Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004): Cullera (Valencia), Spain, 14 - 19 March 2004
Gespeichert in:
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
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Wiley-VCH
2005
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben. - In: Physica status solidi : C, Conferences and critical reviews ; 2 (2005),9 |
| Beschreibung: | S. 3185 - 3509 Ill., graph. Darst. |
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| 245 | 1 | 0 | |a Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) |b Cullera (Valencia), Spain, 14 - 19 March 2004 |
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| adam_text | CONFERENCES AND CRITICAL REVIEWS EDITOR-IN-CHIEF MARTIN STUTZMANN WALTER
SCHOTTKY INSTITUT, TECHNISCHE UNIVERSITAT MUNCHEN, AM COULOMBWALL, 85748
GARCHING, GERMANY FAX: +49 (0) 89/28 91-27 37; E-MAIL: STUTZ@WSI.TUM.DE
REGIONAL EDITORS MARTIN S. BRANDT WALTER-SCHOTTKY-LNSTITUT, TECHNISCHE
UNIVERSITAT MUNCHEN, AM COULOMBWALL, 85748 GARCHING, GERMANY FAX:+49
(0)89/28 91-27 37; E-MAIL: MBRANDT@PHYSIK.TU-MUENCHEN.DE SHUIT-TONG LEE
CENTRE OF SUPER-DIAMOND AND ADVANCED FILMS (COSDAF) AND DEPARTMENT OF
PHYSICS AND MATERIALS SCIENCE CITY UNIVERSITY OF HONG KONG, 83 TAT CHEE
AVENUE, KOWLOON, HONG KONG SAR FAX: +8 52/27 84 46 96; E-MAIL:
APANNALE@CITYU.EDU.HK PABLO ORDEJON INSTITUT DE CIENCIA DE MATERIALS DE
BARCELONA - CSIC CAMPUS DE LA U.A.B., 08193 BELLATERRA, BARCELONA, SPAIN
FAX: +34 93/5 80 57 29; E-MAIL: ORDEJON@ICMAB.ES MICHAEL SHUR
ELECTRICAL, COMPUTER, AND SYSTEMS ENGINEERING DEPARTMENT AND PHYSICS
DEPARTMENT, RENSSELAER POLYTECHNIC INSTITUTE, 110 8TH STREET, TROY, NY
12180, USA FAX: +1 (518) 276 2990; E-MAIL: SHURM@RPI.EDU JOHN I. B.
WILSON DEPARTMENT OF PHYSICS, HERIOT WATT UNIVERSITY, RICCARTON,
EDINBURGH EH14 4AS, UK FAX: +44 (0) 1 31/4 51 31 36; E-MAIL:
J.I.B.WILSON@HW.AC.UK 2 9 2005 )WILEY-VCH MANAGING EDITOR STEFAN
HILDEBRANDT EDITORIAL OFFICE, WILEY-VCH VERLAG GMBH & CO. KGAA,
BUHRINGSTRAFLE 10, 13086 BERLIN, GERMANY FAX: +49 (0) 30/47 03 13 34;
E-MAIL: PSS@WILEY-VCH.DE TIB/UB HANNOVER 89 126 534 152 CONTENTS FULL
TEXT ON OUR HOMEPAGE AT: HTTP://WWW.PSS-C.COM PAPERS PRESENTED AT THE
4TH INTERNATIONAL CONFERENCE ON POROUS SEMICONDUCTORS - SCIENCE AND
TECHNOLOGY (PSST-2004) CULLERA (VALENCIA), SPAIN, 14-19 MARCH 2004
ORIGINAL PAPERS HISTORICAL PERSPECTIVE ON THE DISCOVERY OF POROUS
SILICON ARTHUR UHLIR JR. AND INGEBORG (WILLIAMS) UHLIR 3185-3187
PHOTOLUMINESCENCE FATIGUE EFFECT IN LUMINESCENT POROUS SILICON INDUCED
BY PHOTOSENSITIZED MOLECULAR OXYGEN D. KOVALEV, E. GROSS, J. DIENER, V.
TIMOSHENKO, AND M. FUJII 3188-3192 CARRIERS REACTIVATION IN P*-TYPE
POROUS SILICON ACCOMPANIES HYDROGEN DESORPTION P. RIVOLO, F. GEOBALDO,
G. P. SALVADOR, L. PALLAVIDINO, P. UGLIENGO, AND E. GARRONE 3193-3197
FABRICATION OF REGULAR SILICON MICROSTRUCTURES BY PHOTO-ELECTROCHEMICAL
ETCHING OF SILICON G. BARILLARO, P. BRUSCHI, A. DILIGENTI, AND A.
NANNINI 3198-3202 STRESS EFFECTS IN MESO-POROUS SILICON NANOSTRUCTURES
V. LYSENKO, C. POPULAIRE, B. REMAKI, B. CHAMPAGNON, H. ARTMANN, T.
PANNEK, ANDD. BARBIER 3203-3207 POROSITY PROFILE DETERMINATION OF POROUS
SILICON INTERFERENCE FILTERS BY RBS V. TORRES-COSTA, F. PASZTI, A.
CLIMENT-FONT, R. J. MARTIN-PALMA, AND J. M. MARTINEZ-DUART. . .
3208-3212 SILICA MICRO TUBES FORMED DURING THE PATTERNING OF OXIDIZED
MACROPOROUS SILICON E. V. ASTROVA, T. N. BOROVINSKAYA, T. PEROVA, AND M.
V. ZAMORYANSKAYA 3213-3217 NANOCOMPOSITES OBTAINED BY EMBEDDING OF
CONJUGATED POLYMERS IN POROUS SILICON AND SILICA N. ERRIEN, L.
VELLUTINI, G. FROYER, G. LOUARN, C. SIMOS, V. SKARKA, S. HAESAERT, AND
P. JOUBERT 3218-3221 NON-LINEAR OPTICAL PROPERTIES OF POLY(PHENYLENE
VINYLENE) IN POROUS SILICON SUBSTRATES T. P. NGUYEN, P. LE RENDU, C.
SIMOS, P. X. NGUYEN, V. SKARKA, M. DE KOK, K. W. CHEAH, M. GUENDOUZ, AND
P. JOUBERT 3222-3226 FABRICATION AND OPTIMIZATION OF RUGATE FILTERS
BASED ON POROUS SILICON E. LORENZO, C. J. OTON, N. E. CAPUJ, M.
GHULINYAN, D. NAVARRO-URRIOS, Z. GABURRO, ANDL. PAVESI 3227-3231
MEASUREMENT OF THE THIRD ORDER NONLINEAR PROPERTIES OF CONJUGATED
POLYMERS EMBEDDED IN POROUS SILICON AND SILICA C. SIMOS, L. RODRIGUEZ,
V. SKARKA, X. NGUYEN PHU, N. ERRIEN, G. FROYER, T. P. NGUYEN, P. LE
RENDU, AND P. PIRASTESH 3232-3236 NUCLEATION AND GROWTH OF MACRO PORES
ON (100) N-TYPE GE S. LANGA, J. CARSTENSEN, I. M. TIGINYANU, AND H. FOIL
3237-3242 FORMATION OF POROUS GE USING HF-BASED ELECTROLYTES GIOVANNI
FLAMAND, JEF POORTMANS, AND KRISTOF DESSEIN 3243-3247 3180 CONTENTS
POROUS GALLIUM PHOSPHIDE: CHALLENGING MATERIAL FOR NONLINEAR-OPTICAL
APPLICATIONS V. A. MELNIKOV, L. A. GOLOVAN, S. O. KONOROV, A. B.
FEDOTOV, G. I. PETROV, L. LI, V. V. YAKOVLEV, S. A. GAVRILOV, A. M.
ZHELTIKOV, V. YU. TIMOSHENKO, AND P. K. KASHKAROV . . 3248-3252
ENGINEERING THE MORPHOLOGY OF POROUS INP FOR WAVEGUIDE APPLICATIONS S.
LANGA, S. LOLKES, J. CARSTENSEN, M. HERMANN, G. BOTTGER, I. M.
TIGINYANU, AND H. FOIL . . . 3253-3257 GUIDANCE OF NEURONS ON POROUS
PATTERNED SILICON: IS PORE SIZE IMPORTANT? FREDRIK JOHANSSON, MARTIN
KANJE, CECILIA ERIKSSON, AND LARS WALLMAN 3258-3262 ELECTRONIC,
STRUCTURAL AND OPTICAL PROPERTIES OF HYDROGENATED SILICON NANOCRYSTALS:
THE ROLE OF THE EX- CITED STATES G. CANTELE, ELENA DEGOLI, ELEONORA
LUPPI, RITA MAGRI, D. NINNO, O. BISI, STEFANO OSSICINI, AND G. IADONISI
3263-3267 STIMULATED LIGHT EMISSION IN A DIELECTRICALLY DISORDERED
COMPOSITE POROUS MATRIX E. GROSS, N. KUNZNER, J. DIENER, MINORU FUJII,
V. YU. TIMOSHENKO, AND D. KOVALEV 3268-3272 STABLE ELECTROLUMINESCENCE
FROM PASSIVATED NANO-CRYSTALLINE POROUS SILICON USING UNDECYLENIC ACID
B. GELLOZ, H. SANO, R. BOUKHERROUB, D. D. M. WAYNER, D. J. LOCKWOOD, AND
N. KOSHIDA . . . 3273-3277 THERMAL TUNING OF SILICON-BASED
ONE-DIMENSIONAL PHOTONIC BANDGAP STRUCTURES S. M. WEISS AND P. M.
FAUCHET 3278-3282 TIME RESOLVED OPTICAL BLOCH OSCILLATIONS IN POROUS
SILICON SUPERLATTICE STRUCTURES MHER GHULINYAN, CLAUDIO J. OTON, ZENO
GABURRO, RICCARDO SAPIENZA, PAOLA COSTANTINO, DIEDERIK S. WIERSMA, AND
LORENZO PAVESI 3283-3287 DESIGN AND FABRICATION OF THE PERIODICAL
STRUCTURES BASED ON GROOVED SI FOR MIDDLE INFRARED MICRO- PHOTONICS V.
TOLMACHEV, E. ASTROVA, T. PEROVA, J. PILYUGINA, AND A. MOORE 3288-3292
ADSORPTION OF HUMAN SERUM ALBUMIN IN POROUS SILICON GRADIENTS MONITORED
BY SPATIALLY-RESOLVED SPEC- TROSCOPIC ELLIPSOMETRY L. M. KARLSSON, M.
SCHUBERT, N. ASHKENOV, AND H. ARWIN 3293-3297 PHASED ARRAY OPERATION OF
NANOCRYSTALLINE POROUS SILICON ULTRASONIC EMITTERS JUN HIROTA, AKIRA
KIUCHI, AND NOBUYOSHI KOSHIDA 3298-3302 GIANT NONLINEAR OPTICAL RESPONSE
APPLICATION FOR NANOPOROUS TITANIUM DIOXIDE PHOTOCATALYTIC ACTIVITY
MONITORING , V. GAYVORONSKY, V. TIMOSHENKO, M. BRODYN, A. GALAS, S. A.
NEPIJKO, TH. DITTRICH, F. KOCH, I. PETRIK, N. SMIRNOVA, A. EREMENKO, AND
M. KLIMENKOV 3303-3307 NANOSTRUCTURED POROUS SOL-GEL MATERIALS FOR
APPLICATIONS IN SOLAR CELLS ENGINEERING R. V. ZAKHARCHENKO, L. L.
DIAZ-FLORES, J. F. PEREZ-ROBLES, J. GONZALEZ-HERNANDEZ, AND Y. V.
VOROBIEV 3308-3313 MAGNETIC FIELD EFFECT ON THE VISIBLE
PHOTOLUMINESCENCE OF POROUS SILICON T. V. TORCHYNSKA, A. DIAZ CANO, L.
Y. KHOMENKOVA, V. N. ZAKHARCHENKO, R. V. ZAKHARCHENKO, J.
GONZALEZ-HERNANDEZ, AND Y. V. VOROBIEV 3314-3318 OPTICAL MODELS FOR THE
ELLIPSOMETRIC CHARACTERISATION OF POROUS SILICON STRUCTURES P. PETRIK,
E. VAZSONYI, M. FRIED, J. VOLK, G. T. ANDREWS, A. L. TOTH, CS. S.
DAROCZI, I. BARSONY, AND J. GYULAI 3319-3323 NANOSTRUCTURE SIZE
DETERMINATION IN P-TYPE POROUS SILICON BY THE USE OF TRANSMISSION
ELECTRON DIFFRAC- TION IMAGE PROCESSING A. RAMIREZ-PORRAS 3324-3328
CONTENTS 3181 POROUS-LIKE STRUCTURES PREPARED BY TEMPERATURE-PRESSURE
TREATMENT OF HEAVILY HYDROGENATED SILICON A. MISIUK, A. SHALIMOV, J.
BAK-MISIUK, B. SURMA, A. WNUK, I. V. ANTONOVA, V. G. ZAVODINSKY, AND A.
A. GNIDENKO 3329-3333 SPECIFIC DEPOSITION OF COPPER ONTO POROUS SILICON
D. HAMM, T. SAKKA, AND Y. H. OGATA 3334-3338 LARGE AREA ETCHING FOR
POROUS SEMICONDUCTORS J. CARSTENSEN, M. CHRISTOPHERSEN, S. LOLKES, E.
OSSEI-WUSU, J. BAHR, S. LANGA, G. POPKIROV, AND H. FOIL 3339-3343 ANODIC
PREPARATION OF POROUS TIO 2 IN FLUORIDE SOLUTION M. AGGOUR, TH.
DITTRICH, A. BELAIDI, I. SIEBER, AND J. RAPPICH 3344-3348 STRUCTURAL,
OPTICAL AND ELECTRICAL PROPERTIES OF POROUS SILICON IMPREGNATED WITH SNO
2 :SB H. ELHOUICHET, A. MOADHEN, M. OUESLATI, S. ROMDHANE, J. A. ROGER,
AND H. BOUCHRIHA . . . . 3349-3353 FORMATION ENERGIES OF SILICON
NANOCRYSTALS: ROLE OF DIMENSION AND PASSIVATION ELENA DEGOLI, STEFANO
OSSICINI, G. CANTELE, ELEONORA LUPPI, RITA MAGRI, D. NINNO, ANDO.BISI
3354-3358 ELECTROCHEMICAL STRUCTURING OF MECHANICALLY ACTIVATED
N-INP(LOO) SURFACES M. HUEPPE, U. SCHLIERF, R. GASSILOUD, J. MICHLER,
AND P. SCHMUKI 3359-3364 PHOTO-ELECTROCHEMICAL FORMATION OF POROUS GAP
P. C. RICCI, A. ANEDDA, C. M. CARBONARO, D. CHIRIU, F. CLEMENTE, AND R.
CORPINO 3365-3369 POROUS SILICA COMPOSITE MATERIAL FOR NON-LINEAR
OPTICAL PROPERTIES: CHARACTERISATION BY SPECTROSCOPIC ELLIPSOMETRY AND
SECOND HARMONIC GENERATION M. GUENDOUZ, M. BEN SALAH, S. RIVET, B. LE
JEUNE, G. LE BRUN, M. GAILLET, AND C. MARCHAND . 3370-3374
PHOTOLUMINESCENCE AND AFM CHARACTERISATION OF PHOTOCHEMICALLY ETCHED
HIGHLY RESISTIVE N-TYPE SILI- CON T. HADJERSI, E.S. KOOIJ, N. YAMAMOTO,
K. SAKAMAKI, H. TAKAI, AND N. GABOUZE 3375-3378 EFFECTS OF TREATMENT
TEMPERATURE ON THERMALLY-CARBONIZED POROUS SILICON HYGROSCOPICITY J.
PASKI, M. BJORKQVIST, J. SALONEN, AND V-P. LEHTO 3379-3383
PHOTOLUMINESCENCE FROM UNDOPED SILICON AFTER CHEMICAL ETCHING COMBINED
WITH METAL PLATING T. HADJERSI, N. GABOUZE, N. YAMAMOTO, K. SAKAMAKI, H.
TAKAI, A. ABABOU, AND E.S. KOOIJ . . 3384-3388 DEPENDENCE OF SELECTIVE
ANODIZATION CHARACTERISTICS ON SILICON SUBSTRATE ORIENTATION S. UEHARA,
K. KUBOTA, K. NAGAOKA, S. YOSHIDA, AND T. MATSUBARA 3389-3393 RANDOM
MACROPORE FORMATION IN N-TYPE SILICON UNDER FRONT SIDE ILLUMINATION:
CORRELATION WITH ANISOT- ROPIC ETCHING R. OUTEMZABET, N. GABOUZE, N.
KESRI, AND H. CHERAGA 3394-3398 PROCESSING OF INFRARED SPECTRA FROM
POROUS SILICON USING AUTOMATIC ALGORITHM PROSPECT-2 V. PARKHUTIK, YU.
MAKUSHOK, C. H. LAU, M. TOTOLICI, R. SAFFIE, AND L. T. CANHAM 3399-3403
STRONG ANISOTROPY OF LATERAL ELECTRICAL TRANSPORT IN (110) POROUS
SILICON FILMS P. FORSH, D. ZHIGUNOV, L. OSMINKINA, V. TIMOSHENKO, AND P.
KASHKAROV 3404-3408 STRUCTURAL AND LUMINESCENCE PROPERTIES OF
VAPOUR-ETCHED POROUS SILICON AND RELATED COMPOUNDS S. AOUIDA, M.
SAADOUN, K. BEN SAAD, AND B. BESSAIS 3409-3413 OPTICAL INVESTIGATIONS ON
THERMAL CONDUCTIVITY IN N- AND P-TYPE POROUS SILICON S. LETTIERI, U.
BERNINI, E. MASSERA, AND P. MADDALENA 3414-3418 3182 CONTENTS INFLUENCE
OF AMBIENT CONDITIONS ON SURFACE TRAPS IN NANOPOROUS ANATASE O.
LOGINENKO, H. PORTEANU, V. GAYVORONSKY, I. PETRIK, N. SMIRNOVA, A.
EREMENKO, AND F.KOCH 3419-3423 GAS SENSORS BASED ON SILICON DEVICES WITH
A POROUS LAYER G. BARILLARO, A. DILIGENTI, A. NANNINI, AND L. M.
STRAMBINI 3424-3428 STIMULATED EMISSION IN THE ACTIVE PLANAR OPTICAL
WAVEGUIDE MADE OF SILICON NANOCRYSTALS K. LUTEROVA, D. NAVARRO, M.
CAZZANELLI, T. OSTATNICKY, J. VALENTA, S. CHEYLAN, I. PELANT,
ANDL.PAVESI 3429-3434 TIGHT BINDING CALCULATIONS FOR THE OPTICAL
PROPERTIES OF ELLIPSOIDAL SILICON NANOCRYSTALS F. TRANI, G. CANTELE, D.
NINNO, AND G. IADONISI 3435-3439 THE ROLE OF RADIATIVE AND NONRADIATIVE
RELAXATION PROCESSES IN THE GENERATION OF LIGHT FROM SILICON
NANOCRYSTALS M. DOVRAT, Y. GOSHEN, I. POPOV, J. JEDRZEJEWSKI, I.
BALBERG, AND A. SA AR 3440-3444 SELECTIVE DISSOLUTION OF SILICON IN
POROUS AMORPHOUS SI^C^H K. RERBAL, F. JOMARD, J.-N. CHAZALVIEL, AND F.
OZANAM 3445-3448 CH X - POROUS SILICON STRUCTURES FOR GAS SENSING
APPLICATIONS N. GABOUZE, S. BELHOUSSE, AND H. CHERAGA 3449-3452 OXIDISED
POROUS SILICON/DISPERSE RED 1 COMPOSITE MATERIAL: FABRICATION AND
MICRO-RAMAN SPECTROMETRY ANALYSIS M. GUENDOUZ, M. KLOUL, S. HAESAERT, P.
JOUBERT, J-F. BARDEAU, AND A. BULOU 3453-3456 HIGHLY EFFICIENT TO
HYDROGEN PERMEABILITY PALLADIUM MEMBRANES SUPPORTED IN POROUS SILICON V.
STARKOV, A. VYATKIN, V. VOLKOV, H. PRESTING, J. KONLE, AND U. KONIG
3457-3460 ANISOTROPY OF INFRARED ABSORPTION IN (110) POROUS SILICON
LAYERS V. YU. TIMOSHENKO, L. A. OSMINKINA, A. I. EFIMOVA, M. A. FOMENKO,
L. A. GOLOVAN, P. K. KASHKAROV, D. KOVALEV, N. KIINZNER, E. GROSS, J.
DIENER, AND F. KOCH 3461-3465 ONE-DIMENSIONAL POROUS SILICON PHOTONIC
CRYSTALS FOR VISIBLE AND NIR APPLICATIONS E. XIFRE PEREZ, T. TRIFONOV,
J. PALLARES, AND L. F. MARSAL 3466-3470 SYNCHROTRON TOPOGRAPHIC AND
PHOTOLUMINESCENCE INVESTIGATIONS OF POROUS LAYER IN HT-HP TREATED
SILICON IMPLANTED WITH DEUTERIUM IONS K. WIETESKA, W. WIERZCHOWSKI, A.
MISIUK, B. SURMA, W. GRAEFF, I.V. ANTONOVA, AND M. PRUJSZCZYK 3471-3475
POROUS SILICON FORMATION BY HF CHEMICAL ETCHING FOR ANTIREFLECTION OF
SOLAR CELLS SHINJI YAE, HIROYUKI TANAKA, TSUTOMU KOBAYASHI, NAOKI
FUKUMURO, AND HITOSHI MATSUDA . . 3476-3480 PHOTOLUMINESCENCE QUENCHING
OF POROUS SILICON IN GAS AND LIQUID PHASES - THE ROLE OF DIELECTRIC
QUEN- CHING AND CAPILLARY CONDENSATION EFFECTS JURAJ DIAN, TOMAS
CHVOJKA, VLADIMIR VRKOSLAV, AND IVAN JELINEK 3481-3485 GETTERING
IMPURITIES FROM CRYSTALLINE SILICON BY ALUMINUM DIFFUSION USING A POROUS
SILICON LAYER N. KHEDHER, M. HAJJI, B. BESSAIS, H. EZZAOUIA, A. SELMI,
AND R. BENNACEUR 3486-3490 STRUCTURAL AND OPTICAL PROPERTIES OF POROUS
GALLIUM ARSENIDE A. I. BELOGOROKHOV, S. A. GAVRILOV, AND I. A.
BELOGOROKHOV 3491-3494 OPTICAL STUDY OF EQUILIBRIUM CHARGE CARRIERS IN
MESOPOROUS SILICON A. V. PAVLIKOV, L. A. OSMINKINA, E. A. KONSTANTINOVA,
A. I. EFIMOVA, E. V. KUREPINA, V. YU. TIMOSHENKO, AND P. K. KASHKAROV
3495-3499 CONTENTS 3183 MODELING RAMAN SCATTERING IN POROUS SILICON
MIGUEL CRUZ AND CHUMIN WANG 3500-3504 CHEMICAL VAPOUR ETCHING-BASED
POROUS SILICON AND GROOVING: APPLICATION IN SILICON SOLAR CELLS PROCESS-
ING M. BEN RABHA, M. F. BOUJMIL, M. SAADOUN, AND B. BESSAIS 3505-3509
PHYSICA STATUS SOLIDI (C) IS INDEXED IN CAMBRIDGE SCIENTIFIC ABSTRACTS;
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| adam_txt |
CONFERENCES AND CRITICAL REVIEWS EDITOR-IN-CHIEF MARTIN STUTZMANN WALTER
SCHOTTKY INSTITUT, TECHNISCHE UNIVERSITAT MUNCHEN, AM COULOMBWALL, 85748
GARCHING, GERMANY FAX: +49 (0) 89/28 91-27 37; E-MAIL: STUTZ@WSI.TUM.DE
REGIONAL EDITORS MARTIN S. BRANDT WALTER-SCHOTTKY-LNSTITUT, TECHNISCHE
UNIVERSITAT MUNCHEN, AM COULOMBWALL, 85748 GARCHING, GERMANY FAX:+49
(0)89/28 91-27 37; E-MAIL: MBRANDT@PHYSIK.TU-MUENCHEN.DE SHUIT-TONG LEE
CENTRE OF SUPER-DIAMOND AND ADVANCED FILMS (COSDAF) AND DEPARTMENT OF
PHYSICS AND MATERIALS SCIENCE CITY UNIVERSITY OF HONG KONG, 83 TAT CHEE
AVENUE, KOWLOON, HONG KONG SAR FAX: +8 52/27 84 46 96; E-MAIL:
APANNALE@CITYU.EDU.HK PABLO ORDEJON INSTITUT DE CIENCIA DE MATERIALS DE
BARCELONA - CSIC CAMPUS DE LA U.A.B., 08193 BELLATERRA, BARCELONA, SPAIN
FAX: +34 93/5 80 57 29; E-MAIL: ORDEJON@ICMAB.ES MICHAEL SHUR
ELECTRICAL, COMPUTER, AND SYSTEMS ENGINEERING DEPARTMENT AND PHYSICS
DEPARTMENT, RENSSELAER POLYTECHNIC INSTITUTE, 110 8TH STREET, TROY, NY
12180, USA FAX: +1 (518) 276 2990; E-MAIL: SHURM@RPI.EDU JOHN I. B.
WILSON DEPARTMENT OF PHYSICS, HERIOT WATT UNIVERSITY, RICCARTON,
EDINBURGH EH14 4AS, UK FAX: +44 (0) 1 31/4 51 31 36; E-MAIL:
J.I.B.WILSON@HW.AC.UK 2 9 2005 )WILEY-VCH MANAGING EDITOR STEFAN
HILDEBRANDT EDITORIAL OFFICE, WILEY-VCH VERLAG GMBH & CO. KGAA,
BUHRINGSTRAFLE 10, 13086 BERLIN, GERMANY FAX: +49 (0) 30/47 03 13 34;
E-MAIL: PSS@WILEY-VCH.DE TIB/UB HANNOVER 89 126 534 152 CONTENTS FULL
TEXT ON OUR HOMEPAGE AT: HTTP://WWW.PSS-C.COM PAPERS PRESENTED AT THE
4TH INTERNATIONAL CONFERENCE ON POROUS SEMICONDUCTORS - SCIENCE AND
TECHNOLOGY (PSST-2004) CULLERA (VALENCIA), SPAIN, 14-19 MARCH 2004
ORIGINAL PAPERS HISTORICAL PERSPECTIVE ON THE DISCOVERY OF POROUS
SILICON ARTHUR UHLIR JR. AND INGEBORG (WILLIAMS) UHLIR 3185-3187
PHOTOLUMINESCENCE FATIGUE EFFECT IN LUMINESCENT POROUS SILICON INDUCED
BY PHOTOSENSITIZED MOLECULAR OXYGEN D. KOVALEV, E. GROSS, J. DIENER, V.
TIMOSHENKO, AND M. FUJII 3188-3192 CARRIERS REACTIVATION IN P*-TYPE
POROUS SILICON ACCOMPANIES HYDROGEN DESORPTION P. RIVOLO, F. GEOBALDO,
G. P. SALVADOR, L. PALLAVIDINO, P. UGLIENGO, AND E. GARRONE 3193-3197
FABRICATION OF REGULAR SILICON MICROSTRUCTURES BY PHOTO-ELECTROCHEMICAL
ETCHING OF SILICON G. BARILLARO, P. BRUSCHI, A. DILIGENTI, AND A.
NANNINI 3198-3202 STRESS EFFECTS IN MESO-POROUS SILICON NANOSTRUCTURES
V. LYSENKO, C. POPULAIRE, B. REMAKI, B. CHAMPAGNON, H. ARTMANN, T.
PANNEK, ANDD. BARBIER 3203-3207 POROSITY PROFILE DETERMINATION OF POROUS
SILICON INTERFERENCE FILTERS BY RBS V. TORRES-COSTA, F. PASZTI, A.
CLIMENT-FONT, R. J. MARTIN-PALMA, AND J. M. MARTINEZ-DUART. . .
3208-3212 SILICA MICRO TUBES FORMED DURING THE PATTERNING OF OXIDIZED
MACROPOROUS SILICON E. V. ASTROVA, T. N. BOROVINSKAYA, T. PEROVA, AND M.
V. ZAMORYANSKAYA 3213-3217 NANOCOMPOSITES OBTAINED BY EMBEDDING OF
CONJUGATED POLYMERS IN POROUS SILICON AND SILICA N. ERRIEN, L.
VELLUTINI, G. FROYER, G. LOUARN, C. SIMOS, V. SKARKA, S. HAESAERT, AND
P. JOUBERT 3218-3221 NON-LINEAR OPTICAL PROPERTIES OF POLY(PHENYLENE
VINYLENE) IN POROUS SILICON SUBSTRATES T. P. NGUYEN, P. LE RENDU, C.
SIMOS, P. X. NGUYEN, V. SKARKA, M. DE KOK, K. W. CHEAH, M. GUENDOUZ, AND
P. JOUBERT 3222-3226 FABRICATION AND OPTIMIZATION OF RUGATE FILTERS
BASED ON POROUS SILICON E. LORENZO, C. J. OTON, N. E. CAPUJ, M.
GHULINYAN, D. NAVARRO-URRIOS, Z. GABURRO, ANDL. PAVESI 3227-3231
MEASUREMENT OF THE THIRD ORDER NONLINEAR PROPERTIES OF CONJUGATED
POLYMERS EMBEDDED IN POROUS SILICON AND SILICA C. SIMOS, L. RODRIGUEZ,
V. SKARKA, X. NGUYEN PHU, N. ERRIEN, G. FROYER, T. P. NGUYEN, P. LE
RENDU, AND P. PIRASTESH 3232-3236 NUCLEATION AND GROWTH OF MACRO PORES
ON (100) N-TYPE GE S. LANGA, J. CARSTENSEN, I. M. TIGINYANU, AND H. FOIL
3237-3242 FORMATION OF POROUS GE USING HF-BASED ELECTROLYTES GIOVANNI
FLAMAND, JEF POORTMANS, AND KRISTOF DESSEIN 3243-3247 3180 CONTENTS
POROUS GALLIUM PHOSPHIDE: CHALLENGING MATERIAL FOR NONLINEAR-OPTICAL
APPLICATIONS V. A. MELNIKOV, L. A. GOLOVAN, S. O. KONOROV, A. B.
FEDOTOV, G. I. PETROV, L. LI, V. V. YAKOVLEV, S. A. GAVRILOV, A. M.
ZHELTIKOV, V. YU. TIMOSHENKO, AND P. K. KASHKAROV . . 3248-3252
ENGINEERING THE MORPHOLOGY OF POROUS INP FOR WAVEGUIDE APPLICATIONS S.
LANGA, S. LOLKES, J. CARSTENSEN, M. HERMANN, G. BOTTGER, I. M.
TIGINYANU, AND H. FOIL . . . 3253-3257 GUIDANCE OF NEURONS ON POROUS
PATTERNED SILICON: IS PORE SIZE IMPORTANT? FREDRIK JOHANSSON, MARTIN
KANJE, CECILIA ERIKSSON, AND LARS WALLMAN 3258-3262 ELECTRONIC,
STRUCTURAL AND OPTICAL PROPERTIES OF HYDROGENATED SILICON NANOCRYSTALS:
THE ROLE OF THE EX- CITED STATES G. CANTELE, ELENA DEGOLI, ELEONORA
LUPPI, RITA MAGRI, D. NINNO, O. BISI, STEFANO OSSICINI, AND G. IADONISI
3263-3267 STIMULATED LIGHT EMISSION IN A DIELECTRICALLY DISORDERED
COMPOSITE POROUS MATRIX E. GROSS, N. KUNZNER, J. DIENER, MINORU FUJII,
V. YU. TIMOSHENKO, AND D. KOVALEV 3268-3272 STABLE ELECTROLUMINESCENCE
FROM PASSIVATED NANO-CRYSTALLINE POROUS SILICON USING UNDECYLENIC ACID
B. GELLOZ, H. SANO, R. BOUKHERROUB, D. D. M. WAYNER, D. J. LOCKWOOD, AND
N. KOSHIDA . . . 3273-3277 THERMAL TUNING OF SILICON-BASED
ONE-DIMENSIONAL PHOTONIC BANDGAP STRUCTURES S. M. WEISS AND P. M.
FAUCHET 3278-3282 TIME RESOLVED OPTICAL BLOCH OSCILLATIONS IN POROUS
SILICON SUPERLATTICE STRUCTURES MHER GHULINYAN, CLAUDIO J. OTON, ZENO
GABURRO, RICCARDO SAPIENZA, PAOLA COSTANTINO, DIEDERIK S. WIERSMA, AND
LORENZO PAVESI 3283-3287 DESIGN AND FABRICATION OF THE PERIODICAL
STRUCTURES BASED ON GROOVED SI FOR MIDDLE INFRARED MICRO- PHOTONICS V.
TOLMACHEV, E. ASTROVA, T. PEROVA, J. PILYUGINA, AND A. MOORE 3288-3292
ADSORPTION OF HUMAN SERUM ALBUMIN IN POROUS SILICON GRADIENTS MONITORED
BY SPATIALLY-RESOLVED SPEC- TROSCOPIC ELLIPSOMETRY L. M. KARLSSON, M.
SCHUBERT, N. ASHKENOV, AND H. ARWIN 3293-3297 PHASED ARRAY OPERATION OF
NANOCRYSTALLINE POROUS SILICON ULTRASONIC EMITTERS JUN HIROTA, AKIRA
KIUCHI, AND NOBUYOSHI KOSHIDA 3298-3302 GIANT NONLINEAR OPTICAL RESPONSE
APPLICATION FOR NANOPOROUS TITANIUM DIOXIDE PHOTOCATALYTIC ACTIVITY
MONITORING , V. GAYVORONSKY, V. TIMOSHENKO, M. BRODYN, A. GALAS, S. A.
NEPIJKO, TH. DITTRICH, F. KOCH, I. PETRIK, N. SMIRNOVA, A. EREMENKO, AND
M. KLIMENKOV 3303-3307 NANOSTRUCTURED POROUS SOL-GEL MATERIALS FOR
APPLICATIONS IN SOLAR CELLS ENGINEERING R. V. ZAKHARCHENKO, L. L.
DIAZ-FLORES, J. F. PEREZ-ROBLES, J. GONZALEZ-HERNANDEZ, AND Y. V.
VOROBIEV 3308-3313 MAGNETIC FIELD EFFECT ON THE VISIBLE
PHOTOLUMINESCENCE OF POROUS SILICON T. V. TORCHYNSKA, A. DIAZ CANO, L.
Y. KHOMENKOVA, V. N. ZAKHARCHENKO, R. V. ZAKHARCHENKO, J.
GONZALEZ-HERNANDEZ, AND Y. V. VOROBIEV 3314-3318 OPTICAL MODELS FOR THE
ELLIPSOMETRIC CHARACTERISATION OF POROUS SILICON STRUCTURES P. PETRIK,
E. VAZSONYI, M. FRIED, J. VOLK, G. T. ANDREWS, A. L. TOTH, CS. S.
DAROCZI, I. BARSONY, AND J. GYULAI 3319-3323 NANOSTRUCTURE SIZE
DETERMINATION IN P-TYPE POROUS SILICON BY THE USE OF TRANSMISSION
ELECTRON DIFFRAC- TION IMAGE PROCESSING A. RAMIREZ-PORRAS 3324-3328
CONTENTS 3181 POROUS-LIKE STRUCTURES PREPARED BY TEMPERATURE-PRESSURE
TREATMENT OF HEAVILY HYDROGENATED SILICON A. MISIUK, A. SHALIMOV, J.
BAK-MISIUK, B. SURMA, A. WNUK, I. V. ANTONOVA, V. G. ZAVODINSKY, AND A.
A. GNIDENKO 3329-3333 SPECIFIC DEPOSITION OF COPPER ONTO POROUS SILICON
D. HAMM, T. SAKKA, AND Y. H. OGATA 3334-3338 LARGE AREA ETCHING FOR
POROUS SEMICONDUCTORS J. CARSTENSEN, M. CHRISTOPHERSEN, S. LOLKES, E.
OSSEI-WUSU, J. BAHR, S. LANGA, G. POPKIROV, AND H. FOIL 3339-3343 ANODIC
PREPARATION OF POROUS TIO 2 IN FLUORIDE SOLUTION M. AGGOUR, TH.
DITTRICH, A. BELAIDI, I. SIEBER, AND J. RAPPICH 3344-3348 STRUCTURAL,
OPTICAL AND ELECTRICAL PROPERTIES OF POROUS SILICON IMPREGNATED WITH SNO
2 :SB H. ELHOUICHET, A. MOADHEN, M. OUESLATI, S. ROMDHANE, J. A. ROGER,
AND H. BOUCHRIHA . . . . 3349-3353 FORMATION ENERGIES OF SILICON
NANOCRYSTALS: ROLE OF DIMENSION AND PASSIVATION ELENA DEGOLI, STEFANO
OSSICINI, G. CANTELE, ELEONORA LUPPI, RITA MAGRI, D. NINNO, ANDO.BISI
3354-3358 ELECTROCHEMICAL STRUCTURING OF MECHANICALLY ACTIVATED
N-INP(LOO) SURFACES M. HUEPPE, U. SCHLIERF, R. GASSILOUD, J. MICHLER,
AND P. SCHMUKI 3359-3364 PHOTO-ELECTROCHEMICAL FORMATION OF POROUS GAP
P. C. RICCI, A. ANEDDA, C. M. CARBONARO, D. CHIRIU, F. CLEMENTE, AND R.
CORPINO 3365-3369 POROUS SILICA COMPOSITE MATERIAL FOR NON-LINEAR
OPTICAL PROPERTIES: CHARACTERISATION BY SPECTROSCOPIC ELLIPSOMETRY AND
SECOND HARMONIC GENERATION M. GUENDOUZ, M. BEN SALAH, S. RIVET, B. LE
JEUNE, G. LE BRUN, M. GAILLET, AND C. MARCHAND . 3370-3374
PHOTOLUMINESCENCE AND AFM CHARACTERISATION OF PHOTOCHEMICALLY ETCHED
HIGHLY RESISTIVE N-TYPE SILI- CON T. HADJERSI, E.S. KOOIJ, N. YAMAMOTO,
K. SAKAMAKI, H. TAKAI, AND N. GABOUZE 3375-3378 EFFECTS OF TREATMENT
TEMPERATURE ON THERMALLY-CARBONIZED POROUS SILICON HYGROSCOPICITY J.
PASKI, M. BJORKQVIST, J. SALONEN, AND V-P. LEHTO 3379-3383
PHOTOLUMINESCENCE FROM UNDOPED SILICON AFTER CHEMICAL ETCHING COMBINED
WITH METAL PLATING T. HADJERSI, N. GABOUZE, N. YAMAMOTO, K. SAKAMAKI, H.
TAKAI, A. ABABOU, AND E.S. KOOIJ . . 3384-3388 DEPENDENCE OF SELECTIVE
ANODIZATION CHARACTERISTICS ON SILICON SUBSTRATE ORIENTATION S. UEHARA,
K. KUBOTA, K. NAGAOKA, S. YOSHIDA, AND T. MATSUBARA 3389-3393 RANDOM
MACROPORE FORMATION IN N-TYPE SILICON UNDER FRONT SIDE ILLUMINATION:
CORRELATION WITH ANISOT- ROPIC ETCHING R. OUTEMZABET, N. GABOUZE, N.
KESRI, AND H. CHERAGA 3394-3398 PROCESSING OF INFRARED SPECTRA FROM
POROUS SILICON USING AUTOMATIC ALGORITHM "PROSPECT-2" V. PARKHUTIK, YU.
MAKUSHOK, C. H. LAU, M. TOTOLICI, R. SAFFIE, AND L. T. CANHAM 3399-3403
STRONG ANISOTROPY OF LATERAL ELECTRICAL TRANSPORT IN (110) POROUS
SILICON FILMS P. FORSH, D. ZHIGUNOV, L. OSMINKINA, V. TIMOSHENKO, AND P.
KASHKAROV 3404-3408 STRUCTURAL AND LUMINESCENCE PROPERTIES OF
VAPOUR-ETCHED POROUS SILICON AND RELATED COMPOUNDS S. AOUIDA, M.
SAADOUN, K. BEN SAAD, AND B. BESSAIS 3409-3413 OPTICAL INVESTIGATIONS ON
THERMAL CONDUCTIVITY IN N- AND P-TYPE POROUS SILICON S. LETTIERI, U.
BERNINI, E. MASSERA, AND P. MADDALENA 3414-3418 3182 CONTENTS INFLUENCE
OF AMBIENT CONDITIONS ON SURFACE TRAPS IN NANOPOROUS ANATASE O.
LOGINENKO, H. PORTEANU, V. GAYVORONSKY, I. PETRIK, N. SMIRNOVA, A.
EREMENKO, AND F.KOCH 3419-3423 GAS SENSORS BASED ON SILICON DEVICES WITH
A POROUS LAYER G. BARILLARO, A. DILIGENTI, A. NANNINI, AND L. M.
STRAMBINI 3424-3428 STIMULATED EMISSION IN THE ACTIVE PLANAR OPTICAL
WAVEGUIDE MADE OF SILICON NANOCRYSTALS K. LUTEROVA, D. NAVARRO, M.
CAZZANELLI, T. OSTATNICKY, J. VALENTA, S. CHEYLAN, I. PELANT,
ANDL.PAVESI 3429-3434 TIGHT BINDING CALCULATIONS FOR THE OPTICAL
PROPERTIES OF ELLIPSOIDAL SILICON NANOCRYSTALS F. TRANI, G. CANTELE, D.
NINNO, AND G. IADONISI 3435-3439 THE ROLE OF RADIATIVE AND NONRADIATIVE
RELAXATION PROCESSES IN THE GENERATION OF LIGHT FROM SILICON
NANOCRYSTALS M. DOVRAT, Y. GOSHEN, I. POPOV, J. JEDRZEJEWSKI, I.
BALBERG, AND A. SA'AR 3440-3444 SELECTIVE DISSOLUTION OF SILICON IN
POROUS AMORPHOUS SI^C^H K. RERBAL, F. JOMARD, J.-N. CHAZALVIEL, AND F.
OZANAM 3445-3448 CH X - POROUS SILICON STRUCTURES FOR GAS SENSING
APPLICATIONS N. GABOUZE, S. BELHOUSSE, AND H. CHERAGA 3449-3452 OXIDISED
POROUS SILICON/DISPERSE RED 1 COMPOSITE MATERIAL: FABRICATION AND
MICRO-RAMAN SPECTROMETRY ANALYSIS M. GUENDOUZ, M. KLOUL, S. HAESAERT, P.
JOUBERT, J-F. BARDEAU, AND A. BULOU 3453-3456 HIGHLY EFFICIENT TO
HYDROGEN PERMEABILITY PALLADIUM MEMBRANES SUPPORTED IN POROUS SILICON V.
STARKOV, A. VYATKIN, V. VOLKOV, H. PRESTING, J. KONLE, AND U. KONIG
3457-3460 ANISOTROPY OF INFRARED ABSORPTION IN (110) POROUS SILICON
LAYERS V. YU. TIMOSHENKO, L. A. OSMINKINA, A. I. EFIMOVA, M. A. FOMENKO,
L. A. GOLOVAN, P. K. KASHKAROV, D. KOVALEV, N. KIINZNER, E. GROSS, J.
DIENER, AND F. KOCH 3461-3465 ONE-DIMENSIONAL POROUS SILICON PHOTONIC
CRYSTALS FOR VISIBLE AND NIR APPLICATIONS E. XIFRE PEREZ, T. TRIFONOV,
J. PALLARES, AND L. F. MARSAL 3466-3470 SYNCHROTRON TOPOGRAPHIC AND
PHOTOLUMINESCENCE INVESTIGATIONS OF POROUS LAYER IN HT-HP TREATED
SILICON IMPLANTED WITH DEUTERIUM IONS K. WIETESKA, W. WIERZCHOWSKI, A.
MISIUK, B. SURMA, W. GRAEFF, I.V. ANTONOVA, AND M. PRUJSZCZYK 3471-3475
POROUS SILICON FORMATION BY HF CHEMICAL ETCHING FOR ANTIREFLECTION OF
SOLAR CELLS SHINJI YAE, HIROYUKI TANAKA, TSUTOMU KOBAYASHI, NAOKI
FUKUMURO, AND HITOSHI MATSUDA . . 3476-3480 PHOTOLUMINESCENCE QUENCHING
OF POROUS SILICON IN GAS AND LIQUID PHASES - THE ROLE OF DIELECTRIC
QUEN- CHING AND CAPILLARY CONDENSATION EFFECTS JURAJ DIAN, TOMAS
CHVOJKA, VLADIMIR VRKOSLAV, AND IVAN JELINEK 3481-3485 GETTERING
IMPURITIES FROM CRYSTALLINE SILICON BY ALUMINUM DIFFUSION USING A POROUS
SILICON LAYER N. KHEDHER, M. HAJJI, B. BESSAIS, H. EZZAOUIA, A. SELMI,
AND R. BENNACEUR 3486-3490 STRUCTURAL AND OPTICAL PROPERTIES OF POROUS
GALLIUM ARSENIDE A. I. BELOGOROKHOV, S. A. GAVRILOV, AND I. A.
BELOGOROKHOV 3491-3494 OPTICAL STUDY OF EQUILIBRIUM CHARGE CARRIERS IN
MESOPOROUS SILICON A. V. PAVLIKOV, L. A. OSMINKINA, E. A. KONSTANTINOVA,
A. I. EFIMOVA, E. V. KUREPINA, V. YU. TIMOSHENKO, AND P. K. KASHKAROV
3495-3499 CONTENTS 3183 MODELING RAMAN SCATTERING IN POROUS SILICON
MIGUEL CRUZ AND CHUMIN WANG 3500-3504 CHEMICAL VAPOUR ETCHING-BASED
POROUS SILICON AND GROOVING: APPLICATION IN SILICON SOLAR CELLS PROCESS-
ING M. BEN RABHA, M. F. BOUJMIL, M. SAADOUN, AND B. BESSAIS 3505-3509
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| spelling | International Conference on Porous Semiconductors - Science and Technology 4 2004 Cullera Verfasser (DE-588)6042919-7 aut Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) Cullera (Valencia), Spain, 14 - 19 March 2004 Wiley-VCH 2005 S. 3185 - 3509 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben. - In: Physica status solidi : C, Conferences and critical reviews ; 2 (2005),9 Semicondutores (congressos) larpcal Porous silicon Congresses Semiconductors Congresses (DE-588)1071861417 Konferenzschrift gnd-content GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015210998&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) Cullera (Valencia), Spain, 14 - 19 March 2004 Semicondutores (congressos) larpcal Porous silicon Congresses Semiconductors Congresses |
| subject_GND | (DE-588)1071861417 |
| title | Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) Cullera (Valencia), Spain, 14 - 19 March 2004 |
| title_auth | Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) Cullera (Valencia), Spain, 14 - 19 March 2004 |
| title_exact_search | Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) Cullera (Valencia), Spain, 14 - 19 March 2004 |
| title_exact_search_txtP | Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) Cullera (Valencia), Spain, 14 - 19 March 2004 |
| title_full | Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) Cullera (Valencia), Spain, 14 - 19 March 2004 |
| title_fullStr | Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) Cullera (Valencia), Spain, 14 - 19 March 2004 |
| title_full_unstemmed | Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) Cullera (Valencia), Spain, 14 - 19 March 2004 |
| title_short | Papers presented at the 4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004) |
| title_sort | papers presented at the 4th international conference on porous semiconductors science and technology psst 2004 cullera valencia spain 14 19 march 2004 |
| title_sub | Cullera (Valencia), Spain, 14 - 19 March 2004 |
| topic | Semicondutores (congressos) larpcal Porous silicon Congresses Semiconductors Congresses |
| topic_facet | Semicondutores (congressos) Porous silicon Congresses Semiconductors Congresses Konferenzschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=015210998&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT internationalconferenceonporoussemiconductorsscienceandtechnologycullera paperspresentedatthe4thinternationalconferenceonporoussemiconductorsscienceandtechnologypsst2004culleravalenciaspain1419march2004 |