Verfügbarkeit: Special issue on high speed circuits

Special issue on high speed circuits: 1999 GaAs IC Symposium and 1999 Bipolar-BICMOS Circuits and Technology Meeting ( BCTM )

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Bibliographische Detailangaben
Format:	Tagungsbericht Buch
Sprache:	English
Veröffentlicht:	New York, NY IEEE Corp. Office 2000
Schlagworte:	CAD Halbleiterphysik Bipolarschaltung Modellierung CMOS-Schaltung Halbleiterbauelement Galliumarsenid Konferenzschrift
Beschreibung:	Literaturangaben. - In: IEEE journal of solid-state circuits ; 35 (2000),9
Beschreibung:	S. 1258 - 1388 Ill., graph. Darst.

Internformat

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Datensatz im Suchindex

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spelling	Special issue on high speed circuits 1999 GaAs IC Symposium and 1999 Bipolar-BICMOS Circuits and Technology Meeting ( BCTM ) New York, NY IEEE Corp. Office 2000 S. 1258 - 1388 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben. - In: IEEE journal of solid-state circuits ; 35 (2000),9 CAD (DE-588)4069794-0 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Bipolarschaltung (DE-588)4145667-1 gnd rswk-swf Modellierung (DE-588)4170297-9 gnd rswk-swf CMOS-Schaltung (DE-588)4148111-2 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Galliumarsenid (DE-588)4019155-2 s DE-604 CAD (DE-588)4069794-0 s Halbleiterbauelement (DE-588)4113826-0 s Halbleiterphysik (DE-588)4113829-6 s Bipolarschaltung (DE-588)4145667-1 s CMOS-Schaltung (DE-588)4148111-2 s Modellierung (DE-588)4170297-9 s GaAs IC Symposium 21 1999 Monterey, Calif. Sonstige (DE-588)5512776-9 oth Bipolar BiCMOS Circuits and Technology Meeting 1999 Minneapolis, Minn. Sonstige (DE-588)10013582-1 oth
spellingShingle	Special issue on high speed circuits 1999 GaAs IC Symposium and 1999 Bipolar-BICMOS Circuits and Technology Meeting ( BCTM ) CAD (DE-588)4069794-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd Bipolarschaltung (DE-588)4145667-1 gnd Modellierung (DE-588)4170297-9 gnd CMOS-Schaltung (DE-588)4148111-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Galliumarsenid (DE-588)4019155-2 gnd
subject_GND	(DE-588)4069794-0 (DE-588)4113829-6 (DE-588)4145667-1 (DE-588)4170297-9 (DE-588)4148111-2 (DE-588)4113826-0 (DE-588)4019155-2 (DE-588)1071861417
title	Special issue on high speed circuits 1999 GaAs IC Symposium and 1999 Bipolar-BICMOS Circuits and Technology Meeting ( BCTM )
title_auth	Special issue on high speed circuits 1999 GaAs IC Symposium and 1999 Bipolar-BICMOS Circuits and Technology Meeting ( BCTM )
title_exact_search	Special issue on high speed circuits 1999 GaAs IC Symposium and 1999 Bipolar-BICMOS Circuits and Technology Meeting ( BCTM )
title_exact_search_txtP	Special issue on high speed circuits 1999 GaAs IC Symposium and 1999 Bipolar-BICMOS Circuits and Technology Meeting ( BCTM )
title_full	Special issue on high speed circuits 1999 GaAs IC Symposium and 1999 Bipolar-BICMOS Circuits and Technology Meeting ( BCTM )
title_fullStr	Special issue on high speed circuits 1999 GaAs IC Symposium and 1999 Bipolar-BICMOS Circuits and Technology Meeting ( BCTM )
title_full_unstemmed	Special issue on high speed circuits 1999 GaAs IC Symposium and 1999 Bipolar-BICMOS Circuits and Technology Meeting ( BCTM )
title_short	Special issue on high speed circuits
title_sort	special issue on high speed circuits 1999 gaas ic symposium and 1999 bipolar bicmos circuits and technology meeting bctm
title_sub	1999 GaAs IC Symposium and 1999 Bipolar-BICMOS Circuits and Technology Meeting ( BCTM )
topic	CAD (DE-588)4069794-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd Bipolarschaltung (DE-588)4145667-1 gnd Modellierung (DE-588)4170297-9 gnd CMOS-Schaltung (DE-588)4148111-2 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Galliumarsenid (DE-588)4019155-2 gnd
topic_facet	CAD Halbleiterphysik Bipolarschaltung Modellierung CMOS-Schaltung Halbleiterbauelement Galliumarsenid Konferenzschrift
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