Special issue on III-V nitrides and silicon carbide: [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ]
Gespeichert in:
| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Warrendale, PA
TMS
2001
|
| Schlagworte: | |
| Beschreibung: | Literaturangaben. - In: Journal of electronic materials ; 30 (2001),3 |
| Beschreibung: | S. 109 - 282 Ill., graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV021965973 | ||
| 003 | DE-604 | ||
| 005 | 20040302000000.0 | ||
| 007 | t | ||
| 008 | 020723s2001 ad|| |||| 10||| eng d | ||
| 035 | |a (OCoLC)633949594 | ||
| 035 | |a (DE-599)BVBBV021965973 | ||
| 040 | |a DE-604 |b ger | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-706 | ||
| 245 | 1 | 0 | |a Special issue on III-V nitrides and silicon carbide |b [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ] |
| 264 | 1 | |a Warrendale, PA |b TMS |c 2001 | |
| 300 | |a S. 109 - 282 |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Literaturangaben. - In: Journal of electronic materials ; 30 (2001),3 | ||
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nitride |0 (DE-588)4171929-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumcarbid |0 (DE-588)4055009-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kohlenstoff |0 (DE-588)4164538-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Siliciumcarbid |0 (DE-588)4055009-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
| 689 | 2 | |5 DE-604 | |
| 689 | 3 | 0 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
| 689 | 3 | |5 DE-604 | |
| 689 | 4 | 0 | |a Kohlenstoff |0 (DE-588)4164538-8 |D s |
| 689 | 4 | |5 DE-604 | |
| 689 | 5 | 0 | |a Nitride |0 (DE-588)4171929-3 |D s |
| 689 | 5 | |5 DE-604 | |
| 711 | 2 | |a Electronic Materials Conference |n 42 |d 2000 |c Denver, Colo. |j Sonstige |0 (DE-588)6029205-2 |4 oth | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-015181123 | ||
Datensatz im Suchindex
| _version_ | 1804135935309250560 |
|---|---|
| adam_txt | |
| any_adam_object | |
| any_adam_object_boolean | |
| building | Verbundindex |
| bvnumber | BV021965973 |
| ctrlnum | (OCoLC)633949594 (DE-599)BVBBV021965973 |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01780nam a2200481zc 4500</leader><controlfield tag="001">BV021965973</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20040302000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">020723s2001 ad|| |||| 10||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)633949594</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV021965973</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-706</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Special issue on III-V nitrides and silicon carbide</subfield><subfield code="b">[ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ]</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Warrendale, PA</subfield><subfield code="b">TMS</subfield><subfield code="c">2001</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">S. 109 - 282</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben. - In: Journal of electronic materials ; 30 (2001),3</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nitride</subfield><subfield code="0">(DE-588)4171929-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kohlenstoff</subfield><subfield code="0">(DE-588)4164538-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">Kohlenstoff</subfield><subfield code="0">(DE-588)4164538-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="5" ind2="0"><subfield code="a">Nitride</subfield><subfield code="0">(DE-588)4171929-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="5" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">Electronic Materials Conference</subfield><subfield code="n">42</subfield><subfield code="d">2000</subfield><subfield code="c">Denver, Colo.</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)6029205-2</subfield><subfield code="4">oth</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-015181123</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift gnd-content |
| genre_facet | Konferenzschrift |
| id | DE-604.BV021965973 |
| illustrated | Illustrated |
| index_date | 2024-07-02T16:08:54Z |
| indexdate | 2024-07-09T20:48:24Z |
| institution | BVB |
| institution_GND | (DE-588)6029205-2 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-015181123 |
| oclc_num | 633949594 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | S. 109 - 282 Ill., graph. Darst. |
| publishDate | 2001 |
| publishDateSearch | 2001 |
| publishDateSort | 2001 |
| publisher | TMS |
| record_format | marc |
| spelling | Special issue on III-V nitrides and silicon carbide [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ] Warrendale, PA TMS 2001 S. 109 - 282 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben. - In: Journal of electronic materials ; 30 (2001),3 Silicium (DE-588)4077445-4 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Kohlenstoff (DE-588)4164538-8 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s DE-604 Silicium (DE-588)4077445-4 s Halbleiterphysik (DE-588)4113829-6 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s Kohlenstoff (DE-588)4164538-8 s Nitride (DE-588)4171929-3 s Electronic Materials Conference 42 2000 Denver, Colo. Sonstige (DE-588)6029205-2 oth |
| spellingShingle | Special issue on III-V nitrides and silicon carbide [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ] Silicium (DE-588)4077445-4 gnd Nitride (DE-588)4171929-3 gnd Halbleiterphysik (DE-588)4113829-6 gnd Siliciumcarbid (DE-588)4055009-6 gnd Kohlenstoff (DE-588)4164538-8 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4171929-3 (DE-588)4113829-6 (DE-588)4055009-6 (DE-588)4164538-8 (DE-588)4150649-2 (DE-588)1071861417 |
| title | Special issue on III-V nitrides and silicon carbide [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ] |
| title_auth | Special issue on III-V nitrides and silicon carbide [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ] |
| title_exact_search | Special issue on III-V nitrides and silicon carbide [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ] |
| title_exact_search_txtP | Special issue on III-V nitrides and silicon carbide [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ] |
| title_full | Special issue on III-V nitrides and silicon carbide [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ] |
| title_fullStr | Special issue on III-V nitrides and silicon carbide [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ] |
| title_full_unstemmed | Special issue on III-V nitrides and silicon carbide [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ] |
| title_short | Special issue on III-V nitrides and silicon carbide |
| title_sort | special issue on iii v nitrides and silicon carbide held at the university of denver in denver colorado 21 23 june 2000 |
| title_sub | [ held at the University of Denver in Denver, Colorado, 21 - 23 June 2000 ] |
| topic | Silicium (DE-588)4077445-4 gnd Nitride (DE-588)4171929-3 gnd Halbleiterphysik (DE-588)4113829-6 gnd Siliciumcarbid (DE-588)4055009-6 gnd Kohlenstoff (DE-588)4164538-8 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Silicium Nitride Halbleiterphysik Siliciumcarbid Kohlenstoff Drei-Fünf-Halbleiter Konferenzschrift |
| work_keys_str_mv | AT electronicmaterialsconferencedenvercolo specialissueoniiivnitridesandsiliconcarbideheldattheuniversityofdenverindenvercolorado2123june2000 |