconductors 222
B.2.2 IH-V Semiconductors 223
B.2.3 IV-IV Semiconductors 225
B.2.4 IV-VI Semiconductors 226
B.3 Chalcopyrite Semiconductors 227
B.4 Properties of Specific Semiconductors 227
B.4.1 Aluminum Antimonide 227
B.4.2 Beryllium Oxide 228
B.4.3 Bismuth Triiodide 228
B.4.4 Cadmium Germanium Arsenide 228
B.4.5 Cadmium Oxide 228
B.4.6 Cadmium Selenide 228
B.4.7 Cadmium Sulphide 229
B.4.8 Cadmium Telluride 230
B.4.9 Carbon 231
B.4.10 Copper Bromide 232
B.4.11 Copper Chloride 232
B.4.12 Copper Iodide 232
B.4.13 Gallium Antimonide 233
B.4.14 Gallium Arsenide 234
B.4.15 Gallium Phosphide 237
B.4.16 Gallium Selenide 239
B.4.17 Gallium Sulphide 239
B.4.18 Gallium Telluride 240
B.4.19 Germanium 240
B.4.20 Germanium Telluride 243
B .4.21 Indium Antimonide 244
B.4.22 Indium Arsenide 245
B.4.23 Indium Phosphide 245
B.4.24 Lead Diiodide 246
B.4.25 Lead Selenide 246
B.4.26 Lead Sulphide 247
B.4.27 Lead Telluride 247
B.4.28 Magnesium Oxide 248
B.4.29 Magnesium Silicide 248
B.4.30 Mercury Selenide 248
B.4.31 Mercury Sulphide 248
B.4.32 Mercury Telluride 248
B.4.33 Selenium 249
B.4.34 Silicon 249
B.4.35 Silver Chloride 254
B.4.36 Silver Iodide 254
B.4.37 Tellurium 254
XI
B.4.38 Tm 255
B.4.39 Tin Diselenide 255
B.4.40 Tin Disulphide 256
B.4.41 Tin Telluride 256
B.4.42 Zinc Germanium Phosphide 256
B.4.43 Zinc Oxide 257
B.4.44 Zinc Selenide 257
B.4.45 Zinc Sulphide 258
B.4.46 Zinc Telluride 259
Subject Index 261
XII |
any_adam_object | 1 |
any_adam_object_boolean | 1 |
author | Cohen, Marvin L. 1935- Chelikowsky, James R. 1948- |
author_GND | (DE-588)1089211996 (DE-588)172019176 |
author_facet | Cohen, Marvin L. 1935- Chelikowsky, James R. 1948- |
author_role | aut aut |
author_sort | Cohen, Marvin L. 1935- |
author_variant | m l c ml mlc j r c jr jrc |
building | Verbundindex |
bvnumber | BV022019244 |
classification_rvk | UP 1090 UP 2800 UP 3000 ZN 3460 |
ctrlnum | (OCoLC)263117942 (DE-599)BVBBV022019244 |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
discipline_str_mv | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
edition | 2. ed. |
format | Book |
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id | DE-604.BV022019244 |
illustrated | Illustrated |
index_date | 2024-07-02T16:12:13Z |
indexdate | 2024-07-09T20:49:20Z |
institution | BVB |
isbn | 3540513914 0387513914 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015233880 |
oclc_num | 263117942 |
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owner | DE-706 |
owner_facet | DE-706 |
physical | XII, 264 S. zahlr. Ill. u. graph. Darst. |
publishDate | 1989 |
publishDateSearch | 1989 |
publishDateSort | 1989 |
publisher | Springer |
record_format | marc |
series | Springer series in solid-state sciences |
series2 | Springer series in solid-state sciences |
spelling | Cohen, Marvin L. 1935- Verfasser (DE-588)1089211996 aut Electronic structure and optical properties of semiconductors Marvin L. Cohen ; James R. Chelikowsky 2. ed. Berlin [u.a.] Springer 1989 XII, 264 S. zahlr. Ill. u. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in solid-state sciences 75 Optische Eigenschaft (DE-588)4123887-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Bandstruktur (DE-588)4143994-6 gnd rswk-swf Elektronenstruktur (DE-588)4129531-6 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Elektron (DE-588)4125978-6 gnd rswk-swf Elektron (DE-588)4125978-6 s DE-604 Bandstruktur (DE-588)4143994-6 s Halbleiter (DE-588)4022993-2 s Optische Eigenschaft (DE-588)4123887-4 s 1\p DE-604 Elektronenstruktur (DE-588)4129531-6 s 2\p DE-604 Halbleiterphysik (DE-588)4113829-6 s 3\p DE-604 Chelikowsky, James R. 1948- Verfasser (DE-588)172019176 aut Springer series in solid-state sciences 75 (DE-604)BV000016582 75 HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015233880&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Cohen, Marvin L. 1935- Chelikowsky, James R. 1948- Electronic structure and optical properties of semiconductors Springer series in solid-state sciences Optische Eigenschaft (DE-588)4123887-4 gnd Halbleiter (DE-588)4022993-2 gnd Bandstruktur (DE-588)4143994-6 gnd Elektronenstruktur (DE-588)4129531-6 gnd Halbleiterphysik (DE-588)4113829-6 gnd Elektron (DE-588)4125978-6 gnd |
subject_GND | (DE-588)4123887-4 (DE-588)4022993-2 (DE-588)4143994-6 (DE-588)4129531-6 (DE-588)4113829-6 (DE-588)4125978-6 |
title | Electronic structure and optical properties of semiconductors |
title_auth | Electronic structure and optical properties of semiconductors |
title_exact_search | Electronic structure and optical properties of semiconductors |
title_exact_search_txtP | Electronic structure and optical properties of semiconductors |
title_full | Electronic structure and optical properties of semiconductors Marvin L. Cohen ; James R. Chelikowsky |
title_fullStr | Electronic structure and optical properties of semiconductors Marvin L. Cohen ; James R. Chelikowsky |
title_full_unstemmed | Electronic structure and optical properties of semiconductors Marvin L. Cohen ; James R. Chelikowsky |
title_short | Electronic structure and optical properties of semiconductors |
title_sort | electronic structure and optical properties of semiconductors |
topic | Optische Eigenschaft (DE-588)4123887-4 gnd Halbleiter (DE-588)4022993-2 gnd Bandstruktur (DE-588)4143994-6 gnd Elektronenstruktur (DE-588)4129531-6 gnd Halbleiterphysik (DE-588)4113829-6 gnd Elektron (DE-588)4125978-6 gnd |
topic_facet | Optische Eigenschaft Halbleiter Bandstruktur Elektronenstruktur Halbleiterphysik Elektron |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015233880&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV000016582 |
work_keys_str_mv | AT cohenmarvinl electronicstructureandopticalpropertiesofsemiconductors AT chelikowskyjamesr electronicstructureandopticalpropertiesofsemiconductors |